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   Plasma Physics (including Thermonuclear Fusion).
      Plasma applications.
         Plasma technology.
            Etching.
Atomistic simulations of graphite etching at realistic time scales
23rd International Symposium on Plasma Chemistry (ISPC 23) , Montréal, Canada, July 30th – August 4th, 2017
Damien Aussems, Kristof Bal, Thomas Morgan, Richard van de Sanden, Erik Neyts
Int. Symposium on Plasma Chemistry (ISPC), Vol: 2017, No: 23 , published: 01 August 2017
Microbial Inactivation of Raw Produce by Cold Atmospheric Pressure Plasma (CAP) sources: Correlation of Bacterial Disinfection to Etching and Surface Modifications
23rd International Symposium on Plasma Chemistry (ISPC 23) , Montréal, Canada, July 30th – August 4th, 2017
 Pingshan Luan, Luis Bastarrachea, Rohan Tikekar, Peter Bruggeman, Gottlieb Oehrlein
Int. Symposium on Plasma Chemistry (ISPC), Vol: 2017, No: 23 , published: 01 August 2017
Influence of the radial plasma non-uniformity on the etch process
Proc. of the XXXIII International Conference on Phenomena in Ionized Gases (ICPIG 2017), Estoril, Portugal, July 9-14, 2017
Violeta Georgieva, Stefan Tinck and Annemie Bogaerts
Int. Conf. on Phenomena in Ionized Gas (ICPIG) , Vol: 2017, No: , published: 09 July 2017
Atmospheric pressure etching of silicon surface with fluorine - containing cold plasma jets 
Seventeen International Conference on Plasma Physics and Applications (17th CPPA) and Workshop on Plasma Coatings for Medical Applications, 15 – 20 June 2017, Bucharest, Romania
M.D. Ionita , E.R. Ionita , G. Dinescu
Int. Conf. Plasma Phys. Applications (CPPA), Vol: 2017, No: , published: 15 June 2017
Deposition of plasma - polymerized hexamethyldisilazane films onto polypropylene track- etched membranes
Seventeen International Conference on Plasma Physics and Applications (17th CPPA) and Workshop on Plasma Coatings for Medical Applications, 15 – 20 June 2017, Bucharest, Romania
L.I. Kravets , S.N. Dmitriev, V. Satulu, B. Mitu, G. Dinescu
Int. Conf. Plasma Phys. Applications (CPPA), Vol: 2017, No: , published: 15 June 2017
Layer-by-layer etching of LaAlSiO x
Mitsuhiro Omura, Kazuhito Furumoto, Kazuhisa Matsuda, Toshiyuki Sasaki, Itsuko Sakai and Hisataka Hayashi
Plasma Sources Sci. and Technol., Vol: 26, No: 6 , published: 01 June 2017
On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N2/Ar Inductively Coupled Plasma
Jongchan Lee, Alexander Efremov, Kwangsoo Kim, Kwang-Ho Kwon
Plasma Chem. Plasma Process., Vol: 37, No: 2 , published: 01 March 2017
The characteristics of high etch rate ion beam etcher with magnetized inductively coupled plasma source
J W Kim, H W Cheong, Y T Hong and K W Whang
Plasma Sources Sci. and Technol., Vol: 26, No: 3 , published: 01 March 2017
Electrode-selective deposition/etching processes using an SiF4/H2/Ar plasma chemistry excited by sawtooth tailored voltage waveforms
J K Wang and E V Johnson
Plasma Sources Sci. and Technol., Vol: 26, No: 1 , published: 01 February 2017
Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl2 plasmas and potential applications in plasma etching
Peng Tian and Mark J Kushner
Plasma Sources Sci. and Technol., Vol: 26, No: 2 , published: 01 February 2017
Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl2 + Ar and HBr + Ar Inductively Coupled Plasmas
Junmyung Lee Alexander Efremov Byung Jun Lee Kwang-Ho Kwon
Plasma Chem. Plasma Process., Vol: 36, No: 6 , published: 01 November 2016
Physical investigation of a quad confinement plasma source
58th Annual Meeting of the APS Division of Plasma Physics, October 31–November 4, 2016, San Jose, US
Aaron Knoll , Andrea Lucca Fabris , Christopher Young , Mark Cappelli
Bull. Am. Phys. Soc., Vol: 61, No: 18 , published: 31 October 2016
Plasma Etching of superconducting radio frequency cavity by Ar/Cl2 capacitively coupled Plasma
69th Annual Gaseous Electronics Conference, Oct. 10–14, 2016, Bochum, Germany
Janardan Upadhyay, Svetozar Popovic, Anne-Marie Valente-Feliciano, Larry Phillips, Lepsha Vuskovic
Bull. Am. Phys. Soc., Vol: 61, No: 9 , published: 10 October 2016
Computer modelling of cryogenic etching in SF6/O2/SiF4 and CxFy inductively coupled plasmas
69th Annual Gaseous Electronics Conference, Oct. 10–14, 2016, Bochum, Germany
Quan-Zhi Zhang, Annemie Bogaerts
Bull. Am. Phys. Soc., Vol: 61, No: 9 , published: 10 October 2016
Temporal evolution of as-developed line and space photoresist profiles during etch
69th Annual Gaseous Electronics Conference, Oct. 10–14, 2016, Bochum, Germany
Barton Lane, Peter Ventzek, Alok Ranjan, Vinayak Rastogi, Jun Yoshikawa
Bull. Am. Phys. Soc., Vol: 61, No: 9 , published: 10 October 2016
Origin of plasma-induced surface roughening and ripple formation during plasma etching
69th Annual Gaseous Electronics Conference, Oct. 10–14, 2016, Bochum, Germany
Kouichi Ono, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi
Bull. Am. Phys. Soc., Vol: 61, No: 9 , published: 10 October 2016
Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications
Banat Gul, Iftikhar Ahmad, Gulfam Zia and Aman-ur-Rehman
Phys. Plasmas, Vol: 23, No: 9 , published: 01 October 2016
Study of the VHF Plasma Etching of Micro/Nano Patterned PMMA Coated on Ultra-Thin Flexible Glass Substrates
Aparajita Mandal, Arindam Kole, Sean M. Garner and Partha Chaudhuri
Plasma Processes and Polymers, Vol: 13, No: 10 , published: 01 October 2016
Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications
Banat Gul, Aman-ur Rehman
Plasma Chem. Plasma Process., Vol: 36, No: 5 , published: 01 September 2016
Designing Hydrophobicity of the PLA Polymer Blend Surfaces by ICP Etching
Domagoj Vrsaljko, Ivana Grčić, Cédric Guyon, Guillaume Schelcher and Michael Tatoulian
Plasma Processes and Polymers, Vol: 13, No: 9 , published: 01 September 2016
Selective Plasma Etching of Polyphenolic Composite in O2/Ar Plasma for Improvement of Material Tracking Properties
Harinarayanan Puliyalil, Gregor Filipič and Uroš Cvelbar
Plasma Processes and Polymers, Vol: 13, No: 7 , published: 01 July 2016
Investigation of inductively coupled SF6 plasma etching of Si and SiO2 throught a global model coupled with langmuir adsorption kinetics
2016 IEEE International Conference on Plasma Science (ICOPS), Banff, Canada June 19–23, 2016
David A. Toneli ; Rodrigo S. Pessoa ; Marisa Roberto
IEEE Int. Conf. Plasma Sci. (ICOPS) , Vol: 2016, No: , published: 19 June 2016
Realistic surface reaction modeling for 3D feature profile simulation of fluorocarbon-based plasma etch process
2016 IEEE International Conference on Plasma Science (ICOPS), Banff, Canada June 19–23, 2016
Yeong-Geun Yook ; Hae Sung You ; Yeon Ho Im ; Won-Seok Chang
IEEE Int. Conf. Plasma Sci. (ICOPS) , Vol: 2016, No: , published: 19 June 2016
Green plasma route for nitrogen functionalized vertical graphene synthesis using sustainable resources
2016 IEEE International Conference on Plasma Science (ICOPS), Banff, Canada June 19–23, 2016
Woo Yan Lin ; Bo Ouyang ; Sabpreet Bhatti ; Rajdeep S. Rawat ; Zhang Zheng
IEEE Int. Conf. Plasma Sci. (ICOPS) , Vol: 2016, No: , published: 19 June 2016
Optimizing remote plasma sources for selective etching
2016 IEEE International Conference on Plasma Science (ICOPS), Banff, Canada June 19–23, 2016
Shuo Huang ; Mark J. Kushner ; Vladimir Volynets ; Sangheon Lee ; In-Cheol Song ; Siqing Lu ; James R. Hamilton ; Jonathan Tennyson
IEEE Int. Conf. Plasma Sci. (ICOPS) , Vol: 2016, No: , published: 19 June 2016
Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma
Akio Ui, Hisataka Hayashi, Itsuko Sakai, Takeshi Kaminatsui, Tokuhisa Ohiwa, Katsumi Yamamoto and Keisuke Kikutani
J. Vac. Sci. Technol., A, Vol: 34, No: 3 , published: 01 May 2016
Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric
Chen Li, Rahul Gupta, Venkateswara Pallem and Gottlieb S. Oehrlein
J. Vac. Sci. Technol., A, Vol: 34, No: 3 , published: 01 May 2016
Effects of Ar and O2 Plasma Etching on Parylene C: Topography versus Surface Chemistry and the Impact on Cell Viability
Dimitrios Kontziampasis, Tatiana Trantidou, Anna Regoutz, Eleanor J. Humphrey, Daniela Carta, Cesare M. Terracciano and Themistoklis Prodromakis
Plasma Processes and Polymers, Vol: 13, No: 3 , published: 01 March 2016
Oxygen and nitrogen plasma etching of three-dimensional hydroxyapatite/chitosan scaffolds fabricated by additive manufacturing
Sung-Woon Myung and Byung-Hoon Kim
Jpn. J. Appl. Phys., Part 1, Vol: 55, No: 1S , published: 01 January 2016
Enhancement of Particle Track Etch Rate in CR-39 by UV Exposure
57th Annual Meeting of the APS Division of Plasma Physics, November 16-20, 2015, Savannah, US
Micah Wiesner , Rubab Ume , James McLean , Craig Sangster , Sean Regan
Bull. Am. Phys. Soc., Vol: 60, No: 19 , published: 16 November 2015
The Effects of Using a Commercial Grade Plasma Etching Chamber to Etch Anodized Niobium Surfaces
57th Annual Meeting of the APS Division of Plasma Physics, November 16-20, 2015, Savannah, US
Christiana Epperson , Dereth Drake , Kalina Winska
Bull. Am. Phys. Soc., Vol: 60, No: 19 , published: 16 November 2015
Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas
F. Leroy, L. Zhang, T. Tillocher, K. Yatsuda, K. Maekawa, E. Nishimura, P. Lefaucheux, J.-F. de Marneffe, M. R. Baklanov and R. Dussart
J. Phys. D: Appl. Phys., Vol: 48, No: 43 , published: 04 November 2015
Pressure-Dependent Etching Mechanism and Induced Dielectric Properties Variation of BZN Thin Films in SF6/Ar Plasma
Liping Dai , Wenping Song , Shuya Wang , Zhiqin Zhong , Guojun Zhang
Plasma Chem. Plasma Process., Vol: 35, No: 6 , published: 01 November 2015
A Model-Based Comparative Study of HCl and HBr Plasma Chemistries for Dry Etching Purposes
Alexander Efremov, Joon Hyub Kim, Kwang-Ho Kwon
Plasma Chem. Plasma Process., Vol: 35, No: 6 , published: 01 November 2015
Etch characteristics of magnetic tunnel junction materials using substrate heating in the pulse-biased inductively coupled plasma
Min Hwan Jeon, Kyung Chae Yang, Sehan Lee and Geun Young Yeom
J. Vac. Sci. Technol., A, Vol: 33, No: 6 , published: 01 November 2015
Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model
Nobuyuki Kuboi, Tetsuya Tatsumi, Takashi Kinoshita, Takushi Shigetoshi, Masanaga Fukasawa, Jun Komachi and Hisahiro Ansai
J. Vac. Sci. Technol., A, Vol: 33, No: 6 , published: 01 November 2015
A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model
Banat Gul and Aman-ur-Rehman
Phys. Plasmas, Vol: 22, No: 10 , published: 01 October 2015
The effects of the Fermi level on ion induced electron emission from chemically and sputter cleaned semiconductors
David Urrabazo and Lawrence J. Overzet
J. Phys. D: Appl. Phys., Vol: 48, No: 34 , published: 04 September 2015
Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface
Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Tatsuo Shirahama, Shodai Hirai, Takashi Mukai
Vacuum, Vol: 119, No: , published: 01 September 2015
Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS
Sophie Bouchoule, Romain Chanson, Arnaud Pageau, Edmond Cambril, Stephane Guilet, Ahmed Rhallabi and Christophe Cardinaud
J. Vac. Sci. Technol., A, Vol: 33, No: 5 , published: 01 September 2015
Properties of black silicon obtained at room-temperature by different plasma modes
Maria Gaudig, Jens Hirsch, Thomas Schneider, Alexander N. Sprafke, Johannes Ziegler, Norbert Bernhard and Ralf B. Wehrspohn
J. Vac. Sci. Technol., A, Vol: 33, No: 5 , published: 01 September 2015
Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma
Valentyn Ishchuk, Deirdre L. Olynick, Zuwei Liu and Ivo W. Rangelow
J. Appl. Phys. , Vol: 118, No: 5 , published: 07 August 2015
Key plasma parameters for nanometric precision etching of Si films in chlorine discharges
P. Brichon, E. Despiau-Pujo, O. Mourey and O. Joubert
J. Appl. Phys. , Vol: 118, No: 5 , published: 07 August 2015
Particle formation and its control in dual frequency plasma etching reactors
Munsu Kim, Hee-Woon Cheong and Ki-Woong Whang
J. Vac. Sci. Technol., A, Vol: 33, No: 4 , published: 01 July 2015
Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma
Xianwen Liu, Changzheng Sun, Bing Xiong, Lang Niu, Zhibiao Hao, Yanjun Han, Yi Luo
Vacuum, Vol: 116, No: , published: 01 June 2015
Monitoring of inner wall condition in mass-production plasma etching process using a load impedance monitoring system
Yuji Kasashima, Hiroyuki Kurita, Naoya Kimura, Akira Ando and Fumihiko Uesugi
Jpn. J. Appl. Phys., Vol: 54, No: 6 , published: 01 June 2015
Effects of plasma treatments on the adhesion between polyester fabrics and silicone rubber coating
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Berrak Sari Y., Kutlu B., Mizrak B.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Optimization of low-pressure plasma reactor for high-speed surface treatment of polyimide substrate
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Jae-Ok Lee, Woo Seok Kang, Min Hur, Young-Hoon Song
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Modification of the surface layer of metal materials under the combined influence of high intensity pulsed ion beam and magnetron sputtering
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Remnev G.E., Lebedynskiy A.M., Legostaev V.N., Pavlov S.K., Petrov A.V., Smolyanskiy E.V., Stepanov A.V.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Obtaining useful properties of different materials by using magnetron sputtering
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Senturk K., Sen T., Coruhlu T., Varturk I., Korachi M., Aslan N.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
The preparation of microporous PVDF membranes with dithiphosphates and modification of surface properties by Helicon plasma
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Koseoglu T.S., Ilgaz F., Calis O., Kir E., Aydin A., Gulec A.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Solid state battery manufacturing with thermionic vacuum ARC and RF sputtering
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Pat S., Ozen S., Senay V., Korkmaz S., Pat Z.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Numerical study on heating gas in atmospheric pressure helium discharge
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Eliseev S.I., Kudryavtsev A.A., Stepanova O.M.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Simulation of ion redistribution in a vacuum chamber during magnetron sputtering of coatings
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Saifullin E.R.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Plasma polymerized electrospun PEDOT-S nanofibers obtained by in-situ radio frequency plasma treatment
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Dulgerbaki C., Kiristi M., Oksuz A.U., Bozduman F., Oksuz L., Ahmad S.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Synthesis of few-layer graphene films by controllable Cr4rFr8r plasma etching SiC
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Jin C., Huang T., Zhuge L., Wu X.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Modeling of inductively coupled plasma source with argon/oxygen gas mixture for etching
The 42nd IEEE International Conference on Plasma Science (ICOPS), May 24 – 28, Antalya, Turkey
Balouza S.M., Abou-Gabal H.H., Abdelrazek A.M.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2015, No: , published: 24 May 2015
Etching mechanisms of graphene nanoribbons in downstream H2 plasmas: insights from molecular dynamics simulations
A. Davydova, E. Despiau-Pujo, G. Cunge and D. B. Graves
J. Phys. D: Appl. Phys., Vol: 48, No: 19 , published: 20 May 2015
Spatial phase-resolved optical emission spectroscopy for understanding plasma etching uniformity
V. Milosavljević and P. J. Cullen
Europhys. Lett. , Vol: 110, No: 4 , published: 15 May 2015
Interaction of F atoms with SiOCH ultra low-k films. Part II: etching
T. V. Rakhimova, D. V. Lopaev, Yu A. Mankelevich, K. A. Kurchikov, S. M. Zyryanov, A. P. Palov, O. V. Proshina, K. I. Maslakov, M. R. Baklanov
J. Phys. D: Appl. Phys., Vol: 48, No: 17 , published: 08 May 2015
Experiment and Results on Plasma Etching of SRF Cavities
Proc. 6th International Particle Accelerator Conference (IPAC 2015) : Richmond, Virginia, USA, May 3-8, 2015
J. Upadhyay, J.J. Peshl, S. Popović, L. Vušković,H.L. Phillips, A-M. Valente-Feliciano
Proc. International Particle Accelerator Conference (IPAC), Vol: 2015, No: , published: 03 May 2015
Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles
Yiting Zhang, Mark J. Kushner, Saravanapriyan Sriraman, Alexei Marakhtanov, John Holland and Alex Paterson
J. Vac. Sci. Technol., A, Vol: 33, No: 3 , published: 01 May 2015
In-situ etch rate study of HfLaO in Cl/BCl plasmas using the quartz crystal microbalance
Nathan Marchack, Taeseung Kim, Hans-Olof Blom and Jane P. Chang
J. Vac. Sci. Technol., A, Vol: 33, No: 3 , published: 01 May 2015
Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study
Stefan Tinck, Thomas Tillocher, Rémi Dussart, Annemie Bogaerts
J. Phys. D: Appl. Phys., Vol: 48, No: 15 , published: 22 April 2015
Aerosol deposition-based micropatterning of barium titanate via sulphur hexafluoride inductively coupled plasma etching
C. Wang, H.K. Sung, N.Y. Kim
Vacuum, Vol: 114, No: , published: 01 April 2015
Silicon nitride etching performance of CH2F2 plasma diluted with argon or krypton
Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori
Jpn. J. Appl. Phys., Vol: 54, No: 4 , published: 01 April 2015
Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching
Naruki Ninomiya, Takahiro Mori, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka and Atsushi Ando
Jpn. J. Appl. Phys., Vol: 54, No: 4 , published: 01 April 2015
Plasma-Etching for Controlled Modification of Structural and Mechanical Properties of Electrospun PET Scaffolds
Houman Savoji, Sophie Lerouge, Abdellah Ajji and Michael R. Wertheimer
Plasma Processes and Polymers, Vol: 12, No: 4 , published: 01 April 2015
Study on contact distortion during high aspect ratio contact SiO2 etching
Jong Kyu Kim, Sung Ho Lee, Sung Il Cho, Geun Young Yeom
J. Vac. Sci. Technol., A, Vol: 33, No: 2 , published: 01 March 2015
Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching
Kevin Anglin, William D. Goodhue, Reuel B. Swint, Jeanne Porter
J. Vac. Sci. Technol., A, Vol: 33, No: 2 , published: 01 March 2015
Formation of PtSi Schottky barrier MOSFETs using plasma etching
Young Min Woo, Wan Sik Hwang, Won Jong Yoo
J. Vac. Sci. Technol., A, Vol: 33, No: 2 , published: 01 March 2015
Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes
Kohei Mizotani, Michiro Isobe, Satoshi Hamaguchi
J. Vac. Sci. Technol., A, Vol: 33, No: 2 , published: 01 March 2015
Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching
Banat Gul, Stefan Tinck, Peter De Schepper, Aman-ur- Rehman, Annemie Bogaerts
J. Phys. D: Appl. Phys., Vol: 48, No: 2 , published: 21 January 2015
Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma
Adrian Adalberto Garay, Su Min Hwang, Chee Won Chung
Vacuum, Vol: 111, No: , published: 01 January 2015
A study on the etching characteristics of magnetic tunneling junction materials using DC pulse-biased inductively coupled plasma
Kyung Chae Yang, Min Hwan Jeon, Geun Young Yeom
, Vol: 54, No: 1 , published: 01 January 2015
Numerous flaked particles instantaneously generated by micro-arc discharge in mass-production plasma etching equipment
Yuji Kasashima, Taisei Motomura, Natsuko Nabeoka, Fumihiko Uesugi
, Vol: 54, No: 1 , published: 01 January 2015
Robust characteristics of semiconductor-substrate temperature measurement by autocorrelation-type frequency-domain low-coherence interferometry
Takayoshi Tsutsumi, Takayuki Ohta, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori, Masafumi Ito
Jpn. J. Appl. Phys., Part 1, Vol: 54, No: 1S , published: 01 January 2015
A study on the etching characteristics of magnetic tunneling junction materials using DC pulse-biased inductively coupled plasmas
Kyung Chae Yang, Min Hwan Jeon, Geun Young Yeom
Jpn. J. Appl. Phys., Part 1, Vol: 54, No: 1S , published: 01 January 2015
Numerous flaked particles instantaneously generated by micro-arc discharge in mass-production plasma etching equipment
Yuji Kasashima, Taisei Motomura, Natsuko Nabeoka, Fumihiko Uesugi
Jpn. J. Appl. Phys., Part 1, Vol: 54, No: 1S , published: 01 January 2015
Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma
Hoe Jun Kim, Min Hwan Jeon, Anurag Kumar Mishra, In Jun Kim, Tae Ho Sin, Geun Young Yeom
Jpn. J. Appl. Phys., Part 1, Vol: 54, No: 1S , published: 01 January 2015
Numerical Simulation of Atomic Layer Oxidation of Silicon by Oxygen Gas Cluster Beams
Kohei MIZOTANI, Michiro ISOBE, Kazuhiro KARAHASHI and Satoshi HAMAGUCHI
J. Plasma and Fusion Res.: Regular Issue, Vol: 2015, No: 10 , published: 01 January 2015
Si etching with reactive neutral beams of very low energy
Yasuhiro Hara, Manabu Hamagaki, Takaya Mise, Naotaka Iwata, Tamio Hara
J. Appl. Phys. , Vol: 116, No: 22 , published: 14 December 2014
Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products
Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
J. Appl. Phys. , Vol: 116, No: 22 , published: 14 December 2014
SF6 and C4F8 global kinetic models coupled to sheath models
Yehya Haidar, Amand Pateau, Ahmed Rhallabi, Marie Claude Fernandez, Arezki Mokrani, Fadia Taher, Fabrice Roqueta, Mohamed Boufnichel
Plasma Sources Sci. and Technol., Vol: 23, No: 6 , published: 01 December 2014
The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching
Lin J., Huang S., Su Y., Huang K.
IEEE Trans. Plasma Sci. Pt 1, Vol: 42, No: 12 , published: 01 December 2014
Hydrophilic DLC Surface Induced by Nanostructures Formed by RF O2 Plasma Etching With Metal Micromasks
Harigai T., Iwasa K., Furuta H., Hatta A.
IEEE Trans. Plasma Sci. Pt 1, Vol: 42, No: 12 , published: 01 December 2014
Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization
Katsunori Makihara, Mitsuhisa Ikeda, Tatsuya Okada, Seiichi Miyazaki
Jpn. J. Appl. Phys., Part 1, Vol: 53, No: 11S , published: 01 November 2014
Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques
Sung Woon Myung, Yeong Mu Ko, Byung Hoon Kim
Jpn. J. Appl. Phys., Part 1, Vol: 53, No: 11S , published: 01 November 2014
Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas
Nomin Lim, Alexander Efremov, Geun Young Yeom, Bok-Gil Choi, Kwang-Ho Kwon
Jpn. J. Appl. Phys., Vol: 53, No: 11 , published: 01 November 2014
Electrochemical characteristics of plasma-etched black silicon as anodes for Li-ion batteries
Gibaek Lee, Stefan L. Schweizer, Ralf B. Wehrspohn
J. Vac. Sci. Technol., A, Vol: 32, No: 6 , published: 01 November 2014
Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate
Kosa Hirota, Naoshi Itabashi, Junichi Tanaka
J. Vac. Sci. Technol., A, Vol: 32, No: 6 , published: 01 November 2014
Transport of a helicon plasma by a convergent magnetic field for high speed and compact plasma etching
Kazunori Takahashi, Taisei Motomura, Akira Ando, Yuji Kasashima, Kazuya Kikunaga, Fumihiko Uesugi, Shiro Hara
J. Phys. D: Appl. Phys., Vol: 47, No: 42 , published: 22 October 2014
Numerical Simulation of Bosch Processing for Deep Silicon Plasma Etching
13th High-Tech Plasma Processes Conference (HTPP-2014), 22–27 June 2014, Toulouse, France
P. Moroz and D. J. Moroz
J. Phys.: Conf. Ser., Vol: 2014, No: 550 , published: 16 October 2014
Скорость травления кремния локализованным газовым разрядом
Абрамов А.В., Панкратова Е.А., Суровцев И.С.
Ж. техн. физ., Vol: 84, No: 10 , published: 01 October 2014
Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing
I. Hotovy, S. Hascik, M. Gregor, V. Rehacek, M. Predanocy, A. Plecenik
Vacuum, Vol: 107, No: , published: 01 September 2014
Etching and Post-Treatment Surface Stability of Track-Etched Polycarbonate Membranes by Plasma Processing Using Various Related Oxidizing Plasma Systems
Brendan D. Tompkins, Jordan M. Dennison, Ellen R. Fisher
Plasma Processes and Polymers, Vol: 11, No: 9 , published: 01 September 2014
Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase during hollow cathode reactive ion etching plasma
L.L. Tezani, R.S. Pessoa, H.S. Maciel, G. Petraconi
Vacuum, Vol: 106, No: , published: 01 August 2014
Threshold and criterion for ion track etching in SiO2 layers grown on Si
L.A. Vlasukova, F.F. Komarov, V.N. Yuvchenko, W. Wesch, E. Wendler, A.Yu. Didyk, V.A. Skuratov, S.B. Kislitsin
Vacuum, Vol: 105, No: , published: 01 July 2014
Tunable periodic graphene antidot lattices fabricated by e-beam lithography and oxygen ion etching
L.Z. Liu, S.B. Tian, Y.Z. Long, W.X. Li, H.F. Yang, J.J. Li, C.Z. Gu
Vacuum, Vol: 105, No: , published: 01 July 2014
Anisotropic Ta2O5 waveguide etching using inductively coupled plasma etching
Muhammad Firdaus A. Muttalib, Ruiqi Y. Chen, Stuart J. Pearce, Martin D. B. Charlton
J. Vac. Sci. Technol., A, Vol: 32, No: 4 , published: 01 July 2014
Self-Aligned Selective Emitter Formation Using Commercial Screen-Printed Contacts as a Plasma Etch Mask
Rahul Khandelwal, Horst Windgassen, Tobias Markus Pletzer and Heinrich Kurz
Plasma Processes and Polymers, Vol: 11, No: 6 , published: 01 June 2014
The Reinforcement Ability of Plasma-Etched Carbon Nanofibers on Mechanical Properties of C-Epoxy Composites
Killi Krushnamurty, Pappireddy Manoj Kumar Reddy, Ivaturi Srikanth, Pinnelli S. R. Prasad, Partha Ghosal and Challapalli Subrahmanyam
Plasma Processes and Polymers, Vol: 11, No: 6 , published: 01 June 2014
Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas
Weiye Zhu, Shyam Sridhar, Lei Liu, Eduardo Hernandez, Vincent M. Donnelly, Demetre J. Economou
J. Appl. Phys. , Vol: 115, No: 20 , published: 28 May 2014
Lithium wetting of stainless steel studied via scanning auger microscopy
41st IEEE International Conference on Plasma Science (ICOPS) and the 20th International Conference on High Power Particle Beams (BEAMS), 25 - 29 May 2014, U.S.A, Washington, D.C.
Skinner C.H., Capece A.M., Koel B.E., Roszell J.P.
IEEE NPSS (Nuclear and Plasma Sciences Society) Plasma Science and Applications (PSAC), Vol: 2014, No: , published: 25 May 2014
Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases
Dipendra Singh Rawal, Henika Arora, Bhupender Kumar Sehgal, Rangarajan Muralidharan
J. Vac. Sci. Technol., A, Vol: 32, No: 3 , published: 01 May 2014
Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2
Chalermwat Wongwanitwattana, Vishal A. Shah, Maksym Myronov, Evan H. C. Parker, Terry Whall, David R. Leadley
J. Vac. Sci. Technol., A, Vol: 32, No: 3 , published: 01 May 2014
Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching
Yuan-Ming Chiu, Chung-Hua Chiang, Chieh-Tsan Hung, Meng-Hua Hu, Jong-Shinn Wu, Feng-Nan Hwang
Plasma Processes and Polymers, Vol: 11, No: 4 , published: 01 April 2014
Formation of SiO2 surface textures via CHF3/Ar plasma etching process of poly methyl methacrylate self-formed masks
Maryam Alsadat Rad, Kamarulazizi Ibrahim, Khairudin Mohamed
Vacuum, Vol: 101, No: , published: 01 March 2014
Gas discharge devices generating the directed fluxes of off-electrode plasma
N.L. Kazanskiy, V.A. Kolpakov, V.V. Podlipnov
Vacuum, Vol: 101, No: , published: 01 March 2014
Etch characteristics of MgO thin films in Cl2/Ar, CH3OH/Ar and CH4/Ar plasmas
Il Hoon Lee, Tea Young Lee, Su Min Hwang, Chee Won
Vacuum, Vol: 101, No: , published: 01 March 2014
On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure
Jinyoung Son, Alexander Efremov, Inwoo Chun, Geun Young Yeom, Kwang-Ho Kwon
Plasma Chem. Plasma Process., Vol: 34, No: 2 , published: 01 March 2014
Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
Dominik Metzler, Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, Gottlieb S. Oehrlein
J. Vac. Sci. Technol., A, Vol: 32, No: 2 , published: 01 March 2014
Crystallization phase transition in the precursors of CIGS films by Ar-ion plasma etching process
Wei-Ting Lin, Sheng-Hui Chen, Shih-Hao Chan, Sung-Cheng Hu, Wan-Xuan Peng, Yung-Tien Lu
Vacuum, Vol: 99, No: , published: 01 January 2014
Superhydrophobic polytetrafluoroethylene surfaces with leaf-like micro-protrusions through Ar + O2 plasma etching process
Harish C. Barshilia, Nitant Gupta
Vacuum, Vol: 99, No: , published: 01 January 2014
Effect of reactant transport on the trench profile evolution for silicon etching in chlorine plasmas
Sai-Qian Zhang, Zhong-Ling Dai, Yuan-Hong Song, You-Nian Wang
Vacuum, Vol: 99, No: , published: 01 January 2014
Etching of Blood Proteins in the Early and Late Flowing Afterglow of Oxygen Plasma
Alenka Vesel, Metod Kolar, Nina Recek, Kinga Kutasi, Karin Stana-Kleinschek, Miran Mozetic
Plasma Processes and Polymers, Vol: 11, No: 1 , published: 01 January 2014
Surface Modification of Absorbable Magnesium Stents by Reactive Ion Etching
E. Galvin, M. M. Morshed, C. Cummins, S. Daniels, C. Lally, B. MacDonald
Plasma Chem. Plasma Process., Vol: 33, No: 6 , published: 01 December 2013
An experimental study of photoresist material etching by an atmospheric-pressure plasma jet with Ar/air mixed gas
Lijun Wang, Wenjun Ning, Mingzheng Fu, Chen Wu, Shenli Jia
J. Plasma Phys., Vol: 79, No: 5 , published: 01 October 2013
On the “Growth” of Nano-Structures on c-Silicon via Self-Masked Plasma Etching Processes
Rosa Di Mundo, Fabio Palumbo, Gianni Barucca, Gianfranco Sabato, Riccardo d'Agostino
Plasma Processes and Polymers, Vol: 10, No: 10 , published: 01 October 2013
Real-Time Endpoint Detection of Small Exposed Area SiO2 Films in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component Analysis
Haegyu Jang, Jaewook Nam, Chang-Koo Kim, Heeyeop Chae
Plasma Processes and Polymers, Vol: 10, No: 10 , published: 01 October 2013
Effect of H2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma
Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake
Plasma Chem. Plasma Process., Vol: 33, No: 4 , published: 01 August 2013
2-dimensional ion velocity distributions measured by laser-induced fluorescence above a radio-frequency biased silicon wafer
Nathaniel B. Moore, Walter Gekelman, Patrick Pribyl, Yiting Zhang, Mark J. Kushner
Phys. Plasmas, Vol: 20, No: 8 , published: 01 August 2013
Etch characteristics of HfO2 thin films by using CF4/Ar inductively coupled plasma
Pil-Seung Kang, Jong-Chang Woo, Young-Hee Joo, Chang-Il Kim
Vacuum, Vol: 93, No: , published: 01 July 2013
Plasma Etching of Silk Fibroin: Experiments and Models
Jayasri Narayanamoorthy, Konstantinos Tsioris, Fiorenzo G. Omenetto, Jeffrey Hopwood
Plasma Processes and Polymers, Vol: 10, No: 5 , published: 01 May 2013
Superhydrophobic Transparent Surface of Nanostructured Poly(Methyl Methacrylate) Enhanced by a Hydrolysis Reaction
E. K. Her, T.-J. Ko, B. Shin, H. Roh, W. Dai, W. K. Seong, H.-Y. Kim, K.-R. Lee, K. H. Oh, M.-W. Moon
Plasma Processes and Polymers, Vol: 10, No: 5 , published: 01 May 2013
Phase-resolved optical emission spectroscopy for an electron cyclotron resonance etcher
Vladimir Milosavljević, Niall MacGearailt, P. J. Cullen, Stephen Daniels, Miles M. Turner
J. Appl. Phys. , Vol: 113, No: 16 , published: 28 April 2013
Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O2/Cl2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios
Sungchil Kang, Alexander Efremov, Sun Jin Yun, Jinyoung Son, Kwang-Ho Kwon
Plasma Chem. Plasma Process., Vol: 33, No: 2 , published: 01 April 2013
Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: modeling and experimental investigation
K. Van Laer, S. Tinck, V. Samara, J. F. de Marneffe, A. Bogaerts
Plasma Sources Sci. and Technol., Vol: 22, No: 2 , published: 01 April 2013
Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution
Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez, Christophe Cardinaud
Plasma Processes and Polymers, Vol: 10, No: 3 , published: 01 March 2013
Chemical and Physical Sputtering of Polyethylene Terephthalate (PET)
Simon Große-Kreul, Carles Corbella, Achim von Keudell
Plasma Processes and Polymers, Vol: 10, No: 3 , published: 01 March 2013
Hexagonally Arranged Nanopore Film Fabricated via Selective Etching by 172-nm Vacuum Ultraviolet Light Irradiation
Motonori Komura, Kaori Kamata, Tomokazu Iyoda, Keiji Nagai
Fusion Science and Technology, Vol: 63, No: 2 , published: 01 March 2013
Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma
Shu-Xia Zhao, Fei Gao, You-Nian Wang, Annemie Bogaerts
Plasma Sources Sci. and Technol., Vol: 22, No: 1 , published: 01 February 2013
Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment
M. Brihoum, R. Ramos, K. Menguelti, G. Cunge, E. Pargon, O. Joubert
J. Appl. Phys. , Vol: 113, No: 1 , published: 07 January 2013
Plasma Etching of Poly(dimethylsiloxane): Roughness Formation, Mechanism, Control, and Application in the Fabrication of Microfluidic Structures
Maria-Elena Vlachopoulou, George Kokkoris, Christophe Cardinaud, Evangelos Gogolides, Angeliki Tserepi
Plasma Processes and Polymers, Vol: 10, No: 1 , published: 01 January 2013
Investigation of Surface Etching of Poly(Ether Ether Ketone) by Atmospheric-Pressure Plasmas
Fricke K., Reuter S., Schroder D., Schulz-von der Gathen V., Weltmann K., von Woedtke T.
IEEE Trans. Plasma Sci. Pt 1, Vol: 40, No: 11 , published: 01 November 2012
Automation of a Mass Flow Controller for Application in Time-Multiplex SF6+CH4 Plasma Etching of Silicon
L.L. Tezani, R.S. Pessoa, R.S. Moraes, H.S. Medeiros, C.A. Martins, H.S. Maciel, G. Petraconi Filho, M. Massi, A. S. da Silva Sobrinho
Contrib. Plasma Phys., Vol: 52, No: 9 , published: 11 October 2012
Nano-texturing of Transparent Polymers with Plasma Etching: Tailoring Topography for a Low Reflectivity
Rosa Di Mundo, Mariagrazia Troia, Fabio Palumbo, Massimo Trotta and Riccardo d'Agostino
Plasma Processes and Polymers, Vol: 9, No: 10 , published: 02 October 2012
Silicon Patterning Using Self-assembled PS-b-PAA Diblock Copolymer Masks for Black Silicon Fabrication via Plasma Etching
Xin Zhang, Andrei B. Sushkov, Christopher J. Metting, Sean Fackler, H. Dennis Drew and R. M. Briber
Plasma Processes and Polymers, Vol: 9, No: 10 , published: 02 October 2012
Silicon Patterning Using Self-assembled PS-b-PAA Diblock Copolymer Masks for Black Silicon Fabrication via Plasma Etching
Xin Zhang, Andrei B. Sushkov, Christopher J. Metting, Sean Fackler, H. Dennis Drew and R. M. Briber
Plasma Processes and Polymers, Vol: 9, No: 10 , published: 02 October 2012
Interaction of Argon, Hydrogen and Oxygen Plasma Early Afterglow with Polyvinyl Chloride (PVC) Materials
Zlatko Kregar, Marijan Bišćan, Slobodan Milošević, Miran Mozetič and Alenka Vesel
Plasma Processes and Polymers, Vol: 9, No: 10 , published: 02 October 2012
An investigation of the temporal evolution of plasma potential in a 60 MHz/2 MHz pulsed dual-frequency capacitively coupled discharge
Anurag Mishra, Min Hwan Jeon, Kyong Nam Kim and Geun Young Yeom
Plasma Sources Sci. and Technol., Vol: 21, No: 5 , published: 01 October 2012
Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching
A. Y. Polyakov, Dae-Woo Jeon, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, E. B. Yakimov, In-Hwan Lee
J. Appl. Phys. , Vol: 112, No: 7 , published: 01 October 2012
Etching and Deposition Mechanism of an Alcohol Plasma on Polycarbonate and Poly(Methyl Methacrylate): An Adhesion Promotion Mechanism for Plasma Deposited a:SiOxCyHz Coating
Colin J. Hall, Peter J. Murphy,  Hans J. Griesser
Plasma Processes and Polymers, Vol: 9, No: 9 , published: 11 September 2012
Cost Effective Deposition System for Nitrogen Incorporated Diamond-like Carbon Coatings
Sushil Kumar, Neeraj Dwivedi,  Manas Kumar Dalai
Plasma Processes and Polymers, Vol: 9, No: 9 , published: 11 September 2012
\hbox {BCl}_{3}/\hbox {Cl}_{2} -Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask
Rawal D.S., Malik H.K., Agarwal V.R., Kapoor A.K., Sehgal B.K., Muralidharan R.
IEEE Trans. Plasma Sci., Vol: 40, No: 9 , published: 07 September 2012
PTFE Surface Etching in the Post-discharge of a Scanning RF Plasma Torch: Evidence of Ejected Fluorinated Species
Thierry Dufour, Julie Hubert, Pascal Viville, Corinne Y. Duluard, Simon Desbief, Roberto Lazzaroni and François Reniers
Plasma Processes and Polymers, Vol: 9, No: 8 , published: 12 August 2012
Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching
D.S. Rawal, B.K. Sehgal, R. Muralidharan, H.K. Malik, Amitava Dasgupta
Vacuum, Vol: 86, No: 12 , published: 20 July 2012
Comparison of models for silicon etching in CF4 + O2 plasma
R. Knizikevičius
Vacuum, Vol: 86, No: 12 , published: 20 July 2012
Dry Etching of Lead-Free (K,Na)NbO3 Piezoelectric Films by Ar/C4F8 Plasma
Fumimasa Horikiri, Kenji Shibata, Kazufumi Suenaga, Kazutoshi Watanabe, Akira Nomoto, Tomoyoshi Mishima, Fumiya Kurokawa, Isaku Kanno
Jpn. J. Appl. Phys., Vol: 51, No: 7R , published: 01 July 2012
Generation of the simplest rotational wave packet in a diatomic molecule: Tracing a two-level superposition in the time domain
A. Przystawik, A. Kickermann, A. Al-Shemmary, S. Düsterer, A. M. Ellis, K. von Haeften, M. Harmand, S. Ramakrishna, H. Redlin, L. Schroedter, M. Schulz, T. Seideman, N. Stojanovic, J. Szekely, F. Tavella, S. Toleikis, and T. Laarmann
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 85, No: 5 , published: 07 May 2012
Global Model of Cl2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP
Chanson R., Rhallabi A., Fernandez M. C., Cardinaud C., Bouchoule S., Gatilova L., Talneau A.
IEEE Trans. Plasma Sci., Vol: 40, No: 4 , published: 25 April 2012
Studies on Optimal Gas Supply For a Maskless Etching System with Micro- Discharge Plasma Operated at Atmospheric Pressure
Toshiyuki Hamada, Takuya Arimura, Tatsuya Sakoda
Plasma Chem. Plasma Process., Vol: 32, No: 2 , published: 20 April 2012
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
Hanbyeol Jang, Alexander Efremov, Daehee Kim, Sungchil Kang, Sun Jin Yun, et al.
Plasma Chem. Plasma Process., Vol: 32, No: 2 , published: 20 April 2012
Plasma potential mapping of high power impulse magnetron sputtering discharges
Albert Rauch, Rueben J. Mendelsberg, Jason M. Sanders, André Anders
J. Appl. Phys. , Vol: 111, No: 8 , published: 15 April 2012
Advanced colloidal lithography for sub-100 nm lift-off structures
Nico Homonnay, Nadine Geyer, Bodo Fuhrmann, Hartmut S. Leipner
Vacuum, Vol: 86, No: 9 , published: 14 March 2012
Surface morphology and structural analysis of fluorocarbon nano-rings formation through EBL and SiO2 plasma etching
Maryam Alsadat Rad, Khairudin Mohamed, Kamarulazizi Ibrahim
Vacuum, Vol: 86, No: 9 , published: 14 March 2012
Dry etch properties of IZO thin films in a CF4/Ar adaptively coupled plasma system
Jong-Chang Woo, Chang-Il Kim
Vacuum, Vol: 86, No: 9 , published: 14 March 2012
Hierarchical, Plasma Nanotextured, Robust Superamphiphobic Polymeric Surfaces Structurally Stabilized Through a Wetting–drying Cycle
Arun Kumar Gnanappa, Dimitrios P. Papageorgiou, Evangelos Gogolides, Angeliki Tserepi, Athanasios G. Papathanasiou and Andreas G. Boudouvis
Plasma Processes and Polymers, Vol: 9, No: 3 , published: 02 March 2012
Track etch parameters and annealing kinetics assessment of protons of low energy in CR-39 detector
R.K. Jain, Ashok Kumar, B.K. Singh
Nucl. Instrum. Methods Phys. Res., Sect. B , Vol: 274, No: , published: 01 March 2012
Dual frequency capacitive plasmas in Fe and Ni sputter applications: correlation of discharge properties on thin film properties
S. Bienholz, E. Semmler, P. Awakowicz, H. Brunken and A. Ludwig
Plasma Sources Sci. and Technol., Vol: 21, No: 1 , published: 07 February 2012
Interface between Oxide Coatings and Plasma-damaged Polymers and Its Effects on Coating Adhesion and Structure
Jungheum Yun, Tae-Sung Bae, Sunghun Lee, Seunghun Lee, Jongjoo Rha and Gun-Hwan Lee
Plasma Processes and Polymers, Vol: 9, No: 2 , published: 02 February 2012
Relevance of Surface Modification of Polyamide 6.6 Fibers by Air Plasma Treatment on the Release of Caffeine
Cédric Labay, José Mª Canal and Cristina Canal
Plasma Processes and Polymers, Vol: 9, No: 2 , published: 02 February 2012
Free Radicals Generated by Ion Bombardment of a Semi-Crystalline PEEK Surface
Firas Awaja, Shengnan Zhang, Natalie James and David R. McKenzie
Plasma Processes and Polymers, Vol: 9, No: 2 , published: 02 February 2012
Control of Wettability of Plasma Polymers by Application of Ti Nano-Clusters
Ondřej Kylián, Oleksandr Polonskyi, Jiří Kratochvíl, Anna Artemenko, Andrei Choukourov, Martin Drábik, Pavel Solař, Danka Slavínská and Hynek Biederman
Plasma Processes and Polymers, Vol: 9, No: 2 , published: 02 February 2012
In situ Quartz Crystal Microbalance Measurements of Thin Protein Film Plasma Removal
Francesco Fumagalli, Jan Hanuš, Ondřej Kylián and François Rossi
Plasma Processes and Polymers, Vol: 9, No: 2 , published: 02 February 2012
Interaction Mechanisms between Ar[BOND]O2 Post-discharge and Biphenyl

Plasma Processes and Polymers, Vol: 9, No: 2 , published: 02 February 2012
Design and fabrication of piezoresistive strain gauges based on nanocrystalline diamond layers
Pavel Kulha, Oleg Babchenko, Alexander Kromka, Miroslav Husak, Ken Haenen
Vacuum, Vol: 86, No: 6 , published: 27 January 2012
Ion sputter etching of ZnO:Ga thin film surfaces
S. Flickyngerova, M. Netrvalova, I. Novotny, J. Bruncko, P. Gaspierik, P. Sutta, V. Tvarozek
Vacuum, Vol: 86, No: 6 , published: 27 January 2012
Electrical properties of nickel electrodes for high-k MOS structures
P. Benko, A. Vincze, L. Harmatha, I. Novotný, V. Řeháček
Vacuum, Vol: 86, No: 6 , published: 27 January 2012
Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
M. Mikulics, A. Fox, M. Marso, D. Grützmacher, D. Donoval, P. Kordoš
Vacuum, Vol: 86, No: 6 , published: 27 January 2012
Analysis of single junction a-Si:H solar cells grown on different TCO’s
Lucie Prušáková, Soňa Flickyngerová, Marinus Fischer, Ivan Novotný, Martijn Tijssen, Marie Netrvalová, Miro Zeman, Vladimír Tvarožek, Pavol Šutta
Vacuum, Vol: 86, No: 6 , published: 27 January 2012
Comparative study on dry etching of polycrystalline diamond thin films
Tibor Izak, Alexander Kromka, Oleg Babchenko, Martin Ledinsky, Karel Hruska, Elisseos Verveniotis
Vacuum, Vol: 86, No: 6 , published: 27 January 2012
Comparison of various wall conditionings on the reduction of H content and particle recycling in EAST
G. Z. Zuo, J. S. Hu, S. Zhen, J. G. Li, D. K. Mansfield, B. Cao, J. H. Wu, L. E. Zakharov and the EAST Team
Plasma Phys. and Contr. Fusion, Vol: 54, No: 1 , published: 24 January 2012
Particle injection in direct current air plasma spray: salient observations and optimization strategies
Srinivasan V.\Friis M.\Vaidya A.\et al.
Plasma Chem. Plasma Process., Vol: 27, No: 5 , published: 12 May 2008
Ponderomotive effects in an electromagnetic accelerator
Tolmachev Y.N.\Park Wontaek\Volynets V.N.\et al.
J. Plasma Phys., Vol: 72, No: 6 , published: 20 January 2008
Highly selective Si[3]N[4]/SiOC etching using dual frequency superimposed RF capacitively coupled plasma
Takase Akihiro\Nishiwaki Junya\Yamamoto Katsumi\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 7 , published: 26 November 2007
Plasma etch rates of porous silica low-k films with different dielectric constants
Ono Tetsuo\Takahashi Hideki\Kinoshita Keizo\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 11 , published: 10 November 2007
Modeling of feature profile evolution in SiO[2] as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma
Shimada Takashi\Yagisawa Takashi\Makabe Toshiaki
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 11 , published: 10 November 2007
Numerical simulation of metal plasma immersion ion implantation and deposition on a dielectric wedge
Kwok Dixon Tat-Kun
IEEE Trans. Plasma Sci., Vol: 34, No: 4 , published: 17 October 2007
Photoresist Etching by Atmospheric Pressure Uniform-Glow Plasma
Shouguo Wang, Xiangyu Xu, Lingli Zhao, and Tianchun Ye
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 8A , published: 06 August 2007
Measurement of Amount of Pattern Trim and Surface Chemistry for Organic Resist Etching in an Inductively Coupled Plasma in SO2–O2 Gas Mixtures
Takeshi K. Goto and Toshiaki Makabe
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 8A , published: 06 August 2007
Etching of high-k dielectric HfO[2] films in BCl[3]-containing plasmas enhanced with O[2] addition
Kitagawa Tomohiro\Nakamura Keisuke\Osari Kazushi\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 8-11 , published: 02 August 2007
Исследование нагрева электронов в мультиполярных магнитных системах и конструирование электрон-циклотрон-резонансных СВЧ-реакторов низкого давления
Петрин А.Б.
Теплофиз. высок. температур, Vol: 44, No: 1 , published: 10 July 2007
Plasma-etching processes for ULSI semiconductor circuits
Armacost M., Hoh P.D., Wise R. et al.
IBM J. Res. and Dev., Vol: 43, No: 1-2 , 1999
Surface science issues in plasma etching
Oehrlein G.S., Doemling M.F., Kastenmeier B.E.E. et al.
IBM J. Res. and Dev., Vol: 43, No: 1-2 , 1999
Effects of N[2] addition on aluminum alloy etching in inductively coupled plasma source
Kim Kil Ho, Baek Kye Hyun, Shin Kang Sup et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 10 , 1999
Chemical dry etching of Si Substrate in a discharge flow using Ar/CF[4] gas mixtures
Tsuji Masaharu, Okano Shinji, Tanak Atsushi, Nishimura Yukio
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11 , 1999
Study on the properties of interlayer low dielectric polyimide during Cl-based plasma etching of aluminum
Kim Sang Hoon, Moon Ho Sung, Woo Sang Gyun, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12B , 1999
Fabrication of photonic crystals consisting of Si nanopillars by plasma etching using self-formed masks
Tada Tetsuya, Poborchii Vladimir V., Kanayama Toshihiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12B , 1999
Effects of etching gases and bias rrequency on notching and charging in high-density plasma
Tabara Suguru
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Charge exchange ion energy distribution at the RF electrode in a plasma etching chamber
Mizutani Naoki, Hayashi Toshio
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Plasma properties of a negative ion plasma reactive ion etching system
Keller John H., Kocon W. Walter
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Magnetic neutral loop discharge (NLD) plasma and application to SiO[2] etching process
Chen Wei, Hayashi Toshio, Itoh Masahiro et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Behavior of F atoms and CF[2] radicals in fluorocarbon plasmas ror SiO[2]/Si etching
Tachibana Kunihide, Kamisugi Hideaki, Kawasaki Takeshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Effects of fluorocarbon films on CF radical in CF[4]/H[2] plasma
Arai Toshihiko, Goto Miki, Horikoshi Keita et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Dependence of driving frequency on capacitively coupled plasma in CF[4]
Segawa Sumie, Kurihara Masaru, Nakano Nobuhiko, Makabe Toshiaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
A numerical study of a collision-dominated inductively coupled plasma using particle-in-cell/Monte Carlo simulation
Oh Jin-Sung, Makabe Toshiaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Realistic etch yield of fluorocarbon ions in SiO[2] etch process
Hikosaka Yukinobu, Yayashi Hisataka, Sekine Makoto et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Simulation of variations in the negative ion density in time-modulated Cl[2] plasmas
Yokozawa Ayumi, Samukawa Seiji
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
In situ measurements of the resist etch rate for submicron patterns
Kawata Hiroaki, Fukuda Hiroyoshi, Matsunaga Takashi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Enhancement of dry-etching durabilities by energy or etchant quenching with aliphatic, aromatic and alicyclic homolpolymers, polymer blends and copolymers
Kushida Masahito, Saito Toshihiro, Harada Kieko et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Patterned platinum etching studies in an argon high-density plasma
Delprat Sebasten, Chaker Mohamed, Margot Joelle
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Mechanism of highly selective SiO[2] to Si[3]N[4] etching using C[4]F[8]+CO magnetron plasma
Hayashi H., Sekine M.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Thin film-detection employing freguency shift in sheath current oscillation
Urayama T., Niimi H., Fujii S., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Mechanism of highly selective SiO[2] to Si[3]N[4] etching using C[4]F[8]+CO magnetron plasma
Hayashi H., Sekine M.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Thin film-detection employing freguency shift in sheath current oscillation
Urayama T., Niimi H., Fujii S., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Effect of RF plasma etching on surface damage in CsLiB[6]O[10] crystal
Kamimura Tomosumi, Yoshimura Masashi, Mori Yusuke et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Etching a single micrometer-size particle in a plasma
Stoffels W. W., Stoffels E., Swinkels G. H. P. M., Boufnichel M., Kroesen G. M. W.
Phys. Rev. E: Stat. Nonlinear Soft Matter Phys., Vol: 59, No: 2 , 1999
Etching of silicon nitride in CCL[2]F[2], CHF[3], SiF[4] and SF[6] reactive plasma: a comparative study
Pant B.D., Tandon U.S.
Plasma Chem. Plasma Process., Vol: 19, No: 4 , 1999
Study on plasma etching of β-SiC thin films in SF[6] and the SF{6}+O[2] mixtures
Cahi Chang-chun, Yang Yin-tang, Li Yue-jin et al.
Acta phys. sin., Vol: 48, No: 3 , 1999
Using auger electron spectroscopy for chemical analysis of plasma Damage induced by reactive ion etching of SiO[2]
Matsui Miyako, Uchida Fumihiko, Katsuyama Kiyomi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11 , 1998
Spatial and temporal behavior of radicals in inductively coupled plasm for SiO[2] etching
Hayashi Shigenori, Yamanaka Michinari, Kubota Masafumi, Ogura Mototsugu
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Aluminum etch and after-corrosion characteristics in a m=0 helicon wave plasma etcher
Ha Jae Hee, Yim Myoung-ho, Kim Jae-jeong
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Study of self-limiting etching behavior in wet isotropic etching of silicon
Han Cheol-Hyun, Kim Eun-Sok
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Estimation of sidewall nonradiative recombination in GaInAsP/InP wire structures fabricated by low energy electron-cyclotron-resonance reactive-ion-beam-etching
Tamura M., Ando T., Nunoya N. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6A , 1998
Slant slot antenna-type electron cyclotron resonance plasma source
Watanabe Seiichi, Tamura Hitoshi, Sumiya Masahiro, Furuse Muneo, Kawasaki Sunao
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A , 1998
Dopant-dependent ion assisted etching kinetics in highly doped polysilicon reactive ion etching
Sato Masaaki
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A , 1998
The generation of high-density microwave plasma and its application to large-area microcrystalline silicon thin film formation
Shirai H., Arai T., Ueyama H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A-9B , 1998
Cubic boron nitride film synthesis by reactive sputtering of pure boron target in electron cyclotron resonance plasmas
Wakatsuchi M., Takaba Y., Ueda Y. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A-9B , 1998
Enhanced deposition rates in plasma sputter deposition
Thomann A.L., Charles C., Brault P., Laure C., Boswell R.
Plasma Sources Sci. and Technol., Vol: 7, No: 3 , 1998
Etching materials with an atmospheric-pressure plasma jet
Jeong J.Y., Babayan S.E., Tu V.J. et al.
Plasma Sources Sci. and Technol., Vol: 7, No: 3 , 1998
Etching of Ga-based III-V semiconductors in inductively coupled Ar and CH[4]H[2]-based plasma chemistries
Lee J.W., Abernathy C.R., Pearton S.J., Constantine C., Shul R.J., Hobson W.S.
Plasma Sources Sci. and Technol., Vol: 6, No: 4 , 1997
Etch product identification during CH[4]-H[2] RIE of InP using mass spectrometry
Feurprier Y., Cardinaud Ch., Grolleau B., Turban G.
Plasma Sources Sci. and Technol., Vol: 6, No: 4 , 1997
InGaAsP-InP nanoscale waveguide-coupledmicroring lasers with sub,illismpere threshold current using Cl[2]-N[2]-based high-density plasma etching
Park S., Kim S.-S., Wang L., et al.
IEEE J. Quantum Electron. , Vol: 41, No: 3
An atomic scale model of multilayer surface reactions and the feature profile evolution during plasma etching
Osano Yugo, Ono Kouichi
Jpn. J. Appl. Phys., Part 1, Vol: 44, No: 12
Quantitative analysis of CF[4] produced in the SiO[2] etching process using c-C[4]F[8], C[3]F[8], and C[2]F[6] plasmas by in situ mass spectrometry
Furuya Kenji, Hatano Yoshihiko
Jpn. J. Appl. Phys., Part 1, Vol: 43, No: 1
Effects of air exposure on SiO[2] surfaces irradiated with fluorocarbon plasma (Short Note)
Kurihara Kazuaki, Yamaoka Yoshikazu, Sekine Makoto
Jpn. J. Appl. Phys., Part 1, Vol: 43, No: 1
Requirements of neutral beam source regarding gas pressure and neutral angle for nanoscale etching
Kim Sung Jin, Lee Hae June, Yeom Geun Young, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 43, No: 10
Etching characteristics of manganese-doped zinc sulfide film using Cl[2]/CF[4] inductively coupled plasma
Yun Sun Jin, Kwon Kwang-Ho, Lee Yong-Eui, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 43, No: 5B
Исследование возможности ионно-стимулиpованного тpавления повеpхности полимеpов в плазме сильноточного диффузного pазpяда
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Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: , No: 8
Characteristics of Ag etching using inductively coupled Cl[2]-based plasmas
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Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 1
A new Stacked-Mask process utilizing spun-on carbon film for sub-130-nm etching
Abe Junko, Hayashi Hisataka, Kishigami Daizo, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 10
Investigations of surface reactions in neutral loop discharge plasma for high-aspect-ratio SiO[2] etching
Morikawa Y., Chen W., Hayashi T., Uchida T.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 3
Etching reactivity of negative ions generated in Cl[2] downstream plasma
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Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 3
Etching characteristics of organic polymers in the magnetic neutral loop discharge plasma
Morikawa Y., Hayashi T., Uchida T.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 3
Effect of etch gas on dry etching of ferroelectric Bi[3.25]La[0.75]Ti[3]O[12] thin films
Song Y.S., Kim H.I., Chung C.W.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 3
Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH[4]/H[2]/Ar and O[2] with constant Ar flow
Haneji N., Segami G., Ide T., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 6B
Transformation of dense cotnact holes during SiO[2] etching
Sakamori S., Fujiwara N., Miyatake H., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 6B
Fine pattern etching of molybdenum thin film and silicon substrate by using atmospheric line-shaped microplasma source
Okumura T., Saitoh M., Yashiro, Kimura T.
Jpn. J. Appl. Phys., Part 1, Vol: 42, No: 6B
Effects of oxygen and nitrogen atoms on SiOCH film etching in ultrahigh-frequency plasma
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Phys. Rev. A: At. Mol. Opt. Phys., Vol: 42, No: 3B
Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma
Hayashi S., Ishikawa K., Sekine M.
Jpn. J. Appl. Phys., Part 1, Vol: 41, No: 4A
Particle modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon
Shiozawa M., Nanbu K.
Jpn. J. Appl. Phys., Part 1, Vol: 41, No: 4A
SO[2] and NO[x] removal by electron beam and microwave induced non-thermal plasmas
Martin D., Ighigeanu D., Macarie R., et al.
Rom. Rep. Phys., Vol: 54, No: 6-10
Thermal behavior along depth of extreme ultraviolet lithography mask during dry etching
Chiba Akira, Hoshino Eiichi, Takahashi Masashi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 40, No: 12
High-efficiency neutral-beam generation by combination of inductively coupled plasma and parallel plate DC bias
Samukawa Seiji, Sakamoto Keisuke, Ichiki Katsunori
Jpn. J. Appl. Phys., Part 1, Vol: 40, No: 7B
A simplified model for the etch rate of novolac-based photoresist
ray R.P., Rhinehart R.R.
Plasma Chem. Plasma Process., Vol: 21, No: 1
A method of mechanistic model validation with a case study in plasma etching
Bray R.P., Rhinehart R.R.
Plasma Chem. Plasma Process., Vol: 21, No: 1
Травление материалов локализованным газовым разрядом
Абрамов А.В., Абрамова Е.А., Суровцев И.С.
Письма в ЖТФ, Vol: 27, No: 3
GaAs photonic crystals on SiO[2] fabricated by very-high-frequency anode-coupled reactive ion etching and wafer bonding
Saitoh Tadashi, Sogawa Tetsuomi, Notomi Masaya et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 11
Electron cyclotron resonance plasma etching of α-Ta for X-ray mask absorber using chlorine and fluoride gas mixture
Tsuhizawa Tai, Iriguchi Hiroki, Takahashi Chiharu et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
RF-plasma-assisted fast atom beam etching
Ono Takahito, Orimoto Norimune, Lee Seungseoup et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
Initial stage of hydrogen etching of Si surface investigated by infrared reflection absorption spectroscopy
Noda Hideyuki, Urisu Tsuneo, Kobayashi Yoshihiro, Ogino Toshio
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
In-situ time-resolve infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma
Ishikawa Kenji, Sekine Makoto
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma
Woo Sang-Gyun, Kim Sang Hoon, Ju Sup-Youl et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
Effects of H[2] addition in magnetized inductively coupled C[2]F[6] plasma etching of silica aerogel film
Wang Seok-Joo, Park Hyung-Ho, Yeom Geun-Young
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
Effects of SF[6] addition to O[2] plasma on polyimide etching
Kim Sang Hoon, Woo Sang-Gyun, Ahn Jinho
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
Plasma treatment and dry etch characteristics of organic low-k dielectrics
Wei Ta-Chin, Liu Chi-Hung, Shieh Jia-Ming et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 12B
Effects of discharge frequency in plasma etching and ultrahigh-frequency plasma source for high-performance etching for ultralarge-scale integrated circuits
Samukawa S., Donnelly V.M., Malyshev M.V.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 4A
A model for the mechanism of chlorinated plasma etching of aluminium
Baleo J.-N., Vignes M.-J.
Progr. Theor. Phys. Suppl., Vol: , No: 138
О механизме взрывного травления пленки полиамидокислоты в неравновесной кислородной плазме
Амиров И.И.
Ж. техн. физ., Vol: 70, No: 5