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   Electrical properties of solids.
      Semiconductors.
Transparent p-type Zn-doped CuCrO2 films by sol- gel processing
Hong-Ying Chen, Chun-Chao Yang
Surf. Coat. Technol., Vol: 231, No: , published: 23 September 2015
Temperature and pressure dependence of the electronic and optical properties of GaxIn1-xAsyP1- ymatching different substrates
Abdel Razik Degheidy, Elkenany Brens Elkenany
Physica B, Vol: 456, No: , published: 22 January 2015
Scaling of Efros–Shklovskii variable range hopping conduction in ZnO:Cd thin films by sol
Li Zhang, Guohong Liu, Zhen Tang, Yan Deng, Yibao Li, Jiangying Yu, Xuebin Zhu
Physica B, Vol: , No: , published: 22 October 2014
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors
Sung Haeng Cho, Min Ki Ryu, Hee-Ok Kim, Oh-Sang Kwon, Eun-Sook Park, Yong-Suk Roh, Chi-Sun Hwang ,Sang-Hee Ko Park
Phys. Status Solidi A, Vol: 211, No: , published: 23 September 2014
An ab initio computational study of pure Zn3 Nand its native point defects and dopants Cu, Ag and Au
Nanke Jiang, Jason L. Roehl, Sanjay V. Khare, Daniel G. Georgiev, Ahalapitiya H. Jayatissa
 

Thin Solid Films, Vol: 564, No: , published: 08 August 2014
Effects of substrate temperature on the Cu2 ZnSnS4 films deposited by radio-frequency sputtering with single target
Bao-Tang Jheng, Kuo-Min Huang, Shang-Fu Chen, Meng-Chyi Wu
Thin Solid Films, Vol: 564, No: , published: 08 August 2014
Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers
Rongsheng Chen, Wei Zhou, Meng Zhang, Hoi-Sing Kwok
Thin Solid Films, Vol: 564, No: , published: 08 August 2014
ZnTe thin films grown by electrodeposition technique on Fluorine Tin Oxide substrates
O. Skhouni, A. El Manouni, M. Mollar, R. Schrebler, B. Mari
Thin Solid Films, Vol: 564, No: , published: 08 August 2014
Properties of boron-rich layer formed by boron diffusion in n-type silico
Chanseok Kim, Sungeun Park, Young Do Kim, Hyomin Park, Seongtak Kim, Hyunho Kim, Hae-seok Lee, Donghwan Kim
Thin Solid Films, Vol: 564, No: , published: 08 August 2014
Fabrication of amorphous Si and C anode films via co-sputtering for an all-solid-state battery
K.S. Lee, S.H. Lee, S.P. Woo, H.S. Kim, Y.S. Yoon
Thin Solid Films, Vol: 564, No: , published: 08 August 2014
Investigation of temperature dependent electrical properties of Ni/Al0.26 Ga0.74 N Schottky barrier diodes
A. Akkaya, T. Karaaslan, M. Dede, H. Çetin, E. Ayyıldız
Thin Solid Films, Vol: 564, No: , published: 08 August 2014
Study of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene crystal) based organic field effect transistors (OFETs)
Ghulam Murtaza, Ishtiaq Ahmad, HongZheng Chen, Jiake Wu
 

Synth. Met., Vol: 2014, No: 194 , published: 29 July 2014
Study of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene crystal) based organic field effect transistors (OFETs)
Ghulam Murtaza, Ishtiaq Ahmad, HongZheng Chen, Jiake Wu
Synth. Met., Vol: 2014, No: 194 , published: 29 July 2014
Optical properties of perylene-monoimide (PMI) and perylene-diimide (PDI) organic semiconductor thin films
Z. Kişnişci, O.F. Yuksel, M. Kuş
Synth. Met., Vol: 2014, No: 194 , published: 29 July 2014
Optical properties of perylene-monoimide (PMI) and perylene-diimide (PDI) organic semiconductor thin films
 
Z. Kişnişci, O.F. Yuksel, M. Kuş
 

Synth. Met., Vol: 194, No: , published: 29 July 2014
Optical properties of perylene-monoimide (PMI) and perylene-diimide (PDI) organic semiconductor thin films
 
Z. Kişnişci, O.F. Yuksel, M. Kuş
 

Synth. Met., Vol: 194, No: , published: 29 July 2014
Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
A.A. Hendi, R.H. Al Orainy
Synth. Met., Vol: 193, No: , published: 29 July 2014
Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
 
A.A. Hendi, R.H. Al Orainy
 

Synth. Met., Vol: 193, No: , published: 29 July 2014
Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
 
A.A. Hendi, R.H. Al Orainy
 

Synth. Met., Vol: 193, No: , published: 29 July 2014
Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
 
A.A. Hendi, R.H. Al Orainy
 

Synth. Met., Vol: 193, No: , published: 29 July 2014
Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
 
A.A. Hendi, R.H. Al Orainy
 

Synth. Met., Vol: 193, No: , published: 29 July 2014
Experimental and theoretical study of AC electrical conduction mechanisms of Bis (4-acetylanilinium) tetrachloridozincate
M. Amine Fersi, I. Chaabane, M. Gargouri
Physica B, Vol: 444, No: , published: 22 July 2014
Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
A.A. Hendi, R.H. Al Orainy
Synth. Met., Vol: 2014, No: 193 , published: 01 July 2014
Charge transport and dielectric relaxation processes in aniline-based oligomers
M. Mrlik, R. Moučka, M. Ilčikova, P. Bober, N. Kazantseva, Z. Scaronpitalsky, M. Trchova, J. Stejskal
Synth. Met., Vol: 192, No: , published: 29 June 2014
Charge transport and dielectric relaxation processes in aniline-based oligomers
 
M. Mrlik, R. Moučka, M. Ilčikova, P. Bober, N. Kazantseva, Z. Scaronalsky, M. Trchova, J. Stejskal
 

Synth. Met., Vol: 2014, No: 192 , published: 29 June 2014
Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon
Tanay, F., Dubois, S., Veirman, J., Enjalbert, N., Stendera, J., Perichaud, I.
IEEE Trans. Electron Devices , Vol: 61, No: 5 , published: 23 May 2014
A New Interface-Trapped-Charge-Degraded Subthreshold Current Model for Quadruple-Gate MOSFETs
Chiang Te-Kuang
IEEE Trans. Electron Devices , Vol: 61, No: 5 , published: 23 May 2014
Modeling of the Steady State and Switching Characteristics of a Normally Off 4H-SiC Trench Bipolar-Mode FET
Pezzimenti, F.
IEEE Trans. Electron Devices , Vol: 60, No: 4 , published: 23 May 2014
The Competitive and Combining Effects of Grain Boundary and Fe/Mo Antisite Defects on the Low-Field Magnetoresistance in Sr2 FeMoO6
Jin-Feng Wang, Zheng Li, Xi-Jun Xu, Zheng-Bin Gu, Guo-Liang Yuan ,Shan-Tao Zhang
J. Am. Ceram. Soc. , Vol: 97, No: 4 , published: 27 April 2014
Modeling Quasi-Static Characteristics of Devices Consisting of Silicon, Dielectrics, and Conductors Based on Their Helmholtz Free Energy
Sattar, M.A., Gunther, N., Rahman, M.
IEEE Trans. Electron Devices , Vol: 61, No: 4 , published: 23 April 2014
Improving photovoltaic performance of titanium oxide thin films by integration of iron doping and dye sensitization
Chien-Tsung Wang, Han-Long Siao
Surf. Coat. Technol., Vol: 244, No: , published: 09 January 2014
First-principles study of thermal transport in FeSb2
Bolin Liao, Sangyeop Lee, Keivan Esfarjani, and Gang Chen
Phys. Rev. B: Condens. Matter, Vol: 89, No: 3 , published: 08 January 2014
Epitaxial strain effect on the Jeff = 1/2 moment orientation in Sr2IrO4 thin films
Ludi Miao, Hong Xu, and Z. Q. Mao
Phys. Rev. B: Condens. Matter, Vol: 89, No: 3 , published: 08 January 2014
Optical conductivity of a strong-coupling Fröhlich polaron
S. N. Klimin and J. T. Devreese
Phys. Rev. B: Condens. Matter, Vol: 89, No: 3 , published: 03 January 2014
Effect of thermal annealing on electrical and optical properties of Ba-doped SrCu2O2 films on glass substrates
Afzal Khan, Carmen Jimenez, Odette Chaix-Pluchery, Herve Roussel ,Jean-Luc Deschanvres
Phys. Status Solidi A, Vol: 210, No: 12 , published: 23 December 2013
Evaluation of optimal chlorine doping concentration in zinc oxide on glass for application as new transparent conductive oxide
Jae-chul Lee, Nagarajan Ganapathi Subramaniam, Ju-won Lee, Jae-choon Lee , Tae-won Kang
Phys. Status Solidi A, Vol: 210, No: 12 , published: 23 December 2013
Development of fast and sensitive ultraviolet photodetector using p-type NiO/n-type TiO 2 heterostructures
K. Khun, Z. H. Ibupoto , M. Willander
Phys. Status Solidi A, Vol: 210, No: 12 , published: 23 December 2013
Germanium -Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration
Yue Yang, Genquan Han, Pengfei Guo ,Wei Wang, Xiao Gong, Lanxiang Wang, Kain Lu Low, Yee-Chia Yeo
IEEE Trans. Electron Devices , Vol: 60, No: 12 , published: 23 December 2013
Persistent Photoconductivity in Strontium Titanate
Marianne C. Tarun, Farida A. Selim, Matthew D. McCluskey
Phys. Rev. Lett., Vol: 111, No: 18 , published: 01 November 2013
Magnetic Field-Induced Giant Enhancement of Electron-Phonon Energy Transfer in Strongly Disordered Conductors
A. V. Shtyk, M. V. Feigelman, V. E. Kravtsov
Phys. Rev. Lett., Vol: 111, No: 16 , published: 18 October 2013
Enhanced Seebeck coefficient of bismuth telluride compounds with graded doping profiles
Hung-Hsien Huang,Meng-Pei Lu,Chien-Hao Chiu,Lin-Chieh Su,Chien-Neng Liao,Jing-Yi Huang,Huey-Lin Hsieh
Appl. Phys. Lett. , Vol: 103, No: 16 , published: 03 October 2013
AsGa + antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures
A. Stesmans,S. Nguyen,V. V. Afanas'ev
Appl. Phys. Lett. , Vol: 103, No: 16 , published: 03 October 2013
Effect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy
H. W. Liu, L. M. Wong, S. J. Wang, X. H. Zhang
Appl. Phys. Lett. , Vol: 103, No: 15 , published: 03 October 2013
Electricity generated from ambient heat across a silicon surface
Guoan Tai<,Zihan Xu<,Jinsong Liu
Appl. Phys. Lett. , Vol: 103, No: 16 , published: 03 October 2013
Structural, electronic, and optical properties of Cu3-V-VI4 compound semiconductors
Tingting Shi,Wan-Jian Yin,Yanfa Yan
Appl. Phys. Lett. , Vol: 103, No: 15 , published: 03 October 2013
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
Ernest Y. Wu, Baozhen Li, James H. Stathis
Appl. Phys. Lett. , Vol: 103, No: 15 , published: 03 October 2013
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
Ernest Y. Wu, Baozhen Li, James H. Stathis
Appl. Phys. Lett. , Vol: 103, No: 15 , published: 03 October 2013
Carrier Separation at Dislocation Pairs in CdTe
Chen Li, Yelong Wu, Timothy J. Pennycook, Andrew R. Lupini, Donovan N. Leonard, Wanjian Yin, Naba Paudel, Mowafak Al-Jassim, Yanfa Yan, Stephen J. Pennycook
Phys. Rev. Lett., Vol: 111, No: 9 , published: 18 August 2013
Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity
D. A. MacLellan, D. C. Carroll, R. J. Gray, N. Booth, M. Burza, M. P. Desjarlais, F. Du, B. Gonzalez-Izquierdo, D. Neely, H. W. Powell, A. P. L. Robinson, D. R. Rusby, G. G. Scott, X. H. Yuan, C.-G. Wahlström, and P. McKenna
Phys. Rev. Lett., Vol: 111, No: 9 , published: 18 August 2013
One-dimensional simulation of sequentially processed Cu(In1-xGax)(Se1-ySy)2Cu)In1-xGax)(Se1-ySy)2
 
Ingo Riedel, Jan Keller, Jurgen Parisi, Thomas Dalibor, Alejandro Avellan
 

Physica B, Vol: 439, No: , published: 29 May 2013
Deep level defects in ZnO
 
J. Bollmann, D.K. Simon
 

Physica B, Vol: 439, No: , published: 22 May 2013
Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study
Vl. Kolkovsky, L. Scheffler, J. Weber
Physica B, Vol: 439, No: , published: 22 May 2013
Electronic structure of boron doped diamond: An x-ray spectroscopic study
P.-A. Glans,T. Learmonth,K. E. Smith,S. Ferro,A. De Battisti,M. Mattesini,J.-H. Guo
Appl. Phys. Lett. , Vol: 102, No: 16 , published: 03 April 2013
Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors
Hui-Xiong Deng, Su-Huai Wei, Shu-Shen Li, Jingbo Li, and Aron Walsh
Phys. Rev. B: Condens. Matter, Vol: 87, No: 12 , published: 21 March 2013
Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2
S. Horzum, H. Sahin, S. Cahangirov, P. Cudazzo, A. Rubio, T. Serin, and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 87, No: 12 , published: 14 March 2013
Nuclear-spin-dependent coherent population trapping of single nitrogen-vacancy centers in diamond
D. Andrew Golter, Khodadad N. Dinyari, and Hailin Wang
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 87, No: 3 , published: 01 March 2013
Determining binding energies of valence-band electrons in insulators and semiconductors via lanthanide spectroscopy
Pieter Dorenbos
Phys. Rev. B: Condens. Matter, Vol: 87, No: 3 , published: 14 January 2013
Photocarrier generation in CuxO thin films deposited by radio frequency sputtering
Thien Viet Pham, Manohar Rao,P. Andreasson,Yuan Peng,Junling Wang,K. B. Jinesh
Appl. Phys. Lett. , Vol: 102, No: 3 , published: 03 January 2013
Predicted electronic and structural properties of BxIn1−xAs
Pages 2739-2743
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates
Pages 2825-2828
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Optical properties of N and transition metal R (R=V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) codoped anatase TiO2
Pages 2709-2715
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Optical spectra and defect structure for image ions in ZnS at low temperature
Pages 2808-2810
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Non-doped phosphorescent white organic light-emitting devices with a quadruple-quantum-well structure
Pages 2753-2757
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Simultaneous effects of pressure and temperature on the binding energy and diamagnetic susceptibility of a laser dressed donor in a spherical quantum dot
Pages 2790-2793
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Double detected spin-dependent quantum dot
Pages 2794-2802
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode
Pages 2721-2724
Physica B, Vol: 407, No: 14 , published: 15 July 2012
First-principles study of the effect of heavy Ni doping on the electronic structure and absorption spectrum of wurtzite ZnO
Pages 2359-2364
Physica B, Vol: 407, No: 13 , published: 01 July 2012
Annealing mechanisms of self-interstitial related defect E1=Ec−0.39 eV in irradiated silicon
Pages 2508-2511
Physica B, Vol: 407, No: 13 , published: 01 July 2012
External electric field and hydrostatic pressure effects on the binding energy and self-polarization of an off-center hydrogenic impurity confined in a GaAs/AlGaAs square quantum well wire
Pages 2637-2641
Physica B, Vol: 407, No: 13 , published: 01 July 2012
Conduction mechanism and the dielectric relaxation process of a-Se75Te25−xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses
Pages 2476-2485
Physica B, Vol: 407, No: 13 , published: 01 July 2012
An approach for studying the influence of uniaxial strain (pressure) on the temperature of the Bose–Einstein condensation of intersite bipolarons: Possible implementation for image cuprates
Pages 2490-2494
Physica B, Vol: 407, No: 13 , published: 01 July 2012
Size dependent effective band gap, optical absorption coefficients and refractive index changes in a wide ZnS/Zn1−xMgxS strained quantum well
Pages 2578-2583
Physica B, Vol: 407, No: 13 , published: 01 July 2012
Inelastic low-temperature transport through a quantum dot with a Mn ion
Pages 2324-2329
J. Magn. Magn. Mater., Vol: 324, No: 14 , published: 01 July 2012
Strong Quantum Interference in Strongly Disordered Bosonic Insulators
S. V. Syzranov, A. Moor, K. B. Efetov
Phys. Rev. Lett., Vol: 108, No: 25 , published: 18 June 2012
Excitons in cylindrical GaAs–Ga1−xAlxAs quantum dots under applied electric field
Pages 2351-2357
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements
Pages 2229-2233
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Linear and nonlinear intersubband optical absorption in a disk-shaped quantum dot with a parabolic potential plus an inverse squared potential in a static magnetic field
Pages 2334-2339
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Study on the structure and optical property of Zn1−xCuxO sol–gel thin films on quartz substrate
Pages 2254-2257
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Structure and optical properties of GeGaS films deposited by thermal evaporation
Pages 2340-2343
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Photoconductivity of Se85−xTe15Hgx thin films
Pages 2267-2271
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Optical absorptions of a biexciton quantum dot
Pages 2329-2333
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Photoluminenscence property of ferromagnetic ZnMnO thin films
Pages 2126-2130
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces
Pages 2131-2135
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Indium-tin-oxide thin films deposited on polyethylene-terephthalate substrates by substrate-biased RF magnetron sputtering
Chih-Hao Liang, Xiaoding Qi
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Phase development, microstructure and optical properties of Cu2ZnSnSethin films modified with Pb and Ti
Seung Min Lee, Bhaskar Chandra Mohanty, Yeon Hwa Jo, Deuk Ho Yeon, Yong Soo Cho
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Efficiency of GaN/InGaN double-heterojunction photovoltaic cells under concentrated illumination
Ming-Hsien Wu, Sheng-Po Chang, Wen-Yih Liao, Mu-Tao Chu, Shoou-Jinn Chang
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Low-temperature growth of Na doped CIGS films on flexible polymer substrates by pulsed laser ablation from a Na containing target
Chia-Chuan Chen, Xiaoding Qi, Mu-Gong Tsai, Yun-Fang Wu, In-Gann Chen, Cen-Ying Lin, Ping-Han Wu, Kuang-Po Chang
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Influence of the molybdenum thickness on the conversion efficiency of thin-film a-Si:H solar cells grown on a 304 stainless steel substrate
Wen-Cheng Ke, Shuo-Jen Lee, Shiow-Long Chen, Cheng-Hong Shih, Yu-Cheng Chang
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration
Seung Wook Shin, G.L. Agawane, In Young Kim, Seung Hyun Jo, Min Sung Kim, Gi-Seok Heo, Jin Hyeok Kim, Jeong Yong Lee
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Nitride-based metal–insulator–semiconductor ultraviolet sensors with a sputtered lanthanum oxide (La2O3) insulator
Po-Chang Chen, Chin-Hsiang Chen, Chia-Ming Tsai, Chung-Fu Cheng, San-Lein Wu
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium gallium zinc-oxide thin film transistors
Geng-Wei Chang, Ting-Chang Chang, Jhe-Ciou Jhu, Tsung-Ming Tsai, Yong-En Syu, Kuan-Chang Chang, Fu-Yen Jian, Ya-Chi Hung, Ya-Hsiang Tai
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Characterization of polyaniline counter electrodes for dye-sensitized solar cells
Jeng-Yu Lin, Wei-Yan Wang, Yi-Ting Lin
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Self-cleaning and antireflection properties of titanium oxide film by liquid phase deposition
Jung-Jie Huang, Yu-Tsu Lee
Surf. Coat. Technol., Vol: 231, No: , published: 09 June 2012
Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices
Adenilson J. Chiquito, Cleber A. Amorim, Olivia M. Berengue, Luana S. Araujo, Eric P. Bernardo and Edson R. Leite
J. Phys.: Condens. Matter. , Vol: 24, No: 22 , published: 06 June 2012
Novel method for photovoltaic energy conversion using surface acoustic waves in piezoelectric semiconductors
Pages 1969-1972
Physica B, Vol: 407, No: 11 , published: 01 June 2012
Multiscale calculations of thermoelectric properties of n-type Mg2Si1−xSnx solid solutions
X. J. Tan, W. Liu, H. J. Liu, J. Shi, X. F. Tang, and C. Uher
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 31 May 2012
Spin dynamics and spin noise in the presence of randomly varying spin–orbit interaction in a semiconductor quantum wire
Pratik Agnihotri and Supriyo Bandyopadhyay
J. Phys.: Condens. Matter. , Vol: 24, No: 21 , published: 30 May 2012
Planar Dirac electrons in magnetic quantum dots
Ning Yang and Jia-Lin Zhu
J. Phys.: Condens. Matter. , Vol: 24, No: 21 , published: 30 May 2012
Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistent GW band structures
Atchara Punya and Walter R. L. Lambrecht
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 29 May 2012
Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures
Hui-Xiong Deng, Shu-Shen Li, Jingbo Li, and Su-Huai Wei
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 29 May 2012
Exciton polaritons in a CuBr microcavity with HfO2/SiO2 distributed Bragg reflectors
M. Nakayama, Y. Kanatanai, T. Kawase, and D. Kim
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 29 May 2012
Treatment of carrier scattering in quantum dots beyond the Boltzmann equation
Alexander Steinhoff, Paul Gartner, Matthias Florian, and Frank Jahnke
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 29 May 2012
Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor
Dmitry Turchinovich, Jørn M. Hvam, and Matthias C. Hoffmann
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 29 May 2012
Raman scattering by wave-vector-dependent coupled plasmon/LO-phonon modes in n-type InN
YongJin Cho, Manfred Ramsteiner, and Oliver Brandt
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 29 May 2012
PbTe/PbSnTe heterostructures as analogs of topological insulators
Ryszard Buczko and Łukasz Cywiński
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 29 May 2012
Single well or double well: First-principles study of 8H and 3C inclusions in the 4H SiC polytype
Mao-Sheng Miao and Walter R. L. Lambrecht
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 29 May 2012
GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy
J. S. Hwang, J. T. Tsai, I. C. Su, H. C. Lin, Y. T. Lu, P. C. Chiu, J. I. Chyi
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Temperature dependent distinct coupling and dispersions of heavy- and light-hole excitonic polaritons in ZnO
C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, F. Zhang, C. M. Che
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors
Weikai Xu, Hemant Rao, Gijs Bosman
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation
Rupak Bhattacharya, Bipul Pal, Bhavtosh Bansal
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN
A. Sedhain, J. Y. Lin, H. X. Jiang
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, K. M. Itoh
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer
S. A. Chevtchenko, E. Cho, F. Brunner, E. Bahat-Treidel, J. Würfl
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures
Jinkyoung Yoo, Bonghwan Chon, Wei Tang, Taiha Joo, Le Si Dang, Gyu-Chul Yi
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction of GaN light emitting diode applications
Sung Jin An
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Surface plasmon polariton-controlled tunable quantum-dot emission
R. J. Moerland, H. T. Rekola, G. Sharma, A.-P. Eskelinen, A. I. Väkeväinen, P. Törmä
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Emission from a dipole-forbidden energy state in a ZnO quantum dot induced by a near-field interaction with a fiber probe
T. Yatsui, M. Tsuji, Y. Liu, T. Kawazoe, M. Ohtsu
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation
B. Yao, Z. B. Fang, Y. Y. Zhu, T. Ji, G. He
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure
A. Segura, V. Panchal, J. F. Sánchez-Royo, V. Marín-Borrás, V. Muñoz-Sanjosé, P. Rodríguez-Hernández, A. Muñoz, E. Pérez-González, F. J. Manjón, and J. González
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 24 May 2012
Effect of strain on hyperfine-induced hole-spin decoherence in quantum dots
Franziska Maier and Daniel Loss
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 24 May 2012
GW quasiparticle bandgaps of anatase TiO2 starting from DFT + U
Christopher E. Patrick and Feliciano Giustino
J. Phys.: Condens. Matter. , Vol: 24, No: 20 , published: 23 May 2012
Microcavity effect on the pump–probe intersubband response of multiple-quantum-well structures
M. Załużny
J. Phys.: Condens. Matter. , Vol: 24, No: 20 , published: 23 May 2012
Intrinsic defects and dopability of zinc phosphide
Steven Demers and Axel van de Walle
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 22 May 2012
Transport properties of HfO2−x based resistive-switching memories
Zhongrui Wang, HongYu Yu, Xuan Anh Tran, Zheng Fang, Jinghao Wang, and Haibin Su
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 22 May 2012
Theory of hopping conduction in arrays of doped semiconductor nanocrystals
Brian Skinner, Tianran Chen, and B. I. Shklovskii
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 22 May 2012
Suppression of phonon heat conduction in cross-section-modulated nanowires
D. L. Nika, A. I. Cocemasov, C. I. Isacova, A. A. Balandin, V. M. Fomin, and O. G. Schmidt
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 22 May 2012
Electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determined by polarized x-ray spectroscopy and Seebeck measurements
Martin Magnuson, Maurizio Mattesini, Ngo Van Nong, Per Eklund, and Lars Hultman
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 22 May 2012
Dynamic polariton condensation in a single GaN nanowire-dielectric microcavity
Ayan Das, Pallab Bhattacharya, Animesh Banerjee, and Marc Jankowski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 22 May 2012
Temperature dependence of the energy gap and spin-orbit splitting in a narrow-gap InGaAsSb solid solution
M. Motyka, F. Janiak, G. Sęk, J. Misiewicz, K. D. Moiseev
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Transmission properties of surface-plasmon-polariton coherence
Takuma Aihara, Mitsuo Fukuda
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Acceptor-like deep level defects in ion-implanted ZnO
L. Vines, J. Wong-Leung, C. Jagadish, V. Quemener, E. V. Monakhov, B. G. Svensson
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers
Zhiyuan Zheng, Zimin Chen, Yingda Chen, Shanjin Huang, Bingfeng Fan, Yulun Xian, Weiqing Jia, Zhisheng Wu, Gang Wang, Hao Jiang
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets
B. F. Gao, P. Gehring, M. Burghard, K. Kern
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon
Jianfei Wang, Timothy Zens, Juejun Hu, Piotr Becla, Lionel C. Kimerling, Anuradha M. Agarwal
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures
Takayuki Hasegawa, Yoshihiro Takagi, Hideo Takeuchi, Hisashi Yamada, Masahiko Hata, Masaaki Nakayama
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
The recovery mechanism of the light-induced instability of the amorphous InGaZnO thin film transistors
Chao-Lung Wang, Huang-Chung Cheng, Chun-Yu Wu, I-Che Lee, Yu-Ting Cheng, Po-Yu Yang, Chih-Hung Tsai, Chun-Hsiang Fang, Chung-Chun Lee
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Silicon nanowire atomic force microscopy probes for high aspect ratio geometries
Brian A. Bryce, B. Robert Ilic, Mark C. Reuter, Sandip Tiwari
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
A. M. Hoang, G. Chen, A. Haddadi, S. Abdollahi Pour, M. Razeghi
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
Keun-Man Song, Jong-Min Kim, Bong-Kyun Kang, Dae-Ho Yoon, S. Kang, Sang-Won Lee, Sung-Nam Lee
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Terahertz time-domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films
Meehyun Lim, Sung-Jin Choi, Gyu-Seok Lee, Myeong-Lok Seol, Youngwoong Do, Yang-Kyu Choi, Haewook Han
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Interfacial confinement in core-shell nanowires due to high dielectric mismatch
A. A. Sousa, T. A. S. Pereira, A. Chaves, J. S. de Sousa, G. A. Farias
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Exciton confinement and trapping dynamics in double-graded-bandgap quantum nanowires
J. Szeszko, V. V. Belykh, P. Gallo, A. Rudra, K. F. Karlsson, N. N. Sibeldin, E. Kapon
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
K. Hestroffer, C. Leclere, V. Cantelli, C. Bougerol, H. Renevier, B. Daudin
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Extremely high-density GaAs quantum dots grown by droplet epitaxy
M. Jo, T. Mano, Y. Sakuma, K. Sakoda
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Controlling photo-induced spectral changes in CdSe/ZnS quantum dots by tuning inter-dot energy transfer
G. V. Shcherbatyuk, P. Talbot, S. Ghosh
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Determination of excitonic size with sub-nanometer precision via excitonic Aharonov-Bohm effect in type-II quantum dots
B. Roy, H. Ji, S. Dhomkar, F. J. Cadieu, L. Peng, R. Moug, M. C. Tamargo, I. L. Kuskovsky
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
M. F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, R. Goldhahn
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping
K. G. Rana, V. Khikhlovskyi, T. Banerjee
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Schottky diode with excellent performance for large integration density of crossbar resistive memory
Gun Hwan Kim, Jong Ho Lee, Jeong Hwan Han, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Tae Joo Park, Cheol Seong Hwang
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) p-channel metal-oxide-semiconductor field-effect transistor
K. Ota, M. Saitoh, Y. Nakabayashi, T. Ishihara, K. Uchida, T. Numata
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals
V. Scherer, C. Janowitz, A. Krapf, H. Dwelk, D. Braun, and R. Manzke
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Structure and band gap tuning of transparent (Ba1−xSrx)SnO3 thin films epitaxially grown on MgO substrates
Qinzhuang Liu, Bing Li, Jianjun Liu, Hong Li, Zhongliang Liu, Kai Dai, Guangping Zhu, Peng Zhang, Feng Chen and Jianming Dai
Europhys. Lett. , Vol: 98, No: 4 , published: 20 May 2012
Bipolaron formation in organic semiconductors at the interface with dielectric gates
C. A. Perroni, V. Cataudella
Europhys. Lett. , Vol: 98, No: 4 , published: 20 May 2012
Superfluidity and effective mass of magnetoexcitons in topological insulator bilayers: Effect of inter-Landau-level Coulomb interaction
Zhigang Wang, Zhen-Guo Fu, Ping Zhang
Europhys. Lett. , Vol: 98, No: 4 , published: 20 May 2012
Spin and orbital blockade in quantum transport through double quantum dots
Ai-Xian Li, Su-Qing Duan and Wei Zhang
Europhys. Lett. , Vol: 98, No: 4 , published: 20 May 2012
Stable interstitial dopant–vacancy complexes in ZnO
B. Puchala and D. Morgan
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 18 May 2012
Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations
A. N. Ramanayaka, R. G. Mani, J. Iñarrea, and W. Wegscheider
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 18 May 2012
Landau level spectroscopy of surface states in the topological insulator Bi0.91Sb0.09 via magneto-optics
A. A. Schafgans, K. W. Post, A. A. Taskin, Yoichi Ando, Xiao-Liang Qi, B. C. Chapler, and D. N. Basov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 17 May 2012
The electronic structure and optical response of rutile, anatase and brookite TiO2
M. Landmann, E. Rauls and W. G. Schmidt
J. Phys.: Condens. Matter. , Vol: 24, No: 19 , published: 16 May 2012
Strain-induced changes to the electronic structure of germanium
H. Tahini, A. Chroneos, R. W. Grimes, U. Schwingenschlögl and A. Dimoulas
J. Phys.: Condens. Matter. , Vol: 24, No: 19 , published: 16 May 2012
Self-trapping of single and paired electrons in Ge2Se3
A. H. Edwards, Kristy A. Campbell and Andrew C. Pineda
J. Phys.: Condens. Matter. , Vol: 24, No: 19 , published: 16 May 2012
Exciton phase transitions in semiconductor quantum wells with disc-shaped electrode
A. A. Chernyuk, V. I. Sugakov and V. V. Tomylko
J. Phys.: Condens. Matter. , Vol: 24, No: 19 , published: 16 May 2012
Relationship between electron-LO phonon and electron-light interaction in quantum dots
Nikola Prodanović, Zoran Ikonić, Dragan Indjin, and Paul Harrison
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 16 May 2012
Hydrogen shallow donors in ZnO and rutile TiO2
Pages 1456-1461
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC
Pages 1462-1466
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Ion implantation induced defects in ZnO
Pages 1481-1484
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Inductively coupled plasma induced deep levels in epitaxial n-GaAs
Pages 1497-1500
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Surface morphology and electronic structure of halogen etched InAs (1 1 1)
Pages 1591-1594
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Field effect and charge injection in hybrid nanorod heterostructure
Pages 1513-1516
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts
Pages 1529-1532
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Photoconduction spectroscopy of p-type GaSb films
Pages 1656-1659
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Observation of preformed electron-hole Cooper pairs in highly excited ZnO
Marijn A. M. Versteegh, A. J. van Lange, H. T. C. Stoof, and Jaap I. Dijkhuis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 15 May 2012
Deciphering the atomic structure of a complex Sr/Ge (100) phase via scanning tunneling microscopy and first-principles calculations
Boris Lukanov, Kevin Garrity, Sohrab Ismail-Beigi, and Eric I. Altman
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 15 May 2012
Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects
Pages 1550-1552
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Persistent exciton-type many-body interactions in GaAs quantum wells measured using two-dimensional optical spectroscopy
Daniel B. Turner, Patrick Wen, Dylan H. Arias, Keith A. Nelson, Hebin Li, Galan Moody, Mark E. Siemens, and Steven T. Cundiff
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 15 May 2012
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
Pages 1493-1496
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Sensitizing effects of ZnO quantum dots on red-emitting Pr3+-doped SiO2 phosphor
Pages 1607-1610
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness
Pages 1566-1569
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Optical characterization of individual quantum dots
Pages 1472-1475
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques
Pages 1538-1542
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition
Pages 1546-1549
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Polarized emission and excitonic fine structure energies of InGaN quantum dots
Pages 1553-1555
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Concentration effect of Tm3+ on cathodoluminescence properties of SiO2:Tm3+ and SiO2:Ho3+,Tm3+ systems
Pages 1582-1585
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)
Pages 1570-1573
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes
Pages 1574-1577
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact
Pages 1599-1602
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations
M. Baranowski, R. Kudrawiec, M. Latkowska, M. Syperek, J. Misiewicz, J. A. Gupta
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Electronic effects of Se and Pb dopants in TlBr
Holland M. Smith, III, David J. Phillips, Ian D. Sharp, Jeffrey W. Beeman, Daryl C. Chrzan, Nancy M. Haegel, Eugene E. Haller, Guido Ciampi, Hadong Kim, Kanai S. Shah
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Electronic properties of Si(111)-7×7 and related reconstructions: Density functional theory calculations
Manuel Smeu, Hong Guo, Wei Ji, and Robert A. Wolkow
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 14 May 2012
Phonon conduction in PbSe, PbTe, and PbTe1−xSex from first-principles calculations
Zhiting Tian, Jivtesh Garg, Keivan Esfarjani, Takuma Shiga, Junichiro Shiomi, and Gang Chen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 18 , published: 14 May 2012
Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes
Zonghui Su, Li Huang, Fang Liu, Justin P. Freedman, Lisa M. Porter,Robert F. Davis, Jonathan A. Malen
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Surface-enhanced Raman scattering of SnO2 bulk material and colloidal solutions
Enza Fazio, Fortunato Neri, Salvatore Savasta, Salvatore Spadaro, and Sebastiano Trusso
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 14 May 2012
Modeling charge transfer at organic donor-acceptor semiconductor interfaces
Deniz Çakir, Menno Bokdam, Michel P. de Jong, Mats Fahlman, Geert Brocks
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Molecular orientation and anisotropic carrier mobility in poorly soluble polythiophene thin films
Yuki Hosokawa, Masahiro Misaki, Satoshi Yamamoto, Masafumi Torii, Kenji Ishida, Yasukiyo Ueda
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Trace analysis of non-basal plane misfit stress relaxation in (20math1) and (30mathmath) semipolar InGaN/GaN heterostructures
Matthew T. Hardy, Po Shan Hsu, Feng Wu, Ingrid L. Koslow, Erin C. Young, Shuji Nakamura, Alexey E. Romanov, Steven P. DenBaars, and James S. Speck Matthew T. Hardy
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Magnitude-tunable sub-THz shear phonons in a non-polar GaN multiple-quantum-well p-i-n diode
Chien-Cheng Chen, Huei-Min Huang, Tien-Chang Lu, Hao-Chung Kuo, Chi-Kuang Sun
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
All-electric qubit control in heavy hole quantum dots via non-Abelian geometric phases
J. C. Budich, D. G. Rothe, E. M. Hankiewicz, and B. Trauzettel
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 14 May 2012
Manipulation of a single electron spin in a quantum dot without magnetic field
S. Bednarek, J. Pawłowski, A. Skubis
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Yuji Zhao, Qimin Yan, Chia-Yen Huang, Shih-Chieh Huang, Po Shan Hsu, Shinichi Tanaka, Chih-Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Daniel Feezell
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Absorption efficiency of gold nanorods determined by quantum dot fluorescence thermometry
L. M. Maestro, P. Haro-González, J. G. Coello, and D. Jaque . M. Maestro, P. Haro-González, J. G. Coello, and D. Jaque
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures
Piyas Samanta, Heng-Sheng Huang, Shuang-Yuan Chen, Tsung-Jian Tzeng, Mu-Chun Wang
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Visibility of TiO2(110)(1×1) bridging oxygen in core level photoelectron spectroscopy
F. Allegretti, J. P. W. Treacy, and R. Lindsay
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 14 May 2012
Tunable Kondo-Mott physics in bulk Bi2Te2Se topological insulator
L. Craco and S. Leoni
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 11 May 2012
Microscopic Origin of Universal Quasilinear Band Structures of Transparent Conducting Oxides
Youngho Kang, Sang Ho Jeon, Young-Woo Son, Young-Su Lee, Myungkwan Ryu, Sangyoon Lee, and Seungwu Han
Phys. Rev. Lett., Vol: 108, No: 19 , published: 11 May 2012
Vertical Cavity Surface Emitting Terahertz Laser
A. V. Kavokin, I. A. Shelykh, T. Taylor, and M. M. Glazov
Phys. Rev. Lett., Vol: 108, No: 19 , published: 11 May 2012
Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge
Wayne M. Witzel, Rajib Rahman, and Malcolm S. Carroll
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 11 May 2012
Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots
A. M. See, I. Pilgrim, B. C. Scannell, R. D. Montgomery, O. Klochan, A. M. Burke, M. Aagesen, P. E. Lindelof, I. Farrer, D. A. Ritchie, R. P. Taylor, A. R. Hamilton, and A. P. Micolich
Phys. Rev. Lett., Vol: 108, No: 19 , published: 11 May 2012
Electrical Control of Interdot Electron Tunneling in a Double InGaAs Quantum-Dot Nanostructure
K. Müller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. J. Krenner, G. Abstreiter, A. W. Holleitner, J. M. Villas-Boas, M. Betz, and J. J. Finley
Phys. Rev. Lett., Vol: 108, No: 19 , published: 11 May 2012
Dynamic Nuclear Spin Polarization in the Resonant Laser Excitation of an InGaAs Quantum Dot
A. Högele, M. Kroner, C. Latta, M. Claassen, I. Carusotto, C. Bulutay, and A. Imamoglu
Phys. Rev. Lett., Vol: 108, No: 19 , published: 11 May 2012
Effect of size and shape dispersion on the averaged magnetic response of ensembles of semiconductor quantum rings
L. M. Thu, W. T. Chiu, and O. Voskoboynikov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 11 May 2012
Giant photoinduced Faraday rotation due to the spin-polarized electron gas in an n-GaAs microcavity
R. Giri, S. Cronenberger, M. Vladimirova, D. Scalbert, K. V. Kavokin, M. M. Glazov, M. Nawrocki, A. Lemaître, and J. Bloch
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 10 May 2012
Comparison of simulations to experiment for a detailed analysis of space-charge-limited transient current measurements in organic semiconductors
Marek Z. Szymanski, Irena Kulszewicz-Bajer, Jérôme Faure-Vincent, and David Djurado
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 10 May 2012
Temporal first- and second-order correlations in a polariton condensate
H. Haug, T. D. Doan, H. Thien Cao, and D. B. Tran Thoai
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 10 May 2012
Transport through side-coupled double quantum dots: From weak to strong interdot coupling
D. Y. Baines, T. Meunier, D. Mailly, A. D. Wieck, C. Bäuerle, L. Saminadayar, Pablo S. Cornaglia, Gonzalo Usaj, C. A. Balseiro, and D. Feinberg
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 10 May 2012
Electron-nuclei spin dynamics in II-VI semiconductor quantum dots
C. Le Gall, A. Brunetti, H. Boukari, and L. Besombes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 10 May 2012
Strain tuning of topological band order in cubic semiconductors
Wanxiang Feng, Wenguang Zhu, Hanno H. Weitering, G. Malcolm Stocks, Yugui Yao, and Di Xiao
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 09 May 2012
A honeycomb lattice model simulating the surface states of topological insulators
Zhong Xu, Yunyou Yang, L. Sheng and D. Y. Xing
J. Phys.: Condens. Matter. , Vol: 24, No: 18 , published: 09 May 2012
Magnetotransport properties of a magnetically modulated two-dimensional electron gas with the spin–orbit interaction
S.K. Firoz Islam and Tarun Kanti Ghos
J. Phys.: Condens. Matter. , Vol: 24, No: 18 , published: 09 May 2012
Spin splitting of electron states in (110) quantum wells: Symmetry analysis and k·p theory versus microscopic calculations
M. O. Nestoklon, S. A. Tarasenko, J.-M. Jancu, and P. Voisin
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 09 May 2012
Zitterbewegung of electrons in quantum wells and dots in the presence of an in-plane magnetic field
Tutul Biswas and Tarun Kanti Ghosh
J. Phys.: Condens. Matter. , Vol: 24, No: 18 , published: 09 May 2012
Carrier dynamics in type-II GaAsSb/GaAs quantum well
M. Baranowski, M. Syperek, R. Kudrawiec, J. Misiewicz, J. A. Gupta, X. Wu and R. Wang
J. Phys.: Condens. Matter. , Vol: 24, No: 18 , published: 09 May 2012
Spin-channel Keldysh field theory for weakly interacting quantum dots
Sergey Smirnov and Milena Grifoni
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 09 May 2012
Spin relaxation in CdTe quantum dots with a single Mn atom
Marko D. Petrović and Nenad Vukmirović
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 09 May 2012
Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3
Peng Wei, Zhiyong Wang, Xinfei Liu, Vivek Aji, and Jing Shi
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 09 May 2012
Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
James T. Teherani, Winston Chern, Dimitri A. Antoniadis, Judy L. Hoyt, Liliana Ruiz, Christian D. Poweleit, and José Menéndez
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 09 May 2012
Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors
Devki N. Talwar, Zhe Chuan Feng, and Tzuen-Rong Yang
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 08 May 2012
Cadmium vacancy passivated by two hydrogen atoms in CdSe
D. Bastin, E. V. Lavrov, and J. Weber
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 08 May 2012
Structure and dynamics of pentacene on SiO2: From monolayer to bulk structure
Aldo Brillante, Ivano Bilotti, Raffaele Guido Della Valle, Elisabetta Venuti, Alberto Girlando, Matteo Masino, Fabiola Liscio, Silvia Milita, Cristiano Albonetti, Pasquale D'angelo, Arian Shehu, and Fabio Biscarini
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 08 May 2012
Optical phonon lifetimes in sputtered AlN thin films
P. Pobedinskas, B. Ruttens, J. D’Haen, K. Haenen
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Dynamical Fano resonance of an exciton in laser-driven semiconductor superlattices
Nobuya Maeshima and Ken-ichi Hino
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 07 May 2012
Spin-polarization of VGaON center in GaN and its application in spin qubit
Xiaopeng Wang, Mingwen Zhao, Zhenhai Wang, Xiujie He, Yan Xi, Shishen Yan
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Electronic and atomic structures of a 3×3 surface formed by a binary Sn/Ag overlayer on the Ge(111)c(2×8) surface: ARPES, LEED, and STM studies
Hafiz M. Sohail, J. R. Osiecki, and R. I. G. Uhrberg
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 07 May 2012
Experimental determination of the Lorenz number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12
K. C. Lukas, W. S. Liu, G. Joshi, M. Zebarjadi, M. S. Dresselhaus, Z. F. Ren, G. Chen, and C. P. Opeil
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 07 May 2012
Lattice thermal conductivity diminution and high thermoelectric power factor retention in nanoporous macroassemblies of sulfur-doped bismuth telluride nanocrystals
Yanliang Zhang, Rutvik J. Mehta, Matthew Belley, Liang Han, Ganpati Ramanath, Theodorian Borca-Tasciuc
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Anomalous enhancement of the thermoelectric figure of merit by V co-doping of Nb-SrTiO3
K. Ozdogan, M. Upadhyay Kahaly, H. N. Alshareef, U. Schwingenschlögl
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Douglas L. Irving, Zlatko Sitar
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Raman analysis of monoclinic Cu2SnS3 thin films
Dominik M. Berg, Rabie Djemour, Levent Gütay, Susanne Siebentritt, Phillip J. Dale, Xavier Fontane, Victor Izquierdo-Roca, Alejandro Pérez-Rodriguez
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Losses from long-living photoelectrons in terahertz-generating continuous-wave photomixers
E. A. Michael, M. Mikulics
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Optically induced charge conversion of coexistent free and bound excitonic complexes in two-beam magnetophotoluminescence of two-dimensional quantum structures
J. Jadczak, L. Bryja, A. Wójs, and M. Potemski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 07 May 2012
Impact of dark superpositions on the relaxation dynamics of an optically driven phonon-coupled exciton-biexciton quantum-dot system
M. Glässl, M. D. Croitoru, A. Vagov, V. M. Axt, and T. Kuhn
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 07 May 2012
Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor
D. W. Cardwell, A. R. Arehart, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure
S. Sengupta, J. O. Kim, A. V. Barve, S. Adhikary, Y. D. Sharma, N. Gautam, S. J. Lee, S. K. Noh, S. Chakrabarti, S. Krishna
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Spin-polarized two-dimensional electron gas in undoped MgxZn1−xO/ZnO heterostructures
K. Han, N. Tang, J. D. Ye, J. X. Duan, Y. C. Liu, K. L. Teo, B. Shen
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B
F. Herzog, M. Bichler, G. Koblmüller, S. Prabhu-Gaunkar, W. Zhou, M. Grayson
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain
Andrew Copple, Nathaniel Ralston, Xihong Peng
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors
D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain
SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Enhanced THz emission from c-plane InxGa1−xN due to piezoelectric field-induced electron transport
Nathaniel Woodward, C. Gallinat, L. E. Rodak, G. D. Metcalfe, H. Shen, M. Wraback
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
S. H. Park, J. Park, D.-J. You, K. Joo, D. Moon, J. Jang, D.-U. Kim, H. Chang, S. Moon, Y.-K. Song, G.-D. Lee, H. Jeon, J. Xu, Y. Nanishi, E. Yoon
Appl. Phys. Lett. , Vol: 100, No: 19 , published: 07 May 2012
Strong excitons in novel two-dimensional crystals: Silicane and germanane
O. Pulci, P. Gori, M. Marsili, V. Garbuio, R. Del Sole and F. Bechstedt
Europhys. Lett. , Vol: 98, No: 3 , published: 05 May 2012
Repulsive polarons in two-dimensional Fermi gases
Vudtiwat Ngampruetikorn, Jesper Levinsen and Meera M. Parish
Europhys. Lett. , Vol: 98, No: 3 , published: 05 May 2012
Band-gap engineering in TiO2-based ternary oxides
J. A. McLeod, R. J. Green, E. Z. Kurmaev, N. Kumada, A. A. Belik, and A. Moewes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 04 May 2012
Perfect coupling of light to surface plasmons by coherent absorption
Heeso Noh, Yidong Chong, A. Douglas Stone, and Hui Cao
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Determined from Surface-Phonon Dispersion Measurements
Xuetao Zhu, L. Santos, C. Howard, R. Sankar, F. C. Chou, C. Chamon, and M. El-Batanouny
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Hopping Magnetotransport via Nonzero Orbital Momentum States and Organic Magnetoresistance
Alexandre S. Alexandrov, Valentin A. Dediu, and Victor V. Kabanov
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Temperature-Dependent Magnetotransport around ν=1/2 in ZnO Heterostructures
D. Maryenko, J. Falson, Y. Kozuka, A. Tsukazaki, M. Onoda, H. Aoki, and M. Kawasaki
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Probing the Topological Exciton Condensate via Coulomb Drag
M. P. Mink, H. T. C. Stoof, R. A. Duine, Marco Polini, and G. Vignale
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Reentrant topological phases in Mn-doped HgTe quantum wells
W. Beugeling, C. X. Liu, E. G. Novik, L. W. Molenkamp, and C. Morais Smith
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 04 May 2012
Hyperfine interaction mediated exciton spin relaxation in (In,Ga)As quantum dots
H. Kurtze, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 04 May 2012
Effects of charged defects on the electronic and optical properties of self-assembled quantum dots
Ranber Singh and Gabriel Bester
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 04 May 2012
Intrinsic Spin Fluctuations Reveal the Dynamical Response Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum Dots
Yan Li, N. Sinitsyn, D. L. Smith, D. Reuter, A. D. Wieck, D. R. Yakovlev, M. Bayer, and S. A. Crooker
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Persistent Narrowing of Nuclear-Spin Fluctuations in InAs Quantum Dots Using Laser Excitation
Bo Sun, Colin Ming Earn Chow, Duncan G. Steel, Allan S. Bracker, Daniel Gammon, and L. J. Sham
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy
Z.-H. Pan, A. V. Fedorov, D. Gardner, Y. S. Lee, S. Chu, and T. Valla
Phys. Rev. Lett., Vol: 108, No: 18 , published: 04 May 2012
Bond angles for O-H defects in SnO2 from polarization properties of their vibrational modes
Figen Bekisli, W. Beall Fowler, Michael Stavola, Lynn A. Boatner, Erik Spahr, and Gunter Lüpke
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 03 May 2012
Thermopower of quantum Hall states in Corbino geometry as a measure of quasiparticle entropy
Yafis Barlas and Kun Yang
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 03 May 2012
Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
Tawinan Cheiwchanchamnangij and Walter R. L. Lambrecht
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 02 May 2012
Effect of atomic impurities on the helical surface states of the topological insulator Bi2Te3
Kyung-Hwan Jin and Seung-Hoon Jhi
J. Phys.: Condens. Matter. , Vol: 24, No: 17 , published: 02 May 2012
Electronic and optical properties of Cu, CuO and Cu2O studied by electron spectroscopy
Dahlang Tahir and Sven Tougaard
J. Phys.: Condens. Matter. , Vol: 24, No: 17 , published: 02 May 2012
AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties
C. Merschjann, M. Mews, T. Mete, A. Karkatzinou, M. Rusu, B. V. Korzun, S. Schorr, P. Schubert-Bischoff, S. Seeger, Th. Schedel-Niedrig and M.-Ch. Lux-Steiner
J. Phys.: Condens. Matter. , Vol: 24, No: 17 , published: 02 May 2012
Local magnetic characterization of (Ga,Mn)As continuous thin film using scanning probe force microscopy
Inhee Lee, Yuri Obukhov, Jongjoo Kim, Xia Li, Nitin Samarth, Denis V. Pelekhov, and P. Chris Hammel
Phys. Rev. B: Condens. Matter, Vol: 85, No: 18 , published: 02 May 2012
Ab initio modeling of the structural, electronic, and optical properties of AIIBIVC2V semiconductors
V. L. Shaposhnikov, A. V. Krivosheeva, V. E. Borisenko, J.-L. Lazzari, and F. Arnaud d’Avitaya
Phys. Rev. B: Condens. Matter, Vol: 85, No: 20 , published: 01 May 2012
Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics
Y. Chalopin, K. Esfarjani, A. Henry, S. Volz, and G. Chen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 01 May 2012
Phonon-mediated coupling between quantum dots through an off-resonant microcavity
Arka Majumdar, Michal Bajcsy, Armand Rundquist, Erik Kim, and Jelena Vučković
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 01 May 2012
Excitation energy dependence of the exciton inner ring
Y. Y. Kuznetsova, J. R. Leonard, L. V. Butov, J. Wilkes, E. A. Muljarov, K. L. Campman, and A. C. Gossard
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 30 April 2012
Multistability of cavity exciton polaritons affected by the thermally generated exciton reservoir
D. V. Vishnevsky, D. D. Solnyshkov, N. A. Gippius, and G. Malpuech
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 30 April 2012
Ag and N acceptors in ZnO: An ab initio study of acceptor pairing, doping efficiency, and the role of hydrogen
O. Volnianska, P. Boguslawski, and E. Kaminska
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 30 April 2012
Validity of the rigid band approximation in the study of the thermopower of narrow band gap semiconductors
Mal-Soon Lee and S. D. Mahanti
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 30 April 2012
Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
R. Kudrawiec, M. Gladysiewicz, L. Janicki, J. Misiewicz, G. Cywinski, C. Chèze, P. Wolny, P. Prystawko, C. Skierbiszewski
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
Ik-Soo Shin, Jung-Min Kim, Jun-Ho Jeun, Seok-Hyun Yoo, Ziyi Ge, Jong-In Hong, Jin Ho Bang, Yong-Sang Kim
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Electron transport in suspended semiconductor structures with two-dimensional electron gas
A. G. Pogosov, M. V. Budantsev, E. Yu. Zhdanov, D. A. Pokhabov, A. K. Bakarov, A. I. Toropov
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Fabrication of white light-emitting diodes based on solvothermally synthesized copper indium sulfide quantum dots as color converters
Woo-Seuk Song, Heesun Yang
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures
P. Renwick, H. Tang, J. Bai, T. Wang
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Coherent absorption and enhanced photoluminescence in thin layers of nanorods
G. Pirruccio, G. Lozano, Y. Zhang, S. R. K. Rodriguez, R. Gomes, Z. Hens, and Jaime Gómez Rivas
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 30 April 2012
Plasmon-enhanced mid-infrared luminescence from polar and lattice-structure-mismatched CdTe/PbTe single heterojunctions
Chunfeng Cai, Shuqiang Jin, Huizhen Wu, Bingpo Zhang, Lian Hu, P. J. McCann
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Thermal conductivity of ZnO thin film produced by reactive sputtering
Yibin Xu,Masahiro Goto,Ryozo Kato,Yoshihisa Tanaka,Yutaka Kagawa
J. Appl. Phys. , Vol: 111, No: 8 , published: 27 April 2012
The photoionization cross section of a hydrogenic impurity in a multi-layered spherical quantum dot
Mehmet Şahin,Firdes Tek,Ahmet Erdinç
J. Appl. Phys. , Vol: 111, No: 8 , published: 27 April 2012
Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
J. G. Keizer, P. M. Koenraad, P. Smereka, J. M. Ulloa, A. Guzman, and A. Hierro
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 27 April 2012
Hole-Doped Semiconductor Nanowire on Top of an s-Wave Superconductor: A New and Experimentally Accessible System for Majorana Fermions
Li Mao, Ming Gong, E. Dumitrescu, Sumanta Tewari, and Chuanwei Zhang
Phys. Rev. Lett., Vol: 108, No: 17 , published: 27 April 2012
Lyman spectra of holes bound to Cu, Ag, and Au acceptors in ZnTe and CdTe
Gang Chen, I. Miotkowski, and A. K. Ramdas
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 26 April 2012
Optical spin injection at semiconductor surfaces
Bernardo S. Mendoza and J. L. Cabellos
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 26 April 2012
Optical properties of cubic GaN from 1 to 20 eV
Martin Feneberg, Marcus Röppischer, Christoph Cobet, Norbert Esser, Jörg Schörmann, Thorsten Schupp, Donat J. As, Florian Hörich, Jürgen Bläsing, Alois Krost, and Rüdiger Goldhahn
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 26 April 2012
Magnetic field control of polarized polariton condensates in rectangular microcavity pillars
V. D. Kulakovskii, A. S. Brichkin, S. V. Novikov, C. Schneider, S. Höfling, M. Kamp, A. Forchel, and N. A. Gippius
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 26 April 2012
Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells
J.G. Zhu and S.L. Ban
Eur. Phys. J. B , Vol: 85, No: 4 , published: 26 April 2012
Coupling of intersubband transitions to zone-folded acoustic phonons in a GaN/AlN superlattice
Cynthia Aku-Leh, Klaus Reimann, Michael Woerner, Eva Monroy, and Daniel Hofstetter
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 26 April 2012
Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
R. Gargallo-Caballero,A. Guzmán,J. M. Ulloa,A. Hierro,M. Hopkinson,E. Luna,A. Trampert
J. Appl. Phys. , Vol: 111, No: 8 , published: 26 April 2012
g factors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots
J. van Bree, A. Yu. Silov, P. M. Koenraad, M. E. Flatté, and C. E. Pryor
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 26 April 2012
Dynamics of coherences in the interacting double-dot Aharonov-Bohm interferometer: Exact numerical simulations
Salil Bedkihal and Dvira Segal
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 26 April 2012
Fine-structure splitting in large-pitch pyramidal quantum dots
L. O. Mereni, O. Marquardt, G. Juska, V. Dimastrodonato, E. P. O’Reilly, and E. Pelucchi
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 26 April 2012
Self-trapped exciton state in Si nanocrystals revealed by induced absorption
W. D. A. M. de Boer, D. Timmerman, T. Gregorkiewicz, H. Zhang, W. J. Buma, A. N. Poddubny, A. A. Prokofiev, and I. N. Yassievich
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 25 April 2012
Defect energy levels and electronic behavior of Ni-, Co-, and As-doped synthetic pyrite (FeS2)
S. W. Lehner,N. Newman,M. van Schilfgaarde,S. Bandyopadhyay,K. Savage,P. R. Buseck
J. Appl. Phys. , Vol: 111, No: 8 , published: 25 April 2012
Nonequilibrium charge carriers and linear galvanomagnetic phenomena in semiconductors
S. Molina-Valdovinos,Yu. G. Gurevich
J. Appl. Phys. , Vol: 111, No: 8 , published: 25 April 2012
Measurements of quasiparticle tunneling in the υ=5/2 fractional quantum Hall state
X. Lin, C. Dillard, M. A. Kastner, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 25 April 2012
Diamagnetism and flux creep in bilayer exciton superfluids
P. R. Eastham, N. R. Cooper, and D. K. K. Lee
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 25 April 2012
Near-threshold properties of the electronic density of layered quantum dots
Alejandro Ferrón, Pablo Serra, and Omar Osenda
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 25 April 2012
Rectification in substituted atomic wires: a theoretical insight
Yoshihiro Asai
J. Phys.: Condens. Matter. , Vol: 24, No: 16 , published: 25 April 2012
Multiple excitation process in deep-ultraviolet emission from AlGdN thin films pumped by an electron beam
Shinya Iwahashi,Naohiro Kishi,Shinya Kitayama,Takashi Kita,Yoshitaka Chigi,Tetsuro Nishimoto,Hiroyuki Tanaka,Mikihiro Kobayashi,Tsuguo Ishihara,Hirokazu Izumi
J. Appl. Phys. , Vol: 111, No: 8 , published: 25 April 2012
Photoluminescence lineshape features of carbon δ-doped GaAs heterostructures
J. Schuster, T. Y. Kim, E. Batke, D. Reuter and A. D. Wieck
J. Phys.: Condens. Matter. , Vol: 24, No: 16 , published: 25 April 2012
Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
N. V. Baidus,M. I. Vasilevskiy,S. V. Khazanova,B. N. Zvonkov,H. P. van der Meulen,J. M. Calleja and L. Viña
Europhys. Lett. , Vol: 98, No: 2 , published: 24 April 2012
Pumping current of a Luttinger liquid with finite length
S. Franchino Viñas, P. Pisani and M. Salvay
Eur. Phys. J. B , Vol: 85, No: 4 , published: 24 April 2012
First-principles investigation of the alloy scattering potential in dilute Si1−xCx
M. P. Vaughan, F. Murphy-Armando, and S. Fahy
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 23 April 2012
High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap
X. Luo, Y. S. Oh, A. Sirenko, P. Gao, T. A. Tyson, K. Char, S.-W. Cheong
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Raman tensor elements of wurtzite ZnO
T. Sander, S. Eisermann, B. K. Meyer, and P. J. Klar
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 23 April 2012
Apparent Raman spectral shifts from nano-structured surfaces
V. Tishkova and W. S. Bacsa
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Magneto-optical properties of single site-controlled InGaAsN quantum wires grown on prepatterned GaAs substrates
Marco Felici, Giorgio Pettinari, Romain Carron, Giovanna Lavenuta, Elena Tartaglini, Antonio Polimeni, Dan Fekete, Pascal Gallo, Benjamin Dwir, Alok Rudra, Peter C. M. Christianen, Jan C. Maan, Mario Capizzi, and Eli Kapon
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 23 April 2012
Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity
Yanhua Zhang, Wenquan Ma, Yang Wei, Yulian Cao, Jianliang Huang, Kai Cui, Xiaolu Guo
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Photovoltaic properties of the p-CuO/n-Si heterojunction prepared through reactive magnetron sputtering
Fei Gao,Xiao-Jing Liu,Jun-Shan Zhang,Mei-Zhou Song,Ning Li
J. Appl. Phys. , Vol: 111, No: 8 , published: 23 April 2012
Excitonic insulator state in the two-orbital Hubbard model: Variational cluster approach
T. Kaneko, K. Seki, and Y. Ohta
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 23 April 2012
Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics
H. Chouaib, C. Bru-Chevallier
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
Libing Li, Jungwoo Joh, J. A. del Alamo, Carl V. Thompson
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Effect of magnetic field on polariton emission characteristics of a quantum-well microcavity diode
Pallab Bhattacharya, Ayan Das, Sishir Bhowmick, Marc Jankowski, Chi-sen Lee
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Dimensional transition and carrier dynamics in CdxZn1−xTe/ZnTe nanostructures on Si substrates
K.-D. Park, S.-Y. Yim, H. S. Lee
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Strain-induced composition limitation in nitrogen δ-doped (In,Ga)As/GaAs quantum wells
R. Gargallo-Caballero, E. Luna, F. Ishikawa, A. Trampert
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
The contribution of quantum confinement to optical anisotropy of a-plane Cd0.06Zn0.94O/ZnO quantum wells
Hiroaki Matsui and Hitoshi Tabata

Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Scaling thermodynamic model for the self-induced nucleation of GaN nanowires
Vladimir G. Dubrovskii, Vincent Consonni, Achim Trampert, Lutz Geelhaar, and Henning Riechert
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 23 April 2012
Symmetrically tunable optical properties of InGaN/GaN multiple quantum disks by an external stress
H. Y. Shih, Y. F. Chen, T. Y. Lin
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency
E. J. D. Klem, C. W. Gregory, G. B. Cunningham, S. Hall, D. S. Temple, J. S. Lewis
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Identification of visible emission from ZnO quantum dots: Excitation-dependence and size-dependence
Xiaoyong Xu,Chunxiang Xu,Zengliang Shi,Chi Yang,Bin Yu,Jingguo Hu
J. Appl. Phys. , Vol: 111, No: 8 , published: 23 April 2012
Eu luminescence center created by Mg codoping in Eu-doped GaN
Dong-gun Lee, Atsushi Nishikawa, Yoshikazu Terai, Yasufumi Fujiwara
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Photoluminescence induced by twinning interface in CdS nanocrystals
P. Q. Zhao, S. J. Xiong, X. L. Wu, Paul K. Chu
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots
Jun He, Feng Bao, Jinping Zhang
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Surface photoluminescence and magnetism in hydrothermally grown undoped ZnO nanorod arrays
Xiaoyong Xu, Chunxiang Xu, Yi Lin, Tao Ding, Shengjiang Fang, Zengliang Shi, Weiwei Xia, Jingguo Hu
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, X. Liu
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
Igor Krylov, Lior Kornblum, Arkady Gavrilov, Dan Ritter, Moshe Eizenberg
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces
H. Wolf, J. Kronenberg, F. Wagner, M. Deicher, Th. Wichert, ISOLDE Collaboration
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors
Y. G. Xiao, Y. Xiong, M. H. Tang, J. C. Li, C. P. Cheng, B. Jiang, Z. H. Tang, X. S. Lv, H. Q. Cai, X. C. Gu, Y. C. Zhou
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance of n-Type Mg2Si1-xSnx Solid Solutions
Wei Liu, Xiaojian Tan, Kang Yin, Huijun Liu, Xinfeng Tang, Jing Shi, Qingjie Zhang, and Ctirad Uher
Phys. Rev. Lett., Vol: 108, No: 16 , published: 20 April 2012
Phonon-Assisted Optical Absorption in Silicon from First Principles
Jesse Noffsinger, Emmanouil Kioupakis, Chris G. Van de Walle, Steven G. Louie, and Marvin L. Cohen
Phys. Rev. Lett., Vol: 108, No: 16 , published: 20 April 2012
Photoconductive Detection of Tetrahedrally Coordinated Hydrogen in ZnO
S. G. Koch, E. V. Lavrov, and J. Weber
Phys. Rev. Lett., Vol: 108, No: 16 , published: 20 April 2012
Room-Temperature Polariton Parametric Scattering Driven by a One-Dimensional Polariton Condensate
Wei Xie, Hongxing Dong, Saifeng Zhang, Liaoxin Sun, Weihang Zhou, Yanjing Ling, Jian Lu, Xuechu Shen, and Zhanghai Chen
Phys. Rev. Lett., Vol: 108, No: 16 , published: 20 April 2012
Tunable Kondo Effect in a Double Quantum Dot Coupled to Ferromagnetic Contacts
Rok Žitko, Jong Soo Lim, Rosa López, Jan Martinek, and Pascal Simon
Phys. Rev. Lett., Vol: 108, No: 16 , published: 20 April 2012
Simulation of self-assembled compositional core-shell structures in InxGa1−xN nanowires
Xiaobin Niu, Gerald B. Stringfellow, Young-Ju Lee, and Feng Liu
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 20 April 2012
Effective spin-orbit interaction Hamiltonian for quasi-one-dimensional quantum rings
Kh. Shakouri, B. Szafran, M. Esmaeilzadeh, and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 20 April 2012
Polaron absorption for photovoltaic energy conversion in a manganite-titanate pn heterojunction
Gesine Saucke, Jonas Norpoth, Christian Jooss, Dong Su, and Yimei Zhu
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 20 April 2012
Photovoltaic infrared detection with p-type graded barrier heterostructures
P. K. D. D. P. Pitigala,S. G. Matsik,A. G. U. Perera,S. P. Khanna,L. H. Li,E. H. Linfield,Z. R. Wasilewski,M. Buchanan,H. C. Liu
J. Appl. Phys. , Vol: 111, No: 8 , published: 19 April 2012
Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress
Cheng-Yu Hu,Tamotsu Hashizume
J. Appl. Phys. , Vol: 111, No: 8 , published: 19 April 2012
Thermoelectric properties of Ba-Cu-Si clathrates
X. Yan, M. X. Chen, S. Laumann, E. Bauer, P. Rogl, R. Podloucky, and S. Paschen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 18 April 2012
Space charge effect in ultrathin ferroelectric films
Xiaoyan Lu,Wenwu Cao,Hui Li
J. Appl. Phys. , Vol: 111, No: 8 , published: 18 April 2012
Interplay between electron-phonon coupling and disorder strength on the transport properties of organic semiconductors
C. A. Perroni and V. Cataudella
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 18 April 2012
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
S. Hammersley,D. Watson-Parris,P. Dawson,M. J. Godfrey,T. J. Badcock,M. J. Kappers,C. McAleese,R. A. Oliver,C. J. Humphreys
J. Appl. Phys. , Vol: 111, No: 8 , published: 18 April 2012
Hole system heating by ultrafast interband energy transfer in optically excited Ge/SiGe quantum wells
K. Kolata, S. Imhof, N. S. Köster, S. Cecchi, D. Chrastina, G. Isella, J. E. Sipe, A. Thränhardt, and S. Chatterjee
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 18 April 2012
Spin pumping and spin filtering in double quantum dots with time-dependent spin-orbit interactions
Hui Pan,Yinghui Zhao
J. Appl. Phys. , Vol: 111, No: 8 , published: 18 April 2012
Shape of polygonal quantum dots and ground-state instability in the spin polarization
Masamu Ishizuki, Hannyo Takemiya, Takuma Okunishi, Kyozaburo Takeda, and Kouichi Kusakabe
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 18 April 2012
Triple quantum dots as charge rectifiers
M Busl and G Platero
J. Phys.: Condens. Matter. , Vol: 24, No: 15 , published: 18 April 2012
Cotunneling current through a two-level quantum dot coupled to magnetic leads: the role of exchange interaction
A.U. Sharafutdinov and I. S. Burmistrov
J. Phys.: Condens. Matter. , Vol: 24, No: 15 , published: 18 April 2012
Calculation of the lattice dynamics and Raman spectra of copper zinc tin chalcogenides and comparison to experiments
Ankur Khare,Burak Himmetoglu,Melissa Johnson,David J. Norris,Matteo Cococcioni,Eray S. Aydil
J. Appl. Phys. , Vol: 111, No: 8 , published: 17 April 2012
Electron correlation and many-body effects at interfaces on semiconducting substrates
Antonio Tejeda, Y. Fagot-Révurat, R. Cortés, D. Malterre, E. G. Michel and A. Mascaraque
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Theoretical studies of the influence of structural inhomogeneities on the radiative recombination time in polar InGaN quantum wells
Marta Gladysiewicz and Robert Kudrawiec
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Evidence for fractional filling in ultrathin GaInN/GaN multiple-quantum wells
Nacir Tit
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Optically controlled spin-dependent Andreev reflection and spin accumulation in a quantum dot
Hui Pan,Rong Lü
J. Appl. Phys. , Vol: 111, No: 8 , published: 17 April 2012
Effect of nitrogen impurities on the physical properties of ZnO nanowires: First-principles study
Slimane Haffad, Madani Samah, and Giancarlo Cicero
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 17 April 2012
Structural and elastic properties of InN nanowires
Ehtesham B. Quddus, Alina Wilson, Jie Liu, Zhihua Cai, Deepak Veereddy, Xinyong Tao, Xiaodong Li, Richard A. Webb and Goutam Koley
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Influence of shape of GaN/AlN quantum dots on luminescence decay law
I. A. Aleksandrov, A. K. Gutakovskii and K. S. Zhuravlev
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Luminescence quenching of porous silicon nanoparticles in presence of ascorbic acid
Vera La Ferrara, Giuseppe Fiorentino, Gabriella Rametta and Girolamo Di Francia
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Affect of film thickness on the blue photoluminescence from ZnO
J. C. Moore, L. R. Covington and R. Stansell
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Photoluminescence from SiOx layers containing amorphous silicon nanoparticles
D. Nesheva
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals
Katsushi Fujii, Takenari Goto and Takafumi Yao
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Anticrossing of axial and planar surface-related phonon modes in Raman spectra of self-assembled GaN nanowires
J. Wang, F. Demangeot, R. Péchou, A. Ponchet, A. Cros, and B. Daudin
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 16 April 2012
Surface electronic structure of Bi2Te3(111) studied by high-resolution photoelectron spectroscopy using synchrotron radiation
Koji Ogawa, Junpei Azuma, Kazutoshi Takahashi, Masao Kamada, Minoru Sasaki, Akimasa Ohnishi, Mamoru Kitaura, and Heon-Jung Kim
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 16 April 2012
Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors
Ting-Kuo Kang
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Seebeck coefficient of a quantum confined, high-electron-density electron gas in SrTiO3
Tyler A. Cain, SungBin Lee, Pouya Moetakef, Leon Balents, Susanne Stemmer, S. James Allen
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films
A. I. Abutaha, S. R. Sarath Kumar, H. N. Alshareef
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
Guan-Bo Lin, David Meyaard, Jaehee Cho, E. Fred Schubert, Hyunwook Shim, Cheolsoo Sone
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition
Joseph E. Brom, Yue Ke, Renzhong Du, Dongjin Won, Xiaojun Weng, Kalissa Andre, Jarod C. Gagnon, Suzanne E. Mohney, Qi Li, Ke Chen, X. X. Xi, Joan M. Redwing
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Complete parameterization of the dielectric function of microcrystalline silicon fabricated by plasma-enhanced chemical vapor deposition
Tetsuya Yuguchi,Yosuke Kanie,Nobuyuki Matsuki,Hiroyuki Fujiwara
J. Appl. Phys. , Vol: 111, No: 8 , published: 16 April 2012
First-principles study of temperature-dependent optical properties of semiconductors from ultraviolet to infrared regions
J. Liu,L. H. Liu<
J. Appl. Phys. , Vol: 111, No: 8 , published: 16 April 2012
Magnetoexcitons and optical absorption of bilayer-structured topological insulators
Zhigang Wang, Zhen-Guo Fu, Ping Zhang
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy
Jung Gon Kim, Yasuhito Kamei, Atsuhito Kimura, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yu Huai Liu and Takashi Matsuoka
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Quadratic electro-optic effect in GaN-based materials
P. Chen, D. G. Zhao, Y. H. Zuo, D. S. Jiang, Z. S. Liu, Q. M. Wang
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Spatially modulated photoluminescence properties in dynamically strained GaAs/AlAs quantum wells by surface acoustic wave
Tetsuomi Sogawa, Haruki Sanada, Hideki Gotoh, Hiroshi Yamaguchi, Paulo V. Santos
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Mid-wave infrared HgCdTe nBn photodetector
Anne M. Itsuno, Jamie D. Phillips, Silviu Velicu
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Unusual photoresponse of indium doped ZnO/organic thin film heterojunction
Sesha Vempati, Saraswathi Chirakkara, J. Mitra, Paul Dawson, Karuna Kar Nanda, S. B. Krupanidhi
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
Yan-Ling Hu, Robert M. Farrell, Carl J. Neufeld, Michael Iza, Samantha C. Cruz,Nathan Pfaff, Dobri Simeonov, Stacia Keller, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, James S. Speck
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Strong coupling in monolithic microcavities with ZnSe quantum wells
K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, C. Kruse
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells
Guipeng Liu, Ju Wu, Yanwu Lu, Guijuan Zhao, Chengyan Gu, Changbo Liu, Ling Sang, Shaoyan Yang, Xianglin Liu, Qinsheng Zhu, Zhanguo Wang
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Semipolar {nmath01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique
Mitsuru Funato, Teruhisa Kotani, Takeshi Kondou, Yoichi Kawakami
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Out-of-plane equilibrium spin current in a quasi-two-dimensional electron gas under in-plane magnetic field
E. Nakhmedov and O. Alekperov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 16 April 2012
A core/shell mechanism for stacking-fault generation in GaAs nanowires
Zaoshi Yuan, Ken-ichi Nomura, Aiichiro Nakano
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Electrothermal phenomena in zinc oxide nanowires and contacts
Saniya LeBlanc, Sujay Phadke, Takashi Kodama, Alberto Salleo, Kenneth E. Goodson
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Critical dimensions of highly lattice mismatched semiconductor nanowires grown in strain-releasing configurations
Suzana Sburlan, P. Daniel Dapkus, Aiichiro Nakano
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Electrically controllable energy gaps in graphene quantum dots
Wen-Long Ma, Shu-Shen Li
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Dynamic nanomechanics of zinc oxide nanowires
Lifen Wang, Xuezeng Tian, Shize Yang, Zhi Xu, Wenlong Wang, Xuedong Bai
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Internal structure of tunable ternary CdSexS1−x quantum dots unraveled by x-ray absorption spectroscopy
Liang-Yih Chen, Po-An Yang, Chia-Hong Tseng, Bing-Joe Hwang, Ching-Hsiang Chen
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
The electronic properties of a core/shell/well/shell spherical quantum dot with and without a hydrogenic impurity
Hatice Taş,Mehmet Şahin
J. Appl. Phys. , Vol: 111, No: 8 , published: 16 April 2012
Hyperfine induced electron spin and entanglement dynamics in double quantum dots: The case of separate baths
B.  Erbe and J.  Schliemann
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 16 April 2012
Controlling quantum dot emission by integration of semiconductor nanomembranes onto piezoelectric actuators
A. Rastelli, F. Ding, J. D. Plumhof, S. Kumar, R. Trotta, Ch. Deneke, A. Malachias, P. Atkinson, E. Zallo, T. Zander, A. Herklotz, R. Singh, V. Křápek, J. R. Schröter, S. Kiravittaya, M. Benyoucef, R. Hafenbrak, K. D. Jöns, D. J. Thurmer, D. Grimm, G. Bester, K. Dörr, P. Michler and O. G. Schmidt
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Quantum state tomography measurements on strain-tuned InxGa1−xAs/GaAs quantum dots
K. D. Jöns, R. Hafenbrak, P. Atkinson, A. Rastelli, O. G. Schmidt and P. Michler
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Epitaxial growth of lateral quantum dot molecules
Eugenio Zallo, Paola Atkinson, Lijuan Wang, Armando Rastelli and Oliver G. Schmidt
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Growth and spectroscopy of single lateral InGaAs/GaAs quantum dot molecules
Matthias Heldmaier, Claus Hermannstädter, Marcus Witzany, Lijuan Wang, Jie Peng, Armando Rastelli, Gabriel Bester, Oliver G. Schmidt and Peter Michler
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Ultrafast coherent spectroscopy of a single self-assembled quantum dot
Christian Wolpert, Christian Dicken, Lijuan Wang, Paola Atkinson, Armando Rastelli, Oliver G. Schmidt, Harald Giessen and Markus Lippitz
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Transient absorption spectroscopy of a single lateral InGaAs quantum dot molecule
Christian Wolpert, Lijuan Wang, Armando Rastelli, Oliver G. Schmidt, Harald Giessen and Markus Lippitz
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Vertically stacked and laterally ordered InP and In(Ga)As quantum dots for quantum gate applications
Elisabeth Koroknay, Wolfgang-Michael Schulz, Daniel Richter, Ulrich Rengstl, Matthias Reischle, Moritz Bommer, Christian Alexander Kessler, Robert Roßbach, Heinz Schweizer, Michael Jetter and Peter Michler
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Optical investigations on single vertically coupled InP/GaInP quantum dot pairs
Christian A. Kessler, Matthias Reischle, Robert Roßbach, Elisabeth Koroknay, Michael Jetter, Heinz Schweizer and Peter Michler
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Recent developments in Ge dots grown on pit-patterned surfaces
Alim Karmous, Inga A. Fischer, Olaf Kirfel, Johannes Mattes, Michael Oehme, Jens Werner and Jörg Schulze
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy
Marius Millot, Zachary M. Geballe, Kin M. Yu, Wladek Walukiewicz, Raymond Jeanloz
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Electroluminescence properties of organic nanostructures studied by scanning tunnelling microscopy
Klaus Kuhnke, Alexander Kabakchiev, Theresa Lutz and Klaus Kern
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
A. V. Sachenko,A. E. Belyaev,N. S. Boltovets,R. V. Konakova,Ya. Ya. Kudryk,S. V. Novitskii,V. N. Sheremet,S. A. Vitusevich
J. Appl. Phys. , Vol: 111, No: 8 , published: 16 April 2012
Towards electrical detection of plasmons in all-silicon pin-diodes
Inga A. Fischer, Jyh-Lih Wu, Ralf Vogelgesang and Jörg Schulze
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Structural and electronic properties of type-I and type-VIII Ba8Ga16Sn30 clathrates under compression
Pages 1238-1243
Physica B, Vol: 407, No: 8 , published: 15 April 2012
First-principles calculations of the structural, electronic and optical properties of cubic BxGa1−xAs alloys
Pages 1292-1300
Physica B, Vol: 407, No: 8 , published: 15 April 2012
A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N–Zn co-doped β-Ga2O3
Pages 1227-1231
Physica B, Vol: 407, No: 8 , published: 15 April 2012
Simultaneous effects of temperature and pressure on diamagnetic susceptibility of a shallow donor in a quantum antidot
Pages 1301-1305
Physica B, Vol: 407, No: 8 , published: 15 April 2012
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
John L. Lyons, Anderson Janotti, and Chris G. Van de Walle
Phys. Rev. Lett., Vol: 108, No: 15 , published: 13 April 2012
Optical Spin Injection and Spin Lifetime in Ge Heterostructures
F. Pezzoli, F. Bottegoni, D. Trivedi, F. Ciccacci, A. Giorgioni, P. Li, S. Cecchi, E. Grilli, Y. Song, M. Guzzi, H. Dery, and G. Isella
Phys. Rev. Lett., Vol: 108, No: 15 , published: 13 April 2012
Nanotransformation and Current Fluctuations in Exciton Condensate Junctions
H. Soller, F. Dolcini, and A. Komnik
Phys. Rev. Lett., Vol: 108, No: 15 , published: 13 April 2012
Room-Temperature Laser Emission of ZnO Nanowires Explained by Many-Body Theory
Marijn A. M. Versteegh, Daniël Vanmaekelbergh, and Jaap I. Dijkhuis
Phys. Rev. Lett., Vol: 108, No: 15 , published: 13 April 2012
Strong enhancement of Rashba spin-orbit coupling with increasing anisotropy in the Fock-Darwin states of a quantum dot
Siranush Avetisyan, Pekka Pietiläinen, and Tapash Chakraborty
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 13 April 2012
Crossover between two different Kondo couplings in side-coupled double quantum dots
Yoichi Tanaka, Norio Kawakami, and Akira Oguri
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 13 April 2012
Direct observation of nuclear field fluctuations in single quantum dots
R. Kaji, S. Adachi, H. Sasakura, and S. Muto
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 13 April 2012
Designing Electrical Contacts to MoS2 Monolayers: A Computational Study
Igor Popov, Gotthard Seifert, and David Tománek
Phys. Rev. Lett., Vol: 108, No: 15 , published: 13 April 2012
Fundamental temperature-dependent properties of the Si nanocrystal band gap
A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 12 April 2012
Cyclotron-resonant exciton transfer between the nearly free and strongly localized radiative states of a two-dimensional hole gas in a high magnetic field
L. Bryja, J. Jadczak, A. Wójs, G. Bartsch, D. R. Yakovlev, M. Bayer, P. Plochocka, M. Potemski, D. Reuter, and A. D. Wieck
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 12 April 2012
Polariton states bound to defects in GaAs/AlAs planar microcavities
Joanna M. Zajac, Wolfgang Langbein, Maxime Hugues, and Mark Hopkinson
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 12 April 2012
Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies
Unhi Honda, Yujiro Yamada, Yutaka Tokuda, and Kenji Shiojima
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Pseudospin transfer torques in semiconductor electron bilayers
Youngseok Kim, A. H. MacDonald, and Matthew J. Gilbert
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 12 April 2012
Nonlinear electron transport in an electron-hole plasma
P. Bowlan, W. Kuehn, K. Reimann, M. Woerner, T. Elsaesser, R. Hey, and C. Flytzanis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 12 April 2012
Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy
Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, and Atsushi Ogura
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Analysis of Phase Matching Conditions for Generating Second Harmonic in ZnO Channel Waveguides
Yuta Taira, Tomohiro Kita, Edgar Yoshio Morales Teraoka, and Hirohito Yamada
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation
Katsuya Oda, Kazuki Tani, Shin-ichi Saito, Tadashi Okumura, and Tatemi Ido
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer
Chin-Hsiang Chen, Chia-Ming Tsai, Chung-Fu Cheng, Shuo-Fu Yen, Peng-Yin Su, Yu-Hsuan Tsai, and Cheng-Nan Tsai
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, and Jun Suda
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Exact solution for spin and charge correlations in quantum dots: Effect of level fluctuations and Zeeman splitting
I. S. Burmistrov, Yuval Gefen, and M. N. Kiselev
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 12 April 2012
Magnetic anisotropies of quantum dots doped with magnetic ions
Karel Výborný, J. E. Han, Rafał Oszwałdowski, Igor Žutić, and A. G. Petukhov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 12 April 2012
Quantitative description for the growth rate of self-induced GaN nanowires
V. Consonni, V. G. Dubrovskii, A. Trampert, L. Geelhaar, and H. Riechert
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 12 April 2012
Conductance beyond the Landauer limit and charge pumping in quantum wires
Jay D. Sau, Takuya Kitagawa, and Bertrand I. Halperin
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 12 April 2012
Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors
Takayuki Ishikawa, Masumi Saitoh, Kensuke Ota, Chika Tanaka, and Toshinori Numata
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, and Minoru Ida
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches
Hyuga Ueyama, Tomoya Takahashi, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, and Toshiro Isu
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 150 K
Sota Nakanishi, Kazutoshi Sasayama, Yoshitsugu Oyanagi, Ryo Yamaguchi, Shulong Lu, Lianhe Li, Andrea Fiore, and Atsushi Tackeuchi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method
Wiem Bousslama, Habib Elhouichet, Bernard Gelloz, Brigitte Sieber, Ahmed Addad, Myriam Moreau, Mokhtar Férid, and Nobuyoshi Koshida
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density
Katsunori Makihara, Hidenori Deki, Mitsuhisa Ikeda, and Seiichi Miyazaki
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology
Sung Hwan Kim, Hyun Jun Bae, Chang Woo Oh, Dong-Won Kim, Satoru Yamada, Gyoyoung Jin, and Yonghan Roh
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Light Detection and Emission in Germanium-on-Insulator Diodes
Kazuki Tani, Shin-ichi Saito, Yong Lee, Katsuya Oda, Toshiyuki Mine, Toshiki Sugawara, and Tatemi Ido
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Qi Zhou, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation
Yoshiteru Amemiya, Ryuichi Furutani, Masataka Fukuyama, and Shin Yokoyama
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor
Youichi Ashida, Shigeki Takahashi, Satoshi Shiraki, Norihito Tokura, and Akio Nakagawa
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Dan Dan Zhao, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Guo An Cheng, and Akira Toriumi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties
Wei Feng, Ranga Hettiarachchi, Soshi Sato, Kuniyuki Kakushima, Masaaki Niwa, Hiroshi Iwai, Keisaku Yamada, and Kenji Ohmori
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit
Yiming Li and Hui-Wen Cheng
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
Hiroshi Kambayashi, Takehiko Nomura, Sadahiro Kato, Hirokazu Ueda, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
Ming-Hung Han, Hung-Bin Chen, Chia-Jung Chang, Jia-Jiun Wu, Wen-Chong Chen, Chi-Chong Tsai, and Chun-Yen Chang
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique
Yandong He and Ganggang Zhang
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Terahertz Radiation from a (113)B GaAs/AlAs Coupled Multilayer Cavity Generated by Ultrashort Laser Pulse Excitation
Sho Katoh, Toshikazu Takimoto, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, and Toshiro Isu
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Improved semiconductor lattice parameters and band gaps from a middle-range screened hybrid exchange functional
M. J. Lucero, T. M. Henderson and G. E. Scuseria
J. Phys.: Condens. Matter. , Vol: 24, No: 14 , published: 11 April 2012
Microwave-mediated heat transport in a quantum dot attached to leads
Feng Chi and Yonatan Dubi
J. Phys.: Condens. Matter. , Vol: 24, No: 14 , published: 11 April 2012
Distributed electrochemical capacitance evidenced in high-frequency admittance measurements on a quantum Hall device
Masayuki Hashisaka, Kazuhisa Washio, Hiroshi Kamata, Koji Muraki, and Toshimasa Fujisawa
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 11 April 2012
Performance analysis of an interacting quantum dot thermoelectric setup
Bhaskaran Muralidharan and Milena Grifoni
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 11 April 2012
Thermopower and conductance for a graphene p–n junction
Shu-Hui Lv, Shu-Bo Feng and Yu-Xian Li
J. Phys.: Condens. Matter. , Vol: 24, No: 14 , published: 11 April 2012
Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures
J. Beyer, P. H. Wang, I. A. Buyanova, S. Suraprapapich, C. W. Tu and W. M. Chen
J. Phys.: Condens. Matter. , Vol: 24, No: 14 , published: 11 April 2012
Rectification of terahertz radiation in semiconductor superlattices in the absence of domains
J. Isohätälä and K. N. Alekseev
J. Phys.: Condens. Matter. , Vol: 24, No: 14 , published: 11 April 2012
Fast preparation of a single-hole spin in an InAs/GaAs quantum dot in a Voigt-geometry magnetic field
T. M. Godden, J. H. Quilter, A. J. Ramsay, Yanwen Wu, P. Brereton, I. J. Luxmoore, J. Puebla, A. M. Fox, and M. S. Skolnick
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 11 April 2012
Quasiparticle effects in the bulk and surface-state bands of Bi2Se3 and Bi2Te3 topological insulators
Oleg V. Yazyev, Emmanouil Kioupakis, Joel E. Moore, and Steven G. Louie
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 10 April 2012
Microscopic mechanism of low thermal conductivity in lead telluride
Takuma Shiga, Junichiro Shiomi, Jie Ma, Olivier Delaire, Tomasz Radzynski, Andrzej Lusakowski, Keivan Esfarjani, and Gang Chen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 10 April 2012
Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer
Oliver Bierwagen, Soojeong Choi, and James S. Speck
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 09 April 2012
Electron Raman scattering of a two-dimensional pseudodot system
Pages 1657-1660
Phys. Lett. A, Vol: 376, No: 19 , published: 09 April 2012
Spectra of Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in GaAs/AlGaAs quantum wells and their behaviors under external strain
J. L. Yu, Y. H. Chen, Y. Liu, C. Y. Jiang, H. Ma, L. P. Zhu
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
Weijie Du, Mitsushi Suzuno, M. Ajmal Khan, Katsuaki Toh, Masakazu Baba, Kotaro Nakamura, Kaoru Toko, Noritaka Usami, Takashi Suemasu
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC
H. Jönen, H. Bremers, T. Langer, U. Rossow, A. Hangleiter
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
S. Pandey, D. Cavalcoli, B. Fraboni, A. Cavallini, T. Brazzini, F. Calle
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
In-plane interdot carrier transfer in InAs/GaAs quantum dots
J. Bhattacharyya, S. Zybell, S. Winnerl, M. Helm, M. Hopkinson, L. R. Wilson, H. Schneider
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Scaling growth kinetics of self-induced GaN nanowires
Vladimir G. Dubrovskii, Vincent Consonni, Lutz Geelhaar, Achim Trampert, Henning Riechert
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Conditional photon-assisted transport in coupled quantum dot
Yan Xie, Weidong Xie, Suqing Duan, Ning Yang, Jing Chen, Wei Zhang, Weidong Chu, Xian-Geng Zhao
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Formation of coupled three-dimensional GeSi quantum dot crystals
Y. J. Ma, Z. Zhong, Q. Lv, T. Zhou, X. J. Yang, Y. L. Fan, Y. Q. Wu, J. Zou, Z. M. Jiang
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Dynamical localization of two electrons in triple-quantum-dot shuttles
Pages 1636-1640
Phys. Lett. A, Vol: 376, No: 19 , published: 09 April 2012
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
Dong-Soo Shin, Dong-Pyo Han, Ji-Yeon Oh, Jong-In Shim
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires
Eunsoon Oh, Byoung Woo Lee, So-Jeong Shim, Heon-Jin Choi, Byoung Hee Son, Yeong Hwan Ahn, Le Si Dang
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Intertwining of Zeeman and Coulomb interactions on excitons in highly symmetric semiconductor quantum dots
D. Y. Oberli
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 06 April 2012
Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−x single crystals
Z. Q. Liu, W. M. Lü, X. Wang, Z. Huang, A. Annadi, S. W. Zeng, T. Venkatesan, and Ariando
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 06 April 2012
Wave-function Monte Carlo method for polariton condensates
Michiel Wouters
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 06 April 2012
Fast Hybrid Silicon Double-Quantum-Dot Qubit
Zhan Shi, C. B. Simmons, J. R. Prance, John King Gamble, Teck Seng Koh, Yun-Pil Shim, Xuedong Hu, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, and S. N. Coppersmith
Phys. Rev. Lett., Vol: 108, No: 14 , published: 06 April 2012
Theory of optical properties of II-VI semiconductor quantum dots containing a single magnetic ion in a strong magnetic field
Anna H. Trojnar, Marek Korkusiński, Marek Potemski, and Pawel Hawrylak
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 06 April 2012
Transport properties of a multichannel Kondo dot in a magnetic field
Christoph B. M. Hörig and Dirk Schuricht
Phys. Rev. B: Condens. Matter, Vol: 85, No: 13 , published: 06 April 2012
Slow-light dispersion by transparent waveguide plasmon polaritons
Atsushi Ishikawa, Rupert F. Oulton, Thomas Zentgraf, and Xiang Zhang
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 05 April 2012
Weak localization in a lateral superlattice with Rashba and Dresselhaus spin-orbit interaction
D. C. Marinescu and Andrei Manolescu
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 05 April 2012
Cherenkov emission in a nanowire material
David E. Fernandes, Stanislav I. Maslovski, and Mário G. Silveirinha
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 05 April 2012
Polarization properties of excitonic qubits in single self-assembled quantum dots
Catherine Tonin, Richard Hostein, Valia Voliotis, Roger Grousson, Aristide Lemaitre, and Anthony Martinez
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 05 April 2012
X-ray edge singularity in optical spectra of quantum dots
M. Heyl and S. Kehrein
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 05 April 2012
Spin-orbit interaction from low-symmetry localized defects in semiconductors
Oleg Chalaev, G. Vignale and Michael E. Flatté
Europhys. Lett. , Vol: 98, No: 1 , published: 04 April 2012
Phase transitions and incommensurability in the layered semiconductor TlInS2—an NMR study
A. M. Panich, D. Mogilyansky and R. M. Sardarly
J. Phys.: Condens. Matter. , Vol: 24, No: 13 , published: 04 April 2012
Theory of temperature coefficient of resistivity: Application to amorphous Si and Ge
M.-L. Zhang and D. A. Drabold
Europhys. Lett. , Vol: 98, No: 1 , published: 04 April 2012
2-Aminopyrimidine-silver(I) based organic semiconductors: Electronic structure and optical response
A. Riefer, E. Rauls, W. G. Schmidt, J. Eberhard, I. Stoll, and J. Mattay
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 04 April 2012
The effect of exchange interaction on quasiparticle Landau levels in narrow-gap quantum well heterostructures
S. S. Krishtopenko, V. I. Gavrilenko and M. Goiran
J. Phys.: Condens. Matter. , Vol: 24, No: 13 , published: 04 April 2012
Dynamic response of antidot nanostructures with alternating hole diameters
J. Ding, D. Tripathy and A. O. Adeyeye
Europhys. Lett. , Vol: 98, No: 1 , published: 04 April 2012
Transport in quantum dot stacks using the transfer Hamiltonian method in self-consistent field regime
S. Illera, J. D. Prades, A. Cirera and A. Cornet
Europhys. Lett. , Vol: 98, No: 1 , published: 04 April 2012
Measurements of a fast nuclear-spin dynamics in a single InAs quantum dot with positively charged exciton
X. M. Dou, B. Q. Sun, D. S. Jiang, H. Q. Ni and Z. C. Niu
Europhys. Lett. , Vol: 98, No: 1 , published: 04 April 2012
Hole subbands in freestanding nanowires: six-band versus eight-band kp modelling
V. V. Ravi Kishore, N. Čukarić, B. Partoens, M. Tadić and F. M. Peeters
J. Phys.: Condens. Matter. , Vol: 24, No: 13 , published: 04 April 2012
On the temperature dependence of ballistic Coulomb drag in nanowires
M. I. Muradov and V. L. Gurevich
J. Phys.: Condens. Matter. , Vol: 24, No: 13 , published: 04 April 2012
Enhanced photoluminescence of colloidal nanocrystals embedded in epitaxially grown semiconductor microstructures
J. Kampmeier, M. Rashad, U. Woggon, M. Ruth, C. Meier, D. Schikora, K. Lischka, and A. Pawlis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 04 April 2012
Fermi level tuning and a large activation gap achieved in the topological insulator Bi2Te2Se by Sn doping
Zhi Ren, A. A. Taskin, Satoshi Sasaki, Kouji Segawa, and Yoichi Ando
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 03 April 2012
Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study
Q. Qiao, R. F. Klie, S. Öğüt, and J. C. Idrobo
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 03 April 2012
Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells
J. D. Watson, S. Mondal, G. Gardner, G. A. Csáthy, and M. J. Manfra
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 03 April 2012
A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)
Chuan-Zhen Zhao, Na-Na Li, Tong Wei, Chun-Xiao Tang, Ke-Qing Lu
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Electronic structure of the indium-adsorbed Au/Si(111)-3×√3 surface: A first-principles study
Chia-Hsiu Hsu, Wen-Huan Lin, Vidvuds Ozolins, and Feng-Chuan Chuang
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 02 April 2012
Electron-electron scattering and resistivity of ballistic multimode channels
K. E. Nagaev and N. Yu. Sergeeva
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 02 April 2012
Theoretical investigation of organic magnetoresistance based on hyperfine interaction
X. X. Li, X. F. Dong, J. Lei, S. J. Xie, A. Saxena
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature
J. L. Yu, Y. H. Chen, C. Y. Jiang, Y. Liu, H. Ma, L. P. Zhu
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Raman sensitivity to crystal structure in InAs nanowires
Jaya Kumar Panda, Anushree Roy, Achintya Singha, Mauro Gemmi, Daniele Ercolani, Vittorio Pellegrini, Lucia Sorba
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Structural and optical characterization of SixGe1−xySny alloys grown by molecular beam epitaxy
Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
E. P. Smakman, J. K. Garleff, R. J. Young, M. Hayne, P. Rambabu, P. M. Koenraad
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Free carrier accumulation at cubic AlGaN/GaN heterojunctions
Q. Y. Wei, T. Li, J. Y. Huang, F. A. Ponce, E. Tschumak, A. Zado, D. J. As
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Few electron double quantum dot in an isotopically purified 28Si quantum well
A. Wild, J. Kierig, J. Sailer, J. W. Ager, III, E. E. Haller, G. Abstreiter, S. Ludwig, D. Bougeard
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning
C. W. Petz, D. Yang J., Levy, J. A. Floro
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Temperature dependence of dynamic nuclear polarization and its effect on electron spin relaxation and dephasing in InAs/GaAs quantum dots
J. Beyer, Y. Puttisong, I. A. Buyanova, S. Suraprapapich, C. W. Tu, W. M. Chen
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Kondo temperature and screening extension in a double quantum dot system
L. C. Ribeiro, E. Vernek, G. B. Martins, and E. V. Anda
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 02 April 2012
Adiabatic manipulations of Majorana fermions in a three-dimensional network of quantum wires
Bertrand I. Halperin, Yuval Oreg, Ady Stern, Gil Refael, Jason Alicea, and Felix von Oppen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 14 , published: 02 April 2012
Optical generation of polarized photoluminescence from GaAs(100)
Zhan Hu, Sima Singha, Daniel H. Rich, Robert J. Gordon
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Origin of size-dependent photoluminescence decay dynamics in colloidal γ-Ga2O3 nanocrystals
Manu Hegde, Ting Wang, Zoran L. Miskovic, Pavle V. Radovanovic
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure
P. H. Wu, D. Dumcenco, Y. S. Huang, H. P. Hsu, C. H. Lai, T. Y. Lin, D. Chrastina, G. Isella, E. Gatti, K. K. Tiong
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Role of nitrogen vacancies in the luminescence of Mg-doped GaN
Qimin Yan, Anderson Janotti, Matthias Scheffler, Chris G. Van de Walle
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Nanocrystal-based Ohmic contacts on n and p-type germanium
V. Pavan Kishore, Prashanth Paramahans, Sunny Sadana, Udayan Ganguly, Saurabh Lodha
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon
S. D. Carnevale, C. Marginean, P. J. Phillips, T. F. Kent, A. T. M. G. Sarwar, M. J. Mills, R. C. Myers
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors
Ze Yuan, Aneesh Nainani, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition
R. C. Rai, M. Guminiak, S. Wilser, B. Cai,M. L. Nakarmi
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Analysis of dielectric loaded surface plasmon waveguide structures: Transfer matrix method for plasmonic devices
Xiao Yong He, Qi Jie Wang, Siu Fung Yu
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Fast Carrier Formation from Acceptor Exciton in Low-Gap Organic Photovotalic
Kouhei Yonezawa, Hayato Kamioka, Takeshi Yasuda, Liyuan Han, Yutaka Moritomo
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
Binding energy of a donor impurity in GaAs image systems under electric and magnetic fields, and hydrostatic pressure
Pages 1335-1341
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Donor impurity energy levels in GaAs/AlxGa1−xAs circular quantum dots
Pages 1361-1366
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
External electric field, hydrostatic pressure and temperature effects on the binding energy of an off-center hydrogenic impurity confined in a spherical Gaussian quantum dot
Pages 1562-1566
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Deep-level transient spectroscopy and photoluminescence measurements of dissociation energy of the 1.014-eV copper center in copper-diffused silicon crystal
Minoru Nakamura and Susumu Murakami
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors
Salah Saadaoui, Mohamed Mongi Ben Salem, Malek Gassoumi, Hassen Maaref, Christophe Gaquière
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Giant conductance and phase time anomalous events of hole quantum transport
Pages 1730-1741
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates
M. C. Debnath, T. D. Mishima, M. B. Santos, K. Hossain, O. W. Holland
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Out-of-plane anisotropic magnetoconductance in a spin–orbit-coupled two-dimensional electron gas
Pages 1636-1638
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs
Denis Dolgos, Andreas Schenk, Bernd Witzigmann
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
A phonon scattering assisted injection and extraction based terahertz quantum cascade laser
E. Dupont, S. Fathololoumi, Z. R. Wasilewski, G. Aers, S. R. Laframboise, M. Lindskog, S. G. Razavipour, A. Wacker, D. Ban, H. C. Liu
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K. Kasahara, Y. Baba, K. Yamane, Y. Ando, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, K. Hamaya
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Controllable non-equilibrium spin injection of conduction electrons in magnetic quantum dots
Pages 1304-1308
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Electrical and optical properties of sputtered amorphous vanadium oxide thin films
N. J. Podraza, B. D. Gauntt, M. A. Motyka, E. C. Dickey, M. W. Horn
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Fabrication and optical properties of porous InP structures
Pages 1324-1328
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Electron Raman scattering in asymmetrical multiple quantum wells system with an external electric field
Pages 1152-1157
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Ultrafast laser-induced changes in optical properties of semiconductors
C. C. Chirila, Freda C. H. Lim, M. G. Gavaza
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Nonlinear optical properties of a Pöschl–Teller quantum well under electric and magnetic fields
Pages 1612-1616
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Nonlinear refraction and nonlinear absorption of CdSe0.3S0.7/ZnS quantum dots
Pages 1158-1161
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Phase and amplitude control of optical bistability in the three-coupled quantum wells
Pages 1288-1294
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Contactless Microwave Measurements of Photoconductivity in Silicon Hyperdoped with Chalcogens
Daniel Recht, David Hutchinson, Thomas Cruson, Anthony DiFranzo, Andrew McAllister, Aurore J. Said, Jeffrey M. Warrender, Peter D. Persans, Michael J. Aziz
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
Omer Salihoglu, Abdullah Muti, Kutlu Kutluer, Tunay Tansel, Rasit Turan, Coskun Kocabas, Atilla Aydinli
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Forward and reverse bias dependence of radiative recombination efficiency in green (In,Ga)N quantum well diodes
Pages 1278-1281
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
STM images and STS for a rectangular quantum corral constructed with δ-function barriers and the effect of an adsorbed atom on STM images and STS
Pages 1410-1419
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films
Songtao Wo, Randall L. Headrick, John E. Anthony
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors
Ján Kuzmík
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
Ab initio calculation of the CdSe/CdTe heterojunction band offset using the local-density approximation-1/2 technique with spin-orbit corrections
M. Ribeiro, Jr., L. R. C. Fonseca, T. Sadowski, R. Ramprasad
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures
Pages 1282-1287
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Frequency-Tunable Quantum Beats under a Franz–Keldysh Oscillation Condition in a GaAs/AlxGa1-xAs Superlattice
Takayuki Hasegawa, Yoshihiro Takagi, Masaaki Nakayama
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
Wolfgang G. Scheibenzuber and Ulrich T. Schwarz
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
Design and modeling of InAs/GaSb type II superlattice based dual-band infrared detectors
Gamini Ariyawansa, Matt Grupen, Joshua M. Duran, John E. Scheihing, Thomas R. Nelson, Michael T. Eismann
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well
Takahisa Tanaka, Go Tsuchiya, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki, Kohei M. Itoh
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
S. R. C. Pinto, M. Buljan, A. Chahboun, M. A. Roldan, S. Bernstorff, M. Varela, S. J. Pennycook, N. P. Barradas, E. Alves, S. I. Molina, M. M. D. Ramos, M. J. M. Gomes
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Tunable energy bands and spin filtering in two-dimensional superlattices with spin-orbit interaction
R. L. Zhang, J. Li, D. X. Qi, Qing Hu, R. W. Peng, R. S. Huang, Mu Wang
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Comparison of measurement techniques for electron spin relaxation time in a GaAs/AlGaAs multiple quantum well
Pages 1176-1181
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Hydrostatic pressure and coupling-barrier effects on the cyclotron effective mass and Landé image factor in GaAs–Ga1−xAlxAs double coupled quantum wells
Pages 1196-1201
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Inhibition and enhancement of two-photon absorption in a four-level inverted-Y semiconductor quantum well system
Pages 1267-1271
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Effects of interface grading on optical anisotropy in type-II quantum wells on high-index substrates
Pages 1351-1356
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Transverse laser dressing effects on the subband density of states in a 20-nm-wide GaAs/Al0.3Ga0.7As quantum well wire
Pages 1446-1453
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Hot-optical-phonon effects on electron relaxation in optically pumped step quantum well structures
Pages 1535-1538
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Particle density distribution in a pyramid-shaped quantum well
Pages 1602-1607
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Power output and efficiency of quantum dot attached to ferromagnetic electrodes with non-collinear magnetic moments
Pages 1516-1522
J. Magn. Magn. Mater., Vol: 324, No: 8 , published: 01 April 2012
Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)
Michael Wiesner, Moritz Bommer, Wolfgang-Michael Schulz, Martin Etter, Jens Werner, Michael Oehme, Jörg Schulze, Michael Jetter,  Peter Michler
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
GaN based nanorods for solid state lighting
Shunfeng Li and Andreas Waag
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells
Yasushi Shoji, Kohei Narahara, Hideharu Tanaka, Takashi Kita, Katsuhiro Akimoto, Yoshitaka Okada
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Size dependent optical properties of the CdSe-CdS core-shell quantum dots in the strong confinement regime
S. Mathew, Amit D. Saran, Bishwajeet Singh Bhardwaj, Santhi Ani Joseph, P. Radhakrishnan, V. P. N. Nampoori, C. P. G. Vallabhan, Jayesh R. Bellare
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
Jinyoung Hwang, Andrew J. Martin, Joanna M. Millunchick, Jamie D. Phillips
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition
Pages 1146-1151
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
First-principles study of electron transport in few-electron open quantum dots by the Hartree–Fock approach
Pages 1209-1213
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Effect of electron–electron interaction on the transport through a nano-wire
Pages 1214-1217
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Interconnection effects on the electronic and optical properties of Ge nanostructures: A semi-empirical approach
Pages 1230-1235
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Spin–orbit interaction effects on the optical rectification of a cubic quantum dot
Pages 1241-1243
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Temperature effects on the absorption properties in II–VI semiconductor core–shell nanocrystals
Pages 1250-1255
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Screening theory based modeling of the quantum Hall based quasi-particle interferometers defined at quantum dots
Pages 1425-1428
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Electronic properties of aperiodic quantum dot chains
Pages 1580-1584
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Growth and electrical characterization of semiconducting Ge nanowires
Pages 1776-1779
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Electronic states and intraband terahertz optical transitions in InGaAs quantum rods
Nikola Prodanović, Nenad Vukmirović, Dragan Indjin, Zoran Ikonić, Paul Harrison
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Tunable deformation and electronic properties of single-walled ZnO nanotubes under a transverse electric field
Yanzong Wang, Baolin Wang, Qinfang Zhang, Jijun Zhao, Daning Shi, Seiji Yunoki, Fanjie Kong, Ning Xu
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Spin-polarized transport through a laterally coupled Aharonov–Bohm ring with two magnetic impurities
Pages 1454-1460
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn
M. A. Reshchikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Temperature and composition dependence of photoluminescence dynamics in CdSxSe1−x (0 ≤ x ≤ 1) nanobelts
H. W. Liu, J. P. Lu, H. M. Fan, C. H. Sow, S. H. Tang, X. H. Zhang
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Confinement effects on valence-subband character and polarization anisotropy in (11math2) semipolar InGaN/GaN quantum wells
Christopher Roberts, Qimin Yan, Mao-Sheng Miao, Chris G. Van de Walle
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Capability of photoluminescence for characterization of multi-crystalline silicon
T. Mchedlidze, W. Seifert, M. Kittler, A. T. Blumenau, B. Birkmann, T. Mono, M. Müller
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films
A. Cretì, D. Valerini, A. Taurino, F. Quaranta, M. Lomascolo, R. Rella
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Controlling energy transfer processes and engineering luminescence efficiencies with low dimensional doping
Xiaoqiang Yu, Christopher J. Summers, Wounjhang Park
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Photoluminescence quenching and conductivity enhancement of PVK induced by CdS quantum dots
Pages 1272-1277
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Synthesis, characterization and room temperature photoluminescence properties of Al doped ZnO nanorods
Pages 1399-1405
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Effects of heat treatment on physical, microstructural and optical characteristics of PbS luminescent nanocrystals
Pages 1429-1435
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment
Phyllis S. Y. Lim, Dong Zhi Chi, Poh Chong Lim, Yee-Chia Yeo
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts
Winfried Mönch
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal–Oxide–Semiconductor Field-Effect Transistors
Mitsuo Okamoto, Youichi Makifuchi, Miwako Iijima, Yoshiyuki Sakai, Noriyuki Iwamuro, Hiroshi Kimura, Kenji Fukuda, Hajime Okumura
Appl. Phys. Express, Vol: 5, No: 4 , published: 01 April 2012
Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As
G. W. Paterson, M. C. Holland, I. G. Thayne, A. R. Long
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems
I. Humer. H. P. Huber, F. Kienberger.,J. Danzberger, J. Smoliner
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Bipolarons and polarons in the Holstein-Hubbard model: analogies and differences
O.S. Barišic and S. Barišic
Eur. Phys. J. B , Vol: 85, No: 3 , published: 30 March 2012
Lattice thermal conductivity of (Bi1−xSbx)2Te3 alloys with embedded nanoparticles
N. A. Katcho, N. Mingo, and D. A. Broido
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 30 March 2012
Thermoelectric properties of AgGaTe2 and related chalcopyrite structure materials
David Parker and David J. Singh
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 30 March 2012
Magnetoplasmon resonance in a two-dimensional electron system driven into a zero-resistance state
A. T. Hatke, M. A. Zudov, J. D. Watson, and M. J. Manfra
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 30 March 2012
Optical properties of metamaterials: Influence of electric multipoles, magnetoelectric coupling, and spatial dispersion
N. Guth, B. Gallas, J. Rivory, J. Grand, A. Ourir, G. Guida, R. Abdeddaim, C. Jouvaud, and J. de Rosny
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 30 March 2012
Quantum transport of double quantum dots coupled to an oscillator in arbitrary strong coupling regime
C. Wang, J. Ren, B.W. Li,and Q.H. Chen
Eur. Phys. J. B , Vol: 85, No: 3 , published: 30 March 2012
Local spin polarisation of electrons in Rashba semiconductor nanowires: effects of the bound state
X.B. Xiao, F. Li, Y.G. Chen and N.H. Liu
Eur. Phys. J. B , Vol: 85, No: 3 , published: 30 March 2012
Direct Imaging of Electron States in Open Quantum Dots
N. Aoki,R. Brunner,A. M. Burke,R. Akis,R. Meisels,D. K. Ferry,Y.Ochiai
Phys. Rev. Lett., Vol: 108, No: 13 , published: 30 March 2012
Atomic and itinerant effects at the transition-metal x-ray absorption K pre-edge exemplified in the case of V2O3
P. Hansmann, M. W. Haverkort, A. Toschi, G. Sangiovanni, F. Rodolakis, J. P. Rueff, M. Marsi, and K. Held
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 30 March 2012
Thermoelectric properties of n-type Bi2(Te0.85Se0.15)3 single crystals doped with CuBr and SbI3
Ö. Ceyda Yelgel and G. P. Srivastava
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 29 March 2012
Optimal thermoelectric figure of merit in Bi2Te3/Sb2Te3 quantum dot nanocomposites
Jun Zhou, Yuanyuan Wang, Jeff Sharp, and Ronggui Yang
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 29 March 2012
Approximate theory of temperature coefficient of resistivity of amorphous semiconductors
Ming-Liang Zhang and D. A. Drabold
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 29 March 2012
Magneto-optical analysis of the effective g tensor and electron spin decoherence in the multivalley conduction band of bulk germanium
C. Hautmann and M. Betz
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 29 March 2012
Systematic computation of crystal-field multiplets for x-ray core spectroscopies
A. Uldry, F. Vernay, and B. Delley
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 29 March 2012
Bethe ansatz and ordinary differential equation correspondence for degenerate Gaudin models
Omar El Araby, Vladimir Gritsev, and Alexandre Faribault
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 29 March 2012
Mean free path of a suddenly created fast electron moving in a degenerate electron gas
I. Nagy and P. M. Echenique
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 29 March 2012
Nature of the hole states in Li-doped NiO
Hungru Chen and John H. Harding
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 28 March 2012
Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation
S. Sorieul, X. Kerbiriou, J.-M. Costantini, L. Gosmain, G. Calas and C. Trautmann
J. Phys.: Condens. Matter. , Vol: 24, No: 12 , published: 28 March 2012
Direct Measurement of the Triplet Exciton Diffusion Length in Organic Semiconductors
Oleksandr V. Mikhnenko,Roald Ruiter,Paul W. M. Blom,Maria Antonietta Loi
Phys. Rev. Lett., Vol: 108, No: 13 , published: 28 March 2012
Ballistic transport of (001) GaAs two-dimensional holes through a strain-induced lateral superlattice
D. Kamburov, H. Shapourian, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, and R. Winkler
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 28 March 2012
Localized End States in Density Modulated Quantum Wires and Rings
Gangadharaiah Suhas, Luka Trifunovic,Daniel Loss
Phys. Rev. Lett., Vol: 108, No: 13 , published: 28 March 2012
Insulators containing CuCl4X22− (X=H2O, NH3) units: Origin of the orthorhombic distortion observed only for CuCl4(H2O)22−
P. García-Fernández, J. M. García-Lastra, A. Trueba, M. T. Barriuso, J. A. Aramburu, and M. Moreno
Phys. Rev. B: Condens. Matter, Vol: 85, No: 9 , published: 27 March 2012
Effects of Eu doping on SmB6 single crystals
Sunmog Yeo, Kimyung Song, Namjung Hur, Z. Fisk, and Pedro Schlottmann
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 27 March 2012
Gaussian charge-transfer charge distributions for non-self-consistent electronic structure calculations
M. Marsman, G. Jordan, L.-E. Hintzsche, Y.-S. Kim, and G. Kresse
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 27 March 2012
Spin accumulation encoded in electronic noise for mesoscopic billiards with finite tunneling rates
J. G. G. S. Ramos, A. L. R. Barbosa, D. Bazeia, and M. S. Hussein
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 27 March 2012
Spectral function of few electrons in quantum wires and carbon nanotubes as a signature of Wigner localization
Andrea Secchi and Massimo Rontani
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 26 March 2012
Impurity scattering in the bulk of topological insulators
Cheung Chan and Tai-Kai Ng
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 26 March 2012
Tuning asymmetry parameter of Fano resonance of spoof surface plasmons by modes coupling
F. Cheng, H. F. Liu, B. H. Li, J. Han, H. Xiao, X. F. Han, C. Z. Gu, X. G. Qiu
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Об энергетических уровнях серебра в твердых растворах Ge-Si
Тагиров В.И., Агамалиев З.А., Садыхова С.Р., Гулиев А.Ф., Гахраманов Н.Ф.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
High-resolution photoelectron spectroscopy study of Kondo metals: SmSn3 and Sm0.9La0.1Sn3
Hitoshi Yamaoka, Patrik Thunström, Ignace Jarrige, Kenya Shimada, Naohito Tsujii, Masashi Arita, Hideaki Iwasawa, Hirokazu Hayashi, Jian Jiang, Takafumi Habuchi, Daisuke Hirayama, Hirofumi Namatame, Masaki Taniguchi, Urara Murao, Shingo Hosoya, Akira Tamaki, and Hideaki Kitazawa
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 26 March 2012
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
Dong Ji, Bing Liu, Yanwu Lu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Влияние delta -образной квантовой ямы на границе одномерной решетки на свойства поверхностных электронных состояний таммовского типа
Аверков Ю.О., Яковенко В.М.
Физ. тверд. тела, Vol: 54, No: 3 , published: 26 March 2012
Диэлектрические характеристики и фазовые переходы в твердых растворах Tl(InS2)1-x(FeSe2)x
Шелег А.У., Гуртовой В.Г., Мустафаева С.Н., Керимова Э.М., Шевцова В.В.
Физ. тверд. тела, Vol: 54, No: 3 , published: 26 March 2012
Диэлектрические свойства и фазовые переходы в кристаллах твердых растворов TlInSx Se2-x
Шелег А.У., Гуртовой В.Г., Шевцова В.В., Алиев В.А.
Физ. тверд. тела, Vol: 54, No: 3 , published: 26 March 2012
Влияние гидрирования на электропроводность тонких пленок диоксида ванадия
Андреев В.Н., Климов В.А., Компан М.Е.
Физ. тверд. тела, Vol: 54, No: 3 , published: 26 March 2012
Вольт-амперные характеристики монокристаллов соединения MnGa2Se4
Тагиев Б.Г., Тагиев О.В., Асадуллаева С.Г., Эйюбов Г.Й.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Молекулярно-динамический расчет коэффициента теплопроводности монокристалла германия
Селезенев А.А., Алейников А.Ю., Ермаков П.В., Ганчук Н.С., Ганчук С.Н., Jones R.E.
Физ. тверд. тела, Vol: 54, No: 3 , published: 26 March 2012
Влияние самария на термоэлектрическую добротность твердых растворов SmxPb1-xTe
Aлиев Ф.Ф., Гасанов Г.А.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Electron temperature in electrically isolated Si double quantum dots
A. Rossi, T. Ferrus, D. A. Williams
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Влияние структурных дефектов технологического происхождения на оптические и фотоэлектрические свойства твердого раствора AgCd2-xMnxGaSe4
Третяк А.П., Давидюк Г.Е., Божко В.В., Булатецкая Л.В., Парасюк О.В.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Исследование методом электроотражения влияния gamma -облучения на оптические свойства эпитаксиальных пленок GaN
Беляев А.Е., Клюй Н.И., Конакова Р.В., Лукьянов А.Н., Данильченко Б.А., Свешников Ю.Н., Клюй А.Н.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Direct and indirect two-photon absorption in Ge within the effective mass approximation
Hernando Garcia, Kobra Nasiri Avanaki
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Резонансное и релаксационное поглощение ультразвука анизотропными ян-теллеровскими центрами в GaAs
Барышников К.А., Аверкиев Н.С., Монахов А.М., Гудков В.В.
Физ. тверд. тела, Vol: 54, No: 3 , published: 26 March 2012
Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC
Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi, Akimasa Kinoshita, Kyouichi Ichinoseki, Hajime Okumura
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Об особенностях процессов рекомбинации в слоистых пленках a-Si : H
Курова И.А., Ормонт Н.Н.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Non-Onsager mechanism of long-wave photogeneration in amorphous selenium at high electric fields
A. Reznik, K. Jandieri, F. Gebhard, S. D. Baranovskii
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Особенности температурной зависимости концентрации электронов проводимости в узкощелевом и бесщелевом
состоянии CdxHg1-xTe
Алиев С.А., Зульфигаров Э.И., Селим-заде Р.И.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Photoinduced modification of surface states in nanoporous InP
J. Lloyd-Hughes, S. Müller, G. Scalari, H. Bishop, A. Crossley, M. Enachi, L. Sirbu, I. M. Tiginyanu
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3 N4 by CDLTS
Gassoumi M., Grimbert B., Gaquiere C., Maaref H.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter
G. K. Rasulova, P. N. Brunkov, I. V. Pentin, A. Yu. Egorov, D. A. Knyazev, A. V. Andrianov, A. O. Zakhar’in, S. G. Konnikov, G. N. Gol’tsman
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Evidence for barrier-to-well injection of carriers in high quality ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si
Pages 1515-1518
Phys. Lett. A, Vol: 376, No: 17 , published: 26 March 2012
Effect of internal optical loss on the modulation bandwidth of a quantum dot laser
Yuchang Wu, Robert A. Suris, Levon V. Asryan
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Quantum-dot nano-cavity lasers with Purcell-enhanced stimulated emission
N. Gregersen, T. Suhr, M. Lorke, J. Mørk
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots
M. J. Milla, J. M. Ulloa, A. Guzmán
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Carrier dynamics and conductivity of SnO2 nanowires investigated by time-resolved terahertz spectroscopy
Demetra Tsokkou, Andreas Othonos, Matthew Zervos
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Optically controlled phase gate for two spin qubits in coupled quantum dots
Li-Bo Chen, L. J. Sham, and Edo Waks
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 26 March 2012
Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature
Pages 1495-1498
Phys. Lett. A, Vol: 376, No: 17 , published: 26 March 2012
Инфракрасное излучение из кремниевых наноструктур, сильно легированных бором
Баграев Н.Т., Клячкин Л.Е., Кузьмин Р.В., Маляренко А.М., Машков В.А.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Влияние легирования фторидом эрбия на фотолюминесценцию пленок SiOx
Власенко Н.А., Сопинский Н.В., Гуле Е.Г., Стрельчук В.В., Олексенко П.Ф., Велигура Л.И., Николенко А.С., Мухльо М.А.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Фотолюминесцентное исследование структурной эволюции аморфных и кристаллических нанокластеров кремния при термическом отжиге слоев субоксида кремния различной стехиометрии
Жигунов Д.М., Швыдун Н.В., Емельянов А.В., Тимошенко В.Ю., Кашкаров П.К., Семиногов В.Н.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Картирование усиления двухфотонной люминесценции в микроструктурах оксида цинка
Семин С.В., Шерстюк Н.Э., Мишина Е.Д., Герман К., Кулюк Л., Расинг Т., Пенг Л.-Х.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
Donguk Nam, David Sukhdeo, Szu-Lin Cheng, Arunanshu Roy, Kevin Chih-Yao Huang, Mark Brongersma, Yoshio Nishi, Krishna Saraswat
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma
Woo Jin Ha, Sameer Chhajed, Seung Jae Oh, Sunyong Hwang, Jong Kyu Kim, Jae-Hoon Lee, Ki-Se Kim
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Температурная зависимость контактного сопротивления омических контактов Au-Ti-Pd2Si-n+-Si, подвергнутых микроволновому облучению
Беляев А.Е., Болтовец Н.С., Конакова Р.В., Кудрик Я.Я., Саченко А.В., Шеремет В.Н., Виноградов А.О.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Температурная зависимость контактного сопротивления омических контактов на основе соединений A III B V с высокой плотностью дислокаций
Саченко А.В., Беляев А.Е., Бобыль А.В., Болтовец Н.В., Иванов В.Н., Капитанчук Л.М., Конакова Р.B., Кудрик Я.Я., Миленин В.В., Новицкий С.В., Саксеев Д.А., Тарасов И.С., Шеремет В.Н., Яговкина М.А.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Токи утечки в 4H-SiC-диодах Шоттки с интегрированной шоттки-(p-n-структурой)
Иванов П.А., Грехов И.В., Потапов А.С., Коньков О.И., Ильинская Н.Д., Самсонова Т.П., Korol'kov O., Sleptsuk N.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Jun Wu, E. Lind, R. Timm, Martin Hjort, A. Mikkelsen, L.-E. Wernersson
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics
Chao Chen, Xingzhao Liu, Jihua Zhang, Benlang Tian, Hongchuan Jiang, Wanli Zhang, Yanrong Li
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
An analytical gate tunneling current model for MOSFETs
Kazerouni Iman Abaspur, Hosseini Seyed Ebrahim
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Intrinsic Nature of the Excess Electron Distribution at the TiO2(110) Surface
P. Krüger, J. Jupille, S. Bourgeois, B. Domenichini, A. Verdini, L. Floreano, and A. Morgante
Phys. Rev. Lett., Vol: 108, No: 12 , published: 23 March 2012
First-Principles Optical Spectra for F Centers in MgO
Patrick Rinke, André Schleife, Emmanouil Kioupakis, Anderson Janotti, Claudia Rödl, Friedhelm Bechstedt, Matthias Scheffler, and Chris G. Van de Walle
Phys. Rev. Lett., Vol: 108, No: 12 , published: 23 March 2012
Role of interband and photoinduced absorption in the nonlinear refraction and absorption of resonantly excited PbS quantum dots around 1550 nm
Abdoulghafar Omari, Iwan Moreels, Francesco Masia, Wolfgang Langbein, Paola Borri, Dries Van Thourhout, Pascal Kockaert, and Zeger Hens
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 23 March 2012
Discretization of Electronic States in Large InAsP/InP Multilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy
B. Fain, I. Robert-Philip, A. Beveratos, C. David, Z. Z. Wang, I. Sagnes, and J. C. Girard
Phys. Rev. Lett., Vol: 108, No: 12 , published: 23 March 2012
Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots
Dimitrie Culcer, A. L. Saraiva, Belita Koiller, Xuedong Hu, and S. Das Sarma
Phys. Rev. Lett., Vol: 108, No: 12 , published: 23 March 2012
Exchange-Coupled Donor Dimers in Nanocrystal Quantum Dots
R. N. Pereira, A. J. Almeida, A. R. Stegner, M. S. Brandt, and H. Wiggers
Phys. Rev. Lett., Vol: 108, No: 12 , published: 23 March 2012
Spin dynamics of dark polariton solitons
Albrecht Werner, Oleg A. Egorov, and Falk Lederer
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 22 March 2012
Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
N. Catarino, E. Nogales, N. Franco, V. Darakchieva, S. M. C. Miranda, B. Méndez, E. Alves, J. G. Marques and K. Lorenz
Europhys. Lett. , Vol: 97, No: 6 , published: 22 March 2012
Dynamo action due to spatially dependent magnetic permeability
B. Gallet, F. Pétrélis and S. Fauve
Europhys. Lett. , Vol: 97, No: 6 , published: 22 March 2012
Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system
M. Syperek, J. Andrzejewski, W. Rudno-Rudziński, G. Sęk, J. Misiewicz, E. M. Pavelescu, C. Gilfert, and J. P. Reithmaier
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 22 March 2012
Influence of injected charge carriers on photocurrents in polymer solar cells
Dominique J. Wehenkel, L. Jan Anton Koster, Martijn M. Wienk, and René A. J. Janssen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 22 March 2012
Signatures of quantum phase transitions in parallel quantum dots: Crossover from local moment to underscreened spin-1 Kondo physics
Arturo Wong, W. Brian Lane, Luis G. G. V. Dias da Silva, Kevin Ingersent, Nancy Sandler, and Sergio E. Ulloa
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 22 March 2012
Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism
Yingzi Peng, Dexuan Huo, Haiping He, Yuan Li, Lingwei Li, Huawen Wang, Zhenghong Qian
J. Magn. Magn. Mater., Vol: 324, No: 5 , published: 22 March 2012
Electron dynamics of shocked polyethylene crystal
Patrick L. Theofanis, Andres Jaramillo-Botero, William A. Goddard, III, Thomas R. Mattsson, and Aidan P. Thompson
Phys. Rev. B: Condens. Matter, Vol: 85, No: 9 , published: 22 March 2012
A device with two kinds of functions —Ultraviolet photodetector and electroluminescence: Fabrication and carrier transport mechanism
Hai Zhou, Guojia Fang, Yongdan Zhu, Nishuang Liu, Haoning Wang, Huihui Huang, Songzhan Li and Xingzhong Zhao
Europhys. Lett. , Vol: 97, No: 6 , published: 22 March 2012
Valence band mixing of cubic GaN/AlN quantum dots
C. Segarra, J. I. Climente and J. Planelles
J. Phys.: Condens. Matter. , Vol: 24, No: 11 , published: 21 March 2012
Electronic structure study of ultrathin Ag(111) films modified by a Si(111) substrate and $\sqrt{3}\times \sqrt{3}$-Ag2Bi surface
M. Ogawa, P. M. Sheverdyaeva, P. Moras, D. Topwal, A. Harasawa, K. Kobayashi, C. Carbone and I. Matsuda
J. Phys.: Condens. Matter. , Vol: 24, No: 11 , published: 21 March 2012
Structural, vibrational and optical studies on an amorphous Se90P10 alloy produced by mechanical alloying
E. C. Oliveira, E. Deflon, K. D. Machado, T. G. Silva and A. S. Mangrich
J. Phys.: Condens. Matter. , Vol: 24, No: 11 , published: 21 March 2012
Ab initio investigation of surface stress response to charging of transition and noble metals
J.-M. Albina, C. Elsässer, J. Weissmüller, P. Gumbsch, and Y. Umeno
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 21 March 2012
Quantum lifetime of two-dimensional electrons in a magnetic field
Scott Dietrich, Sergey Vitkalov, D. V. Dmitriev, and A. A. Bykov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 20 March 2012
Quadrupolar spectra of nuclear spins in strained InxGa1−xAs quantum dots
Ceyhun Bulutay
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 20 March 2012
Tunneling induced transparency and slow light in quantum dot molecules
H. S. Borges, L. Sanz, J. M. Villas-Bôas, O. O. Diniz Neto, and A. M. Alcalde
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 20 March 2012
Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric
Rajib Rahman, Erik Nielsen, Richard P. Muller, and Malcolm S. Carroll
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 20 March 2012
Iterative summation of path integrals for nonequilibrium molecular quantum transport
R. Hützen, S. Weiss, M. Thorwart, and R. Egger
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 19 March 2012
Generalized conductivity model for polar semiconductors at terahertz frequencies
J. Lloyd-Hughes
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors
Kun You, Hong Jiang, Dabing Li, Xiaojuan Sun, Hang Song, Yiren Chen, Zhiming Li, Guoqing Miao, Hongbo Liu
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Time-reversal symmetry breaking phase in the Hubbard model: A variational cluster approach study
Xiancong Lu, Liviu Chioncel, and Enrico Arrigoni
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 19 March 2012
InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
O. Laboutin, Y. Cao, W. Johnson, R. Wang, G. Li, D. Jena, H. Xing
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
A. Asgari, L. Faraone
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy
Jing-Jing Li, Xinyu Liu, Shi Liu, Shumin Wang, David J. Smith, Ding Ding, Shane R. Johnson, Jacek K. Furdyna, Yong-Hang Zhang
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Tunable quantum spin Hall effect in double quantum wells
Paolo Michetti, Jan C. Budich, Elena G. Novik, and Patrik Recher
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 19 March 2012
Polarization fluctuation dominated electrical transport processes of polymer-based ferroelectric field effect transistors
Satyaprasad P Senanayak, S. Guha, and K. S. Narayan
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 19 March 2012
Spontaneous emission control of single quantum dots in bottom-up nanowire waveguides
Gabriele Bulgarini, Michael E. Reimer, Tilman Zehender, Moïra Hocevar, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Valery Zwiller
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Highly uniform periodic inverse quantum dots arrays
N. L. Dias, A. Garg, U. Reddy, U. Choi, J. J. Coleman
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Long-lived, room-temperature electron spin coherence in colloidal CdS quantum dots
D. H. Feng, X. Li, T. Q. Jia, X. Q. Pan, Z. R. Sun, Z. Z. Xu
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Oxygen-vacancy and depth-dependent violet double-peak photoluminescence from ultrathin cuboid SnO2 nanocrystals
L. Z. Liu, X. L. Wu, J. Q. Xu, T. H. Li, J. C. Shen, Paul K. Chu
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Electronic states and photoluminescence of TiO2 nanotubes with adsorbed surface oxygen
L. Z. Liu, W. Xu, X. L. Wu, Y. Y. Zhang, T. H. Chen, Paul K. Chu
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Evidence for different origins of the magnetic field effect on current and electroluminescence in organic light-emitting diodes
Andreas Buchschuster, Tobias D. Schmidt, Wolfgang Brütting
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Shallow donors and deep level color centers in AlN single crystals: EPR, ODMR and optical studies
V. A. Soltamov, I. V. Ilyin, A. A. Soltamova, D. O. Tolmachev, N. G. Romanov, A. S. Gurin, E. N. Mokhov and P. G. Baranov
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Surface electronic properties of In-rich InGaN alloys grown by MOCVD
W. M. Linhart, Ö. Tuna, T. D. Veal, J. J. Mudd, C. Giesen, M. Heuken and C. F. McConville
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy
Anja Eisenhardt, Georg Eichapfel, Marcel Himmerlich, Andreas Knübel, Thorsten Passow, Chunyu Wang, Fouad Benkhelifa, Rolf Aidam and Stefan Krischok
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions
Pawel Kempisty, Pawel Strak and Stanislaw Krukowski
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Peculiarities of galvanomagnetic effects in GaN epilayers and GaN/InGaN quantum wells
P. Malinovskis, A. Mekys, A. Kadys, T. Malinauskas, T. Grinys, V. Bikbajevas, R. Tomašiūnas and J. Storasta
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Effect of hole injection in AlGaN/GaN HEMT with GIT structure by numerical simulation
Hiroshi Chonan, Toshihide Ide, Xu-Qiang Shen and Mitsuaki Shimizu
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Large magneto-optical effect in low-temperature-grown GaCrN and GaCrN:Si
Y. K. Zhou, P. H. Fan, S. Emura, S. Hasegawa and H. Asahi
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Growth and optical properties of gadolinium aluminum nitride thin films
Yigang Chen, Xiaolei Shi, Jing Yang and Yiner Chen
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Responsivity and photocurrent dynamics in single GaN nanowires
F. González-Posada, R. Songmuang, M. Den Hertog and E. Monroy
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors
Sidi Ould Saad Hamady
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures
Saurabh Pandey, Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Low loss EEL spectroscopy performed on InxAl1-xN layers grown by MOVPE: comparison between experiment and ab-initio calculations
A. Letrouit, S. Kret, F. Ivaldi, J. F. Carlin, N. A. K. Kaufman, N. Grandjean and J. Górecka
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Investigation of the properties of In-related alloys by AFM
Albert Minj, Daniela Cavalcoli and Anna Cavallini
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate
Xueliang Zhu, Jun Ma, Tongde Huang, Ming Li, Ka Ming Wong and Kei May Lau
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Study of CF4 plasma treatment in drift region optimization of high-voltage GaN MOSC-HEMTs
Zhongda Li, Jie Zhang and T. Paul Chow
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate
T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka and Y. Mori
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs
Shenghou Liu, Yong Cai, Rumin Gong, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Jingjing Wang, Jiayun Yin, Cheng P. Wen, Hua Qin and Baoshun Zhang
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Distribution of built-in electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN thicknesses
M. Gladysiewicz and R. Kudrawiec
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer
Tetsuya Fujiwara, Stacia Keller, James S. Speck, Steven P. DenBaars and Umesh K. Mishra
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs
D. J. Meyer, D. S. Katzer, R. Bass, N. Y. Garces, M. G. Ancona, D. A. Deen, D. F. Storm and S. C. Binari
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT
Kota Ohi and Tamotsu Hashizume
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Peter Brückner, R. Kiefer, C. Haupt, A. Leuther, S. Müller, R. Quay, D. Schwantuschke, M. Mikulla and O. Ambacher
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Reduction of peak electric field strength in GaN-HEMT with carbon doping layer
Tetsuo Narita, Daigo Kikuta, Hiroko Iguchi, Kenji Ito, Kazuyoshi Tomita, Tsutomu Uesugi and Tetsu Kachi
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.-M. Lamy, M. Akhter, P. P. Maaskant, E. Frayssinet, P. de Mierry and J.-Y. Duboz
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Effective surface passivation of AlGaN/GaN heterostructures by using PH3 plasma treatment and HfO2 dielectric
Chunfu Zhang, Yue Hao and Qian Feng
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs
Stefanie Linkohr, Wilfried Pletschen, Lutz Kirste, Marcel Himmerlich, Pierre Lorenz, Stefan Krischok, Vladimir Polyakov, Stefan Müller, Oliver Ambacher and Volker Cimalla
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors
Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane
M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen and D. W. E. Allsopp
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures
Saurabh Pandey, Beatrice Fraboni, Daniela Cavalcoli, Albert Minj and Anna Cavallini
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
M. Mattalah, A. Soltani, J.-C. Gerbedoen, Az. Ahaitouf, N. Defrance, Y. Cordier and J.-C. De Jaeger
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Electromodulation spectroscopy of optical transitions and electric field distribution in GaN/AlGaN/GaN transistor heterostructures with various AlGaN layer thicknesses
R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, M. Siekacz, G. Cywinski, P. Wolny and C. Skierbiszewski
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
Stefanie Linkohr, Wilfried Pletschen, Vladimir Polyakov, Marcel Himmerlich, Pierre Lorenz, Stefan Krischok, Lutz Kirste, Stefan Müller, Oliver Ambacher and Volker Cimalla
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template
Xingbin Li, Tongjun Yu, Yuebin Tao, Junjing Deng, Chenglong Xu and Guoyi Zhang
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Sequential tunneling transport in GaN/AlGaN quantum cascade structures
Faisal F. Sudradjat, Wei Zhang, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David J. Smith, Theodore D. Moustakas and Roberto Paiella
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
InGaN/GaN quantum wells grown on freestanding HfO2 photonic crystals
Yongjin Wang, Tong Wu, Fangren Hu, Hongbo Zhu and Kazuhiro Hane
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells
O. Kopylov, R. Shirazi, O. Svensk, S. Suihkonen, S. Sintonen, M. Sopanen and B. E. Kardynał
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Optical polarization and anisotropic gain characteristics in semipolar and nonpolar InGaN quantum well lasers
Atsushi A. Yamaguchi and Kazunobu Kojima
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
The influence of inhomogeneities on broadening of fundamental transition in polar and nonpolar InGaN quantum wells dedicated for green emitters
Marta Gladysiewicz and Robert Kudrawiec
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs
Tong-Ho Kim, Maria Losurdo, Soojeong Choi, Inho Yoon, Giovanni Bruno and April Brown
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Fabrication of site-controlled InGaN quantum dots using reactive-ion etching
Leung Kway Lee and P.-C. Ku
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Self-assembled m -plane InGaN quantum dots: formation and shape evolution
Xuelin Yang, Munetaka Arita, Satoshi Kako and Yasuhiko Arakawa
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Characterization of single semiconductor nanowires by synchrotron radiation nanoprobe
J. Segura-Ruiz, G. Martinez-Criado, M. H. Chu, R. Tucoulou, M. Gomez-Gomez and N. Garro
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Growth of InGaN nanowires on a (111)Si substrate by RF-MBE
Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Growth of InN quantum dots by droplet epitaxy and their characterization
D. Krishnamurthy, S. Hasegawa, S. N. M. Tawil, S. Emura and H. Asahi
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties
A. Molina-Sánchez, J. Segura-Ruiz, N. Garro, A. García-Cristóbal, A. Cantarero, F. Iikawa, C. Denker, J. Malindretos and A. Rizzi
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Investigation of the optical properties of InGaN/GaN nanorods with different indium composition
Q. Wang, J. Bai, Y. P. Gong and T. Wang
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Fabrication and properties of etched GaN nanorods
Philip Shields, Maxime Hugues, Jesus Zúñiga-Pérez, Mike Cooke, Mark Dineen, Wang Wang, Federica Causa and Duncan Allsopp
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells
M. J. Kappers, T. J. Badcock, R. Hao, M. A. Moram, S. Hammersley, P. Dawson and C. J. Humphreys
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs
Christopher C. S. Chan, Philip A. Shields, Mark J. Holmes, YiDing Zhuang, Xu Wang, Benjamin P. L. Reid, HeeDae Kim, Duncan W. E. Allsopp and Robert A. Taylor
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
L. Schade, U. T. Schwarz, T. Wernicke, S. Ploch, M. Weyers and M. Kneissl
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Photoluminescence changes in n-type GaN samples after photoelectrochemical treatment
Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh and Takafumi Yao
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD
Jianping Zeng, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Shuaishuai Sun and Ye Tao
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure
Mohamed Almokhtar, Shuichi Emura, Yi Kai Zhou, Shigehiko Hasegawa and Hajime Asahi
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Broadening of photoluminescence for inhomogeneous polar and non-polar InGaN/GaN quantum wells
Marta Gladysiewicz and Robert Kudrawiec
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Martin Mikulics, Hilde Hardtdegen, Andreas Winden, Alfred Fox, Michel Marso, Zdeněk Sofer, Hans Lüth, Detlev Grützmacher and Peter Kordoš
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
Daniel H. Rich, Ofer Moshe, Benjamin Damilano and Jean Massies
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Suppression of defect-related luminescence in laser-annealed InGaN epilayers
G. Tamulaitis, D. Dobrovolskas, J. Mickevičius, V. Kazlauskienė, J. Miškinis, E. Kuokštis, P. Onufrijevs, A. Medvids, J.-J. Huang, C.-Y. Chen, C.-H. Liao and C. C. Yang
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Growth and structural, optical and electrical properties study of bulk GaN
D. Gogova, G. Rudko and D. Siche
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates
James Tweedie, Ramón Collazo, Anthony Rice, Seiji Mita, Jinqiao Xie, Rajiv-Christer Akouala and Zlatko Sitar
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions
Woo Jin Ha, Sameer Chhajed, Ashonita Chavan, Jae-Hoon Lee, Ki-Se Kim and Jong Kyu Kim
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time
Yue-Ming Hsin, Tsung-Yu Ke, Geng-Yen Lee, Jen-Inn Chyi and Hsien-Chin Chiu
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Normally-off AlGaN/GaN power tunnel-junction FETs
Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou and Kevin J. Chen
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
High threshold voltage normally-off GaN MISFETs using self-alignment technique
Shinya Taguchi, Kazuya Hasegawa, Kazuki Nomoto and Tohru Nakamura
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage
Casey Kirkpatrick, Bongmook Lee, YoungHwan Choi, Alex Huang and Veena Misra
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
Bongmook Lee, Casey Kirkpatrick, Young-hwan Choi, Xiangyu Yang, Alex Q. Huang and Veena Misra
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices
Thomas Marron, Shinya Takashima, Zhongda Li and T. Paul Chow
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Effect of post-gate RTA on leakage current (Ioff) in GaN MOSHEMTs
Tongde Huang, Ka Ming Wong, Ming Li, Xueliang Zhu and Kei May Lau
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement
Sen Huang, Shu Yang, John Roberts and Kevin J. Chen
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Electrical properties of MBE grown Si3N4–cubic GaN MIS structures
A. Zado, K. Lischka and D. J. As
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Topological Surface States in Lead-Based Ternary Telluride Pb(Bi1-xSbx)2Te4
S. Souma, K. Eto, M. Nomura, K. Nakayama, T. Sato, T. Takahashi, Kouji Segawa, and Yoichi Ando
Phys. Rev. Lett., Vol: 108, No: 11 , published: 16 March 2012
Subband Structure of a Two-Dimensional Electron Gas Formed at the Polar Surface of the Strong Spin-Orbit Perovskite KTaO3
P. D. C. King, R. H. He, T. Eknapakul, P. Buaphet, S.-K. Mo, Y. Kaneko, S. Harashima, Y. Hikita, M. S. Bahramy, C. Bell, Z. Hussain, Y. Tokura, Z.-X. Shen, H. Y. Hwang, F. Baumberger, and W. Meevasana
Phys. Rev. Lett., Vol: 108, No: 11 , published: 16 March 2012
Three-sublattice order in the SU(3) Heisenberg model on the square and triangular lattice
Bela Bauer, Philippe Corboz, Andreas M. Läuchli, Laura Messio, Karlo Penc, Matthias Troyer, and Frédéric Mila
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 16 March 2012
Ferromagnetism and nonlocal correlations in the Hubbard model
S. Henning and W. Nolting
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 16 March 2012
Quasiparticle and optical spectroscopy of the organic semiconductors pentacene and PTCDA from first principles
Sahar Sharifzadeh, Ariel Biller, Leeor Kronik, and Jeffrey B. Neaton
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 16 March 2012
Polaron master equation theory of the quantum-dot Mollow triplet in a semiconductor cavity-QED system
C. Roy and S. Hughes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 16 March 2012
Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot
O. Makarovsky, E. E. Vdovin, A. Patané, L. Eaves, M. N. Makhonin, A. I. Tartakovskii, and M. Hopkinson
Phys. Rev. Lett., Vol: 108, No: 11 , published: 16 March 2012
Photoemission Spectroscopy of Magnetic and Nonmagnetic Impurities on the Surface of the Bi2Se3 Topological Insulator
T. Valla, Z.-H. Pan, D. Gardner, Y. S. Lee, and S. Chu
Phys. Rev. Lett., Vol: 108, No: 11 , published: 16 March 2012
Structural properties and quasiparticle band structures of Cu-based quaternary semiconductors for photovoltaic applications
Yubo Zhang, Xiudong Sun, Peihong Zhang, Xun Yuan, Fuqiang Huang, Wenqing Zhang
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure
Pengyu Long, Hao Tong, and Xiangshui Miao
Appl. Phys. Express, Vol: 5, No: 3 , published: 15 March 2012
Photoluminescence Investigation of Defects and Optical Band Gap in Multiferroic BiFeO3 Single Crystals
Reda Moubah, Guy Schmerber, Olivier Rousseau, Dorothée Colson, and Michel Viret
Appl. Phys. Express, Vol: 5, No: 3 , published: 15 March 2012
Influence of oxygen vacancy on the electronic structure of CaCu3Ti4O12 and its deep-level vacancy trap states by first-principle calculation
H. B. Xiao, C. P. Yang, C. Huang, L. F. Xu, D. W. Shi, V. V. Marchenkov, I. V. Medvedeva, K. Bärner
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer
M. V. Ponomarev, K. Sharma, M. A. Verheijen, M. C. M. van de Sanden, M. Creatore
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Correlation effects on a topological insulator at finite temperatures
Tsuneya Yoshida, Satoshi Fujimoto, and Norio Kawakami
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 15 March 2012
Atomistic modeling of electron-phonon interaction and electron mobility in Si nanowires
Y. Yamada, H. Tsuchiya, M. Ogawa
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Integrability in anyonic quantum spin chains via a composite height model
Paata Kakashvili and Eddy Ardonne
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 15 March 2012
Improved Thermoelectric Properties in Lu-doped Yb14MnSb11 Zintl Compounds
Cui Yu, Yi Chen, Hanhui Xie, G. Jeffrey Snyder, Chenguang Fu, Jinshu Xu, Xinbing Zhao, and Tiejun Zhu
Appl. Phys. Express, Vol: 5, No: 3 , published: 15 March 2012
Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline
Peijian Zhang, Yang Meng, Ziyu Liu, Dong Li, Tao Su, Qingyu Meng, Qi Mao, Xinyu Pan, Dongmin Chen, Hongwu Zhao
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Improvements of the thermoelectric properties of PbTe via simultaneous doping with indium and iodine
Mykhailo Guch, Cheriyedath Raj Sankar, James R. Salvador, Gregory P. Meisner, Holger Kleinke
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Electronic properties of W-encapsulated Si cluster film on Si (100) substrates
S. J. Park, N. Uchida, T. Tada, T. Kanayama
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
R. Oliva, J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Serafinczuk, O. Martínez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, L. Artús
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects
Suk-Kyu Ryu, Qiu Zhao, Michael Hecker, Ho-Young Son, Kwang-Yoo Byun, Jay Im, Paul S. Ho, Rui Huang
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct quantum-confined Stark effect
Marko Stölzel, Johannes Kupper, Matthias Brandt, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Extracting reliable electronic properties from transmission spectra of indium tin oxide thin films and nanocrystal films by careful application of the Drude theory
Rueben J. Mendelsberg, Guillermo Garcia, Delia J. Milliron
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Correlation between oxygen stoichiometry, structure, and opto-electrical properties in amorphous In2O3:H films
Takashi Koida, Hajime Shibata, Michio Kondo, Koichi Tsutsumi, Akio Sakaguchi, Michio Suzuki, Hiroyuki Fujiwara
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Effects of low temperature anneals on the photovoltage in Si nanocrystals
O. Korotchenkov, A. Podolian, V. Kuryliuk, B. Romanyuk, V. Melnik, I. Khatsevich
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
X. Li, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. C. Hsu, A. Matulionis
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms
R. Kudrawiec, M. Syperek, M. Latkowska, J. Misiewicz, V.-M. Korpijärvi, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, M. Pessa
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Impedance model of trap states for characterization of organic semiconductor devices
L. Burtone, D. Ray, K. Leo, M. Riede
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
Farid Medjdoub, Damien Ducatteau, Malek Zegaoui, Bertrand Grimbert, Nathalie Rolland, and Paul-Alain Rolland
Appl. Phys. Express, Vol: 5, No: 3 , published: 15 March 2012
Magnetic field effects on the linear and nonlinear optical properties of coaxial cylindrical quantum well wires
M. J. Karimi and G. Rezaei
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Influence of acoustic phonons on the optical control of quantum dots driven by adiabatic rapid passage
S. Lüker, K. Gawarecki, D. E. Reiter, A. Grodecka-Grad, V. M. Axt, P. Machnikowski, and T. Kuhn
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 15 March 2012
Electronic structures in a CdSe spherical quantum dot in a magnetic field: Diagonalization method and variational method
Shudong Wu and Li Wan
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Determining the location and cause of unintentional quantum dots in a nanowire
Ted Thorbeck and Neil M. Zimmerman
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots
Ł. Dusanowski, G. Sęk, A. Musiał, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, A. Forchel
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Polarization anisotropic luminescence of tunable single lateral quantum dot molecules
C. Hermannstädter, M. Witzany, M. Heldmaier, R. Hafenbrak, K. D. Jöns, G. J. Beirne, P. Michler
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
N. Modi, L. Tsybeskov, J.-M. Baribeau, X. Wu, D. J. Lockwood
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Electroforming and Ohmic contacts in Al-Al2O3-Ag diodes
T. W. Hickmott
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces
R. A. Kraya and L. Y. Kraya
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal–Oxide–Semiconductor Diodes with Yb Donor Layer
Younguk Song, Hiroshi Ishiwara, and Shun-ichiro Ohmi
Appl. Phys. Express, Vol: 5, No: 3 , published: 15 March 2012
Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication
Can Zhang, Feng Yan, Bernhard C. Bayer, Raoul Blume, Marleen H. van der Veen, Rongsi Xie, Guofang Zhong, Bingan Chen, Axel Knop-Gericke, Robert Schlögl, Bernard D. Capraro, Stephan Hofmann, John Robertson
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Ge/SiGe heterostructures as emitters of polarized electrons
F. Bottegoni, A. Ferrari, G. Isella, S. Cecchi, M. Marcon, D. Chrastina, G. Trezzi, F. Ciccacci
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Dimerization-induced spin-charge coupling in one-dimensional Mott insulators revealed by femtosecond reflection spectroscopy of Rb-tetracyanoquinodimethane salts
H. Uemura, N. Maeshima, K. Yonemitsu, and H. Okamoto
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 14 March 2012
Resonant Rayleigh scattering as a probe of spin polarization in a two-dimensional electron system
L. V. Kulik, K. Ovchinnikov, A. S. Zhuravlev, V. E. Bisti, I. V. Kukushkin, S. Schmult, and W. Dietsche
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 14 March 2012
Mechanism for p-type conduction in polycrystalline indium oxide films
Jolanta Stankiewicz, María Pilar Lozano, and Francisco Villuendas
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 14 March 2012
Theoretical investigation of the inverse Faraday effect via a stimulated Raman scattering process
Daria Popova, Andreas Bringer, and Stefan Blügel
Phys. Rev. B: Condens. Matter, Vol: 85, No: 9 , published: 14 March 2012
Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells
Asaf Albo, Dan Fekete, and Gad Bahir
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 14 March 2012
Nature of defects and gap states in GeTe model phase change materials
B. Huang and J. Robertson
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 13 March 2012
Optical dielectric functions of wurtzite III-V semiconductors
Amrit De and Craig E. Pryor
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 13 March 2012
Optical phonon modes in ordered core-shell CdSe/CdS nanorod arrays
Andrea Giugni, Gobind Das, Alessandro Alabastri, Remo Proietti Zaccaria, Marco Zanella, Isabella Franchini, Enzo Di Fabrizio, and Roman Krahne
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 12 March 2012
Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients
V. Quemener, L. Vines, E. V. Monakhov, B. G. Svensson
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Optical bistability in a quantum dots/micropillar device with a quality factor exceeding 200 000
Christophe Arnold, Vivien Loo, Aristide Lemaître, Isabelle Sagnes, Olivier Krebs, Paul Voisin, Pascale Senellart, Loïc Lanco
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Metal enhanced photoluminescence from Al-capped ZnMgO films: The roles of plasmonic coupling and non-radiative recombination
Yanjie Wang, Haiping He, Yalin Zhang, Luwei Sun, Liang Hu, Kewei Wu, Jingyun Huang, Zhizhen Ye
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor
A. P. Wijnheijmer, X. Martí, V. Holý, M. Cukr, V. Novák, T. Jungwirth, P. M. Koenraad
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy
Jong Hoon Shin, Young Je Jo, Kwang-Choong Kim, T. Jang, Kyu Sang Kim
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
C. Hodges, N. Killat, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, M. Kuball
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm2)
Yi-Che Lee, Yun Zhang, Zachary M. Lochner, Hee-Jin Kim, Jae-Hyun Ryou, Russell D. Dupuis and Shyh-Chiang Shen
Phys. Status Solidi A, Vol: 209, No: 3 , published: 12 March 2012
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda and Hiroshi Amano
Phys. Status Solidi A, Vol: 209, No: 3 , published: 12 March 2012
Role of anisotropy in the Förster energy transfer from a semiconductor quantum well to an organic crystalline overlayer
S. Kawka and G. C. La Rocca
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 12 March 2012
Electrical circuit model of arrays of resonant elements
V. Lomanets, O. Zhuromskyy, G. Onishchukov, and U. Peschel
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 12 March 2012
Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3
Y. Tanaka, K. Nakayama, S. Souma, T. Sato, N. Xu, P. Zhang, P. Richard, H. Ding, Y. Suzuki, P. Das, K. Kadowaki, and T. Takahashi
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 12 March 2012
Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain
C. Robert, M. Perrin, C. Cornet, J. Even, J. M. Jancu
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate
Tomonari Shioda, Hisashi Yoshida, Koichi Tachibana, Naoharu Sugiyama and Shinya Nunoue
Phys. Status Solidi A, Vol: 209, No: 3 , published: 12 March 2012
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
K. Y. Lai, T. Paskova, V. D. Wheeler, T. Y. Chung, J. A. Grenko, M. A. L. Johnson, K. Udwary, E. A. Preble and K. R. Evans
Phys. Status Solidi A, Vol: 209, No: 3 , published: 12 March 2012
Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking
I. A. Yugova, M. M. Glazov, D. R. Yakovlev, A. A. Sokolova, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 12 March 2012
Quantitative absorption spectra of quantum wires measured by analysis of attenuated internal emissions
Masahiro Yoshita, Takayuki Okada, Hidefumi Akiyama, Makoto Okano, Toshiyuki Ihara, Loren N. Pfeiffer, Ken W. West
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots
Kazutaka Nishikawa, Yasuhiko Takeda, Tomoyoshi Motohiro, Daisuke Sato, Junya Ota, Naoya Miyashita, Yoshitaka Okada
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Field emission from single-crystalline HfC nanowires
Jinshi Yuan, Han Zhang, Jie Tang, Norio Shinya, Kiyomi Nakajima, Lu-Chang Qin
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Tuning of mid-infrared emission of ternary PbSrTe/CdTe quantum dots
A. Hochreiner, S. Kriechbaumer, T. Schwarzl, H. Groiss, M. Hassan, G. Springholz
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Terahertz electroluminescence from 6Н-SiC structures with natural superlattice
V. I. Sankin, A. V. Andrianov, A. O. Zakhar`in, A. G. Petrov
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN–GaN intermediate layer
Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang and San Lein Wu
Phys. Status Solidi A, Vol: 209, No: 3 , published: 12 March 2012
Charge depletion in organic heterojunction
T. W. Ng, M. F. Lo, S. T. Lee, C. S. Lee
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors
M. Ťapajna, J. Kuzmík
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
An approach to temperature-insensitive band gap – The InGaGdN case
Shuichi Emura, Siti-Nooraya Mohd-Tawil, Daivasigamani Krishnamurthy and Hajime Asahi
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
An approach to temperature-insensitive band gap – The InGaGdN case
Shuichi Emura, Siti-Nooraya Mohd-Tawil, Daivasigamani Krishnamurthy and Hajime Asahi
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Coherent manipulation of quadrupole biexcitons in cuprous oxide by 2D femtosecond spectroscopy
Oleksiy Roslyak, Upali Aparajita, Joseph L. Birman,  Shaul Mukamel
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Excitonic states and their wave functions in anisotropic materials: A computation using the finite-element method and its application to AlN
Bernard Gil, Didier Felbacq, Brahim Guizal, Guy Bouchitté
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphire
T. J. Badcock, M. J. Kappers, M. A. Moram, R. Hao, P. Dawson and C. J. Humphreys
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Coherent manipulation of quadrupole biexcitons in cuprous oxide by 2D femtosecond spectroscopy
Oleksiy Roslyak, Upali Aparajita, Joseph L. Birman, Shaul Mukamel
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Excitonic states and their wave functions in anisotropic materials: A computation using the finite-element method and its application to AlN
Bernard Gil, Didier Felbacq, Brahim Guizal and Guy Bouchitté
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphire
T. J. Badcock, M. J. Kappers, M. A. Moram, R. Hao, P. Dawson and C. J. Humphreys
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
Benjamin Neuschl, Klaus Thonke, Martin Feneberg, Seiji Mita, Jinqiao Xie, Rafael Dalmau, Ramón Collazo and Zlatko Sitar
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Zinc related defects in ZnO nanorods
Anastasios Travlos, Nikolaos Boukos and Chrysoula Chandrinou
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
On the T2 trap in zinc oxide thin films
Matthias Schmidt, Martin Ellguth, Robert Karsthof, Holger v. Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer and Francis C. C. Ling
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
Benjamin Neuschl, Klaus Thonke, Martin Feneberg, Seiji Mita, Jinqiao Xie, Rafael Dalmau, Ramón Collazo and Zlatko Sitar
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Zinc related defects in ZnO nanorods
Anastasios Travlos, Nikolaos Boukos and Chrysoula Chandrinou
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
On the T2 trap in zinc oxide thin films
Matthias Schmidt, Martin Ellguth, Robert Karsthof, Holger v. Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer and Francis C. C. Ling
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes
Li Zhang
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes
Li Zhang
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Dielectric function and bowing parameters of InGaN alloys
E. Sakalauskas, Ö. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch and R. Goldhahn
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Dielectric function and bowing parameters of InGaN alloys
E. Sakalauskas, Ö. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch and R. Goldhahn
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Hybrid photovoltaic cells based on ZnO/Sb2S3/P3HT heterojunctions
C. P. Liu, H. E. Wang, T. W. Ng, Z. H. Chen, W. F. Zhang, C. Yan, Y. B. Tang, I. Bello, L. Martinu, W. J. Zhang and S. K. Jha
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Hybrid photovoltaic cells based on ZnO/Sb2S3/P3HT heterojunctions
C. P. Liu, H. E. Wang, T. W. Ng, Z. H. Chen, W. F. Zhang, C. Yan, Y. B. Tang, I. Bello, L. Martinu, W. J. Zhang and S. K. Jha
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Carrier recombination processes in In-polar and N-polar p-type InN films
Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, Xinqian Wang, Kazuhide Kusakabe, Akihiko Yoshikawa
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Carrier recombination processes in In-polar and N-polar p-type InN films
Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, Xinqian Wang, Kazuhide Kusakabe and Akihiko Yoshikawa
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Semipolar GaInN quantum well structures on large area substrates
Ferdinand Scholz, Stephan Schwaiger, Jürgen Däubler, Ingo Tischer, Klaus Thonke, Silvio Neugebauer, Sebastian Metzner, Frank Bertram, Jürgen Christen, Holger Lengner, Johannes Thalmair, Josef Zweck
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Dielectric function and bowing parameters of InGaN alloys
E. Sakalauskas, Ö. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch and R. Goldhahn
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Semipolar GaInN quantum well structures on large area substrates
Ferdinand Scholz, Stephan Schwaiger, Jürgen Däubler, Ingo Tischer, Klaus Thonke, Silvio Neugebauer, Sebastian Metzner, Frank Bertram, Jürgen Christen, Holger Lengner, Johannes Thalmair and Josef Zweck
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Lateral charge carrier diffusion in InGaN quantum wells
J. Danhof, H.-M. Solowan, U. T. Schwarz, A. Kaneta, Y. Kawakami, D. Schiavon, T. Meyer and M. Peter
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
High quality factor photonic resonators for nitride quantum dots
T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury, P. Boucaud
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Ground state switching in InGaN/GaN quantum dot molecules
Stefan Schulz and Eoin P. O'Reilly
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Piezoelectric properties of zinc blende quantum dots
S. Schulz, M. A. Caro, E. P. O'Reilly and O. Marquardt
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
High quality factor photonic resonators for nitride quantum dots
T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Ground state switching in InGaN/GaN quantum dot molecules
Stefan Schulz and Eoin P. O'Reilly
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Piezoelectric properties of zinc blende quantum dots
S. Schulz, M. A. Caro, E. P. O'Reilly and O. Marquardt
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells
T. Suski, G. Staszczak, S. P. Łepkowski, P. Perlin, R. Czernecki, I. Grzegory, M. Funato, Y. Kawakami
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
J. Danhof, U. T. Schwarz, T. Meyer, C. Vierheilig and M. Peter
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells
T. Suski, G. Staszczak, S. P. Łepkowski, P. Perlin, R. Czernecki, I. Grzegory, M. Funato and Y. Kawakami
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
J. Danhof, U. T. Schwarz, T. Meyer, C. Vierheilig and M. Peter
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
The field emission of Cu-doped ZnO
Fan Ye, Xing-Min Cai, Fu-Ping Dai, Shou-Yong Jing, Dong-Ping Zhang, Ping Fan and Li-Jun Liu
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
The field emission of Cu-doped ZnO
Fan Ye, Xing-Min Cai, Fu-Ping Dai, Shou-Yong Jing, Dong-Ping Zhang, Ping Fan and Li-Jun Liu
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Electrooptic Properties of Submonolayer Polydiacetylene Nanoparticle Film Probed by Surface Plasmon Resonance Spectroscopy
Daisuke Tanaka, Oki Kuraishi, Koji Ozaki, and Kotaro Kajikawa
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
Rui Masuda, Chih-Wei Hsu, Martin Eriksson, Yoshinao Kumagai, Akinori Koukitu,  Per-Olof Holtz
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal
Abdessattar Bouzid, Jun-Bum Park, Se Min Kim, and Sung Moon
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment
Taehyeon Kwon, Woojin Park, Minhyeok Choe, Jongwon Yoon, Sangsu Park, Sangchul Lee, Hyunsang Hwang, and Takhee Lee
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
Photoluminescence Study of Defect Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide
Xiaohui Liu, Chika Fujiwara, Xiaoming Dou, Shigefusa F. Chichibu,  Mutsumi Sugiyama
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier
Dong-Seok Kim, Ki-Sik Im, Hee-Sung Kang, Ki-Won Kim, Sung-Bum Bae, Jae-Kyoung Mun, Eun-Soo Nam, and Jung-Hee Lee
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
TiO2-SnO2:F interfacial electronic structure investigated by soft x-ray absorption spectroscopy
Coleman X. Kronawitter, Mukes Kapilashrami, Jonathan R. Bakke, Stacey F. Bent, Cheng-Hao Chuang, Way-Faung Pong, Jinghua Guo, Lionel Vayssieres, and Samuel S. Mao
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 09 March 2012
Electron-hole pair condensation at the semimetal-semiconductor transition: A BCS-BEC crossover scenario
B. Zenker, D. Ihle, F. X. Bronold, and H. Fehske
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 09 March 2012
Charge Transport in Charge-Ordered States of Two-Dimensional Organic Conductors, α-(BEDT-TTF)2I3 and α'-(BEDT-TTF)2IBr2
Kota Kodama,Motoi Kimata,Yamaguchi Takahide,Nobuyuki Kurita,Atsushi Harada,Hidetaka Satsukawa,Taichi Terashima,Shinya Uji,Kaoru Yamamoto,Kyuya Yakushi
J. Phys. Soc. Jpn., Vol: 81, No: 4 , published: 09 March 2012
ltrastrong Coupling Regime and Plasmon Polaritons in Parabolic Semiconductor Quantum Wells
Markus Geiser, Fabrizio Castellano, Giacomo Scalari, Mattias Beck, Laurent Nevou, and Jérôme Faist
Phys. Rev. Lett., Vol: 108, No: 10 , published: 09 March 2012
Highly Confined Spin-Polarized Two-Dimensional Electron Gas in SrTiO3/SrRuO3 Superlattices
Marcos Verissimo-Alves, Pablo García-Fernández, Daniel I. Bilc, Philippe Ghosez, and Javier Junquera
Phys. Rev. Lett., Vol: 108, No: 10 , published: 09 March 2012
Excited-state spectroscopy of single lateral self-assembled InGaAs quantum dot molecules
M. Heldmaier, M. Seible, C. Hermannstädter, M. Witzany, R. Roßbach, M. Jetter, P. Michler, L. Wang, A. Rastelli, and O. G. Schmidt
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 09 March 2012
Robust and disorder-immune magnetically tunable one-way waveguides in a gyromagnetic photonic crystal
Jin Lian, Jin-Xin Fu, Lin Gan, and Zhi-Yuan Li
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 09 March 2012
Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot
J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, and R. J. Warburton
Phys. Rev. Lett., Vol: 108, No: 10 , published: 09 March 2012
Theoretical model obtained in momentum space for charge transport in a system consisting of noninteracting polarons
F. Marsusi and J. Sabbaghzadeh
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 08 March 2012
Radiative coupling and weak lasing of exciton-polariton condensates
I. L. Aleiner, B. L. Altshuler, and Y. G. Rubo
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 08 March 2012
Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies
A. Kaminska, C.-G. Ma, M. G. Brik, A. Kozanecki, M. Boćkowski, E. Alves and A. Suchocki
J. Phys.: Condens. Matter. , Vol: 24, No: 9 , published: 07 March 2012
Quantum theory of intersubband polarons
Simone De Liberato and Cristiano Ciuti
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 07 March 2012
A metallic surface state with uniaxial spin polarization on Tl/Ge(111)-(1 × 1)
Y. Ohtsubo, S. Hatta, H. Okuyama and T. Aruga
J. Phys.: Condens. Matter. , Vol: 24, No: 9 , published: 07 March 2012
Electronic stabilization of the Si(111)5  ×  2–Au surface: Pb and Si adatoms
A. Stȩpniak, M. Krawiec, G. Zawadzki and M. Jałochowsk
J. Phys.: Condens. Matter. , Vol: 24, No: 9 , published: 07 March 2012
Degenerate electronic structure of reconstructed MnSi1.7 nanowires on Si(001)
H. J. Liu, J. H. G. Owen and K. Miki
J. Phys.: Condens. Matter. , Vol: 24, No: 9 , published: 07 March 2012
The presence of a (1 × 1) oxygen overlayer on ZnO(0001) surfaces and at Schottky interfaces
Christian M. Schlepütz, Yongsoo Yang, Naji S. Husseini, Robert Heinhold, Hyung-Suk Kim, Martin W. Allen, Steven M. Durbin and Roy Clarke
J. Phys.: Condens. Matter. , Vol: 24, No: 9 , published: 07 March 2012
Exactly soluble model of resonant energy transfer between molecules
C. King, B. Barbiellini, D. Moser, and V. Renugopalakrishnan
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 07 March 2012
Interaction correction to the conductivity of two-dimensional electron gas in InxGa1−xAs/InP quantum well structure with strong spin-orbit coupling
G. M. Minkov, A. V. Germanenko, O. E. Rut, and A. A. Sherstobitov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 07 March 2012
Stationary soliton solutions for large adiabatic Holstein polaron in magnetic field in anisotropic solids
Ž. Pržulj, Z. Ivić, D. Kapor and J. Tekić
Eur. Phys. J. B , Vol: 85, No: 3 , published: 06 March 2012
Transport and thermodynamic properties of a 2DEG in the presence of tilted magnetic field: the influence of Dresselhauss interaction
T.F.A. Alves, A.C.A. Ramos, G.A. Farias, R.N. Costa Filho and N.S. Almeida
Eur. Phys. J. B , Vol: 85, No: 3 , published: 06 March 2012
Plasmon-polariton emission from a coherently p-excited quantum dot near a metal interface
C. Sanchez-Munoz, A. Gonzalez-Tudela, and C. Tejedor
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 06 March 2012
One-dimensional physics in transition-metal nanowires: Renormalization group and bosonization analysis
Jun-ichi Okamoto and A. J. Millis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 06 March 2012
Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer
J. Munguía, J.-M. Bluet, O. Marty, G. Bremond, M. Mermoux, D. Rouchon
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Lone conduction band in Cu2ZnSnSe4
Levent Gütay, Alex Redinger, Rabie Djemour, Susanne Siebentritt
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack
Xiaolei Wang, Kai Han, Wenwu Wang, Hong Yang, Jing Zhang, Xueli Ma, Jinjuan Xiang, Dapeng Chen, Tianchun Ye
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy
Kazushi Hayashi, Aya Hino, Shinya Morita, Satoshi Yasuno, Hiroshi Okada, Toshihiro Kugimiya
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence of Nd-doped SnO2 thin films
H. Rinnert, P. Miska, M. Vergnat, G. Schmerber, S. Colis, A. Dinia, D. Muller, G. Ferblantier, A. Slaoui
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Simultaneous enhancement of charge transport and exciton diffusion in single-crystal-like organic semiconductors
Jianbing Yang, Feng Zhu, Bo Yu, Haibo Wang, Donghang Yan
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Hong Sio, Oleg A. Kirillov, Curt A. Richter, N. V. Nguyen
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Control of coherent acoustic phonon generation with external bias in InGaN/GaN multiple quantum wells
C. S. Kim, J. H. Kim, H. Jeong, Y. D. Jho, H. K. Kwon, H. S. Lee, J. S. Park, K. Song, S. H. Kim, Y. J. Kim, D. Lee, K. J. Yee
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
Zhengping Jiang, Neerav Kharche, Timothy Boykin, Gerhard Klimeck
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Fermi-level pinning can determine polarity in semiconductor nanorods
Philip W. Avraam, Nicholas D. M. Hine, Paul Tangney, and Peter D. Haynes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 11 , published: 05 March 2012
Near-infrared photoluminescence from ZnO
Mingsong Wang, Yajun Zhou, Yiping Zhang, Eui Jung Kim, Sung Hong Hahn, Seung Gie Seong
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
S. Yang, C. C. Kuo, W.-R. Liu, B. H. Lin, H.-C. Hsu, C.-H. Hsu, W. F. Hsieh
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence of Nd-doped SnO2 thin films
H. Rinnert, P. Miska, M. Vergnat, G. Schmerber, S. Colis, A. Dinia, D. Muller, G. Ferblantier, A. Slaoui
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes
Zhifeng Shi, Xiaochuan Xia, Wei Yin, Shikai Zhang, Hui Wang, Jin Wang, Long Zhao, Xin Dong, Baolin Zhang, Guotong Du
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
High brightness alternating current electroluminescence with organic light emitting material
Ajay Perumal, Björn Lüssem, Karl Leo
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance
Seok-Ho Song, Hyun-Ho Yang, Chang-Hoon Han, Seung-Deok Ko, Seok-Hee Lee, Jun-Bo Yoon
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
Liyang Zhang, Kai Cheng, Hu Liang, Ruben Lieten, Maarten Leys, Gustaaf Borghs
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 03 March 2012
Surface plasmons at composite surfaces with diffusive charges
B. Horovitz and C. Henkel
Europhys. Lett. , Vol: 97, No: 5 , published: 02 March 2012
Effect of magnetic field on electron transport in HgTe/CdTe quantum wells: Numerical analysis
Jiang-chai Chen, Jian Wang, and Qing-feng Sun
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 02 March 2012
Strain and x-ray diffraction from axial nanowire heterostructures
V. M. Kaganer and A. Yu. Belov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 12 , published: 02 March 2012
An ab-initio study of (Mn,Al) doped ZnO including strong correlation effects
Pages 1095-1097
Physica E, Vol: 44, No: 6 , published: 01 March 2012
Investigation of defect states in heavily dislocated thin silicon films
T. Mchedlidze and M. Kittler
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Analytical model for reduction of deep levels in SiC by thermal oxidation
Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Bias-enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
Kuang-Yau Teng, Huang-Chin Chen, Gaung-Chin Tzeng, Chen-Yau Tang, Hsiu-Fung Cheng, I-Nan Lin
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature
Elangovan Elamurugu, Parthiban Shanmugam, Gonçalo Gonçalves, Nuno Franco, Eduardo Alves, Rodrigo Martins and Elvira Fortunato
Europhys. Lett. , Vol: 97, No: 3 , published: 01 March 2012
Phonon heat conduction in AlxGa1-xN
Saswati Barman, Arnab Ganguly and Anjan Barman
Europhys. Lett. , Vol: 97, No: 3 , published: 01 March 2012
Enhancement of thermoelectric efficiency and violation of the Wiedemann-Franz law due to Fano effect
G. Gómez-Silva, O. Ávalos-Ovando, M. L. Ladrón de Guevara, P. A. Orellana
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Thermopower of atomic-sized würtzite AlN wires
Pages 1092-1094
Physica E, Vol: 44, No: 6 , published: 01 March 2012
Optimum strain configurations for carrier injection in near infrared Ge lasers
O. Aldaghri, Z. Ikonić, R. W. Kelsall
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon
Michael Kessler, Tobias Ohrdes, Pietro P. Altermatt, Rolf Brendel
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates
Yong Zhao, Joon Hwan Lee, Yanhan Zhu, M. Nazari, Changhong Chen, Haiyan Wang, Ayrton Bernussi, Mark Holtz, Zhaoyang Fan
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Optical absorption of charged excitons in semiconducting carbon nanotubes
Pages 936-939
Physica E, Vol: 44, No: 6 , published: 01 March 2012
Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials
K. M. F. Shahil, M. Z. Hossain, V. Goyal, A. A. Balandin
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation
A. A. González-Fernández, J. Juvert, Alfredo Morales-Sánchez, Jorge Barreto, M. Aceves-Mijares, C. Domínguez
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Elliptically polarized harmonic emission in a quantum dot
Yan Xie, Suqing Duan, Wei Zhang, Jing Chen, Weidong Chu
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Investigating minority carrier trapping in n-type Cz silicon by transient photoconductance measurements
Yu Hu, Hendrik Schøn, Øyvind Nielsen, Eivind Johannes Øvrelid, Lars Arnberg
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities
I. Shlimak, A. Butenko, D. I. Golosov, K.-J. Friedland and S. V. Kravchenko
Europhys. Lett. , Vol: 97, No: 3 , published: 01 March 2012
Formation of AsxSb1−x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
Li-Gong Li, Shu-Man Liu, Shuai Luo, Tao Yang, Li-Jun Wang, Feng-Qi Liu, Xiao-Ling Ye, Bo Xu and Zhan-Guo Wang
Europhys. Lett. , Vol: 97, No: 3 , published: 01 March 2012
Nitrogen δ-doping for band engineering of GaAs-related quantum structures
Fumitaro Ishikawa, Shinichiro Furuse, Kengo Sumiya, Akihiro Kinoshita, Masato Morifuji
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Electric field effects on reduced effective masses of minibands at the mini-Brillouin-zone center and edge in a GaAs/AlAs superlattice
M. Nakayama and T. Kawabata
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field
X. M. Dou, B. Q. Sun, D. S. Jiang, H. Q. Ni, Z. C. Niu
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Spin accumulation in parallel-coupled quantum dots driven by a symmetric dipolar spin battery
Cui Jiang, Wei-Jiang Gong, Yisong Zheng
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Tunable spin manipulation in a quantum dot embedded in an Aharonov-Bohm interferometer
Cui Jiang, Wei-Jiang Gong, Guo-Zhu Wei
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Electronic and structural properties of InAs/InP core/shell nanowires: A first principles study
Cláudia L. dos Santos and Paulo Piquini
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Piezoelectricity in zincblende polar semiconductor nanowires: A theoretical study
Banani Sen, Michael Stroscio, Mitra Dutta
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Forming delocalized intermediate states with realistic quantum dots
W. M. Reid, T. Driscoll, M. F. Doty
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Fabrication of ZnO nanowires and nanorods
Pages 1062-1065
Physica E, Vol: 44, No: 6 , published: 01 March 2012
Ion beam-induced bending of silicon nanowires
Pages 1074-1077
Physica E, Vol: 44, No: 6 , published: 01 March 2012
Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures
H. Long, T. J. Yu, L. Liu, Z. J. Yang, H. Fang, G. Y. Zhang
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
H. J. Haugan, G. J. Brown, S. Elhamri, S. Pacley, B. V. Olson, T. F. Boggess
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Effects of oxidization and deoxidization on charge-propagation dynamics in rare-earth-doped titanium dioxide with room-temperature luminescence
Masashi Ishii, Brian Towlson, Nigel Poolton, Susumu Harako, Xinwei Zhao, Shuji Komuro, Bruce Hamilton
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon
Junzhuan Wang, Linwei Yu, Sergey Abolmasov, Ka Hyun Kim, Pere Roca i Cabarrocas
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height
V. G. Bozhkov and A. V. Shmargunov
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
A sintered nanoparticle p-n junction observed by a Seebeck microscan
A. Becker, G. Schierning, R. Theissmann, M. Meseth, N. Benson, R. Schmechel, D. Schwesig, N. Petermann, H. Wiggers, P. Ziolkowski
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors
Xiao Sun, Clement Merckling, Guy Brammertz, Dennis Lin, Johan Dekoster, Sharon Cui, T. P. Ma
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Terahertz generation by quantum-dot miniband superlattices in the absence of electric field domains
C. Wang and J. C. Cao
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Hybrid functional study of band structures of GaAs1−xNx and GaSb1−xNx alloys
Ville Virkkala, Ville Havu, Filip Tuomisto, and Martti J. Puska
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 29 February 2012
Phonon and electron-hole plasma effects on binding energiesof excitons in wurtzite GaN/InxGa1−xN quantum wells
J. Zhu, S.L. Ban, S.H. Ha
Eur. Phys. J. B , Vol: 85, No: 2 , published: 29 February 2012
Negative Bogoliubov dispersion in exciton-polariton condensates
Tim Byrnes, Tomoyuki Horikiri, Natsuko Ishida, Michael Fraser, and Yoshihisa Yamamoto
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 29 February 2012
Non-contact AFM
Franz J Giessibl and Seizo Morita
J. Phys.: Condens. Matter. , Vol: 24, No: 8 , published: 29 February 2012
Theoretical simulation of Kelvin probe force microscopy for Si surfaces by taking account of chemical forces
Masaru Tsukada, Akira Masago and Mamoru Shimizu
J. Phys.: Condens. Matter. , Vol: 24, No: 8 , published: 29 February 2012
Three-dimensional scanning force/tunneling spectroscopy at room temperature
Yoshiaki Sugimoto, Keiichi Ueda, Masayuki Abe and Seizo Morita
J. Phys.: Condens. Matter. , Vol: 24, No: 8 , published: 29 February 2012
Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias
A. Sweetman, R. Danza, S. Gangopadhyay and P. Moriarty
J. Phys.: Condens. Matter. , Vol: 24, No: 8 , published: 29 February 2012
Magneto-donors in laser-dressed inverse parabolic quantum wells
E.C. Niculescu
Eur. Phys. J. B , Vol: 85, No: 2 , published: 29 February 2012
Rashba and Dresselhaus spin-orbit interaction in semiconductor quantum wells
Y.F. Hao
Eur. Phys. J. B , Vol: 85, No: 2 , published: 29 February 2012
Multisubband transport and magnetic deflection of Fermi electron trajectories in three terminal junctions and rings
M. R. Poniedziałek and B. Szafran
J. Phys.: Condens. Matter. , Vol: 24, No: 8 , published: 29 February 2012
Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy
H. Sasakura, C. Hermannstädter, S. N. Dorenbos, N. Akopian, M. P. van Kouwen, J. Motohisa, Y. Kobayashi, H. Kumano, K. Kondo, K. Tomioka, T. Fukui, I. Suemune, and V. Zwiller
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 29 February 2012
Quasiparticle velocities in two-dimensional electron/hole liquids with spin-orbit coupling
D. Aasen, Stefano Chesi, and W. A. Coish
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 28 February 2012
Bi-induced p-type conductivity in nominally undoped Ga(AsBi)
G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, Xianfeng Lu, T. Tiedje
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Thermal transport in crystalline Si/Ge nano-composites: Atomistic simulations and microscopic models
Feng Hao, Daining Fang, Zhiping Xu
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Thermoelectric efficiency of nanowires with long-range surface disorder
Gursoy B. Akguc and Oguz Gülseren
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 27 February 2012
Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact
Takeo Minari, Peter Darmawan, Chuan Liu, Yun Li, Yong Xu, Kazuhito Tsukagoshi
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Excitonic diffusion dynamics in ZnO
H. Jeong, K. Min, S. Byun, C. J. Stanton, D. H. Reitze, J. K. Yoo, G. C. Yi, Y. D. Jho
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation
T. Lalinský, G. Vanko, M. Vallo, E. Dobročka, I. Rýger, A. Vincze
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
High room-temperature optical gain in Ga(NAsP)/Si heterostructures
N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, M. R. Hofmann
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Enhancement of light extraction efficiency by evanescent wave coupling effect in ridge-shaped AlGaInP/GaInP quantum wells
Guo-Dong Hao, Xue-Lun Wang
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells
K. Sasayama, S. Nakanishi, R. Yamaguchi, Y. Oyanagi, T. Ushimi, S. Gozu, T. Mozume, A. Tackeuchi
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
M. Griesbeck, M. M. Glazov, E. Ya. Sherman, D. Schuh, W. Wegscheider, C. Schüller, and T. Korn
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 27 February 2012
Microcavity enhanced single photon emission from an electrically driven site-controlled quantum dot
C. Schneider, T. Heindel, A. Huggenberger, T. A. Niederstrasser, S. Reitzenstein, A. Forchel, S. Höfling, M. Kamp
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Site-controlled InP/GaInP quantum dots emitting single photons in the red spectral range
Vasilij Baumann, Florian Stumpf, Christian Schneider, Stefan Kremling, Lukas Worschech, Alfred Forchel, Sven Höfling, Martin Kamp
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects
K. Schuh, S. Barthel, O. Marquardt, T. Hickel, J. Neugebauer, G. Czycholl, F. Jahnke
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
In-situ x-ray characterization of wurtzite formation in GaAs nanowires
Peter Krogstrup, Morten Hannibal Madsen, Wen Hu, Miwa Kozu, Yuka Nakata, Jesper Nygård, Masamitu Takahasi, Robert Feidenhans
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Lateral positioning of InGaAs quantum dots using a buried stressor
A. Strittmatter, A. Schliwa, J.-H. Schulze, T. D. Germann, A. Dreismann, O. Hitzemann, E. Stock, I. A. Ostapenko, S. Rodt, W. Unrau, U. W. Pohl, A. Hoffmann, D. Bimberg, V. Haisler
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
In situ multifrequency ferromagnetic resonance and x-ray magnetic circular dichroism investigations on Fe/GaAs(110): Enhanced g-factor
F. M. Römer, M. Möller, K. Wagner, L. Gathmann, R. Narkowicz, H. Zähres, B. R. Salles, P. Torelli, R. Meckenstock, J. Lindner, M. Farle
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides
J. B. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 27 February 2012
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
Roy B. Chung, Hung-Tse Chen, Chih-Chien Pan, Jun-Seok Ha, Steven P. DenBaars, Shuji Nakamura
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation
Farzan Gity, Ki Yeol Byun, Ko-Hsin Lee, Karim Cherkaoui, John M. Hayes, Alan P. Morrison, Cindy Colinge, Brian Corbett
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
A light emitting transistor based on a hybrid metal oxide-organic semiconductor lateral heterostructure
Zi-En Ooi, Thelese R. B. Foong, Samarendra P. Singh, Khai Leok Chan, Ananth Dodabalapur
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Экситонные состояния в квазинульмерных полупроводниковых наносистемах
Покутний С.И.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Определение энергии ионизации уровней ванадия в селениде цинка
Махний В.П., Кинзерская О.В.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Terahertz Response and Colossal Kerr Rotation from the Surface States of the Topological Insulator Bi2Se3
R. Valdés Aguilar, A. V. Stier, W. Liu, L. S. Bilbro, D. K. George, N. Bansal, L. Wu, J. Cerne, A. G. Markelz, S. Oh, and N. P. Armitage
Phys. Rev. Lett., Vol: 108, No: 8 , published: 24 February 2012
Явление обратного адсорбционного пьезоэлектрического эффекта в полупроводниковых материалах CdTe, CdHgTe
Федяева О.А.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Влияние дефектообразования при встраивании delta -слоя Mn на спектр фоточувствительности от квантовых ям InGaAs/GaAs
Горшков А.П., Карпович И.А., Павлова Е.Д., Калентьева И.Л.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Spin resonance in a quantum wire: Anomalous effects of an applied magnetic field
Ar. Abanov, V. L. Pokrovsky, W. M. Saslow, and P. Zhou
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 24 February 2012
Spin-Flip Limited Exciton Dephasing in CdSe/ZnS Colloidal Quantum Dots
Francesco Masia, Nicolò Accanto, Wolfgang Langbein, and Paola Borri
Phys. Rev. Lett., Vol: 108, No: 8 , published: 24 February 2012
Heat induced nanoforms of Zinc oxide quantum dots and their characterization
Dey Anindita, Basu Ruma, Das Sukhen, Nandy Papiya
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Особенности одновременной генерации через основное и возбужденное состояния в лазерах на квантовых точках
Жуков А.Е., Максимов М.В., Шерняков Ю.М., Лившиц Д.А., Савельев А.В., Зубов Ф.И., Клименко В.В.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Влияние отжига на люминесценцию кристаллов CuI p-типа проводимости
Грузинцев А.Н., Загороднев В.Н.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Влияние послеростовой термической обработки на структурные и оптические свойства InP/InAsP/InP нитевидных нанокристаллов
Цырлин Г.Э., Tchernycheva M., Patriarche G., Harmand J.-C.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Numerical simulation of optical feedback on a quantum dot lasers
Al-Khursan Amin H., Ghalib Basim Abdullattif, Al-Obaidi Sabri J.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Неравномерность пространственного распределения отрицательной люминесценции в фотодиодах на основе InAsSb(P) (длинноволновая граница lambda 0.1=5.2 мкм)
Карандашев С.А., Матвеев Б.А., Мжельский И.В., Половинкин В.Г., Ременный М.А., Рыбальченко А.Ю., Стусь Н.М.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Генерация терагерцового излучения поверхностным баллистическим фототоком при субпикосекундном лазерном возбуждении полупроводников
Зезюля П.А., Малевич В.Л., Манак И.С., Кроткус А.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Метод генерации электромагнитного излучения на основе нанотрубок при наличии постоянного электрического поля и поля электромагнитной волны
Садыков Н.Р., Скоркин Н.А.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Электронно-энергетический спектр в Pd-замещенных клатратных кристаллах на основе кремния
Борщ Н.А., Переславцева Н.С., Курганский С.И.
Физ. тверд. тела, Vol: 54, No: 2 , published: 23 February 2012
Термоэлектрические свойства твердых растворов p-Bi2-xSbxTe3
Овсянников С.В., Григорьева Ю.А., Воронцов Г.В., Лукьянова Л.Н., Кутасов В.А., Щенников В.В.
Физ. тверд. тела, Vol: 54, No: 2 , published: 23 February 2012
Модификация зеемановских состояний в магнитном поле и переход выстраивание-ориентация в излучении триплетных экситонов в селениде галлия
Старухин А.Н., Нельсон Д.К., Разбирин Б.С.
Физ. тверд. тела, Vol: 54, No: 2 , published: 23 February 2012
Stable magnetic monopoles in spinor polariton condensates
D. D. Solnyshkov, H. Flayac, and G. Malpuech
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 23 February 2012
" Левое" состояние и поляризационные характеристики волн в сверхрешетках " полупроводник-магнетик"
Афанасьев С.А., Санников Д.Г., Семенцов Д.И.
Физ. тверд. тела, Vol: 54, No: 2 , published: 23 February 2012
Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas
Srijit Goswami, M. A. Aamir, Christoph Siegert, Michael Pepper, Ian Farrer, David A. Ritchie, and Arindam Ghosh
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 23 February 2012
Free-carrier absorption in quantum cascade structures
F. Carosella, C. Ndebeka-Bandou, R. Ferreira, E. Dupont, K. Unterrainer, G. Strasser, A. Wacker, and G. Bastard
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 22 February 2012
Generalized path integral method for Elliott–Yafet spin relaxations in quantum wells and narrow wires
Jengjan Tsai and Cheng-Hung Chang
J. Phys.: Condens. Matter. , Vol: 24, No: 7 , published: 22 February 2012
First-principles description of anomalously low lattice thermal conductivity in thermoelectric Cu-Sb-Se ternary semiconductors
Yongsheng Zhang, Eric Skoug, Jeffrey Cain, Vidvuds Ozoliņš, Donald Morelli, and C. Wolverton
Phys. Rev. B: Condens. Matter, Vol: 85, No: 5 , published: 21 February 2012
Size effects on thermoelectricity in a strongly correlated oxide
J. Ravichandran, A. K. Yadav, W. Siemons, M. A. McGuire, V. Wu, A. Vailionis, A. Majumdar, and R. Ramesh
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 21 February 2012
Spin thermopower in interacting quantum dots
Tomaž Rejec, Rok Žitko, Jernej Mravlje, and Anton Ramšak
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 21 February 2012
Renormalization group approach to time-dependent transport through correlated quantum dots
D. M. Kennes, S. G. Jakobs, C. Karrasch, and V. Meden
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 21 February 2012
Theory of electronic properties and quantum spin blockade in a gated linear triple quantum dot with one electron spin each
Chang-Yu Hsieh, Yun-Pil Shim, and Pawel Hawrylak
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 21 February 2012
Phonon spectrum and bonding properties of Bi2Se3: Role of strong spin-orbit interaction
Bao-Tian Wang, Ping Zhang
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition
T. A. Henry, A. Armstrong, K. M. Kelchner, S. Nakamura, S. P. DenBaars, J. S. Speck
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Thermoelectric properties and structural variations in Bi2Te3−xSx crystals
W. Wong-Ng, H. Joress, J. Martin, P. Y. Zavalij, Y. Yan, J. Yang
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Near-resonant two-photon absorption in luminescent CdTe quantum dots
Jayakrishna Khatei, C. S. Suchand Sandeep, Reji Philip, K. S. R. Koteswara Rao
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Characterizing the charge collection efficiency in bulk heterojunction organic photovoltaic cells
Richa Pandey, Russell J. Holmes
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Solution doping of organic semiconductors using air-stable n-dopants
Yabing Qi, Swagat K. Mohapatra, Sang Bok Kim, Stephen Barlow, Seth R. Marder, Antoine Kahn
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
Guipeng Liu, Ju Wu, Guijuan Zhao, Shuman Liu, Wei Mao, Yue Hao, Changbo Liu, Shaoyan Yang, Xianglin Liu, Qinsheng Zhu, Zhanguo Wang
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
J. Mickevičius, J. Jurkevičius, K. Kazlauskas, A. Žukauskas, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, R. Gaska
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Interfacial chemistry in an InAs/GaSb superlattice studied by pulsed laser atom probe tomography
M. Müller, B. Gault, M. Field, G. J. Sullivan, G. D. W. Smith, C. R. M. Grovenor
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Interface nature of oxidized single-crystal arrays of etched Si nanowires on (100)Si
M. Jivanescu, A. Stesmans, R. Kurstjens, F. Dross
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors
Jong Tae Park, Jin Young Kim, Jean Pierre Colinge
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Optical observation of single-carrier charging in type-II quantum ring ensembles
R. J. Young, E. P. Smakman, A. M. Sanchez, P. Hodgson, P. M. Koenraad, M. Hayne
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Evaluation of deep levels in In0.53Ga0.47As and GaAs0.5Sb0.5 using low-frequency noise and RTS noise characterization
Wenjie Chen, Jinrong Yuan, Archie Holmes and Patrick Fay
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Impurity-band conduction in polycrystalline films of GaSb and GaSbAs grown by molecular-beam deposition
Y. Kajikawa and K. Okamura
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Transport and magnetotransport effects in indium antimonide doped with manganese within quasimetal-insulator transition
S. A. Obukhov
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
Pin Jern Ker, Andrew R. J. Marshall, John P. R. David and Chee Hing Tan
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Excitonic absorption on AlGaAs/GaAs superlattice solar cells
Jiro Nishinaga, Atsushi Kawaharazuka, Koji Onomitsu, Klaus H. Ploog and Yoshiji Horikoshi
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells
T. Mozume and S. Gozu
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors
Wei-Hsun Lin, Chi-Che Tseng, Shung-Yi Wu, Meng-Hsun Wu, Shih-Yen Lin and Meng-Chyi Wu
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Self-assembled InGaAs/GaAs quantum dot photodetector on germanium substrate
Sreetama Banerjee, Nilanjan Halder and Subhananda Chakrabarti
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer
Yuta Koreeda, Yutaka Endo, Kouichi Sato, Kenya Yoshizawa, Yui Nishio, Hirohisa Taguchi, Tsutomu Iida and Yoshifumi Takanashi
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
InGaAs HEMTs with T-gate electrodes fabricated using HMDS SiN mold
Tomohiro Yoshida, Keisuke Akagawa, Taiichi Otsuji and Tetsuya Suemitsu
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Numerical analysis of short-gate GaN HEMTs with Fe-doped buffer layers
Mayumi Hirose, Yoshiharu Takada and Kunio Tsuda
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
31 GHz power characteristics of GaN HEMTs with slightly etched AlGaN layer at ohmic contact
Mayumi Hirose, Yoshiharu Takada, Keiichi Matsushita, Kazutaka Takagi and Kunio Tsuda
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
High carrier concentration in high Al-composition AlGaN-channnel HEMTs
Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Norimasa Yafune, Keiichi Sakuno, Hirokuni Tokuda, Masaaki Kuzuhara, Kenichiro Takeda, Motoaki Iwaya and Hiroshi Amano
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
R. Driad, R. Schmidt, L. Kirste, R. Loesch, M. Mikulla and O. Ambacher
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Fabrication of ridge-shaped AlGaInP/GaInP quantum well structure for observation of evanescent wave coupling effect
Guo-Dong Hao, JongUk Seo and Xue-Lun Wang
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Substrate removal of dual-colour InAs/GaSb superlattice focal plane arrays
Robert Rehm, Martin Walther, Johannes Schmitz, Matthias Wauro, Wolfgang Luppold, Jasmin Niemasz, Frank Rutz, Andreas Wörl, Jan-Michael Masur, Lutz Kirste, Ralf Scheibner, Joachim Wendler and Johann Ziegler
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Stefan Fringes, Christian Volk, Bernat Terrés, Jan Dauber, Stephan Engels, Stefan Trellenkamp and Christoph Stampfer
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
Sepideh Gorji Ghalamestani, Sofia Johansson, B. Mattias Borg, Kimberly A. Dick and Lars-Erik Wernersson
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy
Y. Y. Liang, S. F. Yoon, C. Y. Ngo, W. K. Loke and E. A. Fitzgerald
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
InAs/GaAs quantum dots for THz generation
N. S. Daghestani, M. A. Cataluna, G. Berry, G. Ross and M. J. Rose
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh-rate molecular beam epitaxial growth technique
Fumihiko Tanoue, Hiroharu Sugawara, Kouichi Akahane and Naokatsu Yamamoto
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Comparison of InAs nanowire conductivity: influence of growth method and structure
Kamil Sladek, Andreas Winden, Stephan Wirths, Karl Weis, Christian Blömers, Önder Gül, Thomas Grap, Steffi Lenk, Martina von der Ahe, Thomas E. Weirich, Hilde Hardtdegen, Mihail Ion Lepsa, Andrey Lysov, Zi-An Li, Werner Prost, Franz-Josef Tegude, Hans Lüth, Thomas Schäpers and Detlev Grützmacher
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K
T. Nowozin, A. Marent, D. Bimberg, A. Beckel, B. Marquardt, A. Lorke and M. Geller
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator
Naokatsu Yamamoto, Kouichi Akahane, Tetsuya Kawanishi, Redouane Katouf, Hideyuki Sotobayashi, Yuki Yoshioka and Hiroshi Takai
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Modelling of passive mode-locking in InAs quantum-dot lasers with tapered gain section
Mattia Rossetti, Tianhong Xu, Paolo Bardella and Ivo Montrosset
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts
Hubert J. Krenner, Stefan Völk, Florian J. R. Schülein, Florian Knall, Achim Wixforth, Dirk Reuter, Andreas D. Wieck, Hyochul Kim, Tuan A. Truong and Pierre M. Petroff
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy
J. Kasai, R. Akimoto, T. Hasama, H. Ishikawa, S. Fujisaki, S. Tanaka and S. Tsuji
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys
A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Near-field photoluminescence spectroscopy of CdTe/Cd0.75Mn0.25Te tilted superlattices
Yukihiro Harada, Takashi Kita, Kazunari Matsuda, Yoshihiko Kanemitsu and Henri Mariette
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers
Hanxue Zhao, Yoon Soon Fatt, Ngo Chun Yong and Rui Wang
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Improvement of yield ratio of ohmic contact to GaAs/AlGaAs heterostructure by application of SiO2 protective layer
Takehiko Oe, Kenjiro Matsuhiro, Taro Itatani, Sucheta Gorwadkar, Syogo Kiryu and Nobu-hisa Kaneko
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Spectroscopy of Single Donors at ZnO(0001) Surfaces
Hao Zheng, Jörg Kröger, and Richard Berndt
Phys. Rev. Lett., Vol: 108, No: 7 , published: 17 February 2012
Low hole polaron migration barrier in lithium peroxide
Shyue Ping Ong, Yifei Mo, and Gerbrand Ceder
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 17 February 2012
Second-Harmonic Generation Induced by Electric Currents in GaAs
Brian A. Ruzicka, Lalani K. Werake, Guowei Xu, Jacob B. Khurgin, E. Ya. Sherman, Judy Z. Wu, and Hui Zhao
Phys. Rev. Lett., Vol: 108, No: 7 , published: 17 February 2012
Scattering Phase of Quantum Dots: Emergence of Universal Behavior
Rafael A. Molina, Rodolfo A. Jalabert, Dietmar Weinmann, and Philippe Jacquod
Phys. Rev. Lett., Vol: 108, No: 7 , published: 17 February 2012
Hot-Carrier Effects in Short Channel (L = 1.5 μm) p-Type Polycrystalline Silicon Thin-Film Transistors
Sung-Hwan Choi, Yeon-Gon Mo, Hye-Dong Kim, and Min-Koo Han
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Correlation of 1/f Noise between Semiconductor Point Contacts with a Common Lead
Masakazu Yamagishi, Masayuki Hashisaka, Koji Muraki, and Toshimasa Fujisawa
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Tadao Ishibashi, and Satoshi Kodama
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Characteristics of Hot Hole Injection, Trapping, and Detrapping in Gate Oxide of Polycrystalline Silicon Thin-Film Transistors
Yoshinari Kamakura, Takashi Himukashi, Hiroshi Tsuji, and Kenji Taniguchi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors
Ming Hu, Takuya Yamane, and Toshiaki Tsuchiya
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
n-Type Nanocrystalline FeSi2/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering
Nathaporn Promros, Kyohei Yamashita, Chen Li, Kenji Kawai, Mahmoud Shaban, Toshihiro Okajima, and Tsuyoshi Yoshitake
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
Hideki Fukano, Hiroshi Egusa, Shuji Taue, Tomonari Sato, and Manabu Mitsuhara
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Highly Sensitive Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector with an Overlapping Control Gate
Joontaek Jung, Sung-Hyun Jo, Sang-Ho Seo, Myunghan Bae, and Jang-Kyoo Shin
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers
Romain Mentek, Bernard Gelloz, and Nobuyoshi Koshida
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
High-Performance Semitransparent Bulk-Heterojunction Organic Photovoltaics with Ag Interfacial Layer
Jeong In Han, Jun-Ki Park, and Sung Kyu Park
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation
Masashi Kato, Yoshinori Matsushita, Masaya Ichimura, Tomoaki Hatayama, and Takeshi Ohshima
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Boussairi Bouzazi, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Improved Performance of Pentacene Thin-Film Transistors with Al2O3 Gate Dielectric: Annealing Effect on the Surface Properties
Gun Woo Hyung, Jaehoon Park, Ja-Ryong Koo, Zhao-Hui Li, Sang Jik Kwon, Eou-Sik Cho, and Young Kwan Kim
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
InGaAs/InAlAs Multiple Quantum Well Mach–Zehnder Modulator with Single Microring Resonator
Hiroki Kaneshige, Yuta Ueyama, Hitoshi Yamada, Hideki Yajima, Taro Arakawa, and Yasuo Kokubun
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
Katsumasa Kamiya, Yasuhiro Ebihara, Makoto Kasu, and Kenji Shiraishi
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance
Meng-Chien Hsieh, Jia-Feng Wang, Yu-Shou Wang, Cheng-Hong Yang, Chen-Hao Chiang, and Jenn-Fang Chen
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
Kensuke Ota, Masumi Saitoh, Chika Tanaka, Yukio Nakabayashi, Ken Uchida, and Toshinori Numata
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources
Naokatsu Yamamoto, Kouichi Akahane, Tetsuya Kawanishi, Hideyuki Sotobayashi, Yuki Yoshioka, and Hiroshi Takai
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications
Mohammed A. Majid, Maxime Hugues, David T. D. Childs, and Richard A. Hogg
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate
Toshihiro Nakaoka, Yugo Tamura, Toshiyuki Miyazawa, Katsuyuki Watanabe, Yasutomo Ota, Satoshi Iwamoto, and Yasuhiko Arakawa
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Series-Coupled Triple Quantum Dot Molecules
Shinichi Amaha, Tsuyoshi Hatano, Wataru Izumida, Soichiro Teraoka, Keiji Ono, Kimitoshi Kono, Seigo Tarucha, Geof Aers, James Gupta, and Guy Austing
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Steady-State Solution for Dark States Using a Three-Level System in Coupled Quantum Dots
Tetsufumi Tanamoto, Keiji Ono, and Franco Nori
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Effects of Interface Grading on Electronic States in Columnar Type-II Quantum Dots
Takuya Kawazu
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure
Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, and Shunri Oda
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Fabrication and Characterization of InP Nanowire Light-Emitting Diodes
Satoshi Maeda, Katsuhiro Tomioka, Shinjiroh Hara, and Junichi Motohisa
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Singlet-triplet splitting in double quantum dots due to spin-orbit and hyperfine interactions
Dimitrije Stepanenko, Mark Rudner, Bertrand I. Halperin, and Daniel Loss
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 16 February 2012
Preparation and Luminescence Properties of Organic Phosphorescent Nanoparticles
Yousuke Miyashita, Shinichi Horino, Hitoshi Kasai, Hidetoshi Oikawa, and Hachiro Nakanishi
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects
Junichi Nakashima, Masataka Miyake, and Mitiko Miura-Mattausch
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Theory of Resonant Tunneling through a Donor State
Nobuya Mori, Amalia Patanè, and Laurence Eaves
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide
Kiyoshi Kato, Yutaka Shionoiri, Yusuke Sekine, Kazuma Furutani, Takehisa Hatano, Taro Aoki, Miyuki Sasaki, Hiroyuki Tomatsu, Jun Koyama, and Sunpei Yamazaki
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Device Analysis of Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistor Hydrogen Gas Sensors: Unintentional Oxygen Invasion into Ti Layers
Toshiyuki Usagawa and Yota Kikuchi
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Noise in Submicron Metal–Oxide–Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position
Vlasta Sedlakova, Josef Sikula, Milos Chvatal, Jan Pavelka, Munecazu Tacano, and Masato Toita
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
Anil Kumar, Tomoko Mizutani, and Toshiro Hiramoto
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile
Guohe Zhang, Kebin Chen, and Feng Liang
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors
Hong-Sik Shin, Se-Kyung Oh, Min-Ho Kang, Hyuk-Min Kwon, Jungwoo Oh, Prashant Majhi, Raj Jammy, Ga-Won Lee, and Hi-Deok Lee
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
New Performance Indicators of Metal–Oxide–Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design
Kosuke Katayama and Minoru Fujishima
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors
Ke Mao, Tomoko Mizutani, Anil Kumar, Takuya Saraya, and Toshiro Hiramoto
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Taekyung Oh, and Bongkoo Kang
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, and Osbert Cheng
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal–Oxide–Semiconductor Transistors
Kun-Ming Chen, Zong-Wen Mou, Hao-Chung Kuo, Chia-Sung Chiu, Bo-Yuan Chen, Wen-De Liu, Ming-Yi Chen, Yu-Chi Yang, Kai-Li Wang, and Guo-Wei Huang
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature
Nam-Hyun Lee, Hyung-wook Kim, and Bongkoo Kang
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Impact of Gate Poly Depletion on Evaluation of Channel Temperature in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Four-Point Gate Resistance Measurement Method
Nobuyasu Beppu, Tsunaki Takahashi, Teruyuki Ohashi, and Ken Uchida
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor
Hong-An Shih, Masahiro Kudo, Masashi Akabori, and Toshi-kazu Suzuki
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH3 Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Sumarlina Azzah Bte Suleiman and Sungjoo Lee
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
In0.53Ga0.47As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N+ Doped Regions for Leakage Suppression
Zhu Zhu, Xiao Gong, Ivana, and Yee-Chia Yeo
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel
Mitsuo Okamoto, Miwako Iijima, Takahiro Nagano, Kenji Fukuda, and Hajime Okumura
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal–Insulator–Semiconductor Structures
Masahiro Kudo, Hong-An Shih, Masashi Akabori, and Toshi-kazu Suzuki
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 2S , published: 16 February 2012
Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, A. T. Kalghatgi, and S. B. Krupanidhi
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
The structural, elastic and electronic properties of BiI3: First-principles calculations
Pages 735-739
Physica B, Vol: 407, No: 4 , published: 15 February 2012
First-principles study on electronic structures and magnetic properties of AlN nanosheets and nanoribbons
Chang-wen Zhang
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping
Giuliana Impellizzeri, Enrico Napolitani, Simona Boninelli, Vittorio Privitera, Trudo Clarysse, Wilfried Vandervorst, and Francesco Priolo
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon
Xuegong Yu, Lin Chen, Peng Chen, and Deren Yang
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material
Ramya Yeluri, Brian L. Swenson, Umesh K. Mishra
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Phonon thermal conductivity in silicon nanowires: The effects of surface roughness at low temperatures
Jung Hyun Oh, Mincheol Shin, Moon-Gyu Jang
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Finite size suppression of the weak field magnetoresistance of lightly phosphorous-doped silicon
Nicholas A. Porter, Christopher H. Marrows
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Thermoelectric effects through weakly coupled double quantum dots
Pages 765-769
Physica B, Vol: 407, No: 4 , published: 15 February 2012
Thermoelectric properties of Zn-doped GaSb
Chang-eun Kim, Ken Kurosaki, Hiroaki Muta, Yuji Ohishi, Shinsuke Yamanaka
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
High temperature thermoelectric properties of the type-I clathrate Ba8AuxSi46−x
C. Candolfi, U. Aydemir, M. Baitinger, N. Oeschler, F. Steglich, Yu . Grin
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
Satoshi Iba, Hidekazu Saito, Aurelie Spiesser, Suguru Watanabe, Ron Jansen, Shinji Yuasa, and Koji Ando
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Exciton transport in organic semiconductors: Förster resonance energy transfer compared with a simple random walk
K. Feron, X. Zhou, W. J. Belcher, P. C. Dastoor
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Investigation of micropipes in 6H–SiC by Raman scattering
Pages 670-673
Physica B, Vol: 407, No: 4 , published: 15 February 2012
SiGe superlattice nanocrystal infrared and Raman spectra: A density functional theory study
Mudar A. Abdulsattar
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Magneto-optical spectrum of ZnO nanorods
Wen Xiong
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
GaAsBi Photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths
Andrius Arlauskas, Polina Svidovsky, Klemensas Bertulis, Ramūnas Adomavičius, and Arūnas Krotkus
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
The impact of Ge codoping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal
Mukannan Arivanandhan, Raira Gotoh, Tatsuro Watahiki, Kozo Fujiwara, Yasuhiro Hayakawa, Satoshi Uda, Makoto Konagai
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Improved photovoltaic properties of a-Si/β-FeSi2/c-Si double heterojunction by Al-doping
Pages 756-758
Physica B, Vol: 407, No: 4 , published: 15 February 2012
Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs1−xSbx quantum dots
Kazutaka Nishikawa, Yasuhiko Takeda, Ken-ichi Yamanaka, Tomoyoshi Motohiro, Daisuke Sato, Junya Ota, Naoya Miyashita, Yoshitaka Okada
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Effect of interface alloying and band-alignment on the Auger recombination of heteronanocrystals
J. I. Climente, J. L. Movilla, J. Planelles
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Field-emission properties of individual GaN nanowires grown by chemical vapor deposition
Yongho Choi, Mario Michan, Jason L. Johnson, Ali Kashefian Naieni, Ant Ural, Alireza Nojeh
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN
Narihito Okada, Yoichi Yamada, Kazuyuki Tadatomo
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
N. Al Mustafa, R. Granzner, V. M. Polyakov, J. Racko, M. Mikolášek, J. Breza, F. Schwierz
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
Hiroshi Irie, Yuichi Harada, Hiroki Sugiyama, and Tatsushi Akazaki
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires
Alec M. Fischer, Kewei W. Sun, Fernando A. Ponce, Rudeesun Songmuang, and Eva Monroy
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Electrical Detection of Nuclear Magnetic Resonance Signal of Nuclear Spins of Order 104 in a Semiconductor Double Quantum Dot
Ryo Takahashi, Kimitoshi Kono, Seigo Tarucha, and Keiji Ono
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities
R. Kuszelewicz, J.-M. Benoit, S. Barbay, A. Lemaître, G. Patriarche, K. Meunier, A. Tierno, T. Ackemann
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Ground-state power quenching in two-state lasing quantum dot lasers
Mariangela Gioannini
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Fast electro-optics of a single self-assembled quantum dot in a charge-tunable device
Jonathan H. Prechtel, Paul A. Dalgarno, Robert H. Hadfield, Jamie McFarlane, Antonio Badolato, Pierre M. Petroff, Richard J. Warburton
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Charge transport in two different conductive polymer and semiconducting quantum dot nanocomposite systems
Sushmita Biswas, Yang Li, Michael A. Stroscio, Mitra Dutta
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
Spin-resolved polarized transport through a quasi one-dimensional mesoscopic quantum ring-shaped conductor with local Rashba spin–orbit interaction
Pages 674-680
Physica B, Vol: 407, No: 4 , published: 15 February 2012
Spin transport in a quantum ring in the presence of Rashba spin–orbit interaction using the S-matrix method
Farhang Fallah, Mahdi Esmaeilzadeh
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
White Polarized Electroluminescence Devices by Dye Deposition on Oriented Polyfluorene Films
Claire Heck, Toshiko Mizokuro, and Nobutaka Tanigaki
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors
Hai-Dang Trinh, Yueh-Chin Lin, Huan-Chung Wang, Chia-Hua Chang, Kuniyuki Kakushima, Hiroshi Iwai, Takamasa Kawanago, Yan-Gu Lin, Chi-Ming Chen, Yuen-Yee Wong, Guan-Ning Huang, Mantu Hudait, and Edward Yi Chang
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
Hisashi Saito and Yasuyuki Miyamoto
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs
Jenny Hu, H.-S. Philip Wong
J. Appl. Phys. , Vol: 111, No: 4 , published: 15 February 2012
A Possible New Parent Compound Sr4Al2O6Fe2As2 with High-TC Superconductivity
Yun-Li Zhang, Ji-Hua Zhang, Xiang-Ming Tao, and Ming-Qiu Tan
J. Phys. Soc. Jpn., Vol: 81, No: 2 , published: 14 February 2012
Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon
Zhi-Hui Wang, Wenxian Zhang, A. M. Tyryshkin, S. A. Lyon, J. W. Ager, E. E. Haller, and V. V. Dobrovitski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 14 February 2012
Thermoelectric three-terminal hopping transport through one-dimensional nanosystems
Jian-Hua Jiang, Ora Entin-Wohlman, and Yoseph Imry
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 14 February 2012
Electronic structure of ternary CdxZn1−xO (0 ≤ x ≤ 0.075) alloys
Henry Hung-Chun Lai, Vladimir L. Kuznetsov, Russell G. Egdell, Peter P. Edwards
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study
Wang Peng, F. Jabeen, B. Jusserand, J. C. Harmand, M. Bernard
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Multi-dimensional laser spectroscopy of exciton polaritons with spatial light modulators
P. Mai, B. Pressl, M. Sassermann, Z. Vörös, G. Weihs, C. Schneider, A. Löffler, S. Höfling, A. Forchel
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Atomic geometry and electron structure of the GaTe(102̅ ) surface
L. V. Yashina, R. Püttner, A. A. Volykhov, P. Stojanov, J. Riley, S. Yu. Vassiliev, A. N. Chaika, S. N. Dedyulin, M. E. Tamm, D. V. Vyalikh, and A. I. Belogorokhov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 13 February 2012
The effect of crystallite size on thermoelectric properties of bulk nanostructured magnesium silicide (Mg2Si) compounds
Nikhil Satyala, Daryoosh Vashaee
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Zero-field thermopower of a thin heterostructure membrane with a two-dimensional electron gas
M. Schmidt, G. Schneider, Ch. Heyn, A. Stemmann, and W. Hansen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 13 February 2012
Electronic transport in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films
L. R. Wienkes, C. Blackwell, J. Kakalios
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Optical properties of PbTe and PbSe
Chinedu E. Ekuma, David J. Singh, J. Moreno, and M. Jarrell
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 13 February 2012
Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3
Y. Kim, X. Chen, Z. Wang, J. Shi, I. Miotkowski, Y. P. Chen, P. A. Sharma, A. L. Lima Sharma, M. A. Hekmaty, Z. Jiang, D. Smirnov
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Нелинейно-оптические и структурные свойства нанокристаллических пленок карбида кремния
Бродин М.С.Волков В.И.Ляховецкий В.Р.Руденко В.И.Пузиков В.М.Семенов А.В.
Ж. эксперим. и теор. физ., Vol: 141, No: 2 , published: 13 February 2012
Properties of InxGa1−xN films in terahertz range
A. Gauthier-Brun, J. H. Teng, E. Dogheche, W. Liu, A. Gokarna, M. Tonouchi, S. J. Chua, D. Decoster
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Organic photovoltaic cells with nano-fabric heterojunction structure
June Hyoung Park, Austin R. Carter, Lynetta M. Mier, Chi-Yueh Kao, Sharlene A. M. Lewis, Raju P. Nandyala, Yong Min, Arthur J. Epstein
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Electric generation of vortices in polariton superfluids
H. Flayac, G. Pavlovic, M. A. Kaliteevski, and I. A. Shelykh
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 13 February 2012
Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
Tae-Soo Kim, Byung-Jun Ahn, Yanqun Dong, Ki-Nam Park, Jin-Gyu Lee, Youngboo Moon, Hwan-Kuk Yuh, Sung-Chul Choi, Jae-Hak Lee, Soon-Ku Hong, Jung-Hoon Song
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Understanding ultrafast carrier dynamics in single quasi-one-dimensional Si nanowires
M. A. Seo, S. A. Dayeh, P. C. Upadhya, J. A. Martinez, B. S. Swartzentruber, S. T. Picraux, A. J. Taylor, R. P. Prasankumar
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range
J. Pulka, T. Piwonski, G. Huyet, J. Houlihan, E. Semenova, A. Lematre, K. Merghem, A. Martinez, A. Ramdane
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
A statistical exploration of multiple exciton generation in silicon quantum dots and optoelectronic application
W. A. Su, W. Z. Shen
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector
T. Choi, T. Ihn, S. Schön, K. Ensslin
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Top-gated germanium nanowire quantum dots in a few-electron regime
Sung-Kwon Shin, Shaoyun Huang, Naoki Fukata, Koji Ishibashi
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys
SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Threading dislocation reduction in transit region of GaN terahertz Gunn diodes
Liang Li, Lin-An Yang, Jin-Cheng Zhang, Jun-Shuai Xue, Sheng-Rui Xu, Ling Lv, Yue Hao, Mu-Tong Niu
Appl. Phys. Lett. , Vol: 100, No: 7 , published: 13 February 2012
Резонансная фотоэмиссия и абсорбционная спектроскопия соединения Cux TiSe2
Шкварин А.С., Ярмошенко Ю.М., Скорикова Н.А., Титов А.А., Титов А.Н.
Ж. эксперим. и теор. физ., Vol: 141, No: 2 , published: 13 February 2012
Electronic-structure calculations of large cadmium chalcogenide nanoparticles
Johannes Frenzel,  Jan-Ole Joswig
Phys. Status Solidi B, Vol: 249, No: 2 , published: 11 February 2012
Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As
Jang-Ho Park, Ho-Yeon Seo, Sang-Hun Jeong and Byung-Teak Lee
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
Improving open-circuit voltage in DSSCs using Cu-doped TiO2 as a semiconductor
J. Navas, C. Fernández-Lorenzo, T. Aguilar, R. Alcántara and J. Martín-Calleja
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
Charge separation in organic semiconductor blends studied by electrical in situ characterization during film growth
Max Beu, André Dragässer, Christopher Keil and Derck Schlettwein
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics
Milan Ťapajna, Jose L. Jimenez and Martin Kuball
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition
W. G. Schmidt, S. Wippermann, S. Sanna, M. Babilon, N. J. Vollmers, U. Gerstmann
Phys. Status Solidi B, Vol: 249, No: 2 , published: 11 February 2012
Identification of defects at the interface between 3C-SiC quantum dots and a SiO2 embedding matrix
Márton Vörös, Adam Gali, Efthimios Kaxiras, Thomas Frauenheim, Jan M. Knaup
Phys. Status Solidi B, Vol: 249, No: 2 , published: 11 February 2012
Excited state properties of Si quantum dots
Rui-Qin Zhang, Abir De Sarkar, Thomas A. Niehaus, Thomas Frauenheim
Phys. Status Solidi B, Vol: 249, No: 2 , published: 11 February 2012
One-pot synthesis of homogeneous CdSexS1−x alloyed quantum dots with tunable composition in a green N-oleoylmorpholine solvent
Binbin Wang, Yang Jiang, Chao Liu, Xinzheng Lan, Xinmei Liu, Wenjun Wang, Hongyan Duan, Yugang Zhang, Shanying Li and Zhongping Zhang
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
Tunable electroluminescence from low-threshold voltage LED structure based on electrodeposited Zn1−xCdxO-nanorods/p-GaN heterojunction
Th. Pauporté, O. Lupan and B. Viana
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
Thermoelectric properties of the electron-doped perovskites Sr1−xCaxTi1−yNbyO3
J. Fukuyado, K. Narikiyo, M. Akaki, H. Kuwahara, and T. Okuda
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 10 February 2012
Frictionless Flow in a Binary Polariton Superfluid
E. Cancellieri, F. M. Marchetti, M. H. Szymańska, D. Sanvitto, and C. Tejedor
Phys. Rev. Lett., Vol: 108, No: 6 , published: 10 February 2012
Coherent Emission from a Disordered Organic Semiconductor Induced by Strong Coupling with Surface Plasmons
S. Aberra Guebrou, C. Symonds, E. Homeyer, J. C. Plenet, Yu. N. Gartstein, V. M. Agranovich, and J. Bellessa
Phys. Rev. Lett., Vol: 108, No: 6 , published: 10 February 2012
Resonant polaron-assisted tunneling of strongly interacting electrons through a single-level vibrating quantum dot
Gleb A. Skorobagatko
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 10 February 2012
Ground State of the Parallel Double Quantum Dot System
Rok Žitko, Jernej Mravlje, and Kristjan Haule
Phys. Rev. Lett., Vol: 108, No: 6 , published: 10 February 2012
Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy
Q. Zhang, J. Zhang, M. I. B. Utama, B. Peng, M. de la Mata, J. Arbiol, and Qihua Xiong
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 10 February 2012
Exciton binding energies in chalcopyrite semiconductors
Bernard Gil, Didier Felbacq, and Shigefusa F. Chichibu
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 08 February 2012
First principles study of phosphorus and boron substitutional defects in Si-XII
Brad D. Malone, Marvin L. Cohen
J. Phys.: Condens. Matter. , Vol: 24, No: 5 , published: 08 February 2012
Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer
V. Kuryliuk, O. Korotchenkov, and A. Cantarero
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 08 February 2012
Phase-dependent electron transport through a quantum wire on a surface
T. Kwapiński
J. Phys.: Condens. Matter. , Vol: 24, No: 5 , published: 08 February 2012
The role of the indirect tunneling processes and asymmetry in couplings in orbital Kondo transport through double quantum dots
Piotr Trocha
J. Phys.: Condens. Matter. , Vol: 24, No: 5 , published: 08 February 2012
Influence of Coulomb interaction on the Aharonov-Bohm effect in an electronic Fabry-Pérot interferometer
Stéphane Ngo Dinh and Dmitry A. Bagrets
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 08 February 2012
Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors
N. J. Harmon and M. E. Flatté
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 07 February 2012
Energy harvesting in semiconductor-insulator-semiconductor junctions through excitation of surface plasmon polaritons
A. K. Pradhan, Terence Holloway, Rajeh Mundle, Hareesh Dondapati, M. Bahoura
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Ionization of coherent excitons by strong terahertz fields
B. Ewers, N. S. Köster, R. Woscholski, M. Koch, S. Chatterjee, G. Khitrova, H. M. Gibbs, A. C. Klettke, M. Kira, and S. W. Koch
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 06 February 2012
Exciton acoustic-phonon coupling in single GaN/AlN quantum dots
Irina A. Ostapenko, Gerald Hönig, Sven Rodt, Andrei Schliwa, Axel Hoffmann, Dieter Bimberg, Matthias-René Dachner, Marten Richter, Andreas Knorr, Satoshi Kako, and Yasuhiko Arakawa
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 06 February 2012
Energy band engineering and controlled p‐type conductivity of CuAlO2 thin films by nonisovalent Cu‐O alloying
Z. Q. Yao, B. He, L. Zhang, C. Q. Zhuang, T. W. Ng, S. L. Liu, M. Vogel, A. Kumar, W. J. Zhang, C. S. Lee, S. T. Lee, X. Jiang
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
Pushpapraj Singh, Woo-Tae Park, Jianmin Miao, Lichun Shao, Rama Krishna Kotlanka, Dim-Lee Kwong
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Resonant modulational instability and self-induced transmission effects in semiconductors: Maxwell-Bloch formalism
Oleksii A. Smyrnov and Fabio Biancalana
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 06 February 2012
High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures
S.-L. Wang, J.-W. Yu, P.-C. Yeh, H.-W. Kuo, L.-H. Peng, A. A. Fedyanin, E. D. Mishina, A. S. Sigov
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, Siddharth Rajan
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
Emanuele Francesco Pecora, Wei Zhang, A. Yu. Nikiforov, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Semiconductor qubits based on fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures
Y. M. Kim, D. Sleiter, K. Sanaka, Y. Yamamoto, J. Meijer, K. Lischka, and A. Pawlis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 06 February 2012
Enhanced spontaneous emission from quantum dots in short photonic crystal waveguides
Thang Ba Hoang, Johannes Beetz, Leonardo Midolo, Matthias Skacel, Matthias Lermer, Martin Kamp, Sven Höfling, Laurent Balet, Nicolas Chauvin, Andrea Fiore
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Thermal and structural dependence of the band gap of quantum dots measured by a transparent film heater
Ju Yeon Woo, Suraj Kumar Tripathy, Kyungnam Kim, Chang-Soo Han
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer
N. Tsumori, M. Takahashi, R. Kubota, P. Regreny, M. Gendry, T. Saiki
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Resonantly enhanced optical nonlinearity in hybrid semiconductor quantum dot – metal nanoparticle structures
Ming Fu, Kai Wang, Hua Long, Guang Yang, Peixiang Lu, Frederik Hetsch, Andrei S. Susha, Andrey L. Rogach
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Room temperature single photon emission from an epitaxially grown quantum dot
O. Fedorych, C. Kruse, A. Ruban, D. Hommel, G. Bacher, T. Kümmell
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Single photon emission from InGaN/GaN quantum dots up to 50 K
Stefan Kremling, Christian Tessarek, Heiko Dartsch, Stephan Figge, Sven Höfling, Lukas Worschech, Carsten Kruse, Detlef Hommel, Alfred Forchel
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals
S. A. Dyakov, D. M. Zhigunov, A. Hartel, M. Zacharias, T. S. Perova, V. Yu. Timoshenko
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device
T. Omata, Y. Tani, S. Kobayashi, K. Takahashi, A. Miyanaga, Y. Maeda, S. Otsuka-Yao-Matsuo
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, H. X. Jiang
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing
Woo-Suhl Cho, Mathieu Luisier, Dheeraj Mohata, Suman Datta, David Pawlik, Sean L. Rommel, Gerhard Klimeck
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications
C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, E. Miranda
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices
Lior Kornblum, Boris Meyler, Catherine Cytermann, Svetlana Yofis, Joseph Salzman, Moshe Eizenberg
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
M. El Kazzi, L. Czornomaz, C. Rossel, C. Gerl, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Ultrafast pump-probe measurements of short small-polaron lifetimes in the mixed-valence perovskite Cs2Au2I6 under high pressures
M. Trigo, J. Chen, M. P. Jiang, W. L. Mao, S. C. Riggs, M. C. Shapiro, I. R. Fisher, and D. A. Reis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 03 February 2012
Large enhancement of thermoelectric effects in a double quantum dot system due to interference and Coulomb correlation phenomena
Piotr Trocha and Józef Barnaś
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 03 February 2012
Alloy and heterostructure architectures as promising tools for controlling electronic properties of semiconductor quantum dots
Roman Vaxenburg and Efrat Lifshitz
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 03 February 2012
Negative trion emission spectrum in stacked quantum dots: External electric field and valence band mixing
W. J. Pasek and B. Szafran
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 03 February 2012
Optically Gated Resonant Emission of Single Quantum Dots
H. S. Nguyen, G. Sallen, C. Voisin, Ph. Roussignol, C. Diederichs, and G. Cassabois
Phys. Rev. Lett., Vol: 108, No: 5 , published: 03 February 2012
Bloch-Wave Engineering of Quantum Dot Micropillars for Cavity Quantum Electrodynamics Experiments
M. Lermer, N. Gregersen, F. Dunzer, S. Reitzenstein, S. Höfling, J. Mørk, L. Worschech, M. Kamp, and A. Forchel
Phys. Rev. Lett., Vol: 108, No: 5 , published: 03 February 2012
Spontaneous emission spectra and quantum light-matter interactions from a strongly coupled quantum dot metal-nanoparticle system
C. Van Vlack, Philip Trøst Kristensen, and S. Hughes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 03 February 2012
Extracting E versus k effective band structure from supercell calculations on alloys and impurities
Voicu Popescu and Alex Zunger
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 02 February 2012
Time scales in the dynamics of an interacting quantum dot
L. Debora Contreras-Pulido, Janine Splettstoesser, Michele Governale, Jürgen König, and Markus Büttiker
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 02 February 2012
Charged states and band-gap narrowing in codoped ZnO nanowires for enhanced photoelectrochemical responses: Density functional first-principles calculations
Zhuo Xu, Qing-Rong Zheng, and Gang Su
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 02 February 2012
Resonance-hybrid states in a triple quantum dot
S. Amaha, T. Hatano, H. Tamura, S. Teraoka, T. Kubo, Y. Tokura, D. G. Austing, and S. Tarucha
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 02 February 2012
Structural and electronic properties of zinc blende BxAl1−xNyP1−y quaternary alloys via first-principle calculations
Pages 426-432
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study
Pages 515-518
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Electronic states and the resonant optical non-linearity of exciton in a narrow band InSb quantum dot
Pages 433-438
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well
Pages 528-532
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects
J. Kioseoglou, A. Lotsari, E. Kalesaki, G. P. Dimitrakopulos
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
Hannu-Pekka Komsa, Alfredo Pasquarello
J. Phys.: Condens. Matter. , Vol: 24, No: 4 , published: 01 February 2012
Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
A. Y. Polyakov, Lee-Woon Jang, Dong-Seob Jo, In-Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Kwang Hyeon Baik, Sung-Min Hwang
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Finite size effects of the surface states in a lattice model of topological insulator
Pages 885-890
Physica E, Vol: 44, No: 5 , published: 01 February 2012
Robust topological surface state against direct surface contamination
Pages 891-894
Physica E, Vol: 44, No: 5 , published: 01 February 2012
Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity (image)
Pages 917-920
Physica E, Vol: 44, No: 5 , published: 01 February 2012
Three-terminal thermoelectric transport under broken time-reversal symmetry
O. Entin-Wohlman and A. Aharony
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 01 February 2012
First principles study of Seebeck coefficients of doped semiconductors ZnTe1−xFx and ZnTe1−yNy
X. H. Yang
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Impact ionization in quantum well infrared photodetectors with different number of periods
Shan Dong, Ning Li, Sihai Chen, Xihui Liu, Wei Lu
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Influence of indium content on the optical, electrical and crystallization kinetics of Se100−xInxthin films deposited by flash evaporation technique
Pages 356-360
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Effect of impurity (Sb and Ag) incorporation on the a.c. conductivity and dielectric properties of a-Se70Te30 glassy alloy
Pages 457-463
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Dielectric function spectra and critical-point energies of Cu2ZnSnSe4 from 0.5 to 9.0 eV
S. G. Choi, H. Y. Zhao, C. Persson, C. L. Perkins, A. L. Donohue, B. To, A. G. Norman, J. Li, I. L. Repins
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study
Yu Fei Chan, Hai Jun Xu, Lei Cao, Ying Tang, De Yao Li, Xiao Ming Sun
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Interference effects on indium tin oxide enhanced Raman scattering
Yimin Yang, Teng Qiu, Fan Kong, Jiyang Fan, Huiling Ou, Qingyu Xu, Paul K. Chu
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Thermodynamic, Raman and electrical switching studies on Si15Te85-xAgx (4 ≤ x ≤ 20) glasses
Srinivasa Rao Gunti and Sundarrajan Asokan
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors
B. H. Hong, S. I. Rybchenko, I. E. Itskevich, S. K. Haywood, C. H. Tan, P. Vines, M. Hugues
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations
D. Lackner, M. Steger, M. L. W. Thewalt, O. J. Pitts, Y. T. Cherng, S. P. Watkins, E. Plis, S. Krishna
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Photogalvanic in ultrathin film of topological insulator
Pages 895-899
Physica E, Vol: 44, No: 5 , published: 01 February 2012
Effect of nickel contamination on high carrier lifetime n-type crystalline silicon
Yohan Yoon, Bijaya Paudyal, Jinwoo Kim, Young-Woo Ok, Prashant Kulshreshtha, Steve Johnston, George Rozgonyi
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN
P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J.-D. Ganière, N. Grandjean, B. Deveaud-Plédran
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Scanning tunneling microscopy studies of topological insulators
Pages 912-916
Physica E, Vol: 44, No: 5 , published: 01 February 2012
Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates
Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin, Ta-Chun Cho, Ming Huang
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Rashba spin splitting in the Al0.3Ga0.7N/GaN heterostructure under uniaxial strain
Pages 352-355
Physica B, Vol: 407, No: 3 , published: 01 February 2012
InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers
Adam H. Blake, Derek Caselli, Christopher Durot, Jason Mueller, Eduardo Parra, Joseph Gilgen, Allison Boley, David J. Smith, Ignatius S. T. Tsong, John C. Roberts, Edwin Piner, Kevin Linthicum, James W. Cook, Jr., Daniel D. Koleske, Mary H. Crawford, et al.
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots
M. Molas, K. Gołasa, K. Kuldová, J. Borysiuk, A. Babiński, J. Lapointe, Z. R. Wasilewski
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures
U. Manna, I. C. Noyan, Q. Zhang, I. F. Salakhutdinov, K. A. Dunn, S. W. Novak, R. Moug, M. C. Tamargo, G. F. Neumark, I. L. Kuskovsky
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Circulating currents in a metallic ring with two quantum dots
E. V. Anda, G. Chiappe, E. Louis
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
The size and diffusion effect of gold on silicon nanowire sidewall faceting
Deok-Won Seo, Gil-Sung Kim, Chan-Yang Lee, Seung-Yong Lee, Jung-Hwan Hyung, Chel-Jong Choi, Sang-Kwon Lee
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Semiconductor core-shell quantum dot: A low temperature nano-sensor material
Saikat Chattopadhyay, Pratima Sen, Joseph Thomas Andrews, Pranay Kumar Sen
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Optical and electronic properties of anisotropic parabolic quantum disks in the presence of tilted magnetic fields
Pages 533-538
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Mechanism of quantum dot luminescence excitation within implanted SiO2:Si:C films
A. F. Zatsepin, E. A. Buntov, V. S. Kortov, D. I. Tetelbaum, A. N. Mikhaylov,  A.I. Belov
J. Phys.: Condens. Matter. , Vol: 24, No: 4 , published: 01 February 2012
Experimental and theoretical investigation of the pyroelectric effect of the p–n junction in a paraelectric non-polar semiconductor
Pages 439-450
Physica B, Vol: 407, No: 3 , published: 01 February 2012
Electronic structure of epitaxial anatase TiO2 films: Angle-resolved photoelectron spectroscopy study
Masato Emori, Mari Sugita, Kenichi Ozawa, and Hiroshi Sakama
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 31 January 2012
High-frequency electrical charge and spin control in a single InGaAs quantum dot
J. Nannen, W. Quitsch, S. Eliasson, T. Kümmell, and G. Bacher
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 31 January 2012
Quantitative modeling of spin relaxation in quantum dots
J. P. Hansen, S. A. Sørngård, M. Førre, and E. Räsänen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 31 January 2012
Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO
S. Brochen, C. Granier, G. Feuillet, J. Pernot
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
Z. Zhang, C. A. Hurni, A. R. Arehart, J. Yang, R. C. Myers, J. S. Speck, S. A. Ringel
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces
F. Gunkel, P. Brinks, S. Hoffmann-Eifert, R. Dittmann, M. Huijben, J. E. Kleibeuker, G. Koster, G. Rijnders, R. Waser
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN
N. Ma, B. Shen, L. W. Lu, F. J. Xu, L. Guo, X. Q. Wang, F. Lin, Z. H. Feng, S. B. Dun, B. Liu
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Anisotropic magnetoresistance and weak spin-orbital coupling in doped ZnO thin films
Yufeng Tian, Weinan Lin, Tom Wu
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry
S. R. Sarath Kumar, Anas I. Abutaha, M. N. Hedhili, H. N. Alshareef
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates
Saeed Esmaili-Sardari, Andrew Berkovich, Agis A. Iliadis
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Temperature dependent dynamics of ZnO nanoparticles probed by Raman scattering: A big divergence in the functional areas of nanoparticles and bulk materials
Harish Kumar Yadav, R. S. Katiyar, Vinay Gupta
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Temperature dependence of the intraexcitonic AC Stark effect in semiconductor quantum wells
M. Wagner, M. Teich, M. Helm, D. Stehr
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
N. Hossain, I. P. Marko, S. R. Jin, K. Hild, S. J. Sweeney, R. B. Lewis, D. A. Beaton, T. Tiedje
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Understanding metal doping for organic electron transport layers
Alexander Mityashin, David Cheyns, Barry P. Rand, Paul Heremans
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
J. C. H. Chen, D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, D. Reuter, A. D. Wieck, A. R. Hamilton
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems
Walter R. Buchwald, Justin W. Cleary, Joshua Hendrickson
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Surface optical phonon modes in GaN nanowire arrays: Dependence on nanowire density and diameter
R. Mata, A. Cros, K. Hestroffer, and B. Daudin
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 30 January 2012
The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
T. Wang, A. Lee, F. Tutu, A. Seeds, H. Liu, Q. Jiang, K. Groom, R. Hogg
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Position-controlled [100] InP nanowire arrays
Jia Wang, Sébastien Plissard, Moïra Hocevar, Thuy T. T. Vu, Tilman Zehender, George G. W. Immink, Marcel A. Verheijen, Jos Haverkort, Erik P. A. M. Bakkers
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots
A. I. Yakimov, A. A. Bloshkin, V. A. Timofeev, A. I. Nikiforov, A. V. Dvurechenskii
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U. Jahn, J. Lähnemann, C. Pfüller, O. Brandt, S. Breuer, B. Jenichen, M. Ramsteiner, L. Geelhaar, and H. Riechert
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 30 January 2012
Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
Y. J. Kuang, S. Sukrittanon, H. Li, C. W. Tu
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Picosecond transient photoluminescence in high-density Si-nanodisk arrays fabricated using bio-nano-templates
Takayuki Kiba, Yoshiya Mizushima, Makoto Igarashi, Chi-Hsien Huang, Seiji Samukawa, Akihiro Murayama
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Epitaxial Cr on n-SrTiO3(001)—An ideal Ohmic contact
C. Capan, G. Y. Sun, M. E. Bowden, S. A. Chambers
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Growth and valence band offset measurement of PbTe/InSb heterojunctions
Kyoung-Keun Lee, Weerasinghe Priyantha, Thomas H. Myers
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Polarity-dependent photoemission spectra of wurtzite-type zinc oxide
Jesse Williams, Hideki Yoshikawa, Shigenori Ueda, Yoshiyuki Yamashita, Keisuke Kobayashi, Yutaka Adachi, Hajime Haneda, Takeshi Ohgaki, Hiroki Miyazaki, Takamasa Ishigaki, Naoki Ohashi
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Chiral Orbital-Angular Momentum in the Surface States of Bi2Se3
Seung Ryong Park, Jinhee Han, Chul Kim, Yoon Young Koh, Changyoung Kim, Hyungjun Lee, Hyoung Joon Choi, Jung Hoon Han, Kyung Dong Lee, Nam Jung Hur, Masashi Arita, Kenya Shimada, Hirofumi Namatame, and Masaki Taniguchi
Phys. Rev. Lett., Vol: 108, No: 4 , published: 27 January 2012
Topological Hubbard Model and Its High-Temperature Quantum Hall Effect
Titus Neupert, Luiz Santos, Shinsei Ryu, Claudio Chamon, and Christopher Mudry
Phys. Rev. Lett., Vol: 108, No: 4 , published: 27 January 2012
Dipole Coupling of a Double Quantum Dot to a Microwave Resonator
T. Frey, P. J. Leek, M. Beck, A. Blais, T. Ihn, K. Ensslin, and A. Wallraff
Phys. Rev. Lett., Vol: 108, No: 4 , published: 27 January 2012
Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot
J. R. Prance, Zhan Shi, C. B. Simmons, D. E. Savage, M. G. Lagally, L. R. Schreiber, L. M. K. Vandersypen, Mark Friesen, Robert Joynt, S. N. Coppersmith, and M. A. Eriksson
Phys. Rev. Lett., Vol: 108, No: 4 , published: 27 January 2012
Shot noise induced by electron-nuclear spin-flip scattering in a nonequilibrium quantum wire
Kensaku Chida, Masayuki Hashisaka, Yoshiaki Yamauchi, Shuji Nakamura, Tomonori Arakawa, Tomoki Machida, Kensuke Kobayashi, and Teruo Ono
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 26 January 2012
Nano-hole array structure with improved surface plasmon energy matching characteristics
Mohamadreza Najiminaini,Fartash Vasefi,Bozena Kaminska,Jeffrey J. L. Carson
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 25 January 2012
Chromium as resonant donor impurity in PbTe
M. D. Nielsen, E. M. Levin, C. M. Jaworski, K. Schmidt-Rohr, and J. P. Heremans
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 25 January 2012
Lattice locations and properties of Fe in Co/Fe co-implanted ZnO
H. P. Gunnlaugsson,K. Johnston,T. E. Mølholt,G. Weyer,R. Mantovan,H. Masenda,D. Naidoo,S. Ólafsson,K. Bharuth-Ram,H. P. Gíslason,G. Langouche,M. B. Madsen,the ISOLDE Collaboration
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 25 January 2012
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
M. Forster,E. Fourmond,F. E. Rougieux,A. Cuevas,R. Gotoh,K. Fujiwara,S. Uda,M. Lemitiv
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 25 January 2012
Surface structure of GaP(110): Ion scattering and density functional theory study
L. Fishwick, M. Walker, M. K. Bradley, D. P. Woodruff, and C. F. McConville
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 25 January 2012
High pressure transport properties of the topological insulator Bi2Se3
J. J. Hamlin, J. R. Jeffries, N. P. Butch, P. Syers, D. A. Zocco, S. T. Weir, Y. K. Vohra, J. Paglione, M. B. Maple
J. Phys.: Condens. Matter. , Vol: 24, No: 3 , published: 25 January 2012
Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer
Zhaokui Wang,Mir Waqas Alam,Yanhui Lou,Shigeki Naka,Hiroyuki Okada
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 25 January 2012
Configuration interaction calculations of the controlled phase gate in double quantum dot qubits
Erik Nielsen, Richard P. Muller, and Malcolm S. Carroll
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 25 January 2012
Hydrodynamic rectified drag current in a quantum wire induced by Wigner crystallization
M. Yamamoto, H. Takagi, M. Stopa, and S. Tarucha
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 25 January 2012
Phosphorus and boron codoping of silicon nanocrystals by ion implantation: Photoluminescence properties
Toshihiro Nakamura, Sadao Adachi, Minoru Fujii, Kenta Miura, and Shunya Yamamoto
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 25 January 2012
Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires
S. Wirths,M. Mikulics,P. Heintzmann,A. Winden,K. Weis,Ch. Volk,K. Sladek,N. Demarina,H. Hardtdegen,D. Grützmacher,Th. Schäpers
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 25 January 2012
The influence of Al composition on point defect incorporation in AlGaN
T. A. Henry,A. Armstrong,A. A. Allerman,M. H. Crawford
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 24 January 2012
High-temperature thermoelectric properties of Cu1-xInTe2with a chalcopyrite structure
Atsuko Kosuga,Theerayuth Plirdpring,Ryosuke Higashine,Mie Matsuzawa,Ken Kurosaki,Shinsuke Yamanaka
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 24 January 2012
Plasmonic light trapping leads to responsivity increase in colloidal quantum dot photodetectors
F. Pelayo García de Arquer,Fiona J. Beck,María Bernechea,Gerasimos Konstantatos
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 24 January 2012
Time-resolved photocurrents in quantum well/dot infrared photodetectors with different optical coupling structures
Zhi-Hui Chen,S. Hellström,Zhong-Yuan Yu,Min Qiu,Y. Fu
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 24 January 2012
Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1-xSbstrain reducing layer
Chia-Tze Huang,Yu-Cheng Chen,Si-Chen Lee
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 24 January 2012
Pressure-dependent reordering of valence band states in GaN/AlxGa1−xN quantum wells
W. Bardyszewski and S. P. Łepkowski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 24 January 2012
Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
C. Payette,K. Wang,P. J. Koppinen,Y. Dovzhenko,J. C. Sturm,J. R. Petta
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 24 January 2012
Surface plasmon resonance and surface-enhanced Raman scattering sensing enabled by digital versatile discs
Xuan Dou,Pei-Yu Chung,Peng Jiang,Jianli Dai
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
The bound states of Fe impurity in wurtzite GaN
M. Zhang,T. F. Zhou,Y. M. Zhang,B. Li,S. N. Zheng,J. Huang,Y. P. Sun,G. Q. Ren,J. F. Wang,K. Xu,H. Yang
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO
Z. Zhang,K. E. Knutsen,T. Merz,A. Yu. Kuznetsov,B. G. Svensson,L. J. Brillson
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Metallicity of InN and GaN surfaces exposed to NH3
Weronika Walkosz, Peter Zapol, and G. Brian Stephenson
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 23 January 2012
Thermoelectric transport properties of the n-type impurity Al in PbTe
Christopher M. Jaworski and Joseph P. Heremans
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 23 January 2012
Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
H. P. Hsu,P. H. Wu,Y. S. Huang,D. Chrastina,G. Isella,H. von Känel,K. K. Tiong
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Spectrally resolved size-dependent third-order nonlinear optical properties of colloidal CdSe quantum dots
M. Nyk,D. Wawrzynczyk,J.Szeremeta,M. Samoc
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
n-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition
Hyemin Kang,Jusang Park,Taejin Choi,Hanearl Jung,Kwang H. Lee,Seongil Im,Hyungjun Kim
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Effects of fermion flavor on exciton condensation in double-layer systems
J. Shumway and Matthew J. Gilbert
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 23 January 2012
Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure
S. M. Chen,K. J. Zhou,Z. Y. Zhang,D. T. D. Childs,M. Hugues,A. J. Ramsay,R. A. Hogg
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes
Dong-Yul Lee,Sang-Heon Han,Dong-Ju Lee,Dong-Joon Kim,Young Sun Kim,Sung-Tae Kim
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Equivalent transport models in atomistic quantum wires
Gennady Mil’nikov, Nobuya Mori, and Yoshinari Kamakura
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 23 January 2012
Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities
Kelley Rivoire, Sonia Buckley, Yuncheng Song, Minjoo Larry Lee, and Jelena Vučković
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 23 January 2012
Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
Rosa Ruggeri,Fortunato Neri,Antonella Sciuto,Vittorio Privitera,Corrado Spinella,Giovanni Mannino
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Концентрационная зависимость ширины запрещенной зоны твердых растворов MnxFe1-xIn2S4
Боднарь И.В.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Мессбауэровские исследования двухэлектронных центров с отрицательной корреляционной энергией в кристаллических и аморфных полупроводниках
Бордовский Г.А., Немов С.А., Марченко А.В., Серегин П.П.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Изменение электронных свойств поверхности InAs(111)A при адсорбции кислорода и фтора
Еремеев С.В., Валишева Н.А., Терещенко О.Е., Кулькова С.Е.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Нелинейная генерация разностной частоты среднего инфракрасного диапазона в волноводах с модулированным профилем диэлектрической проницаемости
Микитчук К.Б., Афоненко А.А.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Экспериментальное исследование умножителей частоты на полупроводниковых сверхрешетках в терагерцовом диапазоне частот
Павельев Д.Г., Кошуринов Ю.И., Иванов А.С., Панин А.Н., Вакс В.Л., Гавриленко В.И., Антонов А.В., Устинов В.М., Жуков А.Е.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Термо- и фотопроводимость кристаллов CuI p-типа проводимости
Грузинцев А.Н., Загороднев В.Н.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Излучательная рекомбинация горячих носителей в узкозонных полупроводниках
Павлов Н.В., Зегря Г.Г.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Вибронные состояния в органических полупроводниках на основе безметалльного нафталоцианина, обнаружение гетероцикличных соединений в гибкой диэлектрической матрице
Белогорохов И.А., Тихонов Е.В., Дронов М.А., Белогорохова Л.И., Рябчиков Ю.В., Томилова Л.Г., Хохлов Д.Р.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Транспорт и частичная локализация электронов в короткопериодических напряженных полупроводниковых сверхрешетках
Герчиков Л.Г., Ауленбахер К., Мамаев Ю.А., Рин Э., Яшин Ю.П.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Выпрямление поперечного тока в сверхрешетке на основе графена
Завьялов Д.В., Конченков В.И., Крючков С.В.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Поляризационные зависимости электролюминесценции и поглощения вертикально-коррелированных InAs/GaAs-квантовых точек
Соболев М.М., Гаджиев И.М., Бакшаев И.О., Неведомский В.Н., Буяло М.С., Задиранов Ю.М., Золотарева Р.В., Портной Е.Л.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Естественные неоднородности в распределении туннельного тока по площади обратносмещенного кремниевого p-n-перехода
Козлов В.А., Оболенский С.В., Шмагин В.Б., Красильник З.Ф.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Trions in ZnO quantum wells and verification of the valence band ordering
J. Puls, S. Sadofev, and F. Henneberger
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 20 January 2012
Анизотропия проводимости цепочечного монокристалла TlGaTe2 под гидростатическим давлением
Мустафаева С.Н., Гасымов Ш.Г., Керимова Э.М., Асадов М.М.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Изменение оптических свойств кристаллов CuI при отжиге в вакууме
Грузинцев А.Н., Загороднев В.Н.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Когерентная спиновая динамика электронов и экситонов в  наноструктурах
Глазов М.М.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Влияние наночастиц и тонких слоев Au, фталоцианина Eu и наночастиц Er на формирование спектров излучения структур с квантовыми ямами  InGaN/GaN
Мездрогина М.М., Еременко М.В., Голубенко С.М., Москаленко Е.С.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Ab initio calculations of absorption spectra of semiconducting nanowires within many-body perturbation theory
Yuan Ping, Dario Rocca, Deyu Lu, and Giulia Galli
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 20 January 2012
Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems
K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 20 January 2012
General method for calculating the universal conductance of strongly correlated junctions of multiple quantum wires
Armin Rahmani, Chang-Yu Hou, Adrian Feiguin, Masaki Oshikawa, Claudio Chamon, and Ian Affleck
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 20 January 2012
Measuring the Complex Admittance of a Carbon Nanotube Double Quantum Dot
S. J. Chorley, J. Wabnig, Z. V. Penfold-Fitch, K. D. Petersson, J. Frake, C. G. Smith, and M. R. Buitelaar
Phys. Rev. Lett., Vol: 108, No: 3 , published: 20 January 2012
Спектры ИК-пропускания и отражения структур с квантовыми проволоками ZnTe и ZnTe/ZnMgTe
Виноградов В.С., Кучеренко И.В., Новикова Н.Н., Яковлев В.А., Janik E., Wojtowicz T.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Температурная зависимость интенсивности фотолюминесценции самоорганизованных квантовых точек CdTe в матрице ZnTe при разных условиях возбуждения
Резницкий А.Н., Клочихин А.А., Пермогоров С.А.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Vibrational and thermal properties of ZnX (X=Se, Te): Density functional theory (LDA and GGA) versus experiment
R. K. Kremer, M. Cardona, R. Lauck, G. Siegle, and A. H. Romero
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 19 January 2012
Time-resolved cyclotron resonance in cuprous oxide
Nobuko Naka, Ikuko Akimoto, Masanobu Shirai, and Ken-ichi Kan'no
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 19 January 2012
Probing the spin states of three interacting electrons in quantum dots
A. Gamucci, V. Pellegrini, A. Singha, A. Pinczuk, L. N. Pfeiffer, K. W. West, and M. Rontani
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 19 January 2012
Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires
S. Bounouar, C. Morchutt, M. Elouneg-Jamroz, L. Besombes, R. André, E. Bellet-Amalric, C. Bougerol, M. Den Hertog, K. Kheng, S. Tatarenko, and J. Ph. Poizat
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 19 January 2012
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
Julien Vidal,Stephan Lany,Mayeul d′Avezac,Alex Zunger,Andriy Zakutayev,Jason Francis,Janet Tate
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer
Peter G. Muzykov,Ramesh M. Krishna,Krishna C. Mandal
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
Hongtao He,Baikui Li,Hongchao Liu,Xin Guo,Ziyan Wang,Maohai Xie,Jiannong Wang
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Electronic and thermoelectric properties of RuIn3−xAx (A=Sn, Zn)
Deepa Kasinathan, Maik Wagner, Klaus Koepernik, Raul Cardoso-Gil, Yu. Grin, and Helge Rosner
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 18 January 2012
Discretized disorder in planar semiconductor microcavities: Mosaicity effect on resonant Rayleigh scattering and optical parametric oscillation
Marco Abbarchi, Carole Diederichs, Ludovic Largeau, Vincenzo Ardizzone, Olivia Mauguin, Timothee Lecomte, Aristide Lemaitre, Jacqueline Bloch, Philippe Roussignol, and Jerome Tignon
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 18 January 2012
Ultrabroadband terahertz spectroscopy of chalcogenide glasses
Maksim Zalkovskij,Christer Zoffmann Bisgaard,Andrey Novitsky,Radu Malureanu,Dan Savastru,Aurelian Popescu,Peter Uhd Jepsen,Andrei V. Lavrinenko
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications
C. P. Dietrich,M. Lange,M. St&ouml,M. Grundmann
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Phonon-assisted relaxation between hole states in quantum dot molecules
Krzysztof Gawarecki and Paweł Machnikowski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 18 January 2012
Experimental evidence for Luttinger liquid behavior in sufficiently long GaAs V-groove quantum wires
E. Levy, I. Sternfeld, M. Eshkol, M. Karpovski, B. Dwir, A. Rudra, E. Kapon, Y. Oreg, and A. Palevski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 18 January 2012
Atomistic pseudopotential theory of spin relaxation in self-assembled In1−xGaxAs/GaAs quantum dots at zero magnetic field
Hai Wei, Ming Gong, Guang-Can Guo, and Lixin He
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 18 January 2012
Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes
M. Munsch,J. Claudon,N. S. Malik,K. Gilbert,P. Grosse,J.-M. Gérard,F. Albert,F. Langer,T. Schlereth,M. M. Pieczarka,S. Höfling,M. Kamp,A. Forchel,S. Reitzenstein
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Measurement of heavy-hole spin dephasing in (InGa)As quantum dots
R. Dahbashi,J.Hübner,F. Berski,J. Wiegand,X. Marie,K. Pierz,H. W. Schumacher,M. Oestreich
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures
Yu. I. Mazur,V. G. Dorogan,G. J. Salamo,G. G. Tarasov,B. L. Liang,C. J. Reyner,K. Nunna,D. L. Huffaker
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings
K. M. Gambaryan,V. M. Aroutiounian,V. G. Harutyunyan,O. Marquardt,P. G. Soukiassian
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Gallium-droplet behaviors of self-catalyzed GaAs nanowires: A transmission electron microscopy study
Young Heon Kim,Dong Woo Park,Sang Jun Lee
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
P. GladkovE. ,Hulicius,T. Paskova,E. Preble,K. R. Evans
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Growth orientation dependent photoluminescence of GaAsN alloys
Xiuxun Han,Tomohiro Tanaka,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi,Shinichiro Sato
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure  
Yang Yang,Lu Jin,Xiangyang Ma,Deren Yang
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
First-principles calculations of the phase diagrams and band gaps in CuInSe2-CuGaSe2 and CuInSe2-CuAlSe2 pseudobinary systems
Yu Kumagai, Yoshito Soda, Fumiyasu Oba, Atsuto Seko, and Isao Tanaka
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)
Won Seok Yun, S. W. Han, Soon Cheol Hong, In Gee Kim, and J. D. Lee
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Temperature dependence of the Hall effect in pentacene field-effect transistors: Possibility of charge decoherence induced by molecular fluctuations
T. Uemura, M. Yamagishi, J. Soeda, Y. Takatsuki, Y. Okada, Y. Nakazawa, and J. Takeya
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Optical third harmonic generation in the magnetic semiconductor EuSe
M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, R. V. Pisarev, A. B. Henriques, D. R. Yakovlev, G. Springholz, G. Bauer, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Nonactivated transport of ultradilute two-dimensional hole systems in GaAs field-effect transistors: Interaction versus disorder
Jian Huang, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 17 January 2012
Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field
K. Sivalertporn, L. Mouchliadis, A. L. Ivanov, R. Philp, and E. A. Muljarov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 17 January 2012
Mapping between quantum dot and quantum well lasers: From conventional to spin lasers
Jeongsu Lee, Rafał Oszwałdowski, Christian Gøthgen, and Igor Žutić
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 17 January 2012
Nonlinear photon transport in a semiconductor waveguide-cavity system containing a single quantum dot: Anharmonic cavity-QED regime
S. Hughes and C. Roy
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Carrier trapping and luminescence polarization in quantum dashes
A. Musiał, P. Kaczmarkiewicz, G. Sęk, P. Podemski, P. Machnikowski, J. Misiewicz, S. Hein, S. Höfling, and A. Forchel
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Atomic and electronic structure of Mn-delta doped GaN (1\bar 100) film from first-principles calculations
JiXia Wang and GuiQin Huang
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Effects of surface modification on the properties of topological surface states in Bi2Se3
Pages 768-772
Phys. Lett. A, Vol: 376, No: 5 , published: 16 January 2012
Optical and Electric Properties of Bi0.5Na0.5TiO3-Based Thin Films Grown on Indium–Tin-Oxide-Coated Glass Substrates
Shan-Tao Zhang, Y. B. Chen, and Zheng-Bin Gu
Jpn. J. Appl. Phys., Vol: 51, No: 1R , published: 16 January 2012
The growth process and field emission characteristics of spherical aggregates of polycrystalline diamond flakes
Zhanling Lu, Lan Zhang, Xiaotian Ma, Ning Yao and Binglin Zhang
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Effect of outgassing on the field emission property of tetrapod ZnO
Yunkang Cui, Xiaobing Zhang, Wei Lei, Jinchan Wang, Yunsong Di, Xiaxi Yang and Jing Chen
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Improvement of the performance of a field-emission device with a metal mask
Wei Lei, Baoping Wang, Xiaobing Zhang, Zhiwei Zhao and Yiping Cui
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Synthesis and field emission properties of SnO2 nanowires
Lingjie Wang, Jinyang Lin, Yun Ye and Tailiang Guo
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Surface-conducted field emission lamp with ZnO nanotetrapod and MgO composite emitter
Ke Qu, Xiaobo Zhu, Chi Li, Kai Hou, Xiaxi Yang, Wei Lei, Xiaobing Zhang, Yu Shen, Xu Li and Baoping Wang
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Scanning Tunneling Spectroscopy Observation of Electronic Resonances Originating from 1 × 1 Potential on the Dense Pb Overlayer on Si(111)
Shin-Ming Lu, Wen-Yuan Chan, Hsing-Yi Chou, Ya-Ping Chiu, Wei-Bin Su, Pei-Hong Chu, Chi-Lun Jiang, Chia-Seng Chang, Hsi-Lien Hsiao, and Tien Tzou Tsong
Jpn. J. Appl. Phys., Vol: 51, No: 1R , published: 16 January 2012
Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes
Ruihong Luo, Wentao Rao, Tufu Chen, Peng Xiang, Minggang Liu, Weimin Yang, Yunqian Wang, Yibin Yang, Zhisheng Wu, Yang Liu, Hao Jiang, and Baijun Zhang
Jpn. J. Appl. Phys., Vol: 51, No: 1R , published: 16 January 2012
Enhanced absorption of CdS quantum dots deposited onto ZnO nanorod by using bifunctional linker
Jing Chen, Xiaxi Yang, Jun Wu, Wei Lei and Xiaobing Zhang
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
Characterization of Hf1-xZrxO2 Gate Dielectrics with 0≤ x≤ 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
Chen-Kuo Chiang, Chien-Hung Wu, Chin-Chien Liu, Jin-Fu Lin, Chien-Lun Yang, Jiun-Yuan Wu, and Shui-Jinn Wang
Jpn. J. Appl. Phys., Vol: 51, No: 1R , published: 16 January 2012
Study on photoemission mechanism for negative electron affinity GaN vacuum electron source
Jianliang Qiao, Benkang Chang, Yunsheng Qian, Xiaohui Wang, Biao Li and Xiaoqian Fu
Phys. Status Solidi C, Vol: 9, No: 1 , published: 16 January 2012
X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source
Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Yohei Monno, and Takahiro Maruyama
Jpn. J. Appl. Phys., Vol: 51, No: 1R , published: 16 January 2012
Electronic structure and optical properties of Sn-doped ZnO
Pages 268-270
Physica B, Vol: 407, No: 2 , published: 15 January 2012
Observation of quantum beat oscillations and ultrafast relaxation of excitons confined in GaAs thin films by controlling probe laser pulses
Shohei Ohta, Osamu Kojima, Takashi Kita, Toshiro Isu
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Thermal conductivity of semiconductor nanowires from micro to nano length scales
Martin Maldovan
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Enhanced thermoelectric properties of Mg2Si by addition of TiO2 nanoparticles
D. Cederkrantz, N. Farahi, K. A. Borup, B. B. Iversen, M. Nygren, A. E. C. Palmqvist
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Thermoelectric properties of Cu doped ZnSb containing Zn3P2 particles
K. Valset, P. H. M. Böttger, J. Taftø, T. G. Finstad
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Electrical characteristics of cadmium doped InAs grown by metalorganic vapor phase epitaxy
V. Wagener, M. C. Wagener, J. R. Botha
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
High Transparency and Electrical Conductivity of SnO2:Nb Thin Films Formed through (001)-Oriented SnO:Nb on Glass Substrate
Ai Yoshie Suzuki, Kenji Nose, Ai Ueno, Masao Kamiko, and Yoshitaka Mitsuda
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
Cyclotron resonance and intersubband transitions in symmetric InSb/AlInSb quantum wells with a perpendicular magnetic field
X. G. Wu and X. H. Zhang
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Nonlinear optical properties in a quantum well with the hyperbolic confinement potential
Pages 263-267
Physica B, Vol: 407, No: 2 , published: 15 January 2012
Structure and Optical Properties of InGaAsBi with up to 7% Bismuth
Jan Devenson, Vaidas Pačebutas, Renata Butkut\.e, Alexei Baranov, and Arūnas Krotkus
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
Kai Cheng, Hu Liang, Marleen Van Hove, Karen Geens, Brice De Jaeger, Puneet Srivastava, Xuanwu Kang, Paola Favia, Hugo Bender, Stefaan Decoutere, Johan Dekoster, Jose Ignacio del Agua Borniquel, Sung Won Jun, and Hua Chung
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
Kazuaki Ebata, Shigekazu Tomai, Yuki Tsuruma, Takashi Iitsuka, Shigeo Matsuzaki, and Koki Yano
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
Transient electron transport properties of multiple quantum dots systems
E. Taranko, M. Wiertel, R. Taranko
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Reordering orbitals of semiconductor multi-shell quantum dot-quantum well heteronanocrystals
Mehmet Şahin, Sedat Nizamoglu, Ozan Yerli, Hilmi Volkan Demir
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Abstraction of Blue Photoluminescence in Al-Doped ZnO Nanoparticles Prepared by Electron Beam Deposition
Jung-Hye Kim, Tae-Ho Shin, Kee-Jeong Yang, Jaewook Jeong, and Byeongdae Choi
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
D. Dagnelund, I. P. Vorona, G. Nosenko, X. J. Wang, C. W. Tu, H. Yonezu, A. Polimeni, M. Capizzi, W. M. Chen, I. A Buyanova
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Carrier dynamics in bulk GaN
Patrik Šcajev, Kęstutis Jarašiūnas, Serdal Okur, Ümit Özgür, Hadis Morkoç
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers
SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryo Iida, Sunghoon Lee, Ryosho Nakane, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, and Shinichi Takagi
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
Relaxation Dynamics of Photocarriers in One-Dimensional Mott Insulators Coupled to Phonons
Hiroaki Matsueda, Shigetoshi Sota, Takami Tohyama, and Sadamichi Maekawa
J. Phys. Soc. Jpn., Vol: 81, No: 1 , published: 14 January 2012
Nuclear Spins of Ionized Phosphorus Donors in Silicon
Lukas Dreher, Felix Hoehne, Martin Stutzmann, and Martin S. Brandt
Phys. Rev. Lett., Vol: 108, No: 2 , published: 13 January 2012
Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin
Elif Ertekin, Mark T. Winkler, Daniel Recht, Aurore J. Said, Michael J. Aziz, Tonio Buonassisi, and Jeffrey C. Grossman
Phys. Rev. Lett., Vol: 108, No: 2 , published: 13 January 2012
Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts
Sonja Koller, Milena Grifoni, and Jens Paaske
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 13 January 2012
Exciton states and excitonic absorption spectra in a cylindrical quantum wire under transverse electric field
S.D. Wu,  L. Wan
Eur. Phys. J. B , Vol: 85, No: 1 , published: 12 January 2012
Charge injection and transport in low-mobility mixed ionic/electronic conducting systems: Regimes of behavior and limiting cases
Thomas J. Mills and Mark C. Lonergan
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 12 January 2012
Multifractal analysis of the electronic states in the Fibonacci superlattice under weak electric fields
M. Wołoszyn,  B.J. Spisak
Eur. Phys. J. B , Vol: 85, No: 1 , published: 12 January 2012
Persistent spin splitting of a two-dimensional electron gas in tilted magnetic fields
R. Gammag,  C. Villagonzalo
Eur. Phys. J. B , Vol: 85, No: 1 , published: 12 January 2012
Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers
S. Ridene, M. Debbichi, M. Saïd, H. Bouchriha
Eur. Phys. J. B , Vol: 85, No: 1 , published: 12 January 2012
Theoretical studies on intervalley splittings in Si/SiO2 quantum dot structures
S.H. Park, D. Ahn
Eur. Phys. J. B , Vol: 85, No: 1 , published: 12 January 2012
Influences of lattice mismatches on equilibrium morphologies and strain distributions of quantum dots
W.M. Zhou, H. Wang, Y. Jiang
Eur. Phys. J. B , Vol: 85, No: 1 , published: 12 January 2012
Measurement of interchain and intrachain exciton hopping barriers in luminescent polymer
P. L. Santos, B. B. A. Costa, K. S. Araujo, L. A. Cury, E. W. Snedden, K. N. Bourdakos, F. B. Diasand, A. P. Monkman
J. Phys.: Condens. Matter. , Vol: 24, No: 1 , published: 11 January 2012
Dispersion and damping of multiple quantum-well polaritons from resonant Brillouin scattering by folded acoustic modes
B. Jusserand, A. Fainstein, R. Ferreira, S. Majrab, and A. Lemaitre
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 11 January 2012
Amorphous Ge15Te85: density functional, high-energy x-ray and neutron diffraction study
J. Kalikka, J. Akola, R. O. Jones, S. Koharaand, T. Usuki
J. Phys.: Condens. Matter. , Vol: 24, No: 1 , published: 11 January 2012
Effective Hamiltonian, energy spectrum, and phase transition induced by in-plane magnetic field in symmetric HgTe quantum wells
O. E. Raichev
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 11 January 2012
Nonadiabatic electron pumping through interacting quantum dots
Alexander Croy, Ulf Saalmann, Alexis R. Hernández, and Caio H. Lewenkopf
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 11 January 2012
Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots
Z. Liu, L. Wang, and K. Shen
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 11 January 2012
Inducing novel electronic properties in ⟨112⟩ Ge nanowires by means of variations in their size, shape and strain: a first-principles computational study
Chao Zhang, Abir De Sarkar and Rui-Qin Zhang
J. Phys.: Condens. Matter. , Vol: 24, No: 1 , published: 11 January 2012
Band gap reduction and dielectric function of Ga1−xZnxN1−xOx and In1−xZnxN1−xOx alloys
Maofeng Dou and Clas Persson
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Hybrid functional calculations of native point defects in InN
A. Janotti, J. L. Lyons and C. G. Van de Walle
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Ar plasma induced deep levels in epitaxial n-GaAs
A. Venter, C. Nyamhere, J. R. Botha, F. D. Auret, P. J. Janse van Rensburg, W. E. Meyer, S. M. M. Coelho, V. l. Kolkovsky
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN
S. L. Wang, H. X. Liu, B. Gao, J. B. Fan, F. Ma, Q. W. Kuang
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Electron and hole scattering dynamics in InN films investigated by infrared measurements
Yoshihiro Ishitani, Masayuki Fujiwara, Daichi Imai, Kazuhide Kusakabe and Akihiko Yoshikawa
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
On the effective thermoelectric properties of layered heterogeneous medium
Y. Yang, S. H. Xie, F. Y. Ma, J. Y. Li
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Thermoelectric performance of Zn-substituted type-VIII clathrate Ba8Ga16Sn30 single crystals
Baoli Du, Yuta Saiga, Kousuke Kajisa, Toshiro Takabatake
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Thermoelectric properties and microstructures of AgSbTe2-added p-type Pb0.16Ge0.84Te
Aikebaier Yusufu, Ken Kurosaki, Tohru Sugahara, Yuji Ohishi, Hiroaki Muta and Shinsuke Yamanaka
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Assessment on thermoelectric power factor in silicon nanowire networks
Andrew J. Lohn, Elane Coleman, Gary S. Tompa and Nobuhiko P. Kobayashi
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy
Jessica H. Chai, Young-Wook Song, Roger J. Reeves and Steven M. Durbin
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Urbach tail and bandgap analysis in near stoichiometric LiNbO3 crystals
R. Bhatt, I. Bhaumik, S. Ganesamoorthy, A. K. Karnal, M. K. Swami, H. S. Patel and P. K. Gupta
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds
O. Gomis, R. Vilaplana, F. J. Manjón, E. Pérez-González, J. López-Solano, P. Rodríguez-Hernández, A. Muñoz, D. Errandonea, J. Ruiz-Fuertes, A. Segura, D. Santamaría-Pérez, I. M. Tiginyanu, V. V. Ursaki
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Morphological, optical, and Raman characteristics of ZnO nanoflakes prepared via a sol–gel method
M. Kashif, Syed M. Usman Ali, M. E. Ali, H. I. Abdulgafour, U. Hashim, M. Willander and Z. Hassan
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Experimental realization of the porous silicon optical multilayers based on the 1-s sequence
J. O. Estevez, J. Arriaga, A. Méndez-Blas, M. G. Robles-Cháirez, D. A. Contreras-Solorio
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost and R. Goldhahn
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis
F. Komarov, L. Vlasukova, O. Milchanin, A. Mudryi, B. Dunets, W. Wesch and E. Wendler
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Elastic, anelastic, and piezoelectric coefficients of GaN
N. Nakamura, H. Ogi, M. Hirao
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Spin-dependent recombination in Czochralski silicon containing oxide precipitates
V. Lang, J. D. Murphy, R. J. Falster, J. J. L. Morton
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope
Iñaki López, Emilio Nogales, Pedro Hidalgo, Bianchi Méndez and Javier Piqueras
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures
Piero Gamarra, Cedric Lacam, Michelle Magis, Maurice Tordjman and Marie-Antoinette di Forte Poisson
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy
Ajay Raman, Christophe A. Hurni, James S. Speck and Umesh K. Mishra
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
High-quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions
C. Bayram
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
High-efficiency InGaN/GaN quantum well structures on large area silicon substrates
D. Zhu, C. McAleese, M. Häberlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke, M. Couillard, G. A. Botton, S.-L. Sahonta and C. J. Humphreys
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Spin separation in a quantum dot ring driven by a temperature bias
Wei-Jiang Gong, Shuang Fan, Francis N. Kariuki, Guo-Zhu Wei, An Du
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
J. F. Chen, Y. C. Lin, C. H. Chiang, Ross C. C. Chen, Y. F. Chen, Y. H. Wu, L. Chang
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)
T. V. Hakkarainen, A. Schramm, J. Tommila, M. Guina
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells
S. Turcotte, J.-N. Beaudry, R. A. Masut, P. Desjardins, G. Bentoumi, and R. Leonelli
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 10 January 2012
Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence
D. Spirkoska, Al. L. Efros, W. R. L. Lambrecht, T. Cheiwchanchamnangij, A. Fontcuberta i Morral, and G. Abstreiter
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 10 January 2012
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells
A. Giorgioni, E. Gatti, E. Grilli, A. Chernikov, S. Chatterjee, D. Chrastina, G. Isella, M. Guzzi
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition
Yu Bai, Mayank T. Bulsara, Eugene A. Fitzgerald
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Sirona Valdueza-Felip, Lorenzo Rigutti, Fernando B. Naranjo, Bertrand Lacroix, Susana Fernández, Pierre Ruterana, François H. Julien, Miguel González-Herráez and Eva Monroy
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InP
V. Lakshmi Devi, I. Jyothi, V. Rajagopal Reddy and Chel-Jong Choi
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy
Anja Eisenhardt, Marcel Himmerlich and Stefan Krischok
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Band gap engineering by functionalization of BN sheet
A. Bhattacharya, S. Bhattacharya, and G. P. Das
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 09 January 2012
Energetics and electronic structure of GaN codoped with Eu and Si
A. Vallan Bruno Cruz, Prashant P. Shinde, Vijay Kumar, and John M. Zavada
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 09 January 2012
Hybrid density functional theory study of band gap tuning in AlN and GaN through equibiaxial strains
Yifeng Duan, Lixia Qin, Liwei Shi, Gang Tang, Hongliang Shi
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Optical properties of Mn-doped GaN
A. Boukortt, R. Hayn, and F. Virot
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 09 January 2012
Anisotropy of free-carrier absorption and diffusivity in m-plane GaN
P. Ščajev, K. Jarašiūnas, Ü. Özgür, H. Morkoç, J. Leach, T. Paskova
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Phase-matched second-harmonic generation due to thermal expansion of TlGaSe2 layered crystal
Pages 643-645
Phys. Lett. A, Vol: 376, No: 4 , published: 09 January 2012
Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures
S. Stachel, P. Olbrich, C. Zoth, U. Hagner, T. Stangl, C. Karl, P. Lutz, V. V. Bel'kov, S. K. Clowes, T. Ashley, A. M. Gilbertson, and S. D. Ganichev
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 09 January 2012
Photovoltaic quantum dot quantum cascade infrared photodetector
A. V. Barve, S. Krishna
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
On the polarized emission from exciton complexes in GaN quantum dots
S. Amloy, K. F. Karlsson, T. G. Andersson, P. O. Holtz
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Rashba spin orbit interaction in a quantum wire superlattice
Gunnar Thorgilsson, J. Carlos Egues, Daniel Loss, and Sigurdur I. Erlingsson
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 09 January 2012
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, T. Kolbe
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells
Hari P. Nair, Adam M. Crook, Kin M. Yu, Seth R. Bank
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Laser field-driven potential profiles of double quantum wells
Pages 590-594
Phys. Lett. A, Vol: 376, No: 4 , published: 09 January 2012
Spin switching in a Mn-doped quantum dot using the optical Stark effect
D. E. Reiter, T. Kuhn, and V. M. Axt
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 09 January 2012
Charge separation in CdSe/CdTe hetero-nanowires measured by electrostatic force microscopy
Sebastian Schäfer, Aina Reich, Zhe Wang, Tobias Kipp, Alf Mews
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Tuning the Schottky barrier height at MgO/metal interface
T. Jaouen, G. Jézéquel, G. Delhaye, B. Lépine, P. Turban, P. Schieffer
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Ohmic contacts to n-type germanium with low specific contact resistivity
K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov, D. R. Leadley
Appl. Phys. Lett. , Vol: 100, No: 2 , published: 09 January 2012
Biexciton binding energy in fractional dimensional semiconductors
Troels F. Rønnow, Thomas G. Pedersen, and Bart Partoens
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 06 January 2012
Surface Origin of High Conductivities in Undoped In2O3 Thin Films
S. Lany, A. Zakutayev, T. O. Mason, J. F. Wager, K. R. Poeppelmeier, J. D. Perkins, J. J. Berry, D. S. Ginley, and A. Zunger
Phys. Rev. Lett., Vol: 108, No: 1 , published: 06 January 2012
Magnetic-field-induced spin texture in a quantum wire with linear Dresselhaus spin-orbit coupling
S. Gujarathi, K. M. Alam, and S. Pramanik
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 06 January 2012
Coherent Optical Control of the Spin of a Single Hole in an InAs/GaAs Quantum Dot
T. M. Godden, J. H. Quilter, A. J. Ramsay, Yanwen Wu, P. Brereton, S. J. Boyle, I. J. Luxmoore, J. Puebla-Nunez, A. M. Fox, and M. S. Skolnick
Phys. Rev. Lett., Vol: 108, No: 1 , published: 06 January 2012
Observation of a blue shift in the optical response at the fundamental band gap in Ga1-xMnxAs
T. de Boer, A. Gamouras, S. March, V. Novák, and K. C. Hall
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 06 January 2012
Resonance Fluorescence from Semiconductor Quantum Dots: Beyond the Mollow Triplet
Anders Moelbjerg, Per Kaer, Michael Lorke, and Jesper Mørk
Phys. Rev. Lett., Vol: 108, No: 1 , published: 06 January 2012
Magneto-optical probe of quantum Hall states in a wide parabolic well modulated by random potential
Yu. A. Pusep, L. Fernandes dos Santos, D. Smirnov, A. K. Bakarov, and A. I. Toropov
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 05 January 2012
Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers
P. H. Wu, Y. S. Huang, H. P. Hsu, D. Chrastina, G. Isella, H. von Känel, and K. K. Tiong
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 05 January 2012
Phonon-assisted luminescence of polar semiconductors: Fröhlich coupling versus deformation-potential scattering
A. Chernikov, V. Bornwasser, M. Koch, S. Chatterjee, C. N. Böttge, T. Feldtmann, M. Kira, S. W. Koch, T. Wassner, S. Lautenschläger, B. K. Meyer, and M. Eickhoff
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 04 January 2012
Limit cycles and chaos in the current through a quantum dot
Carlos López-Monís, Clive Emary, Gerold Kiesslich, Gloria Platero, and Tobias Brandes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 03 January 2012
Anomalous photoluminescence Stokes shift in CdSe nanoparticle and carbon nanotube hybrids
Austin J. Akey, Chenguang Lu, Lijun Wu, Yimei Zhu, and Irving P. Herman
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 03 January 2012
Modulation of surface plasmon wave by photo-induced refractive index changes of CdSe quantum dots
Horng-Shyang Chen,Jyh-Yang Wang,Sheng-Shiuan ,Chii-Dong Chen,Hung-Yi Lin
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
N. Chauvin,M. H. Hadj Alouane,R. Anufriev,H. Khmissi,K. Naji,G. Patriarche,C. Bru-Chevallier,M. Gendry
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Resonant carrier scattering by core-shell nanoparticles for thermoelectric power factor enhancement
Je-Hyeong Bahk, Parthiban Santhanam, Zhixi Bian, Rajeev Ram, Ali Shakouri
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Growth, optical, and electrical properties of nonpolarm-plane ZnO on p-Si substrates with Al2O3 buffer layers
T. Wang,H. Wu,C. Chen,C. Liu
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Electric-field-induced current-voltage characteristics in electronic conducting perovskite thin films
Jennifer L. M. Rupp,Patrick Reinhard,Daniele Pergolesi,Thomas Ryll,Rene T&ouml,Enrico Traversa
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2
H. Peelaers,E. Kioupakis,C. G. Van de Walle
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates
Bei Ma,Daiki Jinno,Hideto Miyake,Kazumasa Hiramatsu,Hiroshi Harima
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Observation of nonlinear absorption and visible photoluminescence emission in chemically synthesized Cu2+ doped ZnS nanoparticles
A. K. Kole, P. Kumbhakar, U. Chatterjee
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Implementation of a semi-transparent mid-infrared quantum well infrared photodetector simultaneously as a beamsplitter and a reference detector
Ekua N. Bentil,Germano M. Penello,William O. Charles,Peter Q. Liu,Claire F.
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Leaky-mode effects in plasmonic-coupled quantum dot infrared photodetectors
S. C. Lee,Y. D. Sharma,S. Krishna,S. R. J. Brueck
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies
H.-Y. Kim, C. F. Lo, L. Liu, F. Ren, J. Kim, S. J. Pearton
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
JunShuai Xue, JinCheng Zhang, YaoWei Hou, Hao Zhou, JinFeng Zhang, Yue Hao
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Optical pumping and reversal of hole spin in InAs/GaAs quantum dots
F. Fras, B. Eble, F. Bernardot, C. Testelin, M. Chamarro, A. Miard, A. Lemaître
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
J. M. Ulloa, D. F. Reyes, M. Montes, K. Yamamoto, D. L. Sales, D. González, A. Guzman, A. Hierro
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
X-ray luminescence of CdTe quantum dots in LaF3:Ce/CdTe nanocomposites
Marius Hossu, Zhongxin Liu, Mingzhen Yao, Lun Ma, Wei Chen
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Band offsets in HfO2/InGaZnO4 heterojunctions
Hyun Cho, E. A. Douglas, B. P. Gila, V. Craciun, E. S. Lambers, Fan Ren, S. J. Pearton
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
A study of energy band gap versus temperature for Cu2ZnSnS4 thin films
Pages 108-111
Physica B, Vol: 407, No: 1 , published: 01 January 2012
First-principle calculations of dilute nitride GaP1−xNx alloy in zinc-blende structures
Pages 112-115
Physica B, Vol: 407, No: 1 , published: 01 January 2012
Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure
Pages 116-119
Physica B, Vol: 407, No: 1 , published: 01 January 2012
One phonon-assisted electron Raman scattering in a wurtzite cylindrical quantum well wire
Pages 165-170
Physica B, Vol: 407, No: 1 , published: 01 January 2012
Quadratic electro-optic effect and electro-absorption process in CdSe–ZnS–CdSe structure
Pages 782-785
Physica E, Vol: 44, No: 4 , published: 01 January 2012
Optical properties of As34Te44Ge10Si12 amorphous films
Pages 33-37
Physica B, Vol: 407, No: 1 , published: 01 January 2012
The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering
Pages 64-67
Physica B, Vol: 407, No: 1 , published: 01 January 2012
Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells
Pages 797-802
Physica E, Vol: 44, No: 4 , published: 01 January 2012
Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime
Pages 821-825
Physica E, Vol: 44, No: 4 , published: 01 January 2012
The nonlinear optical rectification of an ellipsoidal quantum dot with impurity in the presence of an electric field
Pages 786-790
Physica E, Vol: 44, No: 4 , published: 01 January 2012
External electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energy and the diamagnetic susceptibility of a hydrogenic impurity quantum dot
Pages 833-838
Physica E, Vol: 44, No: 4 , published: 01 January 2012
Confined states of a positronium in a spherical quantum dot
Pages 131-135
Physica B, Vol: 407, No: 1 , published: 01 January 2012
Synthesis and photoluminescence properties of SnO2/ZnO hierarchical nanostructures
Pages 791-796
Physica E, Vol: 44, No: 4 , published: 01 January 2012
Quantum confinement and spin-orbit interactions in PbSe and PbTe nanowires: First-principles calculation
E. O. Wrasse, R. J. Baierle, T. M. Schmidt, and A. Fazzio
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 30 December 2011
Direct observation of metastable hot trions in an individual quantum dot
V. Jovanov, S. Kapfinger, M. Bichler, G. Abstreiter, and J. J. Finley
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 30 December 2011
Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies
Zhuo Xu, Qing-Rong Zheng, and Gang Su
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 30 December 2011
Interacting topological phases in multiband nanowires
Roman M. Lutchyn and Matthew P. A. Fisher
Phys. Rev. B: Condens. Matter, Vol: 84, No: 21 , published: 29 December 2011
Fano resonances and electron spin transport through a two-dimensional spin-orbit-coupled quantum ring
M. P. Nowak, B. Szafran, and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 29 December 2011
Dynamical fluctuations in In nanowires on Si(111)
Shinichiro Hatta, Yoshiyuki Ohtsubo, Tetsuya Aruga, Sanae Miyamoto, Hiroshi Okuyama, Hiroo Tajiri, and Osami Sakata
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 28 December 2011
Spatial variation of the two-dimensional electron gas density induced by an increasing Hall electric field
I. Baskin, B. M. Ashkinadze, E. Cohen, V. V. Belkov, L. N. Pfeiffer, and V. Umansky
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 28 December 2011
Geometry of epitaxial GaAs/(Al,Ga)As quantum dots as seen by excitonic spectroscopy
Jun-Wei Luo and Alex Zunger
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 28 December 2011
Photoluminescence and ultrafast intersubband relaxation in Ge/SiGe multiple quantum wells
E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, A. Chernikov, V. Bornwasser, N. Köster, R. Woscholski, and S. Chatterjee
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 28 December 2011
Ternary silicon germanium nitrides: A class of tunable band gap materials
Judy N. Hart, Neil L. Allan, and Frederik Claeyssens
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 27 December 2011
Unoccupied dimer-bond state at Si(001) surfaces
Thomas Fauster, Shin'ichiro Tanaka, and Katsumi Tanimura
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 27 December 2011
Ultrafast relaxation of highly excited hot electrons in Si: Roles of the L−X intervalley scattering
T. Ichibayashi, S. Tanaka, J. Kanasaki, K. Tanimura, and Thomas Fauster
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 27 December 2011
Semiclassical interpretation of the spin interference effect observed in square loop arrays of In0.53Ga0.47As/In0.52Al0.48As quantum wells
S. Mineshige, S. Kawabata, S. Faniel, J. Waugh, Y. Sekine, and T. Koga
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 27 December 2011
Theory of ac spin current noise and spin conductance through a quantum dot in the Kondo regime: Equilibrium case
C. P. Moca, I. Weymann, and G. Zarand
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 27 December 2011
Auger release of a deeply trapped carrier in a quantum dot
T. Hartmann, P. Reineker, and V. I. Yudson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 27 December 2011
First-principles simulations of exciton diffusion in organic semiconductors
Xu Zhang, Zi Li, and Gang Lu
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 22 December 2011
Temperature dependence of exciton and charge carrier dynamics in organic thin films
A. D. Platt, M. J. Kendrick, M. Loth, J. E. Anthony, and O. Ostroverkhova
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 22 December 2011
Photon cutting for excitation of Er3+ ions in SiO2 sensitized by Si quantum dots
N. N. Ha, S. Cueff, K. Dohnalová, M. T. Trinh, C. Labbé, R. Rizk, I. N. Yassievich, and T. Gregorkiewicz
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 22 December 2011
Emission spectrum of quasiresonant laterally coupled quantum dots
Miquel Royo, Juan I. Climente, and Josep Planelles
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 21 December 2011
Noise spectra of an interacting quantum dot
N. Gabdank, E. A. Rothstein, O. Entin-Wohlman, and A. Aharony
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 21 December 2011
Quantum control of a Landau-quantized two-dimensional electron gas in a GaAs quantum well using coherent terahertz pulses
T. Arikawa, X. Wang, D. J. Hilton, J. L. Reno, W. Pan, and J. Kono
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 20 December 2011
Modification to the central-cell correction of germanium acceptors
O. Drachenko, H. Schneider, M. Helm, D. Kozlov, V. Gavrilenko, J. Wosnitza, and J. Leotin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 19 December 2011
Effect of temperature on resonant electron transport through stochastic conduction channels in superlattices
A. O. Selskii, A. A. Koronovskii, A. E. Hramov, O. I. Moskalenko, K. N. Alekseev, M. T. Greenaway, F. Wang, T. M. Fromhold, A. V. Shorokhov, N. N. Khvastunov, and A. G. Balanov
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 19 December 2011
Mechanism of half-frequency electric dipole spin resonance in double quantum dots: Effect of nonlinear charge dynamics inside the singlet manifold
Emmanuel I. Rashba
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 19 December 2011
Theory of fine structure of correlated exciton states in self-assembled semiconductor quantum dots in a magnetic field
Anna H. Trojnar, Eugene S. Kadantsev, Marek Korkusiński, and Pawel Hawrylak
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 19 December 2011
Spin-1/2 Kondo effect in an InAs nanowire quantum dot: Unitary limit, conductance scaling, and Zeeman splitting
Andrey V. Kretinin, Hadas Shtrikman, David Goldhaber-Gordon, Markus Hanl, Andreas Weichselbaum, Jan von Delft, Theo Costi, and Diana Mahalu
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 19 December 2011
Direct observation of two-phonon bound states in ZnTe
Jianbo Hu, Oleg V. Misochko, and Kazutaka G. Nakamura
Phys. Rev. B: Condens. Matter, Vol: 84, No: 22 , published: 15 December 2011
Microwave photoresistance in a two-dimensional electron gas with separated Landau levels
A. T. Hatke, M. A. Zudov, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 15 December 2011
Screening of charged impurities with multielectron singlet-triplet spin qubits in quantum dots
Edwin Barnes, J. P. Kestner, N. T. T. Nguyen, and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 15 December 2011
Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots
A. Balocchi, J. Renard, C. T. Nguyen, B. Gayral, T. Amand, H. Mariette, B. Daudin, G. Tourbot, and X. Marie
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 15 December 2011
Density of trap states in organic photovoltaic materials from LESR studies of carrier recombination kinetics
Claudio Carati, Lucia Bonoldi, and Riccardo Po
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 14 December 2011
Effects of atomic ordering on the electronic and optical properties of self-assembled InxGa1−xAs/GaAs semiconductor quantum dots
Ranber Singh and Gabriel Bester
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 14 December 2011
Strong Purcell effect observed in single thick-shell CdSe/CdS nanocrystals coupled to localized surface plasmons
D. Canneson, I. Mallek-Zouari, S. Buil, X. Quélin, C. Javaux, B. Mahler, B. Dubertret, and J.-P. Hermier
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 13 December 2011
Mechanism for large thermoelectric power in molecular quantum dots described by the negative-U Anderson model
S. Andergassen, T. A. Costi, and V. Zlatić
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 13 December 2011
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
Muhammad Usman, Christopher A. Broderick, Andrew Lindsay, and Eoin P. O’Reilly
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 09 December 2011
Theory of spin blockade, charge ratchet effect, and thermoelectrical behavior in serially coupled quantum dot system
David M.-T. Kuo, Shiue-Yuan Shiau, and Yia-chung Chang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 09 December 2011
Electron g-factor anisotropy in GaAs/Al1−xGaxAs quantum wells of different symmetry
Yu. A. Nefyodov, A. V. Shchepetilnikov, I. V. Kukushkin, W. Dietsche, and S. Schmult
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 08 December 2011
Response of the microwave-induced cyclotron harmonic resistance spike to an in-plane magnetic field
Yanhua Dai, Kristjan Stone, Ivan Knez, Chi Zhang, R. R. Du, Changli Yang, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 07 December 2011
Effect of strain on low-loss electron energy loss spectra of group-III nitrides
J. Palisaitis, C.-L. Hsiao, M. Junaid, J. Birch, L. Hultman, and P. O. Å. Persson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 07 December 2011
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
Karine Hestroffer, Cédric Leclere, Catherine Bougerol, Hubert Renevier, and Bruno Daudin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 07 December 2011
Energy levels of triangular and hexagonal graphene quantum dots: A comparative study between the tight-binding and Dirac equation approach
M. Zarenia, A. Chaves, G. A. Farias, and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 07 December 2011
Electronic structure of EuN: Growth, spectroscopy, and theory
J. H. Richter, B. J. Ruck, M. Simpson, F. Natali, N. O. V. Plank, M. Azeem, H. J. Trodahl, A. R. H. Preston, B. Chen, J. McNulty, K. E. Smith, A. Tadich, B. Cowie, A. Svane, M. van Schilfgaarde, and W. R. L. Lambrecht
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 06 December 2011
Two-photon indirect optical injection and two-color coherent control in bulk silicon
J. L. Cheng, J. Rioux, and J. E. Sipe
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 06 December 2011
Multiphoton microwave photoresistance in a high-mobility two-dimensional electron gas
A. T. Hatke, M. Khodas, M. A. Zudov, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 06 December 2011
Simple quantum logic gate with quantum dot cavity QED systems
T. D. Ladd and Y. Yamamoto
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 06 December 2011
G0W0 band gap of ZnO: Effects of plasmon-pole models
M. Stankovski, G. Antonius, D. Waroquiers, A. Miglio, H. Dixit, K. Sankaran, M. Giantomassi, X. Gonze, M. Côté, and G.-M. Rignanese
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 05 December 2011
Spin-orbit-enhanced Wigner localization in quantum dots
A. Cavalli, F. Malet, J. C. Cremon, and S. M. Reimann
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 05 December 2011
Excitonic Aharonov-Bohm effect in a two-dimensional quantum ring
C. González-Santander, F. Domínguez-Adame, and R. A. Römer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
State-resolved observation in real time of the structural dynamics of multiexcitons in semiconductor nanocrystals
Samuel L. Sewall, Ryan R. Cooney, Eva A. Dias, Pooja Tyagi, and Patanjali Kambhampati
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
Oliver Bierwagen, Soojeong Choi, and James S. Speck
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
Structural and optical characterization of ZnS nanoparticles co-doped with Mn and Te
Pages 541-545
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Allowed and forbidden Raman scattering mechanisms for detection of coherent LO phonon and plasmon-coupled modes in GaAs
Kunie Ishioka, Amlan Kumar Basak, and Hrvoje Petek
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
Low frequency Raman scattering of anatase titanium dioxide nanocrystals
Pages 614-617
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Effects of Co doping on the phase transformation and optical properties of TiO2 thin films by sol–gel method
Pages 550-554
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Effects of hydrostatic pressure on intrawell and interwell excitons in a strained GaAs/GaAlAs double quantum well system
Pages 590-596
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition
Pages 659-664
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Full counting statistics of Kondo-type tunneling in a quantum dot: Fluctuation effects of the slave-boson field
Bing Dong, G. H. Ding, and X. L. Lei
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
Controlling the optics of quantum dots with nanomechanical strain
Garnett W. Bryant, M. Zieliński, Natalia Malkova, James Sims, W. Jaskólski, and Javier Aizpurua
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
Synthesis and properties of CdSe Quantum Dot sensitized ZnO nanocomposites
Pages 555-564
Physica E, Vol: 44, No: 3 , published: 01 December 2011
A detailed study of physical properties of ZnS quantum dots synthesized by reverse micelle method
Pages 641-646
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
Pages 686-689
Physica E, Vol: 44, No: 3 , published: 01 December 2011
New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires
Pages 690-695
Physica E, Vol: 44, No: 3 , published: 01 December 2011
VLS synthesis of disordered CdSe nanowires and optical properties of an individual CdSe nanowire
Pages 696-699
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Electron–hole transition energy for a spherical quantum dot confined in a nano-cylindrical wire
Pages 728-732
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Asymmetric transmission-induced probe-configuration-dependent dephasing in an Aharonov-Bohm ring
Kuan-Ting Lin, Yiping Lin, C. C. Chi, and J. C. Chen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 01 December 2011
A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications
Pages 708-713
Physica E, Vol: 44, No: 3 , published: 01 December 2011
Lattice dynamics of Sb2Te3 at high pressures
O. Gomis, R. Vilaplana, F. J. Manjón, P. Rodríguez-Hernández, E. Pérez-González, A. Muñoz, V. Kucek, and C. Drasar
Phys. Rev. B: Condens. Matter, Vol: 84, No: 17 , published: 28 November 2011
Anisotropic effective mass of orthoexcitons in Cu2O
Dietmar Fröhlich, Jan Brandt, Christian Sandfort, Manfred Bayer, and Heinrich Stolz
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 28 November 2011
Microscopic structure of a VH4 center trapped by C in Si
Chao Peng, Haoxiang Zhang, Michael Stavola, W. Beall Fowler, Benjamin Esham, Stefan K. Estreicher, Andris Docaj, Lode Carnel, and Mike Seacrist
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 28 November 2011
Space-charge-limited magnetoresistance in organic semiconductors
Pages 56-58
Phys. Lett. A, Vol: 376, No: 1 , published: 28 November 2011
Low-temperature thermoelectric, galvanomagnetic, and thermodynamic properties of the type-I clathrate Ba8AuxSi46−x
U. Aydemir, C. Candolfi, A. Ormeci, Y. Oztan, M. Baitinger, N. Oeschler, F. Steglich, and Yu. Grin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 28 November 2011
Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility
Javier Dacuña and Alberto Salleo
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 28 November 2011
First- and second-order piezoelectricity in III-V semiconductors
Annie Beya-Wakata, Pierre-Yves Prodhomme, and Gabriel Bester
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 28 November 2011
Orbital pathways for Mn2+-carrier sp-d exchange in diluted magnetic semiconductor quantum dots
Rémi Beaulac, Yong Feng, Joseph W. May, Ekaterina Badaeva, Daniel R. Gamelin, and Xiaosong Li
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 28 November 2011
Electronic structure of YbCu2Ge2 studied by soft x-ray angle-resolved photoemission spectroscopy
A. Yasui, S.-I. Fujimori, I. Kawasaki, T. Okane, Y. Takeda, Y. Saitoh, H. Yamagami, A. Sekiyama, R. Settai, T. D. Matsuda, Y. Haga, and Y. Ōnuki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 23 November 2011
Vacancy defects in CdTe thin films
D. J. Keeble, J. D. Major, L. Ravelli, W. Egger, and K. Durose
Phys. Rev. B: Condens. Matter, Vol: 84, No: 17 , published: 23 November 2011
Dielectric function and magneto-optical Voigt constant of Cu2O: A combined spectroscopic ellipsometry and polar magneto-optical Kerr spectroscopy study
Francisc Haidu, Michael Fronk, Ovidiu D. Gordan, Camelia Scarlat, Georgeta Salvan, and Dietrich R. T. Zahn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 23 November 2011
Quasiparticle band offsets of semiconductor heterojunctions from a generalized marker method
Chandrima Mitra, Björn Lange, Christoph Freysoldt, and Jörg Neugebauer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 23 November 2011
Coulomb blockade conductance-peak distribution of quantum dots under generic conditions: A system-dependent random-matrix approach
Dayasindhu Dey and Pragya Shukla
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 23 November 2011
Nonlinear transport in a two-dimensional electron gas with a periodically modulated potential
S. K. Lyo and W. Pan
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 23 November 2011
Publisher’s Note: Phase stability and the arsenic vacancy defect in InxGa1−xAs [Phys. Rev. B 84, 184108 (2011)]
S. T. Murphy, A. Chroneos, R. W. Grimes, C. Jiang, and U. Schwingenschlogl
Phys. Rev. B: Condens. Matter, Vol: 84, No: 18 , published: 22 November 2011
Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices
P. Löper, R. Müller, D. Hiller, T. Barthel, E. Malguth, S. Janz, J. C. Goldschmidt, M. Hermle, and M. Zacharias
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 22 November 2011
Phonons in Bi2S3 nanostructures: Raman scattering and first-principles studies
Yanyuan Zhao, Kun Ting Eddie Chua, Chee Kwan Gan, Jun Zhang, Bo Peng, Zeping Peng, and Qihua Xiong
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 21 November 2011
Magneto-optical Faraday and Kerr effects in topological insulator films and in other layered quantized Hall systems
Wang-Kong Tse and A. H. MacDonald
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 21 November 2011
Size-dependent persistent photocurrent and surface band bending in m-axial GaN nanowires
Hsin-Yi Chen, Reui-San Chen, Nitin K. Rajan, Fu-Chieh Chang, Li-Chyong Chen, Kuei-Hsien Chen, Ying-Jay Yang, and Mark A. Reed
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 21 November 2011
Multidimensional nanoscale materials from fused quantum dots
Luis Tortajada, Lucas V. Besteiro, Murilo L. Tiago, L. J. Gallego, James R. Chelikowsky, and M. M. G. Alemany
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 21 November 2011
Excitonic transition dynamics on front and back surfaces of ZnO thin films
Sun-Kyun Lee, Bong-Joon Kwon, Yong-Hoon Cho, Hang-Ju Ko, and Takafumi Yao
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 18 November 2011
Polaron transport in organic crystals: Temperature tuning of disorder effects
Frank Ortmann and Stephan Roche
Phys. Rev. B: Condens. Matter, Vol: 84, No: 18 , published: 18 November 2011
Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2
H. Takahashi, R. Okazaki, Y. Yasui, and I. Terasaki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 18 November 2011
Temperature dependence of the upper-branch polariton population in an organic semiconductor microcavity
David M. Coles, Paolo Michetti, Caspar Clark, Ali M. Adawi, and David G. Lidzey
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 18 November 2011
Electron and hole gas in modulation-doped GaAs/Al1−xGaxAs radial heterojunctions
Andrea Bertoni, Miquel Royo, Farah Mahawish, and Guido Goldoni
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 18 November 2011
Phase stability and the arsenic vacancy defect in InxGa1−xAs
S. T. Murphy, A. Chroneos, R. W. Grimes, C. Jiang, and U. Schwingenschlögl
Phys. Rev. B: Condens. Matter, Vol: 84, No: 18 , published: 17 November 2011
Unraveling of free-carrier absorption for terahertz radiation in heterostructures
Andreas Wacker, Gerald Bastard, Francesca Carosella, Robson Ferreira, and Emmanuel Dupont
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 17 November 2011
Spin density waves in a semiconductor superlattice in a tilted magnetic field
Liqiu Zheng, D. C. Marinescu, and G. F. Giuliani
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 17 November 2011
Capacitively coupled double quantum dot system in the Kondo regime
Irisnei L. Ferreira, P. A. Orellana, G. B. Martins, F. M. Souza, and E. Vernek
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 17 November 2011
Optimal quantum control for conditional rotation of exciton qubits in semiconductor quantum dots
Reuble Mathew, Craig E. Pryor, Michael E. Flatté, and Kimberley C. Hall
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 17 November 2011
Titanium forms a resonant level in the conduction band of PbTe
Jan D. König, Michele D. Nielsen, Yi-Bin Gao, Markus Winkler, Alexandre Jacquot, Harald Böttner, and Joseph P. Heremans
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 16 November 2011
Manipulating the Rashba-type spin splitting and spin texture of Pb quantum well states
Bartosz Slomski, Gabriel Landolt, Fabian Meier, Luc Patthey, Gustav Bihlmayer, Jürg Osterwalder, and J. Hugo Dil
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 16 November 2011
Detecting a Majorana-fermion zero mode using a quantum dot
Dong E. Liu and Harold U. Baranger
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 16 November 2011
Mechanically probing coherent tunneling in a double quantum dot
J. Gardner, S. D. Bennett, and A. A. Clerk
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 16 November 2011
Femtosecond optical excitation of coherent acoustic phonons in a piezoelectric p-n junction
Yu-Chieh Wen, Gia-Wei Chern, Kung-Hsuan Lin, Jeffrey Jarren Yeh, and Chi-Kuang Sun
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 16 November 2011
Electronic structure of realistically extended atomistically resolved disordered Si:P δ-doped layers
Sunhee Lee, Hoon Ryu, Huw Campbell, Lloyd C. L. Hollenberg, Michelle Y. Simmons, and Gerhard Klimeck
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Triplet exciton dynamics in rubrene single crystals
Aleksandr Ryasnyanskiy and Ivan Biaggio
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 14 November 2011
Electronic structure of PTCDA on Sn/Si(111)-3×√3
H. M. Zhang, J. B. Gustafsson, and L. S. O. Johansson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Thermopower with broken time-reversal symmetry
Keiji Saito, Giuliano Benenti, Giulio Casati, and Tomaž Prosen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Thermoelectric transport of mesoscopic conductors coupled to voltage and thermal probes
David Sánchez and Llorenç Serra
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Coherent photocurrent control in a magnetic field through quantum interference
Kiran M. Rao and J. E. Sipe
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Ab initio study of height contrast in scanning tunneling microscopy of Ge/Si surface layers grown on Si(111) in presence of Bi
Ruslan Zhachuk and José Coutinho
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 14 November 2011
Anomalous mass enhancement in strongly correlated quantum wells
Satoshi Okamoto
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Dynamics of excitons and free carriers in hybrid organic-inorganic quantum well structures
Yu. Gladush, C. Piermarocchi, and V. Agranovich
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Extracting the density profile of an electronic wave function in a quantum dot
Erin E. Boyd and Robert M. Westervelt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Electroluminescence of molecules in a scanning tunneling microscope: Role of tunneling electrons and surface plasmons
Guangjun Tian and Yi Luo
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects
Ken K. Chin
J. Semicond., Vol: 32, No: 11 , published: 11 November 2011
Universal scaling relations for the thermoelectric power factor of semiconducting nanostructures
Jane E. Cornett and Oded Rabin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 11 November 2011
Direct versus indirect optical recombination in Ge films grown on Si substrates
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menéndez
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 11 November 2011
Theory of nonequilibrium single-electron dynamics in STM imaging of dangling bonds on a hydrogenated silicon surface
Lucian Livadaru, Jason Pitters, Marco Taucer, and Robert A. Wolkow
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 11 November 2011
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Ji Panfeng , Liu Naixin, Wei Tongbo, Liu Zhe, Lu Hongxi, Wang Junxi,  Li Jinmin
J. Semicond., Vol: 32, No: 11 , published: 11 November 2011
Spectroscopic signatures of many-body interactions and delocalized states in self-assembled lateral quantum dot molecules
X. Zhou, S. Sanwlani, W. Liu, J. H. Lee, Zh. M. Wang, G. Salamo, and M. F. Doty
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 11 November 2011
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Li Zhicong, Li Panpan, Wang Bing, Li Hongjian, Liang Meng, Yao Ran, Li Jing, Deng Yuanming, Yi Xiaoyan, Wang Guohong,  Li Jinmin
J. Semicond., Vol: 32, No: 11 , published: 11 November 2011
Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells
Zhu Jun, Ban Shiliang, Ha Sihua
J. Semicond., Vol: 32, No: 11 , published: 11 November 2011
GIDL current degradation in LDD nMOSFET under hot hole stress
Chen Haifeng, Ma Xiaohua, Guo Lixin,  Du Huimin
J. Semicond., Vol: 32, No: 11 , published: 11 November 2011
Quasiparticle band structures of β-HgS, HgSe, and HgTe
A. Svane, N. E. Christensen, M. Cardona, A. N. Chantis, M. van Schilfgaarde, and T. Kotani
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 10 November 2011
Electronic properties of polar and nonpolar InN surfaces: A quasiparticle picture
A. Belabbes, J. Furthmüller, and F. Bechstedt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 10 November 2011
Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x 1)
Florian Furtmayr, Jörg Teubert, Pascal Becker, Sonia Conesa-Boj, Joan Ramon Morante, Alexey Chernikov, Sören Schäfer, Sangam Chatterjee, Jordi Arbiol, and Martin Eickhoff
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 10 November 2011
Spin-phonon coupling in single Mn-doped CdTe quantum dot
C. L. Cao, L. Besombes, and J. Fernández-Rossier
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 10 November 2011
Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals
Jiayue Xu, Qingbo He, Hui Shen, Min Jin, Yan Zhang, Xinhua Li
Cryst. Res. Technol., Vol: 46, No: 11 , published: 10 November 2011
Phonon effects on the radiative recombination of excitons in double quantum dots
Paweł Karwat, Anna Sitek, and Paweł Machnikowski
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 09 November 2011
Strong spin-orbit interaction and helical hole states in Ge/Si nanowires
Christoph Kloeffel, Mircea Trif, and Daniel Loss
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 09 November 2011
Luminescence spectra of quantum dots in microcavities. III. Multiple quantum dots
F. P. Laussy, A. Laucht, E. del Valle, J. J. Finley, and J. M. Villas-Bôas
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 09 November 2011
Positronium formation via excitonlike states on Si and Ge surfaces
D. B. Cassidy, T. H. Hisakado, H. W. K. Tom, and A. P. Mills, Jr.
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 08 November 2011
Infrared reflectance and transmission spectra in II-VI alloys and superlattices
Devki N. Talwar, Tzuen-Rong Yang, Zhe Chuan Feng, and P. Becla
Phys. Rev. B: Condens. Matter, Vol: 84, No: 17 , published: 08 November 2011
Long-time dynamics and stationary nonequilibrium of an optically driven strongly confined quantum dot coupled to phonons
M. Glässl, A. Vagov, S. Lüker, D. E. Reiter, M. D. Croitoru, P. Machnikowski, V. M. Axt, and T. Kuhn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 08 November 2011
Bistability phenomena in one-dimensional polariton wires
E. B. Magnusson, I. G. Savenko, and I. A. Shelykh
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 07 November 2011
Fano-type interference in quantum dots coupled between metallic and superconducting leads
Jan Barański and T. Domański
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 07 November 2011
Geometric blockade in a quantum dot coupled to two-dimensional and three-dimensional electron gases
K. Yamada, M. Stopa, T. Hatano, T. Yamaguchi, T. Ota, Y. Tokura, and S. Tarucha
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 07 November 2011
Current-Voltage Characteristics, Relaxation Properties, and Photosensitivity of Polythiopentacene Films
Gorishnyi M.P.
Укр. фiз. ж., Vol: 56, No: 11 , published: 06 November 2011
Two-Electron Quantum Dots with Parabolic Confinement (Low Lying Para- and Ortho-States)
Mengesha Menberu, Mal’nev V.N.
Укр. фiз. ж., Vol: 56, No: 11 , published: 06 November 2011
Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
Luiz Cláudio de Carvalho, André Schleife, and Friedhelm Bechstedt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 04 November 2011
Surface atomic and electronic structure of Mn5Ge3 on Ge(111)
J. Hirvonen Grytzelius, H. M. Zhang, and L. S. O. Johansson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 04 November 2011
Compensation-doped silicon for photovoltaic applications
Georgy Samsonidze, Marvin L. Cohen, and Steven G. Louie
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 04 November 2011
Effect of photogenerated carriers on the spectral diffusion of a quantum dot coupled to a photonic crystal cavity
Arka Majumdar, Erik D. Kim, and Jelena Vučković
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 04 November 2011
Measurement of the g-factor tensor in a quantum dot and disentanglement of exciton spins
B. J. Witek, R. W. Heeres, U. Perinetti, E. P. A. M. Bakkers, L. P. Kouwenhoven, and V. Zwiller
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 04 November 2011
Second-layer nucleation in coherent Stranski-Krastanov growth of quantum dots
José Emilio Prieto and Ivan Markov
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 04 November 2011
Effect of Coulomb interaction on exciton-polariton condensates in GaAs pillar microcavities
A. S. Brichkin, S. I. Novikov, A. V. Larionov, V. D. Kulakovskii, M. M. Glazov, C. Schneider, S. Höfling, M. Kamp, and A. Forchel
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 03 November 2011
Photophysics of pentacene thin films: The role of exciton fission and heating effects
Akshay Rao, Mark W. B. Wilson, Sebastian Albert-Seifried, Riccardo Di Pietro, and Richard H. Friend
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 03 November 2011
Single InAs1−xPx/InP quantum dots as telecommunications-band photon sources
D. Elvira, R. Hostein, B. Fain, L. Monniello, A. Michon, G. Beaudoin, R. Braive, I. Robert-Philip, I. Abram, I. Sagnes, and A. Beveratos
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 03 November 2011
Temperature dependence of the Raman spectrum in Ge1−ySny and Ge1−xySixSny alloys
Sampriti Bagchi, Christian D. Poweleit, Richard T. Beeler, John Kouvetakis, and José Menéndez
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 02 November 2011
Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires under hydrostatic pressure
Pages 356-360
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Enhanced Kerr nonlinearity in a tunnel-coupled double quantum wells
Pages 464-469
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Shallow impurity properties of EuS/PbS/EuS finite confining potential quantum well
Pages 487-494
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Barrier width and built-in electric field effects on hydrogenic impurity in wurtzite GaN/AlGaN quantum well
Pages 511-514
Physica E, Vol: 44, No: 2 , published: 01 November 2011
The effect of the intense laser field on the intersubband transitions in Ga1−xInxNyAs1−y/GaAs single quantum well
Pages 515-520
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Free induction decay of a superposition stored in a quantum dot
A. J. Bennett, M. A. Pooley, R. M. Stevenson, I. Farrer, D. A. Ritchie, and A. J. Shields
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 01 November 2011
Electric-field manipulation of the Landé g tensor of a hole in an In0.5Ga0.5As/GaAs self-assembled quantum dot
Joseph Pingenot, Craig E. Pryor, and Michael E. Flatté
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 01 November 2011
Stress tuning of strong and weak couplings between quantum dots and cavity modes in microdisk microcavities
Hsuan Lin, Chia-Hsien Lin, Wei-Chen Lai, Yi-Shan Lee, Sheng-Di Lin, and Wen-Hao Chang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 01 November 2011
Dark current characteristics of InAs/GaNAs strain-compensated quantum dot solar cells
Pages 390-393
Physica E, Vol: 44, No: 2 , published: 01 November 2011
First-principles study on structural, electronic and magnetic properties of ZnO nanotube filled with Fe, Co and Ni nanowires
Pages 405-410
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Hamiltonian approach to the charge transfer statistics of Kondo quantum dots contacted by a normal metal and a superconductor
Pages 425-429
Physica E, Vol: 44, No: 2 , published: 01 November 2011
The effect of the polarization charges on the optical properties of a spherical quantum dot with an off-central hydrogenic impurity
Pages 476-482
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Effect of image charge on double quantum dot evolution
Pages 501-505
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Binding energy of hydrogen-like donor impurity and photoionization cross-section in InAs Pöschl–Teller quantum ring under applied magnetic field
Pages 419-424
Physica E, Vol: 44, No: 2 , published: 01 November 2011
Mechanism of Fermi level pinning at metal/germanium interfaces
K. Kasahara, S. Yamada, K. Sawano, M. Miyao, and K. Hamaya
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 01 November 2011
Paraexcitons of Cu2O confined by a strain trap and high magnetic fields
Christian Sandfort, Jan Brandt, Christoph Finke, Dietmar Fröhlich, Manfred Bayer, Heinrich Stolz, and Nobuko Naka
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 31 October 2011
Mobility in gated GaNxAs1−x heterostructures as a probe of nitrogen-related electronic states
J. Buckeridge and S. Fahy
Phys. Rev. B: Condens. Matter, Vol: 84, No: 14 , published: 31 October 2011
Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells
D. J. English, P. G. Lagoudakis, R. T. Harley, P. S. Eldridge, J. Hübner, and M. Oestreich
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 31 October 2011
Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs
YenTing Chiu, Medini Padmanabhan, T. Gokmen, J. Shabani, E. Tutuc, M. Shayegan, and R. Winkler
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 31 October 2011
Electrically controlled quantum gates for two-spin qubits in two double quantum dots
Guy Ramon
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 31 October 2011
Optical orientation of bright excitons in InAs/GaAs quantum dots: Influence of a Faraday magnetic field and the dark exciton states
S. Sancho, M. Chaouache, M. A. Maaref, F. Bernardot, B. Eble, A. Lemaître, and C. Testelin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 31 October 2011
Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study
A. Carvalho, D. J. Backlund, and S. K. Estreicher
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 31 October 2011
Influence of strain on anisotropic thermoelectric transport in Bi2Te3 and Sb2Te3
N. F. Hinsche, B. Yu. Yavorsky, I. Mertig, and P. Zahn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 28 October 2011
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
G. Pozina, S. Khromov, C. Hemmingsson, L. Hultman, and B. Monemar
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 27 October 2011
Effective mass modeling of excitons in type-II quantum dot heterostructures
E. J. Tyrrell and J. M. Smith
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 27 October 2011
Phonon polaritons enhance near-field thermal transfer across the phase transition of VO2
P. J. van Zwol, K. Joulain, P. Ben-Abdallah, and J. Chevrier
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 27 October 2011
First-principles density functional theory study of native point defects in Bi2Te3
Adham Hashibon and Christian Elsässer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 14 , published: 27 October 2011
Intervalley coupling for interface-bound electrons in silicon: An effective mass study
A. L. Saraiva, M. J. Calderón, Rodrigo B. Capaz, Xuedong Hu, S. Das Sarma, and Belita Koiller
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 27 October 2011
Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys
J. P. Leitão, A. Carvalho, J. Coutinho, R. N. Pereira, N. M. Santos, A. O. Ankiewicz, N. A. Sobolev, M. Barroso, J. Lundsgaard Hansen, A. Nylandsted Larsen, and P. R. Briddon
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 25 October 2011
Modeling of the transient mobility in disordered organic semiconductors with a Gaussian density of states
W. Chr. Germs, J. J. M. van der Holst, S. L. M. van Mensfoort, P. A. Bobbert, and R. Coehoorn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 25 October 2011
Band structure modulation of ZnSe/ZnTe nanowires under strain
R. Peköz and J.-Y. Raty
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 25 October 2011
Effect of intraband Coulomb repulsion on the excitonic spin-density wave
Björn Zocher, Carsten Timm, and P. M. R. Brydon
Phys. Rev. B: Condens. Matter, Vol: 84, No: 14 , published: 24 October 2011
Direct measurement of density of states in pentacene thin film transistors
S. Yogev, E. Halpern, R. Matsubara, M. Nakamura, and Y. Rosenwaks
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 24 October 2011
Zeeman splitting and diamagnetic shift of spatially confined quantum-well exciton polaritons in an external magnetic field
A. Rahimi-Iman, C. Schneider, J. Fischer, S. Holzinger, M. Amthor, S. Höfling, S. Reitzenstein, L. Worschech, M. Kamp, and A. Forchel
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 24 October 2011
Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications
Manuel J. Romero, Hui Du, Glenn Teeter, Yanfa Yan, and Mowafak M. Al-Jassim
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 24 October 2011
A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects
Sung-Min Hong, Matz G., Jungemann C.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Impact Ionization in InAs Electron Avalanche Photodiodes
Marshall A.R.J., David J.P.R., Chee Hing Tan
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Low-Cost ZnO-Based Ultraviolet–Infrared Dual-Band Detector Sensitized With PbS Quantum Dots
Jayaweera P.V.V., Pitigala, P.K.D.D.P., Jia Feng Shao, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Monte Carlo Study of the Dynamic Performance of a 100-nm-Gate InAlAs/InGaAs Velocity Modulation Transistor
Vasallo B.G., Wichmann N., Bollaert S., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Emerging N-Face GaN HEMT Technology: A Cellular Monte Carlo Study
Marino F.A., Saraniti M., Faralli N., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
Sahoo K.C., Chien-I Kuo, Yiming Li, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs
Buono B., Ghandi R., Domeij M., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
InAlAs/InGaAs Interband Tunnel Diodes for SRAM
Sutar S., Qin Zhang, Seabaugh A.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs
Bulucea C., Bahl S.R., French W.D., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
Jimenez D., Miranda E., Godoy, A.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Hierarchical Simulation of Statistical Variability: From 3-D MC With “ ab initio” Ionized Impurity Scattering to Statistical Compact Models
Kovac U., Alexander C., Roy G., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications
Rengel R., Martin M.J.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs
Ruiz F.J.G., Tienda-Luna I.M., Godoy A., ET AL.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Physical Origins of Threshold Voltage Variation Enhancement in Si(110) n/pMOSFETs
Saitoh M., Yasutake N., Nakabayashi Y., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation
Dadgour H.F., Endo K., De V.K., at al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design
Dadgour H.F., Endo K., De V.K., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Insulating Halos to Boost Planar NMOSFET Performance
Wen-Wei Hsu, Chao-Yun Lai, Chee Wee Liu, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics
Sonnet A.M., Hinkle C.L., Dawei Heh, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
A Compact Model for Undoped Symmetric Double-Gate Polysilicon Thin-Film Transistors
Junkai Huang, Wanling Deng, Xueren Zheng, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient Stresses
Malobabic S., Salcedo J.A., Hajjar J., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits
Oritsuki Y., Yokomichi M., Kajiwara T.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode
Heung-Jae Cho, Younghwan Son, Byoungchan Oh
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors
Varghese D., Moens P., Alam M.A.
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film
Fu-Chien Chiu
IEEE Trans. Electron Devices , Vol: 57, No: 10 , published: 23 October 2011
Microwave-enhanced hopping conductivity: A non-Ohmic effect
Z. Ovadyahu
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 21 October 2011
Spin-orbital Kondo effect in a parallel double quantum dot
Yuma Okazaki, Satoshi Sasaki, and Koji Muraki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 21 October 2011
Observation of sequential spin flips in quantum rings
E. Räsänen, A. Mühle, M. Aichinger, and R. J. Haug
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 21 October 2011
Magnetophotoluminescence study of intershell exchange interaction in CdTe/ZnTe quantum dots
T. Kazimierczuk, T. Smoleński, M. Goryca, Ł. Kłopotowski, P. Wojnar, K. Fronc, A. Golnik, M. Nawrocki, J. A. Gaj, and P. Kossacki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 21 October 2011
Electronic structure and transport anisotropy of Bi2Te3 and Sb2Te3
B. Yu. Yavorsky, N. F. Hinsche, I. Mertig, and P. Zahn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 20 October 2011
Ab-initio Electronic and Structural Properties of Rutile Titanium Dioxide
Chinedu E. Ekuma, Diola Bagayoko
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Bipolar Thermoelectric Effect in a Serially Coupled Quantum Dot System
David M.-T. Kuo, Yia-chung Chang
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Broadband Second-Harmonic Generation in the Near-Infrared Region in a Tapered Zinc Selenide Slab Using Total Internal Reflection Quasi-Phase Matching
Ardhendu Saha, Sumita Deb
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
UV Photodetectors Based on ZnO Nanorods: Role of Defect-Concentration
Basant Chitara, Leela Srinivas Panchakarla, Salaru Baba Krupanidhi,  C. N. R. Rao
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
Akira Endoh, Issei Watanabe, Takashi Mimura, Toshiaki Matsui
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors
Atsushi Nakajima, Kunitaka Fujii, Kazushige Horio
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes
Kenji Sadakuni-Makabe, Mitsushi Suzuno, Kazunori Harada, Hiro Akinaga, Takashi Suemasu
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment
T. S. Shamirzaev, J. Debus, D. S. Abramkin, D. Dunker, D. R. Yakovlev, D. V. Dmitriev, A. K. Gutakovskii, L. S. Braginsky, K. S. Zhuravlev, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 20 October 2011
Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition
Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Photoluminescent Characteristics of Mn2+ Centers Selectively Substituted for Different Cations in CuAlS2
Yoshinobu Miyamoto, Tetsuo Honma, Koutoku Ohmi
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
Norimasa Yafune, Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaaki Kuzuhara
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides
Hyunsoo Kim, Seongjun Kim, Kyoung-Kook Kim, Sung-Nam Lee, Kwang-Soon Ahn
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Organic/Inorganic Hybrid p–n Junctions Made of Pentacene–SnO2 Nanowires Network
Sung Chan Park, Junghwan Huh, Daeil Kim, Seongmin Yee, Gyu Tae Kim, Jeong Sook Ha
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Suppression of Leakage Current of Metal–Insulator–Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer
Osamu Tonomura, Hiroshi Miki, Ken-ichi Takeda
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics
Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Rihito Kuroda, Naoto Miyamoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa,  Tadahiro Ohmi
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Manipulation of the Landé g factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical, and perturbation methods
Sanjay Prabhakar, James E. Raynolds, and Roderick Melnik
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 19 October 2011
Local electronic structure of Cu-doped GaN investigated by XANES and x-ray linear dichrosim
R. Schuber, P. R. Ganz, F. Wilhelm, A. Rogalev, and D. M. Schaadt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 18 October 2011
Optical and phonon excitations of modified Pandey chains at the Si(111)-2×1 surface
Charles H. Patterson, Soumya Banerjee, and John F. McGilp
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 18 October 2011
High-temperature charge and thermal transport properties of the n-type thermoelectric material PbSe
John Androulakis, Duck-Young Chung, Xianli Su, Li Zhang, Ctirad Uher, Thomas C. Hasapis, Euripides Hatzikraniotis, Konstantinos M. Paraskevopoulos, and Mercouri G. Kanatzidis
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 18 October 2011
Theory of spatially inhomogeneous Bloch oscillations in semiconductor superlattices
L. L. Bonilla, M. Álvaro, and M. Carretero
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 18 October 2011
Enhanced valence force field model for the lattice properties of gallium arsenide
Sebastian Steiger, Mehdi Salmani-Jelodar, Denis Areshkin, Abhijeet Paul, Tillmann Kubis, Michael Povolotskyi, Hong-Hyun Park, and Gerhard Klimeck
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 17 October 2011
Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures
J.-Z. Zhang, A. Dyson, and B. K. Ridley
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 17 October 2011
Characterization of wurtzite ZnO using valence electron energy loss spectroscopy
Michael R. S. Huang, Rolf Erni, Hsin-Ying Lin, Ruey-Chi Wang, and Chuan-Pu Liu
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 17 October 2011
Optics, morphology, and growth kinetics of GaAs/AlxGa1-xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy
N. Moret, D. Y. Oberli, E. Pelucchi, N. Gogneau, A. Rudra, and E. Kapon
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 17 October 2011
Design of quantum dot lattices in amorphous matrices by ion beam irradiation
M. Buljan, I. Bogdanović-Radović, M. Karlušić, U. V. Desnica, N. Radić, M. Jakšić, K. Salamon, G. Dražić, S. Bernstorff, and V. Holý
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 17 October 2011
Ширина запрещенной зоны кристаллов CdTe и Cd0.9Zn0.1Te
Косяченко Л.А., Склярчук В.М., Склярчук О.В., Маслянчук О.Л.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure
Degheidy A.R., Elkenany E.B.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Влияние примеси Sn на оптические и структурные свойства тонких кремниевых пленок
Войтович В.В., Неймаш В.Б., Красько Н.Н., Колосюк А.Г., Поварчук В.Ю., Руденко Р.М., Макара В.А., Петруня Р.В., Юхимчук В.О., Стрельчук В.В.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Примесные центры олова в стеклообразных халькогенидах германия
Бордовский Г.А., Гладких П.В., Кожокарь М.Ю., Марченко А.В., Серегин П.П., Теруков Е.И.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии
Иванов П.А., Потапов А.С., Самсонова Т.П., Korol'kov O., Sleptsuk N.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Магнитные и электрические свойства интеркалированных фаз в системе (Cr,Cu)-HfSe2
Плещев В.Г., Баранов Н.В., Шишкин Д.А., Королев А.В., Горлов А.Д.
Физ. тверд. тела, Vol: 53, No: 10 , published: 15 October 2011
Исследование электрических свойств тонких пленок SmS при высоких давлениях
Каминский В.В., Степанов Н.Н., Молодых А.А., Соловьев С.М.
Физ. тверд. тела, Vol: 53, No: 10 , published: 15 October 2011
Особенности анизотропии микроволнового низкотемпературного магнитосопротивления слабо легированного p-Ge, обусловленные наличием в нем легких и тяжелых дырок
Вейнгер А.И., Забродский А.Г., Тиснек Т.В., Голощапов С.И.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Оптические спектры шести фаз кремния
Соболев В.В., Соболев В.Вал., Шушков С.В.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Фотоэлектрические свойства пористых гетероструктур GaN/SiC
Мынбаева М.Г., Ситникова А.А., Мынбаев К.Д.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Выращивание пленок твердого раствора (GaAs)1-x(ZnSe)x и исследование их структурных и некоторых фотоэлектрических свойств
Саидов А.С., Саидов М.С., Усмонов Ш.Н., Лейдерман А.Ю., Каланов М.У., Гаимназаров К.Г., Курмантаев А.Н.
Физ. тверд. тела, Vol: 53, No: 10 , published: 15 October 2011
Рассеяние и подвижность электронов в комбинированно-легированных HFET-структурах AlGaAs/InGaAs/AlGaAs с высокой концентрацией электронов
Хабибуллин Р.А., Васильевский И.С., Галиев Г.Б., Климов Е.А., Пономарев Д.С., Лунин Р.А., Кульбачинский В.А.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Исследование влияния параметров затворной области на статические характеристики полевых СВЧ-транзисторов на основе псевдоморфных гетероструктур AlGaAs--InGaAs--GaAs
Тихомиров В.Г., Малеев Н.А., Кузьменков А.Г., Соловьев Ю.В., Гладышев А.Г., Кулагина М.М., Земляков В.Е., Дудинов К.В., Янкевич В.Б., Бобыль А.В., Устинов В.М.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Упругие поля и физические свойства поверхностных квантовых точек
Берт Н.А., Колесникова А.Л., Королев И.К., Романов А.Е., Фрейдин А.Б., Чалдышев В.В., Aifantis E.C.
Физ. тверд. тела, Vol: 53, No: 10 , published: 15 October 2011
Магнитолюминесценция структур CdTe/MnTe/CdMgTe с ультратонкими слоями MnTe
Агекян В.Ф., Holtz P.O., Karczewski G., Кац В.Н., Москаленко Е.С., Серов А.Ю., Философов Н.Г.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Лазеры с сильнонапряженной квантовой ямой GaInAs с компенсирующими слоями GaAsP, излучающие на длине волны 1220 нм, выращенные методом МОС-гидридной эпитаксии на подложке GaAs
Винокуров Д.А., Капитонов В.А., Николаев Д.Н., Пихтин Н.А., Станкевич А.Л., Шамахов В.В., Бондарев А.Д., Вавилова Л.С., Тарасов И.С.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Интерфейсная электролюминесценция в изотипном гетеропереходе II типа InAs/InAsSbP при комнатной температуре
Григорьев М.М., Иванов Э.В., Моисеев К.Д.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
Altuntas H., Corekci S., Ozcelik S., Altindal S., Ozturk M.K.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Вольт-амперные характеристики высоковольтных 4H-SiC-диодов с барьером Шоттки высотой 1.1 эВ
Иванов П.А., Грехов И.В., Коньков О.И., Потапов А.С., Самсонова Т.П., Семенов Т.В.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation
Tan Hairen, You Jingbi, Zhang Shuguang, Gao Hongli, Yin Zhigang, Bai Yiming, Zhang Xiulan, Zhang Xingwang, Qu Sheng
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Structural and optoelectronic properties of sprayed Sb:SnO2 thin films: Effects of substrate temperature and nozzle-to-substrate distance
A. R. Babar, S. S. Shinde, A. V. Moholkar, C. H. Bhosale and K. Y. Rajpure
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Plasmon dispersion in molecular solids: Picene and potassium-doped picene
Pierluigi Cudazzo, Matteo Gatti, Friedrich Roth, Benjamin Mahns, Martin Knupfer, and Angel Rubio
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 14 October 2011
Exciton-polariton emission from organic semiconductor optical waveguides
Tal Ellenbogen and Kenneth B. Crozier
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 14 October 2011
Influence of growth conditions on the V-defects in InGaN/GaN MQWs
Ji Panfeng, Liu Naixin, Wei Xuecheng, Liu Zhe, Lu Hongxi, Wang Junxi, Jinmin
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Релаксация внутреннего поля и ее влияние на спектр и транспортные характеристики квантовой ямы
Д. А. Чечин, П. А. Мелешенко, А. В. Долгих, А. Ф. Клинских
Изв. РАН. Сер. физ., Vol: 75, No: 10 , published: 14 October 2011
Адмиттансная спектроскопия как метод исследования релаксационных процессов в квантово-размерных структурах
В. И. Зубков, И. Н. Яковлев, О. В. Кучерова, Т. А. Орлова
Изв. РАН. Сер. физ., Vol: 75, No: 10 , published: 14 October 2011
Исследование методами спектроскопии адмиттанса релаксации заряда в полупроводниковых гетероструктурах с квантовой ямой
А. Н. Петровская, В. И. Зубков
Изв. РАН. Сер. физ., Vol: 75, No: 10 , published: 14 October 2011
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
Zhang Yu, Wang Guowei, Tang Bao, Xu Yingqiang, Xu Yun, Song Guofeng
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP
Ali Ahaitouf, Abdelaziz Ahaitouf, Jean Paul Salvestrini and Hussein Srour
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge
Liu Jin, Chen Yongguang, Tan Zhiliang, Yang Jie, Zhang Xijun, Wang Zhenxing
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs
Sanjoy Deb, Saptarsi Ghosh, N Basanta Singh, A K De and Subir Kumar Sarkar
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Ultra-low specific on-resistance SOI double-gate trench-type MOSFET
Lei Tianfei, Luo Xiaorong, Ge Rui, Chen Xi, Wang Yuangang, Yao Guoliang, Jiang Yongheng, Zhang Bo, Li Zhaoji
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Two-Dimensional Magnetoexcitons in the Fractional Quantum Hall Regime
Moskalenko S.A., Liberman M.A., Novikov B.V., Kiseliova E.S., Dumanov E.V., Cerbu F.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Электронная структура аморфных пленок Si-C-N
Зацепин Д.А., Курмаев Э.З., Moewes A., Чолах С.О.
Физ. тверд. тела, Vol: 53, No: 9 , published: 13 October 2011
Enhanced thermal conductivity and isotope effect in single-layer hexagonal boron nitride
L. Lindsay and D. A. Broido
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 13 October 2011
Квантовые осцилляции сопротивления и коэффициента Холла и квантовый предел в сплавах Bi0.93Sb0.07 в магнитном поле вдоль тригональной оси
Редько Н.А., Каган В.Д., Волков М.П.
Физ. тверд. тела, Vol: 53, No: 9 , published: 13 October 2011
Influence of Structural Defects on Excitonic Photoluminescence of Pentacene
Piryatinski Yu.P., Kurik M.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Diluted Magnetic Semiconductor Effects in Mn- and Fe-Implanted Silicon Carbide
Komarov A.V., Los A.V., Ryabchenko S.M., Romanenko S.M.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Exciton Condensation in Quantum Wells. Self-Organization Against Bose-Condensation
Sugakov V.I.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Calculation of vertical and horizontal mobilities in InAs/GaSb superlattices
F. Szmulowicz, H. J. Haugan, S. Elhamri, and G. J. Brown
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 13 October 2011
Fractal Manifestations of Percolation-Cluster Structural Element in Emission Spectra of Samples with ZnSe Quantum Dots
Bondar N.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Photoluminescence Properties of Layered Pb1-xCdxI2 Solid Solutions
Gnatenko Yu.P., Fur’yer M.S., Bukivskij P.M., Skubenko P.A., Piryatinski Yu.P., Gamernyk R.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Luminescent Properties of Near-Surface Semicondictive Layers and Quantum Superlattices
Lytovchenko V.G., Korbutyak D.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Photoluminescence Study of Porous Silicon as Photosensitizer of Singlet Oxygen Generation
Timoshenko V.Yu.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Давление силы Казимира на слой диэлектрика в структурах металл-диэлектрик-полупроводник
Климчицкая Г.Л., Федорцов А.Б., Чуркин Ю.В., Юрова В.А.
Физ. тверд. тела, Vol: 53, No: 9 , published: 13 October 2011
Dielectric function of the semiconductor hole liquid: Full frequency and wave-vector dependence
John Schliemann
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 12 October 2011
Nonequilibrium transport properties of a double quantum dot in the Kondo regime
D. Breyel and A. Komnik
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 12 October 2011
Kinetics of spin relaxation in quantum wires and channels: Boundary spin echo and formation of a persistent spin helix
Valeriy A. Slipko and Yuriy V. Pershin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 12 October 2011
Indirect interband optical transitions in a semiconductor quantum ring with submicrometer dimensions
O. Vänskä, M. Kira, I. Tittonen, and S. W. Koch
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 12 October 2011
Second-harmonic and linear optical spectroscopic study of silicon nanocrystals embedded in SiO2
Junwei Wei, Adrian Wirth, Michael C. Downer, and Bernardo S. Mendoza
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 11 October 2011
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Jonas Lähnemann, Oliver Brandt, Carsten Pfüller, Timur Flissikowski, Uwe Jahn, Esperanza Luna, Michael Hanke, Matthias Knelangen, Achim Trampert, and Holger T. Grahn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 11 October 2011
Size-dependent Si nanowire mechanics are invariant to changes in the surface state
Byeongchan Lee and Robert E. Rudd
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 11 October 2011
Reduction of lattice thermal conductivity in one-dimensional quantum-dot superlattices due to phonon filtering
D. L. Nika, E. P. Pokatilov, A. A. Balandin, V. M. Fomin, A. Rastelli, and O. G. Schmidt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 10 October 2011
Low-energy plasmons in quantum-well and surface states of metallic thin films
V. M. Silkin, T. Nagao, V. Despoja, J. P. Echeverry, S. V. Eremeev, E. V. Chulkov, and P. M. Echenique
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 10 October 2011
Исследование влияния облучения электронным пучком в РЭМ на катодолюминесценцию и наведенный ток в структурах с множественными квантовыми ямами InGaN/GaN
П. С. Вергелес, Н. М. Шмидт, Е. Б. Якимов
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 10 , published: 10 October 2011
Quasiparticle band structure of Zn-IV-N2 compounds
Atchara Punya, Walter R. L. Lambrecht, and Mark van Schilfgaarde
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 07 October 2011
Insulator-metal transition of highly compressed carbon disulfide
Ranga P. Dias, Choong-Shik Yoo, Minseob Kim, and John S. Tse
Phys. Rev. B: Condens. Matter, Vol: 84, No: 14 , published: 07 October 2011
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.-M. Chauveau
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 07 October 2011
Structural Dependence of Photoluminescence and Room-Temperature Ferromagnetism in Lightly Cu-Doped ZnO Nanorods
Lin C.C., Young S.L., Kung C.Y., Chen H.Z., Kao M.C., Horng L., Shih Y.T.
IEEE Trans. Magn., Vol: 47, No: 10 , published: 06 October 2011
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well
C. A. Duque, M. E. Mora-Ramos,E. Kasapoglu,H. Sari,I. S&ouml
Phys. Status Solidi B, Vol: 249, No: 1 , published: 05 October 2011
Effects of stacking variations on the lattice dynamics of InAs nanowires
N. G. Hörmann, I. Zardo, S. Hertenberger, S. Funk, S. Bolte, M. Döblinger, G. Koblmüller, and G. Abstreiter
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 04 October 2011
Parametric polariton solitons in coherently pumped semiconductor microcavities
O. A. Egorov, D. V. Skryabin, and F. Lederer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 04 October 2011
Ab initio electronic and geometrical structures of tripotassium-intercalated phenanthrene
P. L. de Andres, A. Guijarro, and J. A. Vergés
Phys. Rev. B: Condens. Matter, Vol: 84, No: 14 , published: 03 October 2011
Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures
Pages 202-206
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Thermal conductivity of periodic array of intermolecular junctions of silicon nanowires
Pages 141-145
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Excited-state absorptions of an exciton confined in a quantum dot
Pages 218-221
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Pressure induced optical absorption and refractive index changes of a shallow hydrogenic impurity in a quantum wire
Pages 222-228
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Microstructure and optical properties of ZnO/porous silicon nanocomposite films
Pages 190-195
Physica E, Vol: 44, No: 1 , published: 01 October 2011
High field transport properties in a GaN/AlGaN heterostructure
Pages 156-162
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Computational modeling of novel InN/Al0.30In0.70N multilayer nano-heterostructure
Pages 49-55
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Two types of quantum-confinement characters for the bound states in the InGaN/GaN quantum wells
Pages 298-306
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Quantum emission efficiency of nanocrystalline and amorphous Si quantum dots
Pages 56-61
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Spin polarized Kondo transport through a quantum dot connected to ferromagnetic leads
Pages 168-171
Physica E, Vol: 44, No: 1 , published: 01 October 2011
The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot
Pages 186-189
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Electronic energy levels of nanorings with impurities and Aharonov–Bohm effects
Pages 172-178
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Effect of synthesis conditions on microstructures and photoluminescence properties of Ga doped ZnO nanorod arrays
Pages 307-312
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Optimal design of a semiconductor heterostructure tunnel diode with linear current–voltage characteristic
Pages 322-326
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement
Pages 333-338
Physica E, Vol: 44, No: 1 , published: 01 October 2011
An optimized design of 10-nm-scale dual-material surrounded gate MOSFETs for digital circuit applications
Pages 339-344
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Electronic structure and chemical bonding of the electron-poor II-V semiconductors ZnSb and ZnAs
Daryn Benson, Otto F. Sankey, and Ulrich Häussermann
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 30 September 2011
Electrical spin injection and transport in germanium
Yi Zhou, Wei Han, Li-Te Chang, Faxian Xiu, Minsheng Wang, Michael Oehme, Inga A. Fischer, Joerg Schulze, Roland. K. Kawakami, and Kang L. Wang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 30 September 2011
Charge localization and dynamical spin locking in double quantum dots driven by ac magnetic fields
Álvaro Gómez-León and Gloria Platero
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 30 September 2011
Microscopic equation-of-motion approach to the multiphonon assisted quantum emission of a semiconductor quantum dot
Julia Kabuss, Alexander Carmele, Marten Richter, and Andreas Knorr
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 30 September 2011
Photoluminescence measurements of zero-phonon optical transitions in silicon nanocrystals
I. Sychugov, J. Valenta, K. Mitsuishi, M. Fujii, and J. Linnros
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 30 September 2011
X-ray-induced electronic structure change in CuIr2S4
H. Gretarsson, Jungho Kim, D. Casa, T. Gog, K. R. Choi, S. W. Cheong, and Young-June Kim
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 29 September 2011
Эффект магнитоиндуцированной непараболичности дисперсии экситона в полупроводниках с невырожденной валентной зоной
Логинов Д.К., Чегодаев А.Д.
Ж. эксперим. и теор. физ., Vol: 140, No: 3 , published: 29 September 2011
Electronic hole transfer in rutile and anatase TiO2: Effect of a delocalization error in the density functional theory on the charge transfer barrier height
Paweł Zawadzki, Jan Rossmeisl, and Karsten Wedel Jacobsen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 29 September 2011
Electronic structure of Ga1−xMnxAs probed by four-wave mixing spectroscopy
M. Yildirim, S. March, R. Mathew, A. Gamouras, X. Liu, M. Dobrowolska, J. K. Furdyna, and K. C. Hall
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 28 September 2011
Magnetic field effects on electron-hole recombination in disordered organic semiconductors
A. I. Shushin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 28 September 2011
Spin Hall effect at interfaces between HgTe/CdTe quantum wells and metals
M. Guigou, P. Recher, J. Cayssol, and B. Trauzettel
Phys. Rev. B: Condens. Matter, Vol: 84, No: 9 , published: 28 September 2011
Parametric amplification of magnetoplasmons in semiconductor quantum dots
Guillaume Weick and Eros Mariani
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 28 September 2011
Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory
Jeremy W. Nicklas and John W. Wilkins
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 27 September 2011
Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory
Charlene Chen, Kai-Chen Cheng, Evgeniy Chagarov, and Jerzy Kanicki
Jpn. J. Appl. Phys., Vol: 50, No: 9R , published: 27 September 2011
Исследование электронного строения и химического состава пористого кремния, полученного на подложках n- и  p-типа, методами XANES и ИК спектроскопии
Леньшин А.С., Кашкаров В.М., Середин П.В., Спивак Ю.М., Мошников В.А.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Lattice dynamics and thermal properties of phononic semiconductors
S. P. Hepplestone and G. P. Srivastava
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 27 September 2011
Micro-Pump–Probe Spectroscopy of an Exciton in a Single Semiconductor Quantum Dot Using a Heterodyne Technique
Yasuyoshi Mitsumori, Yuki Miyahara, Kentaro Uedaira, Hideo Kosaka, Satoshi Shimomura, Satoshi Hiyamizu, and Keiichi Edamatsu
Jpn. J. Appl. Phys., Vol: 50, No: 9R , published: 27 September 2011
Влияние СВЧ-облучения на фотолюминесценцию связанных экситонов в монокристаллах CdTe : Cl
Корбутяк Д.В., Лоцько А.П., Вахняк Н.Д., Демчина Л.А., Конакова Р.В., Миленин В.В., Редько Р.А.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Исследование энергетических уровней примесных центров Er в Si методом баллистической электронной эмиссионной спектроскопии
Филатов Д.О., Зимовец И.А., Исаков М.А., Кузнецов В.П., Корнаухов А.В.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Исследование структуры дефектов в пленках Cdx Hg1-x Te, выращенных жидкофазной эпитаксией, с помощью низкоэнергетической ионной обработки
Ижнин И.И., Ижнин А.И., Фицыч Е.И., Смирнова Н.А., Денисов И.А., Поцяск М., Мынбаев К.Д.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Влияние примеси железа на люминесценцию и фотопроводимость кристаллов ZnSe в видимой области спектра
Ваксман Ю.Ф., Ницук Ю.А., Яцун В.В., Насибов А.С., Шапкин П.В.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Особенности фотолюминесцентных свойств квантовых точек селенида кадмия с примесью меди
Целиков Г.И., Дорофеев С.Г., Тананаев П.Н., Тимошенко В.Ю.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Effect of Moisture on the Frequency-Dependent Current of an AlGaN/GaN High-Electron-Mobility Transistor
Jeong Jin Kim, Gye Mo Yang, Kyu-Hwan Shim, and Jeon Wook Yang
Jpn. J. Appl. Phys., Vol: 50, No: 9R , published: 27 September 2011
An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT
Jinrong pu, Jiuxun Sun, Da Zhang
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
Lenka T.R., Panda A.K.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Подвижность и дрейфовая скорость электронов в селективно-легированных гетероструктурах InAlAs/InGaAs/ InAlAs
Васильевский И.С., Галиев Г.Б., Климов Е.А., Пожела К., Пожела Ю., Юцене В., Сужеделис А., Жураускене Н., Кершулис С., Станкевич В.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Лазеры с сильно напряженной квантовой ямой GaInAs с компенсирующими слоями GaAsP, излучающие на длине волны 1190 нм, выращенные методом МОС-гидридной эпитаксии на подложке GaAs
Винокуров Д.А., Николаев Д.Н., Пихтин Н.А., Станкевич А.Л., Шамахов В.В., Бондарев А.Д., Рудова Н.А., Тарасов И.С.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Simulation of long-wave phonon (λ > b) scattering at geometric imperfections in nanowires by FDTD method
E. I. Salamatov
Phys. Status Solidi B, Vol: 249, No: 1 , published: 27 September 2011
Фотолюминесценция в кремнии, имплантированном ионами кремния с аморфизующими дозами
Соболев Н.А., Калядин А.Е., Кютт Р.Н., Сахаров В.И., Серенков И.Т., Шек Е.И., Афросимов В.В., Тетельбаум Д.И.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Оптические свойства квантово-размерных гетероструктур на основе твердых растворов GaPxNyAs1-x-y
Егоров А.Ю., Крыжановская Н.В., Соболев М.С.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Особенности фотолюминесцентных свойств квантовых точек селенида кадмия с примесью меди
Целиков Г.И., Дорофеев С.Г., Тананаев П.Н., Тимошенко В.Ю.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Влияние термообработки на параметры контактов металл--полупроводник, сформированных
на халькогенизированной поверхности n-GaAs
Ерофеев Е.В., Кагадей В.А.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices
Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, and Tsunenobu Kimoto
Jpn. J. Appl. Phys., Vol: 50, No: 9R , published: 27 September 2011
Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Naotoshi Kadotani, Teruyuki Ohashi, Tsunaki Takahashi, Shunri Oda, and Ken Uchida
Jpn. J. Appl. Phys., Vol: 50, No: 9R , published: 27 September 2011
Conduction-band electronic states of YbInCu4 studied by photoemission and soft x-ray absorption spectroscopies
Yuki Utsumi, Hitoshi Sato, Hidenao Kurihara, Hiroyuki Maso, Koichi Hiraoka, Kenichi Kojima, Komei Tobimatsu, Takuo Ohkochi, Shin-ichi Fujimori, Yukiharu Takeda, Yuji Saitoh, Kojiro Mimura, Shigenori Ueda, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi, Tamio Oguchi, Kenya Shimada, Hirofumi Namatame, and Masaki Taniguchi
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 26 September 2011
Enhanced photon-assisted spin transport in a quantum dot attached to ferromagnetic leads
Fabrício M. Souza, Thiago L. Carrara, and E. Vernek
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 26 September 2011
Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer
T. Kazimierczuk, A. Golnik, P. Kossacki, J. A. Gaj, Z. R. Wasilewski, and A. Babiński
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 26 September 2011
Interaction effects on thermal transport in quantum wires
Alex Levchenko, Tobias Micklitz, Zoran Ristivojevic, and K. A. Matveev
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 26 September 2011
Tunable thermal conductivity in defect engineered nanowires at low temperatures
Sajal Dhara, Hari S. Solanki, Arvind Pawan R., Vibhor Singh, Shamashis Sengupta, B. A. Chalke, Abhishek Dhar, Mahesh Gokhale, Arnab Bhattacharya, and Mandar M. Deshmukh
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 26 September 2011
Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface
Yoshifumi Nishi, Takashi Yamauchi, Takao Marukame, Atsuhiro Kinoshita, Junji Koga, and Koichi Kato
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 26 September 2011
Study of the Raman spectra of phonons in disordered GaSb/AlSb (001) superlattices
D. Berdekas
Can. J. Phys., Vol: 88, No: 9 , published: 24 September 2011
Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks
Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, and Takashi Kita
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 23 September 2011
Low-noise conditional operation of singlet-triplet coupled quantum dot qubits
Shuo Yang and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 23 September 2011
Electronic structure of Si(110)-(16×2) studied by scanning tunneling spectroscopy and density functional theory
Martin Setvín, Veronika Brázdová, David R. Bowler, Kota Tomatsu, Kan Nakatsuji, Fumio Komori, and Kazushi Miki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 22 September 2011
Dimer-vacancy reconstructions of the GaN and ZnO(101̅ 1) surfaces: Density functional theory calculations
Woo-Jin Lee and Yong-Sung Kim
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 22 September 2011
Role of Coulomb correlations for femtosecond pump-probe signals obtained from a single quantum dot
J. Huneke, I. D'Amico, P. Machnikowski, T. Thomay, R. Bratschitsch, A. Leitenstorfer, and T. Kuhn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 22 September 2011
Исследование микроструктуры ансамблей вертикально сопряженных квантовых точек методом EXAFS-спектроскопии
С. Б. Эренбург, С. В. Трубина, Н. В. Бауск, А. И. Никифоров, А. В. Двуреченский, В. Г. Мансуров, К. С. Журавлев, С. Г. Никитенко
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 9 , published: 22 September 2011
Light propagation and Anderson localization in disordered superlattices containing dispersive metamaterials: Effects of correlated disorder
D. Mogilevtsev, F. A. Pinheiro, R. R. dos Santos, S. B. Cavalcanti, and L. E. Oliveira
Phys. Rev. B: Condens. Matter, Vol: 84, No: 9 , published: 21 September 2011
Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells
G. Rossbach, J. Levrat, A. Dussaigne, G. Cosendey, M. Glauser, M. Cobet, R. Butté, N. Grandjean, H. Teisseyre, M. Bockowski, I. Grzegory, and T. Suski
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 21 September 2011
Dynamics of elastic and inelastic energy transfer between quantum dots in a microcavity
K. J. Xu and C. Piermarocchi
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 21 September 2011
Моделирование полупроводникового лазера на основе резонансной решетки квантовых ям с внешним зеркалом
Д. В. Высоцкий, Н. Н. Елкин, А. П. Напартович, В. И. Козловский, Б. М. Лаврушин
Квант. электрон., Vol: 41, No: 9 , published: 20 September 2011
Electric-field-induced optical absorption and refractive-index changes of a shallow hydrogenic impurity in an InAs/GaAs quantum wire
N. Arunachalam,A. J. Peter,C. K. Yoo
Phys. Status Solidi B, Vol: 249, No: 1 , published: 20 September 2011
Влияние адсорбции кислорода и воды на термоэлектрическую работу выхода монокристаллов GeS
Н.Д. Савченко, Т.Н. Щурова, И.И. Опачко, Т.И. Панаит, К.О. Попович
Хiмiя,фiзiка та технологiя поверхнi, Vol: 2, No: 3 , published: 20 September 2011
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn, G. C. Tettamanzi, S. H. Park, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 19 September 2011
Relativistic effects and fully spin-polarized Fermi surface at the Tl/Si(111) surface
Julen Ibañez-Azpiroz, Asier Eiguren, and Aitor Bergara
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 19 September 2011
Observation of superfluorescence from a quantum ensemble of coherent excitons in a ZnTe crystal: Evidence for spontaneous Bose-Einstein condensation of excitons
D. C. Dai and A. P. Monkman
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 19 September 2011
Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration
S. Spatzek, S. Varwig, M. M. Glazov, I. A. Yugova, A. Schwan, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 19 September 2011
Size distribution dependence of the dielectric function of Si quantum dots described by a modified Maxwell-Garnett formulation
A.-S. Keita and A. En Naciri
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 19 September 2011
Carrier transfer effect on transport in p-i-n structures with Ge quantum dots
V. S. Lysenko, Yu. V. Gomeniuk, V. V. Strelchuk, A. S. Nikolenko, S. V. Kondratenko, Yu. N. Kozyrev, M. Yu. Rubezhanska, and C. Teichert
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 19 September 2011
Electron-electron interactions and the metal-insulator transition in heavily doped silicon
H. v. Löhneysen
Annalen der Physik , Vol: 523, No: 8-9 , published: 18 September 2011
Nonlinear transport through quantum dots studied by the time-dependent DMRG
S. Kirino and K. Ueda
Annalen der Physik , Vol: 523, No: 8-9 , published: 18 September 2011
Picosecond Carrier Lifetime in Low-Temperature-Grown GaAsSb
Xavier Wallart/Christophe Coinon/Sebastien Plissard/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 17 September 2011
Characterization and optical properties of ZnS nanorods branched out from ZnS film on Zn foil
Xinhua Zhang, Yiqing Chen, Taibo Guo and Lizhu Liu
Cryst. Res. Technol., Vol: 46, No: 9 , published: 17 September 2011
Photoluminescence from screen printed ZnO based nanocrystalline films
A. Srivastava, R. K. Shukla and K. P. Misra
Cryst. Res. Technol., Vol: 46, No: 9 , published: 17 September 2011
Structure-controlled growth of ZnO nanonails by thermal evaporation technique
M. Senthil Kumar, D. Chhikara,  K. M. K. Srivatsa
Cryst. Res. Technol., Vol: 46, No: 9 , published: 17 September 2011
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
Takaaki Tsunomura/Anil Kumar/Tomoko Mizutani/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 17 September 2011
Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
Yosuke Kuwahara/Takahiro Fujii/Yasuharu Fujiyama/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 17 September 2011
Fast Differential Reflectance Spectroscopy of Semiconductor Structures for Infrared Applications by Using Fourier Transform Spectrometer
Marcin Motyka/Jan Misiewicz
Appl. Phys. Express, Vol: 3, No: 11 , published: 16 September 2011
Short-period (Ga,Mn)As/(Al,Ga)As multilayer structures studied by cross-sectional scanning tunneling microscopy
S. J. C. Mauger, M. Bozkurt, P. M. Koenraad, A. D. Giddings, R. P. Campion, and B. L. Gallagher
Phys. Rev. B: Condens. Matter, Vol: 84, No: 10 , published: 16 September 2011
Localized interface states in coherent isovalent semiconductor heterojunctions
Voicu Popescu and Alex Zunger
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 16 September 2011
Valley degeneracy in biaxially strained aluminum arsenide quantum wells
S. Prabhu-Gaunkar, S. Birner, S. Dasgupta, C. Knaak, and M. Grayson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 16 September 2011
Magnetic field effects in few-level quantum dots: Theory and application to experiment
Christopher J. Wright, Martin R. Galpin, and David E. Logan
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 16 September 2011
Efficient terahertz emission from InAs nanowires
Denis V. Seletskiy, Michael P. Hasselbeck, Jeffrey G. Cederberg, Aaron Katzenmeyer, Maria E. Toimil-Molares, François Léonard, A. Alec Talin, and Mansoor Sheik-Bahae
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 16 September 2011
In situ tunable g factor for a single electron confined inside an InAs quantum dot molecule
W. Liu, S. Sanwlani, R. Hazbun, J. Kolodzey, A. S. Bracker, D. Gammon, and M. F. Doty
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 16 September 2011
Blinking in quantum dots: The origin of the grey state and power law statistics
Mao Ye and Peter C. Searson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 16 September 2011
Ultrafast dynamics of carrier multiplication in quantum dots
Franz Schulze, Mario Schoth, Ulrike Woggon, Andreas Knorr, and Carsten Weber
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 16 September 2011
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
Hyeon-Kyun Noh, K. J. Chang, Byungki Ryu, and Woo-Jin Lee
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 15 September 2011
Electrical transport in strained MgxZn1−xO:P thin films grown by pulsed laser deposition on ZnO(000-1)
Matthias Brandt,Michael Bonholzer,Marko St&ouml,Gabriele Benndorf,Daniel Spemann,Michael Lorenz,Marius Grundmann1
Phys. Status Solidi B, Vol: 249, No: 1 , published: 15 September 2011
Statistical model on the optical properties of silicon nanowire mats
Gerald Brönstrup, Frank Garwe, Andrea Csáki, Wolfgang Fritzsche, Andrea Steinbrück, and Silke Christiansen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 15 September 2011
First-principles study of electronic and structural properties of CuO
Burak Himmetoglu, Renata M. Wentzcovitch, and Matteo Cococcioni
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 14 September 2011
Electronic band structure of epitaxial CuInSe2 films
Andreas Hofmann and Christian Pettenkofer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 14 September 2011
H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry
K. M. Johansen, A. Zubiaga, F. Tuomisto, E. V. Monakhov, A. Yu. Kuznetsov, and B. G. Svensson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 14 September 2011
Quantum criticality in Ce2PdIn8: A thermoelectric study
Marcin Matusiak, Daniel Gnida, and Dariusz Kaczorowski
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 14 September 2011
30-GHz millimeter-wave carrier generation with single sideband modulation based on stimulated Brillouin scattering
Luo Zhen'ao, Xie Liang, Qi Xiaoqiong, Wang Hui
J. Semicond., Vol: 32, No: 9 , published: 14 September 2011
Two-channel Kondo physics in tunnel-coupled double quantum dots
Frederic W. Jayatilaka, Martin R. Galpin, and David E. Logan
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 14 September 2011
Electronic structure and transport properties of doped PbSe
Haowei Peng, Jung-Hwan Song, M. G. Kanatzidis, and Arthur J. Freeman
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 13 September 2011
Analytical and Numerical Calculations of Photoconductivity in Porous Silicon
Monastyrskii L.S., Sokolovskii B.S., Pavlyuk M.R.
Укр. фiз. ж., Vol: 56, No: 9 , published: 13 September 2011
Effect of Interface Defect States on Photoelectric Properties of InxGa1-xAs/GaAs Heterostructures with Quantum Dots
Vakulenko O.V., Golovynskyi S.L., Kondratenko S.V., Mazur Yu.I., Wang Zh.M., Salamo G.J.
Укр. фiз. ж., Vol: 56, No: 9 , published: 13 September 2011
Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction
Subhasish Mandal and Ranjit Pati
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 13 September 2011
Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
S. Schulz, M. A. Caro, E. P. O’Reilly, and O. Marquardt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 13 September 2011
Особенности и механизмы фотолюминесценции наноструктурированных пленок карбида кремния,выращиваемых на кремнии в вакууме
Орлов Л.К., Штейнман Э.А., Ивина Н.Л., Вдовин В.И.
Физ. тверд. тела, Vol: 53, No: 9 , published: 13 September 2011
Silicon p-MOS and n-MOS Transistors with Uniaxially Strained Channels in Electronic Device Nanotechnology
Gorin A.E., Gromova G.V., Ermakov V.M., Kogoutyuk P.P., Kolomoets V.V., Nasarchuk P.F., Panasjuk L.I., Fedosov S.A.
Укр. фiз. ж., Vol: 56, No: 9 , published: 13 September 2011
Electron-phonon coupling in bcc lithium
Timur Bazhirov, Jesse Noffsinger, and Marvin L. Cohen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 12 September 2011
Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
D. C. Look, K. D. Leedy, L. Vines, B. G. Svensson, A. Zubiaga, F. Tuomisto, D. R. Doutt, and L. J. Brillson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 12 September 2011
Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case
Audrius Alkauskas and Alfredo Pasquarello
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 12 September 2011
Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy
A. P. Wijnheijmer, J. K. Garleff, K. Teichmann, M. Wenderoth, S. Loth, and P. M. Koenraad
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 12 September 2011
Coexistence of super-Poissonian mechanisms in quantum dots with ferromagnetic leads
Rui-Qiang Wang, Li Sheng, Liang-Bin Hu, Baigeng Wang, and D. Y. Xing
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 12 September 2011
Absence of intrinsic spin splitting in one-dimensional quantum wires of tetrahedral semiconductors
Jun-Wei Luo, Lijun Zhang, and Alex Zunger
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 12 September 2011
Four-photon cascade from quadexcitons in a single GaAs quantum dot
Y. Arashida, Y. Ogawa, and F. Minami
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 12 September 2011
Hole-spin initialization and relaxation times in InAs/GaAs quantum dots
F. Fras, B. Eble, P. Desfonds, F. Bernardot, C. Testelin, M. Chamarro, A. Miard, and A. Lemaître
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 12 September 2011
Shape of metallic band at single-domain Au-adsorbed Ge(001) surface studied by angle-resolved photoemission spectroscopy
Kan Nakatsuji, Yuya Motomura, Ryota Niikura, and Fumio Komori
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 12 September 2011
Role of light and heavy embedded nanoparticles on the thermal conductivity of SiGe alloys
A. Kundu, N. Mingo, D. A. Broido, and D. A. Stewart
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 09 September 2011
Role of functionalized transition-metal coated W tips in STM imaging: Application to epitaxial graphene on SiC(0001)
S. H. Rhim, Y. Qi, G. F. Sun, Y. Liu, M. Weinert, and L. Li
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 09 September 2011
Transport in disordered two-dimensional topological insulators
G. M. Gusev, Z. D. Kvon, O. A. Shegai, N. N. Mikhailov, S. A. Dvoretsky, and J. C. Portal
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 09 September 2011
Excitonic Aharonov-Bohm effect: Unstrained versus strained type-I semiconductor nanorings
M. Tadić, N. Čukarić, V. Arsoski, and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 09 September 2011
Electronic structure of ZrSxSe2−x by Tran-Blaha modified Becke-Johnson density functional
A. Ghafari, A. Boochani, C. Janowitz, and R. Manzke
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 08 September 2011
Role of copper interstitials in CuInSe2: First-principles calculations
Johan Pohl, Andreas Klein, and Karsten Albe
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 08 September 2011
Spin orientation by electric current in (110) quantum wells
L. E. Golub and E. L. Ivchenko
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 08 September 2011
Ab initio computation of the energies of circular quantum dots
M. Pedersen Lohne, G. Hagen, M. Hjorth-Jensen, S. Kvaal, and F. Pederiva
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 08 September 2011
Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
A. Belabbes, L. C. de Carvalho, A. Schleife, and F. Bechstedt
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 07 September 2011
Quantum theory of the charge-stability diagram of semiconductor double-quantum-dot systems
Xin Wang, Shuo Yang, and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 07 September 2011
Slave-boson Keldysh field theory for the Kondo effect in quantum dots
Sergey Smirnov and Milena Grifoni
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 07 September 2011
Influence of the pulse shape and the dot size on the decay and reappearance of Rabi rotations in laser driven quantum dots
M. Glässl, M. D. Croitoru, A. Vagov, V. M. Axt, and T. Kuhn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 07 September 2011
Mixed Zn and O substitution of Co and Mn in ZnO
L. M. C. Pereira, U. Wahl, S. Decoster, J. G. Correia, L. M. Amorim, M. R. da Silva, J. P. Araújo, and A. Vantomme
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 06 September 2011
Visible-light photoconductivity of Zn1-xCoxO and its dependence on Co2+ concentration
Claire A. Johnson, Alicia Cohn, Tiffany Kaspar, Scott A. Chambers, G. Mackay Salley, and Daniel R. Gamelin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 06 September 2011
Nuclear spin polarization in single self-assembled In0.3Ga0.7As quantum dots by electrical spin injection
Pablo Asshoff, Gunter Wüst, Andreas Merz, Dimitri Litvinov, Dagmar Gerthsen, Heinz Kalt, and Michael Hetterich
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 06 September 2011
Електронний, зарядовий та магнітний стани точкових дефектів в монокристалах кремнію
І. В. Плющай, В. А. Макара, О. І. Плющай
Доп. Нац. АН Украïни, Vol: 2011, No: 9 , published: 05 September 2011
Group-VII point defects in ZnSe
L. S. dos Santos, W. G. Schmidt, and E. Rauls
Phys. Rev. B: Condens. Matter, Vol: 84, No: 11 , published: 02 September 2011
Phase of phonon-induced resistance oscillations in a high-mobility two-dimensional electron gas
A. T. Hatke, M. A. Zudov, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 02 September 2011
Charge control in InP/(Ga,In)P single quantum dots embedded in Schottky diodes
O. D. D. Couto, Jr., J. Puebla, E. A. Chekhovich, I. J. Luxmoore, C. J. Elliott, N. Babazadeh, M. S. Skolnick, A. I. Tartakovskii, and A. B. Krysa
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 01 September 2011
Giant and reversible enhancement of the electrical resistance of GaAs1−xNx by hydrogen irradiation
J. Alvarez, J.-P. Kleider, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, L. Mariucci, and S. Rubini
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 31 August 2011
The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure
C. Martínez-Orozco,M. E. Mora-Ramos, C. A. Duque
Phys. Status Solidi B, Vol: 249, No: 1 , published: 31 August 2011
Dual action of light in photodarkened Ge–As–S films
Darina Arsova,Elena Vateva
Phys. Status Solidi B, Vol: 249, No: 1 , published: 31 August 2011
First-principles study of the band structure and optical absorption of CuGaS2
Irene Aguilera, Julien Vidal, Perla Wahnón, Lucia Reining, and Silvana Botti
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 30 August 2011
Second-order piezoelectricity in wurtzite III-N semiconductors
Joydeep Pal, Geoffrey Tse, Vesel Haxha, Max A. Migliorato, and Stanko Tomić
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 30 August 2011
Nonlinear spin Hall effect in GaAs (110) quantum wells
V. I. Ivanov, V. K. Dugaev, E. Ya. Sherman, and J. Barnaś
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 30 August 2011
Optical polarization of localized hole spins in p-doped quantum wells
M. Studer, M. Hirmer, D. Schuh, W. Wegscheider, K. Ensslin, and G. Salis
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 30 August 2011
Identification of the VAl-ON defect complex in AlN single crystals
J.-M. Mäki, I. Makkonen, F. Tuomisto, A. Karjalainen, S. Suihkonen, J. Räisänen, T. Yu. Chemekova, and Yu. N. Makarov
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 29 August 2011
Quantitative determination of local potential values in inhomogeneously doped semiconductors by scanning tunneling microscopy
P. H. Weidlich, R. E. Dunin-Borkowski, and Ph. Ebert
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 29 August 2011
Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots
S. M. Huang, A. O. Badrutdinov, L. Serra, T. Kodera, T. Nakaoka, N. Kumagai, Y. Arakawa, D. A. Tayurskii, K. Kono, and K. Ono
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 29 August 2011
Thermal conductivity reduction in core-shell nanowires
Ming Hu, Xiaoliang Zhang, Konstantinos P. Giapis, and Dimos Poulikakos
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 29 August 2011
Легирование твердого раствора Bi1.9Sb0.1Te3 примесью Sn
Житинская М.К., Немов С.А., Мухтаров В.Р., Свечникова Т.Е.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Расчет электронной структуры вакансий и их компенсированных состояний в полупроводниках A IIIB VI
Мехрабова М.А., Мадатов Р.С.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Диэлектрические и транспортные свойства тонких пленок, осажденных из золей, содержащих наночастицы кремния
Кононов Н.Н., Дорофеев С.Г., Ищенко А.А., Миронов Р.А., Плотниченко В.Г., Дианов Е.М.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Дисперсия показателя преломления эпитаксиальных слоев твердого раствора Pb1-x Eux Te (0=<q x=<q 1) ниже края поглощения
Пашкеев Д.А., Селиванов Ю.Г., Чижевский Е.Г., Ставровский Д.А., Засавицкий И.И.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Исследование оптических параметров халькогенидной полупроводниковой системы Se-As, содержащей
примеси EuF3
Исаев А.И., Мехтиева С.И., Гарибова С.Н., Алекперов Р.И., Зейналов В.З.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Оптическое поглощение в сверхрешетках квантовых точек InAs/GaAs в электрическом поле при комнатной температуре
Соболев М.М., Гаджиев И.М., Бакшаев И.О., Неведомский В.Н., Буяло М.С., Задиранов Ю.М., Портной Е.Л.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Пьезоэффект в структурах с нитевидными нанокристаллами GaAs
Сошников И.П., Афанасьев Дм.Е., Петров В.А., Цырлин Г.Э., Буравлев А.Д., Самсоненко Ю.Б., Хребтов А., Танклевская Е.М., Селезнев И.А.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Фоточувствительные тонкопленочные барьеры Шоттки In/p-PbxSn1-xS: создание и свойства
Гременок В.Ф., Рудь В.Ю., Рудь Ю.В., Башкиров С.А., Иванов В.А.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Исследования подвижности в низкоразмерных системах в постоянном поперечном электрическом поле
Синявский Э.П., Карапетян С.А.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Формирование одиночных GaAs нитевидных нанокристаллов на вольфрамовом острие и исследование их электрических характеристик
Голубок А.О., Самсоненко Ю.Б., Мухин И.С., Буравлев А.Д., Цырлин Г.Э.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Фотолюминесценция в кремнии, имплантированном ионами эрбия при повышенной температуре
Соболев Н.А., Калядин А.Е., Шек И.Е., Сахаров В.И., Серенков И.Т., Вдовин В.И., Паршин Е.О., Маковийчук М.И.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Природа электрического взаимодействия контактов Шоттки
Торхов Н.А.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Исследование влияния сульфидной и ультрафиолетовой обработок поверхности n-i-GaAs на параметры омических контактов
Авдеев С.М., Ерофеев Е.В., Кагадей В.А.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Сверхвысокочастотный квазипотенциал и вихревые токи в p-n-переходе
Шамирзаев С.Х., Гулямов Г., Дадамирзаев М.Г., Гулямов А.Г.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Механизмы токопереноса в анизотипных гетеропереходах n-TiO2/p-CdTe
Брус В.В., Илащук М.И., Ковалюк З.Д., Марьянчук П.Д., Ульяницкий К.С., Грицюк Б.Н.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Dielectric response of doped organic semiconductor devices: P3HT:PCBM solar cells
Oskar Armbruster, Christoph Lungenschmied, and Siegfried Bauer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 26 August 2011
Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells
P. J. S. van Capel, D. Turchinovich, H. P. Porte, S. Lahmann, U. Rossow, A. Hangleiter, and J. I. Dijkhuis
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 26 August 2011
Polarized and resonant Raman spectroscopy on single InAs nanowires
M. Möller, M. M. de Lima, Jr., A. Cantarero, L. C. O. Dacal, J. R. Madureira, F. Iikawa, T. Chiaramonte, and M. A. Cotta
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 26 August 2011
Thermoelectric properties and investigations of low thermal conductivity in Ga-doped Cu2GeSe3
J. Y. Cho, X. Shi, J. R. Salvador, G. P. Meisner, J. Yang, H. Wang, A. A. Wereszczak, X. Zhou, and C. Uher
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 25 August 2011
A general approach to quantum dynamics using a variational master equation: Application to phonon-damped Rabi rotations in quantum dots
Dara P. S. McCutcheon, Nikesh S. Dattani, Erik M. Gauger, Brendon W. Lovett, and Ahsan Nazir
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 25 August 2011
Tunable exciton relaxation in vertically coupled semiconductor InAs quantum dots
Kushal C. Wijesundara, Juan E. Rolon, Sergio E. Ulloa, Allan S. Bracker, Daniel Gammon, and Eric A. Stinaff
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 25 August 2011
Ferromagnetic coupling in Mg-doped passivated AlN nanowires: A first-principles study
Zhen-Kun Tang,Ling-Ling Wang,Li-Ming Tang, Xiao-Fei Li,Wen-Zhi Xiao,Liang Xu,Li-Hua Zhao
Phys. Status Solidi B, Vol: 249, No: 1 , published: 25 August 2011
Coherent spin dynamics of donor bound electrons in GaAs
Carey Phelps, Shannon O’Leary, John Prineas, and Hailin Wang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 24 August 2011
Heat transport in silicon from first-principles calculations
Keivan Esfarjani, Gang Chen, and Harold T. Stokes
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 23 August 2011
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation
Neophytos Neophytou and Hans Kosina
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 23 August 2011
Магнитоплазменные колебания двумерной электронной системы со спин-орбитальным взаимодействием в латеральной сверхрешетке
Витлина Р.З., Магарилл Л.И., Чаплик А.В.
Ж. эксперим. и теор. физ., Vol: 140, No: 2 , published: 22 August 2011
Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
Zhitao Chen, Kazuhisa Fujita, Junki Ichikawa, Yusuke Sakai, Takashi Egawa
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
К кинетике полярона в методе сокращенного описания Боголюбова
С. А. Соколовский
Теор. и мат. физ., Vol: 168, No: 2 , published: 22 August 2011
Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations
R. G. Mani, A. N. Ramanayaka, and W. Wegscheider
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 22 August 2011
Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis
Yujin Takemoto, Minoru Oshima, Kenji Yoshino, Kouji Toyota, Koichiro Inaba, Ken-ichi Haga, Koichi Tokudome
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces
Hirofumi Shimizu, Yuji Sanada
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Improvement of Electron Mobility above 100,000 cm2 V−1 s−1 in MgxZn1-xO/ZnO Heterostructures
Shunsuke Akasaka, Atsushi Tsukazaki, Ken Nakahara, Akira Ohtomo, Masashi Kawasaki
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Спектральные свойства волн в сверхрешетках с двух- и трехмерными неоднородностями
Игнатченко В.А., Цикалов Д.С
Ж. эксперим. и теор. физ., Vol: 140, No: 2 , published: 22 August 2011
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
Tom J. Badcock, Rui Hao, Michelle A. Moram, Menno J. Kappers, Phil Dawson, Colin J. Humphreys
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells
Yasutaka Higa, Mikio Sorimachi, Takuya Nishinome, Tomoyuki Miyamoto
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Phonon mediated off-resonant quantum dot–cavity coupling under resonant excitation of the quantum dot
Arka Majumdar, Erik D. Kim, Yiyang Gong, Michal Bajcsy, and Jelena Vučković
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 22 August 2011
Probing of single quantum dot dressed states via an off-resonant cavity
Arka Majumdar, Alexander Papageorge, Erik D. Kim, Michal Bajcsy, Hyochul Kim, Pierre Petroff, and Jelena Vučković
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 22 August 2011
Ground State Instability in Spin Polarization for Electrons Confined in Two-Dimensional Square Quantum Dots
Yhuki Negishi, Masamu Ishizuki, Takuma Okunishi,  Kyozaburo Takeda
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Исследование фото- и катодолюминесценции пленок ZnO
А. Н. Грузинцев, В. Т. Волков, Е. Е. Якимов, Е. Б. Якимов
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 8 , published: 22 August 2011
Сравнительный анализ спектров поглощения и излучения порошков оксида цинка
М. М. Михайлов, В. В. Нещименко, Чундун Ли
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 8 , published: 22 August 2011
Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
Ryo Osabe, Tadashi Okumura, Simon Kondo, Nobuhiko Nishiyama, Shigehisa Arai
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode
Safumi Suzuki, Koichi Karashima, Kaname Ishigaki, Masahiro Asada
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Dual Metal/High-k Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness
Yoshiaki Kikuchi, Hitoshi Wakabayashi, Masanori Tsukamoto, Naoki Nagashima
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
Spectroscopic study of β-SiC prepared via PLD at 1064 nm
G. Monaco, D. Garoli, M. Natali, F. Romanato and P. Nicolosi
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
The second-generation of CdTe and CuInGaSe2 thin film PV modules
A. Bosio, A. Romeo, D. Menossi, S. Mazzamuto and N. Romeo
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
Epitaxial growth and electrical characterization of germanium
M. Bosi, G. Attolini, C. Ferrari, C. Frigeri, M. Calicchio, E. Gombia, T. Asar, E. Boyali, U. Aydemir, S. Ozcelik and M. Kasap
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications
M. Baldini, C. Ghezzi, A. Parisini, L. Tarricone, S. Vantaggio, E. Gombia, A. Motta and A. Gasparotto
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si hetero-substrates by metalorganic vapour phase epitaxy
I. Miccoli, P. Prete, F. Marzo, D. Cannoletta and N. Lovergine
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
MBE growth and properties of low-density InAs/GaAs quantum dot structures
G. Trevisi, L. Seravalli, P. Frigeri, C. Bocchi, V. Grillo, L. Nasi, I. Suárez, D. Rivas, G. Muñoz-Matutano and J. Martínez-Pastor
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
Study on p-type HgCdTe Single Crystals by Mobility Spectrum Analysis
ZHNAG Ke-Feng, LIN Tie,  WANG Ni-Li,  WANG Reng,   LIN Xing-Chao,  ZHANG Li-Ping,  LI Xiang-Yang
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 30, No: 4 , published: 20 August 2011
PbTe photovoltaic mid-IR detectors
WEI Xiao-Dong, CAI Chun-Feng, ZHANG Bing-Po, HU Lian, et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 30, No: 4 , published: 20 August 2011
AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier
LIU Guo-Guo, WEI Ke, HUANG Jun, LIU Xin-Yu, NIU Jie-Bin
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 30, No: 4 , published: 20 August 2011
Excitonic effects in the optical properties of a SiC sheet and nanotubes
H. C. Hsueh, G. Y. Guo, and Steven G. Louie
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 19 August 2011
Stimulated parametric polariton-polariton scattering in GaAs microcavities with a shallow polariton band under resonant excitation of exciton mode
A. A. Demenev, S. S. Gavrilov, and V. D. Kulakovskii
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 19 August 2011
Long-lived electron spin coherence in CdSe/Zn(S,Se) self-assembled quantum dots
M. Syperek, D. R. Yakovlev, I. A. Yugova, J. Misiewicz, I. V. Sedova, S. V. Sorokin, A. A. Toropov, S. V. Ivanov, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 19 August 2011
g-factor anisotropy of hole quantum wires induced by Rashba interaction
M. Magdalena Gelabert and Llorenç Serra
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 18 August 2011
Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
A. Riefer, F. Fuchs, C. Rödl, A. Schleife, F. Bechstedt, and R. Goldhahn
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 17 August 2011
Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas
X. Y. Peng, Q. Zhang, B. Shen, J. R. Shi, C. M. Yin, X. W. He, F. J. Xu, X. Q. Wang, N. Tang, C. Y. Jiang, Y. H. Chen, and K. Chang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 17 August 2011
Interaction correction to conductivity of AlxGa1−xAs/GaAs double quantum well heterostructures near the balance
G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov, A. K. Bakarov, and D. V. Dmitriev
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 17 August 2011
Disordered electron liquid in double quantum well heterostructures: Renormalization group analysis and dephasing rate
I. S. Burmistrov, I. V. Gornyi, and K. S. Tikhonov
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 17 August 2011
Nuclear spin dynamics in double quantum dots: Fixed points, transients, and intermittency
M. S. Rudner, F. H. L. Koppens, J. A. Folk, L. M. K. Vandersypen, and L. S. Levitov
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 17 August 2011
Структурные, упругие и электронные свойства икосаэдрических субкарбидов (B12C3, B13C2), субнитрида (B12N2) и субоксида бора (B12O2) по данным SCC--DFTB-расчетов
Еняшин А.Н., Ивановский А.Л.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Влияние дисперсии и затухания состояний тепловых фононов на поглощение продольного ультразвука в кристаллах Ge
Кулеев И.Г., Кулеев И.И., Бахарев С.М.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well
Yuan Lihua, Wang Daobin, Chen Yuhong, Zhang Cairong, Pu Zhongsheng and Zhang Haimin
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Temperature Dependence of Effective Mass of Weak-Coupling Polaron in a Quantum Rod
Eerdunchaolu,  Wuyunqimuge,  Han Chao
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 8 , published: 16 August 2011
Гигантская диэлектрическая релаксация в кристаллах TlGaTe2
Сардарлы Р.М., Самедов О.А., Абдуллаев А.П., Салманов Ф.Т.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal—semiconductor—metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes
Chen Bin, Yang Yintang, Chai Changchun, Song Kun and Ma Zhenyang
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Simulation of electrical properties of InxAl1—xN/AlN/GaN high electron mobility transistor structure
Bi Yang, Wang Xiaoliang, Xiao Hongling, Wang Cuimei, Yang Cuibai, Peng Enchao, Lin Defeng, Feng Chun and Jiang Lijuan
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Transient and finite-size effects in transport properties of a quantum wire
Mariano Salvay, Aníbal Iucci, and Carlos Naón
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 16 August 2011
Проявление резонанса по рассеянному свету в стоксовых и антистоксовых спектрах квантовых проволок ZnTe и ZnMgTe
Мельник Н.Н., Заварицкая Т.Н., Кучеренко И.В., Janik E., Wojtowicz T., Пляшечник О.С.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Linear and nonlinear transport in a small charge-tunable open quantum ring
F. G. G. Hernandez, G. M. Gusev, Z. D. Kvon, and J. C. Portal
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 16 August 2011
Электрон-фононное рассеяние и проводимость квантового цилиндра в магнитном поле
Эминов П.А., Ульдин А.А., Сезонов Ю.И.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Эффект компенсации в нелегированном поликристаллическом CdTe, синтезированном в неравновесных условиях
Багаев В.С., Клевков Ю.В., Колосов С.А., Кривобок В.С., Шепель А.А.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Влияние дисперсии и затухания состояний тепловых фононов на поглощение продольного ультразвука в кристаллах Ge
Кулеев И.Г., Кулеев И.И., Бахарев С.М.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
Zhu Yan, Li Mifeng, He Jifang, Yu Ying, Ni Haiqiao, Xu Yingqiang, Wang Juan, He Zhenhong  and Niu Zhichuan
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Periodic Nanoripples and Photoluminescence on ZnO:Al Film Induced by Femtosecond Laser Pulses
Zhou Kan,  Feng Donghai, Li Xia,  Jia Tianqing,  Liu Jiansheng,  Xu Zhizhan
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 8 , published: 16 August 2011
Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature
Chen Deyuan
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Gate-enclosed NMOS transistors
Fan Xue, Li Ping, Li Wei, Zhang Bin, Xie Xiaodong, Wang Gang, Hu Bin and Zhai Yahong
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs
Lü Weifeng and Sun Lingling
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Structural diversity and electronic properties of Cu2SnX3 (X=S, Se): A first-principles investigation
Ying-Teng Zhai, Shiyou Chen, Ji-Hui Yang, Hong-Jun Xiang, Xin-Gao Gong, Aron Walsh, Joongoo Kang, and Su-Huai Wei
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Properties of amorphous GaN from first-principles simulations
B. Cai and D. A. Drabold
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Semiconductor-to-metal transition in WO3−x: Nature of the oxygen vacancy
Fenggong Wang, Cristiana Di Valentin, and Gianfranco Pacchioni
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Auger recombination in Si and GaAs semiconductors: Ab initio results
Marco Govoni, Ivan Marri, and Stefano Ossicini
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions
Yann-Michel Niquet and Christophe Delerue
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Stepped discontinuity in a quantum well as a spin flipper
A. Dargys
Phys. Status Solidi B, Vol: 249, No: 1 , published: 15 August 2011
Analytical solution of the quantum-state tomography of the biexciton cascade in semiconductor quantum dots: Pure dephasing does not affect entanglement
Alexander Carmele and Andreas Knorr
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
Michael A. Reshchikov, Alexander A. Kvasov, Marilyn F. Bishop, Tom McMullen, Alexander Usikov, Vitali Soukhoveev, and Vladimir A. Dmitriev
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Effect of Oxygen Gas Pressure on Electrical, Optical, and Structural Properties of Al-Doped ZnO Thin Films Fabricated by Pulsed Laser Deposition for Use as Transparent Electrodes in All-Solid-State Electrochromic Devices
Tamiko Ohshima, Yuuki Murakami, Hiroharu Kawasaki, Yoshiaki Suda, and Yoshihito Yagyu
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 8S1 , published: 14 August 2011
Spin-Polarized Tunneling between Optically Pumped GaAs(110) Surface and Spin-Polarized Tip
Nobuyuki Ishida and Kazuhisa Sueoka
Jpn. J. Appl. Phys., Part 4 , Vol: 50, No: 8S3 , published: 14 August 2011
Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy
Shinsuke Hara, Kazuhiro Fuse, Ryuto Machida, Kazuki Yagishita, Katsumi Irokawa, Hirofumi Miki, Akira Kawazu, and Hiroki I. Fujishiro
Jpn. J. Appl. Phys., Part 4 , Vol: 50, No: 8S3 , published: 14 August 2011
In situ Observation of Surface Reconstruction of Si(001) with Stress/Strain Field Scanning Probe Microscopy
Hongxuan Guo and Daisuke Fujita
Jpn. J. Appl. Phys., Part 4 , Vol: 50, No: 8S3 , published: 14 August 2011
Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films
Masahiko Takahashi, Yoshiaki Nakamura, Jun Kikkawa, Osamu Nakatsuka, Shigeaki Zaima, and Akira Sakai
Jpn. J. Appl. Phys., Part 4 , Vol: 50, No: 8S3 , published: 14 August 2011
Broadly tunable 1250 nm quantum dot-based semiconductor disk laser
M. Butkus, C.J. Hamilton, J. Rautiainen,O.G. Okhotnikov, S.S. Mikhrin, I.L. Krestnikov, and E.U. Rafailov
IET Optoelectron, Vol: 5, No: 4 , published: 14 August 2011
Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies
Kentaro Watanabe, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, and Masakazu Ichikawa
Jpn. J. Appl. Phys., Part 4 , Vol: 50, No: 8S3 , published: 14 August 2011
Excitons at the (001) surface of anatase: Spatial behavior and optical signatures
Giacomo Giorgi, Maurizia Palummo, Letizia Chiodo, and Koichi Yamashita
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Физико-химические аспекты формирования квантовых точек в системе InAs/GaAs капельным методом в условиях МОС-гидридной эпитаксии
Акчурин Р.Х., Богинская И.А., Вагапова Н.Т. и др.
Письма в ЖТФ, Vol: 36, No: 15 , published: 12 August 2011
Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodic wires
A. A. Minkevich, E. Fohtung, T. Slobodskyy, M. Riotte, D. Grigoriev, M. Schmidbauer, A. C. Irvine, V. Novák, V. Holý, and T. Baumbach
Phys. Rev. B: Condens. Matter, Vol: 84, No: 5 , published: 12 August 2011
Fluctuation theorem for a double quantum dot coupled to a point-contact electrometer
D. S. Golubev, Y. Utsumi, M. Marthaler, and Gerd Schön
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Modulated Rashba interaction in a quantum wire: Spin and charge dynamics
Mariana Malard, Inna Grusha, G. I. Japaridze, and Henrik Johannesson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Two-photon photoluminescence excitation spectroscopy of single quantum dots
Y. Benny, Y. Kodriano, E. Poem, S. Khatsevitch, D. Gershoni, and P. M. Petroff
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Методика определения радиационных дефектов и прогноза радиационной стойкости МОП-транзисторов
Левин М.Н., Бондаренко Е.В., Бормонтов А.Е. и др.
Письма в ЖТФ, Vol: 36, No: 15 , published: 12 August 2011
Isolated high-order harmonics pulse from two-color-driven Bloch oscillations in bulk semiconductors
Oliver D. Mücke
Phys. Rev. B: Condens. Matter, Vol: 84, No: 8 , published: 11 August 2011
Анализ квантовых и волноводных свойств многослойных наноструктур и микроструктур
А. А. Майер
Докл. АН(Россия), Vol: 439, No: 6 , published: 11 August 2011
Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators
Yu-ichiro Matsushita, Kazuma Nakamura, and Atsushi Oshiyama
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 10 August 2011
Quantum control of electron spins in the two-dimensional electron gas of a CdTe quantum well with a pair of Raman-resonant phase-locked laser pulses
Timothy M. Sweeney, Carey Phelps, and Hailin Wang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 10 August 2011
Calculation of the diameter-dependent polytypism in GaAs nanowires from an atomic motif expansion of the formation energy
Volker Pankoke, Peter Kratzer, and Sung Sakong
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 10 August 2011
Hole-mediated ferromagnetism in coupled semimagnetic quantum dots
L. Villegas-Lelovsky, Fanyao Qu, L. O. Massa, V. Lopez-Richard, and G. E. Marques
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 10 August 2011
Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations
Yu. Naseka,O. Strilchuk,V. Komar,I. Terzin,S. Sulima,K. Bryleva
Phys. Status Solidi B, Vol: 249, No: 1 , published: 10 August 2011
Comparative study of structural and electronic properties of Cu-based multinary semiconductors
Yubo Zhang, Xun Yuan, Xiudong Sun, Bi-Ching Shih, Peihong Zhang, and Wenqing Zhang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 09 August 2011
Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN
Nate Miller, Eugene E. Haller, Gregor Koblmüller, Chad Gallinat, James S. Speck, William J. Schaff, Michael E. Hawkridge, Kin Man Yu, and Joel W. Ager, III
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 09 August 2011
Crystallization of an exciton superfluid
J. Böning, A. Filinov, and M. Bonitz
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 09 August 2011
Microscopic modeling of magnetic-field effects on charge transport in organic semiconductors
A. J. Schellekens, W. Wagemans, S. P. Kersten, P. A. Bobbert, and B. Koopmans
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 09 August 2011
Microwave-induced resistance oscillations and zero-resistance states in two-dimensional electron systems with two occupied subbands
J. Iñarrea and G. Platero
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 09 August 2011
Density of states anomalies in multichannel quantum wires
Hideo Yoshioka and Hiroyuki Shima
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 09 August 2011
Thermoelectric properties of p-type CuInSe2 chalcopyrites enhanced by introduction of manganese
Jinlei Yao, Nathan J. Takas, Megan L. Schliefert, David S. Paprocki, Peter E. R. Blanchard, Huiyang Gou, Arthur Mar, Christopher L. Exstrom, Scott A. Darveau, Pierre F. P. Poudeu, and Jennifer A. Aitken
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 08 August 2011
Time-resolved high-temperature detection with single charge resolution of holes tunneling into many-particle quantum dot states
T. Nowozin, A. Marent, G. Hönig, A. Schliwa, D. Bimberg, A. Beckel, B. Marquardt, A. Lorke, and M. Geller
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 05 August 2011
Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
S. P. Dash, S. Sharma, J. C. Le Breton, J. Peiro, H. Jaffrès, J.-M. George, A. Lemaître, and R. Jansen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 5 , published: 04 August 2011
Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy
Mahesh Kumar, Mohana K. Rajpalke,Basanta Roul, Thirumaleshwara N. Bhat,A. T. Kalghatgi,S. B. Krupanidhi1
Phys. Status Solidi B, Vol: 249, No: 1 , published: 03 August 2011
Strain tuning of quantum dot optical transitions via laser-induced surface defects
Cristian Bonato, Evert van Nieuwenburg, Jan Gudat, Susanna Thon, Hyochul Kim, Martin P. van Exter, and Dirk Bouwmeester
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 03 August 2011
Interplay of charge and spin in quantum dots: The Ising case
Boaz Nissan-Cohen, Yuval Gefen, M. N. Kiselev, and Igor V. Lerner
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 03 August 2011
Influence of interference effects on thermoelectric properties of double quantum dots
M. Wierzbicki and R. Swirkowicz
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 03 August 2011
Spin-orbit Hanle effect in high-mobility quantum wells
A. V. Poshakinskiy and S. A. Tarasenko
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 03 August 2011
Impurity complexes and conductivity of Ga-doped ZnO
D. O. Demchenko, B. Earles, H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 01 August 2011
Surface roughness and thermal conductivity of semiconductor nanowires: Going below the Casimir limit
J. Carrete, L. J. Gallego, L. M. Varela, and N. Mingo
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 01 August 2011
Visible-light absorption and large band-gap bowing of GaN1−xSbx from first principles
R. Michael Sheetz, Ernst Richter, Antonis N. Andriotis, Sergey Lisenkov, Chandrashekhar Pendyala, Mahendra K. Sunkara, and Madhu Menon
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 01 August 2011
Measurement of the separation dependence of resonant energy transfer between CdSe/ZnS core/shell nanocrystallite quantum dots
Farbod Shafiei, Sannah P. Ziama, Eric D. Curtis, and Ricardo S. Decca
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 01 August 2011
Chiral spin currents and spectroscopically accessible single merons in quantum dots
Catherine J. Stevenson and Jordan Kyriakidis
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 01 August 2011
Excitons and excitonic fine structures in Si nanowires: Prediction of an electronic state crossover with diameter changes
Lijun Zhang, Jun-Wei Luo, Alberto Franceschetti, and Alex Zunger
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 01 August 2011
Influence of s,p-d and s-p exchange couplings on exciton splitting in Zn1−xMnxO
W. Pacuski, J. Suffczyński, P. Osewski, P. Kossacki, A. Golnik, J. A. Gaj, C. Deparis, C. Morhain, E. Chikoidze, Y. Dumont, D. Ferrand, J. Cibert, and T. Dietl
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Bound states of the Fe impurity in wurtzite GaN from hybrid density-functional calculations
Paola Alippi, F. Filippone, G. Mattioli, A. Amore Bonapasta, and Vincenzo Fiorentini
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Hydrogen impurities and shallow donors in SnO2 studied by infrared spectroscopy
Figen Bekisli, Michael Stavola, W. Beall Fowler, Lynn Boatner, Erik Spahr, and Gunter Lüpke
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Intrinsic stoichiometry and oxygen-induced p-type conductivity of pyrite FeS2
Ruoshi Sun, M. K. Y. Chan, ShinYoung Kang (강신영), and G. Ceder
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Nernst effect beyond the relaxation-time approximation
D. I. Pikulin, Chang-Yu Hou, and C. W. J. Beenakker
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Effect of symmetry breaking on the optical absorption of semiconductor nanoparticles
Adam Gali, Efthimios Kaxiras, Gergely T. Zimanyi, and Sheng Meng
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Quantum-kinetic theory of photocurrent generation via direct and phonon-mediated optical transitions
U. Aeberhard
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells
J. Danhof, U. T. Schwarz, A. Kaneta, and Y. Kawakami
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Helical antiferromagnetic ordering in the lowest Landau level of a semiconductor superlattice
Liqiu Zheng and D. C. Marinescu
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Tunable crossovers for the quantum interference correction to conductance and shot-noise power in chaotic quantum dots with nonideal contacts
J. G. G. S. Ramos, A. L. R. Barbosa, and A. M. S. Macêdo
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 29 July 2011
Nonequilibrium transport through quantum dots with Dzyaloshinsky-Moriya-Kondo interaction
Mikhail Pletyukhov and Dirk Schuricht
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 29 July 2011
Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films
J. P. Leitão, N. M. Santos, P. A. Fernandes, P. M. P. Salomé, A. F. da Cunha, J. C. González, G. M. Ribeiro, and F. M. Matinaga
Phys. Rev. B: Condens. Matter, Vol: 84, No: 2 , published: 29 July 2011
Ultrafast screening and carrier dynamics in ZnO: Theory and experiment
Marijn A. M. Versteegh, Tim Kuis, H. T. C. Stoof, and Jaap I. Dijkhuis
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 28 July 2011
Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions
G. Tkachov and E. M. Hankiewicz
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 28 July 2011
Lasing and transport in a quantum-dot resonator circuit
Pei-Qing Jin, Michael Marthaler, Jared H. Cole, Alexander Shnirman, and Gerd Schön
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 28 July 2011
Influence of magnetic anisotropy on the Kondo effect and spin-polarized transport through magnetic molecules, adatoms, and quantum dots
Maciej Misiorny, Ireneusz Weymann, and Józef Barnaś
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 28 July 2011
Variational discrete variable representation for excitons on a lattice
A. Alvermann, P. B. Littlewood, and H. Fehske
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 27 July 2011
Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure
Toshiyuki Yoshida and Tamotsu Hashizume
Jpn. J. Appl. Phys., Vol: 50, No: 7R , published: 27 July 2011
Controlling thermal conductance through quantum dot roughening at interfaces
Patrick E. Hopkins, John C. Duda, Christopher W. Petz, and Jerrold A. Floro
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 27 July 2011
Electronic properties of quantum dots formed by magnetic double barriers in quantum wires
Hengyi Xu, T. Heinzel, and I. V. Zozoulenko
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 27 July 2011
Charge control in laterally coupled double quantum dots
G. Muñoz-Matutano, M. Royo, J. I. Climente, J. Canet-Ferrer, D. Fuster, P. Alonso-González, I. Fernández-Martínez, J. Martínez-Pastor, Y. González, L. González, F. Briones, and B. Alén
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 27 July 2011
Ambient Dependence of Photoluminescence for ZnO Nanocrystalline Films Synthesized in a Sonochemical Method
Dong Jae Lee, Jong Hyurk Park, Kee Joo Yee, and Yun Sang Lee
Jpn. J. Appl. Phys., Vol: 50, No: 7R , published: 27 July 2011
Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Guanghui Mei, Guangxi Hu, Shuyan Hu, Jinglun Gu, Ran Liu, and Tingao Tang
Jpn. J. Appl. Phys., Vol: 50, No: 7R , published: 27 July 2011
Band structure parameters of wurtzite and zinc-blende GaAs under strain in the GW approximation
Tawinan Cheiwchanchamnangij and Walter R. L. Lambrecht
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Theoretical analysis of the crystal structure, band-gap energy, polarization, and piezoelectric properties of ZnO-BeO solid solutions
L. Dong and S. P. Alpay
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
M. R. Wagner, G. Callsen, J. S. Reparaz, J.-H. Schulze, R. Kirste, M. Cobet, I. A. Ostapenko, S. Rodt, C. Nenstiel, M. Kaiser, A. Hoffmann, A. V. Rodina, M. R. Phillips, S. Lautenschläger, S. Eisermann, and B. K. Meyer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Variational quantum Monte Carlo study of charged excitons in fractional dimensional space
Troels F. Rønnow, Thomas G. Pedersen, Bart Partoens, and Kasper K. Berthelsen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Anisotropic splitting and spin polarization of metallic bands due to spin-orbit interaction at the Ge(111)(3×√3)R30-Au surface
Kan Nakatsuji, Ryota Niikura, Yuki Shibata, Masamichi Yamada, Takushi Iimori, Fumio Komori, Yasuhiro Oda, and Akira Ishii
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Identification of the main contributions to the conductivity of epitaxial InN
T. A. Komissarova, V. N. Jmerik, S. V. Ivanov, O. Drachenko, X. Wang, and A. Yoshikawa
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping
T. M. Gibbons, By. Kang, S. K. Estreicher, and C. Carbogno
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Optical bistability and hysteresis of a hybrid metal-semiconductor nanodimer
A. V. Malyshev and V. A. Malyshev
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 26 July 2011
Electronic structure of Cu2ZnSnS4 probed by soft x-ray emission and absorption spectroscopy
M. Bär, B.-A. Schubert, B. Marsen, S. Schorr, R. G. Wilks, L. Weinhardt, S. Pookpanratana, M. Blum, S. Krause, Y. Zhang, W. Yang, T. Unold, C. Heske, and H.-W. Schock
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 25 July 2011
Effect of the cluster magnetization on the magnetotransport at low temperatures in ordered arrays of MnAs nanoclusters on (111)B GaAs
M. T. Elm, P. J. Klar, S. Ito, S. Hara, and H.-A. Krug von Nidda
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 25 July 2011
Coherent interactions between phonons and exciton or exciton-polariton condensates
D. V. Vishnevsky, D. D. Solnyshkov, G. Malpuech, N. A. Gippius, and I. A. Shelykh
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 25 July 2011
Insulating phase of a two-dimensional electron gas in MgxZn1−xO/ZnO heterostructures below ν=1/3
Y. Kozuka, A. Tsukazaki, D. Maryenko, J. Falson, S. Akasaka, K. Nakahara, S. Nakamura, S. Awaji, K. Ueno, and M. Kawasaki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 25 July 2011
Coupled evolution of composition and morphology in a faceted three-dimensional quantum dot
G. Vastola, V. B. Shenoy, J. Guo, and Y.-W. Zhang
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 25 July 2011
Anisotropic size effect in strength in coherent nanowires with tilted twins
Yujie Wei
Phys. Rev. B: Condens. Matter, Vol: 84, No: 1 , published: 22 July 2011
High-frequency thermoelectric response in correlated electronic systems
Wenhu Xu, Cédric Weber, and Gabriel Kotliar
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 21 July 2011
Effects of electron coupling to intramolecular and intermolecular vibrational modes on the transport properties of single-crystal organic semiconductors
C. A. Perroni, V. Marigliano Ramaglia, and V. Cataudella
Phys. Rev. B: Condens. Matter, Vol: 84, No: 1 , published: 21 July 2011
Imaging of magnetoplasmons excited in a two-dimensional electron gas
I. Baskin, B. M. Ashkinadze, E. Cohen, and L. N. Pfeiffer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 20 July 2011
Resonant nuclear spin pumping in (In,Ga)As quantum dots
R. V. Cherbunin, K. Flisinski, I. Ya. Gerlovin, I. V. Ignatiev, M. S. Kuznetsova, M. Yu. Petrov, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 19 July 2011
Generation of entangled-photon pairs from biexcitons in CuCl thin films: Nano-to-bulk crossover regime
Motoaki Bamba and Hajime Ishihara
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 18 July 2011
Reciprocal carrier collection in organic photovoltaics
C. Kyle Renshaw, Cody W. Schlenker, Mark E. Thompson, and Stephen R. Forrest
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 18 July 2011
Electron spin relaxation in a single InAs quantum dot measured by tunable nuclear spins
X. M. Dou, B. Q. Sun, D. S. Jiang, H. Q. Ni, and Z. C. Niu
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 18 July 2011
Subnanosecond spectral diffusion of a single quantum dot in a nanowire
G. Sallen, A. Tribu, T. Aichele, R. André, L. Besombes, C. Bougerol, M. Richard, S. Tatarenko, K. Kheng, and J.-Ph. Poizat
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 18 July 2011
Bend-Imitating Theory and Electron Scattering in Sharply-bent Quantum Nanowires
Vakhnenko O.O.
Укр. фiз. ж., Vol: 56, No: 7 , published: 18 July 2011
Influence of precursor concentration on structural, morphological and electrical properties of spray deposited ZnO thin films
D. Sivalingam, J. B. Gopalakrishnan and J. B. Balaguru Rayappan
Cryst. Res. Technol., Vol: 46, No: 7 , published: 17 July 2011
The effect of ZnO buffer layer on structural and optical properties of ZnO nanorods
Jihui Lang, Xue Li, Jinghai Yang, Qiang Han, Yongsheng Yan, Ming Gao, Dan Wang, Lili Yang, Xiaoyan Liu, Rui Wang and Suyang Yang
Cryst. Res. Technol., Vol: 46, No: 7 , published: 17 July 2011
Effect of Cr doping on the structural and optical properties of ZnS nanoparticles
D. Amaranatha Reddy, G. Murali, R. P. Vijayalakshmi, B. K. Reddy and B. Sreedhar
Cryst. Res. Technol., Vol: 46, No: 7 , published: 17 July 2011
Thermodynamic stability, stoichiometry, and electronic structure of bcc-In2O3 surfaces
Peter Agoston and Karsten Albe
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 15 July 2011
Excitation of plasmons in a two-dimensional electron gas with defects by microwaves: Wake-field method
Eduard Takhtamirov and Roderick V. N. Melnik
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 15 July 2011
Spin-polarized multiexcitons in quantum dots in the presence of spin-orbit interaction
A. H. Russ, L. Schweidenback, M. Yasar, C. H. Li, A. T. Hanbicki, M. Korkusinski, G. Kioseoglou, B. T. Jonker, and A. Petrou
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 15 July 2011
Ab initio calculation of electron-phonon scattering time in germanium
V. G. Tyuterev, S. V. Obukhov, N. Vast, and J. Sjakste
Phys. Rev. B: Condens. Matter, Vol: 84, No: 3 , published: 15 July 2011
Surface plasmons in a metal nanowire coupled to colloidal quantum dots: Scattering properties and quantum entanglement
Guang-Yin Chen, Neill Lambert, Chung-Hsien Chou, Yueh-Nan Chen, and Franco Nori
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 13 July 2011
Тонкая структура и магнетизм кубического оксидного соединения Ni0.3Zn0.7O
Дубинин С.Ф., Максимов В.И., Пархоменко В.Д., Соколов В.И., Баранов А.Н., Соколов П.С., Дорофеев Ю.А.
Физ. тверд. тела, Vol: 53, No: 7 , published: 11 July 2011
Increase of the chemical potential and phase transitions in four-component exciton condensates subject to magnetic fields
Yuri G. Rubo and A. V. Kavokin
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 11 July 2011
Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
Madhu Thalakulam, C. B. Simmons, B. J. Van Bael, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, and M. A. Eriksson
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 11 July 2011
Effect of current on the microstructure and performance of (Bi2Te3)0.2(Sb2Te3)0.8 thermoelectric material via field activated and pressure assisted sintering
Chen Ruixue , Meng Qingsen, Fan Wenhao  and Wang Zhong
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell
Khasan Sanginovich Karimov, Muhammad Tariq Saeed, Fazal Ahmad Khalid and Zioda Mirzoevna Karieva
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
Absorption and emission spectra of molecular excitons in single perylene nanocrystals
Heisuke Ishino, Shigeto Iwai, Shunji Iwamoto, Tsuneo Okumura, Tomokazu Nishimoto, Selvakumar V. Nair, Takayoshi Kobayashi, and Eiji Tokunaga
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 08 July 2011
Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models
Song Kun, Chai Changchun, Yang Yintang, Jia Hujun, Zhang Xianjun  and Chen Bin
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement
Chen Wensuo, Zhang Bo, Fang Jian and Li Zhaoji
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET
Ashwani K. Rana, Narottam Chand and Vinod Kapoor
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFET
Li Cong, Zhuang Yiqi  and Han Ru
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime
He Hongyu  and Zheng Xueren
J. Semicond., Vol: 32, No: 7 , published: 08 July 2011
Влияние локализации в квантовых ямах и квантовых проволоках на смешивание тяжелых и легких дырок и на энергию связи акцептора
М.А.Семина , Р.А.Сурис
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Нестационарная спектроскопия alpha-центров Рывкина
А.П.Одринский
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Глубокие электронные состояния в нелегированном поликристаллическом CdTe, отожженном в жидком кадмии
Е.А.Боброва , Ю.В.Клевков
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Продольная электропроводность слоистых зарядово-упорядоченных кристаллов в сильном квантующем магнитном поле
П.В.Горский
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Термоэлектрические свойства BiTeI с BiI3, CuI и сверхстехиометрическим Bi
В.А.Кульбачинский, В.Г.Кытин, З.В.Лаврухина, А.Н.Кузнецов, А.В.Маркелов , А.В.Шевельков
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Correlation between Resistance Switching States and Photoluminescence Emission in ZnO Films
Vadim Sh. Yalishev, Shavkat U. Yuldashev, Yeon Soo Kim, Bae Ho Park
Appl. Phys. Express, Vol: 4, No: 7 , published: 07 July 2011
Четверные твердые растворы (FeIn2S4)x(MnIn2S4)1-x и фоточувствительные структуры на их основе
И.В.Боднарь, В.Ю.Рудь, Ю.В.Рудь, Д.В.Ложкин
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Зависимость проводимости освещенного неидеального гетероперехода от внешнего смещения
В.А.Борщак, В.А.Смынтына, Е.В.Бритавский , А.П.Балабан, Н.П.Затовская
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Фотопроводимость многослойных структур Si/Ge с квантовыми точками Ge, псевдоморфными к Si-матрице
А.Б.Талочкин , И.Б.Чистохин
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Влияние фотоэдс на токопрохождение в контактах металл--полупроводник с барьером Шоттки
Н.А.Торхов
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Quantitative analysis of lattice disorder and crystallite size in organic semiconductor thin films
Jonathan Rivnay, Rodrigo Noriega, R. Joseph Kline, Alberto Salleo, and Michael F. Toney
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 07 July 2011
Temperature Continuous-Wave Operation of 1.3-μmTransistor Laser with AlGaInAs/InP Quantum Wells
Mizuki Shirao, Takashi Sato, Yuta Takino, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
Appl. Phys. Express, Vol: 4, No: 7 , published: 07 July 2011
Discovery of a nonstoichiometric Zn11MnSe13 magnetic magic quantum dot from ab initio calculations
Sachin P. Nanavati, Vijayaraghavan Sundararajan, Shailaja Mahamuni, S. V. Ghaisas, and Vijay Kumar
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 07 July 2011
Влияние параметров AlGaAs — (AlGa)xOy пьедестала на характеристики микродискового лазера с активной областью на основе InAs/InGaAs-квантовых точек
Н.В.Крыжановская , С.А.Блохин, М.В.Максимов, А.М.Надточий, А.Е.Жуков, К.В.Федорова , Н.Н.Леденцов , В.М.Устинов , Н.Д.Ильинская , Д.Бимберг
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Влияние нелинейного насыщения усиления на предельную частоту модуляции в лазерах на основе самоорганизующихся квантовых точек
А.Е.Жуков , Е.М.Аракчеева, Н.Ю.Гордеев, Ф.И.Зубов, Н.В.Крыжановская, М.В.Максимов, А.В.Савельев
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Фотолюминесценция гетероструктур на основе Hg1-xCdxTe, выращенных методом молекулярно-лучевой эпитаксии
К.Д.Мынбаев, Н.Л.Баженов, В.И.Иванов-Омский, Н.Н.Михайлов, М.В.Якушев, А.В.Сорочкин, В.Г.Ремесник, С.А.Дворецкий, В.С.Варавин, Ю.Г.Сидоров
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Фотолюминесценция CdTe, выращенного при значительном отклонении от термодинамического равновесия
В.С.Багаев, Ю.В.Клевков, С.А.Колосов, В.С.Кривобок , Е.Е.Онищенко, А.А.Шепель
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Проявление избыточных центров рождения электронно-дырочных пар, возникших в результате полевого и термического стрессов и их последующей аннигиляции, в динамических вольт-амперных характеристиках Si-МОП структур со сверхтонким окислом
Е.И.Гольдман, Н.Ф.Кухарская, В.Г.Нарышкина, Г.В.Чучева
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Electrically tuned g tensor in an InAs self-assembled quantum dot
R. S. Deacon, Y. Kanai, S. Takahashi, A. Oiwa, K. Yoshida, K. Shibata, K. Hirakawa, Y. Tokura, and S. Tarucha
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 06 July 2011
Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells
T. Nuytten, M. Hayne, Bhavtosh Bansal, H. Y. Liu, M. Hopkinson, and V. V. Moshchalkov
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 05 July 2011
Simultaneous and direct measurement of carrier diffusion constant and mobility in organic semiconductors and deviation from standard Einstein relation
Awnish K. Tripathi, Durgesh C. Tripathi, and Y. N. Mohapatra
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 01 July 2011
Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells
J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, J. Förstner, T. Meier, and M. Oestreich
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 01 July 2011
Nuclear dynamics during Landau-Zener singlet-triplet transitions in double quantum dots
Arne Brataas and Emmanuel I. Rashba
Phys. Rev. B: Condens. Matter, Vol: 84, No: 4 , published: 01 July 2011
Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2
A. Kuc, N. Zibouche, and T. Heine
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Slowdown of light due to exciton-polariton propagation in ZnO
S. L. Chen, W. M. Chen, and I. A. Buyanova
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Observation of exchange Coulomb interactions in the quantum Hall state at ν=3
A. B. Van’kov, T. D. Rhone, A. Pinczuk, I. V. Kukushkin, Loren N. Pfeiffer, Ken W. West, and V. Umansky
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Phonon confinement and plasmon-phonon interaction in nanowire-based quantum wells
Bernt Ketterer, Jordi Arbiol, and Anna Fontcuberta i Morral
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Tuning of the spin-orbit interaction in a quantum dot by an in-plane magnetic field
M. P. Nowak, B. Szafran, F. M. Peeters, B. Partoens, and W. J. Pasek
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges
J. Feilhauer and M. Moško
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 30 June 2011
Electron-phonon scattering in topological insulators
Sébastien Giraud and Reinhold Egger
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 29 June 2011
Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
Cezary Śliwa and Tomasz Dietl
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 29 June 2011
GaN/Fe core/shell nanowires for nonvolatile spintronics on Si
Cunxu Gao, Rouin Farshchi, Claudia Roder, Pinar Dogan, and Oliver Brandt
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 29 June 2011
Surface core-level shifts on Ge(111)c(2×8): Experiment and theory
M. Kuzmin, M. J. P. Punkkinen, P. Laukkanen, J. J. K. Lång, J. Dahl, V. Tuominen, M. Tuominen, R. E. Perälä, T. Balasubramanian, J. Adell, B. Johansson, L. Vitos, K. Kokko, and I. J. Väyrynen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 28 June 2011
Anomalous Hall response of topological insulators
Dimitrie Culcer and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 28 June 2011
Effect of quasibound states on coherent electron transport in twisted nanowires
Giampaolo Cuoghi, Andrea Bertoni, and Andrea Sacchetti
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 28 June 2011
Charged dopants in semiconductor nanowires under partially periodic boundary conditions
Tzu-Liang Chan, S. B. Zhang, and James R. Chelikowsky
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 28 June 2011
Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2 nanowires
O. Demichel, V. Calvo, P. Noé, B. Salem, P.-F. Fazzini, N. Pauc, F. Oehler, P. Gentile, and N. Magnea
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 28 June 2011
Band-gap renormalization in InP/GaxIn1-xP quantum dots
A. K. Nowak, E. Gallardo, H. P. van der Meulen, J. M. Calleja, J. M. Ripalda, L. González, and Y. González
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 28 June 2011
Surface plasmons and topological insulators
Andreas Karch
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 27 June 2011
Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe
Jie Ma, Su-Huai Wei, T. A. Gessert, and Ken K. Chin
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 27 June 2011
Identification of substitutional Li in n-type ZnO and its role as an acceptor
K. M. Johansen, A. Zubiaga, I. Makkonen, F. Tuomisto, P. T. Neuvonen, K. E. Knutsen, E. V. Monakhov, A. Yu. Kuznetsov, and B. G. Svensson
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 27 June 2011
Estimation of Fermi Level Changes Caused by Changes in Ambient Conditions around Organic Semiconductors by Seebeck Effect Measurement
Kouji Suemori, Ryuuto Yamamoto, and Toshihide Kamata
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Fabrication of ZnO Films Alloyed with LiGaO2 by RF-Magnetron Sputtering and Their Optical Property
Takahisa Omata, Keizo Tanaka, and Shinya Otsuka-Yao-Matsuo
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma
Kwang-Ho Kwon, Alexander Efremov, Youngkeun Kim, Chi-Woo Lee, and Kwangsoo Kim
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
Masafumi Tajima and Tamotsu Hashizume
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
Masafumi Tajima and Tamotsu Hashizume
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
Takuma Nanjo, Tsukasa Motoya, Akihumi Imai, Yosuke Suzuki, Katsuomi Shiozawa, Muneyoshi Suita, Toshiyuki Oishi, Yuji Abe, Eiji Yagyu, Kiichi Yoshiara, and Yasunori Tokuda
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Exciton relaxation and coupling dynamics in a GaAs/AlxGa1-xAs quantum well and quantum dot ensemble
G. Moody, M. E. Siemens, A. D. Bristow, X. Dai, A. S. Bracker, D. Gammon, and S. T. Cundiff
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 27 June 2011
General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green’s Function
Chun-Nan Chen, Wei-Long Su, Meng-En Lee, Jen-Yi Jen, and Yiming Li
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Coulomb oscillations in the Fano-Kondo effect and zero-bias anomalies in a double-dot mesotransistor
A. Aldea, M. Ţolea, and I. V. Dinu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 27 June 2011
Magnetic field control of intersubband polaritons in narrow-gap semiconductors
Giovanni Pizzi, Francesca Carosella, Gérald Bastard, and Robson Ferreira
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 27 June 2011
On Optical Properties of CdTe/ZnTe Quantum Rings
Woo-Pyo Hong and Seoung-Hwan Park
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Influence of Annealing on the Structure and 1.54 μmPhotoluminescence of Er-Doped ZnO Thin Films Prepared by Sol–Gel Method
Lei Miao, Xiudi Xiao, Fanyong Ran, Sakae Tanemura, and Gang Xu
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631)
Víctor Hugo Méndez-García, Gerardo García-Liñán, Edgar López-Luna, Esteban Cruz-Hernández, and Máximo López-López
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method
Wei Zhao, Lai Wang, Wenbin Lv, Lei Wang, Jiaxing Wang, Zhibiao Hao, and Yi Luo
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon
Takashi Ohzone, Toshihiro Matsuda, Souta Hase, Shingo Nohara, and Hideyuki Iwata
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Thin-Film Transistors with Six-Step Photomask Structure
Sang-Jin Lee, Jae-Hoon Park, Kum-Mi Oh, Seok-Woo Lee, Kyung-Eon Lee, Woo-Sup Shin, Myung-chul Jun, Yong-Suk Yang, and Yong-Kee Hwang
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Ryosuke Iijima, Lisa F. Edge, John Bruley, Vamsi Paruchuri, and Mariko Takayanagi
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements
Koshiro Kashima, Atsuhiko Fukuyama, Kentaro Sakai, Hirosumi Yokoyama, Masahiko Kondow, Tetsuo Ikari
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy–Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
Akio Suzuki, Takayuki Mori, Atsuhiko Fukuyama, Tetsuo Ikari, Ji-Hyun Paek, Masahito Yamaguchi
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Development of Hybrid Photovoltaic Cells by Incorporating CuInS2 Quantum Dots into Organic Photoactive Layers
Minwoo Nam, Sehan Lee, Jaehyun Park, Sang-Wook Kim, Kee-Keun Lee
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions
Hiromu Shibata, Yuta Shiratori, Seiya Kasai
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
High-Voltage Schottky Barrier Diode on Silicon Substrate
Min-Woo Ha, Cheong Hyun Roh, Dae Won Hwang, Hong Goo Choi, Hong Joo Song, Jun Ho Lee, Jung Ho Park, Ogyun Seok, Jiyong Lim, Min-Koo Han,  Cheol-Koo Hahn
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Characterization of Low-Frequency Noise in GaAs Nanowire Field-Effect Transistors Controlled by Schottky Wrap Gate
Kensuke Miura, Yuta Shiratori,  Seiya Kasai
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Single-Electron Stochastic Resonance Using Si Nanowire Transistors
Katsuhiko Nishiguchi,  Akira Fujiwara
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime
Dolgopolov V.T., Gold A.
Письма в ЖЭТФ, Vol: 94, No: 6 , published: 24 June 2011
Occupation of electron subbands in optically excited δ-acceptor-doped GaAs/AlxGa1-xAs heterostructure
J. Łusakowski, R. Buczko, K.-J. Friedland, and R. Hey
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 24 June 2011
Spin dephasing and photoinduced spin diffusion in a high-mobility two-dimensional electron system embedded in a GaAs-(Al,Ga)As quantum well grown in the [110] direction
R. Völkl, M. Griesbeck, S. A. Tarasenko, D. Schuh, W. Wegscheider, C. Schüller, and T. Korn
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 24 June 2011
Anisotropic magnetotransport in SrTiO3 surface electron gases generated by Ar+ irradiation
F. Y. Bruno, J. Tornos, M. Gutierrez del Olmo, G. Sanchez Santolino, N. M. Nemes, M. Garcia-Hernandez, B. Mendez, J. Piqueras, G. Antorrena, L. Morellón, J. M. De Teresa, M. Clement, E. Iborra, C. Leon, and J. Santamaria
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 23 June 2011
Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies
M. Arita, K. Shimada, Y. Utsumi, O. Morimoto, H. Sato, H. Namatame, M. Taniguchi, Y. Hadano, and T. Takabatake
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 22 June 2011
Finite-size effects in the phonon density of states of nanostructured germanium: A comparative study of nanoparticles, nanocrystals, nanoglasses, and bulk phases
D. Şopu, J. Kotakoski, and K. Albe
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 22 June 2011
Impurity Effect of a Bound Polaron in Quantum Rods
Jing-lin Xiao, Zhao-Hua Ding
J. Low Temp. Phys., Vol: 163, No: 5/6 , published: 22 June 2011
Suppression of Zeeman Splitting of the Energy Levels of Exciton-Polariton Condensates in Semiconductor Microcavities in an External Magnetic Field
P. Walker, T. C. H. Liew, D. Sarkar, M. Durska, A. P. D. Love, M. S. Skolnick, J. S. Roberts, I. A. Shelykh, A. V. Kavokin, and D. N. Krizhanovskii
Phys. Rev. Lett., Vol: 106, No: 25 , published: 22 June 2011
Entanglement entropy and quantum phase transitions in quantum dots coupled to Luttinger liquid wires
Moshe Goldstein, Yuval Gefen, and Richard Berkovits
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 21 June 2011
Quantum transport in indium nitride nanowires
Liubing Huang, Dongdong Li, Paichun Chang, Sheng Chu, Hans Bozler, Igor S. Beloborodov, and Jia G. Lu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 21 June 2011
Scattering mechanisms in a high-mobility low-density carbon-doped (100) GaAs two-dimensional hole system
J. D. Watson, S. Mondal, G. A. Csáthy, M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 20 June 2011
Exciton and polarization contributions to optical transition energies in an epitaxial organic monolayer on a dielectric substrate
Mathias Müller, Eric Le Moal, Reinhard Scholz, and Moritz Sokolowski
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 20 June 2011
Magnetic-field effect in organic photoconductive devices studied by time-of-flight
F. Wang, J. Rybicki, K. A. Hutchinson, and M. Wohlgenannt
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 20 June 2011
Optical evidence for intermolecular coupling in mixed films of pentacene and perfluoropentacene
K. Broch, U. Heinemeyer, A. Hinderhofer, F. Anger, R. Scholz, A. Gerlach, and F. Schreiber
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 20 June 2011
Ultrafast polariton relaxation dynamics in an organic semiconductor microcavity
T. Virgili, D. Coles, A. M. Adawi, C. Clark, P. Michetti, S. K. Rajendran, D. Brida, D. Polli, G. Cerullo, and D. G. Lidzey
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 20 June 2011
Взаимная синхронизация двух связанных генераторов автоколебаний на основе сверхрешеток GaAs/AlGaAs
Расулова Г.К., Брунков П.Н., Пентин И.В., Ковалюк В.В., Горшков К.Н., Казаков А.Ю., Иванов С.Ю., Егоров А.Ю., Саксеев Д.А., Конников С.Г.
Ж. техн. физ., Vol: 81, No: 6 , published: 18 June 2011
Характеристики излучения тонкопленочных электролюминесцентных источников на базе нанокомпозитных пленок ZnSe
Валеев Р.Г., Бельтюков А.Н., Ветошкин В.М., Романов Э.А., Елисеев А.А.
Ж. техн. физ., Vol: 81, No: 6 , published: 18 June 2011
Raman scattering study of anharmonic phonon decay in InN
Núria Domènech-Amador, Ramon Cuscó, Luis Artús, Tomohiro Yamaguchi, and Yasushi Nanishi
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 17 June 2011
Optical Coherent Control Induced by an Electric Field in a Semiconductor: A New Manifestation of the Franz-Keldysh Effect
J. K. Wahlstrand, H. Zhang, S. B. Choi, S. Kannan, D. S. Dessau, J. E. Sipe, and S. T. Cundiff
Phys. Rev. Lett., Vol: 106, No: 24 , published: 17 June 2011
Spectral, optical, and transport properties of the adiabatic anisotropic Holstein model: Application to slightly doped organic semiconductors
C. A. Perroni, A. Nocera, V. Marigliano Ramaglia, and V. Cataudella
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 17 June 2011
Transport through a quantum dot with two parallel Luttinger liquid leads
Florian Elste, David R. Reichman, and Andrew J. Millis
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 17 June 2011
Persistent light-induced change in the effective band gap and reversible control over the effective band gap in bulk semiconductor crystals
Sharon Shwartz, K. V. Adarsh, Mordechai Segev, Evgeny Lakin, Emil Zolotoyabko, and Uri El-Hanany
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 16 June 2011
Dephasing of Triplet-Sideband Optical Emission of a Resonantly Driven InAs/GaAs Quantum Dot inside a Microcavity
S. M. Ulrich, S. Ates, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
Phys. Rev. Lett., Vol: 106, No: 24 , published: 16 June 2011
Перспективы создания СВЧ-элементов на основе полупроводниковых алмазных материалов
Алтухов А.А., Бугаев А.С., Гуляев Ю.В., et al.
Успехи соврем. радиоэлектрон., Vol: 2011, No: 6 , published: 16 June 2011
Effect of B, Si and P Co-doping on Electronic Properties of Mn-doped AlN Crystals
Syrotyuk S.V., Shved V.M.
Укр. фiз. ж., Vol: 56, No: 6 , published: 14 June 2011
Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport
J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet, and Y. Q. Li
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 14 June 2011
Stability of the Bi2Se3(111) topological state: Electron-phonon and electron-defect scattering
Richard C. Hatch, Marco Bianchi, Dandan Guan, Shining Bao, Jianli Mi, Bo Brummerstedt Iversen, Louis Nilsson, Liv Hornekær, and Philip Hofmann
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 14 June 2011
Исследование фоточувствительных гетероструктур InAs/GaAs с квантовыми точками, выращенных методом ионно-лучевого осаждения
Л. С. Лунин, И. А. Сысоев, Д. Л. Алфимова, et al.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 6 , published: 14 June 2011
Влияние дельта-слоя Mn на спектры фоточувствительности структур с квантовыми ямами InxGa1 – xAs/GaAs
А. П. Горшков, И. А. Карпович, Д. О. Филатов, et al.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 6 , published: 14 June 2011
Исследование локальной плотности электронных состояний в квантовых кольцах InGaAs/GaAs методом комбинированной СТМ/АСМ
Д. О. Филатов, П. А. Бородин, А. А. Бухараев
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 6 , published: 14 June 2011
Measurement of Electron-Hole Friction in an n-Doped GaAs/AlGaAs Quantum Well Using Optical Transient Grating Spectroscopy
Luyi Yang, J. D. Koralek, J. Orenstein, D. R. Tibbetts, J. L. Reno, and M. P. Lilly
Phys. Rev. Lett., Vol: 106, No: 24 , published: 13 June 2011
Теория резонанса Фано в спектрах примесного возбуждения p-GaAs
Алешкин В.Я., Бурдейный Д.И., Жолудев М.С.
Физ. тверд. тела, Vol: 53, No: 6 , published: 11 June 2011
Поляризационная зависимость резонансов Фано в примесной фотопроводимости квантовых ям, легированных мелкими донорами
Алешкин В.Я., Антонов А.В., Жолудев М.С., Паневин В.Ю., Воробьев Л.Е., Фирсов Д.А., Васильев А.П., Жуков А.Е. 
Физ. тверд. тела, Vol: 53, No: 6 , published: 11 June 2011
Идентификация вакансии азота в монокристалле AlN: исследования методами ЭПР и термолюминесценции
Солтамов В.А., Ильин И.В., Солтамова А.А., Толмачев Д.О., Мохов Е.Н., Баранов П.Г.
Физ. тверд. тела, Vol: 53, No: 6 , published: 11 June 2011
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires
Neophytos Neophytou and Hans Kosina
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 10 June 2011
RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
Diego Marti, C. R. Bolognesi, Yvon Cordier, Magdalena Chmielowska, Mohammed Ramdani
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
Farid Medjdoub, Malek Zegaoui, Nicolas Waldhoff, Bertrand Grimbert, Nathalie Rolland,  Paul-Alain Rolland
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Фотолюминесценция наноструктуризированных пленок кубического карбида кремния, выращенных на кремнии
Л. К. Орлов, Э. А. Штейнман, В. И. Вдовин
Изв. РАН. Сер. физ., Vol: 75, No: 5 , published: 10 June 2011
Multidirectional Observation of Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots
Yuichiro Ikeuchi, Tomoya Inoue, Masaki Asada, Yukihiro Harada, Takashi Kita, Eiji Taguchi, Hidehiro Yasuda
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Influence of High-Energy Electron Beam on Source Fluxes during Molecular Beam Epitaxy Growth on Photoluminescence Upconversion from the GaAs Band Gap
David M. Tex, Itaru Kamiya
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
2D-вырожденный электронный газ на границах раздела Ва/n-AlGaN и Ва/n-GaN
Г. В. Бенеманская, С. Н. Тимошнев, М. Н. Лапушкин, Г. Э. Франк-Каменецкая
Изв. РАН. Сер. физ., Vol: 75, No: 5 , published: 10 June 2011
High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
Tomonori Nishimura, Choong Hyun Lee, Toshiyuki Tabata, Sheng Kai Wang, Kosuke Nagashio, Koji Kita,  Akira Toriumi
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Three-Dimensional Structure Analysis of Metal–Oxide–Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
Shiano Ono, Miyuki Yamane, Hirohisa Okushima, Masanari Koguchi, Hiroyuki Shinada, Hiroshi Kakibayashi, Fumiko Yano, Takaaki Tsunomura, Akio Nishida, Tohru Mogami
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Strain-induced darkening of trapped excitons in coupled quantum wells at low temperature
N. W. Sinclair, J. K. Wuenschell, Z. Vörös, B. Nelsen, D. W. Snoke, M. H. Szymanska, A. Chin, J. Keeling, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 09 June 2011
Influence of Pressure Effect on CdS Electronic Structure and Optical Properties
Li Chunxia,  Dang Suihu,  Zhang Keyan, et al.
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 6 , published: 08 June 2011
Bound polaron in a strained wurtzite GaN/AlxGa1−xN cylindrical quantum dot
Zhang Bin, Yan Zuwei,  Zhang Min
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors
Ken K. Chin
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation
Zhang Renping, Yan Wei, Wang Xiaoliang, Yang Fuhua
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT
Zhou Yu, Sun Jiandong, Sun Yunfei, Zhang Zhipeng, Lin Wenkui, Liu Hongxin, Zeng Chunhong, Lu Min, Cai Yong, Wu Dongmin, Lou Shitao, Qin Hua  and Zhang Baoshun
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode
Chen Fengping, Zhang Yuming, Lü Hongliang, Zhang Yimen, Guo Hui  and Guo Xin
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature
Jia Kan, Sun Weifeng and Shi Longxing
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET
Liu Zhangli, Hu Zhiyuan, Zhang Zhengxuan, Shao Hua, Chen Ming, Bi Dawei, Ning Bingxu  and Zou Shichang
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Double humps and radiation effects of SOI NMOSFET
Cui Jiangwei, Yu Xuefeng, Ren Diyuan, He Chengfa, Gao Bo, Li Ming  and Lu Jian
J. Semicond., Vol: 32, No: 6 , published: 08 June 2011
Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films
O. Yastrubchak, J. Żuk, H. Krzyżanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 07 June 2011
Электронная структура и спектральные характеристики Zn-замещенных клатратных силицидов
Борщ Н.А., Переславцева Н.С., Курганский С.И.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
В.И. Энергия примесных резонансных состояний в теллуриде свинца с различным содержанием примеси таллия
Немов С.А., Равич Ю.И., Корчагин
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Примесные центры олова в стеклообразных халькогенидах мышьяка
Бордовский Г.А., Дашина А.Ю., Марченко А.В., et al.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Комментарий к статье Е.А. Татохина, А.В. Каданцева, А.Е. Бормонтова и В.Г. Задорожнего " Статистический метод релаксационной спектроскопии глубоких уровней в полупроводниках"
Ярыкин Н.А.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Экситонный спектр квантовых ям ZnO/ZnMgO
Бобров М.А., Торопов А.А., Иванов С.В., El-Shaer A., Bakin A., Waag A.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Эволюция оптических свойств при отжиге многослойной нанопериодической системы SiOx/ZrO2, содержащей нанокластеры кремния
Ершов А.В., Тетельбаум Д.И., Чугров И.А., et al.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Физические свойства тонких пленок SnS, полученных методом горячей стенки
Башкиров С.А., Гременок В.Ф., Иванов В.А.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Picosecond strain pulses probed by the photocurrent in semiconductor devices with quantum wells
D. Moss, A. V. Akimov, R. P. Campion, M. Henini, C. T. Foxon, L. Eaves, A. J. Kent, and B. A. Glavin
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 06 June 2011
Электрохимическое вольт-емкостное профилирование концентрации свободных носителей заряда в HEMT-гетероструктурах на основе соединений InGaAs/AlGaAs/GaAs
Брунков П.Н., Гуткин А.А., Рудинский М.Э., et al.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Резонансное прохождение электронов через трехбарьерные структуры в двухчастотном электрическом поле
Пашковский А.Б.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Эволюция деформационного состояния и компонентного состава при изменении количества квантовых ям в многослойных структурах InGaN/GaN
Кладько В.П., Кучук А.В., Сафрюк Н.В., et al.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Дрейфовая скорость электронов в квантовых ямах селективно легированных гетероструктур In0.5Ga0.5As/ AlxIn1-xAs и In0.2Ga0.8As/AlxGa1-xAs в сильных электрических полях
Пожела Ю., Пожела К., Рагуотис Р., Юцене В.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Циркулярная поляризация фотолюминесценции двумерной системы A+-центров в магнитном поле
Петров П.В., Иванов Ю.Л., Аверкиев Н.С.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Аномальная долговременная деградация фотолюминесценции слоев пористого кремния
Тимохов Д.Ф., Тимохов Ф.П.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Краевая фотолюминесценция монокристаллического кремния с p-n-переходом: структуры, изготовленные с использованием технологии высокоэффективных солнечных элементов
Емельянов А.М.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Сверхмедленные поверхностные плазмоны в волноводах из метаматериалов
Башарин А.А., Меньших Н.Л.
Письма в ЖЭТФ, Vol: 93, No: 11-12 , published: 05 June 2011
Проявление несжимаемых полосок в спектре краевого магнитоплазмона в условиях квантового эффекта Холла
Ханнанов M.Н., Фортунатов А.А., Кукушкин И.В.
Письма в ЖЭТФ, Vol: 93, No: 11-12 , published: 05 June 2011
Ratchet effects in quantum wells with a lateral superlattice
E. L. Ivchenko, S. D. Ganichev
Письма в ЖЭТФ, Vol: 93, No: 11-12 , published: 05 June 2011
Transient electroluminescence spikes in small molecular organic light-emitting diodes
Rui Liu, Zhengqing Gan, Ruth Shinar, and Joseph Shinar
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 03 June 2011
Evolution of surface states in Bi1-xSbx alloys across the topological phase transition
H. Guo, K. Sugawara, A. Takayama, S. Souma, T. Sato, N. Satoh, A. Ohnishi, M. Kitaura, M. Sasaki, Q.-K. Xue, and T. Takahashi
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 31 May 2011
Exciton dephasing in lead sulfide quantum dots by X-point phonons
Francesco Masia, Wolfgang Langbein, Iwan Moreels, Zeger Hens, and Paola Borri
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 31 May 2011
К вопросу определения эквивалентной толщины оксида в МДП-транзисторах нанометровых размеров
Красников Г.Я., Зайцев Н.А., Матюшкин И.В.
Микроэлектроника, Vol: 40, No: 1 , published: 31 May 2011
European conference on integrated optics (ECIO-10)

IET Optoelectron, Vol: 5, No: 5 , published: 29 May 2011
Spin splitting of holes in symmetric GaAs/GaxAl1-xAs quantum wells
M. Kubisa, K. Ryczko, and J. Misiewicz
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 27 May 2011
Phase Stability and Electronic Structure of In-Free Photovoltaic Materials Cu2IISnSe4 (II: Zn, Cd, Hg)
Satoshi Nakamura, Tsuyoshi Maeda, and Takahiro Wada
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Comparison of the Valence Band Structure Peculiarities in the Bi0.84–Sb0.16–Sn0.1 and Pure Semiconducting Bi1-xSbx Alloys
Bakir Tairov, Eltaj Yuzbashov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
The Phonon Percolation Scheme for Alloys: Extension to the Entire Lattice Dynamics and Pressure Dependence
Gopal Krushna Pradhan, Chandrabhas Narayana, Mala Narasappaya Rao, Matteo D’Astuto, Samrath Lal Chaplot, Olivier Pagès, A. Breidi, Jihane Souhabi, Andrei Postnikov, Sudip Kumar Deb, Tapas Ganguli, Alain Polian, Gopalkrishna Bhalerao, Abhay Shukla, Franciszek Firszt, and Wojciech Paszkowicz
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Ab initio Phonons in Kesterite and Stannite-Type Cu2ZnSnSe4
Andrei Postnikov and Narjes Beigom Mortazavi Amiri
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Ab initio Lattice Dynamics and Grüneisen Parameters of TlGaSe2
Dilara A. Huseinova, Firudin M. Hashimzade, Guseyin S. Orudzhev, Munira A. Nizametdinova,Kerim R. Allakhverdiev
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Excited States of the A and B Free Excitons in CuInSe2
Michael V. Yakushev, Franziska Luckert, Clement Faugeras, Anatoli V. Karotki, Alexander V. Mudryi, Robert W. Martin
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Metal–Insulator Transition Induced by Temperature in Bi2Te3-xClx Layered Compound
Nadir A. Abdullayev, Nadir M. Abdullayev, Xayala V. Aliguliyeva, Samir Sh. Gahramanov, Taira G. Kerimova, Konul M. Mustafayeva, Sergey A. Nemov, and Vladimir N. Zverev
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition
Takashi Matsumoto, Keiichi Mizuguchi, Takahiro Horii, Shiho Sano, Tsutomu Muranaka, Yoichi Nabetani, Satoshi Hiraki, Hideaki Furukawa, Akihiro Fukasawa, Shingo Sakamoto, Shigeru Hagihara, Hiroshi Kono, Kazuhiro Kijima, Osamu Abe, and Kouji Yashiro
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Characteristic of Low Resistivity Fluorine-Doped SnO2 Thin Films Grown by Spray Pyrolysis
Minoru Oshima and Kenji Yoshino
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Superionic Conductivity in One-Dimensional Nanofibrous TlGaTe2 Crystals
Rauf Sardarly, Oktay Samedov, Adil A`bdullayev, Famin Salmanov, Andzej Urbanovic, Frédéric Garet, and Jean-Louis Coutaz
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures
Farid H. Bayramov, Gert Irmer, Vladimir V. Toporov, and Bakhysh H. Bairamov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Comparison of Optical Parameters of Ge–As(Sb)–Se(Te) Glassy Films
Eldar Mammadov, Yong-Gu Shim, Junichi Sakamoto, Kazuki Wakita, Nazim Mamedov, Hisao Uchiki
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Oblique half-solitons and their generation in exciton-polariton condensates
H. Flayac, D. D. Solnyshkov, and G. Malpuech
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 26 May 2011
Spin–Orbit Interactions in a Quasi-Two-Dimensional Electron Gas with Finite Thickness
Enver Nakhmedov, Oktay Alekperov, Reinhold Oppermann
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Entropy of Superlattices in a Quantized Magnetic Field
Bahram M. Askerov, Sophia R. Figarova, Mehdi M. Mahmudov, Vagif R. Figarov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2
Takeaki Sakurai, Keiki Taguchi, Muhammad Monirul Islam, Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Shigeru Niki, and Katsuhiro Akimoto
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Photoluminescence of Cu(In,Ga)Se2 in the Solar Cell Preparation Process
Sho Shirakata, Shinji Yudate, Jyunji Honda, and Naoki Iwado
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Photoluminescence Study of AgInS2 by Using Confocal Microscopy System
Umihito Miyamoto, Akinori Sizuki, Kazuhiro Honjo, YongGu Shim, Takahiro Tokuda, Kenji Yoshino, Nazim Mamedov, and Kazuki Wakita
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Optical and Structural Properties of Zn–Cd–Mn–Se Double Quantum Well Systems
Takashi Matsumoto, Kenta Ohmori, Kazuki Kodama, Masao Hishikawa, Sakyo Fukasawa, Fumiaki Iwasaki, Tsutomu Muranaka, and Yoichi Nabetani
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Luminescence Properties of Barium Thio- and Selenogallates Doped with Eu, Ce, and Eu+Ce
Gennadii P. Yablonskii, Vitaly Z. Zubialevich, Eugenii V. Lutsenko, Arif M. Pashaev, Bahadir G. Tagiev, Oktay B. Tagiev, Said A. Abushov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Analysis of the Enhancing Effect of Rare Earth Ion Co-Doping on the Red Emission of CaGa2S4:Mn2+ in View of Its Decay Time
Akihiro Suzuki, Chiharu Hidaka, Takeo Takizawa, Shigetaka Nomura
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Effect of Ho Co-Doping on the Long Lasting Emission of CaGa2S4:Eu
Chiharu Hidaka and Takeo Takizawa
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure
Emil Huseynov, Namig Ismayilov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Peculiar Linear Dispersive Bands Observed in Angle-Resolved Photoemission Spectra of Tl-Based Ternary Chalcogenide TlGaTe2
Kojiro Mimura, Takahiko Ishizu, Satoru Motonami, Kazuki Wakita, Masashi Arita, Sadig Hamidov, Zakir Chahangirli, Yukihiro Taguchi, Hirofumi Namatame, Masaki Taniguchi, Guseyn Orudzhev, Nazim Mamedov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Magnetic field-induced control of transport in multiterminal focusing quantum billiards
C. Morfonios, D. Buchholz, and P. Schmelcher
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 25 May 2011
Магнитоплазменный резонанс в квантовой яме GaAs/AlGaAs в сильном параллельном магнитном поле
Козлов В.Е., Губарев С.И., Кукушкин И.В.
Письма в ЖЭТФ, Vol: 94, No: 5 , published: 24 May 2011
Люминесценция аморфных нанокластеров кремния
Гусев О.Б., Вайнштейн Ю.С., Ундалов Ю.К., Ельцина О.С., Трапезникова И.Н., Теруков Е.И., Сресели О.М.
Письма в ЖЭТФ, Vol: 94, No: 5 , published: 24 May 2011
Терагерцовое излучение, вызванное ванье-штарковской локализацией электронов в естественной сверхрешетке карбида кремния
Санкин В.И., Андрианов А.В., Захарьин А.О., Петров А.Г.
Письма в ЖЭТФ, Vol: 94, No: 5 , published: 24 May 2011
Thermoelectric transport properties of silicon: Toward an ab initio approach
Zhao Wang, Shidong Wang, Sergey Obukhov, Nathalie Vast, Jelena Sjakste, Valery Tyuterev, and Natalio Mingo
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 23 May 2011
Dynamical effects and fluctuations of interaction-matrix elements for a ballistic quantum dot
L. Kaplan and Y. Alhassid
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 23 May 2011
Kondo screening regimes of a quantum dot with a single Mn ion
E. Vernek, Fanyao Qu, F. M. Souza, J. C. Egues, and E. V. Anda
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 23 May 2011
Effect of Excitons in AlGaAs/GaAs Superlattice Solar Cells
Jiro Nishinaga, Atsushi Kawaharazuka, Koji Onomitsu, Klaus H. Ploog,  Yoshiji Horikoshi
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Boussairi Bouzazi, Jong-Han Lee, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Band Alignment at the Cu2O/ZnO Heterojunction
Masaya Ichimura and Ying Song
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
High Temperature-Coefficient of Resistance at Room Temperature in W-Doped VO2 Thin Films on Al2O3 Substrate and Their Thickness Dependence
Hidefumi Takami, Kenichi Kawatani, Teruo Kanki, Hidekazu Tanaka
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Theoretical Investigation of Effect of Side Facets on Adsorption–Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires
Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells
Sang-Youp Yim, Joon Heon Kim, Mun Seok Jeong, Seung-Han Park, Jongmin Lee
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates
Ryosuke Iijima, Lisa F. Edge, John Bruley, Vamsi Paruchuri,  Mariko Takayanagi
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Wave-function-based approach to quasiparticle bands: Insight into the electronic structure of c-ZnS
A. Stoyanova, L. Hozoi, P. Fulde, and H. Stoll
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 19 May 2011
High-spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO, and BeO: A first-principles study
O. Volnianska and P. Boguslawski
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 19 May 2011
Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
S. Amloy, Y. T. Chen, K. F. Karlsson, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen, and P. O. Holtz
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 18 May 2011
Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
S. Amloy, Y. T. Chen, K. F. Karlsson, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen, and P. O. Holtz
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 18 May 2011
Spectroscopic investigation of excitons, photocarriers, and bias-induced carriers in regioregular poly(3-alkylthiophene)
Katsuichi Kanemoto, Motoaki Yasui, Tatsuya Higuchi, Daisuke Kosumi, Ichiro Akai, Tsutomu Karasawa, and Hideki Hashimoto
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 18 May 2011
Two-dimensional electron-hole system in HgTe-based quantum wells with surface orientation (112)
Z. D. Kvon, E. B. Olshanetsky, E. G. Novik, D. A. Kozlov, N. N. Mikhailov, I. O. Parm, and S. A. Dvoretsky
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 18 May 2011
Electric field effects on excitonic quantum beats in a single quantum well embedded in a GaAs/AlAs superlattice
Takayuki Hasegawa, Yoshihiro Takagi, and Masaaki Nakayama
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 18 May 2011
Probing the local temperature of a two-dimensional electron gas microdomain with a quantum dot: Measurement of electron-phonon interaction
S. Gasparinetti, F. Deon, G. Biasiol, L. Sorba, F. Beltram, and F. Giazotto
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 18 May 2011
Canyon of current suppression in an interacting two-level quantum dot
O. Karlström, J. N. Pedersen, P. Samuelsson, and A. Wacker
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 18 May 2011
Density functional theory study for polycrystalline ZnO doped with Si or Nb
Wolfgang Körner and Christian Elsässer
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 17 May 2011
Possible realization of the exciton Bose liquid phase in a hard-core boson model with ring-only exchange interactions
Tiamhock Tay (郑添福) and Olexei I. Motrunich
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 17 May 2011
Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy
A. D. Giddings, J. G. Keizer, M. Hara, G. J. Hamhuis, H. Yuasa, H. Fukuzawa, and P. M. Koenraad
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 17 May 2011
Subthreshold diode characteristics of InAs/GaAs quantum dot lasers
P. Spencer, E. Clarke, R. Murray, K. M. Groom, R. R. Alexander, and R. A. Hogg
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 17 May 2011
Photoluminescence and the exciton-phonon coupling in hydrothermally grown ZnO
R. J. Mendelsberg, M. W. Allen, S. M. Durbin, and R. J. Reeves
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 17 May 2011
Высокоэнергетический катионный экситон френкелевского типа и особенности его автолокализации в кристаллической системе CdI2-PbI2
Болеста И.М., Вистовский В.В., Глосковская Н.В., et al.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 May 2011
Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals
Fabien Devynck, Audrius Alkauskas, Peter Broqvist, and Alfredo Pasquarello
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 16 May 2011
Влияние быстрых нейтронов на электрофизические свойства ядерно-легированного кремния р-типа
Каримов М., Махкамов Ш., Турсунов Н.А., et al.
Изв. вузов. Физ., Vol: 54, No: 5 , published: 16 May 2011
Effects of vacancy structural defects on the thermal conductivity of silicon thin films
Zhang Xingli and Sun Zhaowei
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching
Ou Weiying, Zhao Lei, Diao Hongwei, Zhang Jun and Wang Wenjing
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
Спектры пропускания эпитаксиальных слоев твердого раствора Pb1-xEuxTe (0=< x=< 0.37) в области частот 7-4000 cm-1
Жукова Е.С., Аксенов Н.П., Горшунов Б.П., et al.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 May 2011
Exciton pattern generation in GaAs/AlxGa1-xAs multiple quantum wells
B. Fluegel, K. Alberi, L. Bhusal, A. Mascarenhas, D. W. Snoke, G. Karunasiri, L. N. Pfeiffer, and K. West
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 16 May 2011
Подвижность 2D-электронов при рассеянии на коррелированном распределении примесных ионов в тонких легированных слоях
Михеев В.М.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 May 2011
Квантование электронного спектра и локализация электронов и дырок в кремниевых квантовых точках
Гриценко В.А., Журавлев К.С., Надолинный В.А.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 May 2011
Physical properties of sprayed antimony doped tin oxide thin films: The role of thickness
A. R. Babar, S. S. Shinde, A. V. Moholkar, C. H. Bhosale, J. H. Kim and K. Y. Rajpure
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
Characteristics of CdTe nanocrystals synthesized by a Na2TeO3 source
Wang Meiping, Fu Kai  and Lin Jinhui
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
Энергетические особенности гетероструктуры NH/3C/NH-SiC, наведенные спонтанной поляризацией: общее рассмотрение
Давыдов С.Ю., Посредник О.В.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 May 2011
A physical-based pMOSFETs threshold voltage model including the STI stress effect
Wu Wei, Du Gang, Liu Xiaoyan, Sun Lei, Kang Jinfeng and Han Ruqi
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
Оптические свойства пленок a-C:H:Si и их структурных модификаций
Фролов В.Д., Герасименко В.А., Пименов С.М.
Кpатк. сообщ. по физ. ФИAН, Vol: 2011, No: 5 , published: 15 May 2011
Phonon and Polaron States of ZnO/GaN and GaN/AlN Cylindrical Wires
Boichuk V.I., Voronyak L.Ya., Voronyak Ya.M.
Укр. фiз. ж., Vol: 56, No: 5 , published: 14 May 2011
Effect of UV and γ-irradiation on the Structure and Optical Properties of α-C:H:N Films
Klyui N.I., Litovchenko V.G., Lisovsky I.P., et al.
Укр. фiз. ж., Vol: 56, No: 5 , published: 14 May 2011
Determination of Material Constants of Magneto-optical Crystals Using the Faraday Effect under Magneto-mechanical Resonance Conditions
Linchevskyi I.V., Petrishchev O.N.
Укр. фiз. ж., Vol: 56, No: 5 , published: 14 May 2011
Phase Conjugation in InSb(Cu)
Linnik L.F., Linnik L.G., Staryi S.V.
Укр. фiз. ж., Vol: 56, No: 5 , published: 14 May 2011
Formation of the Exciton Condensed Phases in Double Quantum Wells in the Presence of External Harmonic Potential
Sugakov V.I., Tomylko V.V., Chernyuk A.A.
Укр. фiз. ж., Vol: 56, No: 5 , published: 14 May 2011
Fin- and Island-Isolated AlGaN/GaN HFETs
Valizadeh, P. AlOtaibi, B.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Analytical Model for Power Switching GaN-Based HEMT Design
Esposto, M. Chini, A. Rajan, S.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress
DasGupta, S. Xiao Shen Schrimpf, R.D. Reed, R.A. Pantelides, S.T. Fleetwood, D.M. Bergman, J.I. Brar, B.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
SungGeun Kim Luisier, M. Paul, A. Boykin, T.B. Klimeck, G.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
UV and Visible Electroluminescence From a  Sn:Ga2O3/n+-Si Heterojunction by Metal–Organic Chemical Vapor Deposition
Jun Liang Zhao Xiao Wei Sun Hyukhyun Ryu Swee Tiam Tan
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode
Tai-You Chen Huey-Ing Chen Yi-Jung Liu Chien-Chang Huang Chi-Shiang Hsu Chung-Fu Chang Wen-Chau Liu
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
High-Electron-Mobility  Ge/GeO2 n-MOSFETs With Two-Step Oxidation
Choong Hyun Lee Nishimura, T. Nagashio, K. Kita, K. Toriumi, A.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)
Hokazono, A. Itokawa, H. Kusunoki, N. Mizushima, I. Inaba, S. Kawanaka, S. Toyoshima, Y.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Numerical Study of a Highly Scaled Bulk MOSFET With Block Oxide and Source/Drain-Tied Structure
Yi-Chuen Eng Jyi-Tsong Lin Chih-Hao Kuo Po-Hsieh Lin Yi-Hsuan Fan Hsuan-Hsu Chen
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
Seongjae Cho Kyung Rok Kim Byung-Gook Park In Man Kang
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect
Ali, A. Madan, H. Misra, R. Agrawal, A. Schiffer, P. Boos, J.B. Bennett, B.R. Datta, S.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
AlN/GaN MOS-HEMTs With Thermally Grown  Al2O3 Passivation
Taking, S.  MacFarlane, D.  Wasige, E. 
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Reliable Assessment of Progressive Breakdown in Ultrathin MOS Gate Oxides Toward Accurate TDDB Evaluation
Tsujikawa, S. Kanno, M. Nagashima, N.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Electrical Correlation of Double-Diffused Metal–Oxide–Semiconductor Transistors Exposed to Gamma Photons, Protons, and Hot Carriers
Palumbo, F. Faigon, A. Curro, G.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Performance of Trench Power MOSFET With Strained Si/SiGe Multilayer Channel
Shan Sun Jiann-Shiun Yuan Shen, Z.J.
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Microwave-induced Hall resistance in bilayer electron systems
S. Wiedmann, G. M. Gusev, O. E. Raichev, S. Krämer, A. K. Bakarov, and J. C. Portal
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 13 May 2011
Density of states of chaotic Andreev billiards
Jack Kuipers, Thomas Engl, Gregory Berkolaiko, Cyril Petitjean, Daniel Waltner, and Klaus Richter
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 13 May 2011
Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots
Martin Raith, Peter Stano, and Jaroslav Fabian
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 13 May 2011
Влияние разброса квантовых точек по форме на их совместную плотность состояний
Краснок А.Е., Дзюба В.П., Кульчин Ю.Н.
Письма в ЖТФ, Vol: 37, No: 9 , published: 13 May 2011
Создание профильного распределения концентрации рекомбинационных центров при электронном облучении кремния
Грехов И.В., Костина Л.С., Козловский В.В., Ломасов В.Н., Рожков А.В.
Письма в ЖТФ, Vol: 37, No: 9 , published: 13 May 2011
Ultrafast insulator-metal phase transition in VO2 studied by multiterahertz spectroscopy
A. Pashkin, C. Kübler, H. Ehrke, R. Lopez, A. Halabica, R. F. Haglund, Jr., R. Huber, and A. Leitenstorfer
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 12 May 2011
Андерсоновская локализация и псевдощель в энергетическом спектре дырок в PbTe : Tl при наличии резонансного рассеяния
Немов С.А., Равич Ю.И., Парфеньев Р.В., et al.
Физ. тверд. тела, Vol: 53, No: 5 , published: 11 May 2011
Электронные состояния на поверхности кремния после напыления и отжига пленки SiOx
Власенко Н.А., Олексенко П.Ф., Денисова З.Л., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Влияние дозы облучения высокоэнергетичными протонами на подвижность электронов в кристаллах n-Si
Пагава Т.А., Майсурадзе Н.И., Беридзе М.Г.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Роль неравновесного заряда в формировании термоэдс в примесном полупроводнике
Конин А.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Увеличение интенсивности фотолюминесценции и комбинационного рассеяния света в одномерных фотонных кристаллах на основе пористого кремния
Гончар К.А., Мусабек Г.К., Таурбаев Т.И., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
The influence of substrate temperature on the structural and optical properties of ZnS thin films
Ashraf M., Akhtar S.M.J., Ali Z., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Фотопроводимость пиролитических пленок сульфида кадмия, легированных Cs
Майорова Т.Л.,Клюев В.Г.,Самофалова Т.В.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Фоточувствительные структуры на монокристаллах CuIn5Te8: создание и свойства
Боднарь И.В., Рудь В.Ю., Рудь Ю.В., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
A New InGaP/GaAs Tunneling Heterostructure—Emitter Bipolar Transistor (T-HEBT)
Tsai Jung-Hui, Lee Ching-Sung, Lour Wen-Shiung, et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
Lenka T.R., Panda A.K.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Nonequilibrium transport in the Anderson model of a biased quantum dot: Scattering Bethe ansatz phenomenology
Sung-Po Chao and Guillaume Palacios
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 11 May 2011
Исследование диэлектрических процессов в аморфных пленках ( As2 Se3)1-x Bix
Кастро Р.А., Грабко Г.И.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Влияние встроенного электрического поля на оптические и электрофизические свойства P-HEMT наногетероструктур AlGaAs/InGaAs/GaAs
Хабибуллин Р.А., Васильевский И.С., Галиев Г.Б., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Спектры электролюминесценции и поглощения полупроводниковых лазеров с низкими оптическими потерями на основе квантово-размерных гетероструктур InGaAs/AlGaAs/GaAs
Слипченко С.О., Подоскин А.А., Пихтин Н.А., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Влияние магнитного поля на электрофизические свойства поверхностно-барьерных структур Bi-Si-Al
Павлык Б.В., Грыпа А.С., Слободзян Д.П., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials
Bed Nidhi Pantha, I-wen Feng, Krishna Aryal, Jing Li, Jing-Yu Lin, Hong-Xing Jiang
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban, Jun-ichi Yamamoto, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,  Hiroshi Amano
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
Optically Pumped Green (530–560 nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays
Shusuke Ishizawa, Katsumi Kishino, Ryuichi Araki, Akihiko Kikuchi,  Shuichi Sugimoto
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
Nonequilibrium frequency-dependent noise through a quantum dot: A real-time functional renormalization group approach
C. P. Moca, P. Simon, C. H. Chung, and G. Zaránd
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 10 May 2011
Kondo effects in a triangular triple quantum dot with lower symmetries
A. Oguri, S. Amaha, Y. Nishikawa, T. Numata, M. Shimamoto, A. C. Hewson, and S. Tarucha
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 10 May 2011
Lasing properties of InP/(Ga0.51In0.49)P quantum dots in microdisk cavities
M. Witzany, R. Roßbach, W.-M. Schulz, M. Jetter, P. Michler, T.-L. Liu, E. Hu, J. Wiersig, and F. Jahnke
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 10 May 2011
Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy
Masafumi Jo, Joris. G. Keizer, Takaaki Mano, Paul M. Koenraad,  Kazuaki Sakoda
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation
Keisuke Yamamoto, Ryuji Ueno, Takeshi Yamanaka, Kana Hirayama, Haigui Yang, Dong Wang, Hiroshi Nakashima
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm
Ryousuke Terao, Toru Kanazawa, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato,  Yasuyuki Miyamoto
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka,  Shinichi Takagi
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
Strictly correlated uniform electron droplets
E. Räsänen, M. Seidl, and P. Gori-Giorgi
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 09 May 2011
Degenerate versus semidegenerate transport in a correlated two-dimensional hole system
Richard L. J. Qiu, Xuan P. A. Gao, Loren N. Pfeiffer, and Ken W. West
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 09 May 2011
Carrier transfer in the optical recombination of quantum dots
D. F. Cesar, M. D. Teodoro, V. Lopez-Richard, G. E. Marques, E. Marega Jr., V. G. Dorogan, Yu. I. Mazur, and G. J. Salamo
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 09 May 2011
Quantum transport through a transverse quantum-dot shuttle
Z. T. Jiang, C. L. Yu, R. M. Zhao, J. Lü, and Q. Z. Han
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 09 May 2011
Optical Aharonov-Bohm effect on Wigner molecules in type-II semiconductor quantum dots
Rin Okuyama, Mikio Eto, and Hiroyuki Hyuga
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 09 May 2011
Study of DOS and energy band structures in beryllium chalcogenides
R. K. Thapa, Sandeep M. P., Ghimire and Lamuanpuia
Indian J. Phys., Vol: 85, No: 5 , published: 08 May 2011
Influence of Substrate Temperature on Properties of Aluminum-Doped Zinc Oxide Films Prepared by DC Magnetron Sputtering
Yang Changhu, Ma Zhongquan, Yuan Jianhui, et al.
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 5 , published: 08 May 2011
Temperature-Dependent Optical Absorption of Silicon-Nanostructure Thin Film
Ding Wenge, Yuan Jing, Li Wenbo, et al.
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 5 , published: 08 May 2011
Boundary Conditions for Thermoelectric Cooling in pn Junction
Igor Lashkevych, Yury G. Gurevich
Int. J. Thermophys., Vol: 32, No: 5 , published: 07 May 2011
Dependence between the Energy-Gap Width and ShallowImpurities in Semiconductors with Tetrahedral Symmetry
Zurab Gogua, Giorgi Kantidze
Bull. Georg. Nat. Acad. Sci., Vol: 5, No: 2 , published: 06 May 2011
Preparation and optical properties of AgGaS2 nanofilms
Jianjun Zhang, Yi Huang
Cryst. Res. Technol., Vol: 46, No: 5 , published: 06 May 2011
Optical and magnetic properties of (Zn,Mn)O nanostructures synthesized by CVD method
V. K. Sharma, B. K. Gupta, G. D. Varma
Cryst. Res. Technol., Vol: 46, No: 5 , published: 06 May 2011
Crystallography and cathodoluminescence of ultra-long GaN nanowires
B. Y. Liu, A. M. Wu, F. W. Qin
Cryst. Res. Technol., Vol: 46, No: 5 , published: 06 May 2011
Electronic structure of Ge(111)-(2×1) surface in the presence of doping atoms. Ab initio analysis of STM data
Savinov S.V., Oreshkin S.I., Maslova N.S.
Письма в ЖЭТФ, Vol: 93, No: 9 , published: 05 May 2011
Квантовый эффект Холла в квазитрехмерной пленке HgTe
Ольшанецкий Е.Б., Квон З.Д., Кобылкин С.С., et al.
Письма в ЖЭТФ, Vol: 93, No: 9 , published: 05 May 2011
Бозе-конденсат экситонных поляритонов в ловушке
Воронова Н.С., Елистратов А.А., Лозовик Ю.Е.
Письма в ЖЭТФ, Vol: 93, No: 10 , published: 05 May 2011
Condensates induced by interband coupling in a double-well lattice
Qi Zhou, J. V. Porto, and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 05 May 2011
Dark states in transport through triple quantum dots: The role of cotunneling
I. Weymann, B. R. Bułka, and J. Barnaś
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 05 May 2011
Characteristics of heat generation in a quantum dot
Li-Ling Zhou, Shu Shen Li, Jian Ning Wei, and Shao Qin Wang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 05 May 2011
Multiphoton absorption in germanium using pulsed infrared free-electron laser radiation
D. Seo, J. M. Gregory, L. C. Feldman, N. H. Tolk, and P. I. Cohen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 04 May 2011
Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC
J. W. Sun, I. G. Ivanov, S. Juillaguet, and J. Camassel
Phys. Rev. B: Condens. Matter, Vol: 83, No: 19 , published: 03 May 2011
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy
G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, and T. Tiedje
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 03 May 2011
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy
G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, and T. Tiedje
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 03 May 2011
Transport theory of coupled quantum dots based on the auxiliary-operator method
Jung Hyun Oh, D. Ahn, and Vladimir Bubanja
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 03 May 2011
Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)
J. Krügener, H. J. Osten, and A. Fissel
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 03 May 2011
Energetics and metastability of the silicon vacancy in cubic SiC
Fabien Bruneval and Guido Roma
Phys. Rev. B: Condens. Matter, Vol: 83, No: 14 , published: 29 April 2011
Оптическое детектирование электрического поля в n-i-n GaAs/AlGaAs -гетероструктуре с двойными квантовыми ямами
Алешкин В.Я., Гавриленко Л.В., Гапонова Д.М., et al.
Письма в ЖЭТФ, Vol: 93, No: 7 , published: 29 April 2011
Theory of optical spin orientation in silicon
J. L. Cheng, J. Rioux, J. Fabian, and J. E. Sipe
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 29 April 2011
Electrically driven singularity and control of carrier spin of a hybrid quantum well
Pilkyung Moon, Won Jun Choi, and J. D. Lee
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 29 April 2011
Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: many-body effects
Gold A.
Письма в ЖЭТФ, Vol: 93, No: 8 , published: 29 April 2011
Two-spin dephasing by electron-phonon interaction in semiconductor double quantum dots
Xuedong Hu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 29 April 2011
Hopping conduction and magnetoresistance of a GaAs/AlxGa1-xAs quantum well with embedded InAs dots
L. Li, Gil-Ho Kim, K. J. Thomas, and D. A. Ritchie
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 28 April 2011
Kramers polarization in strongly correlated carbon nanotube quantum dots
Jong Soo Lim, Rosa López, Gian Luca Giorgi, and David Sánchez
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 28 April 2011
Quantized Auger recombination of biexcitons in CdSe nanorods studied by time-resolved photoluminescence and transient-absorption spectroscopy
Seiji Taguchi, Masaki Saruyama, Toshiharu Teranishi, and Yoshihiko Kanemitsu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 27 April 2011
Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys GaxIn1-xP
Yong Zhang and Lin-Wang Wang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 26 April 2011
Детектор ультрафиолетового излучения с внутренним усилением на основе гетероструктуры SnO2-ZnSe
Махний В.П., Мельник В.В., Орлецкий И.Г.
Письма в ЖТФ, Vol: 37, No: 8 , published: 26 April 2011
Диффузное рассеяние рентгеновских лучей на системах с квантовыми точками эллипсоидальной формы
Пунегов В.И., Сивков Д.В., Кладько В.П.
Письма в ЖТФ, Vol: 37, No: 8 , published: 26 April 2011
Особенности деградации высоковольтных 4H-SiC p-i-n-диодов под действием импульсов прямого тока
Левинштейн М.Е., Иванов П.А., Palmour J.W., Agarwal A.K., Das М.К.
Письма в ЖТФ, Vol: 37, No: 8 , published: 26 April 2011
Ground-state properties of microcavity polariton condensates at arbitrary excitation density
Kenji Kamide and Tetsuo Ogawa
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 25 April 2011
Experimental quantitative study into the effects of electromigration field moderation on step bunching instability development on Si(111)
V. Usov, C. O Coileain, and I. V. Shvets
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 25 April 2011
Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays
Jianqi Liu, Jianfeng Wang, Xiaojing Gong, Jun Huang, Ke Xu, Taofei Zhou, Haijian Zhong, Yongxin Qiu, Demin Cai, Guoqiang Ren, and Hui Yang
Appl. Phys. Express, Vol: 4, No: 4 , published: 24 April 2011
Density-matrix approach for an interacting polariton system
I. G. Savenko, E. B. Magnusson, and I. A. Shelykh
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 22 April 2011
Real-time effective-action approach to the Anderson quantum dot
Dénes Sexty, Thomas Gasenzer, and Jan Pawlowski
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 22 April 2011
Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots
Yu-Huai Liao, Juan I. Climente, and Shun-Jen Cheng
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 22 April 2011
Observation of dark exciton luminescence from ZnO nanocrystals in the quantum confinement regime
Sekika Yamamoto and Tomobumi Mishina
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 22 April 2011
Multiple photoexcitation of two-dimensional electron systems: Bichromatic magnetoresistance oscillations
Jesús Iñarrea
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 21 April 2011
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas
D. Spirito, L. Di Gaspare, G. Frucci, F. Evangelisti, A. Di Gaspare, A. Notargiacomo, E. Giovine, S. Roddaro, and F. Beltram
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 21 April 2011
High near-ultraviolet Raman efficiency of silicon nanowires with small cross sections
Vladimir Poborchii, Tetsuya Tada, Yukinori Morita, Toshihiko Kanayama, and Pavel I. Geshev
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 21 April 2011
Stark spectroscopy and radiative lifetimes in single self-assembled CdTe quantum dots
Ł. Kłopotowski, V. Voliotis, A. Kudelski, A. I. Tartakovskii, P. Wojnar, K. Fronc, R. Grousson, O. Krebs, M. S. Skolnick, G. Karczewski, and T. Wojtowicz
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 21 April 2011
Correlation of optical and structural properties of GaN/AlN core-shell nanowires
L. Rigutti, G. Jacopin, L. Largeau, E. Galopin, A. De Luna Bugallo, F. H. Julien, J.-C. Harmand, F. Glas, and M. Tchernycheva
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 21 April 2011
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth
Moresco M., Bertazzi F., Bellotti E.
IEEE J. Quantum Electron. , Vol: 47, No: 4 , published: 20 April 2011
Bandstructure Engineering With a 2-D Patterned Quantum Well Superlattice
Verma V.B.,Dias N.L., Reddy U., Bassett K.P.,Xiuling Li, Coleman, J.J.
IEEE J. Quantum Electron. , Vol: 47, No: 4 , published: 20 April 2011
Optical Frequency Conductance, Susceptance and Admittance of Quantum Wells
Szkopek T.
IEEE J. Quantum Electron. , Vol: 47, No: 4 , published: 20 April 2011
Резонансный захват дырок в модулированно-легированных структурах n-ALGaAs/GaAs с квантовыми ямами
Яременко Н.Г., Карачевцева М.В., Страхов В.А.
Докл. АН(Россия), Vol: 437, No: 3 , published: 20 April 2011
Defect-dominated diameter dependence of fracture strength in single-crystalline ZnO nanowires: In situ experiments
Mo-Rigen He and Jing Zhu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 18 April 2011
Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
V. Jovanov, T. Eissfeller, S. Kapfinger, E. C. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, and J. J. Finley
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 18 April 2011
Электролюминесцентные характеристики светодиодов среднего ИК-диапазона на основе гетероструктур InGaAsSb/GaAlAsSb при высоких рабочих температурах
Петухов А.А., Журтанов Б.Е., Молчанов С.С., et al.
Ж. техн. физ., Vol: 81, No: 4 , published: 17 April 2011
Влияние давления и механического напряжения на электронные свойства AlN и GaN
Брудный В.Н., Кособуцкий А.В., Колин Н.Г.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 April 2011
Electrostatically trapping indirect excitons in coupled InxGa1-xAs quantum wells
G. J. Schinner, E. Schubert, M. P. Stallhofer, J. P. Kotthaus, D. Schuh, A. K. Rai, D. Reuter, A. D. Wieck, and A. O. Govorov
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 15 April 2011
Origin of negative magnetoresistance in polycrystalline SnO2 films
T. A. Dauzhenka, V. K. Ksenevich, I. A. Bashmakov, and J. Galibert
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 15 April 2011
Scaling analysis of Kondo screening cloud in a mesoscopic ring with an embedded quantum dot
Ryosuke Yoshii and Mikio Eto
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 15 April 2011
Elementary excitations in charge-tunable InGaAs quantum dots studied by resonant Raman and resonant photoluminescence spectroscopy
Tim Köppen, Dennis Franz, Andreas Schramm, Christian Heyn, Johann Gutjahr, Daniela Pfannkuche, Detlef Heitmann, and Tobias Kipp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 14 April 2011
Quantum correlated electron dynamics in a quantum-dot sensitized solar cell: Keldysh function approach
Yuri Dahnovsky
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 13 April 2011
Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS
Kozyukhin S., Golovchak R., Kovalskiy A., et al.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Состояния атомов сурьмы и олова в халькогенидах свинца
Бордовский Г.А., Немов С.А., Марченко А.В., et al.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Гальваномагнитные явления в продольном автосолитоне в p-InSb в поперечном и продольном магнитных полях
Камилов И.К., Степуренко А.А., Гумметов А.Э.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Подвижность неосновных носителей заряда при низком уровне инжекции в полупроводниках
Поморцева Л.И.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Electronic and Optical Properties of Indium Zinc Oxide Thin Films Prepared by Using Nanopowder Target
Hwa-Min Kim, Kang Bae, and Sunyoung Sohn
Jpn. J. Appl. Phys., Vol: 50, No: 4R , published: 12 April 2011
Спектры пропускания пленок тройного соединения CuGa3Se5  в области края собственного поглощени
Боднарь И.В.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Особенности фотоэлектрических и оптических свойств пленок аморфного гидрогенизированного кремния, полученных плазмохимическим осаждением из смеси моносилана с водородом
Казанский А.Г., Теруков Е.И., Форш П.А., et al.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Influence of substrate and film thickness on structural, optical and electrical properties of ZnO thin films
N. Gopalakrishnan,L. Balakrishnan,K. Latha,S. Gowrishankar
Cryst. Res. Technol., Vol: 46, No: 4 , published: 12 April 2011
Поглощение и спектры оптических параметров в аморфных твердых растворах системы Se-S
Джалилов Н.З., Дамиров Г.М.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor
A. Kunold, A. Balocchi, F. Zhao, T. Amand, N. Ben Abdallah, J. C. Harmand, and X. Marie
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 12 April 2011
Пространственная неравномерность протекания тока и ее учет при определении характеристик поверхностно облучаемых фотодиодов на основе InAsSbP/InAs
Зотова Н.В., Карандашев С.А., Матвеев Б.А., et al.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Bulk photovoltaic effect of LiNbO3:Fe and its small-polaron-based microscopic interpretation
O. F. Schirmer, M. Imlau, and C. Merschjann
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 12 April 2011
Тиристоры на основе гетероструктур GaAs-AlGaAs с полностью оптической связью
Данильченко В.Г., Корольков В.И., Пономарев С.И., et al.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Synthesis and characterization of colloidal gallium selenide nanowires
O. A. Balitskii,E. Borowiak-Palen,W. Konicki
Cryst. Res. Technol., Vol: 46, No: 4 , published: 12 April 2011
Влияние толщины образца и дозы gamma -облучения на проявление радиационно-индуцированных оптических эффектов в халькогенидных стеклообразных полупроводниках системы Ge-Sb-S
Кавецкий Т.С.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Перколяция и люминесценция экситонов в двухфазных структурах SiO2/ZnO с большой плотностью и случайным распределением квантовых точек по сферической поверхности
Бондарь Н.В.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Synthesis and photoluminescence properties of ZnO nanowire arrays
L. C. Zhang,Y. F. Ruan,D. L. Wang,C. X. Qiu
Cryst. Res. Technol., Vol: 46, No: 4 , published: 12 April 2011
Поверхностно-барьерные структуры на монокристаллах четырехкомпонентных твердых растворов CdMgMnTe: создание и свойства
Рудь В.Ю., Рудь Ю.В., Теруков Е.И.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Raman spectra of cubic and amorphous Ge2Sb2Te5 from first principles
Gabriele C. Sosso, Sebastiano Caravati, Riccardo Mazzarello, and Marco Bernasconi
Phys. Rev. B: Condens. Matter, Vol: 83, No: 13 , published: 11 April 2011
Nano Structural and Thermoelectric Properties of SiGeAu Thin Films
Hiroaki Takiguchi, Masami Aono, and Yoichi Okamoto
Jpn. J. Appl. Phys., Vol: 50, No: 4R , published: 10 April 2011
Разогрев и охлаждение двумерного электронного газа терагерцевым излучением
Будкин Г.В., Тарасенко С.А.
Ж. эксперим. и теор. физ., Vol: 139, No: 4 , published: 10 April 2011
Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth
Brown D.F., Shinohara K., Williams A., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters
Heller E.R., Vetury R., Green D.S.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics
Changjoon Yoon, Gyoujin Cho, Sangsig Kim
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Voltage Noise Characteristics of Polysilicon P-I-N Diodes
Jamshidi-Roudbari A., Hatalis M.K.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Novel Hot-Carrier Degradation Mechanisms in the Lateral Insulated-Gate Bipolar Transistor on SOI Substrate
Qinsong Qian, Weifeng Sun, Siyang Liu, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Hole Effective Masses as a Booster of Self-Consistent Six-Band κ x p Simulation in Inversion Layers of pMOSFETs
Ming-Jer Chen, Chien-Chih Lee, Kuan-Hao Cheng
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
A Fast and Accurate Method to Study the Impact of Interface Traps on Germanium MOS Performance
Hellings G., Eneman G., Mitard J., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs
Roy A.S., Mudanai S.P., Stettler M.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
On-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained Si0.5Ge0.5 Quantum-Well pMOSFET Along (110) and (100) Channel Directions
Se-Hoon Lee, Nainani, A., Jungwoo Oh, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Gate Capacitance Reduction Due to the Inversion Layer in High- k /Metal Gate Stacks Within a Subnanometer EOT Regime
Iijima R., Edge L.F., Ariyoshi K., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics
Kuzum D., Jin-Hong Park, Krishnamohan T., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Characterization of Enhanced Stress Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering
Tsung-Yi Lu, Tien-Shun Chang, Shih-An Huang, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Influence of Elastic and Inelastic Electron–Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs
Akhavan N.D., Afzalian A., Kranti A., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n+ -Polysilicon Ultrathin Gate Oxide nMOSFETs
Ming-Jer Chen, Sou-Chi Chang, Shin-Jiun Kuang, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Device Characteristics and Equivalent Circuits for NMOS Gate-to-Drain Soft and Hard Breakdown in Polysilicon/SiON Gate Stacks
Nicollian P.E., Cakici R.T., Krishnan A.T., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode
Lin-An Yang, Yue Hao, Qingyang Yao, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 4 , published: 09 April 2011
Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
Makoto Inagaki, Hidetoshi Suzuki, Akio Suzuki, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 07 April 2011
Generic Hubbard model description of semiconductor quantum-dot spin qubits
Shuo Yang, Xin Wang, and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 07 April 2011
Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes
Takashi Katsuno, Yukihiko Watanabe, Hirokazu Fujiwara, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 07 April 2011
Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection
Piotr Bidzinski, Marcin Miczek, Boguslawa Adamowicz, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer
Chin-Hsiang Chen, Yu-Hsuan Tsai, Sung-Yi Tsai, and Chung-Fu Cheng
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Grain Boundary Effect on Charge Transport in Pentacene Thin Films
Martin Weis, Katarína Gmucová, Vojtech Nádaždy, Eva Majková, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
Shenghou Liu, Jinyan Wang, Rumin Gong, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 Modulation-Doped Heterostructures
Satoshi Taniguchi, Mikihiro Yokozeki, Masao Ikeda, and Toshi-kazu Suzuki
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Optical Characterization of an Asymmetric Quantum Well Structure for Broadband Laser Array Application
Wei-Li Chen
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots
Masamitu Takahasi and Seiji Fujikawa
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Level Broadening Effect in Electron Tunneling through Double Quantum Dots with Different g Factors
Shiu-Ming Huang, Yasuhiro Tokura, Hikota Akimoto, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Singlet–Triplet Mixing Due to g-Factor Mismatch in Double Quantum Dot
Ryo Takahashi, Kimitoshi Kono, Seigo Tarucha, and Keiji Ono
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Effects of Interface Grading on Electronic States and Optical Transitions in GaSb Type-II Quantum Dots in GaAs
Takuya Kawazu and Hiroyuki Sakaki
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium
Sung-Kwon Shin, Shaoyun Huang, Naoki Fukata, and Koji Ishibashi
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
Nobuya Mori, Hideki Minari, Shigeyasu Uno, and Junichi Hattori
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Excited State Bilayer Quantum Dot Lasers at 1.3 μm
Mohammed A. Majid, David T. D. Childs, Hifsa Shahid, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Tae-Youb Kim, Nae-Man Park, Cheol-Jong Choi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy
Shota Fujisawa, Takuya Sato, Shinjiro Hara, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
Hiroki Nakamoto, Fumitaro Ishikawa, Masahiko Kondow, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Current-Density Dependence of Transient Properties in Green Phosphorescent Organic Light-Emitting Diodes
Hirotake Kajii, Noriyoshi Takahota, Yadong Wang, and Yutaka Ohmori
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Direct Observation of Carrier Behavior Leading to Electroluminescence in Tetracene Field-Effect Transistor
Yuki Ohshima, Hideki Satou, Nobuaki Hirako, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Measurements of Electrostatic Potential Across p–n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopymal
Leonid Bolotov, Tetsuya Tada, Masanori Iitake, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode
Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
Tadashi Yamaguchi, Yoji Kawasaki, Tomohiro Yamashita, et. al
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor
Yuji Iwasaki, Yoshiaki Nakamura, Jun Kikkawa, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors
Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
Tomohisa Mizuno, Mitsuo Hasegawa, Keiji Ikeda, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
Yunxiang Yang, Gang Du, Ruqi Han, and Xiaoyan Liu
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Shuhei Amakawa, Asato Toda, Katsuroh Ohyama, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Takahiro Kamei, Yongxun Liu, Kazuhiko Endo, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Cheng-Wen Kuo, San-Lein Wu, Hau-Yu Lin, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
Xiao Gong, Hock-Chun Chin, Shao-Ming Koh, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Joseph J. Freedsman, Toshiharu Kubo, S. Lawrence Selvaraj, and Takashi Egawa
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics
Takashi Saito, Akihiro Tanaka, Takuro Hayashi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Calculation of carrier-concentration-dependent effective mass in Nb-doped anatase crystals of TiO2
Huynh Anh Huy, Bálint Aradi, Thomas Frauenheim, and Peter Deák
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 05 April 2011
Nonequilibrium dynamics of the Holstein polaron driven by an external electric field
Lev Vidmar, Janez Bonča, Marcin Mierzejewski, Peter Prelovšek, and Stuart A. Trugman
Phys. Rev. B: Condens. Matter, Vol: 83, No: 13 , published: 05 April 2011
Size effects in band gap bowing in nitride semiconducting alloys
I. Gorczyca, T. Suski, N. E. Christensen, and A. Svane
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 04 April 2011
Microwave-induced electron heating in the regime of radiation-induced magnetoresistance oscillations
A. N. Ramanayaka, R. G. Mani, and W. Wegscheider
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 04 April 2011
Excitonic nonlinear optical response from correlation-enhanced tunneling in mixed-type GaAs quantum wells
Carey Phelps, John Prineas, and Hailin Wang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 04 April 2011
Hyperfine interactions in silicon quantum dots
Lucy V. C. Assali, Helena M. Petrilli, Rodrigo B. Capaz, Belita Koiller, Xuedong Hu, and S. Das Sarma
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 04 April 2011
Учет рассеяния и перепоглощения при анализе спектров люминесценции наночастиц
Кочубей В. И. , Конюхова Ю. Г., Забенков И. В. et al.
Квант. электрон., Vol: 41, No: 4 , published: 03 April 2011
Quantum phase transition in quantum wires controlled by an external gate
Tobias Meng, Mehul Dixit, Markus Garst, and Julia S. Meyer
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 31 March 2011
Theory of magnetoelectric photocurrent generated by direct interband transitions in a semiconductor quantum well
Hai-Zhou Lu (卢海舟), Bin Zhou (周斌), Fu-Chun Zhang (张富春), and Shun-Qing Shen (沈顺清)
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 30 March 2011
Положительное квазиклассическое магнитосопротивление и квантовые эффекты в германиевом квантовом канале
Беркутов И.Б./Андриевский В.В./Комник Ю.Ф./Миронов О.А.
Физ. низ. температур, Vol: 36, No: 12 , published: 29 March 2011
Колебания спиновой поляризации в магнитно-неоднородном проводящем кольце
Пышкин П.В.
Физ. низ. температур, Vol: 36, No: 12 , published: 29 March 2011
Copper-related deep-level centers in irradiated p-type silicon
Nikolai Yarykin and Jörg Weber
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 28 March 2011
Constraints on conductances for Y-junctions of quantum wires
D. N. Aristov
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 28 March 2011
Light-polarization-independent nuclear spin alignment in a quantum dot
E. A. Chekhovich, A. B. Krysa, M. S. Skolnick, and A. I. Tartakovskii
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 28 March 2011
Tunable optical Aharonov-Bohm effect in a semiconductor quantum ring
Bin Li and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 28 March 2011
Temperature dependence of carrier transport and resistance switching in Pt/SrTi1-xNbxO3 Schottky junctions
Jianyong Li, Naoki Ohashi, Hideyo Okushi, and Hajime Haneda
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 28 March 2011
Preparation and Spectra of CdSe-Quantum-Dot-Doped PMMA Fiber Materials
Cheng Cheng, Wang Sunde, Ma Dewei.
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 3 , published: 26 March 2011
Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001)
L.V. Goncharova, M. Dalponte, T. Feng, T. Gustafsson, E. Garfunkel, P.S. Lysaght, and G. Bersuker
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 25 March 2011
Mesoscopic admittance of a double quantum dot
Audrey Cottet, Christophe Mora, and Takis Kontos
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 25 March 2011
Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted with 73As and 73Ge
K. Johnston, J. Cullen, M. O. Henry, E. McGlynn, and M. Stachura
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 25 March 2011
Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors
J. Karch, S. A. Tarasenko, E. L. Ivchenko, J. Kamann, P. Olbrich, M. Utz, Z. D. Kvon, and S. D. Ganichev
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 25 March 2011
Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors
J. Karch, S. A. Tarasenko, E. L. Ivchenko, J. Kamann, P. Olbrich, M. Utz, Z. D. Kvon, and S. D. Ganichev
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 25 March 2011
Calculated electronic structure of Pb1-xMnxTe (0⩽x<11%): The role of L and Σ valence band maxima
A. Łusakowski, P. Bogusławski, and T. Radzyński
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 24 March 2011
Phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride
K. H. Michel and B. Verberck
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 24 March 2011
Effects of s,p-d and s-p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
J. Suffczyński, A. Grois, W. Pacuski, A. Golnik, J. A. Gaj, A. Navarro-Quezada, B. Faina, T. Devillers, and A. Bonanni
Phys. Rev. B: Condens. Matter, Vol: 83, No: 9 , published: 23 March 2011
Exciton-exciton and exciton-phonon interactions in an interfacial GaAs quantum dot ensemble
G. Moody, M. E. Siemens, A. D. Bristow, X. Dai, D. Karaiskaj, A. S. Bracker, D. Gammon, and S. T. Cundiff
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 23 March 2011
Exciton-exciton and exciton-phonon interactions in an interfacial GaAs quantum dot ensemble
G. Moody, M. E. Siemens, A. D. Bristow, X. Dai, D. Karaiskaj, A. S. Bracker, D. Gammon, and S. T. Cundiff
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 23 March 2011
Controlling the nuclear polarization in quantum dots using optical pulse shape with a modest bandwidth
S. G. Carter, Sophia E. Economou, A. Shabaev, and A. S. Bracker
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 23 March 2011
Band gap variation in co-evaporated AgInSe2 thin films with 1.26 MeV He+ ion irradiation
M. C. Santhosh Kumarni, R. Pradeep
Indian J. Phys., Vol: 85, No: 3 , published: 22 March 2011
Origin of p-type conductivity in layered nGeTe·mSb2Te3 chalcogenide semiconductors
Zhimei Sun, Yuanchun Pan, Jian Zhou, Baisheng Sa, and Rajeev Ahuja
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 22 March 2011
Ab initio calculation of many-body effects on the second-harmonic generation spectra of hexagonal SiC polytypes
Hannes Hübener, Eleonora Luppi, and Valérie Véniard
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 22 March 2011
Thermal transport in AB superlattices
G. D. Mahan
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 22 March 2011
Analytical modeling of electrical characteristics of coaxial nanowire FETs
Alireza Kargar, Rahim Ghayour
Indian J. Phys., Vol: 85, No: 3 , published: 22 March 2011
Luminescence and absorption in germanium and silicon nanocrystals: The influence of compression, surface reconstruction, optical excitation, and spin-orbit splitting
Hans-Christian Weissker, Ning Ning, Friedhelm Bechstedt, and Holger Vach
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 22 March 2011
60Co  γ-ray induced gain degradation in bipolar junction transistors
S. R. Kulkarni, R. Damle
Indian J. Phys., Vol: 85, No: 3 , published: 22 March 2011
Polaron and bipolaron transport in a charge segregated state of a doped strongly correlated two-dimensional semiconductor
J. Miranda, T. Mertelj, V. Kabanov, and D. Mihailovic
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
Bernt Ketterer, Martin Heiss, Marie J. Livrozet, Andreas Rudolph, Elisabeth Reiger, and Anna Fontcuberta i Morral
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
Hybrid density functional study of oligothiophene/ZnO interface for photovoltaics
Na Sai, Kevin Leung, and James R. Chelikowsky
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
All-optical generation of coherent in-plane charge oscillations in GaAs quantum wells
Shekhar Priyadarshi, Klaus Pierz, Uwe Siegner, Philip Dawson, and Mark Bieler
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
All-optical generation of coherent in-plane charge oscillations in GaAs quantum wells
Shekhar Priyadarshi, Klaus Pierz, Uwe Siegner, Philip Dawson, and Mark Bieler
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
High-frequency response of a two-dimensional electron system under microwave irradiation
I. V. Andreev, V. M. Muravev, I. V. Kukushkin, S. Schmult, and W. Dietsche
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
Finite-temperature spintronic transport through Kondo quantum dots: Numerical renormalization group study
Ireneusz Weymann
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 21 March 2011
Coulomb blockade and hopping conduction in graphene quantum dots array
Daeha Joung, Lei Zhai, and Saiful I. Khondaker
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 21 March 2011
Greenberger-Horne-Zeilinger states in a quantum dot molecule
Anand Sharma and Pawel Hawrylak
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
Influence of as on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
Chi-Che Tseng, Shu-Cheng Mai, Wei-Hsun Lin, Shung-Yi Wu, Bang-Ying Yu, Shu-Han Chen, Shih-Yen Lin,Jing-Jong Shyue, Meng-Chyi Wu
IEEE J. Quantum Electron. , Vol: 47, No: 3 , published: 20 March 2011
Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
Toshiyuki Sameshima, Tomokazu Nagao, Shinya Yoshidomi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 3S , published: 19 March 2011
Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
Masahiko Hasumi, Jun Takenezawa, Tomokazu Nagao, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 3S , published: 19 March 2011
Light Response of Top Gate InGaZnO Thin Film Transistor
Sang-Hee Ko Park, Minki Ryu, Sung Min Yoon, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 3S , published: 19 March 2011
Seebeck Effects and Electronic Thermal Conductivity of IV–VI Materials
Akihiro Ishida, Tomohiro Yamada, Takayuki Nakano, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Thermoelectric Properties of Single-Crystalline SiC and Dense Sintered SiC for Self-Cooling Devices
Shinji Fukuda, Tomohisa Kato, Yoichi Okamoto, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Terahertz Birefringence in Zinc Oxide
Youngchan Kim, Jaewook Ahn, Bog G. Kim, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change
Taro Arakawa, Takahiro Toya, Motoki Ushigome, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy
Marius Millot, Nicolas Ubrig, Jean-Marie Poumirol, Iulian Gherasoiu, Wladek Walukiewicz, Sylvie George, Oliver Portugall, Jean Léotin, Michel Goiran, and Jean-Marc Broto
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 18 March 2011
Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films
Kiyoteru Kobayashi, Kokichi Ishikawa
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Effect of Indium Mole Fraction on the Diode Characteristics of ZnO:In/p-Si(111) Heterojunctions
Jong Hoon Lee, Bo Ra Jang, Ju Young Lee, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Influence of electron density and trion formation on the phase-coherent photorefractive effect in ZnSe quantum wells
A. Kabir and H. P. Wagner
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 18 March 2011
Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy
Francesco Ivaldi, Christian Meissner, Jarosław Domagala, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Blueshifting of Ion-Implanted InGaAs/InGaAsP Multiple Quantum Well Structures Using Two-Step Rapid Temperature Annealing Process
Young Tae Byun, Young-Min Jhon, Sun Ho Kim
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer
Tomoyuki Miyamoto Ryoichiro Suzuki
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer
Tomoyuki Miyamoto, Ryoichiro Suzuki, Tomoyuki Sengoku
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
Ji-Ho Park, Akihiro Wakahara, Hiroshi Okada, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells
Krzysztof Ryczko, Grzegorz Sęk, Marcin Motyka, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Photoluminescence Studies of Porous ZnO Nanorods
Min Su Kim, Kwang Gug Yim, Su Min Jeon, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Green Gap Spectral Range Light-Emitting Diodes with Self-Assembled InGaN Quantum Dots Formed by Enhanced Phase Separation
Il-Kyu Park and Seong-Ju Park
Appl. Phys. Express, Vol: 4, No: 4 , published: 18 March 2011
Inhomogeneous Barrier Height Analysis of (Ni/Au)–InAlGaN/GaN Schottky Barrier Diode
Nagarajan Subramaniyam, Markku Sopanen, Harri Lipsanen, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
Masashi Kato, Hidenori Ono, Masaya Ichimura, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition
Tsutomu Uesugi, Tetsu Kachi
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Interfacial Dipole at High-k Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
Li Qiang Zhu, Koji Kita, Tomonori Nishimura, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Seebeck Coefficient and Power Factor of Single-Crystalline Boron Nanobelts
Kazuhiro Kirihara, Takeshi Sasaki, Naoto Koshizaki, and Kaoru Kimura
Appl. Phys. Express, Vol: 4, No: 4 , published: 17 March 2011
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
Shibo Yang, Reina Miyagawa, Hideto Miyake, Kazumasa Hiramatsu, and Hiroshi Harima
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates
Shigefusa F. Chichibu, Kouji Hazu, Yuji Kagamitani, Takeyoshi Onuma, Dirk Ehrentraut, Tsuguo Fukuda, and Tohru Ishiguro
Appl. Phys. Express, Vol: 4, No: 4 , published: 17 March 2011
Improved Red Photoluminescence and Ferroelectricity in Layered Composite (Bi,Eu)4Ti3O12/ZnO Thin Films
Xiang Liu, Hong Zhou, Guangheng Wu, and Dinghua Bao
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Optical and Electrical Properties of µ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
Che-Kang Hsu, Jinn-Kong Sheu, Jia-Kuen Wang, Ming-Lun Lee, Kuo-Hua Chang, Shang-Ju Tu, and Wei-Chih Lai
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Junctionless Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
Dan Dan Zhao, Tomonori Nishimura, Choong Hyun Lee, Kosuke Nagashio, Koji Kita, and Akira Toriumi
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Channel Dopant Distribution in Metal–Oxide–Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
Hisashi Takamizawa, Koji Inoue, Yasuo Shimizu, Takeshi Toyama, Fumiko Yano, Takaaki Tsunomura, Akio Nishida, Tohru Mogami, and Yasuyoshi Nagai
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Real-time path integrals for quantum dots: Quantum dissipative dynamics with superohmic environment coupling
A. Vagov, M. D. Croitoru, M. Glässl, V. M. Axt, and T. Kuhn
Phys. Rev. B: Condens. Matter, Vol: 83, No: 9 , published: 16 March 2011
Carrier recombination dynamics in individual CdSe nanowires
Felix Vietmeyer, Pavel A. Frantsuzov, Boldizsar Janko, and Masaru Kuno
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 16 March 2011
Investigation of lateral modulation in antimonide superlattices
R. L. Forrest, J. Throckmorton, C. L. Canedy, G. Boishin, I. Vurgaftman, J. R. Meyer, and L. J. Whitman
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 16 March 2011
Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 16 March 2011
Local density approximation description of electronic properties of wurtzite cadmium sulfide (w-CdS)
E. C. Ekuma, L. Franklin, G. L. Zhao, J. T. Wang, D. Bagayoko
Can. J. Phys., Vol: 89, No: 3 , published: 15 March 2011
Quantum dots as single-photon sources: Antibunching via two-photon excitation
Matthias D. Wissert, Birgit Rudat, Uli Lemmer, and Hans-Jürgen Eisler
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 15 March 2011
Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy
Pavel G. Baranov, Anna P. Bundakova, Alexandra A. Soltamova, Sergei B. Orlinskii, Igor V. Borovykh, Rob Zondervan, Rogier Verberk, and Jan Schmidt
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 14 March 2011
Comparison of the surface electronic structures of H-adsorbed ZnO surfaces: An angle-resolved photoelectron spectroscopy study
Kenichi Ozawa and Kazuhiko Mase
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 14 March 2011
Effects of vacancy defects on thermal conductivity in crystalline silicon: A nonequilibrium molecular dynamics study
Yongjin Lee, Sangheon Lee, and Gyeong S. Hwang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 14 March 2011
Electron relaxation in quantum dots by the interatomic Coulombic decay mechanism
Ira Cherkes and Nimrod Moiseyev
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 14 March 2011
Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2
S. Kilpeläinen, F. Tuomisto, J. Slotte, J. Lundsgaard Hansen, and A. Nylandsted Larsen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 9 , published: 11 March 2011
High-temperature conductance of a two-dimensional superlattice controlled by spin-orbit interaction
Péter Földi, Viktor Szaszkó-Bogár, and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 11 March 2011
Quantum Andreev effect in two-dimensional HgTe/CdTe quantum well/superconductor systems
Qing-Feng Sun, Yu-Xian Li, Wen Long, and Jian Wang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 11 March 2011
Electronic structure of doped d0 perovskite semiconductors
R. Bistritzer, G. Khalsa, and A. H. MacDonald
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 10 March 2011
Phonons of single quintuple Bi2Te3 and Bi2Se3 films and bulk materials
Wei Cheng and Shang-Fen Ren
Phys. Rev. B: Condens. Matter, Vol: 83, No: 9 , published: 10 March 2011
Ultrasonic attenuation in amorphous silicon at 50 and 100 GHz
D. B. Hondongwa, B. C. Daly, T. B. Norris, B. Yan, J. Yang, and S. Guha
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 10 March 2011
Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt
D. Vu, H. F. Jurca, F. Maroun, P. Allongue, N. Tournerie, A. C. H. Rowe, D. Paget, S. Arscott, and E. Peytavit
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 10 March 2011
Time-convolutionless master equation for quantum dots: Perturbative expansion to arbitrary order
Carsten Timm
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 10 March 2011
Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering
V. Laneuville, F. Demangeot, R. Péchou, P. Salles, A. Ponchet, G. Jacopin, L. Rigutti, A. de Luna Bugallo, M. Tchernycheva, F. H. Julien, K. March, L. F. Zagonel, and R. Songmuang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 10 March 2011
Efficient controlled-phase gate for single-spin qubits in quantum dots
T. Meunier, V. E. Calado, and L. M. K. Vandersypen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 10 March 2011
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
M. Ahmad Kamarudin, M. Hayne, R. J. Young, Q. D. Zhuang, T. Ben, and S. I. Molina
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 10 March 2011
Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages
Bauer F.D.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Structural,optical,electrical and luminescence properties of electron beam evaporated CdSe:In films
Syed Ahamed Basheer M.G./Rajini K.S./Vidhya V.S./et al.
Cryst. Res. Technol., Vol: 46, No: 3 , published: 09 March 2011
Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis
Chowdhury M.R.I./Podder J./Islam A.B.M.O.
Cryst. Res. Technol., Vol: 46, No: 3 , published: 09 March 2011
High-Performance GaNAsSb/GaAs 1.55-μm Waveguide Photodetector
Xu Z., Saadsaoud N., Loke W.K.. et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs
Pil Sung Park, Rajan S.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Tunneling Processes in a Triangular Multibarrier Semiconductor Heterostructure
Leite T.N., de Oliveira H.P.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Proposal of High-Electron Mobility Transistors With Strained InN Channel
Kuzmik J., Georgakilas A.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
A Novel Transparent AZO-Gated Al0.2Ga0.8As/In0.2Ga0.8As pHEMT and Photosensing Characteristics Thereof
Ching-Sung Lee. Bo-Yi Chou. Wei-Chou Hsu
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
J. D. Plumhof, V. Křápek, F. Ding, K. D. Jöns, R. Hafenbrak, P. Klenovský, A. Herklotz, K. Dörr, P. Michler, A. Rastelli, and O. G. Schmidt
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 09 March 2011
Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices
Hsing-Hui Hsu, Horng-Chih Lin, Cheng-Wei Luo, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications
Sciuto A., D'Arrigo G., Roccaforte F., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Physical Foundation of a Recently Proposed Schottky-Contact Model
Schroeder D.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
The Soft Punchthrough+ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection
Antoniou M., Udrea F., Bauer F., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor
Chattopadhyay A., Mallik A.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo
Riddet C., Alexander C., Brown A.R., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated With a Full Replacement Gate Process
Özben E.D., Lopes J.M.J., Nichau A., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Completely Quantum–Mechanical Extraction of Equivalent Oxide Thickness of PMOS Gate Insulator
Hiraiwa A., Shima A., Ishikawa D.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides
Shu-Jau Chang, Jenn-Gwo Hwu
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering
Giusi G., Iannaccone G., Crupi F.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs
Horio K., Tanaka T., Itagaki K., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-_k Dielectric nMOSFETs
Yu-Ting Chen, Kun-Ming Chen, Cheng-Li Lin, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
Sheng-Chun Wang, Pin Su, Kun-Ming Chen, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 3 , published: 09 March 2011
Kondo effects and shot noise enhancement in a laterally coupled double quantum dot
Toshihiro Kubo, Yasuhiro Tokura, and Seigo Tarucha
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 08 March 2011
Analysis of the thermoelectric properties of n-type ZnO
Khuong P. Ong, David J. Singh, and Ping Wu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 07 March 2011
Optical, Structural, and Photocarrier Studies of Cux(CdTe)yOz Thin Films
R. Velazquez-Hernandez, I. Rojas-Rodriguez, J. Carmona-Rodríguez, S. Jiménez-Sandoval, M. E. Rodriguez-Garcia
Int. J. Thermophys., Vol: 32, No: 3 , published: 07 March 2011
Fine structure of zero-mode Landau levels in HgTe/HgxCd1-xTe quantum wells
M. Orlita, K. Masztalerz, C. Faugeras, M. Potemski, E. G. Novik, C. Brüne, H. Buhmann, and L. W. Molenkamp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 07 March 2011
Determination of spin-orbit coefficients in semiconductor quantum wells
S. Faniel, T. Matsuura, S. Mineshige, Y. Sekine, and T. Koga
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 07 March 2011
Dynamical properties of a nonequilibrium quantum dot close to a dissipative quantum phase transition
Chung-Hou Chung
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 07 March 2011
Analysis of current and shot noise correlations in a double quantum dot interferometer with interdot spin interactions
Marko Zivkovic, Brandon W. Langley, Ivana Djuric, and Chris P. Search
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 04 March 2011
Chiral spin textures of strongly interacting particles in quantum dots
Catherine J. Stevenson and Jordan Kyriakidis
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 04 March 2011
Exciton states in shallow ZnSe/(Zn,Mg)Se quantum wells: Interaction of confined and continuum electron and hole states
A. Pawlis, T. Berstermann, C. Brüggemann, M. Bombeck, D. Dunker, D. R. Yakovlev, N. A. Gippius, K. Lischka, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 04 March 2011
Magnetoresistance in a high-mobility two-dimensional electron gas
L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, and R. J. Haug
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 02 March 2011
Control of exciton-photon interactions in CuCl microcavities
M. Nakayama, K. Miyazaki, T. Kawase, and D. Kim
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 28 February 2011
Effect of dynamic disorder on charge transport along a pentacene chain
J. Böhlin, M. Linares, and S. Stafström
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 28 February 2011
Energy relaxation rate of the two-dimensional hole gas in a GaAs/InGaAs/GaAs quantum well
I. V. Soldatov, A. V. Germanenko, G. M. Minkov, O. E. Rut, and A. A. Sherstobitov
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 28 February 2011
Anticorrelation between the splitting and polarization of the exciton fine structure in single self-assembled InAs/GaAs quantum dots
Chia-Hsien Lin, Wen-Ting You, Hsiang-Yu Chou, Shun-Jen Cheng, Sheng-Di Lin, and Wen-Hao Chang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 28 February 2011
Kondo crossover in shot noise of a single quantum dot with orbital degeneracy
R. Sakano, T. Fujii, and A. Oguri
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 28 February 2011
Entanglement entropy between two coupled Tomonaga-Luttinger liquids
Shunsuke Furukawa and Yong Baek Kim
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 28 February 2011
Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence
D. M. Zayachuk, T. Slobodskyy, G. V. Astakhov, A. Slobodskyy, C. Gould, G. Schmidt, W. Ossau, and L. W. Molenkamp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 28 February 2011
PbSe Quantum Dot-Doped Sodium-Aluminum-Borosilicate Glass Fabricated by a Melting Method
Cheng Cheng, Jiang Huilü, Ma Dewei
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 2 , published: 26 February 2011
Experimental evidence for semiconducting behavior of Si-XII
S. Ruffell, K. Sears, A. P. Knights, J. E. Bradby, and J. S. Williams
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 25 February 2011
External-field effect on quantum features of radiation emitted by a quantum well in a microcavity
Eyob A. Sete, Sumanta Das, and H. Eleuch
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 83, No: 2 , published: 25 February 2011
Spontaneous emission in long-range surface plasmon-polariton amplifiers
Israel De Leon and Pierre Berini
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 24 February 2011
Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride
S. Galambosi, L. Wirtz, J. A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, and K. Hämäläinen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 23 February 2011
Native defects in hexagonal β-Si3N4 studied using density functional theory calculations
Maria-Elena Grillo, Simon D. Elliott, and Christoph Freysoldt
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 23 February 2011
Detection of spin injection into a double quantum dot: Violation of magnetic-field-inversion symmetry of nuclear polarization instabilities
Mark S. Rudner and Emmanuel I. Rashba
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 23 February 2011
Cooling dynamics of photoexcited carriers in Si studied using optical pump and terahertz probe spectroscopy
Takeshi Suzuki and Ryo Shimano
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 23 February 2011
Surface photovoltage effect at the p-WSe2:Rb surface: Photoemission experiment and numerical model
J. Buck, J. Iwicki, K. Rossnagel, and L. Kipp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 23 February 2011
Transient localization in crystalline organic semiconductors
S. Ciuchi, S. Fratini, and D. Mayou
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 23 February 2011
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range
H. Machhadani, M. Tchernycheva, S. Sakr, L. Rigutti, R. Colombelli, E. Warde, C. Mietze, D. J. As, and F. H. Julien
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 23 February 2011
Kondo effect and continuous quantum phase transitions in double quantum dots with on-site and interdot repulsion and magnetic field
Wei-zhong Wang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 23 February 2011
Determination of the exciton singlet-to-triplet ratio in single-layer organic light-emitting diodes
M. Carvelli, R. A. J. Janssen, and R. Coehoorn
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 23 February 2011
Excitonic coherence in a confined lattice: A simple model to highlight the relevance of perturbation theory
Vincent Pouthier
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 22 February 2011
Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions
J. J. M. van der Holst, F. W. A. van Oost, R. Coehoorn, and P. A. Bobbert
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 22 February 2011
Dielectric properties of polar-phthalocyanine monolayer systems with repulsive dipole interaction
H. Fukagawa, S. Hosoumi, H. Yamane, S. Kera, and N. Ueno
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 22 February 2011
Conductivity kinks in the transport of ultradilute two-dimensional GaAs hole systems in zero field
Jian Huang, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 22 February 2011
Temperature-manipulated spin transport through a quantum dot transistor
Fenghua Qi, Yibo Ying, and Guojun Jin
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 22 February 2011
Influence of electron-electron interaction on the cyclotron resonance spectrum of magnetic quantum dots containing few electrons
Nga T. T. Nguyen and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 22 February 2011
Thermoelectric Properties of Double Quantum Dots Embedded in a Nanowire
David M.-T. Kuo
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3 /AlGaN Interface
Chihoko Mizue, Yujin Hori, Marcin Miczek et al.
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation
Eugene Oh, Seung-Ho Jung, Jaegeun Lee, Seungho Cho et al.
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Variation of Chemical and Photoluminescence Properties of Mg-Doped GaN Caused by High-Temperature Process
Eri Ogawa, Tamotsu Hashizume
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
021602Influence of Contact Resistance on Effective Mobility in Organic Thin Film Transistor
Ling Li, Paul Heremans, Jin Jang
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Effect of Series Resistance on Field-Effect Mobility at Varying Channel Lengths and Investigation into the Enhancement of Source/Drain Metallized Thin-Film Transistor Characteristics
Nguyen Van Duy, Kyunghyun Baek, Dang Ngoc Son et al.
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Quantum Compact Model of Drain Current in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Exponential behavior of the Ohmic transport in organic films
Corneliu N. Colesniuc, Rudro R. Biswas, Samuel A. Hevia, Alexander V. Balatsky, and Ivan K. Schuller
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 18 February 2011
Transport through a quantum dot with excitonic dot-lead coupling
Florian Elste, David R. Reichman, and Andrew J. Millis
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 18 February 2011
Versatile Spectral Imaging With an Algorithm-Based Spectrometer Using Highly Tuneable Quantum Dot Infrared Photodetectors
Vines P. Tan C.H. David J.P.R., et al.
IEEE J. Quantum Electron. , Vol: 47, No: 2 , published: 17 February 2011
Electric-field control of magnetization in biased semiconductor quantum wires and point contacts
H. Lind, I. I. Yakimenko, and K.-F. Berggren
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 17 February 2011
Upconversion of infrared photons to visible luminescence using InAs-based quantum structures
David M. Tex and Itaru Kamiya
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 17 February 2011
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1-xBix
R. N. Kini, A. J. Ptak, B. Fluegel, R. France, R. C. Reedy, and A. Mascarenhas
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 16 February 2011
Plasmon polariton and 〈n〉=0 non-Bragg gaps in superlattices with metamaterials
C. A. A. de Carvalho, S. B. Cavalcanti, E. Reyes-Gómez, and L. E. Oliveira
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 16 February 2011
Band convergence and linearization error correction of all-electron GW calculations: The extreme case of zinc oxide
Christoph Friedrich, Mathias C. Müller, and Stefan Blügel
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 15 February 2011
Band convergence and linearization error correction of all-electron GW calculations: The extreme case of zinc oxide
Christoph Friedrich, Mathias C. Müller, and Stefan Blügel
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 15 February 2011
Forming and confining of dipolar excitons by quantizing magnetic fields
K. Kowalik-Seidl, X. P. Vögele, F. Seilmeier, D. Schuh, W. Wegscheider, A. W. Holleitner, and J. P. Kotthaus
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 15 February 2011
Temperature and voltage driven tunable metal-insulator transition in individual WxV1-xO2 nanowires
Tai-Lung Wu, Luisa Whittaker, Sarbajit Banerjee, and G. Sambandamurthy
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 15 February 2011
Local charging effects in nanocrystalline CdSe films
D. Toker, I. Balberg, O. Zelaya-Angel, E. Savir, and O. Millo
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 15 February 2011
Magnetic polaron formation and exciton spin relaxation in single Cd1-xMnxTe quantum dots
Å?. KÅ‚opotowski, Å?. CywiÅ„ski, P. Wojnar, V. Voliotis, K. Fronc, T. Kazimierczuk, A. Golnik, M. Ravaro, R. Grousson, G. Karczewski, and T. Wojtowicz
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 15 February 2011
Evidence of gate-tunable topological excitations in two-dimensional electron systems
R. Koushik, Matthias Baenninger, Vijay Narayan, Subroto Mukerjee, Michael Pepper, Ian Farrer, David A. Ritchie, and Arindam Ghosh
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 14 February 2011
Decay dynamics of radiatively coupled quantum dots in photonic crystal slabs
Philip Trøst Kristensen, Jesper Mørk, Peter Lodahl, and Stephen Hughes
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 14 February 2011
Bias-controlled single-electron charging of a self-assembled quantum dot in a two-dimensional-electron-gas-based n-i-Schottky diode
J. D. Mar, X. L. Xu, J. J. Baumberg, F. S. F. Brossard, A. C. Irvine, C. Stanley, and D. A. Williams
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 14 February 2011
Туннельная микроскопия процессов образования гексагонально-пирамидальных наноостровков Аu на поверхности монокристалла кремния
В. Л. Карбовский, Вишняк В.В., Курган Н.А., Касияненко В.Х.
Металлофиз. и нов. технол., Vol: 33, No: 2 , published: 13 February 2011
First Principles Materials Design of Negative Activation Energy and Transparent Conducting Sulfides in n-Type CuAl1-xSnxS2 and p-Type Cu1-xVCuxAlS2
Yoshimasa Tani, Kazunori Sato, Hiroshi Katayama-Yoshida
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults
Camarda Massimo, La Magna Antonino, Delugas Pietro, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Kelvin Probe Force Microscopy of Defects in ZnO Nanocrystals Associated with Emission at 3.31 eV
Saidislam Kurbanov, Woo Chul Yang, Tae Won Kang, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
First-Principles Study on Electronic Structure of Dangling Bond at Ge/GeO2 Interfaces
Tomoya Ono, Shoichiro Saito
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Electrical Transport Ability of Nanostructured Potassium-Doped Titanium Oxide Film
So-Yoon Lee, Ryosuke Matsuno, Kazuhiko Ishihara, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
High Carrier Mobility up to 1.4 cm2·V−1·s−1 in Non-Peripheral Octahexyl Phthalocyanine
Yasuo Miyake, Youyu Shiraiwa, Keizo Okada, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
Stephen W. Kaun, Man Hoi Wong, Sansaptak Dasgupta, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Auger Capture Induced Carrier Heating in Quantum Dot Lasers and Amplifiers
Uskov Alexander V. , Meuer Christian, Schmeckebier Holger, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Preparation of p-SnO/n-ZnO Heterojunction Nanowire Arrays and Their Optoelectronic Characteristics under UV Illumination
Fu-Shou Tsai, Shui-Jinn Wang, Yung-Chun Tu, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
Ming-Hua Lo, Yuh-Jen Cheng, Hao-Chung Kuo, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction
Masahiro Koike, Yuuichi Kamimuta, Tsutomu Tezuka
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
Kazuhiro Mochizuki, Akihisa Terano, Naoki Kaneda, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities
Dheeraj Mohata, Saurabh Mookerjea, Ashish Agrawal, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy
SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Эффекты переключения в пленках на основе Ge[2]Sb[2]Te[5]
Козюхин С. А., Кузьминых А. С., Митягин А. Ю., et al,
Радиотехн. и электрон. (Россия), Vol: 56, No: 2 , published: 11 February 2011
Signatures of Wigner molecule formation in interacting Dirac fermion quantum dots
Tomi Paananen, Reinhold Egger, and Heinz Siedentop
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 11 February 2011
Observation of strong resonant behavior in the inverse photoelectron spectroscopy of Ce oxide
J. G. Tobin, S. W. Yu, B. W. Chung, G. D. Waddill, L. Duda, and J. Nordgren
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 11 February 2011
Bound states and quantization of screening in the Wannier-Mott excitons
Adam J. Makowski
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 83, No: 2 , published: 10 February 2011
Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors
X. M. Duan, C. Stampfl, M. M. M. Bilek, D. R. McKenzie, and Su-Huai Wei
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 10 February 2011
Ultrafast percolative transport dynamics in silicon nanocrystal films
Lyubov V. Titova, Tyler L. Cocker, David G. Cooke, Xiongyao Wang, Al Meldrum, and Frank A. Hegmann
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 10 February 2011
Nanometer-scale mapping of the strain and Ge content of Ge/Si quantum dots using enhanced Raman scattering by the tip of an atomic force microscope
Y. Ogawa, T. Toizumi, F. Minami, and A. V. Baranov
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 10 February 2011
Charge transfer statistics of a molecular quantum dot with strong electron-phonon interaction
S. Maier, T. L. Schmidt, and A. Komnik
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 09 February 2011
Optical phonon scattering of cavity polaritons in an electroluminescent device
A. Delteil, A. Vasanelli, P. Jouy, D. Barate, J. C. Moreno, R. Teissier, A. N. Baranov, and C. Sirtori
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 09 February 2011
Spatiotemporal evolution of polaronic states in finite quantum systems
H. Fehske, G. Wellein, and A. R. Bishop
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 08 February 2011
Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices
A. M. Gilbertson, M. Fearn, A. Kormányos, D. E. Read, C. J. Lambert, M. T. Emeny, T. Ashley, S. A. Solin, and L. F. Cohen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 08 February 2011
InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 µm
Ong, D.S.G. Jo Shien Ng Yu Ling Goh, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Thickness-Dependent Structural and Optical Properties of VO2 Thin Films
Jianwei Ma, Gang Xu, Lei Miao et al.
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 07 February 2011
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and p-n Heterojunction Detectors
Itsuno A.M., Phillips J.D., Velicu S.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETs
Xiaoxu Cheng, Yan Wang
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
Maojun Wang, Chen K.J.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Electrothermal Access Resistance Model for GaN-Based HEMTs
Thorsell M., Andersson K., Hjelmgren H., Rorsman N.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs
Zhi Hong Liu, Geok Ing Ng, Arulkumaran S.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure
L. B. Zhang, F. Cheng, F. Zhai, and Kai Chang
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 07 February 2011
Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates
Yuichi Kawamura, Takuya Shono
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 07 February 2011
Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes
Yoshinobu Kawaguchi, Yoshihiko Tani, Pablo O. Vaccaro et al.
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 07 February 2011
Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs
Sung-Jin Choi, Chel-Jong Choi, Jee-Yeon Kim, et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part I: Theory
Huszka Z., Céli D., Seebacher E.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part II: Implementation, Parameter Extraction and Verification
Huszka Z., Céli D., Seebacher E.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit Conditions
Liquan Wang, Figueiredo J.M.L., Ironside C.N., Wasige E.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
Saurabh S., Kumar M.J.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar
Chatterjee A., Shrivastava M., Gossner H., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
An Insight Into ESD Behavior of Nanometer-Scale Drain Extended NMOS (DeNMOS) Devices: Part II (Two-Dimensional Study-Biasing & Comparison With NMOS)
Chatterjee A., Shrivastava M., Gossner H., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETs
Tsunomura T., Nishida A., Hiramoto T.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs
Kobayashi M., Mitard J., Irisawa T., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
Vitale S.A., Kedzierski J., Healey P., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs
Ioannidis E.G.. Tsormpatzoglou A., Tassis D.H. , et al.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by SiO2-Based Solid Electrolyte
Jie Jiang, Jia Sun, Aixia Lu, Qing Wan
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated HfO2 Gate-Oxide n-MOS Devices
Tackhwi Lee, Banerjee S.K.
IEEE Trans. Electron Devices , Vol: 58, No: 2 , published: 07 February 2011
Thermally activated population of microcavity polariton states under optical and electrical excitation
Grant H. Lodden and Russell J. Holmes
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 04 February 2011
Resistance oscillations induced by the Hall field in tilted magnetic fields
A. T. Hatke, M. A. Zudov, L. N. Pfeiffer, and K. W. West
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 04 February 2011
Signatures of an anomalous Nernst effect in a mesoscopic two-dimensional electron system
Srijit Goswami, Christoph Siegert, Michael Pepper, Ian Farrer, David A. Ritchie, and Arindam Ghosh
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 04 February 2011
Metal-insulator transition of the LaAlO3-SrTiO3 interface electron system
Y. C. Liao, T. Kopp, C. Richter, A. Rosch, and J. Mannhart
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 02 February 2011
Effects of vertex corrections on diagrammatic approximations applied to the study of transport through a quantum dot
Leandro Tosi, Pablo Roura-Bas, Ana María Llois, and Luis O. Manuel
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 02 February 2011
Single-dopant resonance in a single-electron transistor
V. N. Golovach, X. Jehl, M. Houzet, M. Pierre, B. Roche, M. Sanquer, and L. I. Glazman
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 02 February 2011
Математическое моделирование эволюции поляронных состояний
И. В. Амирханов, Е. В. Земляная, В. Д. Лахно, et al.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 1 , published: 28 January 2011
Диагностика распределения массива квантовых точек InAs/GaAs по высотам путем обработки тетрахлоридом углерода в условиях газофазной эпитаксии
А. В. Здоровейщев, П. Б. Демина, И. А. Карпович
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 1 , published: 28 January 2011
Reduction of thermal conductivity in PbTe:Tl by alloying with TlSbTe2
Heng Wang, Anek Charoenphakdee, Ken Kurosaki, Shinsuke Yamanaka, and G. Jeffrey Snyder
Phys. Rev. B: Condens. Matter, Vol: 83, No: 2 , published: 27 January 2011
Dynamical corrections to spin-wave excitations in quantum wells due to Coulomb interactions and magnetic ions
Cynthia Aku-Leh, Florent Perez, Bernard Jusserand, David Richards, and Grzegorz Karczewski
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 27 January 2011
Prediction of quantization of magnetic flux in double-layer exciton superfluids
Louk Rademaker, Jan Zaanen, and Hans Hilgenkamp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 1 , published: 24 January 2011
Polaron contributions to the biexciton binding energies in self-assembled quantum dots
Paweł Machnikowski
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 24 January 2011
Electrical transport in three-dimensional ensembles of silicon quantum dots
I. Balberg, J. Jedrzejewski, and E. Savir
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 24 January 2011
The quantum Boltzmann equation in semiconductor physics
D.W. Snoke
Annalen der Physik , Vol: 523, No: 1-2 , published: 22 January 2011
Optical properties of nitride nanostructures
A. Cantarero, A. Cros, N. Garro, et al.
Annalen der Physik , Vol: 523, No: 1-2 , published: 22 January 2011
Raman scattering on nanomaterials and nanostructures
Z.V. Popović, Z. Dohčević-Mitrović, M. Šćepanović, et al.
Annalen der Physik , Vol: 523, No: 1-2 , published: 22 January 2011
Theory of strain effects on the Raman spectrum of Si-Ge core-shell nanowires
J. Menéndez, R. Singh, J. Drucker
Annalen der Physik , Vol: 523, No: 1-2 , published: 22 January 2011
Polarization contrast linear spectroscopies for cubic semiconductors under stress: macro- and micro-reflectance difference spectroscopies
L.F. Lastras-Martínez, R.E. Balderas-Navarro, R. Castro-García, et al.
Annalen der Physik , Vol: 523, No: 1-2 , published: 22 January 2011
Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts
Yoshitaka Nakano, Nobuyuki Matsuki, Yoshihiro Irokawa, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Structural, Electrical, and Optical Properties of SnO2:Sb Films Prepared on Flexible Substrate at Room Temperature
Sung Uk Lee, Jin-Hyo Boo, Byungyou Hong
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
Yusuke Sakai, Tomohiko Morimoto, Takashi Egawa, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
Takayuki Sugiyama, Hiroshi Amano, Daisuke Iida, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Direct current driven by ac electric field in quantum wells
S. A. Tarasenko
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 19 January 2011
A Novel Fabrication of p–n Diode Based on ZnO Nanowire/p-NiO Heterojunction
Sheng-Po Chang, Chien-Yuan Lu, Shoou-Jinn Chang, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Ingo Tischer, Martin Feneberg, Martin Schirra, Hady Yacoub, Rolf Sauer, Klaus Thonke, Thomas Wunderer, Ferdinand Scholz, Levin Dieterle, Erich Müller, and Dagmar Gerthsen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 19 January 2011
Observation of Optical Fluorescence of GaN Thin Films in an Inductively-Coupled Plasma Containing High Energy Electrons
Ying Guo, Keiji Nakamura, Jing Zhang, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum
Ah Reum Lee, Hunsoo Jeon, Gang-Seok Lee, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Growth and Electrical Properties of 3C-SiC/Nanocrystalline Diamond Layered Films
Akira Koga, Kungen Teii, Masaki Goto, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Study of Electrical Response in Pt/GaN Schottky Barrier Diode to CO Gas for High Temperature Gas Sensor
Hiroshi Okada, Atsuki Naruse, Yuzo Furukawa, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Monte Carlo Study of the Coulomb Interaction in Nanoscale Silicon Devices
Nobuyuki Sano
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 19 January 2011
Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport
Shinichi Takagi, Mitsuru Takenaka
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 19 January 2011
Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices
Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 19 January 2011
Electrical Extractions of One Dimensional Doping Profile and Effective Mobility for Metal–Oxide–Semiconductor Field-Effect Transistors
Hyunho Park, Kong-soo Lee, Dohuyn Baek, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer
Koji Nakayama, Kimihiko Nakatani, Sara Khamseh, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Enhancement of Electron Injection in Organic Light-Emitting Diodes with Photosensitive Charge Generation Layer
Yuta Okawa, Shigeki Naka, Hiroyuki Okada
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Manipulation of Work Function and Surface Free Energy of Tungsten Oxide Hole Injection Layer Modified with a Self-Assembled Monolayer
Seong-Ho Kim, Hanae Otsuka, Hyea-Weon Shin, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Dependence on Annealing Temperature of Properties of Cu2ZnSnS4  Thin Films Prepared by Sol–Gel Sulfurization Method
Kazuya Maeda, Kunihiko Tanaka, Yuki Fukui, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Enhancement of the Open-Circuit Voltage and Hole Conduction of Tetraphenyl Porphyrin/C60 Multilayered Photovoltaic Device by the Insertion of Oxide Hole Collection Layers
Eiji Itoh, Yuji Higuchi, Daisuke Furuhata, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Charge Transporting Properties and Output Characteristics in Polythiophene:Fullerene Derivative Solar Cells
Yueh-Tsung Tsai, Kensuke Goto, Osamu Yoshikawa, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Adiabatic quantum state transfer in a nonuniform triple-quantum-dot system
Bing Chen, Wei Fan, and Yan Xu
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 83, No: 1 , published: 18 January 2011
Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
V. Consonni, M. Hanke, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 18 January 2011
Lattice thermal conductivity reduction in Bi2Te3 quantum wires with smooth and rough surfaces: A molecular dynamics study
Bo Qiu, Lin Sun, and Xiulin Ruan
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 18 January 2011
Local Transport Property of GaN Cluster as a Model of Nanowire
Masato Senami, Yuji Ikeda, Akitomo Tachibana
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Effects of Flow Transport of the Ar Carrier on the Synthesis of ZnO Nanowires by Chemical Vapor Deposition
Joon Hyock Choi, Ju Seok Seo, Seung Nam Cha, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Strain Effects on Optoelectronic Characteristics of Laterally Arrayed Silicon Nanowires on a Flexible Substrate
Jinyong Choi, Kyoungah Cho, Sanging Kim
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Fabrication of Organic Light-Emitting Diodes Using Photosynthetic Pigments Extracted from Spinach
Naoki Ohtani, Natsuko Kitagawa, Takashi Matsuda
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Solution-Processed Small Molecular Organic Light-Emitting Devices with a Mixed Single Layer
Zhaokui Wang, Shigeki Naka, Hiroyuki Okada
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes with High Electron Mobility
Eun Young Choi, Ji Hyun Seo, Heo Min Kim, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Self-Aligned Organic Light-Emitting Diodes with Color Changing by Ink-Jet Printing Dots
Ryu-ichi Satoh, Shigeki Naka, Miki Shibata, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Double-Faced Organic Light-Emitting Device Using Laminate Method
Takahiro Minani, Ryu-ichi Satoh, Hiroyuki Okada, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering
Ahmed Mohamed Ahmed Abd El-Razek Shamekh, Norio Tokuda, Takao Inokuma
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
Kohei Hamaya, Yuichiro Ando, Taizoh Sadoh, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 18 January 2011
Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
Tomohisa Mizuno, Yoshihiko Moriyama, Tsutomu Tezuka, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2  Interfacial Layers
Yosuke Nakakita, Ryosho Nakakne, Takashi Sasada, et al,
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport
Shinichi Takagi, Mitsuru Takenaka
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density
Hisashi Saito, Yutaka Matsumoto, Yasuyuki Miyamoto, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime
Yasuhisa Omura
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Pinch-Off Voltage Lowering in Polycrystalline Silicon Thin-Film Transistors
Hiroyuki Ikeda, Nobuyuki Sano
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel–Kramers–Brillouin with Density Gradient Method
SeongWook Choi, Chang-Ki Baek, Sooyoung Park, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 1R , published: 18 January 2011
Study of the Characteristics of Organic Thin Film Transistors with Plasma-Polymer Gate Dielectrics
Sang-Jin Cho, In-Seob Bae, Young Gug. Seol, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO3 Insulator
Hu Yan, Hiroki Hanagata, Toshihiko Jo, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode
Tomohiko Yamakami, Shinichiro Suzuki, Mitsunori Henmi, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution
Afishah Alias, Kouta Hazawa, Nobuaki Kawashima, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Нестационарное межзонное поглощение света квантовыми точками: невырожденный случай спектроскопии накачка – зондирование
М. Ю. Леонов, А. В. Баранов, А. В. Федоров
Оптика и спектроскопия, Vol: 110, No: 1 , published: 13 January 2011
Нелинейная дифракция в неоднородной сверхрешетке
М. Б. Белоненко, Э. Г. Федоров
Оптика и спектроскопия, Vol: 110, No: 1 , published: 13 January 2011
Atomic Structure, Energetics, and Dynamics of Topological Solitons in Indium Chains on Si(111) Surfaces
Hui Zhang, Jin-Ho Choi, Yang Xu, Xiuxia Wang, Xiaofang Zhai, Bing Wang, Changgan Zeng, Jun-Hyung Cho, Zhenyu Zhang, and J. G. Hou
Phys. Rev. Lett., Vol: 106, No: 2 , published: 13 January 2011
Electronic structure study of ion-implanted Si quantum dots in a SiO2 matrix: Analysis of quantum confinement theories
E. G. Barbagiovanni, L. V. Goncharova, and P. J. Simpson
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 13 January 2011
I-V characteristics of an open quantum dot with a Coulomb interaction: Extension of the Landauer formula with exact scattering eigenstates
Akinori Nishino, Takashi Imamura, and Naomichi Hatano
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 13 January 2011
Electronic correlations in short-period (CrAs)n/(GaAs)n ferromagnetic heterostructures
L. Chioncel, I. Leonov, H. Allmaier, F. Beiuşeanu, E. Arrigoni, T. Jurcuţ, and W. Pötz
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 13 January 2011
Capacitive interaction model for Aharonov-Bohm effects of a quantum Hall antidot
W.-R. Lee and H.-S. Sim
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 13 January 2011
Tunable Quantum Dot Arrays Formed from Self-Assembled Metal-Organic Networks
F. Klappenberger, D. Kühne, W. Krenner, I. Silanes, A. Arnau, F. J. García de Abajo, S. Klyatskaya, M. Ruben, and J. V. Barth
Phys. Rev. Lett., Vol: 106, No: 2 , published: 13 January 2011
Optical precursors with tunneling-induced transparency in asymmetric quantum wells
Yandong Peng, Yueping Niu, Yihong Qi, Haifeng Yao, and Shangqing Gong
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 83, No: 1 , published: 12 January 2011
Ab-initio study of Al1–xGaxSb compound
Devi Nisha, Sharma Sonu, Verma Udai Pratap
Z. Kristallogr., Vol: 226, No: 1 , published: 11 January 2011
Synthesis, crystal structure, electrical and thermal transport properties of the skutterudite-derivative RhGe[1.5–x]Se[1.5+x]
Liang Ying, Schnelle Walter, Oeschler Niels, et al.
Z. Kristallogr., Vol: 226, No: 1 , published: 11 January 2011
Exciton lifetimes of CdTe nanocrystal quantum dots in high magnetic fields
J. H. Blokland, V. I. Claessen, F. J. P. Wijnen, E. Groeneveld, C. de Mello Donegá, D. Vanmaekelbergh, A. Meijerink, J. C. Maan, and P. C. M. Christianen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 11 January 2011
Single-shot initialization of electron spin in a quantum dot using a short optical pulse
Vivien Loo, Loïc Lanco, Olivier Krebs, Pascale Senellart, and Paul Voisin
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 10 January 2011
Direct Measurement of the Hole-Nuclear Spin Interaction in Single InP/GaInP Quantum Dots Using Photoluminescence Spectroscopy
E. A. Chekhovich, A. B. Krysa, M. S. Skolnick, and A. I. Tartakovskii
Phys. Rev. Lett., Vol: 106, No: 2 , published: 10 January 2011
Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs
Tan L.J.J., Wai Mun Soong, David J.P.R., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation
Harvard E., Brown R., Shealy J.R.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Jungwoo Joh, del Alamo J.A.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Ghandi, R. Buono, B. Domeij, M., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs
Keng-Ming Liu, Register L.F. Banerjee S.K.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs
Akhavan N.D., Afzalian A., Chi-Woo Lee at al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich Al2O3/p-Si Diodes
Zhen Liu, Chen T.P., Yang Liu, at al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
Wei-Han Lee, Ming-Jer Chen
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Large-Signal Model for Independent DG MOSFET
Thakur P.K., Mahapatra S.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
Kuzum D., Krishnamohan T., Nainani A., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process
Peng J.W., Singh N., Lo G.Q., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Interface-Trap Effects in Inversion-Type Enhancement-Mode InGaAs/ZrO2 N-Channel MOSFETs
Morassi L., Padovani A., Verzellesi G., et al.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate
Hock Jin Quah, Kuan Yew Cheong, Hassan Z., Lockman Z.
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability
Steighner J.B., Jiann-Shiun Yuan, Yidong Liu
IEEE Trans. Electron Devices , Vol: 58, No: 1 , published: 06 January 2011
Electronic structure and optical properties of Hf[x]Ti[1_-x]O[2] calculated from first principles
Duan Guo-Yu/Song Si-Chao/Wei Chang-Dong/et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 29, No: 4 , published: 28 December 2010
Кинетические свойства и зонные параметры кристаллов Hg[1_-x]Mn[x]S
Марьянчук П.Д./Андрущак Г.О.
Изв. вузов. Физ., Vol: 53, No: 4 , published: 27 December 2010
Выращивание и оптические параметры кристаллов GaSe:Te
Саркисов С.Ю./Атучин В.В./Гаврилова Т.А./и др.
Изв. вузов. Физ., Vol: 53, No: 4 , published: 27 December 2010
Об одной возможности математического моделирования зависимости интенсивности катодолюминесценции от энергии электронов пучка при идентификации параметров полупроводниковых материалов с использованием аппроксимации степенными рядами
Ковтунова Т.И./Михеев Н.Н./Поляков А.Н./Степович М.А.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2010, No: 9 , published: 27 December 2010
Обобщенная теория токопереноса в низкобарьерных диодах Мотта с приповерхностным дельта-легированием: сопоставление с экспериментом
Шашкин В.И./Мурель А.В.
Микроэлектроника, Vol: 39, No: 5 , published: 27 December 2010
Магнитоконцентрационный эффект на базовом pn-переходе биполярного магнитотранзистора
Тихонов Р.Д.
Микроэлектроника, Vol: 39, No: 5 , published: 27 December 2010
Резонансно-туннельный диод на основе гетеросистемы GaAs/AlAs для субгармонического смесителя
Алкеев Н.В./Аверин С.В./Дорофеев А.А./и др.
Микроэлектроника, Vol: 39, No: 5 , published: 27 December 2010
Перестройка параметров табличных моделей субмикронных МОП-транзисторов
Денисенко В.В.
Микроэлектроника, Vol: 39, No: 5 , published: 27 December 2010
Особенности вольт-амперных характеристик и температурные зависимости электропроводности слоев пористого кремния
Сорокин Л.М., Соколов В.И., Калмыков А.Е., et al.
Письма в ЖТФ, Vol: 36, No: 24 , published: 26 December 2010
Расчет потенциала и электронной плотности для напряженной полупроводниковой квантовой точки
Пелещак Р.М., Бачинский И.Я., Зегря Г.Г.
Письма в ЖТФ, Vol: 36, No: 24 , published: 26 December 2010
Фазовый синхронизм для генерации второй гармоники в кристаллах GaSe
Чу Л. -Л., Жанг И.Ф., Кан Ж.-Х, et al.
Изв. вузов. Физ., Vol: 53, No: 12 , published: 23 December 2010
Механизмы переноса заряда и магнетосопротивления в CuInSe2
Матиев А.Х./Георгобиани А.Н./Кодин В.В./Матиев М.А.
Изв. РАН. Сер. физ., Vol: 74, No: 9 , published: 21 December 2010
Влияние дипольных структур на полевую эмиссию широкозонных полупроводниковых катодов
Баскин Л.М., Нейттаанмяки П., Пламеневский Б.А.
Ж. техн. физ., Vol: 80, No: 12 , published: 17 December 2010
Debue temperature and melting point of II-VI and III-V semiconductors
Kumar V./Jha V./Shrivastava A.K.
Cryst. Res. Technol., Vol: 45, No: 9 , published: 16 December 2010
Investigation of carrier scattering mechanisms in molybdenum diselenide single crystals by hall effect measurements
Sumesh C.K./Patel K.D./Pathak V.M./Srivastav R.
Cryst. Res. Technol., Vol: 45, No: 9 , published: 16 December 2010
Exploiting the optical quardratic nolinearity of zinc-blende semiconductors for guided-wave terahertz generation: a material comparison
Cherchi M./Taormina A./Busacca A.C./et al.
IEEE J. Quantum Electron. , Vol: 46, No: 3 , published: 16 December 2010
Tb/s optical logic gates based on quantum-dot semiconductor optical amplifiers
Rostami A./Nejad H.B.A./Qartavol R.M./Saghai H.R.
IEEE J. Quantum Electron. , Vol: 46, No: 3 , published: 16 December 2010
Numerical simulation of temporal and spectral variation of gain and phase recovery in quantum-dot semiconductor optical amplifiers
Kim J./Meuer C./Bimberg D./Eisenstein G.
IEEE J. Quantum Electron. , Vol: 46, No: 3 , published: 16 December 2010
Characterization of ZnO nanorods grown on Si substrates coated with NiCl2
Wang Jie/Zhuang Huizhao/Li Junlin/Xu Peng
Cryst. Res. Technol., Vol: 45, No: 9 , published: 16 December 2010
Preparation and photoluminescence properties of AuSix (x=1/2, 1/7) nanoparticles
Huang Lijuan/Wang Lei/Du Jun
Acta opt. sin=Guangxue xuebao , Vol: 30, No: 8 , published: 16 December 2010
Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting diode with a low indium content InGaN shallow step
Kuo C.-H./Fu Y.K./Chi G.C./Chang S.-J.
IEEE J. Quantum Electron. , Vol: 46, No: 3 , published: 16 December 2010
Tunneling Hall Effect
P. S. Alekseev
Письма в ЖЭТФ, Vol: 92, No: 12 , published: 14 December 2010
Поглощение терагерцового излучения в гетероструктурах Ge/Si(001) с квантовыми точками
Е. С. Жукова, Б. П. Горшунов, В. А. Юрьев, et al.
Письма в ЖЭТФ, Vol: 92, No: 12 , published: 14 December 2010
Гальваномагнитные, термоэлектрические свойства и электронное строение монокристаллических BiTeBr и BiTeI
Кульбачинский В.А., Кытин В.Г., Лаврухина З.В., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Особенности примесных состояний ванадия в теллуриде свинца
Артамкин А.И., Добровольский А.А., Винокуров А.А., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Особенности фотоэлектрических свойств слоистых пленок аморфного гидрированного кремния
Курова И.А., Ормонт Н.Н.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Оптическая анизотропия InAs квантовых точек
Блохин С.А., Надточий А.М., Красивичев А.А., et al.
Письма в ЖТФ, Vol: 36, No: 23 , published: 12 December 2010
Увеличение эффективности вывода излучения тонкопленочных фотолюминесцентных композитных структур на основе PbSe
Анисимова Н.П., Тропина Н.Э., Тропин А.Н.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Исследование туннельного транспорта носителей в структурах с активной областью InGaN/GaN
Сизов В.С., Неплох В.В., Цацульников А.Ф., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Свободные люминесцирующие слои пористого кремния
Горячев Д.Н., Беляков Л.В., Сресели О.М.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Фотолюминесценция эпитаксиальных слоев CdHgTe, выращенных на подложках Si
Мынбаев К.Д., Баженов Н.Л., Иванов-Омский В.И., et al.
Письма в ЖТФ, Vol: 36, No: 23 , published: 12 December 2010
Фотолюминесценция наногетероструктур на основе CdHgTe
Мынбаев К.Д., Баженов Н.Л., Иванов-Омский В.И., et al.
Письма в ЖТФ, Vol: 36, No: 23 , published: 12 December 2010
Электролюминесценция на длине волны 1.5 мкм в диодных структурах Si : Er/Si, легированных акцепторами Al, Ga, B
Кузнецов В.П., Шмагин В.Б., Марычев М.О., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Радиационные эффекты и межфазные взаимодействия в омических и барьерных контактах к фосфиду индия, стимулированные быстрыми термическими обработками и облучением gamma -квантами 60Co
Беляев А.Е., Болтовец Н.С., Бобыль А.В., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Антистоксово излучение экситонов в тетраэдрическом наноуглероде
Мащенко В.Е./Пузиков В.М./Семенов А.В./Яминский И.В.
Докл. РАН, Vol: 432, No: 1 , published: 10 December 2010
Study on microwave cyclotron resonance of high-mobility GaAs/Al[0.35]Ga[0.65]As two-dimensional electron gas
Yang Wei/Luo Hai-Hui/Qian Xuan/Ji Yang
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 29, No: 2 , published: 10 December 2010
Wavelength extended InGaAs/InP photodetector structures with lattice mismatch up to 2.6%
Gu Yi/Li Cheng/Wang Kai/et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 29, No: 2 , published: 10 December 2010
Кремниевая наноэлектроника: проблемы и перспективы
Валиев К.А./Вьюрков В.В./Орликовский А.А.
Успехи соврем. радиоэлектрон., Vol: 2010, No: 6,ч.2 , published: 10 December 2010
Приборы наноэлектроники
Щука А.А.
Успехи соврем. радиоэлектрон., Vol: 2010, No: 6,ч.2 , published: 10 December 2010
Низкопороговое антистоксово преобразование частоты в микрокристаллах твердых растворов Zn[0.6[Cd[0.4]S с адсорбированными металлоорганическими нанокластерами
Овчинников О.В./Смирнов М.С./Латышев А.Н./и др.
Квант. электрон., Vol: 40, No: 6 , published: 10 December 2010
Матричный метод для моделирования туннельного переноса
Федирко В.А./Поляков С.В./Зенюк Д.А.
Мат. моделир., Vol: 22, No: 5 , published: 10 December 2010
Токовые неустойчивости в резонансно-туннельных диодах
Попов В.Г.
Успехи соврем. радиоэлектрон., Vol: 2010, No: 6,ч.2 , published: 10 December 2010
Quantum Coherence in a One-Electron Semiconductor Charge Qubit
K. D. Petersson, J. R. Petta, H. Lu, and A. C. Gossard
Phys. Rev. Lett., Vol: 105, No: 24 , published: 08 December 2010
Zero-Bias Anomalies in Narrow Tunnel Junctions in the Quantum Hall Regime
P. Jiang, C.-C. Chien, I. Yang, W. Kang, K. W. Baldwin, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett., Vol: 105, No: 24 , published: 07 December 2010
Two-Dimensional Optical Control of Electron Spin Orientation by Linearly Polarized Light in InGaAs
K. Schmalbuch, S. Göbbels, Ph. Schäfers, Ch. Rodenbücher, P. Schlammes, Th. Schäpers, M. Lepsa, G. Güntherodt, and B. Beschoten
Phys. Rev. Lett., Vol: 105, No: 24 , published: 07 December 2010
Observation of a Cyclotron Harmonic Spike in Microwave-Induced Resistances in Ultraclean GaAs/AlGaAs Quantum Wells
Yanhua Dai, R. R. Du, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett., Vol: 105, No: 24 , published: 07 December 2010
Structural, elastic, electronic and lattice dynamic properties of GaPxAsySb1−x−y alloys lattice matched to different substrates
B. Ghebouli, M. A. Ghebouli, M. Fatmi
Fizika. A, Vol: 19, No: 4 , published: 04 December 2010
Воздействие поверхностных дефектов на излучательную межзонную рекомбинацию в нанокристаллах кремния,сильнолегированных водородоподобными примесями
Беляков В.А./Бурдов В.А./Сидоренко К.В.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2010, No: 12 , published: 04 December 2010
Electronic and optical properties of the doped TiO[2] system
Zhao Wei/Wang Mei/Su Xiyu/et al.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
Band Gap and Electronic Structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film
Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley
Phys. Rev. Lett., Vol: 105, No: 23 , published: 03 December 2010
Residual imprutities and electrical properties of undoped LEC InAs single crystals
Hu Weijie/Zhao Youwen/Sun Wenrong/et al.
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
Pressure influence on bound polarons in a strained wurtzite GaN/Al[x]Ga[1_-x]N heterojunction under an electric field
Zhang Min/Ban Shiliang
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
Properties of the ITO layer in a novel red light-emitting diode
Zhang Yonghui/Guo Weiling/Gao Wei/et al.
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
P-type ZnO thin films prepared by in situ oxidation of DC sputtered ZnN[2]:Ga
Zhang Jun/Xue Shuwen/Shao Lexi
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
Optical and structural properties of sol_-gel derived nanostructured CeO[2] film
Ansari Anees A.
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
AlGaN/GaN double-channel HEMT
Quan Si/Hao Yue/Ma Xiaohua/et al.
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
The microwave large signal load line of an InGaP HBT
Zhao Lixin/Jin Zhi/Liu Xinyu
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
A new small-signal model for asymmetrical AlGaN/GaN HEMTs
Ma Geng/Hao Yue/Chen Chi/Ma Xiaohua
J. Semicond., Vol: 31, No: 6 , published: 03 December 2010
120-nm gate-length In[0.7]Ga[0.3]As/In[0.52]Al[0.48]As InP-based HEMT
Huang Jie/Guo Tianyi/Zhang Haiying/et al.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
Time-delayed feedback control of chaons in a GaA/AlGaAs heterostructure
Yang Gui/Zhao Xueting
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
Wang Dongfang/Yuan Tingting/Wei Ke/et al.
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
Tunable spin-diode with a quantum dot coupled to leads
Chi Feng/Li Yan/Sun Lianliang
J. Semicond., Vol: 31, No: 6 , published: 03 December 2010
Properties of the two- and three-dimensional quantum dot qubit
Chen Shihua
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
Gao Hanchao/Wen Cai/Wang Wenxin/et al.
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
Ti/WSi/Ni ohmic contact to n-type SiCN
Cheng Wejuan/Qian Yanni/Ma Xueming
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes
Yeganeh M.A./Rahmatollahpur S.H.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
A revused approach to Schottky parameter extraction for GaN HEMT
Wang Xinhua/Zhao Miao/Liu Xinyu/et al.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
Влияние электронного облучения,ослабленноо алюминиевыми экранами,кремниевых p-n -структур
Марченко И.Г./Жданович Н.Е.
Письма в ЖТФ, Vol: 36, No: 10 , published: 03 December 2010
An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure
Pu Hongbin/Co Lin/Ren Jie/et al.
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor
Zhang Yong/Yang Jianhong/Cai Xueyuan/Wang Zaixing
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy
Xi Xiaowen/Chai Changchun/Ren Xingrong/et al.
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
A new SOI high voltage device based on E-SIMOX substrate
Wu Lijuan/Hu Shengdong/Zhang Bo/Li Zhaoji
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
The bipolar field-effect transistors. VIII. Longitudinal graident of longitudinal electric field (Two-MOS-Gates on pure-base)
Jie Binbin/Sah Chihtang
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse
Xi Xiaowen/Chai Changchun/Ren Xingrong/et al.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
CuPc based organic-inorganic hetero-junction with Au electrodes
Ahmad Zubair/Sayyad Muhammad H./Karimov Kh.S.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
Low-field mobility and carrier transport mechnaism transition in nanosclae MOSFETs
Liu Hongwei/Wang Runsheng/Huang Ru/Zhang Xing
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
Total ionizing dose effects and annealing behavior for domestic VDMOS devices
Gao Bo/Yu Xuefeng/Ren Diyuan/et al.
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET
Sun Lingling/L~:u Binyi/Liu Jun/Chen Lei
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
A novel SOI MOSFET electrostatic field sensor
Chen Xin'an/Huang Qing'an
J. Semicond., Vol: 3, No: 4 , published: 03 December 2010
Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution form accumulation to strong inversion region
He Jin/Zheng Rui/Zhang Lining/et al.
J. Semicond., Vol: 31, No: 6 , published: 03 December 2010
Hot carrier effects of SOI NMOS
Chen Jianjun/Chen Shuming/Liang Bi/et al.
J. Semicond., Vol: 31, No: 7 , published: 03 December 2010
Dose-rate effects of p-chanel metal oxide semiconductor field-effect transistors at various biasing conditions
Lan Bo/Guo Qi/Sun Jing/et al.
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
Phase Stability and Electronic Structure of In-Free Photovoltaic Materials: Cu2ZnSiSe4, Cu2ZnGeSe4, and Cu2ZnSnSe4
Satoshi Nakamura, Tsuyoshi Maeda, Takahiro Wada
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Влияние примесей 4d-металлов на структурные, электронные свойства и стабильность гексагонального WC по данным FLAPW-GGA-расчетов
Суетин Д.В.,Шеин И.Р.,Ивановский А.Л. et al.
Физ. тверд. тела, Vol: 52, No: 12 , published: 01 December 2010
Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Диэлектрические свойства кристаллов ZnSe, выращенных из расплава
Чугай О.Н.,Герасименко А.С.,Комарь В.К. et al.
Физ. тверд. тела, Vol: 52, No: 12 , published: 01 December 2010
Effects of Hydrogen Doping on the Electrical Properties of Zinc–Tin–Oxide Thin Films
Hye-Ri Kim, Dong-Ho Kim, Eungsun Byon et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Effect of Ga Doping on Transparent and Conductive Al-Doped ZnO Films Prepared Using Magnetron Cosputtering
Dong-Won Kang, Sun-Jae Kim, Tae-Ho Moon et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Study of Carrier Behavior in Pentacene in a Au/Pentacene/Ferroelectric Poly(vinylidene fluoride–trifluoroethylene)/Indium Tin Oxide Structure by Electric-Field-Induced Second-Harmonic Generation Measurement
Jun Li, Le Zhang, Wei Ou-Yang, Dai Taguchi, Takaaki Manaka, and Mitsumasa Iwamoto
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices
Antonella Parisini, Carlo Ghezzi, Luciano Tarricone et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Manipulating and Imaging the Shape of an Electronic Wave Function by Magnetotunneling Spectroscopy
A. Patanè, N. Mori, O. Makarovsky, L. Eaves, M. L. Zambrano, J. C. Arce, L. Dickinson, and D. K. Maude
Phys. Rev. Lett., Vol: 105, No: 23 , published: 01 December 2010
Coherent Control of Terahertz Wave from Coherent Longitudinal Optical Phonon in a GaAs/AlAs Multiple-Quantum-Well Structure
Kohji Mizoguchi, Yusuke Kanzawa, Goro Oohata et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Exciton Luminescence Dynamics in ZnO Crystal Observed under One- and Two-Photon Excitation
Sekika Yamamoto, Hikari Sakuma, Tomobumi Mishina
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks
Shiyang Zhu, Shinya Takeue, Anri Nakajima
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack
Cong Li, Yi-Qi Zhuang, Ru Han
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing
Jong-Bong Ha, Dong-Seok Kim, Ki-Sik Im et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with (110) Channel on Si(100)
Tadashi Yamaguchi, Keiichiro Kashihara, Shuichi Kudo et al.
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Thermal noise in MOSFETs: a two- or a three-parameter noise model?
Emam M./Sakalas P./Vahoenacker-Janvier D./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices
Lavizzari S./Sharma D./Ielmini D.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Physics-based analysis and simulation of 1/f noise in MOSFETs under large-signal operation
Hong S.-M./Park C.H./Park Y.J./Min H.S.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
A simulation study of the punch-through-assisted hot hole injection mechanism for nonvolatile memory cells
Ielina M./Palestri P./Akil N./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Propagating Wave Packets and Quantized Currents in Coherently Driven Polariton Superfluids
M. H. Szymańska, F. M. Marchetti, and D. Sanvitto
Phys. Rev. Lett., Vol: 105, No: 23 , published: 30 November 2010
AlN passivation over AlGaN/GaN HFETs for surface heat spreading
Tsurumi N./Ueno H./Murata T./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
RF characterization of Schottky diodes in 65-nm CMOS
Matters-Kammerer M.K./Tripodi L./van Langevelde R./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Dopant-segregated Schottky junction tuning with fluorine pre-silicidation ion implant
Vega R.A./Liu T.-J.K.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Universal tunnel mass and charge trapping in [(SiO2)1-x(Si3N4)x]1-ySiy  film
Watanabe H./Matsushita D./Muraoka K./Kato K.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach
Jingu Y./Hirama K./Kawarada H.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Silane and ammonia surface passivation technology for high-mobility In0.53Ga0.47As MOSFETs
Chin H.-C./Liu X./Gong X./Yeo Y.-C.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Analysis of contact effects in iverted-staggered organic thin-film transistors based on anisotropic conduction
Sohn C.-W./Rim T.-U./Choi G.-B./Jeong Y.-H.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Bias-stress effect in pentacene organic thin-film transistors
Ryu K.K./Nausieda I./He D.D./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors
Kim Y.-H./Han M.-K./Han J.-I./Park S.K.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
A empirical defect-related photo leadkage current model for LTPS TFTs based on the unit lux current
Tai Y.-H./Kuo Y.-F./Sun G.-P.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Uniaxial stress engineering for high-performance Ce NMOSFETs
Kobayashi M./Irisawa T./Magyari-K~:ope B./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
A physical model for fringe capacitance in double-gate MOSFETs with non-abrupt source/drain junctions and gate underlap
Agrawal S./Fossum J.G.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Parameter extraction of short-channel a-Si:H TFT including self-heating effect and drain current nonsaturation
Tang Z./Parks M.-S./Jin S.H./Wie C.R.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Simulation of quantum current oscilaltions in trigate SOI MOSFETs
Akhavan N.D./Afzalian A./Lee C.-W./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Reduction of TRS noise in small-area MOSFETs under switched bias conditions and forward substrate bias
Zanolla N./Siprak D./Tiebout M./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 5 , published: 30 November 2010
Влияние γ-облучения на параметры локализованных состояний в монокристаллах p-InSe и n-InSe
Мустафаева С.Н./Асадов М.М./Исмайлов А.А.
Физ. низ. температур, Vol: 36, No: 7 , published: 29 November 2010
Optical and sensitive properties of nanostructured silicon irradiated with high-energy particles (protons, _a-particles, and heavy ions)
Dmitruk N.L./Kondratenko O.S./Pinkovska M.B./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Investigation of the role of negatively charged impurity centers in formation of inverse distribution of photoelectron. The kinetics equation and formation of the inverse distribution function
Khizanishvili Esma/Kachlishvili Zaur/Khizanishvili Marina/Gigauri Maia
Bull. Georg. Nat. Acad. Sci., Vol: 4, No: 1 , published: 29 November 2010
Quasitationary electron states and the conductivity of a symmetric three-barrier resonant tunnel structure
Tkach M.V./Seti Yu.O.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Effect of _g-irradiation on the photoluminescence of Cd[1_-x]Zn[x]Te
Glinchuk K.D./Litovschenko N.M./Naseka Yu.M./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Formation of nano-structured CdSe composites in porous SiO[x] layers
Bachrikov Yu.Yu./Indutnyui I.Z./Maidanchuk I.Yu./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Temperature dependence of the photoluminescence of CdTc quantum dots in a polymer matrix
Korbutyak D.V./Kalytchuk S.M./Khalavka Yu.B./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Особенности электронного строения кристаллов Ga2AsSb
Басалаев Ю.М.
Изв. вузов. Физ., Vol: 53, No: 11 , published: 28 November 2010
Основные параметры щелевой линии, используемой для возбуждения волн геликонового типа
Корнейчук С.А., Конюшко С.В.
Изв. вузов. Физ., Vol: 53, No: 11 , published: 28 November 2010
Carrier density dependence of optical band gap and work function in Sn-doped In[2]O[3] films
Sato Yasushi/Ashida Toru/Oka Nobutao/Shigesato Yuzo
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Взаимодействие поверхностных плазмонов с потоками заряженных частиц, проходящих через границу раздела сред
Белецкий Н.Н./Ханкина С.И./Яковенко В.М./Яковенко И.В.
Ж. техн. физ., Vol: 80, No: 4 , published: 26 November 2010
Nitrogen related electron trap with high capture cross section in n-type GaAsN grown by chemical beam epitaxy
Bouzazi Boussairi/Suzuki Hidetoshi/Kojima Nobuaki/et al.
Appl. Phys. Express, Vol: 3, No: 5 , published: 26 November 2010
Synthesis and characterization of highly resistive epitaxial indium-doped SnO[2]
White Mark E./Bierwagen Oliver/Tsai Min-Ying/Speck James S.
Appl. Phys. Express, Vol: 3, No: 5 , published: 26 November 2010
High mobility exceeding 80 cm{2}V{_-1}s{_-1} in polycrystalline Ta-doped SnO[2] thin films on glass using anatase TiO[2] seed layers
Nakao Shoichiro/Yamada Naoomi/Hitosugi Taro/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
High-quality p-type ZnO films grown by Co-doping of N and Te on Zn-face ZnO substrates
Park Seunghwan/Minegishi Tsutomu/Oh Dongcheol/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Выращивание монокристаллов CdP[2] тетрагональной модификации и свойства барьеров на их основе
Рудь В.Ю./Рудь Ю.В./Боднарь И.В.
Ж. техн. физ., Vol: 80, No: 4 , published: 26 November 2010
Two-hoton control of biexciton population in telecommunication-band quantum dot
Miyazawa Toshiyuki/Kodera Tetsuo/Nakaotka Toshihiro/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Novel vertical heterojunction field-effect transistors with Re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates
Okada Masaya/Saitoh Yu/Yokoyama Mitsunori/et al.
Appl. Phys. Express, Vol: 3, No: 5 , published: 26 November 2010
Improvement in output power of 280nm deep ultraviolet light-emitting diode by using AlGaN multi quantum wells
Fujioka Akira/Misaki Takao/Murayama Takashi/et al.
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
Fabrication of single-electron transistor composed of a self-assembled quantum dot and nanogap electrode by atomic force microscope local oxidation
Moriya Rai/Kobayashi Hiroyuki/Shibata Kenji/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Hybrid laser activation of highly concentrated Bi donors in wire-_d-doped silicon
Murata Koichi/Yasutake Yuhsuke/Nittoh Koh-ichi/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Self-assembly of symmetric GaAs quantum dots on (11)A substrates: suppression of fine-structure splitting
Mano Takaaki/Abbarchi Marco/Kuroda Takashi/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Unstrained GaAs quantum dashes grown on GaAs(001) substrates by droplet epitaxy
Jo Masafumi/Mano Takaaki/Sakoda Kazuaki
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
Atom-resolved luminescence of Si(111)-7_*7 induced by scanning tunneling microscopy
Imada Hiroshi/Ohta Masashi/Yamauto Naoki
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
Inter-dot distance dependence of photoluminescence properties in CdSe quantum dot systems
Tai Kohei/L~:u Wei/Umezu Ikurou/Sugimura Akira
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers
Shimomoto Kazuma/Kobayashi Atsushi/Ueno Kohei/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
An AlN sacritficial buffer layer inserted into the GaN/patterned sapphire substrate for a chemical lift-off process
Lin Chia-Feng/Dai Jing-Jie/Lin Ming-Shiou/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer
Hirayama Hideki/Tsukada Yusuke/Maeda Tetsutoshi/Kamata Norihiko
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes
Fischer Alec M./Sun Kewei W./Juday Reid/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
222 nm deep-ultraviolet AlGaN quantum well light-emitting diode with vertical emission properties
Hirayama Hideki/Noguchi Norimichi/Kamata Norihiko
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy
Yang Zheng/Chu Sheng/Chen Winnie V./et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
High power blue-violet superluminescent light emitting diodes with InGaN quantum wells
Rossetti Marco/Dorsaz Julien/Rezzonico Raffaele/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Nonpolar 4H-polytype AlN/AlGaN multiple quantum well structure grown on 4H-SiC(1~-100)
Horita Masahiro/Kimoto Tsunenobu/Suda Jun
Appl. Phys. Express, Vol: 3, No: 5 , published: 26 November 2010
Electron emission from a diamond (11) p_-i_-n* junction diode with negative electron affinity during room temperatrue operation
Takeuchi Daisuke/Makino Toshiharu/Kato Hiromitsu/et al.
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
Air-annealing effects for Pt-Ti gate Si-metal_-oxide_-semiconductor field-effect transistors hydrogen gas sensor
Usagawa Toshiyuki/Kikuchi Yota
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
High-performance P-channel diamond metal_-oxide_-semiconductor field-effect transistors on H-terminated (111) surface
Hirama Kazuyuki/Tsuge Kyosuke/Sato Syunsuke/et al.
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
High performance ultrathin (110)-oriented Ge-on-insulator p-channel metal_-oxide_-semiconductor fiel-effect transistors fabricated by Ge condensation technique
Dissanayake Sanjeewa/Tomiyama Kentaro/Sugahara Satoshi/et al.
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
High electron mobility Ge n-channel metal_-insulator_-semiconductor field-effect transistors fabricated by the gate-last process with the solid source diffusion technique
Maeda Tatsuro/Morita Yukinori/Takagi Shinichi
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Competition between Charge-Transfer Exciton Dissociation and Direct Photocarrier Generation in Molecular Donor-Acceptor Compounds
Jun’ya Tsutsumi (堤潤也), Toshikazu Yamada (山田寿一), Hiroyuki Matsui (�井弘之), Simon Haas, and Tatsuo Hasegawa (長谷��生)
Phys. Rev. Lett., Vol: 105, No: 22 , published: 24 November 2010
Energy Relaxation and Thermalization of Hot Electrons in Quantum Wires
Torsten Karzig, Leonid I. Glazman, and Felix von Oppen
Phys. Rev. Lett., Vol: 105, No: 22 , published: 24 November 2010
Multifold Enhancement of Quantum Dot Luminescence in Plasmonic Metamaterials
K. Tanaka, E. Plum, J. Y. Ou, T. Uchino, and N. I. Zheludev
Phys. Rev. Lett., Vol: 105, No: 22 , published: 24 November 2010
Giant Piezoresistance Effects in Silicon Nanowires and Microwires
J. S. Milne, A. C. H. Rowe, S. Arscott, and Ch. Renner
Phys. Rev. Lett., Vol: 105, No: 22 , published: 23 November 2010
How to Find Conductance Tensors of Quantum Multiwire Junctions through Static Calculations: Application to an Interacting Y Junction
Armin Rahmani, Chang-Yu Hou, Adrian Feiguin, Claudio Chamon, and Ian Affleck
Phys. Rev. Lett., Vol: 105, No: 22 , published: 23 November 2010
Теория прыжкового переноса в неупорядоченных системах
Фатеев М.П.
Физ. тверд. тела, Vol: 52, No: 6 , published: 22 November 2010
Correlation Between Measured Minority-Carrier Lifetime and Cu(In, Ga)Se2 Device Performance
Repins I.L., Metzger W.K., Perkins C.L., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Флуктуации интенсивности излучения экситонного Бозе-конденсата в двойных квантовых ямах GaAs/Al[0.33]Ga[0.67]As
Кузьмин Р.В./Криволапчук В.В./Москаленко Е.С./Мездрогина М.М.
Физ. тверд. тела, Vol: 52, No: 6 , published: 22 November 2010
Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films
Sekhar Chandra Ray\Sarit Kumar Ghosh\Zivayi Chiguvare\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Large Enhancement of Field Emission from ZnO Nanocone Arrays via Patterning Process
Ee Le Shim\Joonho Bae\Eunji Yoo\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
Clemens Ostermaier\Gianmauro Pozzovivo\Bernhard Basnar\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors
Yi-Che Lee, Yun Zhang, Hee-Jin Kim, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Reduction of Turn-on, Knee, and Offset Voltages of InAlGaP/GaAs HBTs Using δ-Doping in the InAlGaP Emitter
Yu-Shyan Lin, Jia-Jhen Jiang
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low Ron × A
Bahat-Treidel E., Brunner F., Hilt O., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Time Dependent Electric Fields Generated DC Currents in a Large Gate-Defined Open Dot
Kai-Ming Liu\Vladimir Umansky\ Shih-Ying Hsu
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Calculation of the Electronic State in Electronic Current for Nanowire Models
Masato Senami\Yuji Ikeda\Akinori Fukushima\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Electronic Properties and Orientation-Dependent Performance of InAs Nanowire Transistors
Alam K., Sajjad R.N.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Nearly Universal 1/f2  Spectrum of Mobility Fluctuation Noise in a Quantum Wire at Radio and Microwave Frequencies
Agnihotri P., Bandyopadhyay S.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation
Hyunsung Kim\ Dong-Soo Shin\Han-Youl Ryu\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
A Tight Binding Method Study of Optimized Si-SiO2 System
Watanabe H., Kawabata K., Ichikawa T.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers
Toshihiro Kugimiya\Hiroshi Goto\Hiroyuki Okuno\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
An Analytical Expression for Charge Collection Probability From Within a U-Shaped Junction Well
Chee Chin Tan, Ong V.K.S.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)
Oehme M. Sarlija M. Hahnel D., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts
Ryosho Nakane\Tomoyuki Harada\Kuniaki Sugiura\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Investigation of Field Concentration Effects in Arch Gate Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
Jung Hoon Lee\Gil Sung Lee\ Seongjae Cho\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Chorng-Jye Sheu
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Understanding LER-Induced MOSFET VT Variability—Part II: Reconstructing the Distribution
Reid D., Millar C. Roy, S., Asenov A.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Understanding LER-Induced MOSFET VT Variability—Part I: Three-Dimensional Simulation of Large Statistical Samples
Reid D., Millar C., Roy S., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Characterization of Inversion-Layer Capacitance of Electrons in High- k /Metal Gate Stacks
Iijima R., Edge L.F. Paruchuri V., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Thermal Circuit for SOI MOSFET Structure Accounting for Nonisothermal Effects
Kun Zhang, Ming-C Cheng M.-C.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs
Tao Yu, Runsheng Wang, Ru Huang, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Layout Variation Effects in Advanced MOSFETs: STI-Induced Embedded SiGe Strain Relaxation and Dual-Stress-Liner Boundary Proximity Effect
Youn Sung Choi, Guoda Lian, Vartuli C., et al
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Modeling and Simulation of Charge-Pumping Characteristics for LDD-MOSFET Devices With LOCOS Isolation
Tahi H., Djezzar B., Nadji B.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current
Sung-Jin Choi, Jin-Woo Han, Sungho Kim, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs
Sallese J.-M., Chevillon N., Prégaldiny F., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
An Analytical I – V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
Roldán J.B., Gamiz F., Jiménez-Molinos F., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications
Passlack M., Droopad R., Brammertz G., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited Al2O3  as a Gate Dielectric
Basu S., Singh P.K., Shun-Kuan Lin, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Numerical and Experimental Investigation on a Novel High-Voltage (  600-V) SOI LDMOS in a Self-Isolation HVIC
Xiaorong Luo, Bo Zhang, Tianfei Lei
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs
Toniutti P., Esseni D., Palestri P.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
Kuo-Liang Yeh, Jyh-Chyurn Guo
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges
Yun Seop Yu, Namki Cho, Sung Woo
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors
Hung-Chang Sun Ching-Fang Huang Yen-Ting Chen, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
Seok-Gyu Choi\Min Han\Yong-Hyun Baek\t al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
High-performance transparent conducting Ga-doped ZnO films deposited by RF magnetron sputter deposition
Kim Jun Kwan/Lee Jae Min/Lim Jung Wook/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 November 2010
Effect of Ge metal-insulator-semiconductor interfacial layers on interface trap density near the conduction band edge
Taoka Noriyuki/Mizubayashi Wataru/Morita Yukinori/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 November 2010
Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor
Hayashida Tetsuro/Endo Kazuhiko/Liu Yongxun/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 November 2010
Анизотропное магнетосопротивление и планарный эффект Холла в GaAs структуре с дельта-легированным Mn слоем
Кудрин А.В./Вихрова О.В./Данилов Ю.А.
Письма в ЖТФ, Vol: 36, No: 11 , published: 18 November 2010
Оптическое поглощение и фотопроводимость гамма-облученных кристаллов селенида цинка
Эльмуротова Д.Б./Ибрагимова Э.М.
Письма в ЖТФ, Vol: 36, No: 11 , published: 18 November 2010
Исследование спектров краевой фотолюминесценции эпитаксиальных пленок n-3C-SiC
Лебедев А.А./Абрамов П.Л./Богданова Е.В./и др.
Письма в ЖТФ, Vol: 36, No: 11 , published: 18 November 2010
Spin Rings in Bistable Planar Semiconductor Microcavities
C. Adrados, A. Amo, T. C. H. Liew, R. Hivet, R. Houdré, E. Giacobino, A. V. Kavokin, and A. Bramati
Phys. Rev. Lett., Vol: 105, No: 21 , published: 15 November 2010
Polarization Bistability and Resultant Spin Rings in Semiconductor Microcavities
D. Sarkar, S. S. Gavrilov, M. Sich, J. H. Quilter, R. A. Bradley, N. A. Gippius, K. Guda, V. D. Kulakovskii, M. S. Skolnick, and D. N. Krizhanovskii
Phys. Rev. Lett., Vol: 105, No: 21 , published: 15 November 2010
Предэкспоненциальный множитель прыжковой проводимости в разупорядоченных углеродных пленках
Катаева Е.А., Божко А.Д., Демишев С.В.
Кpатк. сообщ. по физ. ФИAН, Vol: 2010, No: 11 , published: 15 November 2010
Picosecond Carrier Lifetime in Low-Temperature-Grown GaAsSb
Yegang Lu/Sannian Song/Zhitang Song/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
High-Efficiency Blue and True-Green-Emitting Laser Diodes Bases on Non-c-Plane Oriented GaN Substrates
James W.Raring/Mathew C.Schmidt/Cristiane Poblenz/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
Phase Separation Resalting from Mg Doping in p-lnGaN Film Grown on GaN/Sapphir Template
Liven Sang/Masaki Takeguchi/Woong Lee/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
Effects of Substrate Heating on Amorphous Structure of InGaZnO Films and the Electical Properties of Their Thin Film Transistor
Mi Ran Moon/Sekwon Na/ Haseok Jeon/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
Takaaki Tsunomura/Ani Kumar/Tomoko Mizutani/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
Терагерцовая спектроскопия узкозонных гетероструктур с квантовыми ямами на основе HgTe/CdTe
А. В. Иконников, А. А. Ластовкин, К. Е. Спирин, et al.
Письма в ЖЭТФ, Vol: 92, No: 11 , published: 14 November 2010
The effects of concentration on the electronic and optical properties in Cd[x]Zn[1_-x]S ternary alloys
Korozlu N./Colakoglu K./Deligoz E.
Phys. Status Solidi B, Vol: 247, No: 5 , published: 12 November 2010
Symmetry-related motional enhancement of exciton magnetic moment
Tronc P.
Phys. Status Solidi B, Vol: 247, No: 5 , published: 12 November 2010
Defects in a nitrogen-implanted ZnO thin film
Schmidt Matthias/Ellguth Martin/Schmidt Florian/et al.
Phys. Status Solidi B, Vol: 247, No: 5 , published: 12 November 2010
Surface photovoltage of Ag nanoparticles and Au chains on Si(111)
Sell Kristian/Barke Ingo/Polei Stefan/et al.
Phys. Status Solidi B, Vol: 247, No: 5 , published: 12 November 2010
Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity
Chao-Yuan Jin, Kojima O., Inoue T., et al.
IEEE J. Quantum Electron. , Vol: 46, No: 11-12 , published: 09 November 2010
Carrier Dynamics in Tunneling Injection Quantum Dot Lasers
Gready D., Eisenstein G.
IEEE J. Quantum Electron. , Vol: 46, No: 11-12 , published: 09 November 2010
Effect of Inhomogeneous Broadening on Gain and Phase Recovery of Quantum-Dot Semiconductor Optical Amplifiers
Jungho Kim Meuer, C. Bimberg, D.
IEEE J. Quantum Electron. , Vol: 46, No: 11-12 , published: 09 November 2010
Large-Signal Response of Semiconductor Quantum-Dot Lasers
Lüdge K., Aust R., Fiol G., et al.
IEEE J. Quantum Electron. , Vol: 46, No: 11-12 , published: 09 November 2010
Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures
Hasbullah N.F., Hopkinson M., Alexander R.R., et al.
IEEE J. Quantum Electron. , Vol: 46, No: 11-12 , published: 09 November 2010
Energy Barrier Reduction and Exciton Confinement Using an Intermediate Blocking Layer in Organic Light-Emitting Diodes
Jin Woo Park\Jin Young Oh\Hyeon Seok Hwang\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 05 November 2010
Non-Quasi-Static Modeling of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
Seongjae Cho\Kyung Rok Kim\Byung-Gook Park\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 05 November 2010
Моделирование влияния поперечного электрического поля на дрейфовую скорость электронов в GaAs квантовой проволоке
Борздов А.В./Поздняков Д.В./Борздов В.М. и др.
Микроэлектроника, Vol: 39, No: 6 , published: 04 November 2010
Плазменные колебания двумерного электронного газа в полевом транизсторе с цилиндрическим затворным электродом
Арсенин А.В./Гладун А.Д./Лейман В.Г./и др.
Радиотехн. и электрон. (Россия), Vol: 55, No: 11 , published: 01 November 2010
Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
J.J. Vivas-Moreno, N. Porras-Montenegro
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Excitons in cylindrical GaAs Pöschl–Teller quantum dots: Hydrostatic pressure and temperature effects
M.E. Mora-Ramos, M.G. Barseghyan, C.A. Duque
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Excitonic effects on the nonlinear intersubband optical properties of a semi-parabolic one-dimensional quantum dot
G. Rezaei, M.J. Karimi, A. Keshavarz
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Binding energy of shallow donor impurity in asymmetric quantum wells
Chaojin Zhang, Zhanxin Wang, Ying Liu, Kangxian Guo
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Shallow-donor impurity in vertical-stacked InGaN/GaN multiple-quantum wells: Electric field effect
Congxin Xia, Zaiping Zeng, Shuyi Wei, Jingbo Wei
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Effect of substrate temperature on the structural, electrical and optical properties of ZnO:Ga thin films prepared by RF magnetron sputtering
F. Wu, L. Fang, Y.J. Pan, K. Zhou, Q.L. Huang, C.Y. Kong
Physica E, Vol: 43, No: 1 , published: 01 November 2010
High accuracy curve fits for chirality, length and diameter dependent initial modulus of single walled carbon nanotubes
Sunil Anandatheertha, G. Narayana Naik, S. Gopalakrishnan, P. Subba Rao
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Linear and nonlinear optical absorptions of an exciton in a quantum ring
Wenfang Xie
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well
L.L. Li, X.H. Zheng, W. Xu
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Zinc oxide nanowire based field emitters
Sivakumar Ramanathan, Yu-chun Chen, Yonhua Tzeng
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Evaluation of electronic and transport properties of a nano-scale device in the presence of electric field
M. Modarresi, M.R. Roknabadi, N. Shahtahmasbi, D. Vahedi, H. Arabshahi
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas
D.Y. Lin, J.D. Wu, C.C. Hung, C.T. Lu, Y.S. Huang, C.-T. Liang, N.C. Chen
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Coulomb pseudogap in scattering-assisted tunneling of electrons between Landau-quantized two-dimensional electron gases
V.G. Popov, O.N. Makarovskiy, V.T. Renard, J.-C. Portal
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Effect of on band alignment of compressively strained Ga1−xInxNy As1−yzSbz/GaAs quantum well structures
A. Aissat, S. Nacer, M. Seghilani, J.P. Vilcot
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Exciton properties of EuS/PbS/EuS finite confining potential quantum well
K.H. Aharonyan
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Anisotropy of the effective Landé factor in AlxGa1−xAs parabolic quantum wells under applied magnetic fields
A. Bruno-Alfonso, N. Raigoza, E. Reyes-Gómez
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Central barrier width effects on the electron Landé gshort parallel factor in GaAs–Ga0.65Al0.35As double quantum wells
J. Darío Perea, J.R. Mejía-Salazar, N. Porras-Montenegro
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Hydrostatic pressure, temperature and electric field effects on donor binding energy in Pöschl–Teller quantum well
M.G. Barseghyan, Alireza Hakimyfard, S.Y. López, C.A. Duque, A.A. Kirakosyan
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Study of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in spherical GaSb–Ga1−xInxAsySb1−y–GaSb quantum dots
R. Sánchez-Cano, N. Porras-Montenegro
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Theoretical investigation of intersubband transition energies and oscillator strength in CdS/SiO2 quantum dots
S. Abdi-Ben Nasrallah, A. Bouazra, A. Poncet, M. Said
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Dielectric mismatch in finite barrier cubic quantum dots
V.I. Boichuk, I.V. Bilynsky, I.O. Shakleina, I. Kogoutiouk
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Rashba spin–orbit interaction effects on graphene quantum system
Chunxu Bai, Juntao Wang, Junlong Tian, Yanling Yang
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Electron transport through the triple quantum dot
R. Taranko, P. Parafiniuk
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Different growth mechanisms of bimodal InAs/GaAs QDs
G.Y. Zhou, Y.H. Chen, X.L. Zhou, B. Xu, X.L. Ye, Z.G. Wang
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
Shuyi Wei, Qing Chang
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Spin accumulation and spin-dependent Andreev reflection current in a T-shaped double quantum dots
Long Bai, Zheng-Zhong Zhang, Liang Jiang, Fu-Rong Tang
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Electrowetting on a dielectric surface roughened with zinc oxide tetrapod nanocrystals
Jun Xia, Jun Wu
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Optical properties of InN rods on sapphire grown by metal–organic chemical vapor deposition
Yuanping Sun, Yong-Hoon Cho, Zhenhong Dai, Weitian Wang, Hui Wang, Lili Wang, Shuming Zhang, Hui Yang
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Spin-polarized transport in Aharonov–Bohm rings with impurities: A scattering-matrix approach
G. Cattapan, P. Lotti
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Structural and optical properties of Cu2O nanoparticles formed on Al2O3 substrates using spin coating and thermal treatment
Dong Ick Son, Do Hyun Oh, Tae Whan Kim
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Two beam photoluminescence of PbS quantum dots in polyvinyl alcohol
Naresh Babu Pendyala, K.S.R. Koteswara Rao
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Synthesis, characterization and photoluminescence properties of ZnO hexagonal pyramids by the thermal evaporation method
Yu Tian, Hong-Bing Lu, Jin-Chai Li, Yun Wu, Qiang Fu
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Analysing space charge-limited conduction in Au/n-InP Schottky diodes
M. Soylu, B. Abay
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Fabrication and characterization of transparent p–n and p–i–n heterojunctions prepared by spray pyrolysis technique: Effect of post-annealing process and intrinsic middle layer
Hasan Azimi Juybari, Mohammad-Mehdi Bagheri-Mohagheghi, Seyed Ahmad Ketabi, Mehrdad Shokooh-Saremi
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Electron tunneling in a non-magnetic heterostructure in presence of both Dresselhaus and Rashba spin–orbit terms
Jian-Duo Lu
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement
Ali A. Orouji, Hamid Amini Moghadam, A. Dideban
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Beyond the effective temperature: The electron ensemble at high electric fields in disordered organics
I. Jurić, I. Batistić, and E. Tutiš
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 29 October 2010
Spatially probed electron-electron scattering in a two-dimensional electron gas
M. P. Jura, M. Grobis, M. A. Topinka, L. N. Pfeiffer, K. W. West, and D. Goldhaber-Gordon
Phys. Rev. B: Condens. Matter, Vol: 82, No: 15 , published: 29 October 2010
Anomalous spin Hall effects in Dresselhaus (110) quantum wells
Ming-Hao Liu (劉明豪) and Ching-Ray Chang (張慶瑞)
Phys. Rev. B: Condens. Matter, Vol: 82, No: 15 , published: 29 October 2010
Radiative cascade from quantum dot metastable spin-blockaded biexciton
Y. Kodriano, E. Poem, N. H. Lindner, C. Tradonsky, B. D. Gerardot, P. M. Petroff, J. E. Avron, and D. Gershoni
Phys. Rev. B: Condens. Matter, Vol: 82, No: 15 , published: 29 October 2010
Energy spectra for quantum wires and two-dimensional electron gases in magnetic fields with Rashba and Dresselhaus spin-orbit interactions
Sigurdur I. Erlingsson, J. Carlos Egues, and Daniel Loss
Phys. Rev. B: Condens. Matter, Vol: 82, No: 15 , published: 29 October 2010
Density-matrix renormalization-group study of coupled Luttinger liquids
S. Moukouri and E. Eidelstein
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 29 October 2010
Ultrafast sequential charge transfer in a double quantum dot
A. Putaja and E. Räsänen
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 29 October 2010
Scanned gate microscopy of surface-acoustic-wave-induced current through a depleted one-dimensional GaAs channel
R. Crook, R. J. Schneble, M. Kataoka, H. E. Beere, D. A. Ritchie, D. Anderson, G. A. C. Jones, C. G. Smith, C. J. B. Ford, and C. H. W. Barnes
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 29 October 2010
Spin-dependent transport through quantum-dot Aharonov-Bohm interferometers
Bastian Hiltscher, Michele Governale, and Jürgen König
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 29 October 2010
On strain state and pseudo-moiré TEM contrast of InSb quantum dots coherently grown on InAs surface
Bert N.A./Freidin A.B./Kolesnikova A.L./et al.
Phys. Status Solidi A, Vol: 207, No: 10 , published: 29 October 2010
Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells
S. Wiedmann, G. M. Gusev, O. E. Raichev, A. K. Bakarov, and J. C. Portal
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 28 October 2010
High-temperature thermoelectric response of double-doped SrTiO3 epitaxial films
J. Ravichandran, W. Siemons, D.-W. Oh, J. T. Kardel, A. Chari, H. Heijmerikx, M. L. Scullin, A. Majumdar, R. Ramesh, and D. G. Cahill
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 28 October 2010
Electric and thermoelectric phenomena in a multilevel quantum dot attached to ferromagnetic electrodes
M. Wierzbicki and R. Åšwirkowicz
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 28 October 2010
Nonequilibrium transport theory of the singlet-triplet transition: Perturbative approach
B. Horváth, B. Lazarovits, and G. Zaránd
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 28 October 2010
Anisotropic magnetoresistance in a two-dimensional electron system with Rashba and Dresselhaus spin-orbit coupling
C. M. Wang
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 27 October 2010
Interactions of bound excitons in doped core/shell quantum dot heterostructures
Assaf Avidan, Zvicka Deutsch, and Dan Oron
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 27 October 2010
Расчет зонной структуры соединений GeSe методом ЛКАО и исследование глубоких уровней антиструктурных дефектов GeSe и SeGe
Джахангирли З.А., Оруджев Г.С.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Энергетический спектр электронов в твердых растворах Bi0,88Sb0,12, легированных теллуром
Таиров Б.А., Ибрагимова О.И., Дамирова С.З., Юсифова Т.Ф.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Глубокий акцепторный комплекс, связанный с примесью меди, в термообработанных кристаллах Ge1-xSix
Гусейнли Л.А., Зейналов З.М., Захрабекова З.М., Аждаров Г.Х.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Оптические свойства InP, подвергнутых γ-облучению
Рашидова Ш.Ш.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Явление гистерезиса в Ag2Se и Аg2Te  при α↔β переходе
Алиев Ф.Ф., Джафаров М.Б., Саддинова А.А., Вердиева Н.А.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Электрические свойства границ раздела монокристаллов PbTe со сплавом In-Ag-Au
Алиева Т.Д., Ахундова Н.М., Абдинова Г.Д. и др.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Влияние отжига на электрические свойства монокристаллов PbTe с избытком свинца
Багиева Г.З., Мустафаев Н.Б., Абдинова Г.Д., Абдинов Д.Ш.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Электрические и гальваномагнитные свойства твёрдых растворов (Bi2 ТеЗ)о,96(Вi2З)0.04, легированных цинком и индием
Алигулиева Х.В., Абдуллаев Н.А., Кахраманов С.Ш. и др.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Полиморфное превращение в кристаллах TlInSe2 и электрофизические свойства фаз
Алекперов О.З., Наджафов А.И., Гусейнов Г.Г, Абдуллаев А.П.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Поперечное магнитосопротивление низкоразмерной электронной системы при рассеянии на ионах примеси
Аскеров Б.М., Гусейнов Г.И., Фигарова С.Р.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Влияние у-облучения на проводимость кристаллов TlInS2 в переменном поле
Сардарлы Р.М., Самедов О.А., Асланов И.И. и др.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Твердые растворы замещения в системе TlInSe2-TlYbSe2
Зарбалиев М.М., Гахраманов Н.Ф., Ахмедова А.М., Магеррамов А.Б.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Воздействие γ-облучения на диэлектрические коэффициенты и АС-проводимость монокристаллов селенида галлия
Мустафаева С.Н., Асадов М.М., Исмаилов А.А.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Электропроводность FeGa2S4 в переменном электрическом поле
Нифтиев Н.Н., Тагиев О.Б., Гаджиева З.Ф., Мамедов Ф.М.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Оптические спектры YbBi2Te4 и YbBi4Se7
Джалилов Н.З., Махмудова М.А.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Excitonic absorption in gate-controlled graphene quantum d