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   Electrical properties of solids.
      Semiconductors.
         Luminescence.
Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode
Pages 2721-2724
Physica B, Vol: 407, No: 14 , published: 15 July 2012
Photoluminenscence property of ferromagnetic ZnMnO thin films
Pages 2126-2130
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces
Pages 2131-2135
Physica B, Vol: 407, No: 12 , published: 15 June 2012
Surface plasmon polariton-controlled tunable quantum-dot emission
R. J. Moerland, H. T. Rekola, G. Sharma, A.-P. Eskelinen, A. I. Väkeväinen, P. Törmä
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation
Rupak Bhattacharya, Bipul Pal, Bhavtosh Bansal
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Emission from a dipole-forbidden energy state in a ZnO quantum dot induced by a near-field interaction with a fiber probe
T. Yatsui, M. Tsuji, Y. Liu, T. Kawazoe, M. Ohtsu
Appl. Phys. Lett. , Vol: 100, No: 22 , published: 28 May 2012
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
M. F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, R. Goldhahn
Appl. Phys. Lett. , Vol: 100, No: 21 , published: 21 May 2012
Optical characterization of individual quantum dots
Pages 1472-1475
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques
Pages 1538-1542
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition
Pages 1546-1549
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Polarized emission and excitonic fine structure energies of InGaN quantum dots
Pages 1553-1555
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Concentration effect of Tm3+ on cathodoluminescence properties of SiO2:Tm3+ and SiO2:Ho3+,Tm3+ systems
Pages 1582-1585
Physica B, Vol: 407, No: 10 , published: 15 May 2012
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Yuji Zhao, Qimin Yan, Chia-Yen Huang, Shih-Chieh Huang, Po Shan Hsu, Shinichi Tanaka, Chih-Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Daniel Feezell
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Absorption efficiency of gold nanorods determined by quantum dot fluorescence thermometry
L. M. Maestro, P. Haro-González, J. G. Coello, and D. Jaque . M. Maestro, P. Haro-González, J. G. Coello, and D. Jaque
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations
M. Baranowski, R. Kudrawiec, M. Latkowska, M. Syperek, J. Misiewicz, J. A. Gupta
Appl. Phys. Lett. , Vol: 100, No: 20 , published: 14 May 2012
Optically induced charge conversion of coexistent free and bound excitonic complexes in two-beam magnetophotoluminescence of two-dimensional quantum structures
J. Jadczak, L. Bryja, A. Wójs, and M. Potemski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 19 , published: 07 May 2012
Coherent absorption and enhanced photoluminescence in thin layers of nanorods
G. Pirruccio, G. Lozano, Y. Zhang, S. R. K. Rodriguez, R. Gomes, Z. Hens, and Jaime Gómez Rivas
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 30 April 2012
Plasmon-enhanced mid-infrared luminescence from polar and lattice-structure-mismatched CdTe/PbTe single heterojunctions
Chunfeng Cai, Shuqiang Jin, Huizhen Wu, Bingpo Zhang, Lian Hu, P. J. McCann
Appl. Phys. Lett. , Vol: 100, No: 18 , published: 30 April 2012
Multiple excitation process in deep-ultraviolet emission from AlGdN thin films pumped by an electron beam
Shinya Iwahashi,Naohiro Kishi,Shinya Kitayama,Takashi Kita,Yoshitaka Chigi,Tetsuro Nishimoto,Hiroyuki Tanaka,Mikihiro Kobayashi,Tsuguo Ishihara,Hirokazu Izumi
J. Appl. Phys. , Vol: 111, No: 8 , published: 25 April 2012
Photoluminescence lineshape features of carbon δ-doped GaAs heterostructures
J. Schuster, T. Y. Kim, E. Batke, D. Reuter and A. D. Wieck
J. Phys.: Condens. Matter. , Vol: 24, No: 16 , published: 25 April 2012
Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
N. V. Baidus,M. I. Vasilevskiy,S. V. Khazanova,B. N. Zvonkov,H. P. van der Meulen,J. M. Calleja and L. Viña
Europhys. Lett. , Vol: 98, No: 2 , published: 24 April 2012
Identification of visible emission from ZnO quantum dots: Excitation-dependence and size-dependence
Xiaoyong Xu,Chunxiang Xu,Zengliang Shi,Chi Yang,Bin Yu,Jingguo Hu
J. Appl. Phys. , Vol: 111, No: 8 , published: 23 April 2012
Eu luminescence center created by Mg codoping in Eu-doped GaN
Dong-gun Lee, Atsushi Nishikawa, Yoshikazu Terai, Yasufumi Fujiwara
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Photoluminescence induced by twinning interface in CdS nanocrystals
P. Q. Zhao, S. J. Xiong, X. L. Wu, Paul K. Chu
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots
Jun He, Feng Bao, Jinping Zhang
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Surface photoluminescence and magnetism in hydrothermally grown undoped ZnO nanorod arrays
Xiaoyong Xu, Chunxiang Xu, Yi Lin, Tao Ding, Shengjiang Fang, Zengliang Shi, Weiwei Xia, Jingguo Hu
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, X. Liu
Appl. Phys. Lett. , Vol: 100, No: 17 , published: 23 April 2012
Influence of shape of GaN/AlN quantum dots on luminescence decay law
I. A. Aleksandrov, A. K. Gutakovskii and K. S. Zhuravlev
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Luminescence quenching of porous silicon nanoparticles in presence of ascorbic acid
Vera La Ferrara, Giuseppe Fiorentino, Gabriella Rametta and Girolamo Di Francia
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Affect of film thickness on the blue photoluminescence from ZnO
J. C. Moore, L. R. Covington and R. Stansell
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Photoluminescence from SiOx layers containing amorphous silicon nanoparticles
D. Nesheva
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Theoretical studies of the influence of structural inhomogeneities on the radiative recombination time in polar InGaN quantum wells
Marta Gladysiewicz and Robert Kudrawiec
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals
Katsushi Fujii, Takenari Goto and Takafumi Yao
Phys. Status Solidi A, Vol: 209, No: 4 , published: 17 April 2012
Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy
Marius Millot, Zachary M. Geballe, Kin M. Yu, Wladek Walukiewicz, Raymond Jeanloz
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Spatially modulated photoluminescence properties in dynamically strained GaAs/AlAs quantum wells by surface acoustic wave
Tetsuomi Sogawa, Haruki Sanada, Hideki Gotoh, Hiroshi Yamaguchi, Paulo V. Santos
Appl. Phys. Lett. , Vol: 100, No: 16 , published: 16 April 2012
Electroluminescence properties of organic nanostructures studied by scanning tunnelling microscopy
Klaus Kuhnke, Alexander Kabakchiev, Theresa Lutz and Klaus Kern
Phys. Status Solidi B, Vol: 249, No: 4 , published: 16 April 2012
Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method
Wiem Bousslama, Habib Elhouichet, Bernard Gelloz, Brigitte Sieber, Ahmed Addad, Myriam Moreau, Mokhtar Férid, and Nobuyoshi Koshida
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density
Katsunori Makihara, Hidenori Deki, Mitsuhisa Ikeda, and Seiichi Miyazaki
Jpn. J. Appl. Phys., Part 1, Vol: 51, No: 4S , published: 12 April 2012
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
Dong-Soo Shin, Dong-Pyo Han, Ji-Yeon Oh, Jong-In Shim
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires
Eunsoon Oh, Byoung Woo Lee, So-Jeong Shim, Heon-Jin Choi, Byoung Hee Son, Yeong Hwan Ahn, Le Si Dang
Appl. Phys. Lett. , Vol: 100, No: 15 , published: 09 April 2012
Enhanced photoluminescence of colloidal nanocrystals embedded in epitaxially grown semiconductor microstructures
J. Kampmeier, M. Rashad, U. Woggon, M. Ruth, C. Meier, D. Schikora, K. Lischka, and A. Pawlis
Phys. Rev. B: Condens. Matter, Vol: 85, No: 15 , published: 04 April 2012
Optical generation of polarized photoluminescence from GaAs(100)
Zhan Hu, Sima Singha, Daniel H. Rich, Robert J. Gordon
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Origin of size-dependent photoluminescence decay dynamics in colloidal γ-Ga2O3 nanocrystals
Manu Hegde, Ting Wang, Zoran L. Miskovic, Pavle V. Radovanovic
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure
P. H. Wu, D. Dumcenco, Y. S. Huang, H. P. Hsu, C. H. Lai, T. Y. Lin, D. Chrastina, G. Isella, E. Gatti, K. K. Tiong
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Role of nitrogen vacancies in the luminescence of Mg-doped GaN
Qimin Yan, Anderson Janotti, Matthias Scheffler, Chris G. Van de Walle
Appl. Phys. Lett. , Vol: 100, No: 14 , published: 02 April 2012
Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn
M. A. Reshchikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Temperature and composition dependence of photoluminescence dynamics in CdSxSe1−x (0 ≤ x ≤ 1) nanobelts
H. W. Liu, J. P. Lu, H. M. Fan, C. H. Sow, S. H. Tang, X. H. Zhang
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Confinement effects on valence-subband character and polarization anisotropy in (11math2) semipolar InGaN/GaN quantum wells
Christopher Roberts, Qimin Yan, Mao-Sheng Miao, Chris G. Van de Walle
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Capability of photoluminescence for characterization of multi-crystalline silicon
T. Mchedlidze, W. Seifert, M. Kittler, A. T. Blumenau, B. Birkmann, T. Mono, M. Müller
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Deep-level transient spectroscopy and photoluminescence measurements of dissociation energy of the 1.014-eV copper center in copper-diffused silicon crystal
Minoru Nakamura and Susumu Murakami
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films
A. Cretì, D. Valerini, A. Taurino, F. Quaranta, M. Lomascolo, R. Rella
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Controlling energy transfer processes and engineering luminescence efficiencies with low dimensional doping
Xiaoqiang Yu, Christopher J. Summers, Wounjhang Park
J. Appl. Phys. , Vol: 111, No: 7 , published: 01 April 2012
Photoluminescence quenching and conductivity enhancement of PVK induced by CdS quantum dots
Pages 1272-1277
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Forward and reverse bias dependence of radiative recombination efficiency in green (In,Ga)N quantum well diodes
Pages 1278-1281
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Synthesis, characterization and room temperature photoluminescence properties of Al doped ZnO nanorods
Pages 1399-1405
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Effects of heat treatment on physical, microstructural and optical characteristics of PbS luminescent nanocrystals
Pages 1429-1435
Physica E, Vol: 44, No: 7–8 , published: 01 April 2012
Инфракрасное излучение из кремниевых наноструктур, сильно легированных бором
Баграев Н.Т., Клячкин Л.Е., Кузьмин Р.В., Маляренко А.М., Машков В.А.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Влияние легирования фторидом эрбия на фотолюминесценцию пленок SiOx
Власенко Н.А., Сопинский Н.В., Гуле Е.Г., Стрельчук В.В., Олексенко П.Ф., Велигура Л.И., Николенко А.С., Мухльо М.А.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Фотолюминесцентное исследование структурной эволюции аморфных и кристаллических нанокластеров кремния при термическом отжиге слоев субоксида кремния различной стехиометрии
Жигунов Д.М., Швыдун Н.В., Емельянов А.В., Тимошенко В.Ю., Кашкаров П.К., Семиногов В.Н.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Картирование усиления двухфотонной люминесценции в микроструктурах оксида цинка
Семин С.В., Шерстюк Н.Э., Мишина Е.Д., Герман К., Кулюк Л., Расинг Т., Пенг Л.-Х.
Физ. и техн. полупроводников , Vol: 46, No: 3 , published: 26 March 2012
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
Donguk Nam, David Sukhdeo, Szu-Lin Cheng, Arunanshu Roy, Kevin Chih-Yao Huang, Mark Brongersma, Yoshio Nishi, Krishna Saraswat
Appl. Phys. Lett. , Vol: 100, No: 13 , published: 26 March 2012
Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism
Yingzi Peng, Dexuan Huo, Haiping He, Yuan Li, Lingwei Li, Huawen Wang, Zhenghong Qian
J. Magn. Magn. Mater., Vol: 324, No: 5 , published: 22 March 2012
Electron dynamics of shocked polyethylene crystal
Patrick L. Theofanis, Andres Jaramillo-Botero, William A. Goddard, III, Thomas R. Mattsson, and Aidan P. Thompson
Phys. Rev. B: Condens. Matter, Vol: 85, No: 9 , published: 22 March 2012
A device with two kinds of functions —Ultraviolet photodetector and electroluminescence: Fabrication and carrier transport mechanism
Hai Zhou, Guojia Fang, Yongdan Zhu, Nishuang Liu, Haoning Wang, Huihui Huang, Songzhan Li and Xingzhong Zhao
Europhys. Lett. , Vol: 97, No: 6 , published: 22 March 2012
Oxygen-vacancy and depth-dependent violet double-peak photoluminescence from ultrathin cuboid SnO2 nanocrystals
L. Z. Liu, X. L. Wu, J. Q. Xu, T. H. Li, J. C. Shen, Paul K. Chu
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Electronic states and photoluminescence of TiO2 nanotubes with adsorbed surface oxygen
L. Z. Liu, W. Xu, X. L. Wu, Y. Y. Zhang, T. H. Chen, Paul K. Chu
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
Evidence for different origins of the magnetic field effect on current and electroluminescence in organic light-emitting diodes
Andreas Buchschuster, Tobias D. Schmidt, Wolfgang Brütting
Appl. Phys. Lett. , Vol: 100, No: 12 , published: 19 March 2012
On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells
M. J. Kappers, T. J. Badcock, R. Hao, M. A. Moram, S. Hammersley, P. Dawson and C. J. Humphreys
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs
Christopher C. S. Chan, Philip A. Shields, Mark J. Holmes, YiDing Zhuang, Xu Wang, Benjamin P. L. Reid, HeeDae Kim, Duncan W. E. Allsopp and Robert A. Taylor
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
L. Schade, U. T. Schwarz, T. Wernicke, S. Ploch, M. Weyers and M. Kneissl
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Photoluminescence changes in n-type GaN samples after photoelectrochemical treatment
Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh and Takafumi Yao
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD
Jianping Zeng, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Shuaishuai Sun and Ye Tao
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure
Mohamed Almokhtar, Shuichi Emura, Yi Kai Zhou, Shigehiko Hasegawa and Hajime Asahi
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Broadening of photoluminescence for inhomogeneous polar and non-polar InGaN/GaN quantum wells
Marta Gladysiewicz and Robert Kudrawiec
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Martin Mikulics, Hilde Hardtdegen, Andreas Winden, Alfred Fox, Michel Marso, Zdeněk Sofer, Hans Lüth, Detlev Grützmacher and Peter Kordoš
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
Daniel H. Rich, Ofer Moshe, Benjamin Damilano and Jean Massies
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Suppression of defect-related luminescence in laser-annealed InGaN epilayers
G. Tamulaitis, D. Dobrovolskas, J. Mickevičius, V. Kazlauskienė, J. Miškinis, E. Kuokštis, P. Onufrijevs, A. Medvids, J.-J. Huang, C.-Y. Chen, C.-H. Liao and C. C. Yang
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Growth and structural, optical and electrical properties study of bulk GaN
D. Gogova, G. Rudko and D. Siche
Phys. Status Solidi C, Vol: 9, No: 3-4 , published: 17 March 2012
Photoluminescence Investigation of Defects and Optical Band Gap in Multiferroic BiFeO3 Single Crystals
Reda Moubah, Guy Schmerber, Olivier Rousseau, Dorothée Colson, and Michel Viret
Appl. Phys. Express, Vol: 5, No: 3 , published: 15 March 2012
Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms
R. Kudrawiec, M. Syperek, M. Latkowska, J. Misiewicz, V.-M. Korpijärvi, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, M. Pessa
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots
Ł. Dusanowski, G. Sęk, A. Musiał, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, A. Forchel
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Polarization anisotropic luminescence of tunable single lateral quantum dot molecules
C. Hermannstädter, M. Witzany, M. Heldmaier, R. Hafenbrak, K. D. Jöns, G. J. Beirne, P. Michler
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
N. Modi, L. Tsybeskov, J.-M. Baribeau, X. Wu, D. J. Lockwood
J. Appl. Phys. , Vol: 111, No: 6 , published: 15 March 2012
Metal enhanced photoluminescence from Al-capped ZnMgO films: The roles of plasmonic coupling and non-radiative recombination
Yanjie Wang, Haiping He, Yalin Zhang, Luwei Sun, Liang Hu, Kewei Wu, Jingyun Huang, Zhizhen Ye
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Tuning of mid-infrared emission of ternary PbSrTe/CdTe quantum dots
A. Hochreiner, S. Kriechbaumer, T. Schwarzl, H. Groiss, M. Hassan, G. Springholz
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Terahertz electroluminescence from 6Н-SiC structures with natural superlattice
V. I. Sankin, A. V. Andrianov, A. O. Zakhar`in, A. G. Petrov
Appl. Phys. Lett. , Vol: 100, No: 11 , published: 12 March 2012
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells
T. Suski, G. Staszczak, S. P. Łepkowski, P. Perlin, R. Czernecki, I. Grzegory, M. Funato, Y. Kawakami
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
J. Danhof, U. T. Schwarz, T. Meyer, C. Vierheilig and M. Peter
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells
T. Suski, G. Staszczak, S. P. Łepkowski, P. Perlin, R. Czernecki, I. Grzegory, M. Funato and Y. Kawakami
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
J. Danhof, U. T. Schwarz, T. Meyer, C. Vierheilig and M. Peter
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
The field emission of Cu-doped ZnO
Fan Ye, Xing-Min Cai, Fu-Ping Dai, Shou-Yong Jing, Dong-Ping Zhang, Ping Fan and Li-Jun Liu
Phys. Status Solidi B, Vol: 248, No: 3 , published: 11 March 2012
The field emission of Cu-doped ZnO
Fan Ye, Xing-Min Cai, Fu-Ping Dai, Shou-Yong Jing, Dong-Ping Zhang, Ping Fan and Li-Jun Liu
Phys. Status Solidi B, Vol: 249, No: 3 , published: 11 March 2012
Photoluminescence Study of Defect Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide
Xiaohui Liu, Chika Fujiwara, Xiaoming Dou, Shigefusa F. Chichibu,  Mutsumi Sugiyama
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 10 March 2012
Near-infrared photoluminescence from ZnO
Mingsong Wang, Yajun Zhou, Yiping Zhang, Eui Jung Kim, Sung Hong Hahn, Seung Gie Seong
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
S. Yang, C. C. Kuo, W.-R. Liu, B. H. Lin, H.-C. Hsu, C.-H. Hsu, W. F. Hsieh
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence of Nd-doped SnO2 thin films
H. Rinnert, P. Miska, M. Vergnat, G. Schmerber, S. Colis, A. Dinia, D. Muller, G. Ferblantier, A. Slaoui
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes
Zhifeng Shi, Xiaochuan Xia, Wei Yin, Shikai Zhang, Hui Wang, Jin Wang, Long Zhao, Xin Dong, Baolin Zhang, Guotong Du
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
High brightness alternating current electroluminescence with organic light emitting material
Ajay Perumal, Björn Lüssem, Karl Leo
Appl. Phys. Lett. , Vol: 100, No: 10 , published: 05 March 2012
Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
Liyang Zhang, Kai Cheng, Hu Liang, Ruben Lieten, Maarten Leys, Gustaaf Borghs
Jpn. J. Appl. Phys., Vol: 51, No: 3R , published: 03 March 2012
Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures
H. Long, T. J. Yu, L. Liu, Z. J. Yang, H. Fang, G. Y. Zhang
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
H. J. Haugan, G. J. Brown, S. Elhamri, S. Pacley, B. V. Olson, T. F. Boggess
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Effects of oxidization and deoxidization on charge-propagation dynamics in rare-earth-doped titanium dioxide with room-temperature luminescence
Masashi Ishii, Brian Towlson, Nigel Poolton, Susumu Harako, Xinwei Zhao, Shuji Komuro, Bruce Hamilton
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Optimum strain configurations for carrier injection in near infrared Ge lasers
O. Aldaghri, Z. Ikonić, R. W. Kelsall
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon
Junzhuan Wang, Linwei Yu, Sergey Abolmasov, Ka Hyun Kim, Pere Roca i Cabarrocas
J. Appl. Phys. , Vol: 111, No: 5 , published: 01 March 2012
Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy
H. Sasakura, C. Hermannstädter, S. N. Dorenbos, N. Akopian, M. P. van Kouwen, J. Motohisa, Y. Kobayashi, H. Kumano, K. Kondo, K. Tomioka, T. Fukui, I. Suemune, and V. Zwiller
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 29 February 2012
In situ multifrequency ferromagnetic resonance and x-ray magnetic circular dichroism investigations on Fe/GaAs(110): Enhanced g-factor
F. M. Römer, M. Möller, K. Wagner, L. Gathmann, R. Narkowicz, H. Zähres, B. R. Salles, P. Torelli, R. Meckenstock, J. Lindner, M. Farle
Appl. Phys. Lett. , Vol: 100, No: 9 , published: 27 February 2012
Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides
J. B. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle
Phys. Rev. B: Condens. Matter, Vol: 85, No: 8 , published: 27 February 2012
Влияние отжига на люминесценцию кристаллов CuI p-типа проводимости
Грузинцев А.Н., Загороднев В.Н.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Влияние послеростовой термической обработки на структурные и оптические свойства InP/InAsP/InP нитевидных нанокристаллов
Цырлин Г.Э., Tchernycheva M., Patriarche G., Harmand J.-C.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Numerical simulation of optical feedback on a quantum dot lasers
Al-Khursan Amin H., Ghalib Basim Abdullattif, Al-Obaidi Sabri J.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Неравномерность пространственного распределения отрицательной люминесценции в фотодиодах на основе InAsSb(P) (длинноволновая граница lambda 0.1=5.2 мкм)
Карандашев С.А., Матвеев Б.А., Мжельский И.В., Половинкин В.Г., Ременный М.А., Рыбальченко А.Ю., Стусь Н.М.
Физ. и техн. полупроводников , Vol: 46, No: 2 , published: 24 February 2012
Near-resonant two-photon absorption in luminescent CdTe quantum dots
Jayakrishna Khatei, C. S. Suchand Sandeep, Reji Philip, K. S. R. Koteswara Rao
Appl. Phys. Lett. , Vol: 100, No: 8 , published: 20 February 2012
Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy
J. Kasai, R. Akimoto, T. Hasama, H. Ishikawa, S. Fujisaki, S. Tanaka and S. Tsuji
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys
A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney and J. P. R. David
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Near-field photoluminescence spectroscopy of CdTe/Cd0.75Mn0.25Te tilted superlattices
Yukihiro Harada, Takashi Kita, Kazunari Matsuda, Yoshihiko Kanemitsu and Henri Mariette
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers
Hanxue Zhao, Yoon Soon Fatt, Ngo Chun Yong and Rui Wang
Phys. Status Solidi C, Vol: 9, No: 2 , published: 18 February 2012
Preparation and Luminescence Properties of Organic Phosphorescent Nanoparticles
Yousuke Miyashita, Shinichi Horino, Hitoshi Kasai, Hidetoshi Oikawa, and Hachiro Nakanishi
Jpn. J. Appl. Phys., Vol: 51, No: 2R , published: 16 February 2012
White Polarized Electroluminescence Devices by Dye Deposition on Oriented Polyfluorene Films
Claire Heck, Toshiko Mizokuro, and Nobutaka Tanigaki
Appl. Phys. Express, Vol: 5, No: 2 , published: 15 February 2012
Tunable electroluminescence from low-threshold voltage LED structure based on electrodeposited Zn1−xCdxO-nanorods/p-GaN heterojunction
Th. Pauporté, O. Lupan and B. Viana
Phys. Status Solidi A, Vol: 209, No: 2 , published: 11 February 2012
Room temperature single photon emission from an epitaxially grown quantum dot
O. Fedorych, C. Kruse, A. Ruban, D. Hommel, G. Bacher, T. Kümmell
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Single photon emission from InGaN/GaN quantum dots up to 50 K
Stefan Kremling, Christian Tessarek, Heiko Dartsch, Stephan Figge, Sven Höfling, Lukas Worschech, Carsten Kruse, Detlef Hommel, Alfred Forchel
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals
S. A. Dyakov, D. M. Zhigunov, A. Hartel, M. Zacharias, T. S. Perova, V. Yu. Timoshenko
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device
T. Omata, Y. Tani, S. Kobayashi, K. Takahashi, A. Miyanaga, Y. Maeda, S. Otsuka-Yao-Matsuo
Appl. Phys. Lett. , Vol: 100, No: 6 , published: 06 February 2012
Spontaneous emission spectra and quantum light-matter interactions from a strongly coupled quantum dot metal-nanoparticle system
C. Van Vlack, Philip Trøst Kristensen, and S. Hughes
Phys. Rev. B: Condens. Matter, Vol: 85, No: 7 , published: 03 February 2012
Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
A. Y. Polyakov, Lee-Woon Jang, Dong-Seob Jo, In-Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Kwang Hyeon Baik, Sung-Min Hwang
J. Appl. Phys. , Vol: 111, No: 3 , published: 01 February 2012
Mechanism of quantum dot luminescence excitation within implanted SiO2:Si:C films
A. F. Zatsepin, E. A. Buntov, V. S. Kortov, D. I. Tetelbaum, A. N. Mikhaylov,  A.I. Belov
J. Phys.: Condens. Matter. , Vol: 24, No: 4 , published: 01 February 2012
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U. Jahn, J. Lähnemann, C. Pfüller, O. Brandt, S. Breuer, B. Jenichen, M. Ramsteiner, L. Geelhaar, and H. Riechert
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 30 January 2012
Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
Y. J. Kuang, S. Sukrittanon, H. Li, C. W. Tu
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Picosecond transient photoluminescence in high-density Si-nanodisk arrays fabricated using bio-nano-templates
Takayuki Kiba, Yoshiya Mizushima, Makoto Igarashi, Chi-Hsien Huang, Seiji Samukawa, Akihiro Murayama
Appl. Phys. Lett. , Vol: 100, No: 5 , published: 30 January 2012
Phosphorus and boron codoping of silicon nanocrystals by ion implantation: Photoluminescence properties
Toshihiro Nakamura, Sadao Adachi, Minoru Fujii, Kenta Miura, and Shunya Yamamoto
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 25 January 2012
Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities
Kelley Rivoire, Sonia Buckley, Yuncheng Song, Minjoo Larry Lee, and Jelena Vučković
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 23 January 2012
Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
Rosa Ruggeri,Fortunato Neri,Antonella Sciuto,Vittorio Privitera,Corrado Spinella,Giovanni Mannino
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO
Z. Zhang,K. E. Knutsen,T. Merz,A. Yu. Kuznetsov,B. G. Svensson,L. J. Brillson
Appl. Phys. Lett. , Vol: 100, No: 4 , published: 23 January 2012
Поляризационные зависимости электролюминесценции и поглощения вертикально-коррелированных InAs/GaAs-квантовых точек
Соболев М.М., Гаджиев И.М., Бакшаев И.О., Неведомский В.Н., Буяло М.С., Задиранов Ю.М., Золотарева Р.В., Портной Е.Л.
Физ. и техн. полупроводников , Vol: 46, No: 1 , published: 21 January 2012
Температурная зависимость интенсивности фотолюминесценции самоорганизованных квантовых точек CdTe в матрице ZnTe при разных условиях возбуждения
Резницкий А.Н., Клочихин А.А., Пермогоров С.А.
Физ. тверд. тела, Vol: 54, No: 1 , published: 20 January 2012
Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
P. GladkovE. ,Hulicius,T. Paskova,E. Preble,K. R. Evans
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Growth orientation dependent photoluminescence of GaAsN alloys
Xiuxun Han,Tomohiro Tanaka,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi,Shinichiro Sato
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure  
Yang Yang,Lu Jin,Xiangyang Ma,Deren Yang
Appl. Phys. Lett. , Vol: 100, No: 3 , published: 18 January 2012
Carrier trapping and luminescence polarization in quantum dashes
A. Musiał, P. Kaczmarkiewicz, G. Sęk, P. Podemski, P. Machnikowski, J. Misiewicz, S. Hein, S. Höfling, and A. Forchel
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 17 January 2012
Abstraction of Blue Photoluminescence in Al-Doped ZnO Nanoparticles Prepared by Electron Beam Deposition
Jung-Hye Kim, Tae-Ho Shin, Kee-Jeong Yang, Jaewook Jeong, and Byeongdae Choi
Appl. Phys. Express, Vol: 5, No: 1 , published: 15 January 2012
Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
D. Dagnelund, I. P. Vorona, G. Nosenko, X. J. Wang, C. W. Tu, H. Yonezu, A. Polimeni, M. Capizzi, W. M. Chen, I. A Buyanova
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Carrier dynamics in bulk GaN
Patrik Šcajev, Kęstutis Jarašiūnas, Serdal Okur, Ümit Özgür, Hadis Morkoç
J. Appl. Phys. , Vol: 111, No: 2 , published: 15 January 2012
Measurement of interchain and intrachain exciton hopping barriers in luminescent polymer
P. L. Santos, B. B. A. Costa, K. S. Araujo, L. A. Cury, E. W. Snedden, K. N. Bourdakos, F. B. Diasand, A. P. Monkman
J. Phys.: Condens. Matter. , Vol: 24, No: 1 , published: 11 January 2012
Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells
S. Turcotte, J.-N. Beaudry, R. A. Masut, P. Desjardins, G. Bentoumi, and R. Leonelli
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 10 January 2012
Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence
D. Spirkoska, Al. L. Efros, W. R. L. Lambrecht, T. Cheiwchanchamnangij, A. Fontcuberta i Morral, and G. Abstreiter
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 10 January 2012
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells
A. Giorgioni, E. Gatti, E. Grilli, A. Chernikov, S. Chatterjee, D. Chrastina, G. Isella, M. Guzzi
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition
Yu Bai, Mayank T. Bulsara, Eugene A. Fitzgerald
J. Appl. Phys. , Vol: 111, No: 1 , published: 10 January 2012
Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Sirona Valdueza-Felip, Lorenzo Rigutti, Fernando B. Naranjo, Bertrand Lacroix, Susana Fernández, Pierre Ruterana, François H. Julien, Miguel González-Herráez and Eva Monroy
Phys. Status Solidi A, Vol: 209, No: 1 , published: 10 January 2012
Observation of a blue shift in the optical response at the fundamental band gap in Ga1-xMnxAs
T. de Boer, A. Gamouras, S. March, V. Novák, and K. C. Hall
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 06 January 2012
Resonance Fluorescence from Semiconductor Quantum Dots: Beyond the Mollow Triplet
Anders Moelbjerg, Per Kaer, Michael Lorke, and Jesper Mørk
Phys. Rev. Lett., Vol: 108, No: 1 , published: 06 January 2012
Phonon-assisted luminescence of polar semiconductors: Fröhlich coupling versus deformation-potential scattering
A. Chernikov, V. Bornwasser, M. Koch, S. Chatterjee, C. N. Böttge, T. Feldtmann, M. Kira, S. W. Koch, T. Wassner, S. Lautenschläger, B. K. Meyer, and M. Eickhoff
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 04 January 2012
Anomalous photoluminescence Stokes shift in CdSe nanoparticle and carbon nanotube hybrids
Austin J. Akey, Chenguang Lu, Lijun Wu, Yimei Zhu, and Irving P. Herman
Phys. Rev. B: Condens. Matter, Vol: 85, No: 4 , published: 03 January 2012
Observation of nonlinear absorption and visible photoluminescence emission in chemically synthesized Cu2+ doped ZnS nanoparticles
A. K. Kole, P. Kumbhakar, U. Chatterjee
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
X-ray luminescence of CdTe quantum dots in LaF3:Ce/CdTe nanocomposites
Marius Hossu, Zhongxin Liu, Mingzhen Yao, Lun Ma, Wei Chen
Appl. Phys. Lett. , Vol: 100, No: 1 , published: 02 January 2012
Synthesis and photoluminescence properties of SnO2/ZnO hierarchical nanostructures
Pages 791-796
Physica E, Vol: 44, No: 4 , published: 01 January 2012
Photoluminescence and ultrafast intersubband relaxation in Ge/SiGe multiple quantum wells
E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, A. Chernikov, V. Bornwasser, N. Köster, R. Woscholski, and S. Chatterjee
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 28 December 2011
Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots
A. Balocchi, J. Renard, C. T. Nguyen, B. Gayral, T. Amand, H. Mariette, B. Daudin, G. Tourbot, and X. Marie
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 15 December 2011
Effects of atomic ordering on the electronic and optical properties of self-assembled InxGa1−xAs/GaAs semiconductor quantum dots
Ranber Singh and Gabriel Bester
Phys. Rev. B: Condens. Matter, Vol: 84, No: 24 , published: 14 December 2011
Electroluminescence of molecules in a scanning tunneling microscope: Role of tunneling electrons and surface plasmons
Guangjun Tian and Yi Luo
Phys. Rev. B: Condens. Matter, Vol: 84, No: 20 , published: 14 November 2011
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Li Zhicong, Li Panpan, Wang Bing, Li Hongjian, Liang Meng, Yao Ran, Li Jing, Deng Yuanming, Yi Xiaoyan, Wang Guohong,  Li Jinmin
J. Semicond., Vol: 32, No: 11 , published: 11 November 2011
Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals
Jiayue Xu, Qingbo He, Hui Shen, Min Jin, Yan Zhang, Xinhua Li
Cryst. Res. Technol., Vol: 46, No: 11 , published: 10 November 2011
Luminescence spectra of quantum dots in microcavities. III. Multiple quantum dots
F. P. Laussy, A. Laucht, E. del Valle, J. J. Finley, and J. M. Villas-Bôas
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 09 November 2011
Phonon effects on the radiative recombination of excitons in double quantum dots
Paweł Karwat, Anna Sitek, and Paweł Machnikowski
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 09 November 2011
Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study
A. Carvalho, D. J. Backlund, and S. K. Estreicher
Phys. Rev. B: Condens. Matter, Vol: 84, No: 15 , published: 31 October 2011
Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications
Manuel J. Romero, Hui Du, Glenn Teeter, Yanfa Yan, and Mowafak M. Al-Jassim
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 24 October 2011
Magnetophotoluminescence study of intershell exchange interaction in CdTe/ZnTe quantum dots
T. Kazimierczuk, T. Smoleński, M. Goryca, Ł. Kłopotowski, P. Wojnar, K. Fronc, A. Golnik, M. Nawrocki, J. A. Gaj, and P. Kossacki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 16 , published: 21 October 2011
Photoluminescent Characteristics of Mn2+ Centers Selectively Substituted for Different Cations in CuAlS2
Yoshinobu Miyamoto, Tetsuo Honma, Koutoku Ohmi
Jpn. J. Appl. Phys., Vol: 50, No: 10R , published: 20 October 2011
Магнитолюминесценция структур CdTe/MnTe/CdMgTe с ультратонкими слоями MnTe
Агекян В.Ф., Holtz P.O., Karczewski G., Кац В.Н., Москаленко Е.С., Серов А.Ю., Философов Н.Г.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Лазеры с сильнонапряженной квантовой ямой GaInAs с компенсирующими слоями GaAsP, излучающие на длине волны 1220 нм, выращенные методом МОС-гидридной эпитаксии на подложке GaAs
Винокуров Д.А., Капитонов В.А., Николаев Д.Н., Пихтин Н.А., Станкевич А.Л., Шамахов В.В., Бондарев А.Д., Вавилова Л.С., Тарасов И.С.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Выращивание пленок твердого раствора (GaAs)1-x(ZnSe)x и исследование их структурных и некоторых фотоэлектрических свойств
Саидов А.С., Саидов М.С., Усмонов Ш.Н., Лейдерман А.Ю., Каланов М.У., Гаимназаров К.Г., Курмантаев А.Н.
Физ. тверд. тела, Vol: 53, No: 10 , published: 15 October 2011
Интерфейсная электролюминесценция в изотипном гетеропереходе II типа InAs/InAsSbP при комнатной температуре
Григорьев М.М., Иванов Э.В., Моисеев К.Д.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
Zhang Yu, Wang Guowei, Tang Bao, Xu Yingqiang, Xu Yun, Song Guofeng
J. Semicond., Vol: 32, No: 10 , published: 14 October 2011
Fractal Manifestations of Percolation-Cluster Structural Element in Emission Spectra of Samples with ZnSe Quantum Dots
Bondar N.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Photoluminescence Properties of Layered Pb1-xCdxI2 Solid Solutions
Gnatenko Yu.P., Fur’yer M.S., Bukivskij P.M., Skubenko P.A., Piryatinski Yu.P., Gamernyk R.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Influence of Structural Defects on Excitonic Photoluminescence of Pentacene
Piryatinski Yu.P., Kurik M.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Luminescent Properties of Near-Surface Semicondictive Layers and Quantum Superlattices
Lytovchenko V.G., Korbutyak D.V.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Photoluminescence Study of Porous Silicon as Photosensitizer of Singlet Oxygen Generation
Timoshenko V.Yu.
Укр. фiз. ж., Vol: 56, No: 10 , published: 13 October 2011
Исследование влияния облучения электронным пучком в РЭМ на катодолюминесценцию и наведенный ток в структурах с множественными квантовыми ямами InGaN/GaN
П. С. Вергелес, Н. М. Шмидт, Е. Б. Якимов
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 10 , published: 10 October 2011
Structural Dependence of Photoluminescence and Room-Temperature Ferromagnetism in Lightly Cu-Doped ZnO Nanorods
Lin C.C., Young S.L., Kung C.Y., Chen H.Z., Kao M.C., Horng L., Shih Y.T.
IEEE Trans. Magn., Vol: 47, No: 10 , published: 06 October 2011
Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures
Pages 202-206
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Effect of synthesis conditions on microstructures and photoluminescence properties of Ga doped ZnO nanorod arrays
Pages 307-312
Physica E, Vol: 44, No: 1 , published: 01 October 2011
Photoluminescence measurements of zero-phonon optical transitions in silicon nanocrystals
I. Sychugov, J. Valenta, K. Mitsuishi, M. Fujii, and J. Linnros
Phys. Rev. B: Condens. Matter, Vol: 84, No: 12 , published: 30 September 2011
Исследование структуры дефектов в пленках Cdx Hg1-x Te, выращенных жидкофазной эпитаксией, с помощью низкоэнергетической ионной обработки
Ижнин И.И., Ижнин А.И., Фицыч Е.И., Смирнова Н.А., Денисов И.А., Поцяск М., Мынбаев К.Д.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Влияние примеси железа на люминесценцию и фотопроводимость кристаллов ZnSe в видимой области спектра
Ваксман Ю.Ф., Ницук Ю.А., Яцун В.В., Насибов А.С., Шапкин П.В.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Влияние СВЧ-облучения на фотолюминесценцию связанных экситонов в монокристаллах CdTe : Cl
Корбутяк Д.В., Лоцько А.П., Вахняк Н.Д., Демчина Л.А., Конакова Р.В., Миленин В.В., Редько Р.А.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Фотолюминесценция в кремнии, имплантированном ионами кремния с аморфизующими дозами
Соболев Н.А., Калядин А.Е., Кютт Р.Н., Сахаров В.И., Серенков И.Т., Шек Е.И., Афросимов В.В., Тетельбаум Д.И.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Оптические свойства квантово-размерных гетероструктур на основе твердых растворов GaPxNyAs1-x-y
Егоров А.Ю., Крыжановская Н.В., Соболев М.С.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Особенности фотолюминесцентных свойств квантовых точек селенида кадмия с примесью меди
Целиков Г.И., Дорофеев С.Г., Тананаев П.Н., Тимошенко В.Ю.
Физ. и техн. полупроводников , Vol: 45, No: 9 , published: 27 September 2011
Characterization and optical properties of ZnS nanorods branched out from ZnS film on Zn foil
Xinhua Zhang, Yiqing Chen, Taibo Guo and Lizhu Liu
Cryst. Res. Technol., Vol: 46, No: 9 , published: 17 September 2011
Photoluminescence from screen printed ZnO based nanocrystalline films
A. Srivastava, R. K. Shukla and K. P. Misra
Cryst. Res. Technol., Vol: 46, No: 9 , published: 17 September 2011
Structure-controlled growth of ZnO nanonails by thermal evaporation technique
M. Senthil Kumar, D. Chhikara,  K. M. K. Srivatsa
Cryst. Res. Technol., Vol: 46, No: 9 , published: 17 September 2011
Особенности и механизмы фотолюминесценции наноструктурированных пленок карбида кремния,выращиваемых на кремнии в вакууме
Орлов Л.К., Штейнман Э.А., Ивина Н.Л., Вдовин В.И.
Физ. тверд. тела, Vol: 53, No: 9 , published: 13 September 2011
Фотолюминесценция в кремнии, имплантированном ионами эрбия при повышенной температуре
Соболев Н.А., Калядин А.Е., Шек И.Е., Сахаров В.И., Серенков И.Т., Вдовин В.И., Паршин Е.О., Маковийчук М.И.
Физ. и техн. полупроводников , Vol: 45, No: 8 , published: 27 August 2011
Исследование фото- и катодолюминесценции пленок ZnO
А. Н. Грузинцев, В. Т. Волков, Е. Е. Якимов, Е. Б. Якимов
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 8 , published: 22 August 2011
Сравнительный анализ спектров поглощения и излучения порошков оксида цинка
М. М. Михайлов, В. В. Нещименко, Чундун Ли
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2011, No: 8 , published: 22 August 2011
Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
Ryo Osabe, Tadashi Okumura, Simon Kondo, Nobuhiko Nishiyama, Shigehisa Arai
Jpn. J. Appl. Phys., Vol: 50, No: 8R , published: 22 August 2011
MBE growth and properties of low-density InAs/GaAs quantum dot structures
G. Trevisi, L. Seravalli, P. Frigeri, C. Bocchi, V. Grillo, L. Nasi, I. Suárez, D. Rivas, G. Muñoz-Matutano and J. Martínez-Pastor
Cryst. Res. Technol., Vol: 46, No: 8 , published: 21 August 2011
Эффект компенсации в нелегированном поликристаллическом CdTe, синтезированном в неравновесных условиях
Багаев В.С., Клевков Ю.В., Колосов С.А., Кривобок В.С., Шепель А.А.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
Влияние дисперсии и затухания состояний тепловых фононов на поглощение продольного ультразвука в кристаллах Ge
Кулеев И.Г., Кулеев И.И., Бахарев С.М.
Физ. тверд. тела, Vol: 53, No: 8 , published: 16 August 2011
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
Zhu Yan, Li Mifeng, He Jifang, Yu Ying, Ni Haiqiao, Xu Yingqiang, Wang Juan, He Zhenhong  and Niu Zhichuan
J. Semicond., Vol: 32, No: 8 , published: 16 August 2011
Periodic Nanoripples and Photoluminescence on ZnO:Al Film Induced by Femtosecond Laser Pulses
Zhou Kan,  Feng Donghai, Li Xia,  Jia Tianqing,  Liu Jiansheng,  Xu Zhizhan
Acta opt. sin=Guangxue xuebao , Vol: 31, No: 8 , published: 16 August 2011
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
Michael A. Reshchikov, Alexander A. Kvasov, Marilyn F. Bishop, Tom McMullen, Alexander Usikov, Vitali Soukhoveev, and Vladimir A. Dmitriev
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 15 August 2011
Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies
Kentaro Watanabe, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, and Masakazu Ichikawa
Jpn. J. Appl. Phys., Part 4 , Vol: 50, No: 8S3 , published: 14 August 2011
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Two-photon photoluminescence excitation spectroscopy of single quantum dots
Y. Benny, Y. Kodriano, E. Poem, S. Khatsevitch, D. Gershoni, and P. M. Petroff
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 12 August 2011
Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations
Yu. Naseka,O. Strilchuk,V. Komar,I. Terzin,S. Sulima,K. Bryleva
Phys. Status Solidi B, Vol: 249, No: 1 , published: 10 August 2011
Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
S. P. Dash, S. Sharma, J. C. Le Breton, J. Peiro, H. Jaffrès, J.-M. George, A. Lemaître, and R. Jansen
Phys. Rev. B: Condens. Matter, Vol: 84, No: 5 , published: 04 August 2011
Spin-orbit Hanle effect in high-mobility quantum wells
A. V. Poshakinskiy and S. A. Tarasenko
Phys. Rev. B: Condens. Matter, Vol: 84, No: 7 , published: 03 August 2011
Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films
J. P. Leitão, N. M. Santos, P. A. Fernandes, P. M. P. Salomé, A. F. da Cunha, J. C. González, G. M. Ribeiro, and F. M. Matinaga
Phys. Rev. B: Condens. Matter, Vol: 84, No: 2 , published: 29 July 2011
Ambient Dependence of Photoluminescence for ZnO Nanocrystalline Films Synthesized in a Sonochemical Method
Dong Jae Lee, Jong Hyurk Park, Kee Joo Yee, and Yun Sang Lee
Jpn. J. Appl. Phys., Vol: 50, No: 7R , published: 27 July 2011
The effect of ZnO buffer layer on structural and optical properties of ZnO nanorods
Jihui Lang, Xue Li, Jinghai Yang, Qiang Han, Yongsheng Yan, Ming Gao, Dan Wang, Lili Yang, Xiaoyan Liu, Rui Wang and Suyang Yang
Cryst. Res. Technol., Vol: 46, No: 7 , published: 17 July 2011
Effect of Cr doping on the structural and optical properties of ZnS nanoparticles
D. Amaranatha Reddy, G. Murali, R. P. Vijayalakshmi, B. K. Reddy and B. Sreedhar
Cryst. Res. Technol., Vol: 46, No: 7 , published: 17 July 2011
Фотолюминесценция гетероструктур на основе Hg1-xCdxTe, выращенных методом молекулярно-лучевой эпитаксии
К.Д.Мынбаев, Н.Л.Баженов, В.И.Иванов-Омский, Н.Н.Михайлов, М.В.Якушев, А.В.Сорочкин, В.Г.Ремесник, С.А.Дворецкий, В.С.Варавин, Ю.Г.Сидоров
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Фотолюминесценция CdTe, выращенного при значительном отклонении от термодинамического равновесия
В.С.Багаев, Ю.В.Клевков, С.А.Колосов, В.С.Кривобок , Е.Е.Онищенко, А.А.Шепель
Физ. и техн. полупроводников , Vol: 45, No: 7 , published: 07 July 2011
Correlation between Resistance Switching States and Photoluminescence Emission in ZnO Films
Vadim Sh. Yalishev, Shavkat U. Yuldashev, Yeon Soo Kim, Bae Ho Park
Appl. Phys. Express, Vol: 4, No: 7 , published: 07 July 2011
Influence of Annealing on the Structure and 1.54 μmPhotoluminescence of Er-Doped ZnO Thin Films Prepared by Sol–Gel Method
Lei Miao, Xiudi Xiao, Fanyong Ran, Sakae Tanemura, and Gang Xu
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631)
Víctor Hugo Méndez-García, Gerardo García-Liñán, Edgar López-Luna, Esteban Cruz-Hernández, and Máximo López-López
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method
Wei Zhao, Lai Wang, Wenbin Lv, Lei Wang, Jiaxing Wang, Zhibiao Hao, and Yi Luo
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Green/Red Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin-Coating of Rare-Earth Organic Compounds on Silicon
Takashi Ohzone, Toshihiro Matsuda, Souta Hase, Shingo Nohara, and Hideyuki Iwata
Jpn. J. Appl. Phys., Vol: 50, No: 6R , published: 27 June 2011
Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy–Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
Akio Suzuki, Takayuki Mori, Atsuhiko Fukuyama, Tetsuo Ikari, Ji-Hyun Paek, Masahito Yamaguchi
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 6S , published: 26 June 2011
Характеристики излучения тонкопленочных электролюминесцентных источников на базе нанокомпозитных пленок ZnSe
Валеев Р.Г., Бельтюков А.Н., Ветошкин В.М., Романов Э.А., Елисеев А.А.
Ж. техн. физ., Vol: 81, No: 6 , published: 18 June 2011
Идентификация вакансии азота в монокристалле AlN: исследования методами ЭПР и термолюминесценции
Солтамов В.А., Ильин И.В., Солтамова А.А., Толмачев Д.О., Мохов Е.Н., Баранов П.Г.
Физ. тверд. тела, Vol: 53, No: 6 , published: 11 June 2011
Фотолюминесценция наноструктуризированных пленок кубического карбида кремния, выращенных на кремнии
Л. К. Орлов, Э. А. Штейнман, В. И. Вдовин
Изв. РАН. Сер. физ., Vol: 75, No: 5 , published: 10 June 2011
Multidirectional Observation of Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots
Yuichiro Ikeuchi, Tomoya Inoue, Masaki Asada, Yukihiro Harada, Takashi Kita, Eiji Taguchi, Hidehiro Yasuda
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Influence of High-Energy Electron Beam on Source Fluxes during Molecular Beam Epitaxy Growth on Photoluminescence Upconversion from the GaAs Band Gap
David M. Tex, Itaru Kamiya
Appl. Phys. Express, Vol: 4, No: 6 , published: 10 June 2011
Эволюция оптических свойств при отжиге многослойной нанопериодической системы SiOx/ZrO2, содержащей нанокластеры кремния
Ершов А.В., Тетельбаум Д.И., Чугров И.А., et al.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Экситонный спектр квантовых ям ZnO/ZnMgO
Бобров М.А., Торопов А.А., Иванов С.В., El-Shaer A., Bakin A., Waag A.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Циркулярная поляризация фотолюминесценции двумерной системы A+-центров в магнитном поле
Петров П.В., Иванов Ю.Л., Аверкиев Н.С.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Аномальная долговременная деградация фотолюминесценции слоев пористого кремния
Тимохов Д.Ф., Тимохов Ф.П.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Краевая фотолюминесценция монокристаллического кремния с p-n-переходом: структуры, изготовленные с использованием технологии высокоэффективных солнечных элементов
Емельянов А.М.
Физ. и техн. полупроводников , Vol: 45, No: 6 , published: 06 June 2011
Проявление несжимаемых полосок в спектре краевого магнитоплазмона в условиях квантового эффекта Холла
Ханнанов M.Н., Фортунатов А.А., Кукушкин И.В.
Письма в ЖЭТФ, Vol: 93, No: 11-12 , published: 05 June 2011
Transient electroluminescence spikes in small molecular organic light-emitting diodes
Rui Liu, Zhengqing Gan, Ruth Shinar, and Joseph Shinar
Phys. Rev. B: Condens. Matter, Vol: 83, No: 24 , published: 03 June 2011
Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2
Takeaki Sakurai, Keiki Taguchi, Muhammad Monirul Islam, Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Shigeru Niki, and Katsuhiro Akimoto
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Photoluminescence of Cu(In,Ga)Se2 in the Solar Cell Preparation Process
Sho Shirakata, Shinji Yudate, Jyunji Honda, and Naoki Iwado
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Excited States of the A and B Free Excitons in CuInSe2
Michael V. Yakushev, Franziska Luckert, Clement Faugeras, Anatoli V. Karotki, Alexander V. Mudryi, Robert W. Martin
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Photoluminescence Study of AgInS2 by Using Confocal Microscopy System
Umihito Miyamoto, Akinori Sizuki, Kazuhiro Honjo, YongGu Shim, Takahiro Tokuda, Kenji Yoshino, Nazim Mamedov, and Kazuki Wakita
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Optical and Structural Properties of Zn–Cd–Mn–Se Double Quantum Well Systems
Takashi Matsumoto, Kenta Ohmori, Kazuki Kodama, Masao Hishikawa, Sakyo Fukasawa, Fumiaki Iwasaki, Tsutomu Muranaka, and Yoichi Nabetani
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Luminescence Properties of Barium Thio- and Selenogallates Doped with Eu, Ce, and Eu+Ce
Gennadii P. Yablonskii, Vitaly Z. Zubialevich, Eugenii V. Lutsenko, Arif M. Pashaev, Bahadir G. Tagiev, Oktay B. Tagiev, Said A. Abushov
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Analysis of the Enhancing Effect of Rare Earth Ion Co-Doping on the Red Emission of CaGa2S4:Mn2+ in View of Its Decay Time
Akihiro Suzuki, Chiharu Hidaka, Takeo Takizawa, Shigetaka Nomura
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Effect of Ho Co-Doping on the Long Lasting Emission of CaGa2S4:Eu
Chiharu Hidaka and Takeo Takizawa
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 5S2 , published: 26 May 2011
Люминесценция аморфных нанокластеров кремния
Гусев О.Б., Вайнштейн Ю.С., Ундалов Ю.К., Ельцина О.С., Трапезникова И.Н., Теруков Е.И., Сресели О.М.
Письма в ЖЭТФ, Vol: 94, No: 5 , published: 24 May 2011
Терагерцовое излучение, вызванное ванье-штарковской локализацией электронов в естественной сверхрешетке карбида кремния
Санкин В.И., Андрианов А.В., Захарьин А.О., Петров А.Г.
Письма в ЖЭТФ, Vol: 94, No: 5 , published: 24 May 2011
Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells
Sang-Youp Yim, Joon Heon Kim, Mun Seok Jeong, Seung-Han Park, Jongmin Lee
Jpn. J. Appl. Phys., Vol: 50, No: 5R , published: 20 May 2011
Photoluminescence and the exciton-phonon coupling in hydrothermally grown ZnO
R. J. Mendelsberg, M. W. Allen, S. M. Durbin, and R. J. Reeves
Phys. Rev. B: Condens. Matter, Vol: 83, No: 20 , published: 17 May 2011
Высокоэнергетический катионный экситон френкелевского типа и особенности его автолокализации в кристаллической системе CdI2-PbI2
Болеста И.М., Вистовский В.В., Глосковская Н.В., et al.
Физ. тверд. тела, Vol: 53, No: 4 , published: 16 May 2011
Physical properties of sprayed antimony doped tin oxide thin films: The role of thickness
A. R. Babar, S. S. Shinde, A. V. Moholkar, C. H. Bhosale, J. H. Kim and K. Y. Rajpure
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
Characteristics of CdTe nanocrystals synthesized by a Na2TeO3 source
Wang Meiping, Fu Kai  and Lin Jinhui
J. Semicond., Vol: 32, No: 5 , published: 16 May 2011
UV and Visible Electroluminescence From a  Sn:Ga2O3/n+-Si Heterojunction by Metal–Organic Chemical Vapor Deposition
Jun Liang Zhao Xiao Wei Sun Hyukhyun Ryu Swee Tiam Tan
IEEE Trans. Electron Devices , Vol: 58, No: 5 , published: 14 May 2011
Увеличение интенсивности фотолюминесценции и комбинационного рассеяния света в одномерных фотонных кристаллах на основе пористого кремния
Гончар К.А., Мусабек Г.К., Таурбаев Т.И., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Влияние встроенного электрического поля на оптические и электрофизические свойства P-HEMT наногетероструктур AlGaAs/InGaAs/GaAs
Хабибуллин Р.А., Васильевский И.С., Галиев Г.Б., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Спектры электролюминесценции и поглощения полупроводниковых лазеров с низкими оптическими потерями на основе квантово-размерных гетероструктур InGaAs/AlGaAs/GaAs
Слипченко С.О., Подоскин А.А., Пихтин Н.А., et al.
Физ. и техн. полупроводников , Vol: 45, No: 5 , published: 11 May 2011
Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy
Masafumi Jo, Joris. G. Keizer, Takaaki Mano, Paul M. Koenraad,  Kazuaki Sakoda
Appl. Phys. Express, Vol: 4, No: 5 , published: 10 May 2011
Crystallography and cathodoluminescence of ultra-long GaN nanowires
B. Y. Liu, A. M. Wu, F. W. Qin
Cryst. Res. Technol., Vol: 46, No: 5 , published: 06 May 2011
Quantized Auger recombination of biexcitons in CdSe nanorods studied by time-resolved photoluminescence and transient-absorption spectroscopy
Seiji Taguchi, Masaki Saruyama, Toshiharu Teranishi, and Yoshihiko Kanemitsu
Phys. Rev. B: Condens. Matter, Vol: 83, No: 15 , published: 27 April 2011
Observation of dark exciton luminescence from ZnO nanocrystals in the quantum confinement regime
Sekika Yamamoto and Tomobumi Mishina
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 22 April 2011
Резонансный захват дырок в модулированно-легированных структурах n-ALGaAs/GaAs с квантовыми ямами
Яременко Н.Г., Карачевцева М.В., Страхов В.А.
Докл. АН(Россия), Vol: 437, No: 3 , published: 20 April 2011
Электролюминесцентные характеристики светодиодов среднего ИК-диапазона на основе гетероструктур InGaAsSb/GaAlAsSb при высоких рабочих температурах
Петухов А.А., Журтанов Б.Е., Молчанов С.С., et al.
Ж. техн. физ., Vol: 81, No: 4 , published: 17 April 2011
Elementary excitations in charge-tunable InGaAs quantum dots studied by resonant Raman and resonant photoluminescence spectroscopy
Tim Köppen, Dennis Franz, Andreas Schramm, Christian Heyn, Johann Gutjahr, Daniela Pfannkuche, Detlef Heitmann, and Tobias Kipp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 16 , published: 14 April 2011
Перколяция и люминесценция экситонов в двухфазных структурах SiO2/ZnO с большой плотностью и случайным распределением квантовых точек по сферической поверхности
Бондарь Н.В.
Физ. и техн. полупроводников , Vol: 45, No: 4 , published: 12 April 2011
Synthesis and photoluminescence properties of ZnO nanowire arrays
L. C. Zhang,Y. F. Ruan,D. L. Wang,C. X. Qiu
Cryst. Res. Technol., Vol: 46, No: 4 , published: 12 April 2011
Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
Makoto Inagaki, Hidetoshi Suzuki, Akio Suzuki, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 07 April 2011
Excited State Bilayer Quantum Dot Lasers at 1.3 μm
Mohammed A. Majid, David T. D. Childs, Hifsa Shahid, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Tae-Youb Kim, Nae-Man Park, Cheol-Jong Choi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy
Shota Fujisawa, Takuya Sato, Shinjiro Hara, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
Hiroki Nakamoto, Fumitaro Ishikawa, Masahiko Kondow, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Current-Density Dependence of Transient Properties in Green Phosphorescent Organic Light-Emitting Diodes
Hirotake Kajii, Noriyoshi Takahota, Yadong Wang, and Yutaka Ohmori
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Direct Observation of Carrier Behavior Leading to Electroluminescence in Tetracene Field-Effect Transistor
Yuki Ohshima, Hideki Satou, Nobuaki Hirako, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 50, No: 4S , published: 06 April 2011
Учет рассеяния и перепоглощения при анализе спектров люминесценции наночастиц
Кочубей В. И. , Конюхова Ю. Г., Забенков И. В. et al.
Квант. электрон., Vol: 41, No: 4 , published: 03 April 2011
Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted with 73As and 73Ge
K. Johnston, J. Cullen, M. O. Henry, E. McGlynn, and M. Stachura
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 25 March 2011
Luminescence and absorption in germanium and silicon nanocrystals: The influence of compression, surface reconstruction, optical excitation, and spin-orbit splitting
Hans-Christian Weissker, Ning Ning, Friedhelm Bechstedt, and Holger Vach
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 22 March 2011
Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
Bernt Ketterer, Martin Heiss, Marie J. Livrozet, Andreas Rudolph, Elisabeth Reiger, and Anna Fontcuberta i Morral
Phys. Rev. B: Condens. Matter, Vol: 83, No: 12 , published: 21 March 2011
Influence of as on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
Chi-Che Tseng, Shu-Cheng Mai, Wei-Hsun Lin, Shung-Yi Wu, Bang-Ying Yu, Shu-Han Chen, Shih-Yen Lin,Jing-Jong Shyue, Meng-Chyi Wu
IEEE J. Quantum Electron. , Vol: 47, No: 3 , published: 20 March 2011
Blueshifting of Ion-Implanted InGaAs/InGaAsP Multiple Quantum Well Structures Using Two-Step Rapid Temperature Annealing Process
Young Tae Byun, Young-Min Jhon, Sun Ho Kim
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer
Tomoyuki Miyamoto Ryoichiro Suzuki
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer
Tomoyuki Miyamoto, Ryoichiro Suzuki, Tomoyuki Sengoku
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
Ji-Ho Park, Akihiro Wakahara, Hiroshi Okada, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells
Krzysztof Ryczko, Grzegorz Sęk, Marcin Motyka, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Photoluminescence Studies of Porous ZnO Nanorods
Min Su Kim, Kwang Gug Yim, Su Min Jeon, et al.
Jpn. J. Appl. Phys., Vol: 50, No: 3R , published: 18 March 2011
Green Gap Spectral Range Light-Emitting Diodes with Self-Assembled InGaN Quantum Dots Formed by Enhanced Phase Separation
Il-Kyu Park and Seong-Ju Park
Appl. Phys. Express, Vol: 4, No: 4 , published: 18 March 2011
Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates
Shigefusa F. Chichibu, Kouji Hazu, Yuji Kagamitani, Takeyoshi Onuma, Dirk Ehrentraut, Tsuguo Fukuda, and Tohru Ishiguro
Appl. Phys. Express, Vol: 4, No: 4 , published: 17 March 2011
Improved Red Photoluminescence and Ferroelectricity in Layered Composite (Bi,Eu)4Ti3O12/ZnO Thin Films
Xiang Liu, Hong Zhou, Guangheng Wu, and Dinghua Bao
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Optical and Electrical Properties of µ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
Che-Kang Hsu, Jinn-Kong Sheu, Jia-Kuen Wang, Ming-Lun Lee, Kuo-Hua Chang, Shang-Ju Tu, and Wei-Chih Lai
Appl. Phys. Express, Vol: 4, No: 3 , published: 17 March 2011
Structural,optical,electrical and luminescence properties of electron beam evaporated CdSe:In films
Syed Ahamed Basheer M.G./Rajini K.S./Vidhya V.S./et al.
Cryst. Res. Technol., Vol: 46, No: 3 , published: 09 March 2011
Exciton states in shallow ZnSe/(Zn,Mg)Se quantum wells: Interaction of confined and continuum electron and hole states
A. Pawlis, T. Berstermann, C. Brüggemann, M. Bombeck, D. Dunker, D. R. Yakovlev, N. A. Gippius, K. Lischka, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 83, No: 11 , published: 04 March 2011
Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence
D. M. Zayachuk, T. Slobodskyy, G. V. Astakhov, A. Slobodskyy, C. Gould, G. Schmidt, W. Ossau, and L. W. Molenkamp
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 28 February 2011
Determination of the exciton singlet-to-triplet ratio in single-layer organic light-emitting diodes
M. Carvelli, R. A. J. Janssen, and R. Coehoorn
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 23 February 2011
Variation of Chemical and Photoluminescence Properties of Mg-Doped GaN Caused by High-Temperature Process
Eri Ogawa, Tamotsu Hashizume
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 21 February 2011
Upconversion of infrared photons to visible luminescence using InAs-based quantum structures
David M. Tex and Itaru Kamiya
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 17 February 2011
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1-xBix
R. N. Kini, A. J. Ptak, B. Fluegel, R. France, R. C. Reedy, and A. Mascarenhas
Phys. Rev. B: Condens. Matter, Vol: 83, No: 7 , published: 16 February 2011
Kelvin Probe Force Microscopy of Defects in ZnO Nanocrystals Associated with Emission at 3.31 eV
Saidislam Kurbanov, Woo Chul Yang, Tae Won Kang, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
Ming-Hua Lo, Yuh-Jen Cheng, Hao-Chung Kuo, et al.
Appl. Phys. Express, Vol: 4, No: 2 , published: 12 February 2011
Optical phonon scattering of cavity polaritons in an electroluminescent device
A. Delteil, A. Vasanelli, P. Jouy, D. Barate, J. C. Moreno, R. Teissier, A. N. Baranov, and C. Sirtori
Phys. Rev. B: Condens. Matter, Vol: 83, No: 8 , published: 09 February 2011
Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes
Yoshinobu Kawaguchi, Yoshihiko Tani, Pablo O. Vaccaro et al.
Jpn. J. Appl. Phys., Vol: 50, No: 2 , published: 07 February 2011
Optical properties of nitride nanostructures
A. Cantarero, A. Cros, N. Garro, et al.
Annalen der Physik , Vol: 523, No: 1-2 , published: 22 January 2011
I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Ingo Tischer, Martin Feneberg, Martin Schirra, Hady Yacoub, Rolf Sauer, Klaus Thonke, Thomas Wunderer, Ferdinand Scholz, Levin Dieterle, Erich Müller, and Dagmar Gerthsen
Phys. Rev. B: Condens. Matter, Vol: 83, No: 3 , published: 19 January 2011
Observation of Optical Fluorescence of GaN Thin Films in an Inductively-Coupled Plasma Containing High Energy Electrons
Ying Guo, Keiji Nakamura, Jing Zhang, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum
Ah Reum Lee, Hunsoo Jeon, Gang-Seok Lee, et al.
Jpn. J. Appl. Phys., Part 2, Vol: 50, No: 1S1 , published: 19 January 2011
Fabrication of Organic Light-Emitting Diodes Using Photosynthetic Pigments Extracted from Spinach
Naoki Ohtani, Natsuko Kitagawa, Takashi Matsuda
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Solution-Processed Small Molecular Organic Light-Emitting Devices with a Mixed Single Layer
Zhaokui Wang, Shigeki Naka, Hiroyuki Okada
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes with High Electron Mobility
Eun Young Choi, Ji Hyun Seo, Heo Min Kim, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Self-Aligned Organic Light-Emitting Diodes with Color Changing by Ink-Jet Printing Dots
Ryu-ichi Satoh, Shigeki Naka, Miki Shibata, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Enhancement of Electron Injection in Organic Light-Emitting Diodes with Photosensitive Charge Generation Layer
Yuta Okawa, Shigeki Naka, Hiroyuki Okada
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Double-Faced Organic Light-Emitting Device Using Laminate Method
Takahiro Minani, Ryu-ichi Satoh, Hiroyuki Okada, et al.
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering
Ahmed Mohamed Ahmed Abd El-Razek Shamekh, Norio Tokuda, Takao Inokuma
Jpn. J. Appl. Phys., Part 3, Vol: 50, No: 1S2 , published: 18 January 2011
Direct Measurement of the Hole-Nuclear Spin Interaction in Single InP/GaInP Quantum Dots Using Photoluminescence Spectroscopy
E. A. Chekhovich, A. B. Krysa, M. S. Skolnick, and A. I. Tartakovskii
Phys. Rev. Lett., Vol: 106, No: 2 , published: 10 January 2011
Об одной возможности математического моделирования зависимости интенсивности катодолюминесценции от энергии электронов пучка при идентификации параметров полупроводниковых материалов с использованием аппроксимации степенными рядами
Ковтунова Т.И./Михеев Н.Н./Поляков А.Н./Степович М.А.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2010, No: 9 , published: 27 December 2010
Characterization of ZnO nanorods grown on Si substrates coated with NiCl2
Wang Jie/Zhuang Huizhao/Li Junlin/Xu Peng
Cryst. Res. Technol., Vol: 45, No: 9 , published: 16 December 2010
Preparation and photoluminescence properties of AuSix (x=1/2, 1/7) nanoparticles
Huang Lijuan/Wang Lei/Du Jun
Acta opt. sin=Guangxue xuebao , Vol: 30, No: 8 , published: 16 December 2010
Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting diode with a low indium content InGaN shallow step
Kuo C.-H./Fu Y.K./Chi G.C./Chang S.-J.
IEEE J. Quantum Electron. , Vol: 46, No: 3 , published: 16 December 2010
Увеличение эффективности вывода излучения тонкопленочных фотолюминесцентных композитных структур на основе PbSe
Анисимова Н.П., Тропина Н.Э., Тропин А.Н.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Исследование туннельного транспорта носителей в структурах с активной областью InGaN/GaN
Сизов В.С., Неплох В.В., Цацульников А.Ф., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Свободные люминесцирующие слои пористого кремния
Горячев Д.Н., Беляков Л.В., Сресели О.М.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Фотолюминесценция эпитаксиальных слоев CdHgTe, выращенных на подложках Si
Мынбаев К.Д., Баженов Н.Л., Иванов-Омский В.И., et al.
Письма в ЖТФ, Vol: 36, No: 23 , published: 12 December 2010
Фотолюминесценция наногетероструктур на основе CdHgTe
Мынбаев К.Д., Баженов Н.Л., Иванов-Омский В.И., et al.
Письма в ЖТФ, Vol: 36, No: 23 , published: 12 December 2010
Электролюминесценция на длине волны 1.5 мкм в диодных структурах Si : Er/Si, легированных акцепторами Al, Ga, B
Кузнецов В.П., Шмагин В.Б., Марычев М.О., et al.
Физ. и техн. полупроводников , Vol: 44, No: 12 , published: 12 December 2010
Wavelength extended InGaAs/InP photodetector structures with lattice mismatch up to 2.6%
Gu Yi/Li Cheng/Wang Kai/et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 29, No: 2 , published: 10 December 2010
Study on microwave cyclotron resonance of high-mobility GaAs/Al[0.35]Ga[0.65]As two-dimensional electron gas
Yang Wei/Luo Hai-Hui/Qian Xuan/Ji Yang
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 29, No: 2 , published: 10 December 2010
Низкопороговое антистоксово преобразование частоты в микрокристаллах твердых растворов Zn[0.6[Cd[0.4]S с адсорбированными металлоорганическими нанокластерами
Овчинников О.В./Смирнов М.С./Латышев А.Н./и др.
Квант. электрон., Vol: 40, No: 6 , published: 10 December 2010
Антистоксово излучение экситонов в тетраэдрическом наноуглероде
Мащенко В.Е./Пузиков В.М./Семенов А.В./Яминский И.В.
Докл. РАН, Vol: 432, No: 1 , published: 10 December 2010
AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
Gao Hanchao/Wen Cai/Wang Wenxin/et al.
J. Semicond., Vol: 31, No: 5 , published: 03 December 2010
Exciton Luminescence Dynamics in ZnO Crystal Observed under One- and Two-Photon Excitation
Sekika Yamamoto, Hikari Sakuma, Tomobumi Mishina
Jpn. J. Appl. Phys., Vol: 49, No: 12R , published: 01 December 2010
Propagating Wave Packets and Quantized Currents in Coherently Driven Polariton Superfluids
M. H. Szymańska, F. M. Marchetti, and D. Sanvitto
Phys. Rev. Lett., Vol: 105, No: 23 , published: 30 November 2010
Effect of _g-irradiation on the photoluminescence of Cd[1_-x]Zn[x]Te
Glinchuk K.D./Litovschenko N.M./Naseka Yu.M./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Formation of nano-structured CdSe composites in porous SiO[x] layers
Bachrikov Yu.Yu./Indutnyui I.Z./Maidanchuk I.Yu./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Temperature dependence of the photoluminescence of CdTc quantum dots in a polymer matrix
Korbutyak D.V./Kalytchuk S.M./Khalavka Yu.B./et al.
Укр. фiз. ж., Vol: 55, No: 7 , published: 29 November 2010
Atom-resolved luminescence of Si(111)-7_*7 induced by scanning tunneling microscopy
Imada Hiroshi/Ohta Masashi/Yamauto Naoki
Appl. Phys. Express, Vol: 3, No: 4 , published: 26 November 2010
High-quality p-type ZnO films grown by Co-doping of N and Te on Zn-face ZnO substrates
Park Seunghwan/Minegishi Tsutomu/Oh Dongcheol/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Inter-dot distance dependence of photoluminescence properties in CdSe quantum dot systems
Tai Kohei/L~:u Wei/Umezu Ikurou/Sugimura Akira
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers
Shimomoto Kazuma/Kobayashi Atsushi/Ueno Kohei/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
An AlN sacritficial buffer layer inserted into the GaN/patterned sapphire substrate for a chemical lift-off process
Lin Chia-Feng/Dai Jing-Jie/Lin Ming-Shiou/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer
Hirayama Hideki/Tsukada Yusuke/Maeda Tetsutoshi/Kamata Norihiko
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes
Fischer Alec M./Sun Kewei W./Juday Reid/et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
222 nm deep-ultraviolet AlGaN quantum well light-emitting diode with vertical emission properties
Hirayama Hideki/Noguchi Norimichi/Kamata Norihiko
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy
Yang Zheng/Chu Sheng/Chen Winnie V./et al.
Appl. Phys. Express, Vol: 3, No: 3 , published: 26 November 2010
High power blue-violet superluminescent light emitting diodes with InGaN quantum wells
Rossetti Marco/Dorsaz Julien/Rezzonico Raffaele/et al.
Appl. Phys. Express, Vol: 3, No: 6 , published: 26 November 2010
Nonpolar 4H-polytype AlN/AlGaN multiple quantum well structure grown on 4H-SiC(1~-100)
Horita Masahiro/Kimoto Tsunenobu/Suda Jun
Appl. Phys. Express, Vol: 3, No: 5 , published: 26 November 2010
Multifold Enhancement of Quantum Dot Luminescence in Plasmonic Metamaterials
K. Tanaka, E. Plum, J. Y. Ou, T. Uchino, and N. I. Zheludev
Phys. Rev. Lett., Vol: 105, No: 22 , published: 24 November 2010
Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation
Hyunsung Kim\ Dong-Soo Shin\Han-Youl Ryu\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 22 November 2010
Correlation Between Measured Minority-Carrier Lifetime and Cu(In, Ga)Se2 Device Performance
Repins I.L., Metzger W.K., Perkins C.L., et al.
IEEE Trans. Electron Devices , Vol: 57, No: 11 , published: 22 November 2010
Исследование спектров краевой фотолюминесценции эпитаксиальных пленок n-3C-SiC
Лебедев А.А./Абрамов П.Л./Богданова Е.В./и др.
Письма в ЖТФ, Vol: 36, No: 11 , published: 18 November 2010
High-Efficiency Blue and True-Green-Emitting Laser Diodes Bases on Non-c-Plane Oriented GaN Substrates
James W.Raring/Mathew C.Schmidt/Cristiane Poblenz/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
Phase Separation Resalting from Mg Doping in p-lnGaN Film Grown on GaN/Sapphir Template
Liven Sang/Masaki Takeguchi/Woong Lee/et al.
Appl. Phys. Express, Vol: 3, No: 11 , published: 15 November 2010
Energy Barrier Reduction and Exciton Confinement Using an Intermediate Blocking Layer in Organic Light-Emitting Diodes
Jin Woo Park\Jin Young Oh\Hyeon Seok Hwang\et al.
Jpn. J. Appl. Phys., Vol: 49, No: 11R , published: 05 November 2010
Structural and optical properties of Cu2O nanoparticles formed on Al2O3 substrates using spin coating and thermal treatment
Dong Ick Son, Do Hyun Oh, Tae Whan Kim
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Two beam photoluminescence of PbS quantum dots in polyvinyl alcohol
Naresh Babu Pendyala, K.S.R. Koteswara Rao
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Synthesis, characterization and photoluminescence properties of ZnO hexagonal pyramids by the thermal evaporation method
Yu Tian, Hong-Bing Lu, Jin-Chai Li, Yun Wu, Qiang Fu
Physica E, Vol: 43, No: 1 , published: 01 November 2010
Спектр возбуждения и температурная зависимость интенсивности фотолюминесценции кристаллов CaGa2S4:Pr,Ce
Абушов С.А.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 5 , published: 26 October 2010
Formation of TiO2 Nano Pattern on GaN-Based Light-Emitting Diodes for Light Extraction Efficiency
Joong-Yeon Cho/Kyeong-Jae Byeon/Hyoungwon Park/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 10R , published: 25 October 2010
Optical properties of ZnO nanotubes
Zhai Hongju/Zheng Jiahong/Yang Jinghai/et al.
Cryst. Res. Technol., Vol: 45, No: 6 , published: 20 October 2010
Exciton thermalization and state broadening contributions to the photoluminescence of colloidal PbSe quantum dot films from 295 to 4.5 K
Haijun Qiao, Keith A. Abel, Frank C. J. M. van Veggel, and Jeff F. Young
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 20 October 2010
Low-Voltage, Simple-Structure, High-Efficiency p–i–n-Type Electrophosphorescent Blue Organic Light-Emitting Diodes
Jae Hyung Yu/Woo Sik Jeon/Jung Soo Park/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 10R , published: 20 October 2010
Synthesis and optical properties of nanostructured Ce(OH)[4]
Ansari A.A./Kaushik A.
J. Semicond., Vol: 31, No: 3 , published: 13 October 2010
White light photoluminescence from ZnS films on porous Si substrates
Wang Caifeng/Li Qingshan/Hu Bo/Li Weibing
J. Semicond., Vol: 31, No: 3 , published: 13 October 2010
Ligh-current characteristics of vertical-cavity surface-emitting lasers with external optical feedback
Zhang Xing/Ning Yongqiang/Sun Yanfang/et al.
J. Semicond., Vol: 31, No: 3 , published: 13 October 2010
Investigation of Remote-Phosphor White Light-Emitting Diodes with Multi-Phosphor Layers
Yiting Zhu/Nadarajah Narendran
Jpn. J. Appl. Phys., Vol: 49, No: 10R , published: 10 October 2010
Carrier dynamics in InS nanowires grown via chemical vapor deposition
Othonos Andreas/Zervos Matthew
Phys. Status Solidi A, Vol: 207, No: 10 , published: 09 October 2010
Effect of Li{+} codoping on the upconverstion emissions of Er{3+}-doped TiO[2]
Cao Baozheng/Feng Zhiqing/He Yangyang/et al.
Acta opt. sin=Guangxue xuebao , Vol: 30, No: 7 , published: 08 October 2010
Mid-infrared emission properties of Ho{3+} ion in nanocrystals embedded chalcohalide glass ceramics
Zhu Jun/Dai Shixun/Chen Feifei/et al.
Acta opt. sin=Guangxue xuebao , Vol: 30, No: 7 , published: 08 October 2010
Upconversion wihte lighting in Tm{3+}/Ho{3+}/Yb{3+} doped bismuth tellurite glasses
Yu Xiaobo/Wang Naiqin/Zhao Xin/et al.
Acta opt. sin=Guangxue xuebao , Vol: 30, No: 7 , published: 08 October 2010
Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy
Yu. I. Mazur, V. G. Dorogan, D. Guzun, E. Marega, Jr., G. J. Salamo, G. G. Tarasov, A. O. Govorov, P. Vasa, and C. Lienau
Phys. Rev. B: Condens. Matter, Vol: 82, No: 15 , published: 08 October 2010
Initial rise of transient electroluminescence in doped Alq3 films
Uddin A./Lee C.B./Andersson T.G.
Phys. Status Solidi A, Vol: 207, No: 10 , published: 08 October 2010
Evolution of multiple-peak photoluminescence of Ge-doped silicon oxide nanoparticles upon thermal annealing
L. B. Ma, T. Schmidt, C. Jäger, and F. Huisken
Phys. Rev. B: Condens. Matter, Vol: 82, No: 16 , published: 06 October 2010
Effect of strain and variable mass on the formation of antibonding hole ground states in InAs quantum dot molecules
J. Planelles, J. I. Climente, F. Rajadell, M. F. Doty, A S. Bracker, and D. Gammon
Phys. Rev. B: Condens. Matter, Vol: 82, No: 15 , published: 04 October 2010
ZnO nanowire arrays — Pattern generation, growth and applications
Zacharias Margit/Subannajui Kittitat/Menzel Andreas/Yang Yang
Phys. Status Solidi B, Vol: 247, No: 10 , published: 01 October 2010
GaN and ZnO nanostructures
Fundling Sonke/Sokmen Unsal/Behrends Arne/et al.
Phys. Status Solidi B, Vol: 247, No: 10 , published: 01 October 2010
Tailoring the properties of semiconductor nanowires using ion beams
C. Ronning, C. Borschel, S. Geburt, R. Niepelt, S. Müller, D. Stichtenoth, J. -P. Richters, A. Dev, T. Voss, L. Chen, W. Heimbrodt, C. Gutsche and W. Prost
Phys. Status Solidi B, Vol: 247, No: 10 , published: 01 October 2010
Surface effects and nonlinear optical properties of ZnO nanowires
Voss Tobias/Richters Jan-Peter/Dev Apurba
Phys. Status Solidi B, Vol: 247, No: 10 , published: 01 October 2010
Excitonic properties of single CdSe nanowires and coupling to plasmonic nanocavities
Achtseitn Alexander W./Schoeps Oliver/Artemyev Mikhail/Woggon Ulrike
Phys. Status Solidi B, Vol: 247, No: 10 , published: 01 October 2010
Структура и проводимость пленок CdSe, имплантированных селеном с помощью ионного внедрения
Георгобиани А.Н./Левонович Б.Н./Аветисов И.Х.
Неорган. матер., Vol: 46, No: 6 , published: 29 September 2010
Особенности структуры и фотолюминесценция ZnGa[2]S3[4]:Eu{2+}
Георгобиани А.Н./Тагиев Б.Г./Гусейнов Г.Г./и др.
Неорган. матер., Vol: 46, No: 5 , published: 29 September 2010
545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density
Jun-ichi Kasai, Ryouichi Akimoto, Haruhiko Kuwatsuka, et al.
Appl. Phys. Express, Vol: 3, No: 9 , published: 25 September 2010
Anomalous light emission from metal phthalocyanine films on Au(111) acitvated by tunneling-current-induced surface plasmon
Okada Arifumi/Kanazawa Ken/Hayashi Kiwamu/et al.
Appl. Phys. Express, Vol: 3, No: 1 , published: 24 September 2010
Расчет спектров усиления и люминесценции квантово-каскадных лазерных структур с учетом несимметричных контуров уширения линии излучения
Ушаков Д.В./Кононенко В.К./Манак И.С.
Квант. электрон., Vol: 40, No: 3 , published: 22 September 2010
Structure and Ultraviolet Electroluminescence of n -ZnO/SiO2-ZnO Nanocomposite/ p -GaN Heterostructure Light-Emitting Diodes
Miin-Jang Chen, Ying-Tsang Shih, Mong-Kai Wu, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 9 , published: 19 September 2010
Влияние дефектности структуры кристаллов gamma-La2(1-x)Nd2xS3 на их спектроскопические свойства
Мамедов А.А.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Влияние примесей Fe, Cu, Si на формирование спектров излучения в объемных кристаллах ZnO
Мездрогина М.М./Даниловский Э.Ю./Кузьмин Р.В./и др.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Фотолюминесценция в области длин волн 1.5-1.6 мкм слоев кремния с высокой концентрацией кристаллических дефектов
Шкляев А.А./Латышев А.В./Ичикава М.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Особенности спектров самоактивированной люминесценции CdS(O) с позиций теории непересекающихся зон
Морозова Н.К./Данилевич Н.Д.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Упорядоченные массивы нанокристаллов кремния в SiO2: структурные, оптические, электронные свойства
Антонова И.В./Скуратов В.А./Jedrzejewski J./Balberg I.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Влияние низкотемпературных отжигов на фотолюминесценцию кремниевых нанокластерных структур
Романюк Б.Н./Мельник В.П./Попов В.Г./и др.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Светоизлучающие наноструктуры Si, формирующиеся в SiO2
при облучении быстрыми тяжелыми ионами
Качурин Г.А./Черкова С.Г./Скуратов В.А./и др.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Характеристики поверхностных состояний на границе раздела диэлектрик_-полупроводник в тонкопленочных электролюминесцентных структурах на основе ZnS:Mn
Гурин Н.Т./Сабитов О.Ю./Афанасьев А.М.
Физ. и техн. полупроводников , Vol: 44, No: 4 , published: 16 September 2010
Preparation, structure, and photoluminescence properties of Ga[2]O[3]/SnO[2] coaxial nanowires
Jin Changhyun/Kim Hyunsoo/Baek Kyungjoon/et al.
Cryst. Res. Technol., Vol: 45, No: 2 , published: 15 September 2010
Характеристики поверхностных состояний на границе раздела диэлектрик_-полупроводник в тонкопленочных электролюминесцентных излучателях на основе ZnS:Mn
Гурин Н.Т./Сабитов О.Ю./Афанасьев А.М.
Письма в ЖТФ, Vol: 36, No: 1 , published: 14 September 2010
Температурная стабильность фотолюминесценции в гетроструктурах с InGaAs/GaAs квантовой ямой и акцепторным дельта-слоем в GaAs барьере
Дорохин М.В., Данилов Ю.А., Прокофьева М.М., Шолина А.Е.
Письма в ЖТФ, Vol: 36, No: 17 , published: 12 September 2010
Synthesis and properties of PbGeO[3] nanostructures
Wang Ning/Ding Jie/Li Guicun/Peng Hongrui
Cryst. Res. Technol., Vol: 45, No: 3 , published: 10 September 2010
Polarization dependence of absorption and luminescence spectra on each crystal face of α-bithiophene and α-terthiophene
Shibukawa Kenta/Yoshinari Takehisa/Nagasaka Shin-ichiro
Phys. Status Solidi B, Vol: 247, No: 9 , published: 10 September 2010
Effect of annealing on the luminescent characteristics of CdSe quantum dots in a polymer
Pechers'ka K.Yu./Germash L.P./Korsunska N.O./et al.
Укр. фiз. ж., Vol: 55, No: 4 , published: 08 September 2010
Субструктура и люминесценция низкотемпературных гетероструктур AlGaAs/GaAs(100)
Середин П.В./Глотов А.В./Домашевская Э.П./и др.
Физ. и техн. полупроводников , Vol: 44, No: 2 , published: 07 September 2010
Инжекция спина в гетероструктурах с квантовыми ямами GaAs/GaSb
Терентьев Я.В./Торопов А.А./Мельцер Б.Я./и др.
Физ. и техн. полупроводников , Vol: 44, No: 2 , published: 07 September 2010
Видимая фотолюминесценция селективно травленных пористых nc-Si-SiO[x]-структур
Индутный И.З./Михайловская Е.В./Шепелявый П.Е./Данько В.А.
Физ. и техн. полупроводников , Vol: 44, No: 2 , published: 07 September 2010
Высокоэффективные фотоэлементы на основе твердых расторов In[0.53]Ga[0.47]As с изовалентным легированием
Карлина Л.Б./Власов А.С./Кулагина М.М./и др.
Физ. и техн. полупроводников , Vol: 44, No: 2 , published: 07 September 2010
Плазмонное усиление одиночных экситонных переходов в InGaN
Торопов А.А./Беляев К.Г./Кайбышев В.Х./и др.
Изв. РАН. Сер. физ., Vol: 74, No: 1 , published: 07 September 2010
Механизмы рекомбинации носителей заряда в Sb-содержащих лазерных структурах с квантовыми ямами
Воробьев Л.Е./Зерова В.Л./Фирсов Д.А./и др.
Изв. РАН. Сер. физ., Vol: 74, No: 1 , published: 07 September 2010
Temperature dependent lumnescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
Smirnov M.B./Talalaev V.G./Novikov B.V./et al.
Phys. Status Solidi B, Vol: 247, No: 2 , published: 01 September 2010
Exciton states and tunneling in semimagnetic asymmetric double quantum wells
Zaitsev S.V./Brichkin A.S./Tarakanov Yu.A./Bacher G.
Phys. Status Solidi B, Vol: 247, No: 2 , published: 01 September 2010
Проявление метастабильной кубической модификации в мелкодисперсных соединениях A[2]B[6]
Акопян И.Х./Иванова Т.И./Лабзовская М.Э./и др.
Письма в ЖТФ, Vol: 36, No: 5 , published: 01 September 2010
Polarization conversion of excitonic photoluminescence under zero and nonzero magnetic fields in single InAlAs quantum dots
R. Kaji, T. Shindo, S. Adachi, S. Muto
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Optical properties of modulation-doped InGaAs vertically coupled quantum dots
K.Y. Chuang, T.E. Tzeng, David J.Y. Feng, T.S. Lay
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A
T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slab
Shigeru Nakayama, Satoshi Iwamoto, Satomi Ishida, Damian Bordel, Emmanuel Augendre, Laurent Clavelier, Yasuhiko Arakawa
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Midinfrared photoluminescence from SnTe/PbTe/CdTe double quantum wells grown by molecular beam epitaxy
Kazuto Koike, Ryou Kawaguchi, Mitsuaki Yano
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Exciton transport by moving strain dots in GaAs quantum wells
S. Lazić, P.V. Santos, R. Hey
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Photoluminescence properties of exciton–exciton scattering in a GaAs/AlAs multiple quantum well
M. Nakayama, T. Hirao, T. Hasegawa
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Upconversion of photoluminescence due to subband resonances in a GaAs/AlAs multiple quantum well structure
Takayuki Hasegawa, Satoshi Okamoto, Masaaki Nakayama
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices
R. Kido, A. Satake, K. Fujiwara
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wells
K. Fujiwara, A. Satake, N. Takata, U. Jahn, E. Luna, H.T. Grahn
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Thermal escape process of photogenerated carriers from GaAs single-quantum-well contained in GaAs/AlAs superlattices
A. Satake, T. Tanigawa, Y. Tanaka, K. Fujiwara
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
T. Kawazu, T. Mano, T. Noda, H. Sakaki
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Growth of multi-stacked InAs/GaNAs quantum dots grown with As2 source in atomic hydrogen-assisted molecular beam epitaxy
Ayami Takata, Ryuji Oshima, Yasushi Shoji, Kouichi Akahane, Yoshitaka Okada
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method
N. Kumagai, S. Ohkouchi, S. Nakagawa, M. Nomura, Y. Ota, M. Shirane, Y. Igarashi, S. Yorozu, S. Iwamoto, Y. Arakawa
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition
Y. Terai, K. Yamaoka, K. Yoshida, T. Tsuji, Y. Fujiwara
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation
Y. Terai, T. Tsuji, K. Noda, Y. Fujiwara
Physica E, Vol: 42, No: 10 , published: 01 September 2010
Vacancy-mediated room-temperature ferromagnetism in Zn1−xMnxO thin films
Gopalakrishnan N./Balakrishnan L./Srimathy B./et al.
Phys. Status Solidi A, Vol: 207, No: 9 , published: 01 September 2010
Nondestructive visualization of individual dislocations in 4H-SiC epilayers by micro photoluminescence mapping
Feng Gan, Suda Jun, Kimoto Tsunenobu
Jpn. J. Appl. Phys., Vol: 49, No: 9R , published: 01 September 2010
Stress and defect distribution of thick GaN film homoepitaxially regrown on free-standing GaN by hydride vapor phase epitaxy
Chen Kuei-Ming, Yeh Yen-Hsien, Wu Yin-Hao et al.
Jpn. J. Appl. Phys., Vol: 49, No: 9R , published: 01 September 2010
Optical propeties of silicon nanowires fabricated by electroless silver deposition
Toda Satoru, Oishi Tetsuji, Yoshioka Takuma, Okuno Tsuyoshi
Jpn. J. Appl. Phys., Vol: 49, No: 9R , published: 01 September 2010
Time-resolved X-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption
Kakuda Naoki, Kaizu Toshiyuki, Takahashi Masamitu et al.
Jpn. J. Appl. Phys., Vol: 49, No: 9R , published: 01 September 2010
(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width
Kolbe Tim/Sembdner Toni/Knauer Arne/et al.
Phys. Status Solidi A, Vol: 207, No: 9 , published: 01 September 2010
Codoped spacer ratio effect on electroluminescence characteristics of hybrid white organic light-emitting diodes for reduced efficiency roll-off
Seo Ji Hoon, Park Jung Sun, Lee Seok Jae et al.
J. Supercomput., Vol: 49, No: 9R , published: 01 September 2010
Enhanced optical output power of tunnel junction GaN-based light emitting diodes with transparent conducting Al and Ga-codoped ZnO thin films
Kim Tae Hoon, Ju Young-Gu, Park Lee Soon et al.
Jpn. J. Appl. Phys., Vol: 49, No: 9R , published: 01 September 2010
Highly uniform characteristics of GaN nanorods grown on Si(111) by metalorganic chemical vapor deposition
Ra Yong-Ho, Navamathavan Rangaswamy, Park Ji-Hyeon et al.
Jpn. J. Appl. Phys., Vol: 49, No: 9R , published: 01 September 2010
Экситоны и фотолюминесценция в нанокристаллах ZnO и Zn0,99Mn0,01O
Груздев Н.Б., Соколов В.И., Ермаков А.Е. и др.
Ж. эксперим. и теор. физ., Vol: 138, No: 2 , published: 30 August 2010
High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
You-Da Lin, Shuichiro Yamamoto, Chia-Yen Huang, et al.
Appl. Phys. Express, Vol: 3, No: 8 , published: 24 August 2010
Electroluminescence From Ferromagnetic Fe-Doped ZnO Nanorod Arrays on p-Si
Bo Ling, Jun Liang Zhao, Xiao Wei Sun, et al.
IEEE Trans. Electron Devices , Vol: 57, No: 8 , published: 22 August 2010
Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity
Dimastrodonato Valeria/Mereni Lorenzo O./Young Robert J./Pelucchi Emanuele
Phys. Status Solidi B, Vol: 247, No: 8 , published: 21 August 2010
Фотопроводимость и люминесценция кристаллов GaSe при высоких уровнях оптического возбуждения
Кязым-заде А.Г./Салманов В.М./Салманова А.А./и др.
Физ. и техн. полупроводников , Vol: 44, No: 3 , published: 10 August 2010
Сенсибилизация излучения и механизмы миграции электронных возбуждений в структурах на основе III-нитридов, легированных редкоземельными элементами (Eu, Er, Sm)
Мездрогина М.М./Даниловский Э.Ю./Кузьмин Р.В.
Физ. и техн. полупроводников , Vol: 44, No: 3 , published: 10 August 2010
Влияние радиационного воздействия на люминесцентные свойства низкоразмерных гетероструктур SiGe/Si(001)
Новиков А.В./Яблонский А.Н./Платонов В.В./и др.
Физ. и техн. полупроводников , Vol: 44, No: 3 , published: 10 August 2010
Форма рельефа гетерограниц в (311)А-ориентированных структурах GaAs/AlAs
Гуляев Д.В./Журавлев К.С.
Физ. и техн. полупроводников , Vol: 44, No: 3 , published: 10 August 2010
Напряженные структуры GaAsSb/GaAs с квантовыми ямами для лазеров диапазона 1.3 мкм
Садофьев Ю.Г./Samal N./Андреев Б.А./и др.
Физ. и техн. полупроводников , Vol: 44, No: 3 , published: 10 August 2010
Диодные структуры Si:Er/Si для наблюдения электролюминесценции на длине волны 1.5 мкм при 300 К
Кузнецов В.П./Кузнецов М.В./Красильник З.Ф.
Физ. и техн. полупроводников , Vol: 44, No: 3 , published: 10 August 2010
Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
Kazunobu Kojima, Atsushi A. Yamaguchi, Mitsuru Funato, Yoichi Kawakami, and Susumu Noda
Jpn. J. Appl. Phys., Vol: 49, No: 8R , published: 01 August 2010
Photoluminescence Analysis of Deep Acceptor in CdTe Films on GaAs(100) Substrates
Chikara Onodera, Masaaki Yoshida, and Tsunemasa Taguchi
Jpn. J. Appl. Phys., Vol: 49, No: 8R , published: 01 August 2010
Green Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin Coating of Terbium Organic Compounds on Silicon
Takashi Ohzone, Toshihiro Matsuda, Souta Hase, Shingo Nohara, and Hideyuki Iwata
Jpn. J. Appl. Phys., Vol: 49, No: 8R , published: 01 August 2010
Temperature dependence of photoluminescence from ordered GaInP[2] epitaxial layers
Prutskij T./Pelosi C.
Cryst. Res. Technol., Vol: 45, No: 1 , published: 27 July 2010
Инженерия дефектов в имплантационной технологии кремниевых светоизлучающих структур с дислокационной люминесценцией
Соболев Н.А.
Физ. и техн. полупроводников , Vol: 44, No: 1 , published: 27 July 2010
Динамика фотолюминесцнеции и рекомбинационные процессы в Sb-содержащих лазерных наноструктурах
Фирсов Д.А./Shterengas L./Klpshidze G./и др.
Физ. и техн. полупроводников , Vol: 44, No: 1 , published: 27 July 2010
Природа излучения пористого кремния, полученного химическим травлением
Корсунская Н.Е./Стара Т.Р./Хоменкова Л.Ю./и др.
Физ. и техн. полупроводников , Vol: 44, No: 1 , published: 27 July 2010
Детектирование синглетного кислорода, образующегося при фотовозбуждении нанокристаллов пористого кремния, методом фотолюминесценции
Гонгальский М.Б./Константинова Е.А./Осминкина Л.А./Тимошенко В.Ю.
Физ. и техн. полупроводников , Vol: 44, No: 1 , published: 27 July 2010
Электролюминесценция в гетероструктурах II типа p-InAs/AlSb/InAsSb/AlSb/0(n)-GaSb с глубокими квантовыми ямами на гетерогранице
Михайлова М.П./Иванов Э.В./Моисеев К.Д./и др.
Физ. и техн. полупроводников , Vol: 44, No: 1 , published: 27 July 2010
Формирование полупроводниковых 3D наноструктур на основе ZnSe
Алышев С.В./Забежайлов А.О./Миронов Р.А./и др.
Физ. и техн. полупроводников , Vol: 44, No: 1 , published: 27 July 2010
Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
Atsushi Tackeuchi, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, and Sotaro Izumi
Jpn. J. Appl. Phys., Vol: 49, No: 7R , published: 25 July 2010
Electroluminescence Characterization of (2021) InGaN/GaN Light Emitting Diodes with Various Wavelengths
Roy B. Chung, You-Da Lin, Ingrid Koslow, Nathan Pfaff, Hiroaki Ohta, Junseok Ha, Steven P. DenBaars, and Shuji Nakamura
Jpn. J. Appl. Phys., Vol: 49, No: 7R , published: 25 July 2010
Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates
Chikara Onodera, Masaaki Yoshida, and Tsunemasa Taguchi
Jpn. J. Appl. Phys., Vol: 49, No: 7R , published: 22 July 2010
Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper
Minoru Nakamura and Susumu Murakami
Jpn. J. Appl. Phys., Vol: 49, No: 7R , published: 22 July 2010
Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique
Krajewski Tomasz A./Dybko Krzystrof/Luka Grzegorz/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Optical characterization of nitrogen- and antimony-doped ZnO thin layers grown by MOVPE
Haneche Nadia/Lusson Alain/Sartel Corinne/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
Peres M./Neves A.J./Monteiro T./et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Surface morphology and photoluminescence studies of Sb-doped ZnO layers grown using MOCVD
Sartel Corinne/Haneche Nadia/Jomard Francois/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Morphological and optical studies of self-forming ZnO nanocolumn and nanocone arrays grown by PLD on various substrates
Peres M./Soares M.J./Neves A.J./et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt Richard/Kirste Lutz/Passow Thorsten/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
High quality In[x]Ga[1_-x]N thin films with x > 0.2 grown on silikon
Ghersoiu I./Yu K.M./Reichertz L.A./et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO[2] substrates
Mauder C./Wang K.R./Reuters B./et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Enhancent in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
Soh C.B./Dai K.H./Liu W./et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Spectra and energy levels of Eu3+ in cubic phase Gd[2]O[3]
Smith Eric R./Gruber John B./Wellenius Patrick/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Effects related to deposition temperature of ZnCoO films grown by atomic layer deposition _- uniformity of Co distribution, structural, optical, electrical and magnetic properties
Lukasiewicz Malgorzata/Witkowski Bartlomiej/Godlewski Marek/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Preparation of trichromatic quantum dots: source of white light
Yue Yang, Ge Mei-Ying, Sun Yan, et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 29, No: 6 , published: 26 June 2010
Спектрально-люминесцентные свойства комплексов, образованных одноименно заряженными CdTe квантовыми точками и молекулами тетрасульфофталоцианина
Орлова А.О./Губанова М.С./Маслов В.Г./и др.
Оптика и спектроскопия, Vol: 108, No: 6 , published: 22 June 2010
Фотофизические проявления взаимодействия квантовых точек с молекулами орто-фенантролина
Орлова А.О./Адрианов В.Е./Маслов В.Г./и др.
Оптика и спектроскопия, Vol: 108, No: 6 , published: 22 June 2010
Особенности флуоресценции полупроводниковых квантовых стержней CdSe/ZnS в многокомпонентных растворах, содержащих пентилцианобифенил
Данилов В.В./Баранов А.В./Ельяшевич Г.К./и др.
Оптика и спектроскопия, Vol: 108, No: 6 , published: 22 June 2010
Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals
Minoru Nakamura and Susumu Murakami
Jpn. J. Appl. Phys., Vol: 49, No: 6R , published: 15 June 2010
Observation of Complex Optical Processes in ZnSe under Extreme Optical Excitation from a Kilojoule-Class Nd:Glass Laser
Tomoharu Nakazato, Yusuke Furukawa, Toshihiko Shimizu, Marilou Cadatal-Raduban, Elmer Estacio, Nobuhiko Sarukura, Akiyuki Shiroshita, Kazuto Otani, Toshihiko Kadono, Keisuke Shigemori, and Hiroshi Azechi
Jpn. J. Appl. Phys., Vol: 49, No: 6R , published: 15 June 2010
Structural and Optical Properties of Nonpolar AlN(1120) Films Grown on ZnO(1120) Substrates with a Room-Temperature GaN Buffer Layer
Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
Jpn. J. Appl. Phys., Vol: 49, No: 6R , published: 15 June 2010
Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model
Abdoli Esmaeil/Haratizadeh Hamid
Phys. Status Solidi B, Vol: 247, No: 1 , published: 09 June 2010
Growth and characterization of telecommunication-wavelength quantum dots using Bi as a surfactang
Okamoto Hiroshi/Tawra Takehiko/Gotoh Hideki/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 6S , published: 03 June 2010
Optical polarization anisotropy of nonpolar InN epilayers
Wang K./Yamaguchi T./Takeda A./et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Laterally overgrown GaN/InGaN multi-quantum well heterostructures: electrical and optical properties
Polyakov Alexander/Govorkov Anatoliy/Smirnov Nikolay/et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Polarization dependences of absorption and luminescence spectra on each crystal face of α-quaterthiphene and α-quinquethiophene
Tanaka Shin/Katano Yoshitaka/Kimura Yuki/et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Ultraviolet electroluminescence emission from n-type ZnO/p-type Si corssed nanowire light-emitting diodes
Kim Kwangeun/Kang Jeongmin/Lee Myeongwon/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 6S , published: 03 June 2010
Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE
Nishikawa Atsushi/Kawasaki Takashi/Furukawa Naoki/et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2 (100) substrates
Liu Bin/Han Ping/Xie Zili/et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K
Kalden J./Tessarek C./Sebald K./et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Effect of depp-level states on current-voltage characteristics and electroluminescence of blue and UV light-emitting diodes
Nana R./Gnanachchelvi P./Awaah M.A./et al.
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors
Chevtchenko Serguei/Brunner Frank/Wurfl Joachim/Trankle Gunther
Phys. Status Solidi A, Vol: 207, No: 6 , published: 03 June 2010
Вплив обробки у парах HF на структуру та люмiнесцентнi властивостi поруватих Si/SiOx нанокомпозитiв
Данько В.А., Злобин С.О., Iндутный I.З. и др.
Укр. фiз. ж., Vol: 55, No: 9 , published: 31 May 2010
Инжекционная электролюминесценция в квантово-размерных структурах InGaAs/GaAs с контактом металл/поолупроводник и металл/оксид/полупроводник
Дорохин М.В./Демина П.Б./Байдусь Н.В./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2010, No: 5 , published: 29 May 2010
Проявление коллективных эффектов в поляризационно-разрешенных спектрах рекомбинационного излучения с полностью заполненного нулевого уровня Ландау двумерных электронов
Соловьев В.В., Кукушкин И.В., Шмульт Ш.
Письма в ЖЭТФ, Vol: 92, No: 9-10 , published: 29 May 2010
Люминесцентные свойства полупроводниковых композитных систем, состоящих из молекул трифталоцианина эрбия и щелевой кремниевой структуры, в ближней ИК-области
Белогорохов И.А., Мамичев Д.А., Пушкарев В.Е. и др.
Письма в ЖЭТФ, Vol: 92, No: 9-10 , published: 29 May 2010
Temperature dependence of radiative recombination
Zaitsev S.V., Kummell T., Bacher G., Hommel D.
Письма в ЖЭТФ, Vol: 92, No: 1-2 , published: 28 May 2010
Low temperature synthesis of CdSe quantum dots with amine derivative and their chemical kinetics
Hwang Seongmi/Choi Youngmin/Jeong Sunho/et al.
Jpn. J. Appl. Phys., Part 2, Vol: 49, No: 5S1 , published: 26 May 2010
Well width dependence of band gap renormalization of single ZnO/MgZnO quantum well
Li Xiaolong, Jiang Xiaofang, Lei Xiaoyan et al.
Acta opt. sin=Guangxue xuebao , Vol: 30, No: 10 , published: 26 May 2010
Temperature dependence of photoluminescence in layered semiconductor n-GaS doped with Sn
Shigetomi Shigeru/Ikari Tetsuo
Jpn. J. Appl. Phys., Vol: 49, No: 5R , published: 18 May 2010
Photoluminescence characteristics of organic host materials with wide energy gaps for organic electrophosphorescent devices
Endo Ayataka/Adachi Chihaya
Jpn. J. Appl. Phys., Vol: 49, No: 5R , published: 18 May 2010
Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
Yoshikawa Akihiko/Wang Xinqiang/Ishitani Yoshihiro/Uedono Akira
Phys. Status Solidi A, Vol: 207, No: 5 , published: 06 May 2010
Investigation of InN layers grown by molecular beam epitaxy on GaN templates
Vilalta-Clemente A./Mutta G.R./Chauvat M.P./et al.
Phys. Status Solidi A, Vol: 207, No: 5 , published: 06 May 2010
New twists in LEDs and HFETs based on nitride semiconductors
Leach J.H./Ni X./Lee J./et al.
Phys. Status Solidi A, Vol: 207, No: 5 , published: 06 May 2010
Электронно-дырочная жидкость и экситоннные молекулы в квазидвумерных SiGe-слоях гетероструктур 1800 ГПа
Бурбаев Т.М., Гордеев М.Н., Лобанов Д.Н., и др.
Письма в ЖЭТФ, Vol: 92, No: 5-6 , published: 01 May 2010
Enhanced luminescence efficiency of InGaN/GaN multiple quantum wells by a strain relief layer and proper Si doping
Tsai Ping-Chieh/Su Yan-Kuin/Chen Wen-Ray/Huang Chun-Yuan
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 April 2010
Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy
Yoshimura Masatoshi/Tomioka Katsuhiro/Hiruma Kenji/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 April 2010
Thermal analysis of InGaN/GaN multiple quantum well light emitting diodes with different mesa sizes
Lee Hee Kwan/Yu Jae Su
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 April 2010
Indium-doped MgxZn1—xO films for ZnO-based heterojunction diodes
Tsuboi Takako/Yamamoto Kenji/Nakamura Atsushi/Temmyo Jiro
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 April 2010
Enhanced room-temperatrue 1.6 μm electroluminescence from Si-based double-heterostructure light-emitting diodes using iron disilicide
Suzuno Mitsushi/Koizumi Tomoaki/Kawakami Hideki/Suemasu Takashi
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 4S , published: 19 April 2010
First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells
Krishnan Balakrishnan, Vinod Adivarahan, Qhalid Fareed, Mohamed Lachab, Bin Zhang, and Asif Khan
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Optical and Dielectric Properties of Transparent Epitaxial GdVO4/n-GaN/Sapphire Heterostructure
Ye-Sul Jeong, Kyun Ahn, Se-Young Jeong, Soon-Gil Yoon, Hyun-Gyu Kim, Jong-Pil Kim, Hyeong-Soo Ahn, Hong-Seung Kim, and Chae-Ryong Cho
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process
Ryosuke Kubota, Toshiharu Saiki, Philippe Regreny, Aziz Benamrouche, and Michel Gendry
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Electron-Bombardment-Induced Damage to Organic Light Emission Layer
Hao Lei, Yoichi Hoshi, Meihan Wang, Takayuki Uchida, Shinichi Kobayashi, and Yutaka Sawada
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Effect of H2 carrier gas on the growth of GaN nanowires on Si(111) substrates by metalorganic chemical vapor deposition
Ra Yong-Ho/Navamathavan Rangaswamy/Cha Jun-Ho/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Optical properties of InAs quantum dot array ensemblies with predetrmined lateral sizes from 20 to 40 nm
Uccelli Emanuele/Waller Laura/Bichler Max/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Improved Eu luminexcence properties in Eu-doped GaN grown on GaN substrates by organometallic vapor phase epitaxy
Kasai Hitoshi/Nishikawa Atsushi/Kawasaki Takashi/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process
Ryosuke Kubota, Toshiharu Saiki, Philippe Regreny, Aziz Benamrouche, and Michel Gendry
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Ratio effect of codoped spacer on electroluminescent characteristics of hybrid white organic light-emitting diodes
Seo Jin Hoon/Park Jung Sun/Koo Ja Ryong/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 4R , published: 15 April 2010
Photoluminescence measurement of Er,O-codoped GaAs under a pulsed magnetic field up to 60 T
H. Ohta, O. Portugall, N. Ubrig et al.
J. Low Temp. Phys., Vol: 159, No: 1/2 , published: 01 April 2010
Временная зависимость эффекта Ханле в излучении триплетных связанных экситонов в селениде галлия
Старухин А.Н./Нельсон Д.К./Разбирин Б.С.
Письма в ЖЭТФ, Vol: 138, No: 4 , published: 29 March 2010
Rapid, low-temperature synthesis of β-SiC nanowires from Si and graphite
Zhu Hui-Ling/Han Fu-Dong/Lun Ning/et al.
J. Am. Ceram. Soc. , Vol: 93, No: 9 , published: 25 March 2010
Влияние дефектов, образованных быстрыми реакторными нейтронами, на экситонные спектры люминесценции монокристаллов сульфида кадмия
Давидюк Г.Е./Богданюк Н.С./Божко В.В./и др.
Физ. и техн. полупроводников , Vol: 44, No: 9 , published: 25 March 2010
Температурные свойства люминесценции экситонов из квантовых ям CdTe различной толщины в структуре CdTe/CdMnTe
Агекян В.Ф./Серов А.Ю./Степанов А.Ю./и др.
Физ. тверд. тела, Vol: 52, No: 10 , published: 25 March 2010
Влияние скорости нарастания индукции на спектральные характеристики люминесценции ZnS:Mn при обработке его магнитным полем
Бачериков Ю.Ю.
Физ. тверд. тела, Vol: 52, No: 8 , published: 25 March 2010
Спектры комбинационного рассеяния света и горячей люминесценции квантовых проволок Zn[1_-x]Mn[x]Te
Виноградов В.С./Заварицкая Т.Н./Karcezewski G./и др.
Физ. тверд. тела, Vol: 52, No: 8 , published: 25 March 2010
Дифференциальный метод анализа спектров люминесценции полупроводников
Емельянов А.М.
Физ. и техн. полупроводников , Vol: 44, No: 9 , published: 25 March 2010
Исследование бызызлучательной рекомбинации в кремниевых светодиодах с краевой люминесценцией методом наведенного тока (EBIC)
Якимов Е.Б./Соболев Н.А.
Физ. и техн. полупроводников , Vol: 44, No: 9 , published: 25 March 2010
Highly stacked and high-quality quantum dots fabricated by intermittent deposition of InGaAs
Sugaya Takeyoshi/Amano Takeru/Mori Masahiko/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 3R , published: 18 March 2010
Excitation processes of photoluminescence and origin of absorption peak shift in ZnO porous films modified with Eu ions
Yamamoto Aishi/Noritake Masashi/Harumoto Yoshiyuki/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 3R , published: 18 March 2010
Band offsets and photoluminescence thermal quenching im mid-infrared emitting GaInAsSb quantum wells with quinary AlGaInAsSb barriers
Sek Grzegorz/Motyka Marcin/Ryczko Krzysztof/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 3R , published: 18 March 2010
Study of ion-beam-induced damage and luminescence properties in terbium-implanted AlGaN
Park Ji-Ho/Wakahara Akihiro/Okada Hiroshi/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 3R , published: 18 March 2010
High-brightness 350 nm ultraviolet InAlGaN light emitting diodes on Si(111) substrate with transparent AlN/AlGaN buffer structure
Fukushima Yasuyuki/Ueda Tetsuzo
Jpn. J. Appl. Phys., Vol: 49, No: 3R , published: 18 March 2010
Electrolumenescence analysis by tilt polish technique of InP-based semiconductor lasers
Ichikawa Hiroyuki/Sasaki Kouichi/Hamada Kotaro/Yamaguchi Akira
Jpn. J. Appl. Phys., Vol: 49, No: 3R , published: 18 March 2010
Lead sulfide quantum dots formation in glasses controlled by erbium ions
Shim Sang Min/Liu Chao/Kwon Yong Kon/Heo Jong
J. Am. Ceram. Soc. , Vol: 93, No: 10 , published: 11 March 2010
Microstructure, morphology, and ultraviolet emission of zinc oxide nanopolycrystalline films by the modified successive ionic layer adsorption and reaction method
Zhang Daoli/Zhang Jianbing/Wu Qiming/Miao Xiangshui
J. Am. Ceram. Soc. , Vol: 93, No: 10 , published: 11 March 2010
Ultraviolet emission and electrical properties of aluminum-doped zinc oxide thin films with preferential C-asis orientation
Zhang Daoli/Zhang Jianbing/Wu Qiming/Miao Xiangshui/et al.
J. Am. Ceram. Soc. , Vol: 93, No: 10 , published: 11 March 2010
Оптические свойства четверных полупроводниковых твердых растворов GayAsyP1-x-y
Егоров А.Ю./Крыжановская Н.В./Пирогов Е.В./Павлов М.М.
Физ. и техн. полупроводников , Vol: 44, No: 7 , published: 10 March 2010
Зависимость спектров фотолюминесценции эпитаксиальных слоев твердого раствора P1-xEuxTe (0= < qx <= q0.1) от условий выращивания
Пашкеев Д.А./Селиванов Ю.Г./Felder F./Засавицкий И.И.
Физ. и техн. полупроводников , Vol: 44, No: 7 , published: 10 March 2010
Whispering gallery modes in zinc oxide micro- and nanowires
Czekalla Christian/Nobis Thomas/Rahm Adnreas/et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Optical and photothermal investigations of Zn[1_-x_-y]Be[x]Mn[y]Se solid solutions
Firszt Franciszek/Strzalkowski Karol/Zakrzewski Jacek/et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Radiative recombination dynamics of CdSe/Zn(S,Se)/MgS quantum dots up to room temperature
Zaitsev S.V./Arians R./Kummell T./et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
65 years of ZnO research _- old and very recent results
Klingshirn Claus/Fallert J./Zhou H./et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Optically detected magnetic resonance in CdMnSe/ZnSe submonolayer quantum wells
Tolmachev D.O./Babunts R.A./Romanov N.G./et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Mn{2+}-assisted recombination of trions in semimagnetic quantum dots
Chernenko A.V./Brichkin A.S./Sokolov S.V./Ivanov S.V.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Spin properties of trions in a dense 2DEG
Kochreshko V./Besombes L./Mariette H./et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Fine structure of emission lines from charged CdSe/ZnSe/ZnMnSe quantum dots
Chekhovich E.A./Brichkin A.S./Kulakovskii V.D./et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Preparation, structure and photoluminescence properties of SiO2- coated ZnS nanowires
Jin Changhyun/Lee Jungkeun/Baek Kyungjoon/Lee Chongmu
Cryst. Res. Technol., Vol: 45, No: 10 , published: 03 March 2010
Туннельно-инжекционные структуры InGaAs с наномостиками: перенос возбуждения и кинетика люминесценции
Талалаев В.Г./Сеничев А.В./Новиков Б.В./и др.
Физ. и техн. полупроводников , Vol: 44, No: 8 , published: 03 March 2010
Исследование механизмов фото- и электролюминесценции в квантово-размерных гетероструктурах InSb/InAs
Терентьев Я.В./Мухин М.С./Соловьев В.А./и др.
Физ. и техн. полупроводников , Vol: 44, No: 8 , published: 03 March 2010
Фотолюминесценция нитрозамещенных фталоцианинов европия (III)
Зиминов А.В./Полевая Ю.А./Юрре Т.А./и др.
Физ. и техн. полупроводников , Vol: 44, No: 8 , published: 03 March 2010
Интерференционные эффекты в спектрах электроотражения и электролюминесценции светодиодных гетероструктур InGaN/AlGaN/GaN
Авакянц Л.П./Боков П.Ю./Червяков А.В./и др.
Физ. и техн. полупроводников , Vol: 44, No: 8 , published: 03 March 2010
The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
Thonke K./Schirra M./Schneider R./et al.
Phys. Status Solidi B, Vol: 247, No: 6 , published: 03 March 2010
Atom-resolved luminescence of Si(111)-7_*7 induced by scanning tunneling microscopy
Imada Hiroshi/Ohta Masashi/Yamamoto Naoki
Appl. Phys. Express, Vol: 3, No: 4 , published: 25 February 2010
Unstrained GaAs quantum dashes grown on GaAs(001) substrates by droplet epitaxy
Jo Masafumi/Mano Takaaki/Sakoda Kazuaki
Appl. Phys. Express, Vol: 3, No: 4 , published: 25 February 2010
Theory of carrier and photon dynamics in quantum dot light emitters
Dachner Matthias-Rene/Malic Ermin/Richter Marten/et al.
Phys. Status Solidi B, Vol: 247, No: 4 , published: 22 February 2010
Спиновые явления в полупроводниках: физика и приложения
Кусраев Ю.Г.
Успехи физ. наук, Vol: 180, No: 7 , published: 21 February 2010
Повышение яркости электролюминофора плазмохимическим модифицированием сырья
Огурцов К.А./Сычев М.М./Ерузин А.А./и др.
Неорган. матер., Vol: 46, No: 11 , published: 21 February 2010
Структурные и электролюминесцентные свойства гетеропереходов n-ZnO/p-GaN:Mg
Рогозин И.В./Георгобиани А.Н./Котляревский М.Б./Дацкевич Н.П.
Неорган. матер., Vol: 46, No: 11 , published: 21 February 2010
Weak-carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {2021} GaN substrates
Funato Mitsuru/Kaneta Akio/Kawakami Yoichi/et al.
Appl. Phys. Express, Vol: 3, No: 2 , published: 16 February 2010
Dual-color emission in hybrid III-nitride/ZnO light emitting diodes
Namkoong Gon/Trybus Elaissa/Cheung Maurice C./et al.
Appl. Phys. Express, Vol: 3, No: 2 , published: 16 February 2010
Излучение и энергетическая релаксация экситонов в квантовых точках с разупорядоченными интерфейсами, выращенных в низкодиэлектрической матрице
Бондарь Н.В.
Оптика и спектроскопия, Vol: 108, No: 5 , published: 16 February 2010
Люминесценция кристаллов Cr{2+}:A{II}B{VI} в халькогенидных волоконных световодах в среднем ИК диапазоне
Миронов Р.А./Караксина Э.В./Забежайлов А.О./и др.
Квант. электрон., Vol: 40, No: 9 , published: 15 February 2010
Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
Shuhaimi Bin Abu Bakar Ahmad/Watanabe Arata/Egawa Takashi
Jpn. J. Appl. Phys., Vol: 49, No: 2R , published: 14 February 2010
Strain effects of exciton transition in CdTe films on GaAs(100) substrates
Onodera Chikara/Yoshida Masaaki/Taguchi Tsunemasa
Jpn. J. Appl. Phys., Vol: 49, No: 2R , published: 14 February 2010
Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells
Funato Mitsuru/Ueda Masaya/Inoue Daisuke/et al.
Appl. Phys. Express, Vol: 3, No: 7 , published: 14 February 2010
Fine structure due to donor-acceptor pair luminescence in compensated Si
Tajima Michio/Iwai Takaaki/Toyota Hiroyuki/et al.
Appl. Phys. Express, Vol: 3, No: 7 , published: 14 February 2010
Mechanism on effect of surface plasmons coupling with InGaN/GaN quantum wells: enhancement and suppression of photoluminescence intensity
Huang Zengli/Wang Jianfeng/Liu Zhenghui/et al.
Appl. Phys. Express, Vol: 3, No: 7 , published: 14 February 2010
What is the longest lasing wavelength of InAs/InP (100) quantum dots grown by metal organic vapor phase epitaxy?
Kotani Junji/van Veldhoven Peter J./N~:otzel Richard
Appl. Phys. Express, Vol: 3, No: 7 , published: 14 February 2010
High-efficiency InGaN-based Yellow-Green light-emitting diodes
Lai Mu-Jen/Jeng Ming-Jer/Chang Liann-Be
Jpn. J. Appl. Phys., Vol: 49, No: 2R , published: 14 February 2010
Double photonic quasi-crystal structure effect on GaN-based vertical-injection light-emitting diodes
Huang Hung-Wen/Lin Chung-Hsiang/Huang Zhi-Kai/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 2R , published: 14 February 2010
Demonstration of AlGaN-based deep-ultraviolet light-emitting diodes on high-quality AlN templates
Sakai Yusuke/Zhu Youhua/Sumiya SHigeaki/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 2R , published: 14 February 2010
222 nm deep-ultraviolet AlGaN quantum well light-emitting diode with veritcal emission properties
Hirayama Hideki/Noguchi Norimichi/Kamata Norihiko
Appl. Phys. Express, Vol: 3, No: 3 , published: 14 February 2010
Передачи энергии от Ce{3+}KEu{2+} в кристаллах SrGa[2]S[4]
Абушов С.А.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 30, No: 2 , published: 11 February 2010
Исследования оптических и структурных свойств короткопериодных сверхрешеток InGaN/GaN для активной области светоизлучающих диодов
Крыжановская Н.В./Лундин В.В./Николаев А.Е./и др.
Физ. и техн. полупроводников , Vol: 44, No: 6 , published: 10 February 2010
Особенности люминесценции и электропроводимости селенида цинка при фото- и рентгеновском возбуждении
Дегода В.Я./Софиенко А.А.
Физ. и техн. полупроводников , Vol: 44, No: 5 , published: 10 February 2010
Зависимость порога стимулированной люминесценции нанокристаллов ZnO от их геометрической формы
Грузинцев А.Н./Редькин А.Н./Бартхоу К.
Физ. и техн. полупроводников , Vol: 44, No: 5 , published: 10 February 2010
Оптические свойства нанопористого кремния, пассивированного железом
Шевченко О.Ю./Горячев Д.Н./Беляков Л.В./Сресели О.М.
Физ. и техн. полупроводников , Vol: 44, No: 5 , published: 10 February 2010
Люминесцентные и структурные свойства пленок ZnO-Ag
Хомченко В.С./Кушниренко В.И./Папуша В.П./и др.
Физ. и техн. полупроводников , Vol: 44, No: 5 , published: 10 February 2010
Polarization properties of columnar quantum dots: effects of aspect ratio and compositional contrast
Ridha Philipp/Li Lianhe H./Mexis Meletios/et al.
IEEE J. Quantum Electron. , Vol: 46, No: 1-2 , published: 10 February 2010
Characteristics of an AlGaInP-based light emitting diode with an indium-tin-oxide (ITO) direct ohmic contact structure
Liu Yi-Jung/Yen Chih-Hung/Yu Kuo-Hui/et al.
IEEE J. Quantum Electron. , Vol: 46, No: 1-2 , published: 10 February 2010
UV electroluminescence and structure of n-ZnO/p-GaN heterojunction LEDs grown by atomic layer deposition
Chen Hsing-Caho/Chen Miin-Jang/Wu Mong-Kai/et al.
IEEE J. Quantum Electron. , Vol: 46, No: 1-2 , published: 10 February 2010
Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment
Luo Suning/Kohiki Shigemi/Okada Koichi/et al.
Phys. Status Solidi A, Vol: 207, No: 2 , published: 02 February 2010
Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states
J. Mickevičius, E. Kuokštis, V. Liuolia, G. Tamulaitis, M. S. Shur, J. Yang, R. Gaska
Phys. Status Solidi A, Vol: 207, No: 2 , published: 02 February 2010
Simultaneous stress and defect luminescence study on silicon
Gundel Paul/Schubert Martin C./Warta Wilhelm
Phys. Status Solidi A, Vol: 207, No: 2 , published: 02 February 2010
Природа краевой люминесценции диффузионных слоев CdTe:Mg
Махний В.П./Косоловский В.В./Слетов М.М./и др.
Физ. и техн. полупроводников , Vol: 44, No: 9 , published: 26 January 2010
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
Tyagi Anurag/Farrell Robert M./Kelchner Kathryn M./et al.
Appl. Phys. Express, Vol: 3, No: 1 , published: 24 January 2010
Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {20‾21} GaN substrates
Kyono Takashi/Yoshizumi Yusuke/Enya Yohei/et al.
Appl. Phys. Express, Vol: 3, No: 1 , published: 24 January 2010
Линейно поляризованная фотолюминесценция ансамбля вюрцитных GaN/AlN квантовых точек
Александров И.А./Журавлев К.С./Мансуров В.Г./Хольтц П.
Письма в ЖЭТФ, Vol: 91, No: 9-10 , published: 18 January 2010
Localization dynamics of biexcitons and electron-hole plasmas in GaN-based mixed crystals
Hirano Daisuke/Tayagaki Takeshi/Yamada Yoichi/Kanemitsu Yoshihiko
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Whispering gallery mode in periodic InGaN-based hexagonal nanoring arrays grown by rf-MBE using Ti-mask selective-area growth
Kouno Tetsuya/Kishino Katsumi/Kikuchi Akihiko
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Microstructural, electrical, magnetic and spectroscopic properties of PbO—Sb2O3—As2O3:MnO glass ceramics
Padmanabham A./Satyanarayana T./Gandhi Y./Veeraiah N.
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Saturation of luminescence from Si nanocrystal embedded in SiO2
Timmerman D./Izeddin I./Gregorkiewicz T.
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Initial charge carrier dynamics in porous silicon revealed by time-resolved fluorescence and transient reflectivity
Juska Gediminas/Medvids Arturs/Gulbinas Vidmantas
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate
Trivellin N./Meneghini M./Zanoni E./et al.
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes
Kishwar S./ul Hasan K./Tzamalis G./et al.
Phys. Status Solidi A, Vol: 207, No: 1 , published: 16 January 2010
Influence of the interfacial chemical environment on the luminescence of 3C   SiC nanoparticles
Yu. Zakharko, J. Botsoa, S. Alekseev, V. Lysenko, J.-M. Bluet, O. Marty, V. A. Skryshevsky, G. Guillot
J. Appl. Phys. , Vol: 107, No: 1 , published: 15 January 2010
Origin of the near-band-edge luminescence in MgxZn1−xO alloys
Alexander Müller, Marko Stölzel, Christof Dietrich, Gabriele Benndorf, Michael Lorenz, Marius Grundmann
J. Appl. Phys. , Vol: 107, No: 1 , published: 15 January 2010
In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties
A. Urbańczyk, G. J. Hamhuis, R. Nötzel
J. Appl. Phys. , Vol: 107, No: 1 , published: 15 January 2010
Enhancement of light emission from silicon nanocrystals by post-O2-annealing process
Byoung Youl Park, Sol Lee, Kyoungwan Park, Chang Hyun Bae, Seung Min Park
J. Appl. Phys. , Vol: 107, No: 1 , published: 15 January 2010
Combined electron backscatter diffraction and cathodoluminescence measurements on CuInS2/Mo/glass stacks and CuInS2 thin-film solar cells
D. Abou-Ras, U. Jahn, M. Nichterwitz, T. Unold, J. Klaer, H.-W. Schock
J. Appl. Phys. , Vol: 107, No: 1 , published: 15 January 2010
Effects of excitation power and temperature on photoluminescence from stacking faults in 4H-SiC epilayers
Nakamura Mitsutaka/Yoshimoto Masahiro
Jpn. J. Appl. Phys., Vol: 49, No: 1R , published: 10 January 2010
Structural, compositional, and optical characterizations of vetically alligned AlAs/GaAs/GaP heterostructure nanowires epitaxially grown on Si substrate
Zhang Guoqiang/Tateno Kouta/Gotoh Hideki/et al.
Jpn. J. Appl. Phys., Vol: 49, No: 1R , published: 10 January 2010
Примесная терагерцовая люминесценция при межзонной фотовозбуждении полупроводников
Андрианов А.В./Захарьин А.О./Иванов Ю.Л./Кипа М.С.
Письма в ЖЭТФ, Vol: 91, No: 1-2 , published: 08 January 2010
Теоретический анализ статического тушения оптических возбуждений в люминесцирующих наночастицах
Басиев Т.Т./Басиева И.Т./Глушков Н.А.
Письма в ЖЭТФ, Vol: 91, No: 5-6 , published: 08 January 2010
Миграция возбуждений ионов Mn2+1 в кристалле Cd0.5M0.5Te
Васильев Н.Н.
Оптика и спектроскопия, Vol: 108, No: 1 , published: 07 January 2010
Усиление флуоресценции пористого кремния при насыщении жидким кристаллом
Пирятинский Ю.П./Долгов Л.А./Ярощик О.В./и др.
Оптика и спектроскопия, Vol: 108, No: 1 , published: 07 January 2010
Characterization of gain-narrowed emission from biphenyl-capped thiophene single crystals
Matsuoka Naoki/Haramatsu Toru/Yanagi Hisao/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 1S , published: 05 January 2010
Evaluation of reliability in rubrene-based organic light emitting devices with a mixed single layer
Wang Zhaokui/Okada Hiroyuki/Naka Shigeki
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 1S , published: 05 January 2010
Organic light-emitting field-effect transistor with channel waveguide structure
Shigee Yuki/Yanagi Hisao/Terasaki Kohei/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 49, No: 1S , published: 05 January 2010
n-ZnO/n-GaAs heterostructured white light-emitting diode: nanoscale interface analysis and electroluminescences studies
Tan S.T./Zhao J./Iwan S./et al.
IEEE Trans. Electron Devices , Vol: 57, No: 1 , published: 02 January 2010
GaN quantum dots grown on silicon for free-standing membrane photonic structures
Sergent Sylvain/Moreno Jean-Christophe/Frayssinet Eric/et al.
Appl. Phys. Express, Vol: 2, No: 5 , published: 30 December 2009
Улучшение излучательных характеристик в структурах со сверхрешетками InAs/GaSn/iNgAaSn
Мамутин В.В.
Письма в ЖТФ, Vol: 35, No: 8 , published: 26 December 2009
Коллективные моды ансамблей квантовых точек в микрорезонаторах
Аверкиев Н.С./Глазов М.М./Поддубный А.Н.
Ж. эксперим. и теор. физ., Vol: 135, No: 5 , published: 26 December 2009
Идентификация рекомбинирующих центров в широкозонных кристаллах и наноструктурах на их основе по спин-зависимому туннельному послесвечению
Бабунц Р.А./Романов Н.Г./Толмачев Д.О./и др.
Физ. тверд. тела, Vol: 51, No: 12 , published: 26 December 2009
Спектры люминесценции гексагональных форм карбида кремния в мозаичных пленках, полученных методом твердотельной эпитаксии
Компан М.Е./Аксянов И.Г./Кулькова И.В./и др.
Физ. тверд. тела, Vol: 51, No: 12 , published: 26 December 2009
Зависимость кинетики рекомбинации пространственно разделенных электрон-дырочных слоев от параллельного магнитного поля
Россохатый А.В./Кукушкин И.В.
Письма в ЖЭТФ, Vol: 89, No: 9-10 , published: 25 December 2009
Structural and optical characteristics of crystalline silicon carbide nanoparticles synthesized by carbothermal reduction
Kim Kwang Joo/Lee Suengho/Lee Jung Han/et al.
J. Am. Ceram. Soc. , Vol: 92, No: 2 , published: 24 December 2009
Свойства монокристаллов CdSe, активированных селеном с помощью ионной имплантации
Георгобиани А.Н./Левонович Б.Н.
Неорган. матер., Vol: 45, No: 6 , published: 24 December 2009
Люминесценция слоев оксида цинка, полученных методом изовалентного замещения на подложках селенида цинка
Махний В.П./Слетов М.М./Хуснутдинов С.В.
Изв. вузов. Физ., Vol: 52, No: 2 , published: 24 December 2009
Optical, photocatalytic properties of novel CuS nanoplate-based architectures synthesised by a solvothermal route
Li Fei/Bi Wentuan/Kong Tao/King Qinghua
Cryst. Res. Technol., Vol: 44, No: 7 , published: 24 December 2009
Влияние отжига на оптические и фотэлектрические свойства гетероэпитаксиальных структур CxHg1-xTe для среднего инфракрасного диапазона
Ижнин А.И./Ижнин И.И./Мынбаев К.Д./и др.
Письма в ЖТФ, Vol: 35, No: 3 , published: 20 December 2009
Влияние параллельного магнитного поля на спектр рекомбинационного излучения пространственно разделенных электрон-дырочных слоев
Россохатый А.В./Кукушкин И.В.
Письма в ЖЭТФ, Vol: 89, No: 1-2 , published: 20 December 2009
Образование кластеров и перколяционного порога в двухфазной системе со случайным распределением квантовых точек ZnSe
Бондарь Н.В.
Физ. низ. температур, Vol: 35, No: 3 , published: 19 December 2009
Fabrication and optical properties of thin silica-coated CdSe/ZnS quantum dots
Sun Ye/Masia Francesco/Langbein Wolfgang/Borri Paola
Phys. Status Solidi A, Vol: 206, No: 12 , published: 19 December 2009
Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3 Powder
Kim Tae Ki/Kim Seung Hwan/Yang Seong Seok/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 19 December 2009
Флуоресцирующие нитевидные комплексы полупроводниковых наночастиц с полиаллиламином
Кулакович О.С./Стрекаль Н.Д./Лютич А.А./Маскевич С.А.
Ж. прикл. спектроскопии, Vol: 76, No: 3 , published: 16 December 2009
Исследование формирования квантовых точек InGaN на поверхности GaN
Гончаров В.В./Корытов М.Н./Брунков П.Н./и др.
Изв. РАН. Сер. физ., Vol: 73, No: 1 , published: 11 December 2009
Фазовые переходы в неравновесных электронно-дырочных системах наногетероструктур Si/SiGe/Si
Бурбаев Т.М./Зайцев В.В./Курбатов В.А./и др.
Изв. РАН. Сер. физ., Vol: 73, No: 1 , published: 11 December 2009
Оптические активные центры иона Er{3+} в структурах Si/Si[1_-x]Ge[x] в условиях сильного оптического возбуждения
Красильникова Л.В./Байдакова Н.А./Степихова М.В./и др.
Изв. РАН. Сер. физ., Vol: 73, No: 1 , published: 11 December 2009
Структурные и люминесцентные свойства пленок ZnO:P, полученных отжигом подложек ZnP2 в атомарном кислороде
Рогозин И.В.
Физ. и техн. полупроводников , Vol: 43, No: 1 , published: 11 December 2009
Инфракрасная люминесценция в термообработанном кремнии
Болотов В.В./Кан В.Е.
Физ. и техн. полупроводников , Vol: 43, No: 1 , published: 11 December 2009
Излучательная рекомбинация в матрице CdMgTe с ультратонкими узкозонными слоями CdMnTe
Агекян В.Ф./Серов А.Ю./Степанов Ю.А./и др.
Физ. и техн. полупроводников , Vol: 43, No: 1 , published: 11 December 2009
Doped nanoparticles for optoelectronics applications
Godlewski M./Wolska E./Yatsunenko S./et al.
Физ. низ. температур, Vol: 35, No: 1 , published: 11 December 2009
Отрицательная циркулярная поляризация люминесценции квантовых точек InP. Механизм формирования и основные закономерности
Игнатьев И.В./Вербин С.Ю./Герловин И.Я./и др.
Оптика и спектроскопия, Vol: 106, No: 3 , published: 11 December 2009
Излучательные свойства квантовых ям GaAs/InGaAs с барьером GaAs, _d-легированным атомами Mn
Вихрова О.В./Данилов Ю.А./Демина П.Б./и др.
Изв. РАН. Сер. физ., Vol: 73, No: 1 , published: 11 December 2009
Электролюминесценция горячих носителей заряда в режиме спонтанного и стимулированного излучения из лазерных наноструктур и поглощение ИК-излучения горячими электронами в квантовых ямах
Воробьев Л.Е./Зерова В.Л./Фирсов Д.А./и др.
Изв. РАН. Сер. физ., Vol: 73, No: 1 , published: 11 December 2009
Влияние сегрегационных эффектов на спектры электролюминесценции квантово-размерных гетероструктур InGaAs/GaAs, полученных методом МОС-гидридной эпитаксии
Акчурин Р.Х./Андреев А.Ю./Берлинер Л.Б./и др.
Физ. и техн. полупроводников , Vol: 43, No: 1 , published: 11 December 2009
Люминесцентные свойства твердых растворов системы Cd-In-Te
Один И.Н./Чукичев М.В./Гапанович М.В./и др.
Неорган. матер., Vol: 45, No: 7 , published: 11 December 2009
Влияние легирования Eu на сенсибилизацию излучения в структурах с квантовыми ямами GaAs/AlGaAs и InGaN/GaN
Криволапчук В.В./Мездрогина М.М./Кузьмин Р.В./Даниловский Э.Ю.
Физ. тверд. тела, Vol: 51, No: 2 , published: 10 December 2009
Краевая электролюминесценция монокристаллического кремния при температуре 80 К: структуры на основе высокоэффективного солнечного элемента
Емельянов А.М.
Физ. тверд. тела, Vol: 51, No: 2 , published: 10 December 2009
Светодиоды "теплового" белого свечения на основе p_-n-гетероструктур типа InGaN/AlGaN/GaN, покрытых люминоформами из иттрий-гадолиниевых гранатов
Сощин Н.П./Гальчина Н.А./Коган Л.М./и др.
Физ. и техн. полупроводников , Vol: 43, No: 5 , published: 10 December 2009
Температурная зависимость внутренних параметров дисковых лазерных диодов InAs/InAsSbP
Кабанов В.В./Лебедок Е.В./Рябцев А.Г./и др.
Физ. и техн. полупроводников , Vol: 43, No: 4 , published: 09 December 2009
Антистоксова люминесценция микрокристаллов твердых растворов Zn[0,75]Cd[0,25]S, подвергнутых отжигу в присутствии кислорода
Овчинников О.В./Смирнов М.С./Косякова Е.А./и др.
Физ. и техн. полупроводников , Vol: 43, No: 3 , published: 09 December 2009
Светоизлучающая диодная линейка (_l=3.7 мкм) на основе InGaAsSb
Закгейм А.Л./Зотова Н.В./Ильинская Н.Д./и др.
Физ. и техн. полупроводников , Vol: 43, No: 4 , published: 09 December 2009
Мощные лазеры (_l=808 нм) на основе гетероструктур раздельного ограничения AlGaAs/GaAs
Андреев А.Ю./Зорина С.А./Лешко А.Ю./и др.
Физ. и техн. полупроводников , Vol: 43, No: 4 , published: 09 December 2009
Исследование особенностей рабочих характеристик многокомпонентных гетероструктур и светоизлучающих диодов на основе AlInGaN
Рабинович О.И./Сушков В.П.
Физ. и техн. полупроводников , Vol: 43, No: 4 , published: 09 December 2009
GaInAs/GaIn(AlGaInP-лазеры, излучающие на длине волны 808 нм, выращенные методом МОС-гидридной эпитаксии
Алуев А.В./Лешко А.Ю./Лютецкий А.В./и др.
Физ. и техн. полупроводников , Vol: 43, No: 4 , published: 09 December 2009
Влияние параметров Ge(Si)/Si(001) самоформирующихся островков на их электролюминесценцию при комнатной температуре
Лобанов Д.Н./Новиков А.В./Кудрявцев К.Е./и др.
Физ. и техн. полупроводников , Vol: 43, No: 3 , published: 09 December 2009
Визуализация связанных фотонных мод наностержней ZnO при помощи растровой катодолюминесценции
Грузинцев А.Н./Емельяченко Г.А./Редькин А.Н./и др.
Физ. и техн. полупроводников , Vol: 43, No: 4 , published: 09 December 2009
Study of structure and optical luminescence of C+6 (80 MeV) ion irradiated CdS: Fe system
Tripathi Balram/Vijay Y.K./Singh F./Avasthi D.K./Wate S.
Indian J. Phys., Vol: 83, No: 12 , published: 08 December 2009
Люминесценция кристаллов CaGa[2]Se[4]:Eu
Тагиев Б.Г./Абушов С.А./Тагиев О.Б.
Ж. прикл. спектроскопии, Vol: 76, No: 1 , published: 04 December 2009
Температурные зависимости интенсивности фотолюминесценции и времени жизни возбужденных состояний ионов Eu{2+} в EuGa[2]S[4] и EuGa[2]S[4]:Er{3+}
Георгобиани А.Н./Тагиев Б.Г./Тагиев О.Б./и др.
Неорган. матер., Vol: 45, No: 2 , published: 02 December 2009
Излучательная рекомбинация в гетероструктурах второго типа ZnSe/BeTe при высокой плотности свободных носителей
Зайцев С.В.
Ж. эксперим. и теор. физ., Vol: 135, No: 4 , published: 01 December 2009
Ultrahigh-purity undoped GaAs epitaxial layers prepared by liquid phase epitaxy
Kayastha Madhu Sudan/Matsunami Ikuo/Sapkota Durga Parsad/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 12R , published: 01 December 2009
Epitaxial ZnO thin films on a-plane sapphire substrates grown by ultrasonic spray-assisted mist chemical vapor deposition
Nishinaka Hiroyuki/Kamada Yudai/Kameyama Naoki/Fujita Shizuo
Jpn. J. Appl. Phys., Vol: 48, No: 12R , published: 01 December 2009
Light-emitting characteristics of organic light-emitting diodes with Ba/Al cathode and effect of Ba thickness by measuring their built-in potential
Lim Jong Tae/Yeom Geun Young
Jpn. J. Appl. Phys., Vol: 48, No: 12R , published: 01 December 2009
Growth of GaN layer and characterization of light-emitting diode using random-cone patterned sapphire substrate
Okada Narihito/Murata Tohru/Tadatomo Kazuyuki/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 12R , published: 01 December 2009
Динамика магнитоиндуцированного оптического выстраивания триплетных связанных экситонов в селениде галлия в условиях резонансного возбуждения
Старухин А.Н./Нельсон Д.К./Разбирин Б.С.
Письма в ЖЭТФ, Vol: 89, No: 3-4 , published: 25 November 2009
Фотолюминесценция монокристаллов CuInS[2], выращенных методом направленной кристаллизации и из газовой фазы
Мудрый А.В./Короткий А.В./Якушев М.В./Мартин Р.
Ж. прикл. спектроскопии, Vol: 76, No: 2 , published: 24 November 2009
Low temperature hydrothermal growth and optical properties of ZnO nanorods
Yang J.H./Zheng J.H./Zhai H.J./Yang L.L.
Cryst. Res. Technol., Vol: 44, No: 1 , published: 20 November 2009
Photoluminescence of ZnSe nanocrystals at high excitation level
Tishchenko V.V./Kovalenko A.V.
Физ. низ. температур, Vol: 35, No: 5 , published: 20 November 2009
Synthesis, structural and optical properties of well dispersed anatase TiO[2] nanoparticles by non-hydrothermal method
Dennis Christy P./Nirmala Jothi N.S./Melikechi N./Sagayaraj P.
Cryst. Res. Technol., Vol: 44, No: 5 , published: 19 November 2009
Properties of Co-doped ZnO films prepared by electrochemical deposition
Wang Y.X./Ding X./Cheng Y./et al.
Cryst. Res. Technol., Vol: 44, No: 5 , published: 19 November 2009
Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes
Park Seoung-Hwan/Ahn Doyeol/Koo Bun-Hei/Kim Jong-Wook
Phys. Status Solidi A, Vol: 206, No: 11 , published: 17 November 2009
Получение нанокристаллов CdSe, легированного медью
Тананаев П.Н./Дорофеев С.Г./Васильев Р.Б./Кузнецова Т.А.
Неорган. матер., Vol: 45, No: 4 , published: 16 November 2009
Explanation of Photon Correlations in the Far-Off-Resonance Optical Emission from a Quantum-Dot–Cavity System
Martin Winger, Thomas Volz, Guillaume Tarel, Stefano Portolan, Antonio Badolato, Kevin J. Hennessy, Evelyn L. Hu, Alexios Beveratos, Jonathan Finley, Vincenzo Savona, and Ataç Imamoğlu
Phys. Rev. Lett., Vol: 103, No: 20 , published: 12 November 2009
Model of Fluorescence Intermittency of Single Colloidal Semiconductor Quantum Dots Using Multiple Recombination Centers
Pavel A. Frantsuzov, Sándor Volkán-Kacsó, and Bolizsár Jankó
Phys. Rev. Lett., Vol: 103, No: 20 , published: 11 November 2009
Relationship between current transport and electroluminescence in Si+-implanted SiO2 thin films
Liang Ding/Chen T.P./Ming Yang/et al.
IEEE Trans. Electron Devices , Vol: 56, No: 11 , published: 11 November 2009
Определение изменений ширины запрещенной зоны непрямозонных полупроводников по спектрам краевой люминесценции
Емельянов А.М.
Письма в ЖТФ, Vol: 35, No: 6 , published: 09 November 2009
Synthesis of tunable 3D ZnO architectures assemblied with nanoplates
Zuo Ahui/Hu Peng/Bai Liuyang/Yuan Fangli
Cryst. Res. Technol., Vol: 44, No: 6 , published: 09 November 2009
Structural and photoluminescence properties of GaN/ZnO core-shell nanowires with their shells sputtered
Kim Hyoun Woo/Kim Hyo Sung/Kebede Mesfin Abayneh/et al.
Cryst. Res. Technol., Vol: 44, No: 6 , published: 09 November 2009
Гетероэпитаксиальные пленки соединений A{III}B{V} на подложках и буферных слоях фианита
Бузынин Ю.Н./Дроздов М.Н./Бузынин А.Н./и др.
Изв. РАН. Сер. физ., Vol: 73, No: 4 , published: 06 November 2009
Room-temperature growth of UV-emitting dendritic GaN fractal nanostructures using photochemical vapor depostion
Yamazaki Shunsuke/Yatsui Takashi/Ohtsu Motoichi
Appl. Phys. Express, Vol: 2, No: 3 , published: 06 November 2009
Structural evolution and visible photoluminescence of Zn_-ZnO nanophosphor
Ghosh Avijit/Choudhary R.N.P.
Phys. Status Solidi A, Vol: 206, No: 3 , published: 02 November 2009
The role of Coulomb interaction in photoinduced thermally stivulted current and luminescence in organic semiconducting polymers
Kadashchuk A./Vakhnin A./Von Seggern H./Scherf U.
Укр. фiз. ж., Vol: 54, No: 1-2 , published: 02 November 2009
Люмiнесценцiя та енергетична релаксацiя локалiзованих екситонiв у квантових точках CdS, вирощених в низькодiелектричнiй матрицi
Бондар М.В./Бродин М.С.
Укр. фiз. ж., Vol: 54, No: 1-2 , published: 02 November 2009
InGaN/GaN light-emitting diode on concave-hexagonal-patterned sapphire substrate
Han Nam/Kim Hyung Gu/Kim Hee Yun/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 11R , published: 01 November 2009
Photoluminescence and reflectance spectra of CdTe films on GaAs(100) substrates
Onodera Chikara/Yoshida Masaaki/Taguchi Tsunemasa
Jpn. J. Appl. Phys., Vol: 48, No: 11R , published: 01 November 2009
Exciton photoluminescence from CdTe/ZnTe single quantum wells grown by hot wall epitaxy
Watanabe Katsuyoshi
Jpn. J. Appl. Phys., Vol: 48, No: 11R , published: 01 November 2009
Temperature-dependent excitonic luminescence in ZnO thin film grown by metal organic chemical vapor deposition
Lee Yueh-Chien/Hu Sheng-Yao/Feng Zhe-Chuan/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 11R , published: 01 November 2009
Suitable property of nuckel plate for adiabatic transition part in solenoid-induced wiggler
Ohigashi Nobuhisa/Tsunawaki Yoshiaki/Asakawa Makoto R.
Jpn. J. Appl. Phys., Vol: 48, No: 11R , published: 01 November 2009
Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure
Liu Xiang/Wei Fuxiang/Liu Hui
J. Semicond., Vol: 30, No: 4 , published: 29 October 2009
Поглощение, спектры возбуждения люминесценции и инфракрасного пропускания кристаллов ZnS(O)-ZnSe(O) в модели непересекающихся зон
Морозова Н.К./Мидерос Д.А./Данилевич Н.Д.
Физ. и техн. полупроводников , Vol: 43, No: 2 , published: 23 October 2009
Люминесценция квантовых точек CdSe/ZnS, инфильтрованных в опаловую матрицу
Грузинцев А.Н./Емельченко Г.А./Масалов В.М./и др.
Физ. и техн. полупроводников , Vol: 43, No: 2 , published: 23 October 2009
Angle-Resolved Photoluminescence Spectrum of the Exciton Condensate in Electron-Hole Semiconductor Bilayers
Jinwu Ye, Tao Shi, and Longhua Jiang
Phys. Rev. Lett., Vol: 103, No: 17 , published: 23 October 2009
Preparation, characterization and thermally stimulated luminescence of ZnO nanophosphor
Manam J./Das S./Isaac A.
Indian J. Phys., Vol: 83, No: 10 , published: 21 October 2009
Влияние отжига на катодолюминесценцию монокристаллов синтетического цинкита
Карипидис Т.К./Чукичев М.В./Мальцев В.В./и др.
Неорган. матер., Vol: 45, No: 1 , published: 16 October 2009
Nanostructing-induced modification of optical properties of p-GaAs(100)
Naddaf M./Saloum S.
Physica E, Vol: 41, No: 10 , published: 11 October 2009
Формирование и оптические свойства полупроводниковых нанокристаллов CdSSe в матрице силикатного стекла
Ушаков В.В./Аронин А.С./Караванский В.А./Гиппиус А.А.
Физ. тверд. тела, Vol: 51, No: 10 , published: 07 October 2009
Photoluminescence of a Quantum Dot Hybridized with a Continuum of Extended States
L. M. León Hilario and A. A. Aligia
Phys. Rev. Lett., Vol: 103, No: 15 , published: 06 October 2009
Spin-polarized localized exciton photolumenescence dynamics in GaInNAs quantum wells
Lu Shulong/Nosho Hidetaka/Tackeuchi Atsushi/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 10R , published: 02 October 2009
Enhancement of electrical and optical properties of silicon quantum dot light-emitting diodes with ZnO doping layer
Kim Baek Hyun/Davis Robert F./Cho Chang-Hee/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 10R , published: 02 October 2009
Effect of growth interreption im migration enhanced epitaxy on InAs/GaAs quantum dots
Ryu Sung-Pil/Cho Nam-Ki/Lim Ju-Young/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 9R , published: 25 September 2009
Effect of modified growth method on the sturctural and optical properties of InAs/GaAs quantum dots for controlling density
Ryu Sung-Pil/Cho Nam-Ki/Lim Ju-Young/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 9R , published: 25 September 2009
Al2O3 Powder Coating and Surface Texturing for High Efficiency GaN-Based Light Emitting Diodes
Kim Seung Hwan/Kim Tae Ki/Yang Seong Seok/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 9R , published: 25 September 2009
Формирование спектральных характеристик наногетероструктур на основе Cd[x]Hg[1_-x]Te (x=0,2_-0,4)
Горн Д.И./Войцеховский А.В./Ижнин И.И.
Изв. вузов. Физ., Vol: 52, No: 12, 2 , published: 16 September 2009
Видимая фотолюминесценция пленок ZnO, сформированных электрохимическим методом на кремниевых подложках
Чубенко Е.Б./Бондаренко В.П./Balucani M.
Письма в ЖТФ, Vol: 35, No: 24 , published: 15 September 2009
The intercalation of PbI[2] with 2,2'-bipyridine evidenced by photoluminescence, FT-IR and Ramn spectroscopy
Preda N./Mihut L./Baibarac M./et al.
Rom. J. Phys., Vol: 54, No: 7-8 , published: 08 September 2009
280 nm deep ultraviolet light emitting diode lamp with an AlGaN multiple quantum well activr region
Adivarahan Vinod/Heidari Ahamd/Zhang Bin/et al.
Appl. Phys. Express, Vol: 2, No: 10 , published: 08 September 2009
Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography
Suk Chung; Johnson, S.R.; Ding Ding; Yong-Hang Zhang; Smith, D.J.; McCartney, M.R.
IEEE Trans. Electron Devices , Vol: 56, No: 9 , published: 01 September 2009
Photoluminescence in chemically deposited (Cd-Zn)S:CdCl[2], Ho/Tb films prepared at room temperature
Bhushan Shashi/Pillai Sandhya
Fizika. A, Vol: 18, No: 1-4 , published: 31 August 2009
Модуляция мощности краевой фотолюминесценции монокристаллического кремния изменением напряжения на p-n-переходе
Емельянов А.М.
Письма в ЖТФ, Vol: 35, No: 18 , published: 24 August 2009
Optically Tunable Spontaneous Raman Fluorescence from a Single Self-Assembled InGaAs Quantum Dot
G. Fernandez, T. Volz, R. Desbuquois, A. Badolato, and A. Imamoglu
Phys. Rev. Lett., Vol: 103, No: 8 , published: 21 August 2009
Особенности рекомбинационных процессов в светодиодах на основе InGaN/GaN при больших плотностях инжекционного тока
Аверкиев Н.С./Левиштейн М.Е./Петров П.В./и др.
Письма в ЖТФ, Vol: 35, No: 19 , published: 16 August 2009
Investigation of the spectral triplet in strongly cuopled quantum dot-nanocavity system
Ota Yasutomo/Kumagai Naoto/Ohkouchi Shunsuke/et al.
Appl. Phys. Express, Vol: 2, No: 12 , published: 10 August 2009
Fourier transformed photoreflectance and photoluminescence of mid infrared GaSb-based type II quantum wells
Motyka Marcin/Sek Grzegorz/Misiewicz Jan/et al.
Appl. Phys. Express, Vol: 2, No: 12 , published: 10 August 2009
Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure
Tanaka Tooru/Saito Katsuhiko/Nishio Mitsuhiro/et al.
Appl. Phys. Express, Vol: 2, No: 12 , published: 10 August 2009
Light emission from InGa quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting
Liu Chaowang/Satka Alexander/Jagadamma Lethy Krishnan/et al.
Appl. Phys. Express, Vol: 2, No: 12 , published: 10 August 2009
Structural perfection of InGaN layers and its relation to photoluminescence
Liliental-Weber Z./Yu K.M./Hawkridge M./et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Photoluminescence studies of MBE-grown ZnO and MgZnO epitaxial layers
Kuokstis Edmundas/Karaliunas Manduagas/Jursenas Saulius/et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Luminescence of ZnO crystals under surface and bulk excitation regimes
Serveicius Tomas/Miasojedovas Saulius/Gavryushin Vladimir/Jursenas Saulius
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Luminescence spectra of CdSe/ZnSe double layers of quantum dots
Reznitsky Alexander/Klochikhin Albert/Permogrorov Sergei/et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Optical study of InAs quantum dot stacks embedded in GaAs/AlAs superlattices
Nedzinskas R./Cechavicius B./Kavaliasukas J./et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Photoluminescence properties of PbSe/PbS core-shell quantum dots
Maikov Georgy I./Vaxenburg Roman/Yanover Diana/et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Suppressed blining in CdTe/CdSe core-shell quantum dots
Kloper Viki/Osovsky Ruth/Cheskis Dima/et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Nature of vacancy defect clusters in chalcogenic semiconductors of A{II}B{VI} group irradiated by neutrons
Davidyuk G.Y./Bozhko V.V./Myronchuk G.L./et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Photoluminescence in Er-doped AgGaS[2]_-GeS[2] glasses
Halyan V.V./Kevshyn A.H./Kogut Yu.M./et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Different interfaces to crystalline ZnO nanorods and their applications
Willander M./Asif M.H./Zaman S./et al.
Phys. Status Solidi C, Vol: 6, No: 12 , published: 05 August 2009
Оптические и структурные свойства наностержней ZnO, полученных методом импульсного лазерного напыления без катализатора
Кайдашев В.Е./Кайдашев Е.М./Peres M./и др.
Ж. техн. физ., Vol: 79, No: 11 , published: 27 July 2009
Перенормировка запрещенной зоны в сильно фотовозбужденных структурах типа II ZnSe/BeTe
Зайцев С.В./Яковлев Д.Р./Вааг А.
Физ. и техн. полупроводников , Vol: 43, No: 2 , published: 23 July 2009
Direct Observation of the Two Lowest Exciton Zero-Phonon Lines in Single CdSe/ZnS Nanocrystals
L. Biadala, Y. Louyer, Ph. Tamarat, and B. Lounis
Phys. Rev. Lett., Vol: 103, No: 3 , published: 17 July 2009
Inductively coupled argon plasma-enhanced quantum-well intermixing: cap layer effect and plasma process influence`
Xu Chengdong/Mei Ting
IEEE J. Quantum Electron. , Vol: 45, No: 7-8 , published: 10 July 2009
High-power MWIR cascaded InAs-GaSb superlattice LEDs
Koerperick Edwin J./Olesberg Jonathon T./Hicks James L./et al.
IEEE J. Quantum Electron. , Vol: 45, No: 7-8 , published: 10 July 2009
Blinking behavior of surface-defect and imprutiy luminescence in nondoped and Mn2+-doped CdS nanocrystals
Ishizumi Atsushi/Kanemitsu Yoshihiko
J. Phys. Soc. Jpn., Vol: 78, No: 8 , published: 05 July 2009
Properties of blue and green InGaN/GaN quantum well emission on structured semipolar surfaces
Winderer Thomas/Lipski Frank/Schwaiger Stephan/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 6R , published: 25 June 2009
Role or morphology on photoluminescence quenching and depletion width formed at the interface of aluminum and poly(3-alkylthiophene)
Singh Vipul/Pandey Shyam S./Takashima Wataru/Kaneto Keiichi
Jpn. J. Appl. Phys., Vol: 48, No: 6R , published: 25 June 2009
Evaluation of performance of InGaN/GaN light-emitting diodes fabricated using NH3 with intentionally added H2O
Okada Narihito/Ishida Fumio/Mitsui Yasutomo/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 6R , published: 25 June 2009
Effect of branching of tetrapod-shaped CdTe/CdSe nanocrystal heterostructures on their luminescence
A.G. Vitukhnovsky, A.S. Shul'ga, S.A. Ambrozevich, E.M. Khokhlov, R.B. Vasiliev, D.N. Dirin, V.I. Yudson
Phys. Lett. A, Vol: 373, No: 26 , published: 15 June 2009
Characterization of ZnO nanostructures: a challenge to positron annihilation spectroscopy and other methods
Brauer Gerhard/Anwand Wolfgang/Grambole Dieter/et al.
Phys. Status Solidi C, Vol: 6, No: 11 , published: 09 June 2009
Особенности механизма дефектообразования в монокристаллах CdS при облучении большими дозами быстрых реакторных нейтронов
Давидюк Г.Е./Евшин А.Г./Божко В.В.Галян В.В.
Физ. и техн. полупроводников , Vol: 43, No: 11 , published: 09 June 2009
Фотолюминесценция наночастиц CdSe в пористом GaP
Бачериков Ю.Ю./Охрименко О.Б./Оптасюк С.В./и др.
Физ. и техн. полупроводников , Vol: 43, No: 11 , published: 09 June 2009
Влияние диэлектрической фазы на спектр фотолюминесценции фрактально структурированных нанокомпозитных пленок селенида свинца
Тропина Н.Э./Петровская З.Н./Черноглазова И.О.
Физ. и техн. полупроводников , Vol: 43, No: 11 , published: 09 June 2009
Влияние электрического поля на интенсивность и спектр излучения квантовых ям InGaN/GaN
Бочкарева Н.И./Богатов А.Л./Горбунов Р.И./и др.
Физ. и техн. полупроводников , Vol: 43, No: 11 , published: 09 June 2009
First-principles study of leakage current through a Si/SiO2 interface
Tomoya Ono
Phys. Rev. B: Condens. Matter, Vol: 79, No: 19 , published: 28 May 2009
Спектры фотолюминесценции в полупроводинковых структурах TlGaSe[2]
Георгобиани А.Н./Евлоев А.М.
Кpатк. сообщ. по физ. ФИAН, Vol: 2009, No: 10 , published: 20 May 2009
Фотолюменсценция монокристаллов Tl[x]Cu[1_-x]GaSe[2]
Георгобиани А.Н./Евлоев А.М./Дацкевич Н.П./и др.
Кpатк. сообщ. по физ. ФИAН, Vol: 2009, No: 10 , published: 20 May 2009
Valence band structure, optical transitions, and light gain spectrum in pseudomorphically strained zinc-blende GaN quantum wells
Lokot L.O.
Укр. фiз. ж., Vol: 54, No: 10 , published: 20 May 2009
Терагерцовое излучение при экситонных переходах в кристаллах CdS
Крупа Н.Н.
Изв. вузов. Радиофиз., Vol: 52, No: 5-6 , published: 20 May 2009
Photoluminescence spectra of CdSe/ZnS-quantum dot doped fiber with high doping concentrations
Cheng Cheng/Zeng Feng/Cheng Xiaoyu
Acta opt. sin=Guangxue xuebao , Vol: 29, No: 10 , published: 20 May 2009
Influence of substrate temperature on the structure and band edge luminescence of ZnO thin films
Zhang Dong/Wang Changzheng/He Ying
Acta opt. sin=Guangxue xuebao , Vol: 29, No: 10 , published: 20 May 2009
Optically stimulated luminescence signals under various stimulation modes assuming first-order kinetics
A. J. J. Bos and J. Wallinga
Phys. Rev. B: Condens. Matter, Vol: 79, No: 19 , published: 19 May 2009
Anti-stokes cooling in semiconductor nanocrystal quantum dots: a feasbility study
Rakovich Yury P./Donegan John F./Vasilevskiy Mikhail/Rogach Andrey L.
Phys. Status Solidi A, Vol: 206, No: 11 , published: 17 May 2009
Nitride-based quantum dots for single photon source applications
Jarjour Anas F./Oliver Rachel A./Taylor Robert A.
Phys. Status Solidi A, Vol: 206, No: 11 , published: 17 May 2009
Локализация экситонного возбуждения в планарных структурах Cd0.9Mn0.1Te/Cd0.7Mg0.3Te
Агекян В.Ф./Серов А.Ю./Философов Н.Г./Karcewski G.
Физ. тверд. тела, Vol: 51, No: 11 , published: 17 May 2009
Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN NQW grown by MOCVD
Liu Xaixin/Wang Junxi/Yan Jianchang/et al.
J. Semicond., Vol: 30, No: 11 , published: 17 May 2009
Получение структур с квантовыми точками InAs/GaAs методом импульсного охлаждения раствора-расплава
Благин А.В./Баранник А.А./Лунин Л.С./и др.
Неорган. матер., Vol: 45, No: 12 , published: 17 May 2009
Влияние толщины слоев CdTe и ZnTe на спектры катодолюминесценции в напряженных сверхрешетках CdTe/ZnTe со слоями квантовых точек
Кучеренко И.В../Виноградов В.С./Трушин А.С./Карчевски Г.
Физ. тверд. тела, Vol: 51, No: 11 , published: 17 May 2009
Continuous-Wave Pumping of Multiexciton Bands in the Photoluminescence Spectrum of a Single CdTe-CdSe Core-Shell Colloidal Quantum Dot
Ruth Osovsky, Dima Cheskis, Viki Kloper, Aldona Sashchiuk, Martin Kroner, and Efrat Lifshitz
Phys. Rev. Lett., Vol: 102, No: 19 , published: 14 May 2009
Experimental discrimination of geminate and non-geminate recombination in a-Si:H
T. W. Herring, S.-Y. Lee, D. R. McCamey, P. C. Taylor, K. Lips, J. Hu, F. Zhu, A. Madan, and C. Boehme
Phys. Rev. B: Condens. Matter, Vol: 79, No: 19 , published: 12 May 2009
Signature of the microcavity exciton–polariton relaxation mechanism in the polarization of emitted light
Georgios Roumpos, Chih-Wei Lai, T. C. H. Liew, Yuri G. Rubo, A. V. Kavokin, and Yoshihisa Yamamoto
Phys. Rev. B: Condens. Matter, Vol: 79, No: 19 , published: 11 May 2009
New approaches for enhancing light emission from Er-based materials and devices
A. Irrera, M. Galli, M. Miritello, R. Lo Savio, F. Iacona, G. Franzò, A. Canino, A.M. Piro, M. Belotti, D. Gerace, A. Politi, M. Liscidini, M. Patrini, D. Sanfilippo, P.G. Fallica, L.C. Andreani, F. Priolo
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Light emitting devices based on nanocrystalline-silicon multilayer structure
M. Wang, A. Anopchenko, A. Marconi, E. Moser, S. Prezioso, L. Pavesi, G. Pucker, P. Bellutti, L. Vanzetti
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures
F. Iori, S. Ossicini
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Two-photon excitation of luminescence in pyrolytic silicon nanocrystals
M. Falconieri, R. D’Amato, F. Fabbri, M. Carpanese, E. Borsella
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Computational simulations for ensembles of luminescent silicon nanocrystals: Implications for optical gain and stimulated emission
A. Meldrum, R. Lockwood, V.A. Belyakov, V.A. Burdov
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Spectral and dynamical study of nonlinear luminescence from silicon nanocrystals excited by ultrashort pulses
K. Žídek, F. Trojánek, B. Dzurňák, P. Malý, I. Pelant
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
O. Demichel, F. Oehler, V. Calvo, P. Noé, N. Pauc, P. Gentile, P. Ferret, T. Baron, N. Magnea
Physica E, Vol: 41, No: 6 , published: 01 May 2009
PL and XPS depth profiling of Si/Al2O3 co-sputtered films and evidence of the formation of silicon nanocrystals
I. Dogan, I. Yildiz, R. Turan
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Enhancement and red shift of photoluminescence (PL) of fresh porous Si under prolonged laser irradiation or ageing: Role of surface vibration modes
S. Gardelis, A.G. Nassiopoulou, M. Mahdouani, R. Bourguiga, S. Jaziri
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Comparative study of Si precipitation in silicon-rich oxide films
Y. Lebour, P. Pellegrino, S. Hernández, A. Martínez, E. Jordana, J.-M. Fedeli, B. Garrido
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers
F. Delachat, M. Carrada, G. Ferblantier, A. Slaoui, C. Bonafos, S. Schamm, H. Rinnert
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Towards spectroscopy of a few silicon nanocrystals embedded in silica
M. Grün, P. Miska, E. Neu, D. Steinmetz, F. Montaigne, H. Rinnert, C. Becher, M. Vergnat
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Effect of thermal annealing on structure and photoluminescence properties of silicon-rich silicon oxides
D.M. Zhigunov, V.N. Seminogov, V.Yu. Timoshenko, V.I. Sokolov, V.N. Glebov, A.M. Malyutin, N.E. Maslova, O.A. Shalygina, S.A. Dyakov, A.S. Akhmanov, V.Ya. Panchenko, P.K. Kashkarov
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Surface chemistry and photoluminescence property of functionalized silicon nanoparticles
Anoop Gupta, Hartmut Wiggers
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Structural and light emission properties of silicon-based nanostructures with high excess silicon content
L. Khomenkova, N. Korsunska, M. Baran, B. Bulakh, T. Stara, T. Kryshtab, G. Gómez Gasga, Y. Goldstein, J. Jedrzejewski, E. Savir
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Optical amplification studies in Si nanocrystals-based waveguides prepared by ion-beam synthesis
Y. Lebour, D. Navarro-Urrios, P. Pellegrino, G. Sarrabayrouse, L. Pavesi, B. Garrido
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Towards an enhanced coupling between the Er ions and Si nanoclusters
L. Khomenkova, F. Gourbilleau, J. Cardin, R. Rizk
Physica E, Vol: 41, No: 6 , published: 01 May 2009
On relation between the 1.5 μm Er-related emission and 9 μm vibrational modes of oxygen in silicon
S. Minissale, N.Q. Vinh, T. Gregorkiewicz
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Mode structure in the luminescence of Si-nc in cylindrical microcavities
P. Bianucci, J.R. Rodríguez, F.C. Lenz, J.G.C. Veinot, A. Meldrum
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Exciton localization effect in Mn-implanted GaN by photoluminescence measurements
X.Y. Meng, Y.H. Zhang, W.Z. Shen
Physica B, Vol: 404, No: 8-11 , published: 01 May 2009
Argon plasma induced photoluminescence enhancement and quantum well intermixing of InGaAs/InGaAlAs multiple quantum wells
C.L. Chiu, E.Y. Lin, K.Y. Chuang, David J.Y. Feng, T.S. Lay
Physica B, Vol: 404, No: 8-11 , published: 01 May 2009
Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE-grown Si:Er/Si diode structures
K.E. Kudryavtsev, V.P. Kuznetsov, D.V. Shengurov, V.B. Shmagin, Z.F. Krasilnik
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Correlation between electroluminescence and charge trapping in multi-color Eu implanted Si-based light-emitting diodes
A.N. Nazarov, I.P. Tyagulskyy, S.I. Tyagulskiy, L. Rebohle, W. Skorupa, J. Biskupek, U. Kaiser
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence
T. Arguirov, T. Mchedlidze, M. Kittler, M. Reiche, T. Wilhelm, T. Hoang, J. Holleman, J. Schmitz
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Rapid color-switching micro-LEDs from silicon MIS diodes
S. Kuai, A. Meldrum
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment
Dongsheng Li, Jianhao Huang, Deren Yang
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Electrically driven luminescence of nanocrystalline Si/SiO2 multilayers on various substrates
T. Wang, D.Y. Wei, H.C. Sun, Y. Liu, D.Y. Chen, G.R. Chen, J. Xu, W. Li, Z.Y. Ma, L. Xu, K.J. Chen
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Si-based emissive microdisplays
P. Jaguiro, P. Katsuba, S. Lazarouk, M. Farmer, A. Smirnov
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Stable electroluminescence of nanostructured silicon embedded into anodic alumina
P. Katsuba, P. Jaguiro, S. Lazarouk, A. Smirnov
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm
D.N. Lobanov, A.V. Novikov, K.E. Kudryavtsev, A.N. Yablonskiy, A.V. Antonov, Yu.N. Drozdov, D.V. Shengurov, V.B. Shmagin, Z.F. Krasilnik, N.D. Zakharov, P. Werner
Physica E, Vol: 41, No: 6 , published: 01 May 2009
Power flow associated with the Goos-Hänchen shift of a normally incident electromagnetic beam reflected off an antiferromagnet
F. Lima, T. Dumelow, E. L. Albuquerque, and J. A. P. da Costa
Phys. Rev. B: Condens. Matter, Vol: 79, No: 15 , published: 30 April 2009
Photoluminescence from disorder induced states in individual single-walled carbon nanotubes
Harutyunyan Hayk/Gokus Tobias/Green Alexander A./et al.
Phys. Status Solidi B, Vol: 246, No: 11-12 , published: 28 April 2009
Probing exciton propagation and quenching in carbon nanotubes with near-field optical microscopy
Georgi Carsten/B~:ohmler Miriam/Qian Huihong/et al.
Phys. Status Solidi B, Vol: 246, No: 11-12 , published: 28 April 2009
Quantitative composition of a single-walled carbon nanotube sample: Raman scattering versus photoluminescence
Heeg Sebastian/Malic Ermin/Casiraghi Cinzia/Reich Stephanie
Phys. Status Solidi B, Vol: 246, No: 11-12 , published: 28 April 2009
Silicon carbide nanowires: synthesis and cathodoluminescence
Huczko Andzej/Dabrowska Agnieszka/Savchyn Volodymyr/et al.
Phys. Status Solidi B, Vol: 246, No: 11-12 , published: 28 April 2009
Carrier mass measurements in degenerate indium nitride
G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, V. Lebedev, V. Cimalla, and O. Ambacher
Phys. Rev. B: Condens. Matter, Vol: 79, No: 16 , published: 23 April 2009
Polariton parametric photoluminescence in spatially inhomogeneous systems
Davide Sarchi, Michiel Wouters, and Vincenzo Savona
Phys. Rev. B: Condens. Matter, Vol: 79, No: 16 , published: 23 April 2009
Photoluminescence and XPS investigations of Cu{2+}-doped ZnS quantum dots capped with polyvinylpyrrolidone
Hou Shili/Zhang Xiangqiang/Mao Hubing/et al.
Phys. Status Solidi B, Vol: 246, No: 10 , published: 23 April 2009
Light emitting diodes on silicon substrates: preliminary results
Bondi Alexandre/Guo Weiming/Pedesseau Laurent/et al.
Phys. Status Solidi C, Vol: 6, No: 10 , published: 23 April 2009
Analysis of the anisotropy in an m-plane GaN film via HVPE on a _g-LiAlO[2] substrate
Tian Mi/Xiu Xiangqian/Zhang Rong/et al.
J. Semicond., Vol: 30, No: 9 , published: 23 April 2009
Influence of a tilted cavity on quantum-dot optoelectronic active devices
Liu Wanglai/Xu Bo/Liang Ping/et al.
J. Semicond., Vol: 30, No: 9 , published: 23 April 2009
Light emission from ion-implanted silicon
Sun J.M./Helm M./Skorupa W./et al.
Phys. Status Solidi C, Vol: 6, No: 3 , published: 23 April 2009
Tunable violet–blue emission from 3C-SiC nanowires
J. Zhu, H. Wu, H.T. Chen, X.L. Wu, X. Xiong
Phys. Lett. A, Vol: 373, No: 18-19 , published: 20 April 2009
Photoluminescence Studies of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Molecular Beam Epitaxy
Kim Min Su/Kim Do Yeob/Park Ho Jin/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 4R , published: 20 April 2009
Growth of ZnO epitaxial films using 3C-SiC substrate with buried insulating layer
Nakano Takahiro/Tanehira Takafumi/Ishitani Koyoshi/Nakao Motoi
Jpn. J. Appl. Phys., Vol: 48, No: 4R , published: 20 April 2009
Excitation wavelength dependence of carrier relaxation in self-assemebled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65 As barrier layers
Mukai Takuya/Takahashi Tomoya/Morita Ken/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Collinear polarization of exciton/biexciton photoluminescence from single hexagonal GaN quantum dots
Kindel Christian/Kako Satoshi/Kawano Takeshi/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Specific blue light emission from nanocrystalline porous Si treated by high-pressure water vapor annealing
Gelloz Bernard/Mentek Romain/Koshida Nobuyoshi
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
InAs/InP quantum dots, dashes, and ordered arrays
Nut Sritirawisarn and Richard Nötzel
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Photoluminescence properties of self-assembled InAs quantum dots grown on (001) and (113)B GaAs substrates by molecular beam epitaxy under a slow growth rate condition
Takahashi Tomoya/Mukai Takuya/Morita Ken/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Observation of new isoelectronic trap luminescence in nitrogen δ-doped GaP
Ikezawa Michio/Sakuma Yoshiki/Watanabe Masato/Masumoto Yasuaki
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
One- and two-dimensional spectral diffusions in InP/InAs/InP core-multishell nanowires
Goto Ken/Ikezawa Michio/Tomimoto Shinichi/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Properties and prospects of blue-green emitting II-VI-based monolithic microcavities
Sebald K./Kruse C./Wiersig J.
Phys. Status Solidi B, Vol: 246, No: 2 , published: 16 April 2009
Single quantum dot controlled gain modulation in high-Q micropillar lasers
Reitzenstein S./B~:ockler C./Bazhenov A./et al.
Phys. Status Solidi B, Vol: 246, No: 2 , published: 16 April 2009
Control of single quantum dot emission characteristics and fine structure by lateral electric fields
Ulrich S.M./Hafenbrak R./Vogel M.M./et al.
Phys. Status Solidi B, Vol: 246, No: 2 , published: 16 April 2009
Nonlinear optics with ZnO nanowires
Voss Tobias/Kudyk Iryna/Wischmeier Lars/Gutowski J~:urgen
Phys. Status Solidi B, Vol: 246, No: 2 , published: 16 April 2009
Resonance enhancement of photoluminescence from silicon nanocrystallites
Belyakov L.V./Goryachev D.N./Sreseli O.M.
Phys. Status Solidi B, Vol: 246, No: 2 , published: 16 April 2009
Electrical resistivity and photoluminescence of zinc oxide films prepared by ultrasonic spray pyrolysis
Bouzid Khedidja/Djelloul Abdelkader/Bouzid Noureddine/Bougdira Jamal
Phys. Status Solidi A, Vol: 206, No: 1 , published: 16 April 2009
Structural composition of a silicon-oxygen interlayer in photoluminescent Al[2]O[3] films with Si nanocrystals
Lisovs'kyy I.P./Zlobin S.O./Manoilov E.G./et al.
Укр. фiз. ж., Vol: 54, No: 7 , published: 16 April 2009
Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices
Ling Shih-Chun/Wang Te-Chung/Chen Jun-Rong/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Transient electroluminescence of white organic light-emitting diodes with blue phosphorescent and red fluorescent emissive layers
Kajii Hirotake/Takahota Noriyoshi/Sekimoto Yasuhiro/Ohmori Yutaka
Jpn. J. Appl. Phys., Part 1, Vol: 48, No: 4S , published: 16 April 2009
Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
Zaitsev S.V./Dorokhin M.V./Demina P.B./et al.
Phys. Status Solidi B, Vol: 246, No: 5 , published: 16 April 2009
Direct determination of intrinsic In[x]Ga[1_-x]P (x=0.49) band-gap deformation potentials by cathodoluminescence piezo-spectroscopy
Porporati Alessandro Alan/Furukawa Naohide/Zhu Wenliang/Pezzotti Giuseppe
Phys. Status Solidi B, Vol: 246, No: 1 , published: 16 April 2009
Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal enriched Er-doped SiO2 layers
A. Kanjilal, L. Rebohle, N. K. Baddela, S. Zhou, M. Voelskow, W. Skorupa, and M. Helm
Phys. Rev. B: Condens. Matter, Vol: 79, No: 16 , published: 14 April 2009
Structural, optical, and homoepitaxial studies on the bulk GaN single crystals spontaneously nucleated by the Na-flux method
Onuma Takeyoshi/Yamada Takahiro/Yamane Hisanori/Chinchibu Shigefusa F.
Appl. Phys. Express, Vol: 2, No: 9 , published: 09 April 2009
Intense green cathodluminescence from low-temperature-deposited ZnO film with fluted hexagonal cone nanostructures
Li Chaoyang/Kawaharamura Toshiyuki/Matsuda Tokiyoshi/et al.
Appl. Phys. Express, Vol: 2, No: 9 , published: 09 April 2009
Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar ~(20~-21~) GaN substrates
Yoshizumi Yusuke/Adachi Masahiro/Enya Yohei/et al.
Appl. Phys. Express, Vol: 2, No: 9 , published: 09 April 2009
Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
Ding Wuchang/Zuo Yuhua/Zhang Yun/et al.
J. Semicond., Vol: 30, No: 10 , published: 09 April 2009
Degradation of luminescence characteristics of CdZnSe/ZnSe quantum well heterostructures under _g-irradiation
Borkovska L.V./Korsunska N.O./Kushnirenko V.I./Venger Ye.F.
Укр. фiз. ж., Vol: 54, No: 12 , published: 09 April 2009
Vertical injection thin film deep ultraviolet light emitting diodes with AlGaN multiple-quantum wells active region
Adivarahan Vinod/Heidari Ahmad/Zhang Bin/et al.
Appl. Phys. Express, Vol: 2, No: 9 , published: 09 April 2009
Anomalously large difference in Ga incorporation for AlGaN grown on the (11~-20) and (1~-100) planes under group-III-rich conditions
Horita Masahiro/Kimoto Tsunenobu/Suda Jun
Appl. Phys. Express, Vol: 2, No: 9 , published: 09 April 2009
Фотолюминесцентные исследования кубического нитрида бора, активированного Nd в процессе синтеза под высоким давлением
Шишонок Е.М./Леончик С.В./Bodiou L./Braud A.
Физ. тверд. тела, Vol: 51, No: 9 , published: 07 April 2009
Край собственного поглощения полупроводниковых твердых растворов с прямой структурой энергетических зон
Пихтин А.Н./Хегази Х.Х.
Физ. и техн. полупроводников , Vol: 43, No: 10 , published: 07 April 2009
Коротковолновый край собственной фотолюминесценции в слабых твердых растворах GaNxAs1-x
Гуткин А.А./Брунков П.Н./Егоров А.Ю.
Физ. и техн. полупроводников , Vol: 43, No: 10 , published: 07 April 2009
Исследование оптических характеристик структур с сильно напряженными квантовыми ямами InxGa1-xAs
Винокуров Д.А./Капитонов В.А./Николаев Д.Н./и др.
Физ. и техн. полупроводников , Vol: 43, No: 10 , published: 07 April 2009
Решающая роль синглетной формы кислорода в формировании фотолюминесценции нанопористого кремния
Беляков Л.В./Вайнштейн Ю.С./Горячев Д.Н./Сресели О.М.
Физ. и техн. полупроводников , Vol: 43, No: 10 , published: 07 April 2009
Фотолюминесценция кремния после осаждения поликристаллических пленок алмаза
Аминев Д.Ф./Багаев В.С./Галкина Т.И./и др.
Физ. и техн. полупроводников , Vol: 43, No: 9 , published: 07 April 2009
Особенности фононных повторений линии фотолюминесценции экситона, связанного на акцепторе в квантовых ямах GaAs/AlGaAs
Петров П.В./Иванов Ю.Л./Аверкиев Н.С.
Физ. и техн. полупроводников , Vol: 43, No: 9 , published: 07 April 2009
Visible photoluminescence of photoluminescence of porous silicon covered with an HfON dielectric layer
Jiang Jiang/Zhang Yan
J. Semicond., Vol: 30, No: 8 , published: 07 April 2009
Luminescence spectroscopy of ion implanted AlN bulk single crystal
Li Weiwei/Zhao Youwen/Dong Zhiyuan/et al.
J. Semicond., Vol: 30, No: 8 , published: 07 April 2009
Synthesis of ZnS whiskers and their photoluminescence properties
Du Yuanyuan/Jie Wanqi/Li Huanyong
J. Semicond., Vol: 30, No: 8 , published: 07 April 2009
Проявление инжекционного механизма падения эффективности светодиодов на основе AlInGaN в температурной зависимости внешнего квантового выхода
Павлюченко А.С./Рожанский И.В./Закгейм Д.А.
Физ. и техн. полупроводников , Vol: 43, No: 10 , published: 07 April 2009
Влияние температуры на ампер-яркостные характеристики светодиодной структуры на основе InGaN
Грушко Н.С./Вострецова Л.Н./Амброзевич А.С./Кагарманов А.С.
Физ. и техн. полупроводников , Vol: 43, No: 10 , published: 07 April 2009
Room-temperature electroluminescence of p-Zn[x]Mg[1_-x]O:Na/n-ZnO p_-n junction light emitting diode
Ye Zhizhen/Zhang Liqiang/Huang Jingyun/et al.
J. Semicond., Vol: 30, No: 8 , published: 07 April 2009
Оптические и электрофизические свойства дефектов в высокочистом CdTe
Багаев В.С./Клевков Ю.В./Колосов С.А./и др.
Физ. тверд. тела, Vol: 52, No: 1 , published: 02 April 2009
Molecular beam epitaxial growth of ZnCrO films by using RF plasma source
Yoneta Minoru/Satou Yuichi/Shintani Motoyuki/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Preparation of Cu(In,Al)Se[2] thin films by selenization using diethylselenide
Umezawa Akihisa/Yasuniwa Toshihiro/Miyama Atsushi/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Epitaxial growth of chalcopyrite CuInS[2] films on GaP(001) by controlling _(Cu_)/_(In_) ratio
Vequizo Reynaldo Magdadaro/Tsuboi Nozomu/Kobayashi Satoshi/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Growth of Ge and P codoped p-type CuInS[2] bulk crystals
Kato Takamasa/Yamaguchi Hiroshi/Muranaka Tsutomu/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se[2] thin films and solar cells
Shirakata Sho/Nakada Tokio
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Optical characterization of Ag/Ga composition ratio in AgGaSe[2] thin film
Matsuo Hitoshi/Tokuda Takahiro/Yoshino Kenji/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Temperature dependence of excitonic emission in CuInSe[2]
Yakushev M.V./Martin R.W./Mudryi A.V.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Effects of magnetic fields on free excitons in CuInSe[2]
Yakushev MV./Martin R.W./Babinski A./Mudryi A.V.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Analysis of bound-exciton emissions of CuInS[2] crystals
Kishigui Kishigui/Shim YongGu/Yoshino Kenji/Wakita Kazuki
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Luminescent materials based on semiconductor compound templates for random laser applications
Ursaki V.V./Tiginyanu I.M./Sirbu L./Enachi M.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Time-dependent evolution of crystal lattice, defects and impurities in CdIn[2]S[4] and GaP
Pyshkin Sergei L./Ballato John/Bass Michael/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Photoluminescence properties of ZnSnP[2] single crystals
Miyauchi Keisuke/Minemura Takehiro/Nakatani Keigo/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Optical and electrical characterization of In-doped ZnMgO films grown by spray pyrolysis method
Yoshino Kenji/Oshima Minoru/Takemoto Yujin/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Optical properties of AgInS[2] thin films prepared by sulfurization of evaporated metal precursors
Nakamura Shigeyuki/Seto Satoru
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Effect of co-doping of rare earth and transition metal ions on the photoluminescence in ZnGa[2]S[4]:Mn{2+}
Hidaka Chiharu/Hodotsuka Jun/Takizawa Takeo
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Thin-film layers and multilayer nano-structures with controllable properties
Goncharova O./Gremenok V./Kravchenko V./et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
The anisotropy of the optical properties of ternary semiconductors formed by elements of III and VI groups
Cuculescu Elmira/Evtodiev Igor/Caraman Iuliana
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Photoluminescence studies of the interface of CdS/CdTe heterojunctions
Vatavu Sergiu/Zhao Hehong/Caraman Iuliana/et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Near infrared photoluminescence in Zn[1_-x]Ni[x]S
Joshi N.V./Luengo Jorge/Vera Fatima
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing
Gargallo-Caballero R./Guzman A./Hopkinson M./et al.
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs[1_-x]Sb[x] layer
Liao Yu-An/Hsu Wei-Ting/Lee Ming-Chih/et al.
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Deterministic self-organization: ordered positioning of InAs quantum dots by sefl-organized anisotropic strain engineering on patterned GaAs (311)B
Selcuk E./Hamhuis G.J./Notzel R.
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)
Knubel Andreas/Aidam Rolf/Cimalla Volker/et al.
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Electroluminescence characterization of AlGaN/GaN HEMTs
Lossy Richard/Glowacki Arkadiusz/Boit Christian/W~:urfl Joachim
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier Markus/Passow Throsten/Kunzer Michael/et al.
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Electroluminescence analysis of 1.3_-1.5 _mm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
Montes M./Hierro A./Ulloa J.M./et al.
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
High-temperature electrical properties of CdTe:Bi single crystals
Fochuk P./Obedzynska Yu./Armani N./et al.
Phys. Status Solidi C, Vol: 6, No: 5 , published: 01 April 2009
Perturbing GaN/AlN quantum dots with uniaxial stressors
Moshe Ofer/Rich Daniel H./Damilano Benjamin/Massies Jean
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Improvement in size distribution and optical properties of InAs/GaAs QDs by post growth thermal treatment
Saravanan Shanmugam/Harayama Takashisa
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Ordering of GaAs quantum dots by droplet epitaxy
Mano Takaaki/Kuroda Takashi/Noda Takeshi/Sakoda Kazuaki
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Growth of GaSb dots on GaAs(100) by droplet epitaxy
Kawazu Takuya/Mano Takaaki/Noda Takeshi/et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Zero effective electron g-factor of QD realized by optically induced nuclear field
Sasakura H./Adachi S./Kaji R./et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots
Reimer M.E./Dalacu D./Lapointe J./et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
CdSe quantum dot in a ZnSe nanowire as an efficient source of single photons
Tribu A./Sallen G./Aichele T./et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Three-dimensional localization of excitons in the InAs/GaAs wetting layer _- magnetospectroscopic study
Babinski A./Golnik A./Borysiuk J./et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering
Sritirawisarn Nut/van Otten Frank W.M./Eijkemans Tom J./N~:otzel Richard
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
White light generation through yellow nanophosphor and blue organic light-emitting diode
Park Je Hong/Jang Nak Won/Kim Jong Su/Jeong Yong Seok
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Single entangled photon pair emission from an InGaAs/GaAs quantum dot up to temperatures of 30 K
Hafenbrak R./Ulrich S.M./Wang L./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Simulation of the time dependent photoluminescence of a J-aggregate microcavity
Michetti Paolo/La Rocca Giuseppe C.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands
Horst S./Chatterjee S./Hantke K./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Lasing in single ZnO nanorods after fs- and ns-pulsed excitation
Fallert J./Dietz R.J.B./Zhou H./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Emission properties of ZnSe-based pillar microcavities at elevated temperatures
Kalden Joachim/Lohmeyer Henning/Sebald Kathrin/et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Motional enhancement of the exciton magnetic moment
Kochereshko V.P./Platonov A.V./Davies J.J./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Trion states in a dense 2DEG
Kochereshko V.P./Klochikhin A.A./Crooker S.A./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Time-resolved photoluminescence suty of mesoporous ZnO nanostructures
Schwalm Michael/Horst Swantje/Chernikov Alexej/et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Surface excitnic recombination dynamics in ZnO nanowires
Richters Jan-Peter/Wischmeier Lars/R~:uckmann Ilja/et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Investigation of high-T luminescence processes in ZnO nanorods grown catalytically by vapor-transport method
Gupta A./Omari M./Kouklin N.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Growth behaviour of InGaN/GaN self-assembled quantum dots with different growth conditions in horizontal MOCVD
Jung Woo-Gwang/Jang Jae-Min/Choi Seung-Kyu/Kim Jin-Yeol
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Fabrication of coupled GaAs quantum dots and their optical properties
Kim Jong Su/Song Jin Dong/Byeon Clare C./et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Formation of nanoscale magnetic field by nuclear spin polarization in individual quantum dots
Sasakura H./Adachi S./Kaji R./Muto S.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Observation of enhanced luminescence emitted from InAs quantum dots with direct contact to superconducting niobium stripe
Idutsu Yasuhiro/Takada Makoto/Hayashi Yujiro/et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
Neudert K./Trojanek F./Kuldova K./et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Type-II excitons in ZnTe/ZnSe quatntum dots
Andre Regis/Najjar Rita/Besombes Lucien/et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules
Lin Hsuan/Wang Sheng-Yun/Lin Chia-Hsien/et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in-situ chemical etching
Idutsu Yasuhiro/Miyamura Souta/Suemune Ikuo
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Influence of piezoelectric fields on excitonic complexes in InGaN quantum dots
Sebald K./Kalden J./Herlufsen S./et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Line broadening of excitonic complexes in sefl-assembled GaAs/AlGaAs single quantum dots
Abbarchi M./Mastrandrea C./Kuroda T./et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
High resolution spectroscopy of self-assembled single GaAs/AlGaAs quantum dots
Abbarchi M./Mastrandrea C./Kuroda T./et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
InP-quantum dots in Al[0.20]Ga[0.80]InP with different barrier configurations
Schulz Wolfgang-Michael/Rossbach Robert/Reischle Matthias/et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Energy transfer in hybrid CdSe quantum dots vs. labelled molecular chaperone systems by imaging microscopy
Tani Toshiro/Horiuchi Hiromi/Oda Masaru/et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Luminescent detection of Cu(II) ions in aqueous solution using CdSe and CdSe-ZnS quantum dots functionalised with mercaptosuccinic acid
Callan John F./Mulrooney Ray C.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
The synthesis of CdSe quantum dots with carboxyl group and study on their optical characteristics
Ye Chen/Park Sandjoon/Kim Jongsung
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Characteistics of chirped quantum dot superluminescent diodes
Bae H.C./Park H.L./You Y.C./et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Decoherence of single photons from an InAs/InP quantum dot emitting at 1.3 _mm wavelength
Kuroda Takashi/Sakuma Yoshiki/Sakoda Kazuaki/et al.
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Comparison of the dilute bismide and nitride alloys Ga-AsBi and GaAsN
Mascarenhas Angelo/Kini Rajeev/Zhang Yong/et al.
Phys. Status Solidi B, Vol: 246, No: 3 , published: 31 March 2009
High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
Millot M./Gilliland S./Broto J.M./et al.
Phys. Status Solidi B, Vol: 246, No: 3 , published: 31 March 2009
Optical properties of di-octyl substituted polyfluorene under hydrostatic pressure
Paudel K./Arif M./Chandrasekhar M./Guha S.
Phys. Status Solidi B, Vol: 246, No: 3 , published: 31 March 2009
Excitons in coupled quantum dots: hydrostatic pressure and electric field effects
Lopez S.Y./Porras-Montenegro N./Duque C.A.
Phys. Status Solidi B, Vol: 246, No: 3 , published: 31 March 2009
Electrical injection of spin-polarized electrons into single quantum dots
K~:ummell T./Arians R./Huang J./et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Electroluminescence from monolayer of quantum dots formed by multiple dip-coating processes
Lee Chang-Lyoul/Nam Sung-Wook/Kim Viena/et al.
Phys. Status Solidi B, Vol: 246, No: 4 , published: 31 March 2009
Weak coupling effects in high-Q electrically driven micropillars
Kistner C./Reitzenstein S./B~:ockler C./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Electrical spin injection into InGaS quantum dots: single dot devices and time-resolved studies
Hetterich M./L~:offler W./Asshoff P./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Spin-controlled optoelectronic devices
H~:ovel S./Gerhardt N.C./Hofmann M.R./et al.
Phys. Status Solidi C, Vol: 6, No: 2 , published: 31 March 2009
Electroluminescence in quantum well heterostructures p-Al[x]Ga[1_-x]As/GaAs[1_-y]P[y]/n-Al[x]Ga[1_-x]As under uniaxial stress
Berman Irina V./Bogdanov Evgeniy V./Kissel Heiko/et al.
Phys. Status Solidi B, Vol: 246, No: 3 , published: 31 March 2009
Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
Chamings James.Ahmed Sucheta/Adams Alfred R./et al.
Phys. Status Solidi B, Vol: 246, No: 3 , published: 31 March 2009
Injection current-dependent quantum efficiency of InGaN-based light-emitting diodes on sapphire and GaN substrates
Yang Y./Cao X.A./Yan C.H.
Phys. Status Solidi A, Vol: 206, No: 2 , published: 31 March 2009
Highly efficient borad-area blue and white light-emitting diodes on bulk GaN substrates
Vampola Kenneth J./Fellows Natalie N./Masui Hisashi/et al.
Phys. Status Solidi A, Vol: 206, No: 2 , published: 31 March 2009
Recent progress in nonpolar LEDs as polarized light emitters
Masui Hisashi/Schmidt Mathew/Fellows Natalie/et al.
Phys. Status Solidi A, Vol: 206, No: 2 , published: 31 March 2009
Strain effect on plarized optical properties of c-plane GaN and m-plane GaN
Tao Renchun/Yu Tongjun/Jia Chuanyu/et al.
Phys. Status Solidi A, Vol: 206, No: 2 , published: 31 March 2009
Optimization of InGaN(In,Al,Ga)N based near UV-LEDs by MQW strain balancing with in-situ wafer bow sensor
Knauer A./Kolbe T./Einfeldt S./et al.
Phys. Status Solidi A, Vol: 206, No: 2 , published: 31 March 2009
Cathodoluminescence of ZnSiO[x] nanocomposite films prepared on Si substrates
Kim Young-Hwan/Cho Woon-Jo/Kim Seong-Il
Phys. Status Solidi C, Vol: 6, No: 4 , published: 31 March 2009
Second hidden triplet-singlet crossover of charged excitons in n-doped (Cd,Mn)Te/(Cd,Mg)Te in ultra-high magnetic fields
Y. Hirayama, E. Kojima, S. Takeyama, G. Karczewski, T. Wojtowicz, and J. Kossut
Phys. Rev. B: Condens. Matter, Vol: 79, No: 12 , published: 30 March 2009
Bright and Grey States in CdSe-CdS Nanocrystals Exhibiting Strongly Reduced Blinking
P. Spinicelli, S. Buil, X. Quélin, B. Mahler, B. Dubertret, and J.-P. Hermier
Phys. Rev. Lett., Vol: 102, No: 13 , published: 30 March 2009
Spin orientation of excitons, trions and tetraons in charge tunable InP quantum dots
Masumoto Yasuaki/Suzuki Tsukasa/Kawana Keisuke/Ikezawa Michio
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Polarization memory effect on nonlinear photoluminescence of semimagnetic semiconductor Cd[0.8]Mn[0.2]Te
Katayama Kouichi/Miyajima Kensuke/Ashida Masaaki/Itoh Tadashi
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Spatially indirect photoluminescence of ZnSe/BeTe type II quantum wells in pulsed high magnetic fields
Takeyama Shojiro/Shen Rui/Enya Yohei/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Nonadiabatic theory of excitons in wurzite AlGaN/GaN quantum-well heterostructures
Pokatilov Evghenii P./Nika Denis L./Fomin Vladimir M./Devreese Jozef T.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Propagation dynamics of exciton spins in a high-density semiconductor quantum dot system
Murayama A./Furuta T./Oshino S./et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Magnetic-field induced mixing of singlet and triplet excitons cofined in CuCl quantum dots
Miyajima Kensuke/Umemura Yuna/Katayama Kouichi/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Narrowing of exciton linewidth of a quantum dot with increasing temperature
Bando Kazuki/Masumoto Yasuaki
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Synthesis, characterization, and its PL dynamics of colloidal type II CdTe/CdSe nanocrystals
Oda Masaru/Nashiyama Akira/Marumo Gi-ichi/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
The optical spectra of confined polygermanes: from bulk film down to nanosize layers
Ostapenko Nina/Kozlova Nata/Nanjo Masato/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Rapid energy transfer and its temperature dependence in _p-conjugated dendrimers
Akai I./Miyanari K./Shimamoto T./et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Excitons in perylene tetracarboxdiimide crystals for optoelectronics
Provencher Francoise/Laprade Jean-Frederic/Cote Michel/Silva Carlos
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Simple model relating recombinationr ates and non-proportional light yield in scintillators
Bizarri G./Moses W.W./Singh J./et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Radiative emission from triplet excitations in light emitting devices
Singh Jai
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Radiative decay theory: what suppresses exciton superradiance?
Bamba Motoaki/Ishihara Hajime
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Polarized photoluminescence study of whispering gallery mode polaritons in ZnO microcavity
Sun Liaoxin/Chen Zhanghai/Ren Qijun/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Exciton coherence in semiconductor quantum dots
Ishi-Hayase Junko/Akahane Kouichi/Yamamoto Naokatsu/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers
Hiratsuka Shingo/Saravanan Shanugam/Harayama Takahisa/Ohtani Naoki
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Temperature dependence of intra-chain photoluminescence of a long oligothiophene
Kanemoto Katsuichi/Akai Ichiro/Hashimoto Hideki/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Transient band-bending in InP/InAs/InP core-multishell nanowires
Goto Ken/Tomimoto Shinichi/Pal Bipul/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Exciton quantum confinement effect in nanostructures formed by laser radiation on the surface of CdZnTe ternary compound
Medvid A./Mychko A./Strilchyk O./et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Structural and electronic properties of Co-doped ZnO nanocrystals synthesized by co-precpitation method
Hasuike Noriyuki/Nishio Koji/Isshiki Toshiyuki/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Size-dependent photoluminescence blinking statistics of single CdSe/ZnS nanocrystals
Ito Yuichi/Matsuda Kazunari/Kanemitsu Yoshihiko
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Optical properties of anthracene-fluorene mixed crystals fabricated by cell method
Aoki-Matsumoto Tamao/Takama Atsushi/Mizuno Ken-ichi/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Tjime-resolved absorption and luminescence following electron-hole pair creation in ZnO
Wall R. Andrew/Lipke Kyle C./Ucer K.B./et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
4-(dicyanomethylene)-2-methyl-6-)-(p-dimethylaminostyry)-4H-pyran (DCM)-doping density dependence of luminescence spectra and white emission in polymer light-emitting diodes
Inoue Akinori/Hosokawa Takeshi/Haishi Motoki/Ohtani Naoki
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Gain-narrowed emissions of thiophene/phenylene co-oligomer single crystals
Hiramatsu Toru/Matsuoka Naoki/Yanagi Hisao/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Trap state emission of water-soluble CdS nanocrystals
L~:u W./Tokuhiro Y./Umezu I./et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Lattice-mismatch-strain effects on excitons in GaAs[1_-x]N[x]/GaAs heterostructures
Hashimoto Jun/Nakayama Masaaki
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Single NN pair luminescence ans single photon generation in nitrogen _d-doped GaP
Ikezawa Michio/Sakuma Yoshiki/Watanabe Masato/Masumoto Yasuaki
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
Marinova Maya/Robert Teddy/Juillaguet Sandrine/et al.
Phys. Status Solidi A, Vol: 206, No: 8 , published: 30 March 2009
Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films
Noh Jun Hong/Cho In-Sun/Lee Sangwook/et al.
Phys. Status Solidi A, Vol: 206, No: 9 , published: 30 March 2009
Structural and photoluminescence studies of erbium-implanted nanocrystalline silicon thin films
Cerqueira M.F./Alupim P./Filonovich S.A./et al.
Phys. Status Solidi A, Vol: 206, No: 9 , published: 30 March 2009
Influence of co-deposited active layers on carrier transport and luminescent properties in organic light emitting diodes
Murata Masaya/Yamamoto Takayuki/Haishi Motoki/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Comparison of ITO prepared by capacitive RF magnetorn sputtering and DC facing target sputtering as an anode on the organic light emitting diode
Kim Sang Ho/Yoon Chul
Phys. Status Solidi A, Vol: 206, No: 9 , published: 30 March 2009
Nonifiform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence
Fujiwara K./Jahn U./Luna E./Grahn H.T.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
Optical fabrication of wide-gap semiconductor nanoparticles in superfluid helium
Inaba Kazuhiro/Saito Takuji/Saito Yasuhiko/et al.
Phys. Status Solidi C, Vol: 6, No: 1 , published: 30 March 2009
In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations
Ohno Yutaka/Taishi Toshinori/Yonenaga Ichiro
Phys. Status Solidi A, Vol: 206, No: 8 , published: 30 March 2009
Двухфотонные корреляции люминесценции в условиях бозе-конденсации диполярных экситонов
Горбунов А.В./Тимофеев В.Б./Демин Д.А./Дремин А.А.
Письма в ЖЭТФ, Vol: 90, No: 1-2 , published: 26 March 2009
Photoluminescence studies of layered semiconductor GaS doped with Ge
Shigetomi Shigeru/Ikari Tetsuo
Jpn. J. Appl. Phys., Vol: 48, No: 3R , published: 25 March 2009
Optical properties of uncapped InN nanodots grown at various temperatures
Chen Ching-Yu/Lee Ling/Tai Shin-Kai/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 3R , published: 25 March 2009
Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation
Nakagawa-Toyota Satoko/Tajima Michio/Hirose Kazuyuki/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 3R , published: 25 March 2009
Enhancing the light extraction efficiency of blue sempipolar (1011) nitride-based light emitting diodes through surface patterning
Zhong Hong/Tyagi Anurag/Pfaff Nathan/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 3R , published: 25 March 2009
On the large threshold voltage shifts of nano-structured thin film electroluminescent devices
Sohn Sahgho/Choi Seokcheol/Toyama Toshihiko/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 3R , published: 25 March 2009
Comparison between polar (0001) and semipolar (1122) nitride blue-green light-emitting diodes grown on c- and m-plane sapphire substrates
Meirre Phillippe De/Guehne Tobias/Nemoz Maud/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 3R , published: 25 March 2009
Voltage-controlled nuclear polarization switching in a single InxGa1−xAs quantum dot
M. N. Makhonin, J. Skiba-Szymanska, M. S. Skolnick, H.-Y. Liu, M. Hopkinson, and A. I. Tartakovskii
Phys. Rev. B: Condens. Matter, Vol: 79, No: 12 , published: 19 March 2009
Local density of states, spectrum, and far-field interference of surface plasmon polaritons probed by cathodoluminescence
M. Kuttge, E. J. R. Vesseur, A. F. Koenderink, H. J. Lezec, H. A. Atwater, F. J. García de Abajo, and A. Polman
Phys. Rev. B: Condens. Matter, Vol: 79, No: 11 , published: 17 March 2009
Оптические и рентгеноструктурные исследования многослойных структур на основе твердых растворов InGaN/GaN
Усов С.О./Цацульников А.Ф./Заварин Е.Е./и др.
Физ. тверд. тела, Vol: 51, No: 8 , published: 12 March 2009
Особенности рекомбинационных процессов в пленках CdTe, изготовленных при различных температурах режимах роста и последующих отжигах
Ермолович И.Б./Миленин В.В./Редько Р.А./Редько С.М.
Физ. и техн. полупроводников , Vol: 43, No: 8 , published: 12 March 2009
Люминесценция квантово-размерных нанокристаллов и наностержней селенида кадмия во внешнем электрическом поле
Гуринович Л.И./Лютич А.А./Ступак А.П./и др.
Физ. и техн. полупроводников , Vol: 43, No: 8 , published: 12 March 2009
Фотолюминесценция ZnO, инфильтрованного в трехмерный фотонный кристалл
Грузинцев А.Н./Емельченко Г.А./Масалов В.М.
Физ. и техн. полупроводников , Vol: 43, No: 8 , published: 12 March 2009
Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-guality thick m-plane GaInN underlying layer on grooved GaN
Senda Ryota/Matsubara Tetsuya/Iida Daisuke/et al.
Appl. Phys. Express, Vol: 2, No: 6 , published: 12 March 2009
Аномальное спиновое расщепление электронов в квантовых точках II типа InSb в матрице InAs
Терентьев Я.В./Люблинская О.Г./Торопов А.А./и др.
Физ. и техн. полупроводников , Vol: 43, No: 5 , published: 10 March 2009
Эпитаксия ZnSe на GaAs при использовании в качестве источника соединения ZnSe
Супрун С.П./Шерстякова В.Н./Федосенко Е.В.
Физ. и техн. полупроводников , Vol: 43, No: 11 , published: 09 March 2009
Magneto-optical spectroscopy of excitons and trions in charge-tunable quantum dots
H. Sanada, T. Sogawa, H. Gotoh, Y. Tokura, H. Yamaguchi, H. Nakano, and H. Kamada
Phys. Rev. B: Condens. Matter, Vol: 79, No: 12 , published: 06 March 2009
Dynamics of Trion Formation in InxGa1-xAs Quantum Wells
M. T. Portella-Oberli, J. Berney, L. Kappei, F. Morier-Genoud, J. Szczytko, and B. Deveaud-Plédran
Phys. Rev. Lett., Vol: 102, No: 9 , published: 03 March 2009
Photoluminescence of the ZnSe single crystals doped by thermal diffusion of nitrogen
G.V. Colibaba, D.D. Nedeoglo
Physica B, Vol: 404, No: 2 , published: 28 February 2009
Fabrication and photoluminescence of GaN nanorods by ammoniating Ga2O3 films deposited on Co-coated Si(1 1 1) substrates
Lixia Qin, Chengshan Xue, Yifeng Duan, Liwei Shi
Physica B, Vol: 404, No: 2 , published: 28 February 2009
Photoluminescence studies of Cd1−xZnxS nanocrystals
Karamjit Singh, N.K. Verma, H.S. Bhatti
Physica B, Vol: 404, No: 2 , published: 28 February 2009
Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells
K. Gopalakrishna Naik, K.S.R.K. Rao
Physica B, Vol: 404, No: 2 , published: 28 February 2009
Effect of an External Magnetic Field on the Up-Conversion Photoluminescence of Organic Films: The Role of Disorder in Triplet-Triplet Annihilation
J. Mezyk, R. Tubino, A. Monguzzi, A. Mech, and F. Meinardi
Phys. Rev. Lett., Vol: 102, No: 8 , published: 27 February 2009
Fabrication of asymmetric GaN/InN/InGaN/GaN quantum-well light emitting diodes for reducing the quantum-confined stark effect in the blue-green region
Che Songbek/Yuki Akihiko/Watanabe Hiroshi/et al.
Appl. Phys. Express, Vol: 2, No: 2 , published: 25 February 2009
Continuous-wave operation of InGaN/GaN laser diodes on semipolar (11‾22) plane gallium nitirdes
Asamizu Hirokuni/Saito Makoto/Fujito Kenji/et al.
Appl. Phys. Express, Vol: 2, No: 2 , published: 25 February 2009
Фотолюминесценция ZnGa2O4, активированного Mn, Yb, Sm, Tb
Житарь В.Ф./Мунтян С.П./Павленко В.И.
Неорган. матер., Vol: 45, No: 3 , published: 16 February 2009
Suppression of Mn photoluminescence in ferromagnetic state of Mn-doped ZnS nanocrystals
I. Sarkar, M. K. Sanyal, S. Takeyama, S. Kar, H. Hirayama, H. Mino, F. Komori, and S. Biswas
Phys. Rev. B: Condens. Matter, Vol: 79, No: 5 , published: 11 February 2009
Свойства GaAsN нитевидных нанокристаллов, полученных методом магнетронного осаждения
Сошников И.П./Цырлин Г.Э./Надточий А.М./и др.
Физ. и техн. полупроводников , Vol: 43, No: 7 , published: 05 February 2009
Электронный парамагнитный резонанс и фотолюминесценция в пиролитических пленках нитрида кремния при ионном облучении аргоном и молекулярным азотом
Демидов Е.С./Добчин Н.А./Карзанов В.В./и др.
Физ. и техн. полупроводников , Vol: 43, No: 7 , published: 05 February 2009
Безызлучательная рекомбинация в квантовых точках GaN, сформированных в матрице AlN
Александров И.А./Журавлев К.С./Мансуров В.Г.
Физ. и техн. полупроводников , Vol: 43, No: 6 , published: 05 February 2009
Влияние присоединения биомолекул на фотолюминесцентные и структурные характеристики квантовых точек CdSe-ZnS
Борковская Л.В./Корсунская Н.Е./Крыштаб Т.Г./и др.
Физ. и техн. полупроводников , Vol: 43, No: 6 , published: 05 February 2009
Распределение электрических полей в монокристаллах ZnS:Mn при электролюминесценции
Буланый М.Ф./Коваленко А.В./Полежаев Б.А./Прокофьев Т.А.
Физ. и техн. полупроводников , Vol: 43, No: 6 , published: 05 February 2009
Влияние релаксации напряжений на формирование активной области гетероструктур InGaN/(Al)GaN для светодиодов зеленого диапазона
Сахаров А.В./Лундин В.В./Заварин Е.Е./и др.
Физ. и техн. полупроводников , Vol: 43, No: 6 , published: 05 February 2009
Влияние самокомпенсации на время жизни электрона в теллуриде кадмия, легированном галлием
Рабенок Е.В./Гапанович М.В./Новиков Г.Ф./Один И.Н.
Физ. и техн. полупроводников , Vol: 43, No: 7 , published: 05 February 2009
Multi-section quantum dot superluminescent diodes for spectral shape engineering
Judson P.D.L./Groom K.M./Childs D.T.D./et al.
IET Optoelectron, Vol: 3, No: 2 , published: 04 February 2009
Исследование многослойных светодиодных гетероструктур на основе InGaN/GaN методами рентгеноспектрального микроанализа и катодолюминесценции
Домрачева Я.В./Заморянская М.В./Попова Т.Б./Флегонтова Е.Ю.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2009, No: 8 , published: 04 February 2009
Сульфидная пассивация подложек InAs(100) в растворах Na[2]S
Львова Т.В./Седова И.В./Дунаевский М.С./и др.
Физ. тверд. тела, Vol: 51, No: 6 , published: 02 February 2009
Термо- и фотостимулированные процессы поляризации и деполяризации в CdI[2]:Ag
Новосад С.С./Каливошка Б.М.
Физ. тверд. тела, Vol: 51, No: 6 , published: 02 February 2009
Enhancement of exciton-phonon interaction in InGaN quantum wells induced by electron-beam irradiation
Ding Kai/Zeng Yiping/Duan Ruifei/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 01 February 2009
Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate
Ning Jiqiang/Xu Shijie/Wang Rongxin/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 01 February 2009
Generation and wavelength control of resonant luminescence from silicon photonic crystal microcavities with Ge dots
Xia Jinsong/Tominaga Ryuichiro/Fukamitsu Seiji/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 01 February 2009
Ultrafast exciton dynamics in a ZnO thin film
Wang Hsiang-Chen/Yang C.C./Feng Shih-Wei/et al.
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 01 February 2009
Raman, Far Infrared, and Mössbauer Spectroscopy of CuFeS2 Nanocrystallites
Wang Chunrui/Xue Shaolin/Hu Junqing/Tang Kaibin
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 01 February 2009
ZnTe-based light-emitting diodes fabricated by solid-state diffusion of Al through Al oxide layer
Tanaka Tooru/Nishio Mitsuhiro/Guo Qixin/Ogawa Hiroshi
Jpn. J. Appl. Phys., Vol: 48, No: 2R , published: 01 February 2009
Вплив домiшки азоту на фотолюмiнесценцiю кремнiйових нанокластерiв в матрицi SiO[2]
Гамов Д./Хацевич I./Литовченко В./и др.
Укр. фiз. ж., Vol: 54, No: 4 , published: 29 January 2009
Improved optical performance of GaN grown on pattered sapphire substrate
Yao Guangrui/Fan Guanghan/Li Shuti/et al.
J. Semicond., Vol: 30, No: 1 , published: 27 January 2009
Downward uniformity and optical properties of porous silicon layers
Long Yongfu/Ge Jin
J. Semicond., Vol: 30, No: 5 , published: 27 January 2009
Emission of low-dimensional structures formed by femtosecond laser interaction with semiconductor
Zhang Rongtao/Xu Li/Wu Keyue
Acta opt. sin=Guangxue xuebao , Vol: 29, No: 3 , published: 27 January 2009
Monolithic white LED based on Al[x]Ga[1_-x]N/In[y]Ga[1_-y]N DBR resonant-cavity
Chen Yu/Huang Lirong/Zhu Shanshan
J. Semicond., Vol: 30, No: 1 , published: 27 January 2009
Temperature: a critical parameter affecting the optical properties of porous silicon
Long Yongfu/Ge Jin/Ding Xunmin/Hou Xiaoyuan
J. Semicond., Vol: 30, No: 6 , published: 25 January 2009
Time-resolved measurements of dislocation-related photoluminescence bands in silicon
Steinman E.A./Kenyon A.J./Tereschchenko A.N.
Phys. Status Solidi C, Vol: 6, No: 8 , published: 25 January 2009
Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure
Mchedlidze Teimuraz/Wilhelm Thomas/Arguirov Tzanimir/et al.
Phys. Status Solidi C, Vol: 6, No: 8 , published: 25 January 2009
Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
Gao Wei/Guo Wiling/Zhu Yanxu/et al.
J. Semicond., Vol: 30, No: 6 , published: 25 January 2009
Novel phosphors based on porous mateirals
Tiginyanu I.M./Ursaki V.V./Sirbu L./et al.
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
Preparation and characterization of QDs all-silicon
Giovannozzi Andrea M./Rocchia Massimiliano/Troia Adriano/et al.
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
Excitonic transitions in silicon nanostructures probed by time-resolved photoluminescence spectroscopy
Dovrat M./Shalibo Y./Arad N./et al.
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
Microstructure and optical properties of porous silicon after plasma asisted nitridation
Frascella F./Mandracci P./Venturello A./et al.
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
EPR and photoluminescence diagnostics of singlet oxygen generation on porous silicon surface
Konstantinova E.A./Demin V.A./Ryabchikov Yu.V./et al.
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
Photoluminescence of nanoporous silicon grains in TiO[2] matrices
Frank Otakar/Kavan Ladislav/Kusova Katerina/et al.
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
Photoinduced fluorescence enhancement and energy transfer effects of quantum dots porous silicon
DeLouise Lisa A./Ouyang Huimin
Phys. Status Solidi C, Vol: 6, No: 7 , published: 23 January 2009
Nitride-based quantum structures and devices on modified GaN substrates
Perlin Piotr/Franssen Gijs/Szeszko Justyna/et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hirayama Hideki/Fujikawa Sachie/Noguchi Norimichi/et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
Structure and photoluminescence studies of porous silicon formed in ferric ion containing stain etchants
Dudley Margaret E./Kolasinski Kurt W.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
Singlet oxygen inhibits nonradiative defects in porous silicon
Pikulev V.B./Kuznetsov S.N./Kuznetsov A.S./et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
Photoexcited silicon nanocrystals: mediators for the excitation of organic molecules
Goller Bernhard/Polisski Sergej/Kovalev Dmitry
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
New developments in green LEDs
Peter Matthias/Laubsch Ansgar/Bergbauer Werner/et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
Tsuzuki Hirotoshi/Mori Fumiaki/Takeda Kenichiro/et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
Recent advances in GaN transistors for future emerging applications
Yamagihara Manabu/Uemoto Yasuhiro/Ueda Tetsuzo/et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
m-Plane GaIN light emiting diodes grown on patterned a-plane sapphire substrates
Saito Yoshiki/Okuno Koji/Boyama Shinya/et al.
Appl. Phys. Express, Vol: 2, No: 4 , published: 23 January 2009
Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs
Fundling Sonke/Li Shunfeng/Sokmen Unsal/et al.
Phys. Status Solidi A, Vol: 206, No: 6 , published: 23 January 2009
Misfit strain relaxation by stacking fult generation in InGaN quantum wells grown on m-plane GaN
Fischer Alec M./Wu Zhihao/Sun Kewei/et al.
Appl. Phys. Express, Vol: 2, No: 4 , published: 23 January 2009
Optical pumping and negative luminescence polarization in charged GaAs quantum dots
Andrew Shabaev, Eric A. Stinaff, Allan S. Bracker, Daniel Gammon, Alexander L. Efros, Vladimir L. Korenev, and Igor Merkulov
Phys. Rev. B: Condens. Matter, Vol: 79, No: 3 , published: 22 January 2009
Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors
Zhu Xiaming/Wu Huizhen/Wang Shuangjiang/et al.
J. Semicond., Vol: 30, No: 3 , published: 16 January 2009
Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer
Jia Renxu/Zhang Yimen/Zhang Yuming/et al.
J. Semicond., Vol: 30, No: 3 , published: 16 January 2009
Anomalous Circular Polarization of Photoluminescence Spectra of Individual CdSe Nanocrystals in an Applied Magnetic Field
H. Htoon, S. A. Crooker, M. Furis, S. Jeong, Al. L. Efros, and V. I. Klimov
Phys. Rev. Lett., Vol: 102, No: 1 , published: 09 January 2009
Photoluminescence dynamics and reduced Auger recombination in Si1−xGex/Si superlattices under high-density photoexcitation
Takeshi Tayagaki, Susumu Fukatsu, and Yoshihiko Kanemitsu
Phys. Rev. B: Condens. Matter, Vol: 79, No: 4 , published: 06 January 2009
Gamma-X mixing in phosphorus-doped silicon nanocrystals: Improvement of photon generation efficiency
Vladimir A. Belyakov and Vladimir A. Burdov
Phys. Rev. B: Condens. Matter, Vol: 79, No: 3 , published: 05 January 2009
Действие магнитного поля на перенос энергии зонных состояний в 3d-оболочку Mn2+ в матрице CdMgTe с ультратонкими слоями CdMnTe
Агекян В.Ф./Holtz P.O./Karczewski G./и др.
Физ. тверд. тела, Vol: 52, No: 1 , published: 01 January 2009
Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures
Hasbullah, N.F.; Jo Shien Ng; Hui-Yun Liu; Hopkinson, M.; David, J.; Badcock, T.J.; Mowbray, D.J.
IEEE J. Quantum Electron. , Vol: 45, No: 1 , published: 01 January 2009
Catalytic role of adsorbates in the photoluminescence emission of Si nanocrystals
Giuseppe Faraci, Santo Gibilisco, Agata R. Pennisi, Giorgia Franzó, Salvatore La Rosa, and Luca Lozzi
Phys. Rev. B: Condens. Matter, Vol: 78, No: 24 , published: 30 December 2008
Суперлюминесцентный ИК излучатель на кристалле ZnSe:Fe{2+}, работающий при комнатной температуре
Ильичев Н.Н./Данилов В.П./Калинушкин В.П./и др.
Квант. электрон., Vol: 38, No: 2 , published: 24 December 2008
Influences of N[2] flow rate on the crystalline characteristics of GaN films deposited on glass substrate at low temperature
Wang Wenyan/Qin Fuwen/Wu Aimin/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 12 , published: 24 December 2008
Effect of nitrogen interactions on photoluminescence linewidth broadening in dilute nitride semiconductors
I. Bosa, D. McPeake, and S. Fahy
Phys. Rev. B: Condens. Matter, Vol: 78, No: 24 , published: 23 December 2008
Remarkably long-ranged repulsive interaction between adsorbed CO molecules on Pt modified Ge(001)
Daan Kockmann, Bene Poelsema, and Harold J. W. Zandvliet
Phys. Rev. B: Condens. Matter, Vol: 78, No: 24 , published: 22 December 2008
Synthesis and optical characterization of CdS nanocomposites
Devi R./Kalita P.K./Purkayastha P./Sarma B.K.
Indian J. Phys., Vol: 82, No: 6 , published: 22 December 2008
Structural and optical properties of CdS nanoparticles
Barman Jayanta/Sarma K.C.
Indian J. Phys., Vol: 82, No: 7 , published: 22 December 2008
Выращивание гетероструктур GaN/InGaN методом аммиачной МЛЭ с использованием "смачивающего" слоя металлического индия
Алексеев А.Н./Бырназ А.Э./Красовицкий Д.М./и др.
Письма в ЖТФ, Vol: 34, No: 18 , published: 21 December 2008
Вплив _g-опромiнення на оптичнi властивостi структур nc-Si/SiO[2], легованих азотом
Лiсовський I.П./Литовченко В.Г./Войтович М.В./и др.
Укр. фiз. ж., Vol: 53, No: 10 , published: 21 December 2008
Вплив бiомолекул на люмiнесценцiю дефектiв в квантових точках CdSe/ZnS
Барковська Л.В./Гермаш Л.П./Корсуньска Н.О./Печерська Е.Ю.
Укр. фiз. ж., Vol: 53, No: 10 , published: 21 December 2008
Luminescent materials based on thin metal oxide films doped with rare earthions
Kanarjov P./Reedo V./Oja Acik I./et al.
Физ. тверд. тела, Vol: 50, No: 9 , published: 20 December 2008
Возбуждение эрбия в гетерогенной нанокристаллической матрице аморфного кремния
Бреслер М.С./Гусев О.Б./Теруков Е.И./и др.
Физ. тверд. тела, Vol: 50, No: 9 , published: 20 December 2008
Влияние легирования Sc и Yb на электрические и люминесцентные свойства кремния, полученного методом Стокбаргера
Шамирзаев Т.С./Непомнящих А.И./Красин Б.А./и др.
Физ. тверд. тела, Vol: 50, No: 9 , published: 20 December 2008
Green photoluminescence from GaIn photonic crystals
Kitagawa Hitoshi/Suto Toshide/Fujita Masayuki/et al.
Appl. Phys. Express, Vol: 1, No: 3 , published: 20 December 2008
Антиструктурные дефекты в кристаллах InP и InP, облученных _g-квантами
Алиев М.И./Рашидова Ш.Ш./Гусейнова М.А./Гаджиева Н.Н.
Физ. и химия обраб. матер., Vol: 2008, No: 5 , published: 20 December 2008
Low-temperature growth of ZnO films on GaAs by metal organic chemical vapor deposition
Shi Huiling/Ma Xiaoyu/Hu Like/Chong Feng
Bandaoti xuebao = Chin. J. Semicond., Vol: 2008, No: 29 , published: 15 December 2008
Optical and electrical properties of GaN: Mg grown by MOCVD
Wang Lili/Zhang Shuming/Yang Hui/Liang Junwu
Bandaoti xuebao = Chin. J. Semicond., Vol: 2008, No: 29 , published: 15 December 2008
Temperature-dependent Auger recombination dynamics in luminescent silicon nanowires
Alex R. Guichard, Rohan D. Kekatpure, Mark L. Brongersma, and Theodore I. Kamins
Phys. Rev. B: Condens. Matter, Vol: 78, No: 23 , published: 15 December 2008
Organic light-emitting diodes by doping Liq into and electron transport layer
Xu Wei/Lu Fuhan/Jiang Xueyin/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 2008, No: 29 , published: 15 December 2008
Електрооптичнi властивостi вихiдних та опромiнених фосфiдогалiевих p_-n-переходiв
Гришин Ю.Г./Друзенко Н.В./Конорева О.В./и др.
Металлофиз. и нов. технол., Vol: 30, No: сп. в , published: 14 December 2008
Электрические свойства, фотопроводимость и фотолюменесценция крупнозернистого p-ZnTe
Клевков Ю.В./Колосов С.А./Кривобок В.С./и др.
Физ. и техн. полупроводников , Vol: 42, No: 11 , published: 10 December 2008
Магнитооптика одиночной квантовой ямы CdMnSe/CdMgSe
Решина И.И./Иванов С.В.
Физ. и техн. полупроводников , Vol: 42, No: 11 , published: 10 December 2008
Влияние электрического поля при получении пленок a-SiO[x]:H методом магнетронного распыления на постоянном токе на их состав и интенсивность фотолюминесценции ионов эрбия
Ундалов Ю.К./Теруков Е.И./Гусев О.Б./и др.
Физ. и техн. полупроводников , Vol: 42, No: 11 , published: 10 December 2008
Краевая электролюминесценция эффективного точечного кремниевого светодиода в области температур 80_-300 К
Емельянов А.М.
Физ. и техн. полупроводников , Vol: 42, No: 11 , published: 10 December 2008
Оптические свойства голубых светодиодов в системе InGaN/GaN при высокой плотности тока
Бочкарева Н.И./Горбунов Р.И./Клочков А.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 11 , published: 10 December 2008
Giant Rabi splitting in a bulk CuCl microcavity
Goro Oohata, Takashi Nishioka, Daegwi Kim, Hajime Ishihara, and Masaaki Nakayama
Phys. Rev. B: Condens. Matter, Vol: 78, No: 23 , published: 09 December 2008
Photoluminescence experiment on quantum dots embedded in a large Purcell-factor microcavity
B. Gayral and J. M. Gérard
Phys. Rev. B: Condens. Matter, Vol: 78, No: 23 , published: 09 December 2008
Photoluminescence dynamics of Mn{2+}-doped CdS/ZnS core/shell nanocrystals: Mn{2+} concentration dependence
Ishizumi Atsushi/Jojima Emiko/Yamamoto Aishi/Kanemitsu Yoshihiko
J. Phys. Soc. Jpn., Vol: 77, No: 5 , published: 08 December 2008
Люминесценция кубического нитрида бора, активированного тулием
Шишонок Е.М./Тринклер Л./Леончик С.В./Берзиня Б.
Ж. прикл. спектроскопии, Vol: 75, No: 4 , published: 07 December 2008
Излучение пластин селенида цинка при возбуждении импульсным электрическим полем
Бережной К.В./Насибов А.С./Шапкин П.В./и др.
Квант. электрон., Vol: 38, No: 9 , published: 04 December 2008
Релаксация параметров тонкопленочных электролюминесцентных излучателей на основе ZnS:Mn при выключении
Гурин Н.Т./Сабитов О.Ю.
Письма в ЖТФ, Vol: 34, No: 7 , published: 04 December 2008
Controlling fluorescence intermittency of a single colloidal CdSe/ZnS quantum dot in a half cavity
Yanpeng Zhang, Vamsi K. Komarala, Carl Rodriguez, and Min Xiao
Phys. Rev. B: Condens. Matter, Vol: 78, No: 24 , published: 03 December 2008
Спектры фотолюминесценции гетероструктур n-ZnO/p-GaN и p-AlGaN
Мездрогина М.М./Криволапчук В.В./Феоктистов Н.А./и др.
Физ. и техн. полупроводников , Vol: 42, No: 7 , published: 03 December 2008
Нановключения InGaN в матрице AlGaN
Сизов В.С./Цацульников А.Ф./Лундин В.В.
Физ. и техн. полупроводников , Vol: 42, No: 7 , published: 03 December 2008
Методы управления длиной волны излучения в гетероструктурах InAs/GaAsN/InGaAsN на подложках GaAs
Мамутин В.В./Егоров А.Ю./Крыжановская Н.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 7 , published: 03 December 2008
Surface propetties of the AlGaN/GaN superlattice grown at different temperatures by metalorganic chemical vapor deposition
Lai Wei-Chih/Kuo Cheng-Huang/Yen Wei-Yu/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 12R , published: 01 December 2008
Photoluminescence and optical gain properties of a crystalline thophene/phenylene co-oligomer
Kanazawa Shusuke/Uchida Atsuko/Ichikawa Musubu/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 12R , published: 01 December 2008
Источники спонтанного излучения на основе арсенида индия
Зотова Н.В./Ильинская Н.Д./Карандашев С.А./и др.
Физ. и техн. полупроводников , Vol: 42, No: 6 , published: 01 December 2008
Изменение оптических свойств нанокластеров CdS, полученных методом Ленгмюра_-Блоджетт, при пассивации в аммиаке
Багаев Е.А./Журавлев К.С./Свешникова Л.Л./Щеглов Д.В.
Физ. и техн. полупроводников , Vol: 42, No: 6 , published: 01 December 2008
Сенсибилизованная антраценом замедленная флуоресценция родамина С в пленках Ленгмюра _- Блоджетт
Ибраев Н.Х.
Изв. вузов. Физ., Vol: 51, No: 7 , published: 01 December 2008
Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes
Sun-Rong Jan; Tzu-Huan Cheng; Tzer-An Hung; Ping-Sheng Kuo; Ming Han Liao; Yu Deng; Chee Wee Liu
IEEE Trans. Electron Devices , Vol: 55, No: 12 , published: 01 December 2008
Room-Temperature Visible Electroluminescence From Aluminum Nitride Thin Film Embedded With Aluminum Nanocrystals
Ming Yang; Chen, T.P.; Liu, Y.; Ding, L.; Wong, J.I.; Liu, Z.; Zhang, S.; Zhang, W.; Zhu, F.
IEEE Trans. Electron Devices , Vol: 55, No: 12 , published: 01 December 2008
Active Region Cascading for Improved Performance in InAs–GaSb Superlattice LEDs
Koerperick, E.J.; Olesberg, J.T.; Hicks, J.L.; Prineas, J.P.; Boggess, T.F.
IEEE J. Quantum Electron. , Vol: 44, No: 12 , published: 01 December 2008
Мощные одномодовые лазерные диоды на основе квантово-размерных AlInGaAs/InP гетероструктур (λ1.1-1.2 mm)
Мурашова А.В./Пихтин Н.А./Фетисова Н.В./и др.
Письма в ЖТФ, Vol: 34, No: 13 , published: 01 December 2008
Direct Observation of an Ordered Phase in (1120) Plane InGaN Alloy
Kusakabe Kazuhide/Yamazaki Takashi/Kuramochi Koji/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 12R , published: 01 December 2008
Спектры излучения и возбуждения керамик ZnO:Ga и ZnO:Ga,N
Родный П.А./Ходюк И.В./Горохова Е.И./и др.
Оптика и спектроскопия, Vol: 105, No: 6 , published: 26 November 2008
Определение соотношения между величиной спин-орбитального и внутрицентрового расщепления акцепторов по поляризованной люминесценции в ортогональной конфигурации
Осипов Е.Б./Осипова Н.А./Цветкова С.Н./Канглиев С.Д.
Изв. вузов. Физ., Vol: 51, No: 6 , published: 25 November 2008
Defects and properties of antimony-doped nO single crystal
Zhang Rui/Zhang Fan/Zhao Youwen/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 10 , published: 24 November 2008
Polarization-angle dependence of photoluminescence intensity of ordered GaInP[2] layers: observation of polarization memory
Prutskij T./Pelosi C./Brito-Orta R.
Cryst. Res. Technol., Vol: 43, No: 9 , published: 20 November 2008
Hydrothermal growth of ZnS microspheres and their temperature-dependent luminescence properties
Zhang Li/Yang Liangbao
Cryst. Res. Technol., Vol: 43, No: 10 , published: 20 November 2008
Morphology and photoluminescence properties of ZnO nanostructures fabricated with different given time of Ar
Wang D.D./Yang J.H./Yang L.L./et al.
Cryst. Res. Technol., Vol: 43, No: 10 , published: 20 November 2008
Mechanism of microwave-induced photoluminescence modulation and optically detected resonances due to a two-dimensional electron gas in a heterostructure
I. Baskin, B. M. Ashkinadze, E. Cohen, and L. N. Pfeiffer
Phys. Rev. B: Condens. Matter, Vol: 78, No: 19 , published: 19 November 2008
Stoichiometric single crystal growth of AgGaS[2] by iodine transport method and characterization
Prabukanthan P./Dhanasekaran R.
Cryst. Res. Technol., Vol: 43, No: 12 , published: 19 November 2008
Synthesis and optical properties of ZnO nanorods
Lang Jihui/Yang Jinghai/Li Changsheng/et al.
Cryst. Res. Technol., Vol: 43, No: 12 , published: 19 November 2008
Crystalline bismuth oxide nanorods fabricated on Pt-coated substrates using a trimethylbismuth and oxygen mixture
Kim Hyoun Woo/Lee Jong Woo/Shim Seung Hyun/et al.
Cryst. Res. Technol., Vol: 43, No: 7 , published: 19 November 2008
Growth and luminescence properties of large-scale zinc oxide nanotetrapods
Panda S.K./Singh N./Hooda J./Jacob C.
Cryst. Res. Technol., Vol: 43, No: 7 , published: 19 November 2008
Photoconductivity and photoluminescence in chemically deposited (Cd-Z)S:CdCl2,Tb films
Bhushan S./Pillai S.
Cryst. Res. Technol., Vol: 43, No: 7 , published: 19 November 2008
Energy transfer enables 1.53 _mm photoluminescence from erbium-doped TiO[2] semiconductor nanocrystals synthesized by Ar/O[2] radio-frequency thermal plasma
Li Ji-Guang/Wang Xiaoxhui/Tang Chengchun/et al.
J. Am. Ceram. Soc. , Vol: 91, No: 6 , published: 18 November 2008
Chemical precipitation synthesis and optical properties of ZnO/SiO[2] nanocomposites
Yang Huaming/Xiao Yu/Liu Kun/Feng Qiming
J. Am. Ceram. Soc. , Vol: 91, No: 5 , published: 16 November 2008
InGaAlN гетероструктуры для светодиодов, выращенные на профилированных сапфировых подложках
Лундин В.В./Заварин Е.Е./Синицын М.А./и др.
Письма в ЖТФ, Vol: 34, No: 21 , published: 16 November 2008
Nanoscale ZnO and Al-doped ZnO coatings on ZnS:Ag phosphors and their cathodoluminescent properties
Choi Sung-Woo/Hong Seong-Hyeon/Ko Ki-Young/Do Young Rag
J. Am. Ceram. Soc. , Vol: 91, No: 2 , published: 16 November 2008
Preparation and cathodoluminescence of Mg-doped and Zn-doped GaN powders
Li Hui-Li/Xie Rong-Jun/Hirosaki Naoto/et al.
J. Am. Ceram. Soc. , Vol: 91, No: 5 , published: 16 November 2008
Spin-dependent kinetics of polaron pairs in organic light-emitting diodes studied by electroluminescence detected magnetic resonance dynamics
C. G. Yang, E. Ehrenfreund, F. Wang, T. Drori, and Z. V. Vardeny
Phys. Rev. B: Condens. Matter, Vol: 78, No: 20 , published: 12 November 2008
Reversible and irreversible spectral shifts during photoluminescence blinkng in a single CdSe/ZnS core/shell nanocrystal
Ito Yuichi/Matsuda Kazunari/Kanemitsu Yoshihiko
J. Phys. Soc. Jpn., Vol: 77, No: 10 , published: 11 November 2008
Wavepacket motion in self-trapped exciton of quasi-one-dimensional halogen-bridged Pt complex. _(Pt(en)[2]_)_(Pt(en)[2]I[2]_) (ClO[4])[4], observed by femtosecond time resolved luminescence spectroscopy
Yasukawa Keizo/Takahashi Youtarou/Kurita Susumu/Suemoto Tohru
J. Phys. Soc. Jpn., Vol: 77, No: 6 , published: 11 November 2008
Photocurrent-induced changes in the excitonic photoluminescence from a single heterojunction quantum well
Patrick A. Folkes and Yingmei Liu
Phys. Rev. B: Condens. Matter, Vol: 78, No: 19 , published: 06 November 2008
Центры сенсибилизированной антистоксовой люминесценции в кристаллах AgCl
Смирнов М.С./Овчинников О.В./Латышев А.Н./и др.
Физ. и техн. полупроводников , Vol: 43, No: 7 , published: 05 November 2008
Влияние химического травления на люминесцентные свойства наностержней оксида цинка
Грузинцев А.Н./Редькин А.Н./Якимов Е.Е./и др.
Неорган. матер., Vol: 44, No: 9 , published: 02 November 2008
Photoluminescence study of SiC nanotubes
Nagarajan K./Raman S. Kumara
Bulg. J. Phys., Vol: 35, No: 1 , published: 02 November 2008
Optical properties of PbTe/CdTe quantum wells
Xu Tianning/Li Jiahui/Zhang Lei/Wu Huizhen
Acta opt. sin=Guangxue xuebao , Vol: 28, No: 8 , published: 02 November 2008
Effect of deposition conditions on photoluminescence of CuInSe2 thin films prepared by spin coating technique
Merdes Saoussen/Kinoshita Atsuki/Hadjoub Zahia/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 11R , published: 01 November 2008
Characterization of phosphorus diffused ZnO bulk single crystals
Zhang Rui/Zhang Fan/Zhao Youwen/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 9 , published: 30 October 2008
О выборе начального приближения в задаче идентификации параметров прямозонных полупроводников методом катодолюминесцентной микроскопии
Гагарин Ю.Е./Михеев Н.Н./Поляков А.Н./Степович М.А.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2008, No: 9 , published: 30 October 2008
Optical and structural properties of ZnO nanorods grown on polyimide films
Kitamura Kokoro/Yatsui Takashi/Ohtsu Motoichi
Appl. Phys. Express, Vol: 1, No: 8 , published: 29 October 2008
Photoluminescence from epitaxial films of perovskite-type alkaline-earth stannates
Ueda Kazushide/Maeda Tsuyoshi/Nakayashiki Kensuke/et al.
Appl. Phys. Express, Vol: 1, No: 1 , published: 29 October 2008
Compositional dependence of nonpolar m-plane In[x]Ga[1_-x]N/GaN light emitting diodes
Yamada Hisashi/Iso Kenji/Saito Makoto/Masui Hisashi/et al.
Appl. Phys. Express, Vol: 1, No: 4 , published: 29 October 2008
Photon correlation in GaAs self-assembled quantum dots
Kuroda Takashi/Abbarchi Marco/Mano Takaaki/et al.
Appl. Phys. Express, Vol: 1, No: 4 , published: 29 October 2008
Blue-light-emitting ambipolar field-effect transistors using an organic single crystal of 1,4-bis(4-methylstyryl)benzene
Nakanotani Hajime/Kabe Ryota/Yahiro Masayuki/et al.
Appl. Phys. Express, Vol: 1, No: 9 , published: 29 October 2008
Sb surfactant effect of defect evolution in compressively strained In[0.80]Ga[0.20]As quantum well on InP grown by metalorganic vapor phase epitaxy
Sato Tomonari/Kondo Yasuhiro/Sekiguchi Takashi/Suemasu Takashi
Appl. Phys. Express, Vol: 1, No: 11 , published: 29 October 2008
Characterization of depletion layer using photoluminescence technique
Singh Vipul/Thakur Anil K./Pandey Shyam S./et al.
Appl. Phys. Express, Vol: 1, No: 2 , published: 29 October 2008
Continous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitiride
Kubota Masashi/Okamoto Kuniyoshi/Tanaka Taketoshi/Ohta Hiroaki
Appl. Phys. Express, Vol: 1, No: 1 , published: 29 October 2008
Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward Tailor-Made solid-stte lighting
Funato Mitsuru/Kondou Takeshi/Hayashi Keita/et al.
Appl. Phys. Express, Vol: 1, No: 1 , published: 29 October 2008
227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AlN buffer with reduced threading dislocation density
Hirayama Hideki/Noguchi Norimichi/Yatabe Tohru/Kamata Norihiko
Appl. Phys. Express, Vol: 1, No: 5 , published: 29 October 2008
Room-temperature 1.6 _mm electroluminescence from p{+}-Si/_b-FeSi[2]/n{+}-Si diodes on Si(001) without high-temperature annealing
Koizumi Tomoaki/Murase Shigemitsu/Suzuno Mitsushi/Suemasu Takashi
Appl. Phys. Express, Vol: 1, No: 5 , published: 29 October 2008
Blue (Ga,In)N/GaN light emitting diodes on Si(110) substrate
Damilano Benjamin/Natali Franck/Brault Julien/et al.
Appl. Phys. Express, Vol: 1, No: 12 , published: 29 October 2008
Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes
Wang Lai/Wang Jiaxing/Li Hongtao/et al.
Appl. Phys. Express, Vol: 1, No: 2 , published: 29 October 2008
Improved room-temperature 1.6 _mm electroluminescence from p-Si/_b-FeSi[2]/In-Si double heterostructures light-emitting diodes
Suzuno Mitsushi/Murase Shigemitsu/Koizumi Tomoaki/Suemasu Takashi
Appl. Phys. Express, Vol: 1, No: 2 , published: 29 October 2008
Broadening of single quantum dot exciton luminescence spectra due to interaction with randomly fluctuating environmental charges
H. Kamada and T. Kutsuwa
Phys. Rev. B: Condens. Matter, Vol: 78, No: 15 , published: 27 October 2008
Time-resolved emssion of excitons in CuInS2 crystals (Review Paper)
Wakita Kazuki/Nishi Kazuhito/Ohta Yoshihiko/et al.
Jpn. J. Appl. Phys., Part 1, Vol: 47, No: 10S , published: 25 October 2008
Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition (Communication)
Natalie Fellows, Hitoshi Sato, Hisashi Masui, Steven P. DenBaars, and Shuji Nakamura
Jpn. J. Appl. Phys., Vol: 47, No: 10R , published: 25 October 2008
Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
Hea Jeong Cheong, Atsushi Tanaka, Daihei Hippo, Kouichi Usami, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda
Jpn. J. Appl. Phys., Vol: 47, No: 10R , published: 25 October 2008
Characterization and Cathodoluminescence of Beak-Like SnO2 Nanorods
Yu-Hung Lin, Chun-Cha Kuo, Jyh-Ming Wu, Uei-Shin Chen, Yee-Shyi Chang, and Han C. Shih
Jpn. J. Appl. Phys., Vol: 47, No: 10R , published: 25 October 2008
Energy transfer in mixed CdSe and Au nanoparticle monolayers studied by simultaneous photoluminescence and Raman spectral measurements
Masaki Kawai, Aishi Yamamoto, Norihiro Matsuura, and Yoshihiko Kanemitsu
Phys. Rev. B: Condens. Matter, Vol: 78, No: 15 , published: 24 October 2008
Центры люминесценции в керамиках _a-Bi[2]O[3]
Бордун О.М./Кухарский И.И./Дмитрук В.В./и др.
Ж. прикл. спектроскопии, Vol: 75, No: 5 , published: 24 October 2008
Исследование свойств эпитаксиального и слиткового антимонида галлия
Хвостиков В.П./Сорокина С.В./Потапович Н.С./и др.
Физ. и техн. полупроводников , Vol: 42, No: 10 , published: 24 October 2008
Экситонные состояния и фотолюминесценция кремниевых и германиевых нанокристаллов в матрице Al[2]O[3]
Купчак И.М./Крюченко Ю.В./Корбутяк Д.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 10 , published: 24 October 2008
Роль флуктуаций потенциала в энергетической структуре квантовых ям GaAs/AlGaAs с A{+}-центрами
Петров П.В./Иванов Ю.Л./Михрин В.С./Жуков А.Е.
Физ. и техн. полупроводников , Vol: 42, No: 10 , published: 24 October 2008
Влияние уровня возбуждения на оптические свойства микродиска GaAs_-AlGaO с активной областью на основе квантовых точек InAs
Надточий А.М./Блохин С.А./Сахаров А.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 10 , published: 24 October 2008
Формирование метастабильных надбарьерных дырочных состояний в гетероструктурах 2-го типа ZnSe/BeTe при высокой плотности оптического возбуждения
Максимов А.А./Зайцев С.В./Филатов Е.В./и др.
Письма в ЖЭТФ, Vol: 88, No: 7-8 , published: 24 October 2008
Research applications in III-nitrides with cathodoluminescence unitized systems
Zhao Hong/Zhang Rong/Xie Zili/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 6 , published: 24 October 2008
Temperature-dependent midinfrared photoluminescence of epitaxial PbTe/CdTe quantum dots and calculation of the corresponding transition energy
T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, and W. Heiss
Phys. Rev. B: Condens. Matter, Vol: 78, No: 16 , published: 23 October 2008
Evidence for Mn{2+} fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality
Baranov P.G./Romanov N.G./Tolmachev D.O./et al.
Письма в ЖЭТФ, Vol: 88, No: 9-10 , published: 23 October 2008
Спектрально-люминесцентное исследование образования комплексов квантовая точка/молекула сульфофталоцианина в водном растворе
Орлова А.О./Маслов В.Г./Баранов А.В./и др.
Оптика и спектроскопия, Vol: 105, No: 5 , published: 23 October 2008
Люминесценция нанокомпозита на основе синтетического опала, наполненного оксидом цинка
Курбанов С.С./Шаймарданов З.Ш./Касымджанов М.А./и др.
Оптика и спектроскопия, Vol: 105, No: 5 , published: 23 October 2008
Фотолюминесценция самоформирующихся нанокластеров в гетероструктурах GeSi/Si, выращенных методом сублимационной молекулярно-лучевой эпитаксии в среде GeH[4]
Филатов Д.О./Круглова М.В./Исаков М.А./и др.
Неорган. матер., Vol: 44, No: 11 , published: 22 October 2008
Оптические и фотолюминесцентные свойства стеклообразного As[2]S[3], полученного при различных режимах синтеза
Бабаев А.А./Мурадов Р.А./Султанов С.Б./Асхабов А.М.
Неорган. матер., Vol: 44, No: 11 , published: 22 October 2008
Особенности спектров люминесценции кристаллов ZnS(O) и ZnS~xCu(O) с позиций теории непересекающихся зон
Морозов Н.К./Мидерос Д.А./Галстян В.Г./Гаврищук Е.М.
Физ. и техн. полупроводников , Vol: 42, No: 9 , published: 22 October 2008
Состав и параметры доменов, образующихся в результате спинодального распада четверных твердых растворов в эпитаксиальных гетероструктурах GaInP/Ga[x]In[1_-x]As[y]P[1_-y]/GaInP/GaAs(001)
Домашевская Э.П./Гордиенко Н.Н./Румянцева Н.А./и др.
Физ. и техн. полупроводников , Vol: 42, No: 9 , published: 22 October 2008
Краевая люминесценция наностержней ZnO при оптическом возбуждении большой мощности
Грузинцев А.Н./Редькин А.Н./Якимов Е.Е./Бартхоу К.
Физ. и техн. полупроводников , Vol: 42, No: 9 , published: 22 October 2008
Фотолюминесценция нанокластеров GeSi/Si, формирующихся в процессе сублимационной молекулярно-лучевой эпитаксии в среде германа
Филатов Д.О./Круглова М.В./Исаков М.А./и др.
Физ. и техн. полупроводников , Vol: 42, No: 9 , published: 22 October 2008
Магнитофотолюминесценция в разъединенном гетеропереходе II типа n-GaInAsSb/p-InAs
Моисеев К.Д./Михайлов М.П./Яковлев Ю.П./и др.
Физ. и техн. полупроводников , Vol: 42, No: 9 , published: 22 October 2008
Математическое моделирование зависимостей интенсивности монохроматической катодолюминесценции от энергии электронов пучка для трехслойной полупроводниковой структуры
Снопова М.Г./Михеев Н.Н./Петров В.И./Степович М.А.
Изв. РАН. Сер. физ., Vol: 72, No: 11 , published: 22 October 2008
Photoluminescence spectroscopy of trions in quantum dots: A theoretical description
Juan I. Climente, Andrea Bertoni, and Guido Goldoni
Phys. Rev. B: Condens. Matter, Vol: 78, No: 15 , published: 21 October 2008
Symmetry and optical propeties of wurtzite nanostructures with the c-axis in the layer plane
Tronc P./Vend~1egu~2es P.
Физ. тверд. тела, Vol: 50, No: 10 , published: 21 October 2008
Особенности формирования интенсивных нанокристаллов GaAs на различных поверхностях кремния при молекулярно-пучковой эпитаксии
Самсоненко Ю.Б./Цырлин Г.Э./Егоров В.А./и др.
Физ. и техн. полупроводников , Vol: 42, No: 12 , published: 21 October 2008
Динамика спектров люминесценции кристаллофосфоров ZnS-Cu, ZnS-Ag и атомарном водороде
Хоружий В.Д./Тюрин Ю.И./Стыров В.В./Сивов Ю.А.
Изв. РАН. Сер. физ., Vol: 72, No: 7 , published: 19 October 2008
Фотолюминесценция и ЭПР пористого кремния, сформированного на n+- и p+-монокристаллах, легированных ионной имплантацией бора или фосфора
Демидов Е.С./Рассолова И.С./Горшков О.Н./и др.
Физ. тверд. тела, Vol: 50, No: 8 , published: 19 October 2008
Ионно-стимулированная люменсценция при наличии ионизирующего излучения
Бажин А.И./Гранкин Д.В./Стыров В.В./Тютюнников В.И.
Изв. РАН. Сер. физ., Vol: 72, No: 7 , published: 19 October 2008
Defect-related photoluminescence of hexagonal boron nitride
Luc Museur, Eduard Feldbach, and Andrei Kanaev
Phys. Rev. B: Condens. Matter, Vol: 78, No: 15 , published: 16 October 2008
Enhancing the photoluminescence of InAsP/InP strained multiple quantum wells by H{+} ions implantation
Cao Meng/Wu Hui-Zhen/Lao Yan-Feng/et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 27, No: 4 , published: 16 October 2008
Вплив технологi~:i осаждення та структури плiвок ZnO на ~:iх фото- та катодолюмiнесценцiю
Лашкарьов Г.В./Лазоренко В.Й./Евтушенко А.I./и др.
Укр. фiз. ж., Vol: 53, No: 9 , published: 16 October 2008
Центры сенсибилизированной антистоксовой люминесценции в микрокристаллах твердых растворов Zn[0,6]Cd[0,4]S с адсорбированными молекулами красителя и малоатомными кластерами серебра
Овчинников О.В./Косякова Е.А./Леонова Л.Ю./и др.
Изв. вузов. Физ., Vol: 51, No: 3 , published: 15 October 2008
Широкополосные суперлюменсцентные диоды ближнего ИК диапазона спектра на основе двуслойных квантоворазмерных гетероструктур
Андреева Е.В./Волков Н.А./Костин Ю.О./и др.
Квант. электрон., Vol: 38, No: 8 , published: 15 October 2008
Фотолюминесценция монокристаллов C[60], интекалированных молекулярным водородом
Зиновьев П.В./Зорянский В.Н./Силаева Н.Б.
Физ. низ. температур, Vol: 34, No: 6 , published: 14 October 2008
Влияние атомов бора на свойства квантовых точек InAs в матрице GaAs
Данильцев В.М./Востоков Н.В./Дроздов Ю.Н./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2008, No: 7 , published: 14 October 2008
Influence of piezo-active acoustic vibrations on charge transport and photoluminescence in doped GaAs/AlGaAs structures
Kurylyuk V.V./Polovina O.I./Korotchenkov O.A.
Укр. фiз. ж., Vol: 53, No: 6 , published: 14 October 2008
Low temperature growth and photoluminescence of SnO[2] nanowires
Wang Bing/Xu Ping/Ýang Guowei
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 8 , published: 12 October 2008
A compensation mechanism for semi-insulating 6H-SiC doped with vanadium
Wang Chao/Zhang Yimen/Zhang Yuming/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 2 , published: 12 October 2008
Deep level transient fourier spectroscopy and photoluminescence of vanadium acceptor level in n-type 4H-SiC
Wang Chao/Zhang Yimen/Zhang Yuming/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 2 , published: 12 October 2008
Room temperature bluc-UV electroluminescence from ZnO light-emitting diodes involving Na-doped p-type ZnO and ZnO/ZnMgO multi-quantum wells
Ye Zhizhen/Lin Shisheng/He Haiping/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 8 , published: 12 October 2008
An electroluminescence and emission mechanism for small molecular doped polymer light-emitting diodes
Nie Hai/Tang Xianzhong/Chen Zhu/Wu Lijuan
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 8 , published: 12 October 2008
Bulk single crystal growth and properties of In-doped ZnO
Zhang Fan/Zhao Youwen/Dong Zhiyan/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 8 , published: 12 October 2008
Dynamics of cariiers in ZnSeTe/ZnTe multiple quatum wells
Jin Hua/Liu Shu/Zhang Ligong/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 7 , published: 09 October 2008
MgZnO/ZnO p-n heterojunction fabricated by MOCVD
Dong Xin/Zhao Wang/Zhang Yuantao/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 7 , published: 09 October 2008
MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
Jamil Muhammad/Zhao Hongping/Higgins John B./Tansu Nelson
Phys. Status Solidi A, Vol: 205, No: 12 , published: 09 October 2008
Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy
Litvinov D./Schowalter M./Rosenauer A./et al.
Phys. Status Solidi A, Vol: 205, No: 12 , published: 09 October 2008
Photoconductivity and thermally stimulated current in CaGa[2]S[4] single crystals doped with Eu{2+} and Ce{3+}
Hidaka Chiharu/Hiraguri Kazuma/Takizawa Takeo
Phys. Status Solidi A, Vol: 205, No: 12 , published: 09 October 2008
Hot soap assembly and optical properties of ZnSe quantum dots
Bao Jian/Shen Yue/Hu Gu-Jin/et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 27, No: 6 , published: 09 October 2008
Thermal and nonthermal factors affecting the quantum efficiency of deep-ultraviolet light-emitting diodes
Guo H./Yang Y./Cao X.A.
Phys. Status Solidi A, Vol: 205, No: 12 , published: 09 October 2008
Role of X valley on the dynamics of electron transport through a GaAs/AlAs double-barrier structure
H. V. A. Galeti, H. B. de Carvalho, M. J. S. P. Brasil, Y. Galvão Gobato, V. Lopez-Richard, G. E. Marques, M. Henini, and G. Hill
Phys. Rev. B: Condens. Matter, Vol: 78, No: 16 , published: 08 October 2008
Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems
Tsuchiya, Y.; Yoshiki, M.; Koga, J.; Nishiyama, A.; Koyama, M.; Ogawa, M.; Zaima, S.
IEEE Trans. Electron Devices , Vol: 55, No: 10 , published: 01 October 2008
Carrier multiplication yields in PbS and PbSe nanocrystals measured by transient photoluminescence
Gautham Nair, Scott M. Geyer, Liang-Yi Chang, and Moungi G. Bawendi
Phys. Rev. B: Condens. Matter, Vol: 78, No: 12 , published: 29 September 2008
Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
A. Kaneta, M. Funato, and Y. Kawakami
Phys. Rev. B: Condens. Matter, Vol: 78, No: 12 , published: 16 September 2008
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
Zhong Li/Ma Xiaoyu
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Optical characterization of CuInSe2  thin films grown by metal organic chemical vapor deposition
Ko Cheng-Hao/Chen Chang-Tai/Yang Ming-Der/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Luminescence properties of amorphous carbon films formed using supermagnetron plasma
Sakurai Katsutoshi/Kinoshita Haruhisa/Ohna Genji/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Photoluminescence properties of Eu3+-doped ZnO nanoneedles
Ebisawa Kaysuyuki/Okuno Tsuyoshi/Abe Kohji
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Spectroscopy study on the location and distribution of Eu3+  ions in TiO2  nanoparticles
Tsuboi Taiju/Setiawati Elly/Kawano Katsuyasu
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer
Hsu Shun-Cheng/Wuu Dong-Sing/Zheng Xinhe/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes
Wang Lai/Li Hongtao/Xi Guangyi/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Electroluminescence phenomena in InGaN/GaN multiple quantum well light-emitting diodes with electron tunneling layer
Nee Tzer-Een/Wang Jen-Cheng/Chen Hui-Yui/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Transient electroluminescence in organic light-emitting diode with optical microcavity structure
Takada Noriyuki/Kamata Toshihide
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Efficiency enhancement of top emission organic light-emitting diodes with Ni/Au periodic anode
Huang Jian-Ji/Su Yan-Kuin/Wang Shun-Hsi/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Roll-off characteristics of electroluminescence efficiency of organic blue electrophosphorescence diodes (communication)
Son Kyung Soo/Yahiro Masayuki/Imai Toshiro/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Enhanced hole injection in a hybrid organic-inorganic light-emitting diode (communication)
Morii Katsuyuki/Omoto Masayuki/Ishida Masaya/et al.
Jpn. J. Appl. Phys., Vol: 47, No: 9R , published: 12 September 2008
Получение и фотолюминесценция макропористого кремния p-типа
Рустамов Ф.А./Мамедов М.З./Дарвишов Н.Х./и др.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 29, No: 5 , published: 07 September 2008
Optically detected magnetic resonance in (Zn,Mn)Se/(Zn,Be)Se quantum wells
V. Yu. Ivanov, M. Godlewski, D. R. Yakovlev, M. K. Kneip, M. Bayer, S. M. Ryabchenko, and A. Waag
Phys. Rev. B: Condens. Matter, Vol: 78, No: 8 , published: 28 August 2008
Концентрационное тушение и миграция возбуждений в объемных кристаллах Cd0.5Mn0.5Te
Васильев Н.Н.
Оптика и спектроскопия, Vol: 105, No: 2 , published: 23 August 2008
Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes
Yi Yang; Xian An Cao; Chunhui Yan
IEEE Trans. Electron Devices , Vol: 55, No: 7 , published: 01 July 2008
Линейная поляризация люминесценции в условиях бозе-конденсации диполярных экситонов и спонтанное нарушение симметрии
Горбунов А.В./Тимофеев В.Б.
Письма в ЖЭТФ, Vol: 87, No: 11-12 , published: 27 June 2008
Долгоживущие локализованные магнитные поляроны в сверхрешетках второго типа ZnMnSe/ZnSSe
Максимов А.А./Пашков А.В./Бричкин А.С./и др.
Ж. эксперим. и теор. физ., Vol: 133, No: 6 , published: 09 June 2008
Люминесценция и генерация лазерного излучения в монокристаллах селенида цинка и сульфида кадмия под действием субнаносекундных импульсов высокого напряжения
Месяц Г.А./Насибов А.С./Шпак В.Г./и др.
Ж. эксперим. и теор. физ., Vol: 133, No: 6 , published: 09 June 2008
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
Arif, R.A.; Hongping Zhao; Yik-Khoon Ee; Tansu, N.
IEEE J. Quantum Electron. , Vol: 44, No: 6 , published: 01 June 2008
Preparation of infrared up-conversion material CaS: Eu, Sm
Zhang Xi-Yan\Liu Quan-Sheng\Wang Xiao-Chun\et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 24, No: 4 , published: 27 May 2008
Фотолюминесценция кубического BN, активированного европием или европием и хромом
Шишонок Е.М./Леончик С.В./Стидс Дж.В.
Неорган. матер., Vol: 44, No: 5 , published: 24 May 2008
Излучательные переходы на локализованные состояния Eu в твердом растворе Pb[1_-x]Eu[x]Te
Засавицкий И.И./Мазурин А.В./Селиванов Ю.Г./и др.
Письма в ЖЭТФ, Vol: 87, No: 9-10 , published: 24 May 2008
Матричный элемент межзонных переходов и зависимость порога генерации лазерных структур на основе GaN от температуры
Буров Л.И.\Лебедок Е.В.\Кононенко В.К.\и др.
Ж. прикл. спектроскопии, Vol: 74, No: 6 , published: 23 May 2008
High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots
A. M. Mintairov, Y. Chu, Y. He, S. Blokhin, A. Nadtochy, M. Maximov, V. Tokranov, S. Oktyabrsky, and J. L. Merz
Phys. Rev. B: Condens. Matter, Vol: 77, No: 19 , published: 23 May 2008
Luminescence of GaN single crystals prepared by heating a Ga melt in Na_-N[2] atmosphere
Yamada Takahiro\Yamane Hisanori\Goto Takenari\et al.
Cryst. Res. Technol., Vol: 42, No: 7 , published: 22 May 2008
Optical properties of ZnO:H films grown by atmospheric pressure metal organic chemical vapor depostion (AP-MOCVD)
Li Fan\Wang Li\Dai Jiangnan\et al.
Acta opt. sin=Guangxue xuebao , Vol: 26, No: 10 , published: 22 May 2008
Полупроводниковые лазеры на основе квантовых точек для систем оптической связи
Жуков А.Е./Ковш А.Р.
Квант. электрон., Vol: 38, No: 5 , published: 22 May 2008
Изменение спектра фотолюминесценции вблизи двойниковых границ в кристаллах ZnTe, полученных при быстрой кристаллизации
Багаев В.С./Клевков Ю.В./Кривобок В.С./и др.
Физ. тверд. тела, Vol: 50, No: 5 , published: 20 May 2008
Электрические и оптические свойства композитов на основе производных карбазола и частиц кремния
Алешин А.Н./Александрова Е.Л./Щербаков И.П.
Физ. тверд. тела, Vol: 50, No: 5 , published: 20 May 2008
Y- и Z-люминесценция поликристаллического теллурида кадмия, полученного неравновесной реакцией прямого синтеза компонентов
Ушаков В.В./Клевков Ю.В.
Физ. и техн. полупроводников , Vol: 42, No: 5 , published: 20 May 2008
Инфракрасные спектры пропускания фотолюминесцентных пленок оксидов с Si-, Ge-квантовыми точками, сформированных импульсным лазерным осаждением
Лисовский И.П./Злобин С.А./Каганович Э.Б./и др.
Физ. и техн. полупроводников , Vol: 42, No: 5 , published: 20 May 2008
Усиление фотолюминесценции структур с нанокристаллическим кремнием, стимулированное низкодозовым _g-облучением
Лисовский И.П./Индутный И.З./Муравская М.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 5 , published: 20 May 2008
Особенности пространственного распределения In в эпитаксиальных слоях InGaN, выращенных молекулярно-пучковой эпитаксией с плазменной активацией
Жмерик В.Н./Мизеров А.М./Шубина Т.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 5 , published: 20 May 2008
Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nutride InAsN:Sb for mid-infrared applications
Zhuang Q./Krier A.
IET Optoelectron, Vol: 3, No: 6 , published: 20 May 2008
Электролюминесценция и фототриггерный эффект в монокристаллах твердых растворов GaS[x]Se[1_-x]
Кязым-заде А.Г./Салманов В.М./Мохтари А.Г./и др.
Физ. и техн. полупроводников , Vol: 42, No: 5 , published: 20 May 2008
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
Zhao H.P./Liu G.Y./Li X.-H./et al.
IET Optoelectron, Vol: 3, No: 6 , published: 20 May 2008
Микрофотолюминесценция нелегированного теллурида кадмия, полученного неравновесным методом прямого синтеза в потоке паров компонентов
Ушаков В.В.\Клевков Ю.В.
Физ. и техн. полупроводников , Vol: 41, No: 2 , published: 19 May 2008
Влияние напряженного Si-слоя на фотолюмниесценцию Ge(Si) самоформирующихся островков, выращенных на релаксированных SiGe/Si(001)-буферных слоях
Шалеев М.В.\Новиков А.В.\Яблонский А.Н.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 2 , published: 19 May 2008
Фотолюминесценция германиевых квантовых точек, сформированных импульсным лазерным осаждением
Каганович Э.Б.\Манойлов Э.Г.\Бегун Е.В.
Физ. и техн. полупроводников , Vol: 41, No: 2 , published: 19 May 2008
Люминесценция наностержней оксида цинка
Емельченко Г.А.\Грузинцев А.Н.\Кулаков А.Б.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 2 , published: 19 May 2008
Резонансы в массиве квантовых точек InAs, управляемые внешним электрическим полем
Талалаев В.Г.\Новиков Б.В.\Соколов А.С.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 2 , published: 19 May 2008
Механизм воздействия электрического поля поверхностной акустической волны на кинетику низкотемпературной фотолюминесценции сверхрешеток второго рода GaAs/AlAs
Гуляев Д.В.\Журавлев К.С.
Физ. и техн. полупроводников , Vol: 41, No: 2 , published: 19 May 2008
Люминесцентные исследования кубического нитрида бора, легированного бериллием
Шишонок Е.М.\Taniguchi T.\Sekiguchi T.
Физ. тверд. тела, Vol: 49, No: 10 , published: 19 May 2008
The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots
Moskalenko E.S.\Larsson M.\Karlsson K.F.\et al.
Физ. тверд. тела, Vol: 49, No: 10 , published: 19 May 2008
The influence of annealing atmosphere on the optical properties of flower-like ZnO
Hou Ying\Yang Ming\Pang Cuangsheng\Feng Shouhua
Cryst. Res. Technol., Vol: 42, No: 11 , published: 19 May 2008
Growth and photoluminescence properties of CdS solid solution semiconductor
Chen Fuyi\Jie Wanqi
Cryst. Res. Technol., Vol: 42, No: 11 , published: 19 May 2008
Исследование спектров фотолюминесценции GaMnAs, полученного методом низкотемпературной молекулярно-лучевой эпитаксии
Парчинский П.Б.\Бобылев А.Ю.\Власов С.И.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 10 , published: 19 May 2008
Влияние химической обработки на спектры фотолюминесценции слоев SiO[x] с включениями нанокристаллов Si
Индутный И.З.\Майданчук И.Ю.\Минько В.И.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 10 , published: 19 May 2008
Усиление электролюминесценции кристаллов ZnSe(Te,O) после _g-облучения
Эльмуротова Д.Б.\Ибрагимова Э.М.
Физ. и техн. полупроводников , Vol: 41, No: 10 , published: 19 May 2008
Характеристики туннелирования и ударной ионизации в тонкопленочных электролюминесцентных структурах на основе ZnS:Mn
Гурин Н.Т.\Сабитов О.Ю.\Афанасьев А.М.
Физ. и техн. полупроводников , Vol: 41, No: 10 , published: 19 May 2008
Спектры фотолюминесценции и комбинационного рассеяния света наноструктур SnO[x], легированных ионами самария
Кравец В.Г.
Оптика и спектроскопия, Vol: 103, No: 5 , published: 15 May 2008
Пикосекундная кинетика фотоносителей в арсениде галлия с нанокластерами алюминия
Алешкин В.Я.\Востоков Н.В.\Гапонова Д.М.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 8 , published: 15 May 2008
Фотолюминесценция и состав аморфных пленок As[2]Se[3], модифицированных комплексным соединением Er(thd)[3]
Кудоярова В.Х.\Козюхин С.А.\Цэндин К.Д.\Лебедев В.М.
Физ. и техн. полупроводников , Vol: 41, No: 8 , published: 15 May 2008
Об особенностях модификации дефектной структуры в бинарных полупроводниках под действием микроволнового облучения
Ермолович И.Б.\Миленин Г.В.\Миленин В.В.\и др.
Ж. техн. физ., Vol: 77, No: 9 , published: 15 May 2008
О кривой плотности фононных состояний кубического нитрида бора (по данным фотолюминесцентных исследований)
Шишонок Е.М.\Steeds J.W.
Физ. тверд. тела, Vol: 49, No: 9 , published: 15 May 2008
Рассеяние неравновесных акустических фононов в чистом крупнозернистом ZnSe с микродвойниковой хаотической структурой
Багаев В.С.\Галкина Т.И.\Шарков А.И.\и др.
Физ. тверд. тела, Vol: 49, No: 7 , published: 15 May 2008
Cathodoluminescence studies of C[60] fullerene-based films and nanostructures
Nashchekin A.V.\Baryshev S.V.\Sokolov R.V.\Usov O.A.
Физ. и техн. полупроводников , Vol: 41, No: 8 , published: 15 May 2008
Luminescence and recombination centers in ZnO Si films
Liu Cihui\Yan Ran\Su Jianfeng\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 2 , published: 12 May 2008
Исследование оптических свойств сверхрешеток InAs/InGaAsN/GaAsN с компенсацией напряжений
Мамутин В.В.\Бондаренко О.В.\Васильев А.П.\и др.
Письма в ЖТФ, Vol: 33, No: 9 , published: 12 May 2008
Фотолюминесценция монокристаллов Ga[2]S[3]:Sm{2+}
Георгобиани А.Н./Тагиев Б.Г./Тагиев О.Б./Ганбарова Х.Б.
Неорган. матер., Vol: 44, No: 6 , published: 09 May 2008
Optical properties of the E[0]+_D[0] energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique
Bao Zhi-Hua\Jing Wei-Ping\Luo Xiang-Dong\Tan Ping-Heng
Acta phys. sin., Vol: 56, No: 7 , published: 08 May 2008
Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells
Ding Zhi-Bo\Wang Qi\Wang Kun\et al.
Acta phys. sin., Vol: 56, No: 6 , published: 07 May 2008
Optical property of organic quantum well structures
Song Shu-Fang\Zhao De-Wei\Xu Zheng\Xu Xu-Rong
Acta phys. sin., Vol: 56, No: 6 , published: 07 May 2008
Steady-state and nanosecond time-resolved photoluminescence spectroscopies of aqueous CdTe quantum dots
Wu Wen-Zhi\Yan Yu-Xi\Zheng Zhi-Ren\et al.
Acta phys. sin., Vol: 56, No: 6 , published: 07 May 2008
Spin relaxation dynamics in InAs monolayer and submonolayer
Sun Zheng\Xu Zhong-Ying\Ruan Xue-Xhong\et al.
Acta phys. sin., Vol: 56, No: 6 , published: 07 May 2008
A novel AlGaInP thin-film light emitting diode with omni directional reflector
Zhang Jian-Ming\Zou De-Shu\Liu Si-Nan\et al.
Acta phys. sin., Vol: 56, No: 6 , published: 07 May 2008
Magnetic field effects on organic electroluminescence
Wang Zhen\He Zheng-Hong\Tan Xing-Wen\et al.
Acta phys. sin., Vol: 56, No: 6 , published: 07 May 2008
Ion beam deposition technique for fabricating luminescent thin films from a solution of nanocrystalline semiconductor dots
Kobayashi Satoshi\Tani Yuki\Kawazoe Hiroshi
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 17-19 , published: 04 May 2008
Aharanov—Bohm oscillations in photoluminescence from charged exciton in quantum tubes
Tsumura Kohei\Nomura Shintaro\Mohan Pamela\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 17-19 , published: 04 May 2008
Strong white photoluminescence from carbon-incorporated silicon oxide fabricated by preferential oxidation of silicon in nano-structured Si:C layer
Vasin Andriy V.\Ishikawa Yukari\Shibata Noriyoshi\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 17-19 , published: 04 May 2008
К вопросу о происхождении полосы 1 эВ в фотолюминесценции Cd[1_-x]Zn[x]Te
Седов В.Е.\Матвеев О.А.\Терентьев А.И.\Зеленина Н.К.
Физ. и техн. полупроводников , Vol: 41, No: 9 , published: 04 May 2008
High T0 operation of 1590 nm GaInAsP/InP quantum-wire distributed feedback lasers by Bragg wavelength detuning
Nishimoto Yoshifumi\Yagi Hideki\Miura Koji\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 17-19 , published: 04 May 2008
Characteristics of organic light emitting diodes with tetrakis(ethylmethylamino) hafnium treated indium tin oxide
Sohn Sunyoung\Park Keunhee\Jung Donggeun\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 17-19 , published: 04 May 2008
Электролюминесценция наноструктурированного кремния в матрице анодного оксида алюминия
Лазарук С.К.\Сасинович Д.А.\Кацуба П.С.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 9 , published: 04 May 2008
Спектры электролюминесценции ультрафиолетовых светодиодов на основе p_-n-гетероструктур InGaN/AlGaN/GaN, покрытых люминофорами
Гальчина Н.А.\Коган Л.М.\Сощин Н.П.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 9 , published: 04 May 2008
Exciton annihilation in ZnO ultrafine particles with size of 10—40 nm
Hirai Takeshi\Harada Yoshiyuki\Hashimoto Satoshi\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 20-24 , published: 03 May 2008
Ambipolar Field-Effect Transistor of High Photoluminescent Material Tetraphenylpyrene (TPPy) Single Crystal
Bisri Satria Zulkarnaen\Takahashi Tetsuo\Takenobu Taishi\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 20-24 , published: 03 May 2008
Temperature and excitation intensity tuned photoluminescence in Tl[4]GaIn[3]S[8] layered single crystals
Goksen K./Gasnaly N.M.
Cryst. Res. Technol., Vol: 43, No: 5 , published: 03 May 2008
Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
Yang Hung-Pin D.\Chen I-Liang\Lee Chen-Hong\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 20-24 , published: 03 May 2008
1.1-µm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction
Yashiki Kenichiro\Suzuki Naofumi\Fukatsu Kimiyoshi\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 20-24 , published: 03 May 2008
Simulation of J-aggregate microcavity photoluminescence
Paolo Michetti and Giuseppe C. La Rocca
Phys. Rev. B: Condens. Matter, Vol: 77, No: 19 , published: 01 May 2008
A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes
Sungmin Hwang; Jongin Shim
IEEE Trans. Electron Devices , Vol: 55, No: 5 , published: 01 May 2008
Optical alignment and polarization conversion of the neutral-exciton spin in individual InAs/GaAs quantum dots
K. Kowalik, O. Krebs, A. Lemaître, J. A. Gaj, and P. Voisin
Phys. Rev. B: Condens. Matter, Vol: 77, No: 16 , published: 28 April 2008
Фотолюминесценция структур с квантовыми ямами ZnMnTe в магнитном поле
Кац В.Н./Кочерешко В.П./Агекян В.Ф./и др.
Физ. тверд. тела, Vol: 50, No: 4 , published: 27 April 2008
Особенности оптических и фотоэлектрических свойств специально не легированных и легированных Cu монокристаллов CdS
Давидюк Г.Е./Божко В.В./Мирончук Г.Л./и др.
Физ. и техн. полупроводников , Vol: 42, No: 4 , published: 27 April 2008
Спектры излучения гетероструктур с квантовыми ямами типа InGaN/AlGaN/GaN: модель двумерной комбинированной плотности состояний
Бадгутдинов М.Л./Юнович А.Э.
Физ. и техн. полупроводников , Vol: 42, No: 4 , published: 27 April 2008
Stabilizing light emission of porous silicon by in-situ treatment (brief communication)
Lee Ming-Kwei\Tu Hwai-Fu
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 5A , published: 25 April 2008
Fano effect in a few-electron quantum dot
Otsuka Yomohiro\Abe Eisuke\Katsumoto Shingo\et al.
J. Phys. Soc. Jpn., Vol: 76, No: 8 , published: 25 April 2008
Wavepacket dynamics at low temperature in localized excitons of the quasi-one-dimensional Br-Bridged Pt complex studied by femtosecond luminescence spectroscopy
Suemoto Tohru\Kurita Susumu
J. Phys. Soc. Jpn., Vol: 76, No: 8 , published: 25 April 2008
Strain-controlled selective-area growth of InGaAsP films on InP
Song Jung Ho\Kim Kisoo\Leem Ahn\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 33-35 , published: 25 April 2008
Enhancement of room temperature photoluminescence from InAs quantum dots by irradiating Mn
Nagahara Seiji\Shimoda Masahiko\Tsukamoto Shiro\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 33-35 , published: 25 April 2008
Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice
Kurokawa Yasuyoshi\Tomita Shigeki\Miyajima Shinsuke\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 33-35 , published: 25 April 2008
Intense green luminescence from Eu2+-doped ZnO microstructures
Sugimoto Hideo\Ebisawa Katsuyuki\Okuno Tsuysohi
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 33-35 , published: 25 April 2008
On the origin of the unexpected annealing behavior of GaInNAs quantum wells
Dworzak Matthias\Hildebrant Radowan\Hoffmann Axel\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 25-28 , published: 25 April 2008
Квантовые биения состояний тонкой структуры в квантовых точках InP
Герловин И.Я./Игнатьев И.В./Югова И.А./Masumoto Y.
Оптика и спектроскопия, Vol: 104, No: 4 , published: 25 April 2008
Electrolumnescence of In[0.53]Ga[0.47]As[0.99]N[0.01]/GaAs[0.5]Sb[0.5] type-~I~I quantum well light-emitting diodes grown on InP substrates by molecular beam epitaxy (brief communication)
Kawamura Yuichi\Inoue Naohisa
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 6A , published: 25 April 2008
High-current injection and transport on order of kA/cm2  in organic light-emitting diodes having mixed organic/organic heterojunction interfaces
Matsushima Toshinori\Adachi Chihaya
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 33-35 , published: 25 April 2008
Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents
Masui Hisashi\Sato Hitoshi\Asamizu Hirokuni\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 25-28 , published: 25 April 2008
Элктролюминесценция p_-i_-n-структур на основе ZnO, изготовленных методом ультразвукового распыления
Хабибуллаев П.К.\Юлдашев Ш.У.\Нусретов Р.А.\Хван И.В.
Докл. РАН, Vol: 414, No: 4 , published: 25 April 2008
Growth and luminescence properties of subsequently grown AlInN layers on AlN homoepitaxial layers by ammonia gas source molecular beam peitaxy (brief communication)
Iwata Shiro\Nanjo Yoshiyuki\Okuno Toshihiro\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 6A , published: 25 April 2008
Intense monochromatic light emission from multiple nanoscale twin boundaries in indirect-gap AlGaAs epilayers
Ohno Yutaka\Yamamoto Naoki\Shoda Kaoru\Takeda Seiji
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 33-35 , published: 25 April 2008
Люминесцентные свойства эпитаксиальных слоев и гетероструктур на основе GaN, выращенных на подложках пористого SiC
Мынбаев К.Д.\Мынбаева М.Г.\Зубрилов А.С.\Середова Н.В.
Письма в ЖТФ, Vol: 33, No: 2 , published: 24 April 2008
Оптические и фотоэлектрические свойства слоистых монокристаллов GaS:Er{3+}, облученных _g-квантами
Мадатов Р.С./Тагиев Т.Б./Абушев С.А./и др.
Неорган. матер., Vol: 44, No: 4 , published: 24 April 2008
On the evolution of carrier distribution and wavelength switching in asymmetric multiple quantum-well lasers
Wang Huiling\Bruce Douglas M.\Cassidy Daniel T.
IEEE J. Quantum Electron. , Vol: 43, No: 3 , published: 24 April 2008
Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111)
O. Moshe, D. H. Rich, B. Damilano, and J. Massies
Phys. Rev. B: Condens. Matter, Vol: 77, No: 15 , published: 23 April 2008
Characterization of ZnSe nanocrystals grown by vapor phase epitaxy
Tishchenko V.V.Kovalenko A.V.
Физ. низ. температур, Vol: 32, No: 12 , published: 21 April 2008
Спектры комбинационного рассеяния света и фотолюминесценции кристаллических и стеклообразных твердых растворов GeS[2x]Se[2_-2x]
Блецкан Д.И.\Грига Э.М.\Кабаций В.Н.
Неорган. матер., Vol: 43, No: 2 , published: 21 April 2008
Исследования пористого InP методами рентгеновской дифракции, ИК-спектроскопии, УМРЭС, XANES и ФД
Домашевская Э.П./Кашкаров В.М./Середин П.В./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 4 , published: 20 April 2008
Структура, фазовый состав и оптические свойства нанопорошков кремния
Терехов В.А./Кашкаров В.М./Турищев С.Ю./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 4 , published: 20 April 2008
Light emission from porous silicon photoetched in aqueous alkali salt solutions
Adachi Sadao\Miyazaki Takayuki\Inoue Kazufumi\Sodezawa Shingo
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 7А , published: 18 April 2008
Investigation on photoluminescence blue shift of InGaN/GaN quantum wells induced by surface band bending
Wang Yang\Pei Xiaojiang\Xing Zhigang\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 7А , published: 18 April 2008
Time-resolved luminescence of TiO[2] powders with different crystal structures (brief communication)
Harada Naomi\Goto Masako\Iijima Koji\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 7А , published: 18 April 2008
High-performance top-emitting white organic light-emitting devices
Zhu Xiuling\Sun Jiaxin\Yu Xiaoming\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 7А , published: 18 April 2008
Anisotropic optical emission of single CdSe/CdS tetrapod heterostructures: Evidence for a wavefunction symmetry breaking
C. Mauser, T. Limmer, E. Da Como, K. Becker, A. L. Rogach, J. Feldmann, and D. V. Talapin
Phys. Rev. B: Condens. Matter, Vol: 77, No: 15 , published: 15 April 2008
Photoluminescence study on defects in multicrystalline silicon
Arguirov T.\Seifert W.\Jia G.\Kittler M.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Гигантские флуктуации интенсивности излучения двумерных электронов в режиме квантового эффекта Холла
Парахонский А.Л.\Лебедев М.В.\Кукушкин И.В.\и др.
Физ. тверд. тела, Vol: 49, No: 5 , published: 11 April 2008
Формирование и некоторые свойства гетеропереходов ZnO/A{~I~I~I}N
Атаев Б.М.\Мамедов В.В.\Махмудов С.Ш.\и др.
Изв. РАН. Сер. физ., Vol: 71, No: 5 , published: 11 April 2008
Structural peculiarities of 4H-SiC irradiated by Bi ions
Kalinina E.V.\Skuratov V.A.\Sitnikova A.A.\et al.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates
Kolesnikova E.\Mynbaeva M.\Sitnikova A.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO
Jia G.\Arguirov T.\Kittler M.\et al.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Combined CLEBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding
Yu X.\Vyvenko O.\Kittler M.\et al.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Cathodoluminescence study of silicon oxide/silicon interface
Zamoryanskaya M.V.\Sokolov V.I.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging
Khrustalev V.S.\Bobyl A.V.\Konnikov S.G.\et al.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Cathodoluminescence of laser A{~I~I}B{~V~I}
Ivanov A.S.\Vasilev V.I.\Sedova I.V.\et al.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Evolution of luminescence properties of natural oxide on silicon and porous silicon
Sokolov R.V.\Zamoryanskaya M.V.\Kolesnikova E.V.\Sokolov V.I.
Физ. и техн. полупроводников , Vol: 41, No: 4 , published: 11 April 2008
Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure
Chang Yan-Ling\Zhang Qi-Feng\San Hui\Wu Jin-Lei
Acta phys. sin., Vol: 56, No: 4 , published: 10 April 2008
The semiconductor diode as a rectifier, a light source, and a solar cell: a simple explanation
Herrmann F.\W~:urfel P.
Am. J. Phys , Vol: 74, No: 7 , published: 10 April 2008
Surface chemistry of semiconductor nanocrystals
Mews Alf
Z. phys. Chem., Vol: 221, No: 3 , published: 05 April 2008
Synthesis and assembling of semiconductor and metal nanocrystals
Gaponik N.\Shavel A.\Lu L.\Eychm~:uller A.
Z. phys. Chem., Vol: 221, No: 3 , published: 05 April 2008
Electro-assisted photo-luminescence of colloidal germanium nanoparticles
Fojtik Anton\Muschik Thomas\Walther Thomas\Giersig Michael
Z. phys. Chem., Vol: 221, No: 3 , published: 05 April 2008
Cobalt-doped ZnO nanorods fabricated by a simple wet chemical route in alcoholic solution
B~:usgen Thomas\Hilgendorff Michael\Giersig Michael
Z. phys. Chem., Vol: 221, No: 3 , published: 05 April 2008
Оптически активные центры в гетероструктурах Si/Si1-xGeX

:Er, связанные с ионами Er3+
Красильникова Л.В./Степихова М.В./Байдакова Н.А./и др.
Физ. и техн. полупроводников , Vol: 43, No: 7 , published: 05 April 2008
Liminescence characteristics of a blue-green emission thin film electroluminescence device based on a ZnSe emitting layer
Jiang Weiwei/Zhao Suling/Zhang Fujun/Xu Zheng
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 4 , published: 02 April 2008
Electrically confined aperture formed by ion implantation and its effect on device optoelectronic characteristics
Liu Cheng/Cao Chunfang/Lao Yanfeng/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 4 , published: 02 April 2008
Photoluminescence of InGaN/AlGaN strained multiple quantum wells influenced by dry etching
Cao Meng\Wu Huizhen\Lao Yanfeng\et al.
Acta opt. sin=Guangxue xuebao , Vol: 27, No: 3 , published: 01 April 2008
Preparation and characterization of chemically deposited (Cd[0.7]_-Zn[0.3])S:CdCl[2],Gd nanocrystalline films
Shrivastava S.\Verma B.
Cryst. Res. Technol., Vol: 42, No: 5 , published: 01 April 2008
Примесный пробой и люминесценция терагерцового диапазона в электрическом поле в микроструктурах p-GaAs и p-GaAsN
Воробьев Л.Е.\Фирсов Д.А.\Шалыгин В.А.\и др.
Письма в ЖТФ, Vol: 32, No: 9 , published: 01 April 2008
Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film
Rong-Hwei Yeh; Tai-Rong Yu; Te-Cheng Chung; Shih-Yung Lo; Jyh-Wong Hong
IEEE Trans. Electron Devices , Vol: 55, No: 4 , published: 01 April 2008
Природа краевой люминесценции диффузионных слоев ZnSe:Sn
Гривул В.И.\Махний В.П.\Слетов М.М.
Физ. и техн. полупроводников , Vol: 41, No: 7 , published: 31 March 2008
Молекулярное состояние A{+}-центров в квантовых ямах GaAs/AlGaAs
Петров П.В.\Иванов Ю.Л.\Жуков А.Е.
Физ. и техн. полупроводников , Vol: 41, No: 7 , published: 31 March 2008
Light emission form silicon: some perspectives and applications
Fiory A.T.\Ravindra N.M.
J. Electron. Mater., Vol: 32, No: 10 , published: 31 March 2008
UV, violet and blue-green luminescence from RF sputter deposited ZnO:Al thin films
Prabakar K.\Kim Choongmo\Lee Chongmu
Cryst. Res. Technol., Vol: 40, No: 12 , published: 31 March 2008
Особенности электролюминесценции эрбия в неупорядоченных полупроводниках, обусловленные различием заряда локализованных состояний
Шмелькин А.Б.\Цэндин К.Д.
Физ. и техн. полупроводников , Vol: 41, No: 7 , published: 31 March 2008
Высокоэффективные светодиоды на основе тиристорной гетероструктуры ~I~I типа n-GaSb/p-GaSb/n-GaInAsSb/p-AlGaAsSb
Стоянов Н.Д.\Журтанов Б.Е.\Именков А.Н.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 7 , published: 31 March 2008
Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method
Kotlyarchuk B.\Savchuk V.\Oszwaldowski M.
Cryst. Res. Technol., Vol: 40, No: 12 , published: 31 March 2008
Large area lateral overgrowth of mismatched InGaP on GaAs(111)B substrates
Uematsu S.\Nomoto M.\Nakayama S.\Takahashi N.S.
Cryst. Res. Technol., Vol: 40, No: 12 , published: 31 March 2008
Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements
Flavian Stokker Cheregi, Anna Vinattieri, Eric Feltin, Dobri Simeonov, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean, and Massimo Gurioli
Phys. Rev. B: Condens. Matter, Vol: 77, No: 12 , published: 28 March 2008
Экситонная и внутрицентровая излучательная рекомбинация в квантовых ямах ZnMnTe и CdMnTe с оптически активными ионами марганца
Агекян В.Ф.\Akai I.\Васильев Н.Н.\и др.
Физ. тверд. тела, Vol: 49, No: 6 , published: 27 March 2008
Численное моделирование температурной зависимости спектров фотолюминесценции квантовых точек InAs/GaAs
Смирнов М.Б.\Талалаев В.Г.\Новиков Б.В.\и др.
Физ. тверд. тела, Vol: 49, No: 6 , published: 27 March 2008
Влияние температуры на миграционно-ускоренное тушение фосфоресценции нафталина в стеклообразном толуоле
Куликова О.И.\Дерябин М.И.\Гаджиалиева И.В.
Физ. тверд. тела, Vol: 49, No: 6 , published: 27 March 2008
Effects of in situ annealing on optical and structural properties of GaN eilayers grown by HVPE
Duan Chenghong/Qiu Kai.Li Xinhua/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 3 , published: 27 March 2008
Effect of hydrogenation on luminescence properties of ZnO crystals
Zhang Yuantao/Ma Yan/Zhang Baolin/Du Guotong
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 3 , published: 27 March 2008
Influence of threading dislocation on the luminescence efficiency of GaN heteroepitaxial layers
Gao Zhiyuan/Hao Yue/Li Peixian/Zhang Jincheng
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 3 , published: 27 March 2008
Stacking fault related 3.31-eV luminescence at 130-meV acceptors in zinc oxide
M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C. E. Krill, K. Thonke, and R. Sauer
Phys. Rev. B: Condens. Matter, Vol: 77, No: 12 , published: 26 March 2008
Влияние примеси йода на релаксацию фотовозбужденного хлорида серебра
Вострикова Ю.В./Клюев В.Г.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Влияние ультразвуковой обработки на фотоэлектрические и люминесцентные свойства кристаллов ZnSe
Зобов Е.М./Зобов М.Е./Габибов Ф.С./и др.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Сравнительный анализ фото- и электролюминесценции многослойных структур с самоформирующимися островками Ge(Si)/Si(001)
Дроздов Ю.Н./Красильник З.Ф./Кудрявцев К.Е./и др.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Роль процессов переноса неравновесных носителей заряда в излучательных свойствах массивов InAs/GaAs-квантовых точек
Школьников А.С./Савельев А.В./Карачинский Л.Я./и др.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Фотолюминесценция с длиной волны до 1.6 мкм в кватовых точках с увеличенной эффективной толщиной слоя InAs
Дроздов М.Н./Востоков Н.В./Данильцев В.М./и др.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Фотолюминесценция полупроводниковых структур на основе бутилзамещенных фталоцианинов эрбия
Белогорохов И.А./Рябчиков Ю.В./Тихонов Е.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Кремниевые светодиоды с большой мощностью излучения краевой люминесценции
Емельянов А.М./Соболев Н.А.
Физ. и техн. полупроводников , Vol: 42, No: 3 , published: 24 March 2008
Free standing GaN layers with GaN nanorod buffer layer
Lee H.J.\Lee S.W.\Goto H.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi-layered structures
Usikov Alexander\Shapovalova Lisa\Kovalenkov Oleg\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Metal catalyst enhanced growth of high quality and density GaN dots on Si(111) by implant source growth
Buckmaster Ryan\Goto Takenari\Hanada Takashi\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer
Hu F.R.\Ochi K.\Zhao Y.\Hane K.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Evidence of quantum dot-like nano-objects in InGaN quantum wells provided by narrow photoluminescence spectra from localized exciton
Gotoh H.\Akasaka T.\Tawara T.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Stimulated emission from free-standing GaN/Si micro-disk structures
Choi H.W.\Hui K.N.\Lai P.T.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Lateral diffusion of photogenerated carriers in InGaN/GaN heterostructures observed by PL measurements
Vierheilig C.\Braun H.\Schwarz U.T.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy
Kitamura T.\Nakashima S.\Mitani T.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
InAsN quantum dots grown on GaAs(001) substrates by MOVPE
Kuboya S.\Thieu Q.T.\Nakajima F.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Two-step growth of InGaN quantum dots and application to light emitters
Yamaguchi T.\Dennemarck J.\Tessarek C.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Alloy composition fluctuation and band edge energy structure of In-rich In[x]Ga[1_-x]N layers investigated by systematic spectroscopy
Ishitani Yoshihiro\Fujiwara Masayuki\Shinada Takuro\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
Soh C.B.\Hartono H.\Chen P.\Chua S.J.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE
Nakamura Teruyuki\Endo Yuta\Katayama Ryuji\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy
Shen C.-H.\Chen H.-Y.\Lin H.-W.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD
Iwami Masayuki\Kato Sadahiro\Satoh Yoshihiro\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates
Cordier Yvon\Chenot S~1ebastien\La~:ugt Marguerite\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Photoluminescence study of isoelectronic graps in dilute GaAsN alloys
Yaguchi H.\Aoki T.\Morioke T.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Improvement of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes
Wu Gwo-Mei\Chung Ta-Jen\Nee Tzer-En\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Micro-analysis of light emission properties of GaN-based laser diodes
Godlewski M.\Bo~.zek R.\Miasojedovas S.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111)Si substrate
Kim Eunhee\Narita Tetsuo\Honda Yoshio\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Антистоксова люминесценция твердых растворов Zn[0.6]Cd[0.4]S с адсорбцированными молекулами органических красителей и малоатомными кластерами серебра
Овчинников О.В.\Косякова Е.А.\Смирнов М.С.\и др.
Ж. прикл. спектроскопии, Vol: 74, No: 5 , published: 21 March 2008
Цветовые возможности люминофоров ZnS:(CuCl,Ga) в зависимости от очередности легирования CuCl и галлием
Бачериков Ю.Ю.\Кицюк Н.В.
Физ. и техн. полупроводников , Vol: 41, No: 6 , published: 21 March 2008
Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE
Jang K.S.\Kim K.H.\Hwang S.L.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence
Feng Shih-Wei\Pan C.C.\Chyi Jen-Inn\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-P~1erot filters
Cho E.\Pavidis D.\Sillero E.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes
Inada T.\Satake A.\Fujiwara K.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Temperature dependence of the quantum efficiency in green light emitting diode dies
Li Y.\Zhao W.\Xia Y.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodes
Lee Sung-Nam\Ryu H.Y.\Paek H.S.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Investigation of local tunneling phenomena in green InGaN-based LEDs
Onushkin Grigory\Lee Jinhyun\Yang Jung-Ja\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Electroluminescence uniformity in green LEDs and dual color blue/green stacking LEDs
Onushkin Grigory\Lee Jinhyun\Yang Jung-Ja\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Investigations of the growth conditions for GaN-bulk crystals grown by the suplimation technique
Rost H.-J.\Siche D.\M~:uller R.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Sytnhesis of ~I~I~I-nitride microcrystals using metal-EDTA complexes
Liu Y.H.\Koide S.\Miyake H.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Dependence of In mole fraction in InGaN on GaN facets
Nakao K.\Li D.B.\Liu Y.H.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE
Li Da-Bing\Katsuno Takuya\Aoki Masakazu\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Mg-doped high-quality Al[x]Ga[1_-x]N (x=0_-1) grown by high-temperature metal-organic vapor phase epitaxy
Imura M.\Kato N.\Okada N.\et al.
Phys. Status Solidi C, Vol: 4, No: 7 , published: 21 March 2008
Получение гетероструктур InP/InGaAs/InP методом жидкофазной эпитаксии и раздельное приготовление растворов-расплавов
Васильев М.Г.\Васильев А.М.\Вилк Д.М.\Шелякин А.А.
Неорган. матер., Vol: 43, No: 7 , published: 20 March 2008
Получение p_-n-перехода в ZnO путем ионной имплантации мышьяка и последующего отжига по методу радикало-лучевой геттерирующей эпитаксии
Роголин И.В.\Георгобиани А.Н.\Котляревский М.Б.
Неорган. матер., Vol: 43, No: 7 , published: 20 March 2008
Нестехиометрические дефекты в Si-легированных эпитаксиальных слоях GaAs, выращенных на подложках с ориентациями (111)A и (111)B
Яременко Н.Г./Галиев Г.Б./Карачевцева М.В./и др.
Докл. РАН, Vol: 419, No: 4 , published: 19 March 2008
Временная зависимость сигнала антипересечения уровней в экситонном излучении кристалла GaSe в условиях резонансного возбуждения
Старухин А.Н./Нельсон Д.К./Разбирин Б.С.
Письма в ЖЭТФ, Vol: 87, No: 5-6 , published: 17 March 2008
Charge storage, photoluminescence, and cluster statistics in ensembles of Si quantum dots
I. V. Antonova, M. Gulyaev, E. Savir, J. Jedrzejewski, and I. Balberg
Phys. Rev. B: Condens. Matter, Vol: 77, No: 12 , published: 14 March 2008
Optical characterization of structure for semiconductor quantum dots
Weidong Sheng and S. J. Xu
Phys. Rev. B: Condens. Matter, Vol: 77, No: 11 , published: 12 March 2008
High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon
A. Yang, M. Steger, H. J. Lian, M. L. W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, III, S. A. Lyon, M. Konuma, and M. Cardona
Phys. Rev. B: Condens. Matter, Vol: 77, No: 11 , published: 10 March 2008
Optical and structural studies of SHI irradiated SiO[2] coated ~I~V-~V~I semiconductor quantum dots
Chowdhury S./Choudhury A.
Indian J. Phys., Vol: 82, No: 3 , published: 09 March 2008
Synthesis and characterizations of quality PbS quantum dots in SBR matrix
Dutta N./Mohanta D./Coudhury A.
Indian J. Phys., Vol: 82, No: 3 , published: 09 March 2008
Carrier dynamics in individual concentric quantum rings: Photoluminescence measurements
S. Sanguinetti, M. Abbarchi, A. Vinattieri, M. Zamfirescu, M. Gurioli, T. Mano, T. Kuroda, and N. Koguchi
Phys. Rev. B: Condens. Matter, Vol: 77, No: 12 , published: 07 March 2008
MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics
Tourni~1e Eric\Trampert Achim
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Development of GaInNAsSb alloys: growth, band structure, optical properties and applications
Harris James S., Jr.\Kudrawiec R.\Yuen H.B.\et al.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
Kunert B.\Volz K.\Stolz W.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy
Wang J.-B.\Ding D.\Johnson S.R.\et al.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Today's challenges in quantum dot materials research for tomorrow's quantum functional devices
N~:otzel Richard\Anantathanasarn Sanguan\Zhou Dayong\Van Lippen Twan
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Microcavity modified spontaneous emission of single quantum dots
Solomon G.S.\Pelton M.\Yamamoto Y.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Relaxation and recombination in InAs quantum dots
Dawson P.\G~:obel E.O.\Pierz K.\et al.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Optical analysis of dislocation-related physical processes in GaN-based epilayers
Jiang De-Sheng\Zhao De-Gang\Yang Hui
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells
Fujiwara K.\Satake A.\Schrottke L.\et al.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Spin lifetime of (In, Ga)As/GaAs(110) quantum wells
Schreiber L.\Duda D.\Beschoten B.\et al.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Morphology and photoluminescence of anodized aluminium-coated 6H-SiC samples
Keffous A.\Bourenane K.\Gabouze N.\et al.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Composite structure of porous silicon and polyaniline for optoelectronic applications
Urbach B.\Korbakov N.\Bar-david Y.\et al.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Chemical sensing by simultaneous measurement of photoluminescence intensity and photoluminescence decay time of porous silicon
Dian J.\Vrkoslav V.\Jel~1inek I.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Role of hydrogen in the photoinduced evolution of porous silicon luminescence
Koropecki R.R.\Arce R.\Spies C.\et al.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Luminescence from porous layers produced by Ag-assisted electroles etching
Hadjiersi T.\Gabouze N.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Photoluminescence from porous layers formed on phosphorus-implanted silicon by Ag-assisted chemical etching
Gabouze N.\Hadjersi T.\Guerbous L.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Light-emission characteristics of silicon nanocrystals formed by anodization of bulk crystalline silicon in the transition regime
Gardelis S.\Nassiopoulou A.G.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
The growth of high quality GaMnAs layers and heterostructures by molecular beam epitaxy
Campion R.P.\Grant V.A.\Edmonds K.W.\et al.
Phys. Status Solidi B, Vol: 244, No: 8 , published: 03 March 2008
Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing
Gelloz B.\Shibata T.\Koshida N.
Phys. Status Solidi C, Vol: 4, No: 6 , published: 03 March 2008
Acoustic emission on the relaxation of local thermomechanical stresses in the process of degradation of light-emitting heterostructures on the basis of InGaN and GaAsP
Veleshchuk V.P./Vlasenko I.I./Lyashenko O.V./et al.
Укр. фiз. ж., Vol: 53, No: 3 , published: 02 March 2008
Structural and photoluminescence properties for SnO[2]:Sb films prepared on Al[2]O[3] substrate
Feng Xian-Jin\Ma Jin\Ge Song-Hua\et al.
Acta phys. sin., Vol: 56, No: 8 , published: 01 March 2008
Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
Zielenski M.\Ndiaye S.\Chassagne T.\et al.
Phys. Status Solidi A, Vol: 204, No: 4 , published: 01 March 2008
Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma
Gladkov P.
Phys. Status Solidi A, Vol: 204, No: 4 , published: 01 March 2008
GaInPSb/GaSb heterostructures for mid-infrared light emitting diodes
Smirnov V.M.\Batty P.J.\Jones R.\et al.
Phys. Status Solidi A, Vol: 204, No: 4 , published: 01 March 2008
Mn{2+} and band exciton luminescence in ZnMnTe/ZnMgTe quantum well structures
Agekyan V.F.\Akai I.\Filosofov N.G.\et al.
Phys. Status Solidi B, Vol: 244, No: 9 , published: 01 March 2008
Evidence of intrinsic silicon nanostructure formation in SiN matrix deposited by various low temperature CVC techniques
Leli~2evre J.-F.\Rodriguez H.\Fourmond E.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Study of Te diffused into GaSb by photoluminescence and HRXRD
Vargas-Sanabria R.\Rosendo E.\Martinez J.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Approach to reduce the residual strain in bulk InGaAs crystals grown by the multi-component zone melting method
Rahman M.S.\Islam M.R.\Alam M.S.\Yamada M.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers
Gregu~3sov~1a D.\Ku~3cera M.\Hasen~:ohri S.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Doping effect on the optical properties of ZnO nanostructures
Stoehr M.\Juillaguet S.\Kyaw T.M.\Wen J.G.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Ce and Yb doped InP layers for radiation detection
Zavadil J.\Prochazkova O.\Zdansky K.\Gladkov P.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Structural evolution of nanocrystalline silicon studied by high resolution transmission electron microscopy
Ponce A.\Benami A.\Santana G.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Characterization of corrugated MQW heterostructure prepared on patterned (001) GaAs substrate by MOVPE
~3Strichovanec P.\K~1udela R.\V~1avra I.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Photoluminescence and TEM characterization of (Al[y]Ga[1_-y])[1_-x]In[x]P layers grown on graded buffers
Novak J.\Hasen~:ohri S.\Ku~3cera M.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC
Juillaguet S.\Albrecht M.\Lewandowska R.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Structural and optical characterization of pure ZnO films synthesised by thermal annealing on GaSb single crystals
Mart~1inez O.\Plaza J.L.\Mass J.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Synthesis of PbI[2] with admixture of rare earth elements: electrical and optical properties
Matuchova M.\Zdansky K.\Zavadil J.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Electro-optical characterisation for the control of silicon nanocrystals embedded in SiN[x]:H films
Leli~2evre J.-F.\Rodriguez H.\Fourmond E.\et al.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler M.\Kunzer M.\Schmidt R.\et al.
Phys. Status Solidi A, Vol: 204, No: 4 , published: 01 March 2008
Evolution of the cathodoluminescence spectral shape and intensity of GaN quantum dots under 10 keV electron beam irradiation
Sieber B.
Phys. Status Solidi C, Vol: 4, No: 4 , published: 01 March 2008
Мощные кремниевые светодиоды с краевой люминесценцией
Емельянов А.М./Соболев Н.А.
Письма в ЖТФ, Vol: 34, No: 4 , published: 27 February 2008
Optical properties of free-standing GaAs semiconductor nanowires and their dependence on the growth direction
P. Redliński and F. M. Peeters
Phys. Rev. B: Condens. Matter, Vol: 77, No: 7 , published: 26 February 2008
Energy transfer in close-packed PbS nanocrystal films
V. Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T. Warming, A. Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, and F. Schaffler
Phys. Rev. B: Condens. Matter, Vol: 77, No: 8 , published: 26 February 2008
Наноразмерные гетероструктуры ZnCdS/ZnSSe для полупроводниковых лазеров
Козловский В.И./Санников Д.А./Свиридов Д.Е.
Кpатк. сообщ. по физ. ФИAН, Vol: 2008, No: 2 , published: 24 February 2008
Бозе-конденсация двумерных дипольных экситонов: моделирование квантовым методом Монте-Карло
Лозовик Ю.Е./Курбаков И.Л./Астрахарчик Г.Е./Вилландер М.
Ж. эксперим. и теор. физ., Vol: 133, No: 2 , published: 23 February 2008
Фото- и термолюминесценция кристаллов BaGa[2]S[4]:Eu{2+} и BaGa[2]S[4]:Eu{2+}, Ce{3+}
Георгобиани А.Н./Тагиев Б.Г./Абушов С.А./и др.
Неорган. матер., Vol: 44, No: 2 , published: 21 February 2008
Эмиссия излучения терагерцевого диапазона из гетероструктур GaAsN/GaAs в электрическом поле
Воробьев Л.Е./Фирсов Д.А./Шалыгин В.А./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 2 , published: 16 February 2008
Спектроскопия поляризованной люминесценции наноструктур
Аверкиев Н.С./Кудинов А.В./Намозов Б.Р./Кусраев Ю.Г.
Изв. РАН. Сер. физ., Vol: 72, No: 2 , published: 16 February 2008
Люминесцентные и электрофизические свойства диодных гетероструктур Si/SiGe:Er/Si
Спиваков А.Г./Красильникова Л.В./Степихова М.В./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 2 , published: 16 February 2008
Морфология и фотолюминесценция самоформирующихся нанокластеров GeSi/Si, выращенных методом сублимационной молекулярно-лучевой эпитаксии в среде германа
Филатов Д.О./Круглова М.В./Исаков М.А./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 2 , published: 16 February 2008
Электрофизические свойства слоев Si:Er/Si, выращенных методом сублимационной молекулярно-лучевой эпитаксии
Белова О.В./Шабанов В.Н./Касаткин А.П./и др.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Пространственное распределение дефектов и кинетика неравновесных носителей заряда в вюрцитных кристаллах GaN, легированных Sm, Eu, Er, Tm и дополнительно введенной примесью Zn
Мездрогина М.М./Криволапчук В.В./Кожанова Ю.В.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Стимулированное излучение гетероструктур на основе Cd[x]He[1_-x]Te при комнатной температуре в условиях оптической накачки
Андронов А.А./Ноздрин Ю.НЮ/Окомельков А.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Действие мощных нано- и фемтосекундных лазерных импульсов на кремниевые наноструктуры
Качурин Г.А./Черкова С.Г./Володин В.А./и др.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Фотолюминесценция локализованных экситонов в квантовых точках InGaN
Усов С.О./Цапульников А.Ф./Лундин В.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Оптические парметры диодных лазеров на основе InAsSb/InAsSbP-гетероструктуры
Астахова А.П./Безъязычная Т.В./Буров Л.И./и др.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Люминесценция кристалла ZnO:Ga при возбуждении в вакуумной ультрафиолетовой области
Родный П.А./Стрыганюк Г.Б./Ходюк И.В.
Оптика и спектроскопия, Vol: 104, No: 2 , published: 16 February 2008
Исследование эффектов спиновой инжекции носителей заряда из ферромагнитного контакта Шоттки Ni(Co)/GaAs в гетероструктурах с квантовой ямой
Дорохин М.В./Зайцев С.В./Байдусь Н.В./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 2 , published: 16 February 2008
Поглощение и эмиссия излучения терагерцевого диапазона в легированных квантовых ямах GaAs/AlGaAs
Фирсов Д.А./Воробьев Л.Е./Шалыгин В.А./и др.
Изв. РАН. Сер. физ., Vol: 72, No: 2 , published: 16 February 2008
Роль фоновых примесей O и Cu в оптике кристаллов ZnSe с позиций теории непересекающихся зон
Морозова Н.К./Мидерос Д.А./Гаврищук Е.М./Галстян В.Г.
Физ. и техн. полупроводников , Vol: 42, No: 2 , published: 16 February 2008
Влияние корреляции в распределении примесных дефектов на микромеханические свойства монокристаллов GaAs:Te
Богданова В.А./Давлеткильдеев Н.А./Нукенов М.М./Семиколенова Н.А.
Физ. тверд. тела, Vol: 50, No: 2 , published: 15 February 2008
Люминесценция CdMgTe с ультратонкими нанослоями CdMnTe
Агекян В.Ф./Пономарева И.А./Серов А.Ю./и др.
Физ. тверд. тела, Vol: 50, No: 2 , published: 15 February 2008
Отрицательно заряженные экситоны в полумагнитных квантовых точках CdSe/ZnSe/ZnMnSe
Бричкин А.С.\Черненко А.В.\Чехович Е.А.\и др.
Ж. эксперим. и теор. физ., Vol: 132, No: 2 , published: 11 February 2008
Фотолюминесценция в области длин волн 1.5_-1.8 _mm пленок HgCdTe, полученных молекулярно-пучковой эпитаксией
Иванов-Омский В.И.\Баженов Н.Л.\Мынбаев К.Д.\и др.
Письма в ЖТФ, Vol: 33, No: 11 , published: 11 February 2008
Emission properties of structured carbon films
Evtukh A.A./Klyui N.I./Krushinskaya L.A./et al.
Укр. фiз. ж., Vol: 53, No: 2 , published: 11 February 2008
Аномальное спиновое расщепление электронов в InAs в условиях инжекционной накачки
Терентьев Я.В.\Люблинская О.Г.\Торопов А.А.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 5 , published: 10 February 2008
Кинетика люминесценции диполярных экситонов в кольцевых ловушках
Горбунов А.В.\Ларионов А.В.\Тимофеев В.Б.
Письма в ЖЭТФ, Vol: 86, No: 1-2 , published: 10 February 2008
Белая электролюминесценция структуры ZnO/GaN
Титков И.Е.\Зубрилов А.С.\Делимова Л.А.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 5 , published: 10 February 2008
Influence of neutron irradiation on reverse currents in gallium-phosphide light-emitting diodes
Dubovyj V.\Kochkin V.\Opylat V.\et al.
Укр. фiз. ж., Vol: 52, No: 2 , published: 10 February 2008
Band-edge photoluminescence and reflectivity of nonpolar (11[overline 2]0) and semipolar (11[overline 2]2) GaN formed by epitaxial lateral overgrowth on sapphire
T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux
Phys. Rev. B: Condens. Matter, Vol: 77, No: 7 , published: 08 February 2008
Photoluminescence characterization of Al/Al[2]O[3]/InP MIS structures passivated by anodic oxidation
Mandjoub A.\Bourdoucen H.\Djelloul A.
Укр. фiз. ж., Vol: 50, No: 7 , published: 04 February 2008
CdSe/ZnSe heteroepitaxy: aspects of growth and self organization of nanostructures
Mahapatra S.\Kiessling T.\Margapoti E.\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
MBE growth of dilute magnetic (Zn,Mn)Se on Si substrates
Slobodskyy A.\Keller D.\Gould C.\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Influence of liquid-phase synthesis parameters on particle sizes and structural properties of nanocrystalline ZnO powders
Chory Christine\Neder Reinhard B.\Korsunskiy Vladimir I.\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Optical characterization of thermally annealed self-assembled ZnCdSe quantum dots
Margapoti E.\Worschech L.\Mahapatra S.\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Optical characterization of ZnSe/ZnMgSSe microdisks with embedded CdSe quantum dots
Renner Johannes\Worshech Lukas\Mahapatra Suddhasatta\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Magneto-optics of modulation doped quantum wells based on ~I~I_-~V~I semiconductor compounds
Astakhov G.V.\Ossau W.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Optical studies of structural and magnetic anisotropies in epitaxial CdSe/ZnSe quantum dots
Kiessling T.\Astakhov G.V.\Platonov A.V.\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Light controlled spin properties and radiative coupling of CdSe based quantum dots
Schmidt T.\Worschech L.\Scheibner M.\et al.
Phys. Status Solidi C, Vol: 4, No: 9 , published: 03 February 2008
Structural, optical and photoluminescence properties of ZnS:Cu nanoparticle thin films as a function of dopant concentration and quantum confinement effect
Jayanthi K.\Chawla S.\Chander H.\Haranath D.
Cryst. Res. Technol., Vol: 42, No: 10 , published: 03 February 2008
Nanocrystalline properties of chemically deposited (Cd[0.95]-Pb[0.05])S:CdCl[2], Gd/Dy films
Bhushan S.\Shrisvastava S.
Cryst. Res. Technol., Vol: 42, No: 10 , published: 03 February 2008
AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
Lin Tao/Zheng Kai/Ma Xiaoyu
Acta opt. sin=Guangxue xuebao , Vol: 28, No: 11 , published: 03 February 2008
Luminescence of isoelectronically implanted SiO[2] layers
Salh Roushdey\Fitting Kourkoutis L.\Schmidt B.\Fitting H.-J.
Phys. Status Solidi A, Vol: 204, No: 9 , published: 03 February 2008
Лазерная электронно-лучевая трубка с монолитным лазерным экраном
Бондарев В.Ю.\Козловский В.И.\Крыса А.Б.\и др.
Квант. электрон., Vol: 37, No: 9 , published: 03 February 2008
Наноструктура на основе ZnSe/ZnMgSSe для лазерной электронно-лучевой трубки в синей области спектра
Казаков И.П.\Козловский В.И.\Мартовицкий В.П.\и др.
Квант. электрон., Vol: 37, No: 9 , published: 03 February 2008
Exciton binding energy in type ~I~I quantum dots
Gomes P.F.\Godoy M.P.F.\Veloso A.B.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Dilute magnetic bulk GaN semiconductor and nanostructures (invited)
Ferguson I.T.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Surface acoustic wave mediated effects in a coupled multi quantum well
Ebbecke J.\Pierz K.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 _mm wavelength under resonant excitation
Labb~1e C.\Cornet C.\Folliot H.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Excitons spin dynamics in ZnO epilayers
Lagarde D.\Lombez L.\Balocchi A.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Erasable photomemory phenomena in Eu[2]O[3{_-}] and SrTiO[3] nanoparticles at room temperature
Mochizuki Shosuke\Fujishiro Fumito\Mochizuki Teruyuki\Yamamoto Hiroshi
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Effects of humidity and acetone on the optical and electrical properties of porous silicon nanostructures
Erdamar O.\Bilen B.\Skarlatos Y.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Bipolariton laser emission from a GaAs microcavity
Moreira L.M.\Gonzalez J.C.\Oliveira A.G.\Matinaga F.M.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grwon on GaAs substrate
Motyka M.\Kudrawiec R.\Misciewicz J.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Time-resolved photoluminescence and steady-state optical studies of GaInNAs and GaInAs single quantum wells
Sun Y.\Lombez L.\Braun P.F.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Photoluminescence studies in modulation doped GaInNAs/GaAs multiple quantum wells
Yilmaz M.\Ulug B.\Ulug A.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Фотолюминесцентные и гальваномагнитные свойства Cu[1_-y]In[1+y]Se[2+_d]
Мудрый А.В.\Таврина Т.В.\Рогачева Е.И.
Неорган. матер., Vol: 43, No: 9 , published: 02 February 2008
Structural and optical properties of 150 MeV Ti{+11} irradiated doped nanostructures
Das U./Mohanta D./Bordoloi A.K./et al.
Indian J. Phys., Vol: 82, No: 2 , published: 02 February 2008
Spontaneous emission enhancement in quantum cascade structures in the TeraHertz domain
Todorov Yanko\Sagnes Isabelle\Gennser Ulf\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2008
Analytical Evaluation of the Ratio Between Injection and Space-Charge Limited Currents in Single Carrier Organic Diodes
Alvarez, A.L.; Arredondo, B.; Romero, B.; Quintana, X.; Gutierrez-Llorente, A.; Mallavia, R.; Oton, J.M.
IEEE Trans. Electron Devices , Vol: 55, No: 2 , published: 01 February 2008
Fabrication and optical characterization of ~I~I~I-nitride air-bridge photonic crystal with GaN quantum dots
Li Ning\Arita M.\Kako S.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition
Kim Hee Jin\Kwon Soon-Yong\Kim Hyun Jin\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
High indium content AlInGaN films: growth, structure and optoelectronic properties
Nemoz M.\Beraudo E.\De Mierry P.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Surface modification and optical properties of blue InGaN single quantum well by in-situ thermal treatments
Lee Sung-Nam\Paek H.S.\Son J.K.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Growth kinetics and properties of ZnO/ZnMgO hetero-structures grown by radical-source molecular beam epitaxy
Ivanov S.V.\El-Shaer A.\Shubina T.V.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: towards realisation of nano-LEDs
Bakin A.\El-Shaer A.\Mofor A.C.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
ZnO films fabricated by spin coating and their application to UV electroluminescent devices
Yoshioka K.\Egawa S.\Kobayashi T.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures
Vierheilig C.\Braun H.\Schwarz U.T.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Radiative lifetime in wurtzite GaN/AlN quantum dots
Bardoux R.\Bretagnon T.\Guillet T.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
A comparative study of the internal quantum efficiency for the green MQWs grown on sapphire and FS-GaN substrates
Jeong Yong-Hee\Lee Hae-Yong\Park Jae-Young\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Investigation of internal field effect and blue-shift in InGaN-based blue laser diodes by time-resolved optical technique
Son J.K.\Sakong T.\Hwang J.S.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
The quantum efficiency of green GaInN/GaN light emitting diodes
Zhao W.\Li T.\Detchprohm T.\Wetzel C.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Quantum well-free nitride-based UV LEDs emitting at 380 nm
De Mierry Philippe\Tinjod Frank\Chenot S~1ebastien\Lancefield David
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application
Chu Chen-Fu\Cheng Chao-Chen\Liu Wen-Huan\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Fabrication and optical properties of blue LEDs with silica microsphere coating
Kusakabe K.\Funazaki S.\Okamoto K.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system
Kim K.H.\Jang K.S.\Hwang S.L.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Improvement of surface light extraction from flip-chip GaN-based LED by embossing of thermosetting polymers
Bao Kui\Zhang Bei\Wang ZhiMin\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices
Lee S.W.\Oh D.C.\Goto H.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Blue light emitting diodes on Si(001) grown by MOVPE
Schulze F.\Dadgar A.\Bertram F.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Current spreading and thermal effects in blue LED dice
Bulashevich K.A.\Evstratov I.Yu.\Mymrin V.F.\Karpov S.Yu.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Efficiency enhancement of 400 nm violet LEDs utilizing island-like GaN thick film by HVPE technology
Tsay Jenq-Dar\Liu Po Chun\Guo Yih-Der\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Fabrication of GaN-based electroluminescence devices on Al substrates and their application to red, green and blue pixels for flat-panel displays
Sugimoto Koichi\Egawa Shinichi\Arai Masatoshi\Honda Tohru
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Monolithic white light emitting diodes with a broad emission spectrum
Dussaigne A.\Brault J.\Damilano B.\Massies J.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays
Kobayashi Toshiaki\Egawa Shinichi\Sawada Masaru\Honda Tohru
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Sol-gel YAG:Ce{3+} powders for applications in LED devices
Potdevin A.\Chadeyron G.\Boyer D.\Mahiou R.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes
Ryu H.Y.\Ha K.H.\Lee S.N.\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Homoepitaxial laser diodes emitting at 390 nm and the influence of substrate quality
Figge Stephan\Dennemarck Jens\Hommel Detlef
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Deep ridge GaN cw-laser diodes
Dennemarck J.\Tessarek C.\Figge S.\Hommel D.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Spatial mapping on surface light extraction from 2D photonic quasicrystals patterned GaN-based light emitters
Zhang ZhenSheng\Zhang Bei\Dai Tao\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Cathodoluminescence study of InGaN MQW laser diodes using laser lift-off technique
Li Rui\Chen Weihua\Kang Xiangning\et al.
Phys. Status Solidi C, Vol: 4, No: 1 , published: 28 January 2008
Magnetic properties of Er,O-codoped GaAs at low temperature
Takemoto S.\Terao T.\Terai Y.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Anisotropy dependent magnetization relaxation in (Cd,Mn)Te quantum wells
Goryca M.\Kossacki P.\Ferrand D.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Spin-dependent type-~I~I band alignment and carrier spin dynamics in a diluted magnetic double quantum well
Koyama T.\Nishibayashi K.\Souma I.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Spin dynamics in self-assembled quantum dots coupled with a diluted magnetic semiconductor
Furuta T.\Hyomi K.\Souma I.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Time-resoved photoluminescence in annealed self-assembled InAs quantum dots
Nishida H.\Kayamori S.\Sasakura H.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN
Tackeuchi A.\Otake H.\Fujita T.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Fe/Tb multilayer ferromagnets for local semiconductor spin control
Halm S.\Neshataeva E.\Seifert F.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Overhauser shift in photoluminescence of excitons with fine structure from a single self-assembled InAlAs quantum dot
Mukumoto T.\Kaji R.\Sasakura H.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Spin-polarized surface-emitting lasers (invited)
Bhattacharya P.\Holub M.\Saha D.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Hydrostatic pressure experiments on dilute nitride alloys
Klar P.J.\Teubert J.\G:ungerich M.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
High pressure studies of radiative recombination mechanisms in InN
Suski T.\Franssen G.\Teisseyre H.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Dependence of the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots on the quantum dot size
Kristukat C.\Go~6ni A.R.\P~:otschke K.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
Ruiz-Castillo M.\Segura A.\Sans J.A.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Pressure behaviour of the UV and green emission bands in ZnO micro-rods
Li G.H.\Su F.H.\Wang W.J.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Photoluminescence of CdSe quantum dots with Zn[0.38]Cd[0.23]Mg[0.39]Se barriers under hydrostatic pressure
Reparaz J.S.\Go~6ni A.R.\Alonso M.I.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Excitaion and pressure effects on photoluminescence from dislocation engineered silicon mateiral
Ishibashi Y.\Kobayashi T.\Prins A.D.\Nakahara J.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Spin injection with three terminal device based on (Ga,Mn)As/n{+}-GaAs tunnel junction
Kita T.\Kohda M.\Ohno Y.\et al.
Phys. Status Solidi C, Vol: 3, No: 12 , published: 27 January 2008
Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure
Franssen G.\Suski T.\Perlin P.\et al.
Phys. Status Solidi B, Vol: 244, No: 1 , published: 27 January 2008
Оптическая спектроскопия свободных экситонов в халькопиритном полупроводниковом соединении CuInS[2]
Мудрый А.В./Иванюкович А.В./Якушев М.В./и др.
Физ. и техн. полупроводников , Vol: 42, No: 1 , published: 26 January 2008
Сэндвич-структура InGaAs/GaAs с квантовыми точками для инфракрасных фотоприемников
Молдавская Л.Д./Востоков Н.В./Гапонова Д.М./и др.
Физ. и техн. полупроводников , Vol: 42, No: 1 , published: 26 January 2008
Антиструктурные дефекты в фосфиде индия, легированного оловом
Алиев М.И./Рашидова Ш.Ш./Гусейнова М.А./и др.
Trans. Nat. Acad. of Sci. of Azerb. Ser. Phys.-Techn. and Math. Sci., Vol: 27, No: 2 , published: 25 January 2008
Growth kinetic and characterization of RF-sputtered ZnO:Al nanostructures
Choopun Supab/Hongsith Niyom/Wongrat Ekasiddh/et al.
J. Am. Ceram. Soc. , Vol: 91, No: 1 , published: 25 January 2008
Photoluminescence of the beryllium acceptor at the centre of quantum wells
Zheng Wimin/Li Sumei/Lu Yingbo/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 11 , published: 23 January 2008
The origin of multi-peak structures observed in photoluminescence spectra of InAs/GaAs quantum dots
Liang Zhimei/Wu Ju/Jin Peng/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 11 , published: 23 January 2008
Extion recombination in the coupling structure of a ZnCdSe quantum well and CdSe quantum dots
Jin Hua/Bu Faliang/Li Lihua/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 11 , published: 23 January 2008
Photoluminescence properties of ZnO nanorods prepared under low temperature
Lang Jihui/Yang Jinghai/Li Changsheng/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 29, No: 11 , published: 23 January 2008
Фотопроводимость гетероструктур InAs/GaAs с квантовыми точками при комнатной температуре в диапазоне 1-2.6 mm
Дроздов М.Н./Данильцев В.М./Модлавская Л.Д./Шашкин В.И.
Письма в ЖТФ, Vol: 34, No: 1 , published: 22 January 2008
InAsSbP/InAs гетероструктуры для термофотовольтаических преобразователей: получение и свойства
Геворкян В.А./Арутюнян В.М./Гамбарян К.М./и др.
Письма в ЖТФ, Vol: 34, No: 2 , published: 22 January 2008
Electronic structure of intrinsic defects and mechanism of donor-acceptor pair luminescence in CuI crystal
Liu Hai-Lan\Gu Mu\Zhang Rui\et al.
Acta phys. sin., Vol: 55, No: 12 , published: 21 January 2008
Корреляция люминесцентных свойств с изменением характера структурной организации в сверхрешетках AlGaN/GaN после имплантации ионов эрбия и отжига
Баранов Е.Е.\Емельянов А.М.\Лундин В.В.\и др.
Ж. техн. физ., Vol: 76, No: 12 , published: 21 January 2008
Comparative study of Mn and Fe incorporation into GaN by metalorganic chemical vapor deposition
Kane M.H.\Gupta S.\Fenwick W.E.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Optical, structural, and magnetic properties of p-type GaN implanted with Fe{+} (5 and 10 at%)
Shon Yoon\Park Young S.\Lee Seejoon\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers
Wegscheider M.\Simbrunner C.\Przybyli~1nska H.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Incoherent and coherent spin manipulation in ferromagnet_-dilute magnetic semiconducotr hybrids
Halm Simon\Hohage Patric Erich\Neshataeva Ekaterina\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Role of hyperfine interaction on electron spin optical orientation in charge-controlled InAs_-GaAs single quantum dots
Krebs O.\Eble B.\Lema~7itre A.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Electron spin dynamics in GaAsN and InGaAsN structures
Lagarde D.\Lombez L.\Marie X.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Correlation of CdSe quantum dot morphology, structure design and lasing properties of optically pumped green CdSe/ZnMgSSe lasers
Ivanov S.V.\Lyublinskaya O.G.\Sedova I.V.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Reduction of stacking faults in (11~-20) GaN films by ELO techniques and benefit on GaN wells emission
Bougrioua Z.\La~:ugt M.\Venn~1egu~2es P.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
The growth and rare-earth doping of GaN quantum dots on Al[x]Ga[1_-x]N layer by plasma-assisted molecular beam epitaxy
Hori Y.\Andreev T.\Bellet-Amalric E.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
Monemar B.\Paskov P.P.\Bergman J.P.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
Rozhansky I.V.\Zakheim D.A.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Injection level dependent luminescence characteristics of UV_-violet emitting (AlGaIn)N LED structures
Kunzer M.\Baeumler M.\K~:ohler K.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Hybrid ZnO/~I~I~I-nitride light-emitting diodes: modelling analysis of operation
Bulashevich K.A.\Evstratov I.Yu.\Karpov S.Yu.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Characteristics of InGaN light-emitting diodes on GaN substrates with low threading dislocation densities
Akita Katsushi\Kyono Takashi\Yoshizumi Yusuke\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
Jia Chuanyu\Yu Tongjun\Hu Xiaodong\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD
Jahn Uwe\Jiang De-Sheng\Ploog Klaus H.\et al.
Phys. Status Solidi A, Vol: 204, No: 1 , published: 20 January 2008
Preparation of CdSe quantum dots in ionic liquids
Newman Peter J.\MacFarlane Douglas R.
Z. phys. Chem., Vol: 220, No: 10-11 , published: 19 January 2008
Self assembled InAs/InP quantum dots for telecom applications in the 1.55 _mm wavelength range: wavelength tuning stacking, polarization control, and lasing
N~:otzel Richard\Anantathanasarn Sanguan\Van Veldhoven Ren~1e P.J.\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 8В , published: 19 January 2008
Люминесценция кубического нитрида бора, активированного самарием
Шишонок Е.М./Леончик С.В./Стидс Дж.В.
Ж. прикл. спектроскопии, Vol: 75, No: 1 , published: 17 January 2008
Механизмы спонтанной и стимулированной рекомбиации во множественных квантовых ямах InGaN/GaN-гетероструктур на кремниевых подложках
Зубелевич В.З./Луценко Е.В./Павловский В.Н./и др.
Ж. прикл. спектроскопии, Vol: 75, No: 1 , published: 17 January 2008
Photoluminescence of LPCVD Si-rich SiN[x] films deposited at different temperatures
Liu Yuzhen\Chen Dapeng\Wang Xiaobo\Dong Lijun
Bandaoti xuebao = Chin. J. Semicond., Vol: 26, No: 8 , published: 14 January 2008
MOCVD growth and properties of Ga-doped ZnO films
Zhu Shunming\Ye Jiandong\Gu Shulin\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 26, No: 8 , published: 14 January 2008
Doping induced structural changes in CuInS[2] thin films and the effects on optical and electrical properties
Enzenhofer T.\Unold T.\Schock H.W.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Characterization of Cu(In,Ga)Se[2] thin films by time-resolved photoluminescence
Shimakawa Shin-ichi\Kitani Kimihiko\Hayashi Shigeo\et al.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Positive temperature variation of the bandgap energy in AgGaSe[2]
Ozaki Shunji\Sasaki Manabu\Adachi Sadao
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Epitaxial growth and optical investigations of ZnTeO alloys
Nabetani Y.\Okuno T.\Aoki K.\et al.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Studies of quantum levels in GaInNAs single quantum wells
Shirakata Sho\Kondow Masahiko\Kitatani Takeshi
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Synthesis and impurity doping of GaN powders by the two-stage vapor-phase method for phosphor applications
Hara K.\Okuyama E.\Yonemura A.\et al.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Effect of co-doping of Ce{3+} and alkaline metals on the photoluminescence in CaGa[2]S[4] and SrGa[2]S[4] hosts
Hidaka Chiharu\Miura Kazutaka\Oikawa Shinya\Takizawa Takeo
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La[2]CdO[2]Se[2]
Hiramatsu Hidenori\Kamioka Hayato\Ueda Kazushige\et al.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Donor-acceptor pair recombination luminescence from Cu[2]ZnSnS[4] bulk single crystals
Tanaka K.\Miyamoto Y.\Uchiki H.\et al.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Optical characterization of CuInSe[2] single crystals prepared by travelling heater method
Shirakata Sho\Miyake Hideto
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Superimposed emissions on enhanced green emission from ZnO:Pr powders by evacuated sealed silica tube method (brief communication)
Inoue Yoshihiro\Okamoto Masaki\Morimoto Jun
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 5А , published: 13 January 2008
Optical properties of TlInGaAs/TlInP/InP laser diodes
Fujiwara A.\Matsumoto T.\Krishnamurthy D.\et al.
Phys. Status Solidi A, Vol: 203, No: 11 , published: 13 January 2008
Ultraviolet InAlGaN light emitting diodes grown on hydride vapor phase epitaxy AlGaN/sapphire templates
Kneissl Michael\Yang Zhihong\Teepe Mark\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 5А , published: 13 January 2008
Enhanced luminesence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes (brief communication)
Lee Chong-Yi\Yen Chih-Hung\Su Juh-Yuh\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 5А , published: 13 January 2008
Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)
Sarusi G.\Moshe O.\Khatsevich S.\et al.
J. Electron. Mater., Vol: 35, No: 12 , published: 13 January 2008
Светодиоды на основе твердых растворов Ga[1_-x]In[x]As[y]Sb[1_-y], выращенных из содержащих свинец растворов-расплавов
Пархоменко Я.А.\Астахова А.П.\Гребенщикова Е.А.\и др.
Письма в ЖТФ, Vol: 30, No: 13 , published: 12 January 2008
Генетический поиск модельных параметров при аппроксимации кривых термолюминесценции
Вайнштейн И.А.\Попко Е.А.
Письма в ЖТФ, Vol: 32, No: 12 , published: 12 January 2008
Analysis of gain and luminescence in violet and blue GaInN_-GaN quantum wells
Witzigmann Bernd/Tomamichel Marco/Steiger Sebastian/et al.
IEEE J. Quantum Electron. , Vol: 44, No: 1-2 , published: 10 January 2008
Структура и фотолюминесценция нанокомпозиций сульфида кадмия с полипропиленом
Магеррамов А.М./Рамазанов М.А./Гаджиева Ф.В.
Физ. и химия обраб. матер., Vol: 2008, No: 1 , published: 09 January 2008
Диффузия бериллия и его влияние на люминесцентные и электрические свойства InP
Агаев В.В.\Арсентьев И.Н.\Метревели С.Г.\и др.
Письма в ЖТФ, Vol: 33, No: 16 , published: 06 January 2008
The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-_mm multiple quantum-well structures
Akram Muhammad Nadeem\Kjebon Olle\Marcinkevi~3cius Saulius\et al.
IEEE J. Quantum Electron. , Vol: 42, No: 7-8 , published: 06 January 2008
Tunnel coupling in asymmetric semimagnetic double quantum wells
S. V. Zaitsev, M. K. Welsch, A. Forchel, G. Bacher
Phys. Status Solidi B, Vol: 245, No: 1 , published: 01 January 2008
Luminescence spectroscopy of Eu-implanted zincblende GaN
I. S. Roqan, K. P. O'Donnell, C. Trager-Cowan, B. Hourahine, R. W. Martin, K. Lorenz, E. Alves, D. J. As, M. Panfilova, I. M. Watson
Phys. Status Solidi B, Vol: 245, No: 1 , published: 01 January 2008
Влияние дефектного состояния образцов на спектры люминесценции облученных электронами монокристаллов CdS
Давидюк Г.Е./Божко В.В./Мирончук Г.Л./Панкевич В.З.
Физ. тверд. тела, Vol: 49, No: 12 , published: 30 December 2007
Электродинамические свойства нанопористого кремния в диапазоне от терагерцового до инфракрасного
Жукова Е.С./Прохоров А.С./Спектор И.Е./и др.
Физ. тверд. тела, Vol: 49, No: 12 , published: 30 December 2007
Влияние отжига на люминесцентные свойства и состав собственных дефектов ZnO
Грузинцев А.Н.\Якимов Е.Е.
Неорган. матер., Vol: 41, No: 7 , published: 28 December 2007
Фотолюминесценция и электропроводность стекол As[2]S[3] и As[2]S[5]
Бабаев А.А.\Камилов И.К.\Султанов С.Б.\и др.
Неорган. матер., Vol: 41, No: 7 , published: 28 December 2007
Влияние примеси висмута на спектральные характеристики CdI[2]
Кравчук И.М.\Новосад С.С.\Войцеховская А.М.
Неорган. матер., Vol: 41, No: 7 , published: 28 December 2007
Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films
Xue Shu-Wen\Zu Xiao-Tao\Su Hai-Qiao\et al.
Chin. Phys., Vol: 16, No: 4 , published: 28 December 2007
Optical processes in the formation ion of stimulated emission from ZnO nanowires
Liu Ryu Bin\Pan An-Lian\Wang Fei-Fei\Zou Bing-Suo
Chin. Phys., Vol: 16, No: 4 , published: 28 December 2007
Люминесценция полумагнитного полупроводника CdMnTe в области длин волн 370-400 nm при высоких уровнях возбуждения
Аксянов И.Г.\Компан М.Е.\Меш М.В.
Физ. тверд. тела, Vol: 49, No: 4 , published: 28 December 2007
Люминесценция тонких пленок германата висмута со структурой эвлитина и бенотоита
Бордун О.М.\Кухарский И.И.\Антонюк В.Г.
Ж. прикл. спектроскопии, Vol: 72, No: 3 , published: 28 December 2007
Отрицательная люминесценция и приборы на ее основе
Иванов-Омский В.И.\Матвеев Б.А.
Физ. и техн. полупроводников , Vol: 41, No: 3 , published: 28 December 2007
Дислокационная люминесценция в кремнии, обусловленная имплантацией ионов кислорода и последующим отжигом
Соболев Н.А.\Бер Б.Я.\Емельянов А.М.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 3 , published: 28 December 2007
Природа полос поглощения порошков TiO[2], облученных электронами при 77 К
Михайлов М.М.
Физ. и химия обраб. матер., Vol: 2007, No: 1 , published: 26 December 2007
Экситоны в искусственных квантовых точках в режиме слабого пространственного конфайнмента
Зайцев С.В./Вельш М.К./Форхел А./Бахер Г.
Ж. эксперим. и теор. физ., Vol: 132, No: 6 , published: 24 December 2007
Фильтрация электронов по спину в поле объемного заряда в GaAs/AlGaAs
Джиоев Р.И.\Захарченя Б.П.\Лазарев М.В.\Ткачук М.Н.
Физ. тверд. тела, Vol: 47, No: 8 , published: 23 December 2007
Большой синий сдвиг максимума спектра фотолюминесценции квантовых ям в GaN, возникающий при росте мощности лазерного возбуждения
Якобсон М.А.\Нельсон Д.К.\Константинов О.В.\Матвеенцев А.В.
Письма в ЖТФ, Vol: 31, No: 13 , published: 23 December 2007
Влияние времени экспозиции в потоке мышьяка на оптические свойства ансамблей квантовых точек в системе InAs/GaAs(100)
Дубровский В.Г.\Крыжановская Н.В.\Устинов В.М.\и др.
Письма в ЖТФ, Vol: 30, No: 7 , published: 23 December 2007
Near band-edge 3.357 eV emission of Ga-face (0001) grown by ammonothermal method
Fujii Katsushi\Fujimoto Gakuyo\Goto Takenari\et al.
Phys. Status Solidi A, Vol: 204, No: 12 , published: 23 December 2007
Luminescence of Si/SiO[2]/Si structure formed by oxygen implantation
Shen Zhonghan\Wu Changliang\Lu Qian\et al.
Phys. Status Solidi A, Vol: 204, No: 12 , published: 23 December 2007
Влияние структуры молекул фталоцианинов меди на характер их упорядочения в тонких пленках, спектры фотолюминесценции и поглощения
Берковиц В.Л.\Зиминов А.В.\Казанский А.Г.\и др.
Физ. тверд. тела, Vol: 49, No: 2 , published: 22 December 2007
Нелинейное поглощение и преломление света в коллоидном растворе квантовых точек CdSe/ZnS при резонансном двухфотонном возбуждении
Днепровский В.С.\Жуков Е.А.\Кабанин Д.А.\и др.
Физ. тверд. тела, Vol: 49, No: 2 , published: 22 December 2007
Получение гетерослоев ZnO на подложках халькогенидов цинка
Махний В.П./Слетов М.М./Хуснутдинов С.В.
Неорган. матер., Vol: 43, No: 12 , published: 21 December 2007
Resonant photoluminescence imaging and the origin of excited states in self-assembled quantum dots
T. A. Nguyen, S. Mackowski, T. B. Hoang, H. E. Jackson, L. M. Smith, and G. Karczewski
Phys. Rev. B: Condens. Matter, Vol: 76, No: 24 , published: 20 December 2007
Electronic structure of InN studied using soft x-ray emission, soft x-ray absorption, and quasiparticle band structure calculations
L. F. J. Piper, Leyla Colakerol, Timothy Learmonth, Per-Anders Glans, Kevin E. Smith, F. Fuchs, J. Furthmüller, F. Bechstedt, Tai-Chou Chen, T. D. Moustakas, and J.-H. Guo
Phys. Rev. B: Condens. Matter, Vol: 76, No: 24 , published: 18 December 2007
Свойства силиката эрбия с примесью хрома в пористом кремнии
Демидов Е.С.\Карзанов В.В.\Демидова Н.Е.\и др.
Физ. тверд. тела, Vol: 49, No: 3 , published: 16 December 2007
Photoelectric and photothermal investigations of Zn[1_-x_-y]Be[x]Mn[y]Se solid solutions
Firszt F./Strza~mkowski K./Zarkrzewski A.J./et al.
Cryst. Res. Technol., Vol: 42, No: 12 , published: 16 December 2007
Growth and optical characteristics of 408nm InGaN/GaN MQW LED
Wang Xiaohua\Zhan Wang\Liu Guojun
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 1 , published: 16 December 2007
Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films
Chakraborty Arpan\Haskell Benjamin A.\Wu Feng\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 2 , published: 10 December 2007
Long-wavelength multilayered InAs quantum dot lasers
Shimizu Hitoshi\Saravanan Shanmugam\Yoshida Junji\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 2 , published: 10 December 2007
Pseudo nanocrystal silicon induced luminescence enhancement in a-Si/SiO[2] multilayers
Han Pei-Gao\Ma Zhong-Yuan\Xia Zheng-Yue\et al.
Chin. Phys., Vol: 16, No: 5 , published: 10 December 2007
Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing
Salhi B.\Gelloz B.\Koshida N.\et al.
Phys. Status Solidi A, Vol: 204, No: 5 , published: 10 December 2007
Rare earth ions in porous silicon: optical properties
Elhouichet H.\Ouslati M.
Phys. Status Solidi A, Vol: 204, No: 5 , published: 10 December 2007
Cathodoluminescence and photoluminescence of individual silicon nanowires
Dovrat M.\Arad N.\Zhang X.H.\et al.
Phys. Status Solidi A, Vol: 204, No: 5 , published: 10 December 2007
Porous silica_-laser dye composite: physical and optical properties
Chouket A.\Elhouichet H.\Boukherroub R.\Oueslati M.
Phys. Status Solidi A, Vol: 204, No: 5 , published: 10 December 2007
Luminescence properties of the porphyrin/porous silicon composites
Chirvony V.S.\Bolotin V.L.\Ovejero J.\et al.
Phys. Status Solidi A, Vol: 204, No: 5 , published: 10 December 2007
Observation of biexciton-resonant hyper-parametric scattering in SiO2/CuCl layered structures
Nakayama Masaaki\Nishioka Takashi\Wakaiki Shuji\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 8-11 , published: 10 December 2007
Влияние легирования щелочными металлами на фотолюминесценцию пленок CdS
Клюев В.Г.\Майорова Т.Л.
Ж. прикл. спектроскопии, Vol: 74, No: 3 , published: 10 December 2007
Влияние импульсного магнитного поля на люминесценцию легированного CuCl, In и MnS сульфида цинка
Бачериков Ю.Ю.\Кицюк Н.В.\Константинова Т.Е.\Дорошкевич А.С.
Ж. прикл. спектроскопии, Vol: 74, No: 3 , published: 10 December 2007
Влияние магнитного поля на свободные и связанные экситоны в халькопиритном соединении CuInS[2]
Мудрый А.В.\Иванюкович А.В.\Якушев М.В.\и др.
Ж. прикл. спектроскопии, Vol: 74, No: 3 , published: 10 December 2007
Про взаемодiю атомiв водню iз складними дефектами в CdTe i ZnTe
Цюцюра Д.I./Корбутяк Д.В./Шгур О.М./и др.
Укр. фiз. ж., Vol: 52, No: 12 , published: 10 December 2007
Фотолюмiнесценцiя наночастинок CdSe в електричному полi
Бачерiков Ю.Ю./Давиденко М.О./Оптасюк С.В./Дмитрук I.М.
Укр. фiз. ж., Vol: 52, No: 12 , published: 10 December 2007
Structural and optical properties of ZnMgO films grown by metal organic decomposition (brief communication)
Guo Qixin\Tanaka Tooru\Nishio Mitsuhiro\Ogawa Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 2 , published: 10 December 2007
Электролюминесценция в изотипных гетероструктурах n-GaSb/n-AlGaAsSb/n-GaInAsSb, обусловленная ударной ионизацией
Баженов Н.Л./Журтанов Б.Е./Мынбаев К.Д./и др.
Письма в ЖТФ, Vol: 33, No: 23 , published: 09 December 2007
Characterisation of ZnS nanocrystals prepared by wet chemical method
Singh W. Shambhunath/Singh N. Shanta/Soni Ajay/et al.
Indian J. Phys., Vol: 81, No: 12 , published: 09 December 2007
Электронно-дырочная жидкость в напряженных SiGe-слоях кремниевых гетероструктур
Бурбаев Т.М.\Бобрик Е.А.\Курбатов В.А.\и др.
Письма в ЖЭТФ, Vol: 85, No: 7-8 , published: 08 December 2007
Low-temperature growth of ZnO thin film by metalorganic chemical vapor deposition
Kim Dong Chan\Kong Bo Hyun\Cho Hyung Koun\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition
Liu Chunli\Chang S.H.\Noh T.W.\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Photo-induced changes of photoconductivity and exciton luminescence in ZnO crystals
Markevich I.V.\Kushnirenko V.I.\Bulakh B.M.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Growth and characterization study of multidimensional hierarchical ZnO nanostructure
Park Dong Jun\Kim Dong Chan\Lee Jeong Yong\Cho Hyung Koun
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Two-colour spectroscopy of ZnSe:Cr
Ivanov Vitalii Yu.\Godlewski Marek\Gregorkiewicz Tom
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE
Saito Katsuhiko\Fujimoto Kenji\Yamaguchi Kouji\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Optical characterization of Zn[0.97]Mn[0.03]Se/ZnSe[0.92]Te[0.08] type ~I~I multiple-quantum-well structures
Lin D.Y.\Shiu J.J.\Weu J.D.\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Growth and properties of Zn[1_-x_-y]Be[x]Mn[y]Se crystals
Firszt F.\~l~8egowski S.\M~8eczy~1nska H.\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Laser controlled magnetization in bulk Zn[1_-x]Mn[x]Te
Le Van Khoi\Avdonin A.\Ga~m~8azka R.R.\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Modification of the photoluminescence characteriscis of CdZnTe/ZnTe QWs by CdTe monolayer film insertion
Borkovska L.V.\Korsunska N.O.\Sadofyev Yu.G.\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Optical observation of discrete well width fluctuations in wide band gap ~I~I~I-nitride quantum wells
Haratizadeh H.\Monemar B.\Paskov Plamen P.\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Study on optical properties of Er/Er|O doped GaN thin films
Song Shu-Fan\Chen Wei-De\Xu Zhen-Jia\Xu Xu-Rong
Acta phys. sin., Vol: 56, No: 3 , published: 08 December 2007
High quality SnO[2] crystals grown with catalyst-assistance and study on their photoluminescent spectroscopy
Ding Cai-Rong\Wang Bing\Yang Guo-Wei\Wang He-Zhou
Acta phys. sin., Vol: 56, No: 3 , published: 08 December 2007
Cathodoluminescence of single ZnO nanorod heterostructures
Piechal Bernard\Yoo Jinkyoung\Elshaer Abdelhamid\et al.
Phys. Status Solidi B, Vol: 244, No: 5 , published: 08 December 2007
Morphological Structure and Optical Property of Anthracene Single Crystals Grown from Solution
Huiping Li, Deqiang Zhang, Lian Duan, Guifang Dong, Liduo Wang, and Yong Qiu<
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 12 , published: 06 December 2007
Polarization sensitive spectroscopy of charged quantum dots
E. Poem, J. Shemesh, I. Marderfeld, D. Galushko, N. Akopian, D. Gershoni, B. D. Gerardot, A. Badolato, and P. M. Petroff
Phys. Rev. B: Condens. Matter, Vol: 76, No: 23 , published: 04 December 2007
Примесные центры редкоземельных ионов (Eu, Sm, Er) в вюрцитных кристаллах GaN
Криволапчук В.В.\Кожанова Ю.В.\Лундин В.В.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 11 , published: 02 December 2007
Влияние протонного облучения на кинетику затухания фосфоресценции керамики ZnS_-Cu
Кучакова Т.А.\Весна Г.В.\Макара В.А.
Физ. и техн. полупроводников , Vol: 38, No: 11 , published: 02 December 2007
Механизм фотогенерации носителей заряда в полиамидиновых супрамолекулярных структурах
Александрова Е.Л.\Дудкина М.М.\Теньковцев А.В.
Физ. и техн. полупроводников , Vol: 38, No: 11 , published: 02 December 2007
Влияние адсорбции донорных и акцепторных молекул на рекомбинационные свойства кремниевых нанокристаллов
Константинова Е.А.\Рябчиков Ю.В.\Осминкина Л.А.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 11 , published: 02 December 2007
Управление энергетическим спектром квантовых точек InAs/GaAs изменением толщины и состава тонкого двойного покровного слоя GaAs/InGaAs
Карпович И.А.\Звонков Б.Н.\Левичев С.Б.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 4 , published: 01 December 2007
Исследования физических явлений в полупроводниковых наноструктурах с использованием планарно-неоднородных слоев. Фотолюминесценция туннельно-связанных квантовых ям
Хабаров Ю.В.\Капаев В.В.\Петров В.А.
Физ. и техн. полупроводников , Vol: 38, No: 4 , published: 01 December 2007
Модель фооотжига собственных дефектов гексагональных квантовых точек CdS[x]Se[1_-x]
Кунец В.П.\Кулиш Н.Р.\Лисица М.П.\Брыкса В.П.
Физ. и техн. полупроводников , Vol: 38, No: 4 , published: 01 December 2007
Экситонная фотолюминесценция в легированных квази-1D структурах на основе кремния
Саченко А.В.\Корбутяк Д.В.\Крюченко Ю.В.\Сресели О.М.
Физ. и техн. полупроводников , Vol: 38, No: 4 , published: 01 December 2007
Эффекты слабой локализации и электрон-электронного взаимодействия в гетероструктурах GaAs_-AlGaAs
Бумай Ю.А.\Лукашевич М.Г.\Скрипка Д.А.\и др.
Ж. прикл. спектроскопии, Vol: 71, No: 1 , published: 01 December 2007
Влияние йодсодержащих растворов на состояние поверхности пористого кремния и его фотолюминесцентные свойства
Волошина Т.В.\Кавецкая И.В.\Караванский В.А.
Ж. прикл. спектроскопии, Vol: 71, No: 1 , published: 01 December 2007
Антистоксовы полосы собственного излучения в кристаллах нелегированного GaAs
Литвинова М.Б.
Ж. прикл. спектроскопии, Vol: 71, No: 1 , published: 01 December 2007
Current and Temperature Dependent Characteristics of Deep-Ultraviolet Light-Emitting Diodes
Cao, X.A.; LeBoeuf, S.F.
IEEE Trans. Electron Devices , Vol: 54, No: 12 , published: 01 December 2007
Фотолюминесценция нанокристаллов Ga[2]S[3]:Eu
Тагиев Б.Г./Тагиев О.Б./Мишина Т.Г./и др.
Письма в ЖТФ, Vol: 33, No: 22 , published: 30 November 2007
Эффективное оптическое возбуждение и резонансная люминесценция ионов эрбия в спектральной области собственных мод планарного микрорезонатора
Медведев А.В./Дудкин А.А./Певцов А.Б./и др.
Письма в ЖТФ, Vol: 33, No: 22 , published: 30 November 2007
Precise Analysis of Surface Recombination Velocity in Crystalline Silicon Solar Cells Using Electroluminescence
Yu Takahashi, Hayato Kondo, Tsutomu Yamazaki, Yukiharu Uraoka, and Takashi Fuyuki
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 45-49 , published: 30 November 2007
Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation
Chen Jenn-Fang\Hsiao Ru-Shang\Hsieh Pei-Chen\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 7 , published: 26 November 2007
Крупномасштабная когерентность бозе-конденсата пространственно-непрямых экситонов
Горбунов А.В.\Тимофеев В.Б.
Письма в ЖЭТФ, Vol: 84, No: 5-6 , published: 26 November 2007
Interwell exciton relaxation in semimagnetic asymmetric double quantum wells
Zaitsev S.V.\Brichkin A.S.\Dorozhkin P.S.\Bacher G.
Письма в ЖЭТФ, Vol: 84, No: 5-6 , published: 26 November 2007
Topography dependence of tunneling-induced fluorescence from porphyrin film
Nishitani Ryusuke\Tobaru Masashi\Kasuya Atsuo\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 24-28 , published: 26 November 2007
Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy
Sugimoto Hiroki\Inoue Masaaki\Tajima Michio\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 24-28 , published: 26 November 2007
Strain-compensated GaAsN/InGaAs superlattice structure solar cells
Wu Pei-Hsuan\Su Yan-Kuin\Chen I-Liang\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 24-28 , published: 26 November 2007
Investigation of spin voltaic effect in a p_-n heterojunction
Kondo Tsuyoshi\Hayafuji Jun-ji\Munekata Hiro
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 24-28 , published: 26 November 2007
Electro-luminescence from ultra-thin silicon
Saito Shin-ichi\Hisamoto Digh\Shimizu Haruka\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 24-28 , published: 26 November 2007
Послесвечение вюрцитных кристаллов GaN, легированных редкоземельными металлами
Криполапчук В.В.\Мездрогина М.М.
Физ. тверд. тела, Vol: 46, No: 12 , published: 26 November 2007
Энергетическая релаксация экситонных поляритонов в полупроводниковых микрорезонаторах и ее влияние на параметрическое рассеяние поляритонов
Крижановский Д.Н.\Махонин М.Н.\Тартаковский А.И.\Кулаковский В.Д.
Ж. эксперим. и теор. физ., Vol: 127, No: 1 , published: 26 November 2007
Фотолюминесценция в нанокомпозитах на основе поливинилденфторида и наполнителя CdS
Рамазанов М.А.
Прикл. физ., Vol: 2007, No: 6 , published: 26 November 2007
Magnetic field dependence of electroluminescence properties of metal_-insulator_-metal devices consisting of Au/GaAs junctions
Manago Takashi\Sun Zhi-Gang\Akinaga Hiro
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 7 , published: 26 November 2007
Спектры электролюминесценции и коэффициент полезного действия светодиодов на основе твердого раствора InGaN
Грушко Н.С./Потанахина Л.Н.
Прикл. физ., Vol: 2007, No: 6 , published: 26 November 2007
Электролюминесцентные переключатели на основе монокристаллов твердых растворов GaS[x]Se[1_-x]
Кязым-заде А.Г./Салманов В.М./Дадашова В.В.
Прикл. физ., Vol: 2007, No: 4 , published: 26 November 2007
Growth and characterics of GaN film on thin AlN/(0001) sapphire template layer via direct reaction of gallium and ammonia
Yan Fawang\Nishino Katsushi\Sakai Shiro
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 24-28 , published: 26 November 2007
Математическое моделирование зависимостей интенсивности монохроматической катодолюминесценции от энергии электронов пучка для двухслойной полупроводниковой структуры
Снопова М.Г./Хохлов А.Г./Михеев Н.Н./Степович М.А.
Прикл. физ., Vol: 2007, No: 1 , published: 26 November 2007
Resonant Raman scattering and photoluminescence emissions from above bandgap levels in dilute GaAsN alloys
Tan P.H.\Luo X.D.\Ge W.K.\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 3 , published: 25 November 2007
Effect of surface-covered annealing on the optical properties of ZnO films grown by MOCVD
Wang Li\Pu Yong\Fang Wenqing\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 3 , published: 25 November 2007
Fabrication and characteristics of In[2]O[3] nanowires
Liu Bin\Li Liang\Xiu Xiangqian\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 3 , published: 25 November 2007
Влияние изо- и гетеровалентного замещения на люминесцентные свойства CdS в системах Zn, Cd~PS, Te; Ni(~I~I~I), Cd~PS, Te
Один И.Н.\Чукичев М.В.\Висицкий Е.В.\и др.
Неорган. матер., Vol: 42, No: 10 , published: 25 November 2007
Индуцированное и спонтанное излучение структур Cd[x]Hg[1_-x]Te в диапазоне 3.2_-3.7 мкм при 77 К
Ноздрин Ю.Н.\Окомельков А.В.\Котков А.П.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 12 , published: 25 November 2007
Фотолюминесценция электронно-дырочной плазмы в полуизолирующем нелегированном GaAs
Коваленко В.Ф.\Шутов С.В.
Физ. и техн. полупроводников , Vol: 38, No: 12 , published: 25 November 2007
Люминесцентные свойства ZnO-микрорезонаторов цилиндрической формы
Грузинцев А.Н.\Волков В.Т.\Дубонос С.В.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 12 , published: 25 November 2007
Incorporation of P in CuInS[2] using InP as a p-type dopant
Kato T.\Yamaguchi H.\Nakamura T.\et al.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Optical absorption and photoluminescence of CuAlTe[2]
Kurzun B.V.\Fadzeyeva A.A.\Mudryi A.V.\Schorr S.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Growth of CuInS[2] crystals from melt and their properties
Satoh N.\Abe K.\Wakita K.\Mochizuki K.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Sturctural and optical characterization of GaSb layers on Si (001) substrates
Toda T.\Jinbo Y.\Uchitomi N.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Effect of Sb composition on the conduction type and photoluminescence of heavily Sn-doped GaAs[1_-x]Sb[x]
Sasaki T.\Jinbo Y.\Uchitomi N.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Charge compensation effect on photoluminescence properties of stoichiometric neodymium molybdate and tungstate
Kato A.\Uchitomi N.\Oishi S.\et al.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Time-resolved emissions of bound excitons in CuInS[2] crystals grown by Bridgamn method
Ogushi N.\Abe K.\Wakita K.\et al.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Optical properties of Cd(Ga[1_-x]Tm[x])[2]S[4] (x=0.01) single crystals
Kim Chang-Dae\Jin Moon-Seog
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Anomalous dependence of photoluminescence properties on composition x in Cd[1_-x]Mn[x]Ga[2]S[4] mixed crystals
Park Hyun\Kim Young-San\Hyun Seung-Cheol\et al.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Spin-flip energy transfer from photocarriers to magentic ions in (Cd,Mn)Te
Kuroda Takashi\Seto Satoru\Minami Fujio\Kido Giyuu
J. Phys. Soc. Jpn., Vol: 75, No: 8 , published: 24 November 2007
Optical and electrical properties of phosphorus-doped ZnMgTe bulk crystals grown by Bridgman method
Saito K.\So G.\Tanaka T.\et al.
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
The effect of Ge doping for lattice-mismatched InGaP/InP (100) with epitaxial lateral overgrowth
Higuchi Kenichi\Fujita Takeshi\Toba Kenji\Takahashi N. Shinichi
Phys. Status Solidi C, Vol: 3, No: 8 , published: 24 November 2007
Сильная спиновая поляризация электронов в диодной структуре на основе InAs
Терентьев Я.В./Люблинская О.Г./Усикова А.А./и др.
Физ. и техн. полупроводников , Vol: 41, No: 11 , published: 21 November 2007
Получение квантовых точек методом селективной интердиффузии в CdTe/CdMgTe-квантовых ямах
Зайцев С.В./Вельш М.К./Форхел А./Бахер Г.
Физ. и техн. полупроводников , Vol: 41, No: 11 , published: 21 November 2007
Структуры с квантовыми точками CdSe в матрице ZnSe, выращенные методом молекулярно-пучковой эпитаксии с использованием субмонослоя-стрессора CdTe
Седова И.В./Люблинская О.Г./Сорокин С.В./и др.
Физ. и техн. полупроводников , Vol: 41, No: 11 , published: 21 November 2007
Влияние температуры роста на фотолюминесценцию самоформирующихся островков Ge(Si), заключенных между напряженными слоями Si
Шалеев М.В./Новиков А.В./Яблонский А.Н./и др.
Физ. и техн. полупроводников , Vol: 41, No: 11 , published: 21 November 2007
Электролюминесценция ионов эрбия в кремниевых диодных структурах p{++}/n{+}/n-Si:Er/n{++}
Кузнецов В.П./Ремизов Д.Ю./Шмагин В.Б./и др.
Физ. и техн. полупроводников , Vol: 41, No: 11 , published: 21 November 2007
Катодолюминесценция слабых растворов GaN[x]As[1_-x] (x _< 0.03)
Брунков П.Н./Гуткин А.А./Заморянская М.В./Хрусталев В.С.
Физ. и техн. полупроводников , Vol: 41, No: 11 , published: 21 November 2007
Demonstration of 1.51 _mm InAs/InP(311)B quantum dot single-mode laser operating under continuous wave
Moreau G./Merghem K./Martinez A./et al.
IET Optoelectron, Vol: 1, No: 6 , published: 20 November 2007
Calculation of quantum-dot blinking using the Gillespie Monte Carlo algorithm
Brown M.R./Rees P./Wilks S./et al.
IET Optoelectron, Vol: 1, No: 6 , published: 20 November 2007
Резонансно-оптическое детектирование ядерной намагниченности в наноструктуре Si/CaF[2]
Данилюк А.Л.\Борисенко В.Е.
Ж. прикл. спектроскопии, Vol: 72, No: 5 , published: 19 November 2007
Phonon-assisted photoluminescence in a spherical nanocrystal
Fai L.C.\Teboul V.\Monteil A.\Maabou S.
Ж. прикл. спектроскопии, Vol: 72, No: 5 , published: 19 November 2007
Growth and optical properties of ZnO films and quantum wells
Zhang Baoping\Kang Junyong\Yu Jinzhong\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 4 , published: 19 November 2007
GaAsSb/InAlAs PA DHIBTs grown by production MBE
Zhu H.J.\Kuo J.M.\Pinsukajana P.\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 4 , published: 19 November 2007
Nonlinear current-voltage characteristics and electroluminescence of cBN crystal
Dou Qingping\Chen Zhanguo\Jia Gang\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 4 , published: 19 November 2007
Energy transfer probability between host and guest in doped organic electrophosphorescent devices
Li Hongjian\Oujang Jun\Dai Guozhang\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 4 , published: 19 November 2007
Интерпретация видимой фотолюминесценции взвешенных в этаноле разновеликих наночастиц кремния
Оглуздин В.Е.
Физ. и техн. полупроводников , Vol: 39, No: 8 , published: 18 November 2007
Влияние эрбия и кислорода на интенсивность фотолюминесценции эрбия и состав пленок a-SiO[x]:H, полученных магнетронным распылением на постоянном токе
Ундалов Ю.К.\Теруков Е.И.\Гусев О.Б.\Кудоярова В.Х.
Физ. и техн. полупроводников , Vol: 39, No: 8 , published: 18 November 2007
Люминесценция и электрические свойства пленок CdS, легированных калием и натрием
Клюев В.Г.\Майорова Т.Л.\Наумов А.В.\Семенов В.Н.
Ж. прикл. спектроскопии, Vol: 72, No: 4 , published: 18 November 2007
Atmosphere of atomic oxygen on the photoluminescence of ZnO layers implanted by As and N
Rogozin I.V.
Укр. фiз. ж., Vol: 50, No: 12 , published: 18 November 2007
Оптические свойства монокристаллов CuIn5Se8
Боднарь И.В.
Физ. и техн. полупроводников , Vol: 41, No: 1 , published: 17 November 2007
Латеральное упорядочение квантовых точек и нитей в многослойных структурах (In,Ga)As/GaAs (100)
Стрельчук В.В.\Литвин П.М.\Коломыс А.Ф.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 1 , published: 17 November 2007
Центры люминесценции в кубическом нитриде бора
Шишонок Е.М.
Ж. прикл. спектроскопии, Vol: 74, No: 2 , published: 17 November 2007
Хлоридная газофазная эпитаксия GaN на Si: структурные и люминесцентные характеристики слоев
Бессолов В.Н.\Ботнарюк В.М.\Жиляев Ю.В.\и др.
Письма в ЖТФ, Vol: 32, No: 15 , published: 17 November 2007
Mechanisms of enhancement of light emission in nanostructures of ~I~I_-~V~I compounds doped with manganese
Godlewski M.\Yatsunenko S.\Ivanov V.Y.\et al.
Физ. низ. температур, Vol: 33, No: 2-3 , published: 17 November 2007
Примесное поглощение и люминесценция кристаллов CuGaSe2
Пономарева И.П.\Серов А.Ю.\Боднарь И.В.
Физ. тверд. тела, Vol: 49, No: 1 , published: 17 November 2007
Фотолюминесценция в германии с квазиравновесной дислокационной структурой
Шевченко С.А.\Терещенко А.Н.
Физ. тверд. тела, Vol: 49, No: 1 , published: 17 November 2007
Образование дефектов в тонких пленках полупроводникового соединения Cu(In,Ga)Se[2] при облучении протонами
Мудрый А.В.\Иванюкович А.В.\Якушев М.В.\и др.
Ж. прикл. спектроскопии, Vol: 73, No: 6 , published: 17 November 2007
Квантовая эффективность и формирование линии излучения в светодиодных структурах с квантовыми ямами InGaN/GaN
Бочкарева Н.И.\Тархин Д.В.\Ребане Ю.Т.\и др.
Физ. и техн. полупроводников , Vol: 41, No: 1 , published: 17 November 2007
Enhancement of drain current in planar MOSFETs by dopant profile engineering using nonmelt laser spike annealing
Shima A./Mine T./Torii K./Hiraiwa A.
IEEE Trans. Electron Devices , Vol: 54, No: 11 , published: 15 November 2007
The influence of parasitic effects on injection-leveldependent lifetime data
Chen F.W./Cotter J.E./Abbot M.D./et al.
IEEE Trans. Electron Devices , Vol: 54, No: 11 , published: 15 November 2007
Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells
Hsu H.P.\Korotcov A.\Huang Y.S.\et al.
Phys. Status Solidi A, Vol: 204, No: 2 , published: 12 November 2007
Contactless modulated reflectivity of quasi 0D self-assembled semiconductor structures
S~8ek G.\Kudrawiec R.\Motyka M.\et al.
Phys. Status Solidi A, Vol: 204, No: 2 , published: 12 November 2007
Photolimenescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
Hsu H.P.\Sitarek P.\Huang Y.S.\et al.
Phys. Status Solidi A, Vol: 204, No: 2 , published: 12 November 2007
Synthesis of localized 2D-layers of silicon nanoparticles embedded in a SiO[2] layer by a stencil-masked ultra-low energy ion implantation process
Dumas C.\Grisolia J.\Ressier L.\et al.
Phys. Status Solidi A, Vol: 204, No: 2 , published: 12 November 2007
Spin-controlled LEDs and VCSELs (invited)
H~:ovel S.\Gerhardt N.C.\Brenner C.\et al.
Phys. Status Solidi A, Vol: 204, No: 2 , published: 12 November 2007
Symmetry of trion states in modulation-doped CdTe/CdMgTe nanostructures under a high magnetic field
Tronc P.\Andronikov D.\Kochereshko V.\et al.
Phys. Status Solidi B, Vol: 244, No: 2 , published: 12 November 2007
Strong orange luminescence from a novel hexagonal ZnO nanosheet film grown on alumium substrate by a simple wet-chemical approach
Wang Ning\Lin Hong\Li Jianbao\et al.
J. Am. Ceram. Soc. , Vol: 90, No: 2 , published: 12 November 2007
The influence of nickel dopant on the microstructure and optical properties of SnO[2] nano-powders
Liu Chun-Ming\Fang Li-Mei\Zu Xiao-Tao\Zhou Wei-Lie
Chin. Phys., Vol: 16, No: 1 , published: 12 November 2007
Influence of annealing temperature on luminescence of _b-FeSi[2] particles embedded in silicon
Li Cheng\Lai Hongkai\Chen Songyan
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 1 , published: 12 November 2007
Investigation of ICP etching damage of InAsP InP strained multiple quantum wells
Cao Meng\Wu Huizhen\Lao Yanfeng\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 1 , published: 12 November 2007
780 nm InGaAsP/InGaP/AlGaAs high power semiconductor laser
Cao Yulian\Lian Peng\Wang Qing\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 9 , published: 12 November 2007
Photoacoustic studies on optical and thermal properties of p-type and n-type nanostructured porous silicon for (100) and (111) orientations
Srinivasan R.\Jayachandran M.\Ramachandran K.
Cryst. Res. Technol., Vol: 42, No: 3 , published: 11 November 2007
Blue luminescent center and ultraviolet-emission dependence of ZnO films prepared by pulsed laser deposition
Wei Xianqi\Man Baoyuan\Xue Chengshan\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 11 , published: 10 November 2007
Optical cavity properties of metal mirror microcavities with InAsSb quantum dots (brief communication)
Ueta Akio\Gozu Sin-ichiro\Akahane Kouichi\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 11 , published: 10 November 2007
Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to In[x]Ga[1_-x]N/GaN multiple quantum wells
Sasaki Akio\Shibakawa Shin-ichiro\Kawakami Yoichi\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 11 , published: 10 November 2007
Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially ovegrown a-plane GaN (biref communication)
Chakraborty Arpan\Kim Kwang Choong\Wu Feng\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 11 , published: 10 November 2007
Photoluminescence study of p-type ZnO:Sb prepared by thermal oxidation of the Zn-Sb starting material
E. Przeździecka, E. Kamińska, I. Pasternak, A. Piotrowska, and J. Kossut
Phys. Rev. B: Condens. Matter, Vol: 76, No: 19 , published: 07 November 2007
GaN-based indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
Kuo C.H./Chang S.J./Kuan H.
IET Optoelectron, Vol: 1, No: 3 , published: 07 November 2007
Властивостi епiтаксiйних шарiв InP, легованих рiдкiсноземельними елементами та алюмiнiем
Круковський С.I.\Стахiра Й.М.\Фотiй В.Д.
Укр. фiз. ж., Vol: 51, No: 1 , published: 06 November 2007
Phonon-Induced Efficient Transfer of Spin-Polarized Excitons in Diluted Magnetic Semiconductor Double Quantum Wells
Jiho Park, Kazuya Saito, Izuru Souma, Yasuo Oka, and Akihiro Murayama<
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 11 , published: 06 November 2007
Luminescence Mechanism of SiOx Films Grown by Atmospheric-Pressure Halide Chemical Vapor Deposition
Yu-Hsiang Huang, Zhen-Yu Li, Meng-Chu Chen, Chien-Te Ku, Ying-Ru Chen, Wu-Yih Uen, Chia-Hung Lin, Shan-Ming Lan, Tsun-Neng Yang, and Ji-Lin Shen<
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 11 , published: 06 November 2007
Comparison of Brightness of Emitting Semiconductor Nanocrystals with That of Rare-Earth Phosphor
Norio Murase, Chunliang Li, Ping Yang, and Masanori Ando<
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 11 , published: 06 November 2007
Влияние параметров процесса МОГФЭ на свойства эпитаксиальных пленок GaInAsN
Данильцев В.М.\Гапонова Д.М.\Дроздов М.Н.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Особенности эпитаксиального наращивания GaN при пониженном давлении в реакторе МОГФЭ
Хрыкин О.И.\Бутин А.В.\Гапонова Д.М.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Долговременная кинетика фотолюминесценции квантовых точек InAs/AlAs в магнитном поле
Шамирзаев Т.С.\Гилинский А.М.\Бакаров А.К.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Электролюминесцентные свойства гетероструктур с квантовыми ямами GaInNAs
Мурель А.В.\Данильцев В.М.\Дроздов Ю.Н.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Влияние электрохимической модификации тонкого покровного слоя Ga(In)As на энергетический спектр квантовых точек InAs/GaAs
Карпович И.А.\Здоровейщев А.В.\Тихов С.В.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Оптические явления в гетероструктурах InAs/GaAs с легированными квантовыми точками и искусственными молекулами
Воробьев Л.Е.\Паневич В.Ю.\Федосов Н.К.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Терагерцовая люминесценция гетероструктур на основе GaAs с квантовыми ямами при оптическом возбуждении доноров
Бекин Н.А.\Жукавин Р.Х.\Ковалевский К.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Эффективная фотолюминесценция ближнего инфракрасного диапазона в слоях нитрида галлия, легированного мышьяком
Андрианова А.В.\Новиков С.В.\Журавлев И.С.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Свойства структур на основе GaAs, легированного Mn из лазерной плазмы в процессе МОС-гидридной эпитаксии
Васильева Ю.В.\Данилов Ю.А.\Ершов Ант.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Гетероструктуры InGaAs/GaAs с квантовыми точками для инфракрасных фотоприемников диапазона 3_-5 мкм
Антонов А.В.\Гапонова Д.М.\Данильцев В.М.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Резонансное комбинационное рассеяние света и атомно-силовая микроскопия многослойных наноструктур InGaAs/GaAs с квантовыми точками
Валах М.Я.\Стрельчук В.В.\Коломыс А.Ф.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Фотолюминесценция и комбинационное рассеяние света в пористом GaSb, сформированном ионной имплантацией
Данилов Ю.А.\Бирюков А.А.\Gon~Ecalves J.L.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Кинетика фотолюминесценции вюрцитных GaN квантовых точек в матрице AlN
Ри Д.Д.\Мансуров В.Г.\Никитин А.Ю.\и др.
Письма в ЖЭТФ, Vol: 81, No: 1-2 , published: 05 November 2007
Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN/GaN single quantum well structure
Nicholas P. Hylton, Philip Dawson, Menno J. Kappers, Clifford McAleese, and Colin J. Humphreys
Phys. Rev. B: Condens. Matter, Vol: 76, No: 20 , published: 05 November 2007
Влияние промежуточного окисного слоя в гетероструктурах металл_-квантово-размерный полупроводник In(Ga)As/GaAs на эффективность электролюминесценции
Байдусь Н.В.\Демина П.Б.\Дорохин М.В.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 1 , published: 05 November 2007
Инфракрасное тушение электролюминесценции тонкопленочных электролюминесцентных структур на основе ZnS:Mn
Гурин Н.Т.\Рябов Д.В.
Ж. техн. физ., Vol: 75, No: 1 , published: 05 November 2007
Mechanisms of radiative and nonradiative recombination in ZnSe:Ce and ZnSe:Fe
Godlewski M.\Surma M.\Ivanov V.Yu.\Surkova T.P.
Физ. низ. температур, Vol: 30, No: 11 , published: 04 November 2007
Рентгенолюминесценция карбида кремния
Бабаянц Г.И.\Бабаянц К.Г.\Попенко В.А.
Ж. техн. физ., Vol: 74, No: 12 , published: 04 November 2007
High-Detectivity Nitride-Based MSM Photodetectors on InGaN–GaN Multiquantum Well With the Unactivated Mg-Doped GaN Layer
Ping-Chuan Chang; Yu, C.L.; Chang, S.J.; Lee, K.H.; Liu, C.H.; Wu, S.L.
IEEE J. Quantum Electron. , Vol: 43, No: 11 , published: 01 November 2007
Optical properties of InN films grown by MCVD
Kong Jieying/Zhang Rong/Liu Bin/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 11 , published: 30 October 2007
Growth of AlGaAs on GaAs (110) surface by molecular beam epitaxy
Liu Linsheng/Wang Wenxin/Liu Su/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 9 , published: 30 October 2007
Low temperature synthesis and optical properties of ZnO nanowires
Chang Peng/Liu Su/Chen Rongbo/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 10 , published: 30 October 2007
Interlayer excitons: experiment and theory
Lisitsa M.P.\Motsnyi F.V.\Zinets O.S.
Укр. фiз. ж., Vol: 48, No: 8 , published: 29 October 2007
Использование конфлюентного анализа для оценки влияния электрофизических параметров прямозонных полупроводниковых материалов на результаты интервального оценивания зависимости интенсивности катодолюминесценции от энергии электронов пучка. Результаты математического моделирования
Гагарин Ю.Е./Лапшинова Е.Н./Петров В.И./Степович М.А.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 10 , published: 29 October 2007
Формирование квантовых точек при докритической толщине осаждения InAs на GaAs(100)
Тонких А.А.\Цырлин Г.Э.\Дубровский В.Г.\и др.
Письма в ЖТФ, Vol: 29, No: 16 , published: 27 October 2007
Characteristics of Polarized Electroluminescence from m-plane InGaN-based Light Emitting Diodes
Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, and Hiroaki Ohta
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 41-44 , published: 26 October 2007
Особенности перестройки электронного спектра двухъямной гетероструктуры GaAs/AlGaAs с переменной размерностью электронных состояний во внешнем электрическом поле
Алещенко Ю.А.\Жуков А.Е.\Капаев В.В.\и др.
Ж. эксперим. и теор. физ., Vol: 125, No: 4 , published: 25 October 2007
Влияние примесей на излучательную рекомбинацию через центры EL2 в монокристаллах арсенида галлия
Литвинова М.Б.
Физ. и техн. полупроводников , Vol: 38, No: 1 , published: 25 October 2007
Влияние примеси золота на фотолюминесценцию и фотоэдс пористого кремния
Венгер Е.Ф.\Кириллова С.И.\Кизяк И.М.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 1 , published: 25 October 2007
Стабилизация фотолюминесцентных свойств пористого кремния
Сресели О.М.\Горячев Д.Н.\Беляков Л.В.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 1 , published: 25 October 2007
Температурные исследования фотолюминесценции модулированно-легированных структур AlGaAs/GaAs с квантовыми ямами
Яременко Н.Г.\Галиев Г.Б.\Карачевцева М.В.\и др.
Радиотехн. и электрон. (Россия), Vol: 50, No: 9 , published: 25 October 2007
Ring-Shaped Spatial Photoluminescence Profiles in Two-Dimensional Semiconductors
Takeshi J. Inagaki, Aya Miyake, and Masaki Aihara
J. Phys. Soc. Jpn., Vol: 76, No: 11 , published: 25 October 2007
Зеленая полоса люминесценции пленок оксида цинка, легированных медью в процессе термической диффузии
Аливов Я.И.\Чукичев М.В.\Никитенко В.А.
Физ. и техн. полупроводников , Vol: 38, No: 1 , published: 25 October 2007
Преобразование центров люминесценции CVD-ZnS при газостатировании
Морозова Н.К.\Каретников И.А.\Плотниченко В.Г.\и др.
Физ. и техн. полупроводников , Vol: 38, No: 1 , published: 25 October 2007
Anomalous Stokes shift in CdSe nanocrystals
T. J. Liptay, L. F. Marshall, P. S. Rao, R. J. Ram, and M. G. Bawendi
Phys. Rev. B: Condens. Matter, Vol: 76, No: 15 , published: 22 October 2007
Fabrication and characterization of microdisk resonators with In(Ga)As/GaAs quantum dots
Rastelli A.\Ulgaq A.\Deneke Ch.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
1.3_-1.6 _mm broadband polarization-independent luminescence by columnar InAs quantum dots on InP(001)
Kawaguchi Kenichi\Ekawa Mitsuru\Yasuoka Nami\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Carrier relaxation in multi-stacked InAs/GaAs quantum dots
Jang D.-J.\Lu S.-K.\Lee M.-E.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Morphology and photoluminescence of seeded three-dimensional InAs/GaAs(001) quantum-dot crystals
Kiravittaya S.\Rastelli A.\Schmidt O.G.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 _mm
Chauvin N.\Baira M.\Bru-Chevallier C.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Controlling spontaneous emission from quantum dots using photonic crystal microcavities
Gevaux D.G.\Atkinson P.\Anderson D.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
CdSe/ZnSe quantum dots coupled to modes of monolithic ~I~I_-~V~I pillar microcavities: tunability and Purcell effect
Lohmeyer H.\Kruse C.\Sebald K.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
InAs/InP quantum dot photonic crystal microcavities
Fr~1ed~1erick Simon\Dalacu Dan\Poole Philip J.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Radiation pressure induced splitting of resonant in a nanocrystal-coated microcavity
Gerlach M.\Rakovich Yu.P.\Donegan J.F.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Time resolved measurement on low-density single quantum dots at 1300 nm
Zinoni C.\Alloing B.\Monat C.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Electron spin coherence in singly charged (In,Ga)As/GaAs quantum dots
Greilich A.\Oulton R.\Zhukov E.A.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Fock-Darwin spectrum of a single InAs/GaAs quantum dot
Babinski A.\Potemski M.\Raymond S.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Charge-controlled nuclear polarization of a single InAs/GaAs quantum dot under optical pumping
Eble Beno~7it\Krebs Olivier\Lema~7ire Aristide\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Single photon correlation measurements in a study of excitation process of individual CdTe/ZnTe quantum dots
Suffeczy~1nski J.\Kazimierczuk T.\Goryca M.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Controlled charging of the same single quantum dot from +6e to _-e: emission, shell filling and configuration interactions
Ediger M.\Karrai K.\Badolato A.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
1.3 _mm emission from InAs/GaAs quantum dots
Kuldov~1a K.\K~3r~1apek V.\Hospodkov~1a A.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Optical characteristics of lowly strained GaInAs quantum dots
L~:offler A.\Poloczek P.\S~8ek G.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Emission lineshape in strain free quantum dot
Poliani E.\Bonfanti M.\Sanguinetti S.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Optical fine structure of ~I~I_-~V nanocrystals: the role of d orbitals in a tight-binding approach
D~1iaz J.G.\Bryant G.W.\Jask~1olski W.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots
Schulz S.\Baer N.\Schumacher S.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Photoluminescence and photoluminescence excitation spectroscopy of CdSe/ZnS core-shell free standing nanocrystals in the ultraviolet spectral range
Podhorodecki A.\Misiewicz J.\Nauka K.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
1.5 _mm luminescence from InAs/Ga[x]In[1_-x]N[y]As[1_-y] quantum dots grown on GaAs substrate
Richter M.\Hugues M.\Damilano B.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Photoreflectance investigations of energy level structure of InAs quantum dashes embedded in InGaAs/InGaAlAs quantum well grown on InP substrare
Rudno-Rudzi~1nski W.\Kudrawiec R.\S~8ek G.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Temperature dependence of the photoluminescence of single GaAs/AlGaAs concentric quantum ring structure
Bonfanti M.\Sanguinetti S.\Mano T.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Recombination lifetime of single GaAs/AlGaAs quantum dots
Abbarchi M.\Gurioli M.\Sanguinetti S.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Optical properties of single InGaN quantum dots up to 150 K
Sebald K.\Lohmeyer H.\Gutowski J.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Power dependent photoluminescence of lateral quantum dot molecules: indication of extended electron states
V. Lippen T.\N~:otzel R.\Eijkemans T.J.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Femtosecond photoluminescence spectroscopy of silicon nanocrystals
Troj~1anek F.\Neudert K.\~3Zidek K.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Evidence for excitonic polarons in InAs/GaAs quantum dots
Preisler V.\Grange T.\Ferreira R.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Stark spectroscopy of Coulomb interactions in individual InAs/GaAs self-assembled quantum dots
Kowalik K.\Krebs O.\Senellart P.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Valence band mixing in charged self-assembled quantum dots
L~1eger Y.\Besombes L.\Maingault L.\Mariette H.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Tuning the magnetic properties of ZnCdSe/ZnSe quantum dots by thermal annealing
Margapoti E.\Worschech L.\Mahapatra S.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Shape and size effects on multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate
Chauvin N.\Bremond G.\Bru-Chevallier C.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Biexcitonic complexes and the decay dynamics of trion and exciton in a single CdSe quantum dot
Koch M.\Kheng K.\Robin I.C.\Andr~1e R.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 _mm photoluminescence
Dor~1e F.\Cornet C.\Caroff P.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Narrowing of ground energy level distribution in an array of InAs/AlAs QDs by post grown annealing
Shamirzaev T.S.\Kalagin A.K.\Toropov A.I.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Investigation of InAs quantum dot growth for electrical spin injection devices
Passow T.\Li S.\Litvinov D.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Temperature dependence of photoluminescence from CdS nanoclusters formed in the matrix of Langmuir-Blodgett film
Bagaev E.A.\Zhuravlev K.S.\Sveshnikova L.L.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Temperature dependence of photoluminescence of CdSe/ZnSe quantum dots grown on GaAs and Si/Ge virtual substrates
Onishchenko Evgeny E.\Bagaev Victor S.\Kazakov Igor P.\Rzaev Murvetali M.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
High efficiency photoluminescence from silicon nanocrystals prepared by plasma synthesis and organic surface passivation
Mangolini L.\Jurebergs D.\Rogojina E.\Kortshagen U.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5 _mm
Hugues M.\Richter M.\Damilano B.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
Zevos M.\Xenogianni C.\Deligeorgis G.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
InAs(Sb) quantum dots grown on GaAs by MBE
Sallet V.\Patriarche G.\Mauguin O.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Quantum dots as fluorescent bio-labels in cancer diagnostic (invited)
Farias Patr~1icia M.A.\Santos Beate S.\Menezes Frederico D.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Nonlinear optical microscopy of a single self-assembled InGaAs quantum dot
Wesseli M.\Ruppert C.\Trumm S.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Emission at 1.55 _mm from InAs/GaAs quantum dots grown by metal ogranic chemical vapor deposition via antimony incorporation
Guimard Denis\Tsukamoto Shiro\Nishioka Masao\Arakawa Yasuhiko
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Luminescence and photo-excitation properties of laser heterostructures with CdSe/ZnSe quantum dots
Lyublinskaya O.G.\Sedova I.V.\Sorokin S.V.\et al.
Phys. Status Solidi C, Vol: 3, No: 11 , published: 21 October 2007
Интегрируя магнетизм в полупроводниковую электронику
Захарченя Б.П.\Коренев В.Л.
Успехи физ. наук, Vol: 175, No: 6 , published: 19 October 2007
Фотолюминесценция аморфных многослойных структур _a-C:H/_a-Si:H
Бабаев А.А.\Камилов И.К.\Султанов С.Б.\Асхабов А.М.
Физ. и химия стекла, Vol: 31, No: 3 , published: 19 October 2007
Growth of GaN-based magnetic semiconductors and their properties
Asahi H.
Nihon oyo jiki gakkaishi = J. Magn. Soc. Jap., Vol: 29, No: 9 , published: 17 October 2007
Фотолюминесценция монокристаллов InSe и GaSe, легированных редкоземельными элементами
Абдинов А.Ш.\Бабаева Р.Ф.\Радаев Р.М.\Гасанов Г.А.
Неорган. матер., Vol: 40, No: 6 , published: 16 October 2007
Влияние вакансионного состава монокристаллов арсенида галлия на фототушение излучения через дефекты EL2
Литвинова М.Б.
Кристаллография, Vol: 50, No: 4 , published: 16 October 2007
Обращение волнового фронта на поверхности оптически возбужденных пленок CuI
Грузинцев А.Н.
Письма в ЖЭТФ, Vol: 78, No: 3-4 , published: 15 October 2007
Кинетика импульсной катодолюминесценции
Соломонов В.И.
Оптика и спектроскопия, Vol: 95, No: 2 , published: 15 October 2007
Низкотемпературные нестабильности электрических свойств полуизолирующих кристаллов Cd[0.96]Zn[0.04]Te:Cl
Савицкий А.В.\Парфенюк О.А.\Илащук М.И.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 7 , published: 15 October 2007
Параметры вюрцитных кристаллов нитрида галлия, легированных тулием
Криволапчук В.В.\Кожанова Ю.В.\Лундин В.В.\и др.
Физ. тверд. тела, Vol: 47, No: 7 , published: 15 October 2007
Роль встроенных электрических полей в формировании излучения квантовых ям InGaN/GaN
Криволапчук В.В.\Лундин В.В.\Мездрогина М.М.
Физ. тверд. тела, Vol: 47, No: 7 , published: 15 October 2007
Люминесценция _l=6_-9 мкм многослойных структур на основе InAsSb
Зотова Н.В.\Карандашев С.А.\Матвеев Б.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 2 , published: 15 October 2007
Спонтанная и стимулированная люминесценция столбчатых наностержней ZnO различной длины
Грузинцев А.Н.\Редькин А.Н.\Маковей З.И.\Бартхоу К.
Неорган. матер., Vol: 43, No: 10 , published: 15 October 2007
Влияние состояний на границах раздела на емкость и эффективность электролюминесценции InGaN/GaN-светодиодов
Бочкарева Н.И.\Жирнов Е.А.\Ефремов А.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 7 , published: 15 October 2007
Кинетика электрон-ионных процессов в твердых растворах на основе теллурида кадмия в системе CdTe_-CdI[2]
Гапанович М.В.\Радычев Н.А.\Рабенок Е.В.\и др.
Неорган. матер., Vol: 43, No: 10 , published: 15 October 2007
Non-Markovian gain and luminescence of an InGaN_-AlInGaN quantum-well with many body effects
Ahn Doyeol\Park Seoung-Hwan\Park Eun-Hyun\Yoo Tae-Kyung
IEEE J. Quantum Electron. , Vol: 41, No: 10 , published: 14 October 2007
Exciton_-polariton transition induced by elastic exciton_-exciton collisions in ultra-high quality AlGaAs alloys
Shamirzaev T.S.\Toropov A.I.\Bakarov A.K.\et al.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
Исследования физических явлений в полупроводниковых наноструктурах с использованием планарно-неоднородных слоев. Фотолюминесценция структур с электронными _d-легированными слоями
Хабаров Ю.В.\Капаев В.В.\Петров В.А.\Галиев Г.Б.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
Исследование латерального транспорта носителей в структурах с квантовыми точками InGaN в активной области
Сизов В.С.\Сизов Д.С.\Михайловский Г.А.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
Влияние разориентации подложки GaAs на свойства квантовых точек InAs, выращенных методом МПЭ при низких температурах
Тонких А.А.\Цырлин Г.Э.\Поляков Н.К.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
О влиянии процесса окисления на эффективность и спектр люминесценции пористого кремния
Булах БМ.\Корсунская Н.Е.\Хоменкова Л.Ю.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
Электро- и фотолюминесценция соединений на основе легированного сульфида цинка в диапазоне 500_-750 нм
Бачериков Ю.Ю.\Кицюк Н.В.\Оптасюк С.В.\и др.
Ж. прикл. спектроскопии, Vol: 72, No: 1 , published: 12 October 2007
Алмазоподобные и графитоподобные состояния углерода в короткопериодных сверхрешетках
Заварицкая Т.Н.\Караванский В.А.\Мельник Н.Н.\Пудонин Ф.А.
Письма в ЖЭТФ, Vol: 79, No: 5-6 , published: 12 October 2007
Флуктуационная теория фотолюминесценции пористого кремния
Бондарев В.Н.\Пизица П.В.\Зеленин С.В.
Физ. тверд. тела, Vol: 46, No: 3 , published: 12 October 2007
Влияние джоулева разогрева на квантовую эффективность и выбор теплового режима мощных голубых InGaN/GaN светодиодов
Ефремов А.А.\Бочкарева Н.И.\Горбунов Р.И.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
Вертикально-излучающие лазеры на основе массивов субмонослойных квантовых точек InGaAs
Блохин С.А.\Малеев Н.А.\Кузьменков А.Г.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 5 , published: 12 October 2007
Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations
Timur S. Shamirzaev, Alexanser M. Gilinsky, Alexanser K. Kalagin, Alexey V. Nenashev, and Konstantin S. Zhuravlev
Phys. Rev. B: Condens. Matter, Vol: 76, No: 15 , published: 11 October 2007
Spontaneous Emission Rate of Si Nanocrystals on Thin Au Film
Toshihiro Nakamura, Minoru Fujii, Satoru Miura, Masaki Inui, and Shinji Hayashi
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 10A , published: 09 October 2007
Impurity-Free Vacancy Diffusion of InGaAsP/InGaAsP Multiple Quantum Well Structures Using SiH4-Dependent Dielectric Cappings
Jae Su Yu and Yong Tak Lee
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 10A , published: 09 October 2007
Characterization and Photoluminescence of CdS Nanoparticles Synthesized in Diethyl Ether–Sodium Dioctylsulfosuccinate–Water Microemulsion System
Kwanhwi Park, Hong Jeong Yu, Hyun Uk Kang, Sangsig Kim, and Sung Hyun Kim
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 10A , published: 09 October 2007
Photoluminescence from Si nanocrystals embedded in In doped SiO[2]
Matsumoto Kimihisa\Fujii Minoru\Hayashi Shinji
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 12-16 , published: 08 October 2007
Preparation of GaN crystals by heating a Li[3]N-added Ga melt in Na vapor and their photoluminescence
Yamada Takahiro\Yamane Hisanori\Ohta Takaaki\et al.
Cryst. Res. Technol., Vol: 42, No: 1 , published: 04 October 2007
Electronic and optical properties of dilute nitrogen quantum dots
Tomi~1c S.
IEE Proc. Optoelectron., Vol: 153, No: 6 , published: 04 October 2007
Germanium quantum dots formed by oxidation of SiGe alloys
Liu Shi-Rong\Huang Wei-Qi\Qin Zhao-Jian
Acta phys. sin., Vol: 55, No: 5 , published: 03 October 2007
The micro-photoluminescence and micro-Raman study of Zn[1_-x]Cd[x]Se quantum islands (dots) in CdSe/ZnSe heterostructure
Wang Fang-Zhen\Chen Zhang-Hai\Bai Li-Hui\et al.
Acta phys. sin., Vol: 55, No: 5 , published: 03 October 2007
Study of photoluminescence and optical absorption edge in semiconducting crystals of _g[1]-(Ga[x]In[1_-x])[2]Se[2] solid solutions
Kranj~3cec M.\Studenyak I.P.\Azhniuk Yu.M.\Perechynskyi S.I.
Укр. фiз. ж., Vol: 50, No: 11 , published: 01 October 2007
Manipulating luminescence in semiconductor nanostructures via field-effect-tuneable potentials
Kotthaus J~:org P.
Phys. Status Solidi B, Vol: 243, No: 14 , published: 01 October 2007
Ultrafast emission under two-photon excitation of biexcitons in CuCl quantum dots
Miyajima K.\Kagotani Y.\Saito S.\et al.
Phys. Status Solidi B, Vol: 243, No: 14 , published: 01 October 2007
High-density selective excitations effect on excitons in semimagnetic semiconductor CdMnTe
Katayama K.\Miyajima K.\Ashida M.\Itoh T.
Phys. Status Solidi B, Vol: 243, No: 14 , published: 01 October 2007
Photoluminescence from excitons at the mini-Brillouin-zone boundary in a GaAs/AlAs superlattice
Hasegawa T.\Nakayama M.
Phys. Status Solidi B, Vol: 243, No: 14 , published: 01 October 2007
Exciton luminescence of boron nitride nanotubes and nano-arches
Berzina B.\Trinkler L.\Korsak V.\et al.
Phys. Status Solidi B, Vol: 243, No: 14 , published: 01 October 2007
Role of nitrogen precursor supplies on InAs quantum dot surfaces in their emission wavelengths
Suemune Ikuo\Sasikala Ganapathy\Kumano Hidekazu\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 20-23 , published: 28 September 2007
Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition
Suzuki Ryochiro\Miyamoto Tomoyuki\Matsuura Tetsuya\Koyama Fumio
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 20-23 , published: 28 September 2007
Effect of threading edge dislocations on the photoluminescence spectra for n-type wurtzite GaN
Jeong Ho You and H. T. Johnson
Phys. Rev. B: Condens. Matter, Vol: 76, No: 11 , published: 28 September 2007
Nonequilibrium carrier dynamics in self-assembled InGaAs quantum dots (invited)
Wesseli M.\Ruppert C.\Trumm S.\et al.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Strong and weak coupling of single quantum dot excitons in pillar microcavities
Reitzenstein S.\Hofmann C.\L~:offler A.\et al.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Theory of quantum dot luminescence from acoustically excited intersubband transitions
Milde F.\Ahn K.J.\Knorr A.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Electron spin dephasing in n-doped CdTe/(Cd, Mg)Te quantum wells
Bratschitsch R.\Chen Z.\Cundiff S.T.\et al.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Zero dimensional excitor-polaritons (invited)
Baas A.\El Da~:if O.\Richard M.\et al.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Exciton dynamics in the presence of an electron gas in GaAs quantum wells
Bajoni D.\Senellart P.\Perrin M.\et al.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Two-photon photoluminescence and exciton binding energies in single-walled carbon nanotubes (invited)
Romraenke R.\Maultzsch J.\Reich S.\et al.
Phys. Status Solidi B, Vol: 243, No: 10 , published: 27 September 2007
Investigation of high hole concentration Mg-doped InGaN epilayer
Liu Nai-Xin\Wang Huai-Bing\Liu Jian-Ping\et al.
Acta phys. sin., Vol: 55, No: 9 , published: 27 September 2007
Влияние механических напряжений и температуры на фотолюминесценцию фуллерита C[60] в низкотемпературной фазе
Авдеенко А.\Корбенко Н.\Горобченко В.\и др.
Физ. низ. температур, Vol: 30, No: 3 , published: 27 September 2007
ZnSe-based organic-inorganic heterostructure diodes
Jiang Yan\Yang Sheng-Yi\Zhang Xiu-Long\et al.
Acta phys. sin., Vol: 55, No: 9 , published: 27 September 2007
Polarization dependence of absorption and luminescence spectra of a 1.5-dihydroxyanthraquinone single crystal
Namsrai Nasanbat\Yoshinari Takehisa\Itoh Hiroki\et al.
J. Phys. Soc. Jpn., Vol: 75, No: 4 , published: 25 September 2007
Фотолюминесценция ионов Er{3+} в слоях квазиупорядоченных кремниевых нанокристаллов в матрице диоксида кремния
Кашкаров П.К.\Лисаченко М.Г.\Шалыгина О.А.\и др.
Ж. эксперим. и теор. физ., Vol: 124, No: 6 , published: 25 September 2007
Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution
D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, and T. Tiedje
Phys. Rev. B: Condens. Matter, Vol: 76, No: 12 , published: 25 September 2007
Низкопороговые лазеры на основе InGaAsN для волоконно-оптических линий связи
Устинов В.М.\Егоров А.Ю.\Ковш А.Р.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Долговременная динамика экситонной фотолюминесценции InAs/AlAs квантовых точек
Шамирзаев Т.С.\Гилинский А.М.\Бакаров А.К.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Форма спектров сверхизлучения квантовых ям при разных уровнях возбуждения
Климовская А.И.\Пикарук О.А.\Дрига Ю.А.\Гуле Е.Г.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Спектроскопия временного разрешения гетероструктур InGaAs/AlGaAs с асимметричными воронкообразными квантовыми ямами
Алешкин В.Я.\Антонов А.В.\Гапонова Д.М.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Фотолюминесценция частично релаксированных слоев InGaAs
Дроздов Ю.Н.\Данилов Ю.А.\Звонков Б.Н.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Оптические характеристики дельта-легированных сверхрешеток GaAs
Звонков Б.Н.\Алешкин В.Я.\Гавриленко В.И.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Исследование квантовых ям GaInNAs_-GaAs, выращенных методом МОГФЭ
Мурель А.В.\Данильцев В.М.\Дроздов М.Н.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Исследование слоев GaN, выращенных на сапфире методом газофазной эпитаксии с использованием диметилгидразина и аммиака
Востоков Н.В.\Гапонова Д.М.\Данильцев В.М.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Исследование генерационных характеристик лазеров с вертикальным резонатором на основе In[0.2]Ga[0.8]As квантовых ям
Гайслер В.А.\Торопов А.И.\Бакаров А.К.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Электролюминесценция диодов Шоттки на основе гетероструктур с квантовыми точками InAs/GaAs в диапазоне 1.3_-1.5 мкм
Байдусь Н.В.\Звонков Б.Н.\Мокеева П.Б.\и др.
Изв. РАН. Сер. физ., Vol: 68, No: 1 , published: 24 September 2007
Temperature-dependent luminescence originating from the recombination of excitons in organic light-emitting materials
Zhong Gaoyu\Lin Jian\Wang Meiliang\et al.
Acta opt. sin=Guangxue xuebao , Vol: 26, No: 4 , published: 23 September 2007
Dimensional dependence of the dynamics of the Mn  3d5 luminescence in (Zn, Mn)S nanowires and nanobelts
L. Chen, T. Niebling, W. Heimbrodt, D. Stichtenoth, C. Ronning, and P. J. Klar
Phys. Rev. B: Condens. Matter, Vol: 76, No: 11 , published: 20 September 2007
Absorption, photoluminescence, and resonant Rayleigh scattering probes of condensed microcavity polaritons
F. M. Marchetti, J. Keeling, M. H. Szymańska, and P. B. Littlewood
Phys. Rev. B: Condens. Matter, Vol: 76, No: 11 , published: 20 September 2007
Photoluminescence characteristics of Sn-doped, molecular-beam-epitaxy-grown ZnSe crystal layers (brief communication)
Kuronuma Ryouichi\Miyamoto Yoshinobu\Mita Yoh
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
InAs/GaAs quantum-dot laser diode lasing at 1.3 _mm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy
Kim Kwang Woong\Cho Nam Ki\Ryu Sung Phil\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
Erbium-doped ZnO prepared by vapor-phase transport
Chao Liang-Chiun\Chiang Ping-Chang\Yang Shih-Hsuan\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 33-36 , published: 18 September 2007
Highly efficient yellowish-white phosphorescent organic light-emitting devices
Hsu Shih-Feng\Laskar Inamur R.\Chen Teng-Ming\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 33-36 , published: 18 September 2007
Гигантское изменение интенсивности туннельного послесвечения в возбужденных квантовых точках ZnO, индуцированное переориентацией спинов электронно-дырочных пар в статическом и микроволновом магнитных полях
Баранов П.Г.\Романов Н.Г.\Толмачев Д.О.\и др.
Письма в ЖЭТФ, Vol: 84, No: 7-8 , published: 18 September 2007
Exciton states in strongly coupled asymmetric semimagnetic-double quantum dots
Zaitsev S.V.\Welsch M.K.\Forchel A.\Bacher G.
Письма в ЖЭТФ, Vol: 84, No: 7-8 , published: 18 September 2007
p-type transparent conducting oxides
Sheng Su\Fang Guojia\Li Chun\et al.
Phys. Status Solidi A, Vol: 203, No: 8 , published: 18 September 2007
Stress and density of defects in Si-doped GaN
Chine Z.\Rebey A.\Touati H.\et al.
Phys. Status Solidi A, Vol: 203, No: 8 , published: 18 September 2007
Temperature effect on current_-voltage characteristics of molecular organic tris(8-hydroxyquinoline) aluminium complex
Kumar Pankaj\Misra Aparna\Kamalasanan M.N.\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature
Masui Hisashi\Schmidt Mathew C.\Chakraborty Arpan\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
Lifetime and electric characteristics of encapsulated organic light-emitting devices
Yang Yong Suk\Chu Hye Yong\Lee Jeong-Ik\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
Semiconductor light-emitting diodes with separated current-injection and light-emitting areas
Kuo Hao-Chung\Chi Jim Y.\Wang Xue-Lun
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 33-36 , published: 18 September 2007
First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared on semipolar planes
Masui Hisashi\Baker Troy J.\Sharma Rajat\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 33-36 , published: 18 September 2007
Sharp, long wavelength cathodoluminescence emission from undoped semi-insulating GaAs
Radahakrishnan J.K.\Salviati G.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
Carbon incorporation on (1~-101) facet of AlGaN in metal organic vapor phase epitaxy
Koide Norikatsu\Hikosaka Toshiki\Honda Yoshio\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 10A , published: 18 September 2007
1.5 _mm luminescence of silicon nanowires fabricated by thermal evaporation of SiO
Jia G.\Kittler M.\Su Z.\et al.
Phys. Status Solidi A, Vol: 203, No: 8 , published: 18 September 2007
Analysis of quantum dot fluorescence coupled with a microsphere resonator
Takashima Hideaki\Fukiwara Hideki\Hotta Jun-ichi\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Ultrafast dynamics of exciton_-exciton and exciton_-longitudinal optical-phonon scattering processes in ZnO epitaxial thin films
Takeda Jun\Arai Nobuyuki\Toshine Yuki\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Study of optical properties of zinc oxide thin film implanted with nitrogen by combinatorial ion implantation techniques (brief communication)
Sakaguchi Isao\Sato Yoshiyuki\Haneda Hajime\Ohashi Naoki
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Влияние очередности легирования порошкообразного ZnS хлоридом меди и индием на формирование центров люминесценции
Бачериков Ю.Ю.\Кицюк Н.В.\Мишук О.Н.
Ж. прикл. спектроскопии, Vol: 73, No: 5 , published: 14 September 2007
Температурная зависимость фото- и электролюминесценции кристаллов ZnS:Mn
Полежаев Б.А.\Прокофьев Т.А.\Коваленко А.В.\Буланый М.Ф.
Ж. прикл. спектроскопии, Vol: 73, No: 5 , published: 14 September 2007
Две серии полос "дислокационной" фотолюминесценции в кристаллах теллурида кадмия
Тарбаев Н.И.\Шепельский Г.А.
Физ. и техн. полупроводников , Vol: 40, No: 10 , published: 14 September 2007
Оптическое исследование резонансных состояний в GaN[x]As[1_-x]
Гуткин А.А.\Брунков П.Н.\Гладышев А.Г.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 10 , published: 14 September 2007
Температурная зависимость фотолюминесценции нанокластеров CdS, сформированных в матрице пленки Ленгмюра Блоджетт
Багаев Е.А.\Журавлев К.С.\Свешникова Л.Л.
Физ. и техн. полупроводников , Vol: 40, No: 10 , published: 14 September 2007
Особенности фотолюминесценции ионов эрбия в структурах с кремниевыми нанокристаллами
Жигунов Д.М.\Шалыгина О.А.\Тетеруков С.А.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 10 , published: 14 September 2007
Сопоставление электрических свойств и фотолюминесценции в зависимости от состава слоев SiO[x], содержащих нанокристаллы кремния
Антонова И.В.\Гуляев М.Б.\Яновицкая З.Ш.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 10 , published: 14 September 2007
Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl[2]/BCl[3]/Ar plasma
Wang Tzong-Bin\Hsu Wei-Chou\Che Yen-Wei\Chen Yeong-Jia
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Spin injection into organic light-emitting devices with ferromagnetic cathode and effects on their luminescence properties
Shikoh Eiji\Fujiwara Akihiko\Ando Yasuo\Miyazaki Terunobu
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Temperature characteristics of high modulation rate platinum-diffused AlGaInP resonant-cavity light-emitting diodes (brief communication)
Hsieh Li-Zen\Yeh Der-Hwa\Chang Liann-Be\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Исследование влияния кислорода на спектры катодолюминесценции и ширину запрещенной зоны ZnS[x]Se[1_-x]
Морозова Н.К.\Каретников И.А.\Мидерос Д.А.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 10 , published: 14 September 2007
Photoluminescence spectroscopy of PbSe nanocrystals
Jeffrey M. Harbold and Frank W. Wise
Phys. Rev. B: Condens. Matter, Vol: 76, No: 12 , published: 10 September 2007
Захват и рекомбинация носителей в полупроводниковых квантовых точках CdSe/ZnSe
Днепровский В.С.\Жуков Е.А.\Шалыгина О.А.\и др.
Ж. эксперим. и теор. физ., Vol: 125, No: 1 , published: 07 September 2007
High-efficiency excitonic emission with deep_-ultraviolet light from (001)-oriented diamond p_-i_-n junction
Makino Toshiharu\Tokuda Norio\Kato Hiromitsu\et al.
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 37-41 , published: 07 September 2007
Линейная поляризация излучения квантовых ям ZnCdSe/ZnSe, индуцированная анизотропным профилем интерфейсов
Травников В.В.\Кайбышев В.Х.
Письма в ЖЭТФ, Vol: 83, No: 7-8 , published: 07 September 2007
Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy
Ken-ichi Isono, Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 9A , published: 07 September 2007
Analysis of Carrier Traps in Silicon Nitride Film with Discharge Current Transient Spectroscopy, Photoluminescence, and Electron Spin Resonance
Hiroshi Aozasa, Ichiro Fujiwara, and Yoshiaki Kamigaki
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 9A , published: 07 September 2007
Линейно поляризованное терагерцовое излучение в одноосно деформированном Ge(Ga) при пробое примеси электрическим полем
Андрианов А.В.\Захарьин А.О.\Яссиевич И.Н.\Зиновьев Н.Н.
Письма в ЖЭТФ, Vol: 83, No: 7-8 , published: 07 September 2007
Estimation of luminescence lifetime in frequency domain
Zhang Fu-Jun\Xu Zheng\Zhao Su-Ling\et al.
Chin. Phys., Vol: 15, No: 3 , published: 07 September 2007
Simultaneous determination of trap depth and the ratio of the rate of recombination to that of capture from thermo-luminescence
Xu Zheng\Zhang Fu-Jun\Zhao Su-Ling\et al.
Chin. Phys., Vol: 15, No: 8 , published: 07 September 2007
Локальные экситонные состояния на изоэлектронных центрах в сверхрешетках
Бондарь Н.В.
Физ. низ. температур, Vol: 30, No: 2 , published: 06 September 2007
Interference effects in the emission spectra of QD's in high quality cavities
Keldysh L.V.\Kulakovskii V.D.\Reitzenstein S.\et al.
Письма в ЖЭТФ, Vol: 84, No: 9-10 , published: 06 September 2007
Ultrafast photoluminescence dynamics of biexcitons in a CuCl thin film grown by vacuum deposition
Nakayama M.\Wakaiki S.\Mizoguchi K.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Luminescence of anthracene molecules in single crystal matrices
Aoki-Matsumoto T.\Furukawa C.\Hoshika Y.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Quantum confinement effects on electron spin g-factor in semiconductor quantum well structures
Ito Tetsu\Shichi Wataru\Morisada Shinsuke\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Optical properties of ZnO homoepitaxial thin films grown by an rf-magnetron sputtering method
Wakaiki S.\Kim D.\Komura S.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Photoluminescence of Mg[x]Zn[1_-x]O films grown on a saphire substrate by a MOCVD technique
Liu C.Y.\Liu Y.C.\Zhang B.P.\Mu R.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Photoluminescence due to inelastic scattering processes of excitons in a GaN thin film grown by metalorganic vapor phase epitaxy
Tanaka H.\Ando M.\Uemura T.\Nakayama M.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Morphology changes of CuCl thin films induced by photo-irradiation
Hasuo Masahiro\Shimamoto Atsuyoshi\Fujiwara Takeshi
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
The influence of waveguide modes on stimulated emission from ZnO nanorods
Hauschild R.\Lange H.\Urban A.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Influence of the Jahn_-Teller effect on absorption and photoluminescence spectra of Si nanocrystals
Scholz Reinhard\Puladsaz Davoud\Schreiber Michael
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Exciton luminescence of ZnO fine particles
Danhara Y.\Hirai T.\Harada Y.\Ohno N.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Luminescence properties of Eu-doped ZnO nanocrystals/polymer hybrid
Ichida Masao\Wada T.\Kachi M.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Annealing effects on the photoluminescence and morphology of ZnO nanowires
Francis Tam'ra-Kay\Ueda Akira\Aga Roberto\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Photoluminescence and FTIR study of ZnO nanoparticles: the impurite and defect perspective
Xiong G.\Pal U.\Serrano J.G.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes
Donchev V.\Moskalenko E.S.\Karisson K.F.\et al.
Физ. тверд. тела, Vol: 48, No: 10 , published: 05 September 2007
Cathodoluminescence properties of GaAs/AlGaAs pyramidal cap structures with high spatial resolution
Sawada Y.\Ichimiya M.\Ashida M.\et al.
Phys. Status Solidi C, Vol: 3, No: 10 , published: 05 September 2007
Photoluminescence in implanted and doped silicon near room temperature
Matsubara Ichiro\Sasahara Shingo\Mishina Tomobumi\et al.
Phys. Status Solidi B, Vol: 243, No: 8 , published: 03 September 2007
Электролюминесценция слоев SiO[2] с избыточным кремнием
Барабан А.П.\Егоров Д.В.\Петров Ю.В.\Милоглядова Л.В.
Письма в ЖТФ, Vol: 30, No: 2 , published: 03 September 2007
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources
Begotti M.\Ghezzi C.\Longo M.\et al.
Cryst. Res. Technol., Vol: 40, No: 10-11 , published: 02 September 2007
Growth aspects of AlGaAs/GaAs tunnel diodes for mutlijunction solar cells
Tim~2o G.\Flores C.\Campesato R.
Cryst. Res. Technol., Vol: 40, No: 10-11 , published: 02 September 2007
Electrical and optical activation studies of Si-implanted GaN
Fellows Jamesa A.\Yeo Y.K.\Ryu Mee-Yi\Hengehold R.L.
J. Electron. Mater., Vol: 34, No: 8 , published: 02 September 2007
Defect profiles in semiconductor structures
P. G. Coleman
Phys. Status Solidi C, Vol: 4, No: 10 , published: 01 September 2007
Effect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple wells
Kajikawa Yasutomo\Nishimoto Naoki\Fujioka Daisuke\Ichida Katsuya
Jpn. J. Appl. Phys., Part 1, Vol: 44, No: 4A , published: 31 August 2007
Strain reduction and long wavelength emission from InAs/GaAs quantum dots by using growth interruption in molecular beam epitaxy
Saravanan Shangmugam\Shimizu Hitoshi\Vaccaro Pablo O.
Jpn. J. Appl. Phys., Part 1, Vol: 44, No: 4A , published: 31 August 2007
Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si (brief communication)
Chang Chin-An\Lien Shao-Tang\Liu Chen-Han\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 44, No: 4A , published: 31 August 2007
Site-control of InAs quantum dots using ex-ditu electron-beam lithographic patterning of GaAs substrates (brief communication)
Atkinson P.\Ward M.B.\Bremner S.P.\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 44, No: 4A , published: 31 August 2007
Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells
Ray S.K.\Groom K.M.\Liu H.Y.\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 44, No: 4A , published: 31 August 2007
Spin interactions in InAs quantum dots and molecules
Doty M.F.\Ware M.E.\Stinaff E.A.\et al.
Phys. Status Solidi B, Vol: 243, No: 15 , published: 31 August 2007
Dephasing of excited-state excitons in InGaAs quantum dots
Borri P.\Langbein W.\Muljarov E.A.\Zimmermann R.
Phys. Status Solidi B, Vol: 243, No: 15 , published: 31 August 2007
Spin relaxation of positive trions in InAs/GaAs quantum dots: the role of hyperfine interaction
Braun Pierre-Fran~Ecois\Eble Beno~7it\Lombez Laurent\et al.
Phys. Status Solidi B, Vol: 243, No: 15 , published: 31 August 2007
Semiconductor quantum dots devices: Recent advances and application prospects (invited)
Reithmaier J.P.\Somers A.\Kaiser W.\et al.
Phys. Status Solidi B, Vol: 243, No: 15 , published: 31 August 2007
Improved emission spectrum from quantum dot superluminescent light emitting diodes
Li L.H.\Rossetti M.\Fiore A.\et al.
Phys. Status Solidi B, Vol: 243, No: 15 , published: 31 August 2007
Deep level transient spectroscopy (DLTS) and photo luminescence (PL) studies on molecular beam epitaxy (MBE) gallium arsenide. (GaAs)/gallium aluminum arsenide (GaAlAs) quantum wells under pressure: identification of band discontinuties, well location and emission kinetics
Saxena Ashok K.
Rom. J. Phys., Vol: 51, No: 3-4 , published: 31 August 2007
Фотолюминесцентные исследования гетеропереходов ~I~I типа GaAsP/GaInAsP
Винокуров Д.А.\Зорина С.А.\Капитонов В.А.\и др.
Письма в ЖТФ, Vol: 30, No: 24 , published: 30 August 2007
Properties of the CdTe/InSb interface studied by optical and surface analytical techniques
Feng Z.C.\Hung S.Y.\Wee A.T.S.
Phys. Status Solidi A, Vol: 203, No: 9 , published: 30 August 2007
Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
Ciosek Jerzy\Misiuk Andrzej\Surma Barbara\Shchennikov Vladimir V.
Phys. Status Solidi A, Vol: 203, No: 9 , published: 30 August 2007
Туннелирование электронов в тонкопленочных электролюминесцентных излучателях на основе ZnS:Mn
Гурин Н.Т.\Рябов Д.В.\Сабитов О.Ю.\Афанасьев А.М.
Письма в ЖТФ, Vol: 31, No: 3 , published: 30 August 2007
Interface properties of ZnO nanotips grown on Si substrates
Chen H.\Zhong J.\Saraf G.\et al.
J. Electron. Mater., Vol: 35, No: 6 , published: 29 August 2007
Effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma-assisted molecular beam epitaxy
Lee W.C.T.\Henseler M.\Miller P.\et al.
J. Electron. Mater., Vol: 35, No: 6 , published: 29 August 2007
HgCdTe negative luminescence devices for cold Shielding and other applications
Lindle J.R.\Bewley W.W.\Vurgaftman I.\et al.
J. Electron. Mater., Vol: 35, No: 6 , published: 29 August 2007
Mapping of zinc content in Cd[1_-x]Zn[x]Te by optical methods
Horodysk~1y P.\Franc J.\Grill R.\et al.
J. Electron. Mater., Vol: 35, No: 6 , published: 29 August 2007
Получение сильнокомпенсированного InAs методом облучения протонами
Зотова Н.В.\Карандашев С.А.\Матвеев Б.А.\и др.
Письма в ЖТФ, Vol: 30, No: 1 , published: 29 August 2007
Size-dependent spectroscopic, optical, and electrical properties of PbSe nanoparticles
Badr Y.\Mahmoud M.A.
Cryst. Res. Technol., Vol: 41, No: 7 , published: 28 August 2007
Electroluminescence studies of chemically deposited (Zn-Cd)S:Cu,F films
Khare Ayush\Bhushan Shashi
Cryst. Res. Technol., Vol: 41, No: 7 , published: 28 August 2007
Influence of ITO surface treatment on performance of organic light-emitting devices
Wang Jing/Jiang Wenlong/Wang Guangde/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 8 , published: 25 August 2007
Millisecond-range electron spin memory in singly-charged InP quantum dots
Pal Bipul\Ikezawa Michio\Masumoto Yasuaki\Ignatiev Ivan V.
J. Phys. Soc. Jpn., Vol: 75, No: 5 , published: 24 August 2007
Structural and photolumienscence study of coevaporated CuInSe[2]/Si(100) thin films
Merdes Saoussen\Bechiri Lakhdar\Benabdeslem Mohammed\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 3A , published: 24 August 2007
Optical properties of indium-doped ZnO films
Cao Yongge\Miao Lei\Tanemura Sakae\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 3A , published: 24 August 2007
Syntehsis of single crystalline In[2]O[3] nanowires and their photolumienscence characteristics (brief communication)
Min Byungdon\Lee Jong-Soo\Keem Kihyun\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 6A , published: 23 August 2007
Fabrication and magnetooptical properties of nanostructures of diluted magnetic semiconductors integrated with glass thin films
Murayama Akihiro\Hyomi Kyoko\Sakuma Mio\Souma Izuru
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 6A , published: 23 August 2007
On the optical, thermal, and vibrational properties of nano-ZnO:Mn, a diluted magnetic semiconductor
Lakshmi P. Vinotha Boorana/Ramachandran K.
Int. J. Thermophys., Vol: 28, No: 4 , published: 23 August 2007
Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes
Chu Ta-Ya\Chen Szu-Yi\Chen Jenn-Fang\Chen Chin H.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 6A , published: 23 August 2007
Влияние структуры молекул на спектры фотолюминесценции и поглощения тонких пленок фталоцианина меди в ближней ИК области спектра
Казанский А.Г.\Теруков Е.И.\Зиминов А.В.\и др.
Письма в ЖТФ, Vol: 31, No: 18 , published: 20 August 2007
Магнитостабилизированные многочастичные связанные состояния в полупроводниках
Сибельдин Н.Н.
Успехи физ. наук, Vol: 173, No: 9 , published: 20 August 2007
Stable optical emission from annealed poly (p-phenylene vinylene) derivative films containing oxadiazole
Kong F.\Wu X.L.\Yuan R.K.\et al.
J. Electron. Mater., Vol: 35, No: 9 , published: 20 August 2007
Studies of the optoelectronic properties of ZnO thin films
Ghosh R.\Fujihara S.\Basak D.
J. Electron. Mater., Vol: 35, No: 9 , published: 20 August 2007
Спин-зависимая рекомбинация в твердых растворах GaAsN
Калевич В.К.\Ивченко Е.Л.\Афанасьев М.М.\и др.
Письма в ЖЭТФ, Vol: 82, No: 7-8 , published: 17 August 2007
Экситон-дырочное рассеяние в ZnTe
Багаев В.С.\Зайцев В.В.\Клевков Ю.В.\Кривобок В.С.
Физ. тверд. тела, Vol: 47, No: 10 , published: 17 August 2007
Large bandgap bowing of In[x]Ga[1_-x]N films and growth of blue/green In[x]Ga[1_-x]N/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures
Lee Kang Jea\Oh Tae Su\Kim Tae Ki\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers
Paskov P.P.\Schifano R.\Malinauskas T.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN
Wang W.J.\Miwa H.\Hashimoto A.\Yamamoto A.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
NH[3]/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN
Yamamoto A.\Miwa H.\Shibata Y.\Hashimoto A.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxy
Wang Xinqiang\Che Song-Bek\Ishitani Yoshihiro\Yoshikawa Akihiko
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
Neubert B.\Habel F.\Br~:uckner P.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Fabrication of InN/AlInN MQWs by RF-MBE
Terashima W.\Che S.B.\Ishitani Y.\Yoshikawa A.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Fabrication of InN/InGaN multiple quantum well structures by RF-MBE
Kurouchi M.\Na H.\Naoi H.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Influence of gas composition on the synthesis of gallium nitride powders by two-stage chemical vapor method
Hara K.\Yonemura A.\Uchida T.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Thermalization and recombination in exponential band tail states
Niehus M.\Schwarz R.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Optical cavity formation on GaN using a conventional RJE system
Kalaitzakis F.G.\Konstantinidis G.\Tsagaraki K.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets
Florescu D.I.\Ting S.M.\Merai V.N.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Conduction and valence band edge properties of hexagonal InN characterized by optical measurements
Ishitani Y.\Terashima W.\Che S.B.\Yoshikawa A.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Photoluminescence depth-profiling of lattice-mismatched InGaN thick film on GaN using inductively coupled plasma etching
Lee Ji-Myon\Kim Byung-Il\Park Seong-Ju
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy
Honda Tohru\Sawada Masaru\Kobayashi Toshiaki\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys
Fukui K.\Naoe S.\Okada K.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
Arnaudov B.\Paskov P.P.\Haratizadeh H.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
The magnesium acceptor states in GaN an investigation by optically detected magnetic resonance
Aliev G.N.\Zeng S.\Davies J.J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy
Kaneta Akio\Funato Mitsuru\Narukawa Yukio\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
Yaguchi H.\Morioke T.\Aoki T.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Effect of ~V/~I~I~I ratio on the optical properties of Eu-doped GaN
Sawahata J.\Seo J.W.\Takiguchi M.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
The role of vacancies in the red luminescence from Mg-doped GaN
Zeng S.\Aliev G.N.\Wolverson D.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVD~b
Tamulatis G.\Mickevi~3cius J.\Shur M.S.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques
Lutsenko E.V.\Gurskii A.L.\Pavlovskii V.N.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Coupling of phonons with excitons bound to different donors and acceptors in hexagonal GaN
Korona K.P.\Wysmolek A.\Kuhl J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Enhanced emission efficiency of InGaN films with Si doping
Li Da-Bing\Liu Yu-Huai\Katsuno Takuya\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Fabrication and characterization of 20 periods InN/InGaN MQWs
Che Song-Bek\Ishitani Yoshihiro\Yoshikawa Akihiko
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells
Hashemizadeh S.A.\Wells J.-P.R.\Brown J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assited MBE on bulk GaN substrates
Korona K.P.\Skierbiszewski C.\Siekacz M.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters
Fuhrmann D.\Rossow U.\Netzel C.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
High quantum efficiency InGaN/GaN structures emittings at 540 nm
Graham D.M.\Dawson P.\Godfrey M.J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization
Gotoh H.\Tawara T.\Kobayashi Y.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Photoluminescence and edge-incident wavelenght modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures
Lin D.Y.\Chen W.L.\Lin W.C.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Anitsotropic ambipolar diffusion of carriers in InGaN/GaN quantum wells
Wang Y.J.\Xu S.J.\Li Q.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Optical spectra of (1~-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate
Kim Eun-Hee\Hikosaka Toshiki\Narita Tetsuo\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Resonant photoluminescence excitaion studies of InGaN/GaN single quantum wells
Craham D.M.\Dawson P.\Godfrey M.J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures
Graham D.M.\Dawson P.\Zhang Y.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Tb-doped GaN quantum dots grown by plasma-assisted molecular beam epitaxy
Hori Yuji\Andreev Thomas\Jalabert Denis\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance
Sizov D.S.\Sizov V.S.\Lundin V.V.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Microphotoluminescence of GaN/AlN quantum dots grown by MBE
Zhuravlev K.S.\Ree D.D.\Mansurov V.G.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Influence of stacking on optical characteristics of GaN/AlN self-organized quantum dots
Kwon B.J.\Hwang J.S.\Kwack H.S.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Carrier dynamics in site-controlled Ga[1_-x]In[x]N quantum dots
Jetter M.\P~1erez-Sol~1orzano V.\Gr~:oning A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Structural and optical characterization of Al[y]In[x]Ga[1_-x_-y]N quantum dots
P~1erez-Sol~1orzano V.\Gr~:oning A.\Schweizer H.\Jetter M.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate
Dworzak M.\Stempel T.\Hoffmann A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Exciton dynamics in nonpolar (11~-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
Onuma T.\Chakraborty A.\Haskell B.A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Two-dimensional electron gas in cubic Al[x]Ga[1_-x]N/GaN heterostructures
Potthast S.\Sch~:ormann J.\Fernandez J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Prolonged kinetics of photoluminescence of two-dimensional electron gas in AlGaN/GaN heterostructure
Shamirzaev T.S.\Korzhavina N.S.\Mansurov V.G.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation
Tamulaitis G.\Kazlauskas K.\~3Zukauskas A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Carrier dynamics of optical emission from two-dimensional electron gas in undoped AlGaN/GaN single heterojunctions
Kwack H.S.\Cho Y.H.\Kim G.H.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Optical characteristics of two-dimensional electrons in single and multiple Al[2]Ga[1_-x]N/GaN heterostructures grown by metalorganic chemical vapor deposition
Kim Sun-Mo\Kwack Ho-Sang\Hwang Sun-Woong\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy
Kudrawiec R.\Syperek M.\Misiewicz J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneites
Carrett G.A.\Sampath A.V.\Collins C.J.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Evaluation of wavelength shifts of green and blue light emitting diodes with InN/GaN multiple quantum wells
Kim Je Won\Lee Kyu Han\Hong Sangsu
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates
Hwang J.S.\Choi J.W.\Gokama A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Carrier capture and escape processes in (In[x]Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy
Satake A.\Soejima K.\Aizawa H.\Fujiwara K.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Magnetic, optical and electrical properties of GaN and AlN doped with rare-earth element Gd
Choi S.W.\Zhou Y.K.\Emura S.\et l.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Fabrication and characterization of Ni-based Schottky-type Al[x]Ga[1_-x]N ultraviolet photodetectors with different buffer conditions
Park Ki Yon\Kwon Bong Joon\Son Jeong Hwan\Cho Yong-Hoon
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
Cordier Y.\Pruvost F.\Semond F.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE
Kim K.H.\Ahp H.S.\Yang M.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Degradation of blue LEDs related to structural disorder
Kamanin A.V.\Kolmakov A.G.\Kop'ev P.S.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates
Huang Shih-Yung\Horng Ray-Hua\Wang Wei-Kai\Wuu Don-Sing
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
InGaN-based light-emitting diodes grown on grooved sapphire substrates
Wang Wei-Kai\Wuu Don-Sing\Lin Shu-Hei\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Micro-EL studying of high power blue LEDs
Onushkin G.A.\Zakgeim A.L.\Zakgeim D.A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers
Kuo C.H.\Chang S.J.\Chi G.C.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping
Rozhansky I.V.\Zakheim D.A.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Imrovement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire
Lee Jae-Hoon\Oh Jeong-Tak\Park Jin-Sub\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates
Tinjod Frank\De Mierry Philippe\Lancefield David\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices
Kane M.H.\Strassburg M.\Fenwick W.E.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure
Franssen G.\Suski T.\Perlin P.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
n-type conductivity control of AlGaN with high Al mole fraction
Katsuno Takuya\Liu Yuhuai\Li Dabing\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
InN-based layers grown by modified HVPE
Syrkin A.\Usikov A.\Soukhoveev V.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Orientation-dependent properties of aluminum nitride single crystals
Bickermann M.\Heimann P.\Epelbaum B.M.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Cathodoluminescence properties of InGaN codoped with Zn and Si
Honda Y.\Yanase Y.\Yamaguchi M.\Sawaki N.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence
Martin R.W.\Rading D.\Kersting R.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Membrane structures containing InGaN/GaN quantum wells fabricated by wet etching of sacrificial silicon substrates
Park S.-H.\Liu C.\Gu E.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Eu{3+} location in Eu doped GaN thin films and quantum dots
Andreev Thomas\Liem Nguyen Quang\Hori Yuji\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
InGaN blue cathodoluminescence phosphors synthesized with long reaction time in a new reactor
Kanie Hisashi\Kobayashi Shingo\Sema Yuji
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Electrical and recombination properties and deep traps spectra in MCVD ELOG GaN layers
Lee In-Hwan\Polyakov A.Y.\Smirnov N.B.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Cathodoluminescence and electrophysical characterization of Al[x]Ga[1_-x]N epilayers
Kozlovsky V.I.\Skasyrsky Y.K.\Dikme Y.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Структурные и фотолюминесцентные свойства гетероэпитаксиальных слоев кремния на сапфире
Светлов С.П.\Чалков В.Ю.\Шенгуров В.Г.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Влияние ионной имплантации P{+}, B{+} и N{+} на люминесцентные свойства системы SiO[2]:nc-Si
Тетельбаум Д.И.\Горшков О.Н.\Бурдов В.А.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Фотолюминесценция и структурные дефекты слоев кремния, имплантированных ионами железа
Штейнман Э.А.\Вдовин В.И.\Изотов А.Н.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Излучательная электронно-дырочная рекомбинация в кремниевых квантовых точках с участием фононов
Беляков В.А.\Бурдов В.А.\Гапонова Д.М.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Si/Ge наноструктуры для применений в оптоэлектронике
Егоров В.А.\Цырлин Г.Э.\Тонких А.А.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Фотолюминесценция GeSi/Si(001) самоорганизующихся наноостровков различной формы
Востоков Н.В.\Красильник З.Ф.\Лобанов Д.Н.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Фотолюминесценция Si/Ge-наноструктур, выращенных при низких температурах молекулярно-пучковой эпитаксии
Бурбаев Т.М.\Курбатов В.А.\Погосов А.О.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Особенности спектров возбуждения фотолюминесценции ионов Er{3+} в эпитаксиальных кремниевых структурах, легированных эрбием
Андреев Б.А.\Красильник З.Ф.\Крыжков Д.И.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Влияние режимов роста на фотолюминесценциях слоев кремния, легированных эрбием в процессе сублимационной МЛЭ
Шенгуров В.Г.\Светлов С.П.\Чалков В.Ю.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Эффективная люминесценция ионов эрбия в системах кремниевых нанокристаллов
Кашкаров П.К.\Каменев Б.В.\Лисаченко М.Г.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
The role of microstructure in luminescent properties of Er-doped nanocrystalline Si thin films
Stepikhova M.V.\Cerqueira M.F.\Losurdo M.\et al.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Внутризонное поглощение и излучение света в квантовых ямах и квантовых точках
Воробьев Л.Е.\Паневин В.Ю.\Федосов Н.К.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Бозе-конденсация межъямных экситонов в латеральных ловушках: фазовая диаграмма
Дремин А.А.\Ларионов А.В.\Тимофеев В.Б.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Электронные состояния и колебательные спектры сверхрешеток квантовых точек CdTe/ZnTe
Багаев В.С.\Водопьянов Л.К.\Виноградов В.С.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Резонансное стоксовое и антистоксовое комбинационное рассеяние света в наноструктурах CdSe/ZnSe
Валах М.Я.\Стрельчук В.В.\Семенова Г.Н.\Садофьев Ю.Г.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Excitation intensity and temperature-dependent photoluminescence and optical absoption in Tl[4]Ga[3]InSe[8] layered crystals
Goksen K.\Gasanly N.M.\Turan R.
Cryst. Res. Technol., Vol: 41, No: 8 , published: 15 August 2007
Эффективность электролюминесценции кремниевых диодов
Бреслер М.С.\Гусев О.Б.\Захарченя Б.П.\Яссиевич И.Н.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Краевая электролюминесценция кремния: гетероструктура аморфный кремний_-кристаллический кремний
Бреслер М.С.\Гусев О.Б.\Теруков Е.И.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Влияние температуры постимплантационного отжига на свойства кремниевых светодидодов, полученных имплантацией ионов бора в n-Si
Соболев Н.А.\Емельянов А.М.\Шек Е.И.\Вдовин В.И.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Кремниевые светодиоды, излучающие в области зона-зонных переходов: влияние температуры и величины тока
Емельянов А.М.\Соболев Н.А.\Шек Е.И.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Влияние характера пробоя p_-n-перехода на интенсивность и эффективность возбуждения электролюминесценции ионов Er{3+} в эпитаксиальных слоях Si:Er, полученных методом сублимационной молекулярно-лучевой эпитаксии
Шмагин В.Б.\Ремизов Д.Ю.\Красильник З.Ф.\и др.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Новые механизмы локализации носителей заряда в нано-Si
Блонский И.В.\Вахнин А.Ю.\Кадан В.Н.\Кадащук А.К.
Физ. тверд. тела, Vol: 46, No: 1 , published: 15 August 2007
Effect of Y co-doping on the photoluminescence and lifetime of Er{3+} in silicate glasses
Miao Zhuang\Li Shan-Feng\Zhang Qing-Yu
Acta phys. sin., Vol: 55, No: 8 , published: 14 August 2007
Спектры микрофотолюминесценции теллурида кадмия, полученного в неравновесных условиях
Ушаков В.В.\Клевков Ю.В.
Физ. и техн. полупроводников , Vol: 37, No: 9 , published: 12 August 2007
Влияние условий молекулярно-лучевой эпитаксии на захват кремния в подрешетки А и В арсенида галлия
Бобровникова И.А.\Вилисова М.Д.\Ивонин И.В.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 9 , published: 12 August 2007
Оптические и структурные свойства твердых растворов InGaAsP, полученных способом МОС-гидридной эпитаксии на подложках GaAs(001) в области несмешиваемости
Вавилова Л.С.\Винокуров Д.А.\Капитонов В.А.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 9 , published: 12 August 2007
Зависимость энергии активации A(+)-центров от ширины квантовых ям в структурах GaAs/AlGaAs
Иванов Ю.Л.\Петров П.В.\Тонких А.А.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 9 , published: 12 August 2007
Эффективное сечение возбуждения фотолюминесценции и время жизни в возбужденном состоянии ионов Er{3+} в многослойных селективно легированных Si:Er-структурах
Гастев С.В.\Емельянов А.М.\Соболев Н.А.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 9 , published: 12 August 2007
Mechanisms for photoluminescence from nanoscale silicom/silicon oxide systems
Qin Guo-Gang
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 24, No: 3 , published: 12 August 2007
Photoluminescence of low dimensional semiconductor structures under pressure
Li Guo-Hua\Chen Ye\Fang Zai-Li\et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 24, No: 3 , published: 12 August 2007
Optical properties and excion localization in GaNAs/GaAs
Luo Xiang-Dong\Xu Zhong-Ying\Tan Ping-Heng\Ge Wei-Kun
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 24, No: 3 , published: 12 August 2007
Photoluminescence of large-sized InAs/GaAs quantum dots under hydrostatic pressure
Ma Bao-Shan\Wang Xiao-Dong\Luo Jun-Wei\et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 24, No: 3 , published: 12 August 2007
Электронно-колебательная структура в диапазоне 2.8_-3.6 эВ спектра фотолюминесценции кубического нитрида бора
Шишонок Е.М.\Стидс Дж.
Ж. прикл. спектроскопии, Vol: 70, No: 5 , published: 12 August 2007
Электрические свойства и спектры люминесценции светодиодов на основе гетеропереходов InGaN/GaN с модулированно-легированными квантовыми ямами
Мамакин С.С.\Юнович А.Э.\Ваттана А.Б.\Маняхин Ф.И.
Физ. и техн. полупроводников , Vol: 37, No: 9 , published: 12 August 2007
Investigations on optical properties of AlGaInN epilayers grown by MOCVD
Jiang De-Sheng\Liu Jian-Ping\Yang Hui
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 24, No: 3 , published: 12 August 2007
Microscopic theory of quantum dot luminescence spectra
Gies Christopher\Baer Norman\Wiersig Jan\Jahnke Frank
Phys. Status Solidi C, Vol: 3, No: 7 , published: 10 August 2007
Nature and dynamics of carrier escape from InAs/GaAs quantum dots
Rubel O.\Dawson P.\Baranovskii S.D.\et al.
Phys. Status Solidi C, Vol: 3, No: 7 , published: 10 August 2007
Two-photon coherent control of dark orthoexcitons in Cu[2]O
Yoshioka K.\Kuwata-Gonokami M.
Phys. Status Solidi C, Vol: 3, No: 7 , published: 10 August 2007
Multielectron processes in the optics of two-dimensional excitons
Kochereshko V.\Andronikov D.\Crooker S.A.\et al.
Phys. Status Solidi C, Vol: 3, No: 7 , published: 10 August 2007
Nonlinear excitation kinetics of biased quantum wells: coherent dynamical screening effect
Turchinovich D.\Uhd Jepsen P.
Phys. Status Solidi C, Vol: 3, No: 7 , published: 10 August 2007
Экситон-экситонное взаимодействие в квантовых ямах GaAs/AlGaAs при интенсивном оптическом возбуждении
Яременко Н.Г.\Галиев Г.Б.\Карачевцева М.В.\и др.
Докл. РАН, Vol: 409, No: 6 , published: 10 August 2007
Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
Gan Feng, Kunishige Oe, and Masahiro Yoshimoto
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 29-32 , published: 10 August 2007
Porous Silicon Formation by Photoetching in HF/H2O2 Solution Using Incoherent Light Source
Seigo Tomioka, Takayuki Miyazaki, and Sadao Adachi
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 8A , published: 06 August 2007
Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
Tetsuomi Sogawa, Haruki Sanada, Hideki Gotoh, Hiroshi Yamaguchi, Sen Miyashita, and Paulo V. Santos
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 29-32 , published: 03 August 2007
Influence of dislocation loops on the near-infrared light emission from silicon diodes
Hoang T.\Holleman J.\LeMinh P.\et al.
IEEE Trans. Electron Devices , Vol: 54, No: 8 , published: 03 August 2007
Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
Qhalid Fareed, Vinod Adivarahan, Mikhail Gaevski, Thomas Katona, Jin Mei, Fernando A. Ponce, and Asif Khan
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 29-32 , published: 03 August 2007
New semiconductor alloy GaNAsBi with temperature-insensitive bandgap
Yoshimoto Masahiro\Huang Wei\Feng Gan\Oe Kunishige
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Growth of high-In-content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma-assisted molecular-beam epitaxy
Kouno Tetsuya\Kikuchi Akihiko\Kishino Katsumi
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Low density GaN quantum dots on AlGaN
Paku~ma K.\Bo~.zek R.\Surowiecka K.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates
S~1anchez-Garc~1ia M.A.\Grandal J.\Calleja E.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy
Ueta A.\Akahane K.\Gozu S.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Electric fields in AlGaN/GaN quantum well structures (invited)
McAleese C.\Costa P.M.F.J.\Graham D.M.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Transient pump_-probe measurements for polarized excitons in strained GaN epitaxial layers
Ishiguro T.\Toda Y.\Adachi S.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Transition energies and Stokes shift analysis for In-rich InGaN alloys
Schley P.\Goldhahn R.\Winzer A.T.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
The dominant shallow 0.225 eV acceptor in GaN
Monemar B.\Paskov P.P.\Bergman J.P.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates
~3Zukauskas A.\Kazlauskas K.\Tamulaitis G.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non-(0001) GaN facets
Feneberg M.\Schirra M.\Neubert B.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells
Tchernycheva M.\Nevou L.\Doyennette L.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Fast spin relaxation in InGaN/GaN multiple quantum wells
Brown J.\Wells J.-P.R.\Hashemizadeh S.A.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum-well structures embedded in an asymmetric microcavity
Lin D.Y.\Shiu J.J.\Lin C.F.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Optical properties of single non-polar GaN quantum dots
Rol F.\Gayral B.\Founta S.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Growth and optical characterization of InAsN quantum dots
Tsurusawa H.\Nishikawa A.\Katayama R.\Onabe K.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Micro-photoluminescence stuides of InGaN/GaN quantum dots up to 150 K
Sebald K.\Lohmeyer H.\Gutowski J.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
GaN/AlGaN superlattices for optoelectronics in the mid-infrared
Guillot F.\Monroy E.\Gayral B.\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Фотолюминесценция в поликристаллических слоях Pb[1_-x]Cd[x]Se, активированных в присутствии паров йода
Гамарц А.Е.\Мошников В.А.\Чеснокова Д.Б.
Физ. и техн. полупроводников , Vol: 40, No: 6 , published: 02 August 2007
Бозе-конденсация межъямных экситонов и пространственная структура люминесценции в латеральных ловушках
Горбунов А.В.\Тимофеев В.Б.
Успехи физ. наук, Vol: 176, No: 6 , published: 02 August 2007
Undoped and rare-earth doped GaN quantum dots on AlGaN
Hori Yuji\Andreev Thomas\Florian Thomas\et al.
Phys. Status Solidi B, Vol: 243, No: 7 , published: 02 August 2007
Спектры люминесценции, эффективность и цветовые характеристики светодиодов белого свечения на основе p_-n-гетероструктур InGaN/GaN, покрытых люминофорами
Бадгутдинов М.Л.\Коробов Е.В.\Лукьянов Ф.А.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 6 , published: 02 August 2007
Growth and characterization of bilayer InAs/GaAs quantum dot structures
Liang B.L.\ang Zh.M.\Mazur Yu.I.\et al.
Phys. Status Solidi A, Vol: 203, No: 10 , published: 01 August 2007
Influence of annealing temperature on the structural and optical properties of sol_-gel prepared ZnO thin films
Wang Mingsong\Kim Eui Jung\Chung Jin Suk\et al.
Phys. Status Solidi A, Vol: 203, No: 10 , published: 01 August 2007
Formation of Si and Ge quantum structures by laser-induced etching
Mavi H.S.\Prusty Sudakshina\Kumar Manoj\et al.
Phys. Status Solidi A, Vol: 203, No: 10 , published: 01 August 2007
PLE spectra analysis of the sub-structure in the absorption spectra of CdSeS quantum dots
Liu Bing-Can\Pan Xue-Qin\Tian Qiang\Wu Zhang-Long
Chin. Phys., Vol: 15, No: 5 , published: 30 July 2007
Влияние дополнительно введенных примесей Zn и Eu на вид спектров фотолюминесценции кристаллов GaN, легированных Er
Мездрогина М.М.\Криволапчук В.В.\Петров В.Н.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 12 , published: 30 July 2007
Свойства эпитаксиальных слоев антимонида галлия, полученных методом газофазной эпитаксии из металлорганических соединений
Левин Р.В.\Власов А.С.\Зотова Н.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 12 , published: 30 July 2007
Preparation of SiO[x] nanowires by hydrothermal method and thier photoluminescence
Li Xiaoxinag/Tang Yuanhong/Lin Liangwu/Li Jialin
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 7 , published: 27 July 2007
GaSb bulk materials and InAs/GaSb superlattices grown by MBE on GaAs substrates
Hao Huiting/Xu Yingqiang/Zhou Zhiqiang/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 7 , published: 27 July 2007
Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
Chen Zhizhong/Xu Ke/Qin Zhixin/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 7 , published: 27 July 2007
Люминесценция наностержней ZnO, полученных газотранспортным синтезом на Si-подложках (111)
Георгобиани А.Н.\Грузинцев А.Н.\Козловский В.И.\и др.
Неорган. матер., Vol: 42, No: 7 , published: 26 July 2007
Особенности фотолюминесценции метаморфных квантовых точек InAs, связанные с кооперативными явлениями в системе квантовые точки _- матрица
Васильев А.П.\Гладышев А.Г.\Жуков А.Е.\и др.
Письма в ЖТФ, Vol: 33, No: 14 , published: 26 July 2007
Photoluminescence characterization of strained Si_-SiGe-on-insulator wafers
Wang Dong\Matsumoto Koji\Nakamae Masahiko\Nakashima Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AlN/GaN distributed Bragg reflectors (Brief Communication)
Peng Yu-Chun\Kao Chih-Chiang\Huang Hung-Wen\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Highly enhanced efficiency and stability of photo- and electroluminescence of nano-crystalline porous silicon by high-pressure water vapor annealing
Gelloz Bernard\Sohida Nobuyoshi
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Nature of deep-level defects in GaCrN magnetic semiconductor
Subashchandran Shanthi\Kimura Shigeya\Kim Moo Seong\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy
Chen W.C.\Su Y.K.\Chuang R.W.\Hsu S.H.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Growth of GaNAs/GaAs multiple quantum well by molecular beam epitaxy using modulated N radical beam source
Takao Katsuhiro\Fujii Kensuke\Miyagawa Hayato\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Interface states of AlSb/InAs heterointerface with AlAs-like interface
Gozu Shin-ichiro\Akahane Kouichi\Yamaoto Naokatsu\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
Wang Te-Chung\Kuo Hao-Chung\Lu Tien-Chang\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Multi-quantum structures of GaAs/AlGaAs free-standing nanowires
Tateno Kouta\Gotoh Hideki\Watanabe Yoshio
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Pulse area control of exciton Rabi oscillation in InAs/GaAs single quantum dot
Goshima Keishiro\Komori Kazuhiro\Yamauchi Shohgo\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Ultrafast exciton dynamics in (AlAs)[0.3]/(GaAs)[0.7] ultrashort-P period superlattice
Takizawa Shin-ichi\Hari Hideki\Miyaoka Yasuteru\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Ultraviolet lasing of sol_-gel-derived zinc oxide polycrystalline films
Kuo Shou-Yi\Lai Fang-I\Chen Wei-Chun\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Characteristics of flip-chip InGaN-based light-emitting diodes on patterned sapphire substrates
Wang Wei-Kai\Wuu Dong-Sing\Lin Shu-Hei\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
GaN-based green resonant cavity light-emitting diodes
Huang Shih-Yung\Horng Ray-Hua\Wang Wei-Kai\Wuu Dong-Sing
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates
Uang Kai-Ming\Wang Shui-Jinn\Chen Shiue-Lung\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces
Huang Hung-Wen\Chu Jung-Tang\Kao Chih-Chiang\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Emission properties of InGaAsSbN quantum well laser diodes in 2 _mm wavelength region grown on InP substrates
Kawamura Yuichi\Nakagawa Tomokatsu\Inoue Naohisa
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Effects of thickness of organic and multilayer anode on luminance efficiency in top-emission organic light emitting diodes
Lin Shin-Ju\Ueng Han-Yi\Juang Fuh-Shyang
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Study of transient electroluminescence process using organic light-emitting diode with partial doping layer
Kajii Horitake\Takahashi Kazuya\Kim Ju-Seung\Ohmori Yutaka
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Characteristics of electroluminescence based on Zn complexes
Jang Yoon-Ki\Kim Dong-Eun\Kim Won-Sam\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Improvement in luminance efficiency by insertion of buffer layers in flexible organic light-emitting diodes
Yang Tsung-Hsien\Juang Fuh-Shyang\Tsai Yu-Sheng\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 4B , published: 25 July 2007
Краевая фотолюминесценция при комнатной температуре монокристаллического кремния
Гуле Е.Г.\Каганович Э.Б.\Кизяк И.М.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 4 , published: 24 July 2007
Экситонная фотолюминесценция и вертикальный транспорт фотовозбужденных носителей в сверхрешетках CdSe/CdMgSe
Решина И.И.\Иванов С.В.\Мирлин Д.Н.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 4 , published: 24 July 2007
Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy
Qiu Kai/Zhong Fei/Li Xin-Hua/et al.
Chin. Phys., Vol: 16, No: 7 , published: 24 July 2007
Электролюминесценция структур Si_-SiO[2], последовательно имплантированных кремнием и углеродом
Барабан А.П.\Петров Ю.В.
Физ. тверд. тела, Vol: 48, No: 5 , published: 24 July 2007
Characterization and modeling of broad spectrum InAs_-GaAs quantum-dot superluminescent diodes emitting at 1.2_-1.3 _mm
Rossetti Marco/Li Lianhe/Markus Alexander/et al.
IEEE J. Quantum Electron. , Vol: 43, No: 7-8 , published: 24 July 2007
Электронные ловушки с широким интервалом сечений захвата в порошкообразных люминофорах на основе ZnS
Зобов Е.М.\Зобов М.Е.\Камалудинова Х.Э.\Ризаханов М.А.
Ж. прикл. спектроскопии, Vol: 72, No: 2 , published: 24 July 2007
Поляризацiйнi залежностi випромiнювання свiтла вiльними електронами в багатодолинних напiвпровiдниках
Бондар В.М.\Левшин О.Е.\Томчук П.М.
Укр. фiз. ж., Vol: 51, No: 2 , published: 23 July 2007
Фотолюминесценция в области 1.5 мкм механически обработанных слоев монокристаллического кремния
Баталов Р.И.\Баязитов Р.М.\Андреев Б.А.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 12 , published: 20 July 2007
Фотолюминесценция при комнатной температуре в диапазоне 1.5_-1.6 мкм от наногетероструктур InGaAs/GaAs, выращенных при низкой температуре подложки
Тонких А.А.\Цырлин Г.Э.\Талалаев В.Г.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 12 , published: 20 July 2007
Эффект Ханле в неоднородно легированном GaAs
Джиоев Р.И.\Захарченя Б.П.\Кавокин К.В.\Лазарев М.В.
Физ. тверд. тела, Vol: 45, No: 12 , published: 20 July 2007
Исследование вторичного излучения в нанокристаллическом оксиде цинка
Горелик В.С.\Миков С.Н.\Соколовский М.И.\Тсузуки Т.
Неорган. матер., Vol: 42, No: 3 , published: 20 July 2007
Флуктуирующая флуоресценция одиночных молекул и полупроводниковых нанокристаллов
Осадько И.С.
Успехи физ. наук, Vol: 176, No: 1 , published: 20 July 2007
Лазерная генерация на длине волны 1.5 мкм в структурах с квантовыми точками на подложках GaAs
Жуков А.Е.\Васильев А.П.\Ковш А.Р.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 12 , published: 20 July 2007
Свойства светодиодов на основе GaSb, полученных путем химической огранки подложечной части светодиодных кристаллов
Гребенщикова Е.А.\Именков А.Н.\Журтанов Б.Е.\и др.
Физ. и техн. полупроводников , Vol: 37, No: 12 , published: 20 July 2007
Спонтанное и стимулированное излучение из полупроводниковых пленок Cd[x]Hg[1_-x]Te
Андронов А.А.\Ноздрин Ю.Н.\Окомельков А.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 11 , published: 19 July 2007
Фотоэмиссия поляризованных электронов из InAlGaAs_-GaAs-сверхрешеток с минимальными разрывами зоны проводимости
Герчиков Л.Г.\Мамаев Ю.А.\Субашиев А.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 11 , published: 19 July 2007
Subpicosecond near-infrared fluorescence upconversion study of relaxation processes in PbSe quantum dots
C. Bonati, A. Cannizzo, D. Tonti, A. Tortschanoff, F. van Mourik, and M. Chergui
Phys. Rev. B: Condens. Matter, Vol: 76, No: 3 , published: 18 July 2007
Влияние света на магнитные свойства полупроводников
Тверьянович Ю.С.\Ким Д.С.\Руснак Д.С.\Курочкин А.В.
Физ. и химия стекла, Vol: 31, No: 5 , published: 17 July 2007
Диффузионные слои ZnTe:Sn с электронной проводимостью
Махний В.П.\Гривул В.И.
Физ. и техн. полупроводников , Vol: 40, No: 7 , published: 16 July 2007
Сверхбыстрая автомодуляция спектра поглощения света, возникающая при сверхкоротких оптической накачке и суперлюминесценции в GaAs
Агеева Н.Н.\Броневой И.Л.\Кривоносов А.Н.\Стеганцов С.В.
Физ. и техн. полупроводников , Vol: 40, No: 7 , published: 16 July 2007
Анализ причин падения эффективности электролюминесценции светодиодных гетероструктур AlGaInN при большой плотности тока накачки
Рожанский И.В.\Закгейм Д.А.
Физ. и техн. полупроводников , Vol: 40, No: 7 , published: 16 July 2007
Электролюминесценция на длине волны 1.54 мкм в структурах Si:Er/Si, выращенных методом сублимационной молекулярно-лучевой эпитаксии
Кузнецов В.П.\Ремизов Д.Ю.\Шабанов В.Н.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 7 , published: 16 July 2007
Электролюминесценция в области межзонных переходов эффективного кремниевого светодиода с малой площадью выпрямляющего контакта
Емельянов А.М.\Забродский В.В.\Забродская Н.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 7 , published: 16 July 2007
Антистоксова люминесценция твердых растворов AgCl[0.95]I[0.05]
Овчинников О.В.\Евлев А.Б.\Ефимова М.А.\и др.
Ж. прикл. спектроскопии, Vol: 72, No: 6 , published: 13 July 2007
Собственные дефекты в кристаллах ZnO и GaN
Рогозин И.В.\Мараховский А.В.
Ж. прикл. спектроскопии, Vol: 72, No: 6 , published: 13 July 2007
Механизмы возбуждения фотолюминесценции ионов Mn{2+} в кристаллах ZnS
Прокофьев Т.А.\Полежаев Б.А.\Коваленко А.В.
Ж. прикл. спектроскопии, Vol: 72, No: 6 , published: 13 July 2007
Фотолюминесценция кристаллов ZnS:Cu при различных концентрациях меди
Сушкевич К.Д.\Соболевская Р.Л.\Коротков В.А.\Брук Л.И.
Ж. прикл. спектроскопии, Vol: 72, No: 6 , published: 13 July 2007
Активация люминесценции сульфида цинка при модификации его поверхности органическими растворителями
Бачериков Ю.Ю.\Охрименко О.Б.\Томашик З.Ф.\и др.
Ж. прикл. спектроскопии, Vol: 72, No: 6 , published: 13 July 2007
Радиационные дефекты в тонких пленках Cu(In,Ga)Se[2] при высокоэнергетическом электронном облучении
Мудрый А.В.\Гременок В.Ф.\Иванюкович А.В.\и др.
Ж. прикл. спектроскопии, Vol: 72, No: 6 , published: 13 July 2007
Лазерное напыление пленок ZnO на кремниевые и сапфировые подложки
Жерихин А.Н.\Худобенко А.И.\Вилльямс Р.Т.\и др.
Квант. электрон., Vol: 33, No: 11 , published: 12 July 2007
Люминесценция и фотопроводимость пленок сульфида кадмия, легированных элементами ~I группы
Наумов А.В.\Болгова Т.Г.\Семенов В.Н.\и др.
Неорган. матер., Vol: 42, No: 5 , published: 12 July 2007
Люминесценция нанокристаллов ZnO различной формы, полученных методом газофазного синтеза
Грузинцев А.Н.\Редькин А.Н.\Якимов Е.Е.\и др.
Неорган. матер., Vol: 42, No: 5 , published: 12 July 2007
Фотостабильность люминесцентных водорастворимых нанокристаллов селенида кадмия при химической модификации поверхности
Гуринович Л.И.\Артемьев М.В.\Лютич А.А.\Гапоненко С.В.
Ж. прикл. спектроскопии, Vol: 73, No: 4 , published: 10 July 2007
Спектры фотолюминесценции планарных наноструктур на основе меди
Сосковец Я.Б.\Хайруллина А.Я.\Бабенко В.А.
Ж. прикл. спектроскопии, Vol: 73, No: 4 , published: 10 July 2007
Резонансная фотолюминесценция квантовых точек: динамика электронной подсистемы
Рухленко И.Д.\Федоров А.В.
Изв. РАН. Сер. физ., Vol: 70, No: 1 , published: 09 July 2007
Квазинанопроволоки из флуоресцентных полупроводниковых нанокристаллов на поверхности ориентированных молекул ДНК
Степуро В.\Суханова А.\Артемьев М.\и др.
Оптика и спектроскопия, Vol: 100, No: 6 , published: 08 July 2007
Температурные изменения фотолюминесценции и края собственного поглощения в кристалле (Ga[0.1]In[0.9])[2]Se[3]
Краньчец М.\Студеняк И.П.
Оптика и спектроскопия, Vol: 100, No: 1 , published: 08 July 2007
Оптические и фотолюминесцентные свойства наноматериалов на основе наночастиц сульфида кадмия и полиэтилена
Ушаков Н.М.\Юрков Г.Ю.\Баранов Д.А.\и др.
Оптика и спектроскопия, Vol: 101, No: 2 , published: 08 July 2007
Дрейф электронов и атомов в поле лазерного излучения и его влияние на оптические свойства полупроводников
Крупа Н.Н.\Коростиль А.М.\Скирта Ю.Б.
Изв. вузов. Радиофиз., Vol: 48, No: 8 , published: 08 July 2007
Спектры электролюминесценции структур на основе твердого раствора InGaN
Грушко Н.С.\Потанахина Л.Н.\Хайрулина А.С.
Оптика и спектроскопия, Vol: 101, No: 3 , published: 08 July 2007
Непрямые экситоны и двойные электронно-дырочные слои в широкой одиночной GaASs/AlGaAs квантовой яме в сильном электрическом поле
Соловьев В.В.\Кукушкин И.В.\Смет Ю.\и др.
Письма в ЖЭТФ, Vol: 83, No: 11-12 , published: 06 July 2007
Effect of the electric field on the carrier collection efficiency of InAs quantum dots
Moskalenko E.S.\Karlsson K.F.\Donchev V.\et al.
Физ. тверд. тела, Vol: 47, No: 11 , published: 03 July 2007
Экситонная и внутрицентровая люминесценция в структурах с квантовыми ямами Cd[0.6]Mn[0.4]Te/Cd[0.5]Mg[0.5]Te
Агекян В.Ф.\Васильев Н.Н.\Серов А.Ю.\и др.
Физ. тверд. тела, Vol: 47, No: 11 , published: 03 July 2007
Влияние дополнительной примеси Zn на вид спектров фотолюминесценции вюрцитных кристаллов GaN, легированных редкоземельным ионом Eu
Мездрогина М.М.\Криволапчук В.В.
Физ. тверд. тела, Vol: 48, No: 7 , published: 03 July 2007
Излучение конденсата экситонов в двойных квантовых ямах
Криволапчук В.В.\Жмодиков А.Л.\Москаленко Е.С.
Физ. тверд. тела, Vol: 48, No: 1 , published: 03 July 2007
Электрофизические свойства и низкотемпературная фотолюминесценция монокристаллов CdTe, легированных Si
Парфенюк О.А.\Илащук М.И.\Уляницкий К.С.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 2 , published: 03 July 2007
Морфология, двойникование и фотолюминесценция кристаллов ZnTe, выращенных методом химического синтеза компонентов из паровой фазы
Клевков Ю.В.\Мартовицкий В.П.\Багаев В.С.\Кривобок В.С.
Физ. и техн. полупроводников , Vol: 40, No: 2 , published: 03 July 2007
Зонная структура и спектр фотолюминесценции сверхрешетки Ge[0.8]Si[0.2]/Ge[0.1]Si[0.9] с вертикально совмещенными квантовыми точками
Сибирев Н.В.\Талалаев В.Г.\Тонких А.А.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 2 , published: 03 July 2007
Излучательная рекомбинация нанокристаллов GaN при большой мощности оптического возбуждения
Грузинцев А.Н.\Редькин А.Н.\Barthou C.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Влияние квантово-размерного эффекта на оптические свойства нанокристаллов Ge в пленках GeO[2]
Горохов Е.Б.\Володин В.А.\Марин Д.В.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Неравновесный характер распределения носителей при комнатной температуре в квантовых точках InAs, покрытых тонкими слоями AlAs/InAlAs
Крыжановская Н.В.\Гладышев А.Г.\Блохин С.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Исследование свойств двумерного электронного газа в гетероструктурах p{_-}-3C-SiC/n{+}-6H-SiC при низких температурах
Лебедев А.А.\Нельсон Д.К.\Разбирин Б.С.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Излучательная рекомбинация в структурах с квантовыми ямами Zn[1_-x]Mn[x]Te/Zn[0.59]Mg[0.41]Te _- экситонная и внутрицентровая люминесценция
Агекян В.Ф.\Васильев Н.Н.\Серов А.Ю.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 1 , published: 03 July 2007
Влияние имплантации ионов бора и последующих отжигов на свойства нанокристаллов Si
Качурин Г.А.\Черкова С.Г.\Володин В.А.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 1 , published: 03 July 2007
Оптическое детектирование асимметричных квантовых молекул в двухслойных структурах InAs/GaAs
Тарасов Г.Г.\Жученко З.Я.\Лисица М.П.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 1 , published: 03 July 2007
Характеристики экситонов и экситонная фотолюминесценция структур с кремниевыми квантовыми точками
Купчак И.М.\Корбутяк Д.В.\Крюченко Ю.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 1 , published: 03 July 2007
Особенности фотолюминесценции самоформирующихся островков Ge(Si)/Si (001), выращенных на напряженном слое Si[1_-x]Ge[x]
Дроздов Ю.Н.\Красильник З.Ф.\Лобанов Д.Н.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 3 , published: 03 July 2007
Гетероструктуры с квантовыми ямами и квантовыми точками InAs/InGaNAs/GaNAs, излучающие в спектральном диапазоне 1.4_-1.8 мкм
Михрин В.С.\Васильев А.П.\Семенова Е.С.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 3 , published: 03 July 2007
Светоизлучающие структуры Si:Er, полученные методом молекулярно-лучевой эпитаксии: фотолюминесцентная спектроскопия высокого разрешения
Крыжков Д.И.\Соболев Н.А.\Андреев Б.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 12 , published: 03 July 2007
Электрические свойства гетеропереходов n-GaN/p-SiC
Ледяев О.Ю.\Стрельчук А.М.\Кузнецов А.Н.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 12 , published: 03 July 2007
Хвост локализованных состояний в запрещенной зоне квантовой ямы в системе In[0.2]Ga[0.8]N/GaN и его влияние на спектр фотолюминесценции при лазерном возбуждении
Якобсон М.А.\Нельсон Д.К.\Константинов О.В.\Матвеенцев А.В.
Физ. и техн. полупроводников , Vol: 39, No: 12 , published: 03 July 2007
Особенности фотолюминесценции структур InAs/GaAs с квантовыми точками при различной мощности накачки
Кульбачинский В.А.\Рогозин В.А.\Лунин Р.А.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 11 , published: 03 July 2007
Фотолюминесценция кремниевых нанокристаллов под действием электрического поля
Вандышев Е.Н.\Гилинский А.М.\Шамирзаев Т.С.\Журавлев К.С.
Физ. и техн. полупроводников , Vol: 39, No: 11 , published: 03 July 2007
Циркулярная поляризация люминесценции, обусловленная током в квантовых ямах
Аверкиев Н.С.\Силов А.Ю.
Физ. и техн. полупроводников , Vol: 39, No: 11 , published: 03 July 2007
Передача энергии фотовозбуждения в нанокомпозите пористый кремний_-фуллерен в кислородсодержащей атмосфере
Пикулев В.Б.\Кузнецов С.Н.\Сарен А.А.\и др.
Письма в ЖТФ, Vol: 32, No: 3 , published: 03 July 2007
Механизм токопрохождения в электролюминесцентных структурах пористый кремний/монокристаллический кремний
Евтух А.А.\Каганович Э.Б.\Манойлов Э.Г.\Семененко Н.А.
Физ. и техн. полупроводников , Vol: 40, No: 2 , published: 03 July 2007
Электролюминесценция в пористом кремнии при обратном смещении барьера Шоттки
Берашевич Ю.А.\Лазарук С.К.\Борисенко В.Е.
Физ. и техн. полупроводников , Vol: 40, No: 2 , published: 03 July 2007
Механизм излучательной рекомбинации в твердых растворах Si_-Ge в области межзонных переходов
Емельянов А.М.\Соболев Н.А.\Мельникова Т.М.\Абросимов Н.В.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Терагерцовая электролюминесценция за счет пространственно непрямых межподзонных переходов в квантово-каскадной структуре GaAs/AlGaAs
Глинский Г.Ф.\Андрианов А.В.\Сресели О.М.\Зиновьев Н.Н.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Электролюминесцентные свойства светодиодов на основе p-Si, подвергнутых деформации
Соболев Н.А.\Емельянов А.М.\Шек Е.И.\и др.
Физ. и техн. полупроводников , Vol: 39, No: 10 , published: 03 July 2007
Неоднородность инжекции носителей заряда и деградация голубых светодиодов
Бочкарева Н.И.\Ефремов А.А.\Ребане Ю.Т.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 1 , published: 03 July 2007
Электролюминесценция варизонных структур с антизапорным и омическим контактами
Соколовский Б.С.\Иванов-Омский В.И.\Ильчук Г.А.
Физ. и техн. полупроводников , Vol: 39, No: 12 , published: 03 July 2007
Многоплазменные реплики полос излучения связанных экситонов в кристаллах ZnSe
Клюканов А.А.\Сушкевич К.Д.\Чукичев М.В.\и др.
Физ. тверд. тела, Vol: 48, No: 7 , published: 03 July 2007
О взаимодействии квазичастиц в светочувствительных кристаллах
Барщевский Б.У.\Рябова Р.В.
Докл. РАН, Vol: 400, No: 1 , published: 01 July 2007
Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure
S. Shevchenko, A. Tereshchenko
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
The role of dislocations in producing efficient near-bandgap luminescence from silicon
K. Fraser, D. Stowe, S. Galloway, S. Senkader, R. Falster, P. Wilshaw
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers
J. Ng, U. Bangert, M. Missous
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
Luminescence of dislocation network in directly bonded silicon wafers
X. Yu, M. Kittler, O. F. Vyvenko, W. Seifert, T. Arguirov, T. Wilhelm, M. Reich
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
Quantum confinement effect in nanohills formed on a surface of Ge by laser radiation
Artur Medvid, Igor Dmytruk, Pavels Onufrijevs, Iryna Pundyk
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
Influence of dislocation decoration with mobile donors on exciton luminescence in ZnO crystals
I. V. Markevich, V. I. Kushnirenko, L. V. Borkovska, B. M. Bulakh, A. V. Rusavsky
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
Influence of Cu contamination on dislocation related luminescence
E. A. Steinman, A. N. Tereshchenko
Phys. Status Solidi C, Vol: 4, No: 8 , published: 01 July 2007
Study of dislocations in CdZnTe single crystals
Gangqiang Zha, Wanqi Jie, Tingting Tan, Linghang Wang
Phys. Status Solidi A, Vol: 204, No: 7 , published: 01 July 2007
Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methods
T. Mchedlidze, T. Arguirov, G. Jia, M. Kittler
Phys. Status Solidi A, Vol: 204, No: 7 , published: 01 July 2007
Radiative properties of dislocations generated around oxygen precipitates in Si
E. A. Steinman, A. N. Tereshchenko, V. Ya. Reznik, R. J. Falster
Phys. Status Solidi A, Vol: 204, No: 7 , published: 01 July 2007
Enhanced ultraviolet photoluminescence from V-doped ZnO thin films prepared by a sol-gel process
Ling Wei, Liting Zhang, Yang Zhang, W. F. Zhang
Phys. Status Solidi A, Vol: 204, No: 7 , published: 01 July 2007
Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots
A. Sahli, A. Melliti, M. A. Maaref, C. Testelin, A. Lemaitre, R. Kuszelewicz, P. Voisin
Phys. Status Solidi B, Vol: 244, No: 7 , published: 01 July 2007
Surface photovoltaic effect in CdTe as influenced by recombination in the space-charge region
J. Touscaronek, J. Touscaronková, E. Belas, L. Votoccaronek
Phys. Status Solidi A, Vol: 204, No: 7 , published: 01 July 2007
Cathodoluminescence investigation of stacking faults extension in 4H-SiC
S. Juillaguet, M. Albrecht, J. Camassel, T. Chassagne
Phys. Status Solidi A, Vol: 204, No: 7 , published: 01 July 2007
Пикосекундная релаксация носителей в гетероструктурах 2-го типа ZnSe/BeTe
Максимов А.А.\Тартаковский И.И.\Яковлев Д.Р.\и др.
Письма в ЖЭТФ, Vol: 83, No: 3-4 , published: 29 June 2007
Коллективное состояние в бозе-газе взаимодействующих межъямных экситонов
Горбунов А.В.\Тимофеев В.Б.
Письма в ЖЭТФ, Vol: 83, No: 3-4 , published: 29 June 2007
Дальнаяя инфракрасная электролюминесценция в каскадных гетероструктурах ~I~I рода
Васильев Ю.Б.\Соловьев В.А.\Мельцер Б.Я.\и др.
Письма в ЖЭТФ, Vol: 75, No: 7-8 , published: 29 June 2007
Pattern formation and directional and spatial ordering of edge dislocations in bulk GaN: Microphotoluminescence spectra and continuum elastic calculations
Nikolaus Gmeinwieser and Ulrich T. Schwarz
Phys. Rev. B: Condens. Matter, Vol: 75, No: 24 , published: 27 June 2007
Synthesis and photoluminescence properties of Dy-doped ZnO nanocrystals
Zhang Linli/Guo Changxin
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 6 , published: 17 June 2007
Nonlinear dependence of the magnetophotoluminescence energies of asymmetric GaAs/Ga0.67Al0.33As quantum wells on an external magnetic field
W. Zawadzki, S. Bonifacie, S. Juillaguet, C. Chaubet, A. Raymond, Y. M. Meziani, M. Kubisa, and K. Ryczko
Phys. Rev. B: Condens. Matter, Vol: 75, No: 24 , published: 15 June 2007
Luminescent silicon nanostructures synthesized by laser ablation
D. Riabinina, C. Durand, F. Rosei, M. Chaker
Phys. Status Solidi A, Vol: 204, No: 6 , published: 01 June 2007
Optimization of the luminescence emission in nanocrystalline SiGe/SiO2 multilayers
A. Rodríguez, M. I. Ortiz, J. Sangrador, T. Rodríguez, M. Avella, A. C. Prieto, J. Jiménez, A. Kling, C. Ballesteros
Phys. Status Solidi A, Vol: 204, No: 6 , published: 01 June 2007
Visible and infrared photoluminescence from erbium-doped silicon nanocrystals produced by rf sputtering
M. F. Cerqueira, M. Losurdo, T. Monteiro, M. Stepikova, M. J. Soares, M. Peres, P. Alpuim
Phys. Status Solidi A, Vol: 204, No: 6 , published: 01 June 2007
Gaussian quantum dots of type II in in-plane electric field
J. Krasnyj, M. Tytus, W. Donderowicz, W. Jacak, A. Chuchmala
Phys. Status Solidi A, Vol: 204, No: 6 , published: 01 June 2007
Photoluminescence and electrolminescence properties of ZnO films on p-type silicon wafers
Wang Fei-Fei\Cao Li\Liu Rui-Bin\et al.
Chin. Phys., Vol: 16, No: 6 , published: 01 June 2007
Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices
Tohru Honda, Taichi Baba, Makiko Watanabe, Takashi Okuhata
Phys. Status Solidi A, Vol: 204, No: 6 , published: 01 June 2007
Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy
Tao Xu, A. Yu Nikiforov, Ryan France, Christos Thomidis, Adrian Williams, T. D. Moustakas
Phys. Status Solidi A, Vol: 204, No: 6 , published: 01 June 2007
Optical properties of silicon nanowires from cathodoluminescence imaging and time-resolved photoluminescence spectroscopy
M. Dovrat, N. Arad, X.-H. Zhang, S.-T. Lee, and A. Sa'ar
Phys. Rev. B: Condens. Matter, Vol: 75, No: 20 , published: 30 May 2007
Correlation between transport, dielectric, and optical properties of oxidized and nonoxidized porous silicon
B. Urbach, E. Axelrod, and A. Sa'ar
Phys. Rev. B: Condens. Matter, Vol: 75, No: 20 , published: 21 May 2007
Phase structure transition and optical properties of Mg[x]Zn[1_-x]O alloy
Wu Chunxia/L~:u Youming/Shen Dezhen/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 28, No: 5 , published: 20 May 2007
Location of quantum dots identified by microscopic photoluminescence changes during nanoprobe indentation with a horizontal scan
Yuan-Hua Liang, Masane Ohashi, Yoshio Arai, and Kazunari Ozasa
Phys. Rev. B: Condens. Matter, Vol: 75, No: 19 , published: 15 May 2007
Detection of optical trapping of CdTe quantum dots by two-photon-induced luminescence
Lingyun Pan, Atsushi Ishikawa, and Naoto Tamai
Phys. Rev. B: Condens. Matter, Vol: 75, No: 16 , published: 30 April 2007
Tunable Slow Light of 1.3 µm Region in Quantum Dots at Room Temperature
Hideki Gotoh, Shu-Wei Chang, Shun-Lien Chuang, Hiroshi Okamoto, and Yasuo Shibata
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates
Naokatsu Yamamoto, Kouichi Akahane, Shin-ichirou Gozu, Akio Ueta, Naoki Ohtani, and Masahiro Tsuchiya
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, Yu-Tai Shih, and Chien-Lin Lu
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes
Sumon K. Ray, Hui Y. Liu, Tom L. Choi, Kristian M. Groom, San L. Liew, Mark Hopkinson, and Richard A. Hogg
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure
Bernard Gelloz and Nobuyoshi Koshida
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Photoluminescence Characterization of Type-II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 Multiple-Quantum-Well Structures
Jian-Jhin Shiu, Wei-Li Chen, Der-Yuh Lin, Chu-Shou Yang, and Wu-Ching Chou
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
Kiyoshi Yasutake, Naotaka Tawara, Hiromasa Ohmi, Yoshikazu Terai, Hiroaki Kakiuchi, Heiji Watanabe, and Yasufumi Fujiwara
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure
Tzer-En Nee, Chih-Chun Ke, Cheng-Wei Hung, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, Chang-Cheng Chuo, and Zheng-Hong Lee
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process
Hou-Guang Chen, Nai-Fang Hsu, Jung-Tang Chu, Hsin-Hung Yao, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
Haruki Sanada, Hideki Gotoh, Kouta Tateno, and Hidetoshi Nakano
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Exciton Rabi Oscillation in Single Pair of InAs/GaAs Coupled Quantum Dots
Keishiro Goshima, Kazuhiro Komori, Shohgo Yamauchi, Isao Morohashi, and Takeyoshi Sugaya
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4B , published: 24 April 2007
Суперлюминесцентные диоды повышенной эффективности на основе гетероструктуры с квантовыми точками
Андреева Е.В./Лапин П.И./Прохоров В.В./Якубович С.Д.
Квант. электрон., Vol: 37, No: 4 , published: 16 April 2007
Strain-Induced Compositional Fluctuation and V-Defect Formation in Green-InGaN/GaN Multi-Quantum Wells Grown on Sapphire and Freestanding GaN Substrates
Tran Viet Cuong, Jae Young Park, Muthusamy Senthil Kumar, Chang-Hee Hong, Eun Kyung Suh, and Mun Seok Jeong
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 13 April 2007
Photoluminescence Imaging of Multicrystalline Si Wafers during HF Etching
Hiroki Sugimoto and Michio Tajima
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 06 April 2007
Color Control and White Emission of Organic Light-Emitting Device by External Light
Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi, and Kiyoshi Yase
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 06 April 2007
Photoluminescence from Si Nanocrystals Embedded in In2O3/SiO2 Glass Thin Films
Kimihisa Matsumoto, Minoru Fujii, and Shinji Hayashi
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4A , published: 05 April 2007
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto, Narihito Okada, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tadashi Noro, Takashi Takagi, and Akira Bandoh
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 4A , published: 05 April 2007
Microluminescence from Cd1−xMnxTe magnetic quantum dots containing only a few Mn ions
P. Wojnar, J. Suffczyński, K. Kowalik, A. Golnik, G. Karczewski, and J. Kossut
Phys. Rev. B: Condens. Matter, Vol: 75, No: 15 , published: 02 April 2007
Investigation of photoluminescence and electroconductivity of ZnTe grown in hydrogen atmosphere
Korbutyak D.V.\Vakhnvak N.D.\Tsutsura D.I.\et al.
Укр. фiз. ж., Vol: 52, No: 4 , published: 02 April 2007
Dislocation structure and "dislocation" photoluminescence in cadmium telluride crystals
Boyko V.A.\Tarbaev N.I.\Shepelskii G.A.
Укр. фiз. ж., Vol: 52, No: 4 , published: 02 April 2007
Emission lines from excitons with collision in indirect semiconductors
Shokichi Kanno, Hideyo Okushi
Phys. Status Solidi B, Vol: 244, No: 4 , published: 01 April 2007
InGaN/GaN nanopillar-array light emitting diodes
C. J. Neufeld, C. Schaake, M. Grundmann, N. A. Fichtenbaum, S. Keller, U. K. Mishra
Phys. Status Solidi C, Vol: 4, No: 5 , published: 01 April 2007
Short-period InAs/GaSb superlattices for mid-infrared photodetectors
H. J. Haugan, F. Szmulowicz, G. J. Brown, B. Ullrich, S. R. Munshi, J. C. Wickett, D. W. Stokes
Phys. Status Solidi C, Vol: 4, No: 5 , published: 01 April 2007
Blue-shift of phosphorous-implanted InGaAs/InGaAsP MQW laser structures by two-step anneals
Young Tae Byun, Kyoung Sun Choi, Sun Ho Kim
Phys. Status Solidi C, Vol: 4, No: 5 , published: 01 April 2007
Investigations of InSb-based quantum dots grown by molecular-beam epitaxy
N. Deguffroy, V. Tasco, A. N. Baranov, B. Satpati, A. Trampert, M. Dunaevski, A. Titkov, F. Genty, E. Tournié
Phys. Status Solidi C, Vol: 4, No: 5 , published: 01 April 2007
Room temperature Sb-based mid-infrared VCSELs
F. Genty, L. Cerutti, A. Garnache, A. Ouvrard, A. Pérona, P. Grech, D. Romanini, F. Chevrier
Phys. Status Solidi C, Vol: 4, No: 5 , published: 01 April 2007
GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices
Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Tohru Honda
Phys. Status Solidi C, Vol: 4, No: 5 , published: 01 April 2007
Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells
M. Hugues, B. Damilano, J.-Y. Duboz, and J. Massies
Phys. Rev. B: Condens. Matter, Vol: 75, No: 11 , published: 30 March 2007
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
Maxime Hugues, Mirja Richter, Jean-Michel Chauveau, Benjamin Damilano, Jean-Yves Duboz, Jean Massies, Thierry Taliercio, Pierre Lefebvre, Thierry Guillet, Pierre Valvin, Thierry Bretagnon, Bernard Gil, and Andreas D. Wieck
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 30 March 2007
Low-Threshold Current-Injection Single-Mode Lasing in T-shaped GaAs/AlGaAs Quantum Wires
Shu-man Liu, Masahiro Yoshita, Makoto Okano, Toshiyuki Ihara, Hirotake Itoh, Hidefumi Akiyama, Loren Pfeiffer, Ken West, and Kirk Baldwin
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 30 March 2007
Temperature behavior of the photoluminescence decay of semiconducting carbon nanotubes: The effective lifetime
D. Karaiskaj, A. Mascarenhas, Jong Hyun Choi, Rachel Graff, and Michael S. Strano
Phys. Rev. B: Condens. Matter, Vol: 75, No: 11 , published: 29 March 2007
Effect of the shell on the blinking statistics of core-shell quantum dots: A single-particle fluorescence study
Colin D. Heyes, Andrei Yu. Kobitski, Vladimir V. Breus, and G. Ulrich Nienhaus
Phys. Rev. B: Condens. Matter, Vol: 75, No: 12 , published: 28 March 2007
AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
Daniel F. Feezell, Mathew C. Schmidt, Robert M. Farrell, Kwang-Choong Kim, Makoto Saito, Kenji Fujito, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, and Shuji Nakamura
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 23 March 2007
Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
Ming-Jer Jeng, Yuan-Hsiao Chang, Liann-Be Chang, Mei-Jiau Huang, and Jia-Chuan Lin
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 23 March 2007
Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition
Osamu Tsuda, Kenji Watanabe, and Takashi Taniguchi
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 23 March 2007
Photon Antibunching in the Emission from a Single Organic Dye Nanocrystal
Sadahiro Masuo, Akito Masuhara, Takeaki Akashi, Mai Muranushi, Shinjiro Machida, Hitoshi Kasai, Hachiro Nakanishi, Hidetoshi Oikawa, and Akira Itaya
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 16 March 2007
247 nm Ultra-Violet Light Emitting Diodes
Jianyu Deng, Yuriy Bilenko, Alex Lunev, Xuhong Hu, Thomas M. Katona, Jianping Zhang, Michael S. Shur, and Remis Gaska
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 12-16 , published: 16 March 2007
Atomic scale structure and optical emission of AlxGa1−xAs/GaAs quantum wells
C. Ropers, M. Wenderoth, L. Winking, T. C. G. Reusch, M. Erdmann, R. G. Ulbrich, M. Grochol, F. Grosse, R. Zimmermann, S. Malzer, and G. H. Döhler
Phys. Rev. B: Condens. Matter, Vol: 75, No: 11 , published: 15 March 2007
Extended electron states in lateral quantum dot molecules investigated with photoluminescence
T. v. Lippen, A. Yu. Silov, and R. Nötzel
Phys. Rev. B: Condens. Matter, Vol: 75, No: 11 , published: 14 March 2007
Photoluminescence of HgTe/Hg1−xCdxTe superlattices and a study of minibands
C. R. Becker, S. D. Hatch, F. Goschenhofer, V. Latussek, J. M. Dell, and L. Faraone
Phys. Rev. B: Condens. Matter, Vol: 75, No: 11 , published: 13 March 2007
The structure and photoluminescence of SiO[2] films with Ge nanocrystals obtained by pulsed laser deposition
Kaganovich E.B.\Manoilov E.G.\Begun E.V.\et al.
Укр. фiз. ж., Vol: 52, No: 3 , published: 03 March 2007
Two-dimensional optical spectroscopy of excitons in semiconductor quantum wells: Liouville-space pathway analysis
Lijun Yang, Igor V. Schweigert, Steven T. Cundiff, and Shaul Mukamel
Phys. Rev. B: Condens. Matter, Vol: 75, No: 12 , published: 02 March 2007
Identification of defect-trap-related europium sites in gallium nitride
Z. Fleischman, P. S. Tafon, V. Dierolf, C. Munasinghe, A. J. Steckl
Phys. Status Solidi C, Vol: 4, No: 3 , published: 01 March 2007
Luminescence characteristics of the LPE-grown undoped and In-doped ZnO thin films and bulk single crystals
J. Pejchal, Y. Kagamitani, D. Ehrentraut, H. Sato, H. Odaka, H. Hatanaka, M. Nikl, A. Yoshikawa, H. Fukumura, T. Fukuda
Phys. Status Solidi C, Vol: 4, No: 3 , published: 01 March 2007
Tuning the exciton luminescence in an acoustically depleted two-dimensional electron gas
O. A. Korotchenkov and A. Cantarero
Phys. Rev. B: Condens. Matter, Vol: 75, No: 8 , published: 23 February 2007
Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
M. G. Silly, P. Jaffrennou, J. Barjon, J.-S. Lauret, F. Ducastelle, A. Loiseau, E. Obraztsova, B. Attal-Tretout, and E. Rosencher
Phys. Rev. B: Condens. Matter, Vol: 75, No: 8 , published: 12 February 2007
830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
Yu Higuchi, Shinji Osaki, Yoshifumi Sasahata, Takahiro Kitada, Satoshi Shimomura, Mutsuo Ogura, and Satoshi Hiyamizu
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 4-7 , published: 09 February 2007
High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
Mathew C. Schmidt, Kwang-Choong Kim, Hitoshi Sato, Natalie Fellows, Hisashi Masui, Shuji Nakamura, Steven P. DenBaars, and James S. Speck
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 4-7 , published: 09 February 2007
High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10\bar1\bar1) Bulk GaN Substrates
Anurag Tyagi, Hong Zhong, Natalie N. Fellows, Michael Iza, James S. Speck, Steven P. DenBaars, and Shuji Nakamura
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 4-7 , published: 09 February 2007
Влияние фемтосекундных импульсов сверхизлучения на спектры спонтанного излучения в гетероструктурах GaAs/AlGaS
Васильев П.П.\Кан Х.\Хирума Т.
Квант. электрон., Vol: 37, No: 11 , published: 03 February 2007
Свойства квантово-размерных структур GaAs/InGaAs, содержащих _d-легированные слои
Вихрова О.В.\Данилов Ю.А.\Дроздов Ю.Н.\и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 2 , published: 02 February 2007
Влияние термического отжига на физические свойства поверхностных слоев монокристаллического теллурида кадмия
Махний В.П.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 2 , published: 02 February 2007
Electroluminescence materials ZnS:Cu,Cl and ZnS:Cu,Mn,Cl studied by EXAFS spectroscopy
M. Warkentin, F. Bridges, S. A. Carter, and M. Anderson
Phys. Rev. B: Condens. Matter, Vol: 75, No: 7 , published: 01 February 2007
High Luminous Efficiency Blue Organic Light-Emitting Devices Using High Triplet Excited Energy Materials
Daisaku Tanaka, Yuya Agata, Takashi Takeda, Soichi Watanabe, and Junji Kido
Jpn. J. Appl. Phys., Part 2, Vol: 46, No: 4-7 , published: 26 January 2007
Tuning magnetoresistance and magnetic-field-dependent electroluminescence through mixing a strong-spin-orbital-coupling molecule and a weak-spin-orbital-coupling polymer
Yue Wu, Zhihua Xu, Bin Hu, and Jane Howe
Phys. Rev. B: Condens. Matter, Vol: 75, No: 3 , published: 26 January 2007
Mechanism of photoluminescence enhancement in single semiconductor nanocrystals on metal surfaces
Yuichi Ito, Kazunari Matsuda, and Yoshihiko Kanemitsu
Phys. Rev. B: Condens. Matter, Vol: 75, No: 3 , published: 17 January 2007
Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies
T. T. Chen, C. L. Cheng, Y. F. Chen, F. Y. Chang, H. H. Lin, C.-T. Wu, and C.-H. Chen
Phys. Rev. B: Condens. Matter, Vol: 75, No: 3 , published: 17 January 2007
Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InxGa1−xN/GaN multiple and single quantum wells
S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars
Phys. Rev. B: Condens. Matter, Vol: 75, No: 3 , published: 17 January 2007
Excitons in silicon nanocrystallites: The nature of luminescence
Eleonora Luppi, Federico Iori, Rita Magri, Olivia Pulci, Stefano Ossicini, Elena Degoli, and Valerio Olevano
Phys. Rev. B: Condens. Matter, Vol: 75, No: 3 , published: 09 January 2007
Extracting the number of quantum dots in a microenvironment from ensemble fluorescence intensity fluctuations
Inhee Chung, James B. Witkoskie, John P. Zimmer, Jianshu Cao, and Moungi G. Bawendi
Phys. Rev. B: Condens. Matter, Vol: 75, No: 4 , published: 08 January 2007
Blue-shift mechanisms in annealed (Ga,In)(N,As)/GaAs quantum wells
M. Hugues, B. Damilano, J.-M. Chauveau, J.-Y. Duboz, and J. Massies
Phys. Rev. B: Condens. Matter, Vol: 75, No: 4 , published: 08 January 2007
Люминесценция пленок ZnO, имплантированных ионами Au{+} с последующим отжигом в радикалах кислорода
Георгобиани А.Н.\Грузинцев А.Н.\Волков В.Т.\и др.
Кpатк. сообщ. по физ. ФИAН, Vol: 2007, No: 6 , published: 01 January 2007
Исследование электрических и оптических свойств кремния, содержащего кислородные преципитаты
Феклисова О.В.\Терещенко А.Н.\Штейнман Э.А.\Якимов Е.Б.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 7 , published: 01 January 2007
Идентификация дислокаций и их влияние на процессы рекомбинации носителей тока в нитриде галлия
Говорков А.В.\Поляков А.Я.\Югова Т.Г.\и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 7 , published: 01 January 2007
Ferromagnetic resonance study of GdN thin films with bulk and extended lattice constants
K. Khazen, H. J. von Bardeleben, J. L. Cantin, A. Bittar, S. Granville, H. J. Trodahl, and B. J. Ruck
Phys. Rev. B: Condens. Matter, Vol: 74, No: 24 , published: 27 December 2006
Triplet exciton energy transfer in polyfluorene doped with heavy metal complexes studied using photoluminescence and photoinduced absorption
H. H. Liao, H. F. Meng, S. F. Horng, W. S. Lee, J. M. Yang, C. C. Liu, J. T. Shy, F. C. Chen, and C. S. Hsu
Phys. Rev. B: Condens. Matter, Vol: 74, No: 24 , published: 15 December 2006
Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
A. Galeckas, A. Hallén, S. Majdi, J. Linnros, and P. Pirouz
Phys. Rev. B: Condens. Matter, Vol: 74, No: 23 , published: 14 December 2006
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence
V. Holý, Z. Matj, O. Pacherová, V. Novák, M. Cukr, K. Olejník, and T. Jungwirth
Phys. Rev. B: Condens. Matter, Vol: 74, No: 24 , published: 11 December 2006
Microwave-modulated photoluminescence of a two-dimensional electron gas
B. M. Ashkinadze, E. Linder, E. Cohen, and L. N. Pfeiffer
Phys. Rev. B: Condens. Matter, Vol: 74, No: 24 , published: 11 December 2006
Room-Temperature Stimulated Emission from AlN at 214 nm
Maxim Shatalov, Mikhail Gaevski, Vinod Adivarahan and Asif Khan
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 46-50 , published: 08 December 2006
Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3  eV spectral region in Mg-doped GaN
G. N. Aliev, S. Zeng, S. J. Bingham, D. Wolverson, J. J. Davies, T. Wang, and P. J. Parbrook
Phys. Rev. B: Condens. Matter, Vol: 74, No: 23 , published: 05 December 2006
Fractions of singlet and triplet excitons generated in organic light-emitting devices based on a polyphenylenevinylene derivative
Yohei Iwasaki, Takahiro Osasa, Miho Asahi, Michio Matsumura, Yoshio Sakaguchi, and Tomoyuki Suzuki
Phys. Rev. B: Condens. Matter, Vol: 74, No: 19 , published: 30 November 2006
Linear polarization of the photoluminescence of quantum wells subject to in-plane magnetic fields
A. V. Koudinov, N. S. Averkiev, Yu. G. Kusrayev, B. R. Namozov, B. P. Zakharchenya, D. Wolverson, J. J. Davies, T. Wojtowicz, G. Karczewski, and J. Kossut
Phys. Rev. B: Condens. Matter, Vol: 74, No: 19 , published: 28 November 2006
Controlling Polarization of 1.55-µm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
Kenichi Kawaguchi, Nami Yasuoka, Mitsuru Ekawa, Hiroji Ebe, Tomoyuki Akiyama, Mitsuru Sugawara and Yasuhiko Arakawa
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 46-50 , published: 24 November 2006
Uniform and Efficient UV-emitting ZnO/ZnMgO Multiple Quantum Wells Grown by Radical-Source Molecular Beam Epitaxy
Sergey Sadofev, Sylke Blumstengel, Jian Cui, Joachim Puls, Fritz Henneberger, Reinhard Schneider, Dimitri Litvinov and Dagmar Gerthsen
Jpn. J. Appl. Phys., Part 2, Vol: 45, No: 46-50 , published: 24 November 2006
Ground-state transition energy in GaInNAs/GaAs quantum well structures
Yang Jinghai/Yang Lili/Zhang Yongjun/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 11 , published: 15 November 2006
Photoluminescence of single GaN/AlN hexagonal quantum dots on Si(111): Spectral diffusion effects
R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, and F. Semond
Phys. Rev. B: Condens. Matter, Vol: 74, No: 19 , published: 13 November 2006
Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005
W. J. Wang, F. H. Su, K. Ding, G. H. Li, S. F. Yoon, W. J. Fan, S. Wicaksono, and B. S. Ma
Phys. Rev. B: Condens. Matter, Vol: 74, No: 19 , published: 01 November 2006
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions
Zhang Xiao-Dong\Lin De-Xu\Li Gong-Ping\et al.
Acta phys. sin., Vol: 55, No: 10 , published: 30 October 2006
Exciton-plasma crossover with electron-hole density in T-shaped quantum wires studied by the photoluminescence spectrograph method
Masahiro Yoshita, Yuhei Hayamizu, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
Phys. Rev. B: Condens. Matter, Vol: 74, No: 16 , published: 27 October 2006
Photoluminescence of the inorganic-organic layered semiconductor (C6H5C2H4NH3)2PbI4: Observation of triexciton formation
Makoto Shimizu, Jun-ichi Fujisawa, and Teruya Ishihara
Phys. Rev. B: Condens. Matter, Vol: 74, No: 15 , published: 23 October 2006
Quantum theory of luminescence in multiple-quantum-well Bragg structures
M. Schäfer, M. Werchner, W. Hoyer, M. Kira, and S. W. Koch
Phys. Rev. B: Condens. Matter, Vol: 74, No: 15 , published: 19 October 2006
Temperature dependence of optical linewidth in single InAs quantum dots
S. Rudin, T. L. Reinecke, and M. Bayer
Phys. Rev. B: Condens. Matter, Vol: 74, No: 16 , published: 19 October 2006
Defects and their influence of properties of bulk ZnO single crystal
Wei Xuecheng/Zhao Youwen/Dong Zhiyuan/ALi Jinmin
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 10 , published: 14 October 2006
Plasma enhanced chemical vapor deposition and ultraviolet luminescence of nanocrystalline 6H-SiC thin films
Yu Wei/Cui Shuangkui/Lu Wanbing/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 10 , published: 14 October 2006
Vibronic spectrum of c-BN measured with cathodoluminescence
C. Manfredotti, R. Cossio, A. Lo Giudice, E. Vittone, and F. Fizzotti
Phys. Rev. B: Condens. Matter, Vol: 74, No: 15 , published: 11 October 2006
Photoluminescence polarization in individual CdSe nanowires
C. X. Shan, Z. Liu, and S. K. Hark
Phys. Rev. B: Condens. Matter, Vol: 74, No: 15 , published: 04 October 2006
Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments
E. Malguth, A. Hoffmann, W. Gehlhoff, O. Gelhausen, M. R. Phillips, and X. Xu
Phys. Rev. B: Condens. Matter, Vol: 74, No: 16 , published: 03 October 2006
Band-edge photoluminescence in CdTe
P. Horodyský, R. Grill, P. Hlídek
Phys. Status Solidi B, Vol: 243, No: 12 , published: 01 October 2006
The photoluminescence of ZnSe bulk single crystals excited by femtosecond pulse
Li Huan-Yong\Jie Wan-Qi\Zhang Shi-An\et al.
Chin. Phys., Vol: 15, No: 10 , published: 01 October 2006
Structure and visible photoluminescence of Sm{3+}, Dy{3+} and Tm{3+} doped c-axis oriented AlN films
Liu Fu-Sheng\Liu Quan-Lin\Liang Jing-Kui\et al.
Chin. Phys., Vol: 15, No: 10 , published: 01 October 2006
Катодолюминесценция кристаллов оксида цинка, выращенных гидротермальным методом и подвергнутых термообработке в различных средах
Колониус С.Д./Чукичев М.В./Петров В.И./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2006, No: 9 , published: 30 September 2006
Detecting coupled excitons with microphotoluminescence techniques in bilayer quantum dots
Hideki Gotoh, Haruki Sanada, Hidehiko Kamada, Hidetoshi Nakano, Stephen Hughes, Hiroaki Ando, and Jiro Temmyo
Phys. Rev. B: Condens. Matter, Vol: 74, No: 11 , published: 25 September 2006
Эволюция фононной неравновесности в монокристаллическом ZnSe при гелиевых температурах
Шарков А.И./Галкина Т.И./Кривобок В.С./и др.
Физ. тверд. тела, Vol: 48, No: 9 , published: 22 September 2006
Anisotropy-induced exchange splitting of exciton radiative doublet in CdSe nanocrystals
S. V. Goupalov
Phys. Rev. B: Condens. Matter, Vol: 74, No: 11 , published: 11 September 2006
Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111)
Ding Zhi-Bo\Yao Shu-De\Wang Kun\Cheng Kai
Acta phys. sin., Vol: 55, No: 6 , published: 28 August 2006
Theoretical analysis of laser cooling of Tm3+-doped fiber
Sun Hai-Sheng\Jia You-Hua\Ji Xiang-Ming\Yin Jian-Ping
Acta phys. sin., Vol: 55, No: 6 , published: 28 August 2006
Analysis of Time-Resolved Donor-Acceptor Photoluminescence of N-Doped ZnO
Takayuki Makino, Atsushi Tsukazaki, Akira Ohtomo, M. Kawasaki and Hideomi Koinuma
J. Phys. Soc. Jpn., Vol: 75, No: 9 , published: 25 August 2006
Определение параметров и характеристик электролюминесценции в тонкопленочных излучателях на основе ZnS:Mn
Гурин Н.Т./Сабитов О.Ю.
Ж. техн. физ., Vol: 76, No: 8 , published: 22 August 2006
Вклад внутренних и поверхностных состояний носителей заряда в спектры излучения квантовых точек CdS в боросиликатном стекле
Бондарь Н.В./Бродин М.С./Тельбиз Г.М.
Физ. и техн. полупроводников , Vol: 40, No: 8 , published: 21 August 2006
Экситонная фотолюминесценция структур с кремниевыми квантовыми ямами
Саченко А.В./Корбутяк Д.В./Крюченко Ю.В./Купчак И.М.
Физ. и техн. полупроводников , Vol: 40, No: 8 , published: 21 August 2006
Флип-чип светодиоды на основе InAs с буферными слоями из InGaAsSb
Зотова Н.В./Ильинская Н.Д./Карандашев С.А./и др.
Физ. и техн. полупроводников , Vol: 40, No: 8 , published: 21 August 2006
Параметр излучательной рекомбинации и внутренний квантовый выход электролюминесценции в кремнии
Саченко А.В./Горбань А.П./Костылев В.П./Соколовский И.О.
Физ. и техн. полупроводников , Vol: 40, No: 8 , published: 21 August 2006
Туннелирование и ударная ионизация в тонкопленочных электролюминесцентных структурах на основе ZnS:Mn
Гурин Н.Т./Афанасьев А.М./Сабитов О.Ю./Рябов Д.В.
Физ. и техн. полупроводников , Vol: 40, No: 8 , published: 21 August 2006
Люминесцентные свойства вертикальных наностержней ZnO, выращенных на Si-подложках (100)
Грузинцев А.Н.\Редькин А.Н.\Маковей З.И.\и др.
Неорган. матер., Vol: 42, No: 8 , published: 09 August 2006
Ultrafast photoluminescence spectroscopy of exciton-exciton annihilation in oligoaniline films with nanoscale ordering
E. Faulques, V. G. Ivanov, G. Jonusauskas, H. Athalin, O. Pyshkin, J. Wéry, F. Massuyeau, and S. Lefrant
Phys. Rev. B: Condens. Matter, Vol: 74, No: 7 , published: 04 August 2006
Compositional disorder in GaAs1–xNx:H investigated by photoluminescence
M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
Phys. Rev. B: Condens. Matter, Vol: 74, No: 8 , published: 04 August 2006
Optical Evaluation of Silicon Nanoparticles Prepared by Arc Discharge Method in Liquid Nitrogen
Mikihiro Kobayashi, Shu-Man Liu, Seiichi Sato, Hiroshi Yao and Keisaku Kimura
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 8A , published: 04 August 2006
Strain-engineered photoluminescence of silicon nanoclusters
X.-H. Peng, S. Ganti, A. Alizadeh, P. Sharma, S. K. Kumar, and S. K. Nayak
Phys. Rev. B: Condens. Matter, Vol: 74, No: 3 , published: 27 July 2006
Luminescence quenching of tetracene films adsorbed on an ultrathin alumina AlOx layer on Ni3Al(111)
Andreas Langner, Yang Su, and Moritz Sokolowski
Phys. Rev. B: Condens. Matter, Vol: 74, No: 4 , published: 27 July 2006
Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN
D. Karaiskaj, A. Mascarenhas, M. Adamcyk, E. C. Young, and T. Tiedje
Phys. Rev. B: Condens. Matter, Vol: 74, No: 3 , published: 19 July 2006
Optical and electrical properties of ZnO/PS heterostructure
Zhao Bo\Li Qingshan\Zhang Ning\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 7 , published: 03 July 2006
Effect of growth temperature on properties of ZnO thin films
Su Hongbo\Dai Jiangnan\Pu Yong\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 7 , published: 03 July 2006
Formation of a single-layer Si nanostructure and its luminescence characteristics
Cen Zhanghong/Xu Jun/Li Xin/et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 6 , published: 21 June 2006
Recombination width and external quantum efficiency in organic electro-phosphorescent devices
Dai Guozhang\Li Hogjian\Dai Xiaoyu\et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 27, No: 5 , published: 30 May 2006
Сенсибилизация люминесценции вюрцитных кристаллов GaN, легированных Eu и дополнительно введенной примесью Zn
Криволапчук В.В.\Мездрогина М.М.\Кожанова Ю.В.\Родин С.Н.
Физ. и техн. полупроводников , Vol: 40, No: 9 , published: 12 May 2006
Структурные дефекты на гетерограницах и фотолюминесцентные свойства эпитаксиальных слоев GaN и AlGaN/GaN, выращенных на сапфире
Кладько В.П.\Чорненький С.В.\Наумов А.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 9 , published: 12 May 2006
Циркулярно поляризованная фотолюминесценция, связанная с _L(+)-центрами в квантовых ямах GaAs/AlGaAs
Петров П.В.\Иванов Ю.Л.\Романов К.С.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 9 , published: 12 May 2006
Гамма- и электронно-лучевое модифицирование цинкосульфидных люминофоров
Сычев М.М.\Комаров Е.В.\Григорьев Л.В.\и др.
Физ. и техн. полупроводников , Vol: 40, No: 9 , published: 12 May 2006
Механизмы электролюминесценции в кремниевых наноструктурах на основе композитных слоев SiOxNy(Si)
Бару В.Г.\Житов В.А.\Захаров Л.Ю.\и др.
Микроэлектроника, Vol: 35, No: 2 , published: 10 April 2006
Образование дефектов в халькопиритном полупроводниковом соединении CuInSe[2] при облучении электронами
Мудрый А.В.\Иванюкович А.В.\Якушев М.В.\и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2006, No: 4 , published: 01 January 2006
Люминесцентные свойства халькогенидных стекол систем Ga_-Ge_-S:Er{3+} и Ga_-Ge_-Si_-S:Er{3+}
Шарова И.С.\Маньшина А.А.\Иванова Т.Ю.\Поволоцкий А.В.
Вестн. С.-Петербург. ун-та. Сер. 4, Vol: 2006, No: 4 , published: 01 January 2006
Полупроводниковое алмазное острие для комбинированной сканирующей зондовой микроскопии
Лысенко О.Г.\Новиков Н.В.\Гонтарь А.Г.\и др.
Сверхтверд. матер., Vol: 2006, No: 6 , published: 01 January 2006
О механизме излучения в красной полосе фотолюминесценции пористого кремния
Агекян В.Ф.\Степанов А.Ю.
Физ. тверд. тела, Vol: 45, No: 10 , published: 10 August 2005
Infrared photoluminescence from TlGaSA[2] layered single crystals
Yuksek N.S./Gasanly N.M./Aydinli A./et al.
Cryst. Res. Technol., Vol: 39, No: 9 , published: 07 May 2005
Time-resolved photoluminescence spectra of (Al[x]Ga[1_-x])[0.51]In[0.49]P (x=0.29) alloy
Lu Yi jun/Gao Yu lin/Zheng Jian sheng/et al.
Fizika. A, Vol: 12, No: 1-4 , published: 09 April 2005
Can chemically etched germanium of germanium nanocrystals emit visible photoluminescence?
Kartopu G./Karavanskii V.A./Serincan U./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
Photoluminescence mechanisms of Tb{3+}-doped porous GaP
Elhouichet H./Oueslati M./Lorrain N./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
Structural and light-emission modification in chemically-etched porous silicon
Navarro-Urrios D./Perez-Padron C./Lorenzo E./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch
De Vascancelos Elder A./Da Silva E.F., Jr./Dos Santos B.E.C.A./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
On the mechanism of photodegradation of porous silicon in oxygen-containing ambient
Saren A.A./Kuznetsov S.N./Pikulev V.B./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
Raman measurements on nanocolumnar ZnO crystals
Mari B./Cembrero J./Manjon F.J./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
Properties of cubic GaN films obtained by nitridation of porous GaAs(001)
Kidalov V.V./Sukach G.A./Revenko A.S./Bayda A.D.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
Cathodoluminescent properties of tin dioxise sol-gel doped with Tb{3+} and Eu{3+} grown in porous silicon
Moadhen A./Elhouichet H./Jardin C./et al.
Phys. Status Solidi A, Vol: 202, No: 8 , published: 01 April 2005
Structural and optical properties of InP quantum dots grown on GaAs(001)
De Godoy M.P.F.\Nakaema M.K.K.\Lopes J.M.J.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Photoluminescence of nanocrystals embedded in oxide matrices
Estrada C.\Gonzalez J.A.\Kunold A.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Photoluminescence energy trend for ground and excited states in InAs quantum dots in InGaAs/GaAs QW structures
Velazquez Lozada E.\Torchynska T.V.\Dybiec M.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Photoluminescence spectroscopy and transport electrical measurments reveal the quantized features of Si nanocrystals embedded in an ultra thin SiO[2] layer
Dumas C.\Grisolia J.\Carrada M.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Various photoluminescence properties observed in a GaAs/AlAs asymmetric double-quantum-well superlattice
Ohtani Naoki\Hosoda Makoto
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Photoluminescent temperature dependence of doped parabolic quantum wells
Tabata A.\Martins M.R.\Oliveira J.B.B.\et al.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Ballistic effect and optical properties of Si nanocrystallite structures
Torchynska T.V.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Effect of electric field on recombination of self-trapped excitons in silicon nanocrystals
Vandyshev E.N.\Zhuravlev K.S.
Phys. Status Solidi C, Vol: 4, No: 2 , published: 02 February 2005
Структура, примесный состав и фотолюминесценция механически полированных слоев монокристаллического кремния
Баталов Р.И.\Баязитов Р.М.\Хуснуллин Н.М.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Модификация центров дислокационной люминесценции в кремнии под влиянием кислорода
Штейнман Э.А.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
О влиянии процесса коалесценции и характера исходного оксида на фотолюминесценцию ионно-синтезированных нанокристаллов Si в SiO2
Тетельбаум Д.И.\Горшков О.Н.\Касаткин А.П.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Фотолюминесценция нанокристаллического кремния, полученного методом имплантации ионов инертных газов
Ежевский А.А.\Лебедев М.Ю.\Морозов С.В.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Влияние скорости осаждения Ge на рост и фотолюминесценцию самоформирующихся островков Ge(Si)/Si(001)
Востоков Н.В.\Красильник З.Ф.\Лобанов Д.Н.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Морфологическая перестройка слоя германия на кремнии при низких температурах молекулярно-пучковой эпитаксии
Бурбаев Т.М.\Курбатов В.А.\Рзаев М.М.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Фотолюминесценция квантовых точек германия, выращенных в кремнии на субмонослое SiO2
Шамирзаев Т.С.\Сексенбаев М.С.\Журавлев К.С.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Спектроскопия возбуждения эрбиевой фотолюминесценции в эпитаксиальных структурах Si:Er
Андреев Б.А.\Красильник З.Ф.\Яблонский А.Н.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Анализ коэффициента усиления и исследование люминесцентных свойств гетероструктур S/Si1-xGex:Er/Si, полученных методом сублимационной молекулярно-лучевой эпитаксии в газовой фазе
Красильникова Л.В.\Степихова М.В.\Дроздов Ю.Н.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Влияние неоднородностей диэлектрической проницаемости твердотельной матрицы на ширину спектра люминесценции ионов эрбия
Тетеруков С.А.\Лисаченко М.Г.\Шалыгина О.А.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Возбуждение эрбия в матрице SiO2:Si-ne при импульсной накачке
Гусев О.Б.\Войдак М.\Клик М.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Светоизлучающие структуры Si:Er, полученные методом молекулярно-лучевой эпитаксии: влияние условий эпитаксиального роста на концентрацию примесей и фотолюминесценцию
Соболев Н.А.\Денисов Д.В.\Емельянов А.М.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Светоизлучающие структуры Si:Er, полученные методом молекулярно-лучевой эпитаксии: влияние имплантации и отжига на люминесцентные свойства
Соболев Н.А.\Денисов Д.В.\Емельянов А.М.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Люминесценция ионов эрбия в слоях кремниевых нанокристаллов в матрице диоксида кремния при сильном оптическом возбуждении
Тимошенко В.Ю.\Шалыгина О.А.\Лисаченко М.Г.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Люминесценция в тонких пленках фталоцианина
Пахомов Г.Л.\Гапонова Д.М.\Лукьянов А.Ю.\Леонов Е.С.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Особенности температурной зависимости фотолюминесценции сверхрешеток квантовых точек CdTe/ZnTe
Багаев В.С.\Онищенко Е.Е.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Сечения возбуждения и девозбуждения излучающих нанокластеров в кремнии, легированном редкоземельными элементами
Кривелевич С.А.\Маковийчук М.И.\Селюков Р.В.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Фотоэлектрические свойства и электролюминесценция p-i-n-диодов на основе гетероструктур с самоорганизованными нанокластерами GeSi/Si
Максимов Г.А.\Красильник З.Ф.\Филатов Д.О.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Эффективное сечение возбуждения и время жизни ионов Er3+ в светодиодах на основе Si:Er, полученных методом сублимационной молекулярно-лучевой эпитаксии
Ремизов Д.Ю.\Шмагин В.Б.\Антонов А.В.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Электролюминесценция ионов Er3+ в режиме пробоя диодной структуры p+-Si/n-Si:Er/n+-Si
Шмагин В.Б.\Ремизов Д.Ю.\Оболенский С.В.\и др.
Физ. тверд. тела, Vol: 47, No: 1 , published: 04 January 2005
Влияние гидростатического давления на спектры фотолюминесценции двумерных массивов планарно-упорядоченных квантовых точек InAs/GaAs
Гайсин В.А.\Новиков Б.В.\Талалаев В.Г.\и др.
Вестн. С.-Петербург. ун-та. Сер. 4, Vol: 2005, No: 3 , published: 01 January 2005
Новый метод анализа спектров фотолюминесценции твердых растворов CdS[1_-x]Se, с сосуществованием композиционного и структурного беспорядка
Григорьева Н.Р.\Григорьев Р.В.\Новиков Б.В.
Вестн. С.-Петербург. ун-та. Сер. 4, Vol: 2005, No: 3 , published: 01 January 2005
Влияние гидростатического давления на спектры фотолюминесценции квантовых точек InAs/AlAs
Гайсин В.А.\Кулинкин Б.С.\Убыйвовк Е.В.\и др.
Вестн. С.-Петербург. ун-та. Сер. 4, Vol: 2005, No: 3 , published: 01 January 2005
Особенности рентгенофлуоресцентного определения железа, ионно-имплантированного в монокристаллический кремний
Хуснулин Н.М.\Ивойлов Н.Г.\Баталов Р.И.\и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2005, No: 12 , published: 01 January 2005
Фотолюминесцентная диагностика полупроводниковых транзисторных структур на основе арсенида галлия и его соединений
Яременко Н.Г.\Страхов В.А.\Карачевцева М.В.
Успехи соврем. радиоэлектрон., Vol: 2005, No: 12 , published: 01 January 2005
Интерпретация фотолюминесценции в видимой области спектра взвешенных в этаноле разновеликих наночастиц кремния (Si) с помощью модели классического гармонического осциллятора Лоренца
Оглуздин В.Е.
Кpатк. сообщ. по физ. ФИAН, Vol: 2003, No: 12 , published: 01 January 2003
Экситонная спектроскопия радиационных комплексов в кремнии
Каминский А.С.
Успехи соврем. радиоэлектрон., Vol: 2003, No: 8 , published: 01 January 2003
Влияние состояния поверхности монокристаллов CdTe на процессы аннигиляции носителей заряда
Ткачук П.Н.\Ткачук В.И.\Раранский Н.Д.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2003, No: 8 , published: 01 January 2003
Современные полупроводниковые лазеры на квантовых точках
Максимов М.В.\Ковш А.Р.\Леденцов Н.Н.
Петербург. ж. электрон., Vol: 2003, No: 4 , published: 01 January 2003
Кинетический механизм ионолюминесценции в представлении многоквантового колебательно-электронного перехода
Гранкин Д.В.\Бажин А.И.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2003, No: 9 , published: 01 January 2003
Activation energy of the electron-beam-stimulated quenching of photoluminescence in porous silicon
Kostishko B.M., Guseva M.B., Khvostov V.V. et al.
Phys. Low-Dim.struct., Vol: 1999, No: 7-8 , published: 01 January 1999
Temperature and size dependence of the photoluminescence proeprties of CdSSe nanocrystallites in borosilicate glass
Baru V.G., Jitov V.A., Chernushich A.P., Zakharov L.Yu.
Phys. Low-Dim.struct., Vol: 1999, No: 7-8 , published: 01 January 1999
Photoluminescence and degradationproperties of the carbonized proous silicon
Kostishko B.M., Atazhanov Sh.R., Mikov S.N. et al.
Phys. Low-Dim.struct., Vol: 1999, No: 7-8 , published: 01 January 1999
Влияние технологических режимов эпитаксии на порог вынужденного излучения теллурида свинца
Талалаев В.Г., Новиков Б.В., Воробьев В.С., Томм И.В.
Вестн. С.-Петербург. ун-та. Сер. 4, Vol: 1999, No: 4 , published: 01 January 1999
Люминесценция центров, связанных с ионами Yb{3+}, в квантово-размерных структурах на основе GaAs/GaAlAs
Коннов В.М., Казаков И.П., Лойко Н.Н. и др.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1999, No: 7 , published: 01 January 1999
Редкоземельное излучение пленок GaAs и Al[x]Ga[1-x]As, выращенных и легированных Yb методом молекулярно-лучевой эпитаксии
Коннов В.М., Лойко Н.Н., Гилинский А.М. и др.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1999, No: 8 , published: 01 January 1999
Исследование люминесцентных свойств кристаллов ZnS:Al, отожженных в расплавах висмута
Назаров М.В., Коротков В.А., Брук Л.И. и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1999, No: 10 , published: 01 January 1999
Влияние поверхностной рекомбинации на динамику межзонной люминесценции в монокристаллических пластинах кремния
Петренко А.Б., Столяров М.Н., Тимошенко В.Ю.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1999, No: 5-6 , published: 01 January 1999
Electroluminescence from quantum dots in n-type porous silicon
Babanov Yu.E., Buchin E.Yu., Prokaznikov A.V. et al.
Phys. Low-Dim.struct., Vol: 1999, No: 7-8 , published: 01 January 1999
Катодолюминесцентные исследования гомоэпитаксиальных слоев ZnSe, выращенных методом парофазной эпитаксии из элементоорганических соединений
Козловский В.И., Коростелин Ю.В., Крысф А.Б. и др.
Кpатк. сообщ. по физ. ФИAН, Vol: 1999, No: 4 , published: 01 January 1999
Оптические свойства ZnS и ZnS:Ag и их изменение при облучении электронами
Михайлов М.М., Владимиров В.М., Власов В.А.
Физ. и химия обраб. матер., Vol: 1999, No: 5 , published: 01 January 1999
Estimation of spontaneous emission factor for semiconductor superluminescent diodes
Yongsheng Zhao et al.
Acta opt. sin=Guangxue xuebao , Vol: 19, No: 4 , 1999
Влияние полей случайно расположенных в кристалле полупроводника заряженных центров на электронную структуру нейтральных акцепторов и поляризацию люминесценции при переходах зона проводимости-акцептор
Осипов Е.Б., Воронов О.В., Сорокина Н.О., Борисов В.Б.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Physical of dressed excitons in the semiconductor microcavity
Liu S., Lin S., Wang Q.
Acta phys. sin. Overseas Ed., Vol: 8, No: 7 , 1999
Physical characteristics of electromagnetic levitation processing
Wang N., Xie W., Wei B.
Acta phys. sin. Overseas Ed., Vol: 8, No: 7 , 1999
Effect of dopant on the uniformity of InAs self-organized quantum dots
Wang H., Zhu H., Feng S., et al.
Acta phys. sin. Overseas Ed., Vol: 8, No: 8 , 1999
Photoluminescence from erbium implanted silicon-rich SiO[2]
Hongbing Lei, Qinqing Yang, Jialian Zhu et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 1 , 1999
Temperature-induced turn-over of well and barrier layers in ZnSe/Zn[0.84]Mn[0.16]Se superlattices
Li Guohua, Zhu Zuoming, Liu Nanzhu et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 11 , 1999
Infrared extinction in CdTe single crystal
Yang Bailiang, Yukic Ishikawa, Minoru Isshiki
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 11 , 1999
Temperature effect on long wavelength InP/AlGaInAs/InP growth by LP-MOCVD
Bo Chen, Wei Wang
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 12 , 1999
Fluorescence properties of Cd(OH)[2]-activated CdS and CuS-coated CdS nanocrystals
Hongming Chen, Xinfan Huang, Ling Xu et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 12 , 1999
Room-temperature visible photoluminescence of C-doped SiO[2] films
Yinyue Wang, Hua Xue, Yongping Guo et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 2 , 1999
Study of optical characteristics of cubic GaN grown on GaAs (001) by MOCVD
Xiaoling Xun, Hui Yang, Guohua Li et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 3 , 1999
Silicon dioxide encapsulated anneal enhanced quantum well intermixing for InP based laser material
Dejun Han, Hongliang Zhu, Simmons J.G., Zhao Q.C.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 3 , 1999
Growth and interface properties of InAlGaAs/GaAs quantum wells
Lianxi Zheng, Xiongwei Hu, Qin Han
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 4 , 1999
Theoretical and experimental analysis of ZnS photoluminescence visible spectrum
Peikrishvili D., Kekelidze N., Butkhuzi T., et al.
Bull. Georg. Nat. Acad. Sci., Vol: 160, No: 1 , 1999
Lazer spectroscopy of semiconductors
Gotoshia S.
Bull. Georg. Nat. Acad. Sci., Vol: 159, No: 2 , 1999
Room-temperature luminescence of AgBr quantum dots
Comor Mirjana I., Nedeljkovic Jovan M.
Chem. Phys. Lett., Vol: 299, No: 2 , 1999
Femtosecond study of luminescence dynamics of two kinds of soluble polyacetylene derivatives
Hui Wang et al.
Acta opt. sin=Guangxue xuebao , Vol: 19, No: 3 , 1999
Nonlinear optical characteristic of photoluminescence from porous silicon
Bingyan Ren et al.
Acta opt. sin=Guangxue xuebao , Vol: 19, No: 8 , 1999
Photoluminescence study of MBE Hg[0.68]Cd[0.32]Te epilayers
Ronbin Ji et al.
Acta opt. sin=Guangxue xuebao , Vol: 19, No: 9 , 1999
Optical properties of II-VI diluted magnetic semiconductor ZnTe/Zn[1-x]Mn[x]Te superlattices
Li Hai-Tao, Chen Chen-Jia, Wang Xue-Zhong et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 18, No: 2 , 1999
Light emitting modes of InGaP microdisks by using scanning near-field optical microscopy
Zhang Yu, Xin Yong-Chun, Zhu Xing et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 18, No: 3 , 1999
Piezoelectric InGaAs/AlGaAs laser with intracavity absorber
Khoo E.A., Pabla A.S., Woodhead J. et al.
IEE Proc. Optoelectron., Vol: 146, No: 1 , 1999
Optical characterisation of quantum well infra-red detector structures
Guzman A., Sanchez-Rojas J.L., Tijero J.M.G. et al.
IEE Proc. Optoelectron., Vol: 146, No: 2 , 1999
Carrier dynamics in GaAs/AlAs quantum wire arrays
Gopal A.Venu, Kumar Rajesh, Sengurlekar A.S. et al.
Indian J. Pure and Appl. Phys., Vol: 37, No: 8 , 1999
Metalorganic chemical vapor deposition growth of GaAs:Er using Er(C[4]H[9]C[5]H[4])[3]
Fang X.M., Li Y., Langer D.W., et al.
J. Electron. Mater., Vol: 23, No: 12 , 1999
Experimental studies of metal/InP interfaces formed at room temperature and 77K
He L., Shi Z.Q., Anderson W.A.
J. Electron. Mater., Vol: 23, No: 12 , 1999
Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy
Tran C.A., Graham J.T., Brebner J.L., et al.
J. Electron. Mater., Vol: 23, No: 12 , 1999
Photoluminescence evaluation of pseudomorphic high electron mobility transistor device wafers
Martin P.A., Ballingall J.M., Ho P., et al.
J. Electron. Mater., Vol: 23, No: 12 , 1999
Effects of H[2]/NH[E] flow-rate ratio on the luminesent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
Yang Chien-Cheng, Koh Pao-Ling, Wu Meng-Chei et al.
J. Electron. Mater., Vol: 28, No: 10 , 1999
Photoluminescences from Al[x]Ga[1-x]P liquid phase epitaxial layers
Yu T.-J., Matsuo T., Sauto K., Nishizawa J.
J. Electron. Mater., Vol: 28, No: 10 , 1999
Photoluminescence of Be implanted Si-doped GaAs
Kroon R.E., Botha J.R., Neethling J.H. et al.
J. Electron. Mater., Vol: 28, No: 12 , 1999
Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
Sun W.D., Pollack Fred H., Folkes Patrick A. et al.
J. Electron. Mater., Vol: 28, No: 12 , 1999
Shape stabilization and size equilization of InGaAs self-organized quantum dots
Xie Qianghua, Brown J.L., Jones R.L. et al.
J. Electron. Mater., Vol: 28, No: 12 , 1999
Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
Uchida Kenji, Kawata Masahiko, Yang Tao et al.
J. Electron. Mater., Vol: 28, No: 3 , 1999
Magnetic resonance studies of InGaN-based quantum well diodes
Carlos W.E., Glaser E.R., Kennedy T.A., Nakamura Shuji
J. Electron. Mater., Vol: 28, No: 3 , 1999
Annealing studies of photoluminescence spectra from multiple Er{3+} centers in Er-implanted GaN
Kim S., Rhee S.J., Li X. et al.
J. Electron. Mater., Vol: 28, No: 3 , 1999
Pulsed laser deposition and processing of wide band gap semiconductors and related materials
Vispute R.D., Choopun S., Enck R. et al.
J. Electron. Mater., Vol: 28, No: 3 , 1999
Electronic coupling and structural ordering of quantum dots using InAs quantum dot columns (invited paper)
Solomon G.S.
J. Electron. Mater., Vol: 28, No: 5 , 1999
InGaAs quantum dots formed in terrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition
Sakuma Yoshiki, Shima Masashi, Awano Yuji et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
The shape of self-assembled InAs islands grown by moelcualr beam epitaxy
Lee Hao, Yang Weidong, Sercel Peter C., Norman A.G.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures
Brunkov P.N., Kovsh A.R., Ustinov V.M. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Optical and electrical properties of Al[2]O[3] films containing silicon nanocrystals
Yanagiya S., Ishida M.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Structural and infrared absorption properties of self-organized InGaAsGaAs quantum dots multilayers
Zhuang Q.D., Li J.M., Zeng Y.P. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices
Strassburg M., Heitz R., Turck V. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Temperature dependent optical properties of self-organized InAs/пфФы йгфтегь вщеы
Heitz R., Mukhametzhanov I., Madhukar A. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
Zhou W., Xu B., Xu H.Z. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition
Tstsul`nikov A.F., Volovik B.V., Ledentsov N.N. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
Spatially resolved spectrscopy on single self-assembled quantum dots
Zrenner A., Markmann M., Beham E. et al.
J. Electron. Mater., Vol: 28, No: 5 , 1999
New developments in the heteroepitaxial growth of be-chalcogenides based semiconducting alloys
Chauvet C., Busquet V., Tournie E., Faurie J.P.
J. Electron. Mater., Vol: 28, No: 6 , 1999
Study of CdSSe:V and CdMnTe:V photoreractive effect
Chattopadhyay K., Pour K.M., Egarievwe S.U. et al.
J. Electron. Mater., Vol: 28, No: 6 , 1999
Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe:Cr{2+}
Rablau C.I., Ndap J.-O., Ma X. et al.
J. Electron. Mater., Vol: 28, No: 6 , 1999
Effect of compositional disorder on the optical proeprties of Cd[1-x]Zn[x]Te
Suzuki K., Seto S., Imai K. et al.
J. Electron. Mater., Vol: 28, No: 6 , 1999
Solid source MBE growth of InAsP/InP quantum wells
Dagnall Georgiana, Shen Jeng-Jung, Kim Tong-Ho et al.
J. Electron. Mater., Vol: 28, No: 8 , 1999
Effect of gas feeding methods on optical propertis of GaN grown by rapid thermal chemical vapor deposition reactor
Kim Sun-Jung, Seo Young Hun, Nahm Kee Suk et al.
J. Electron. Mater., Vol: 28, No: 8 , 1999
Lifetimes of singlet and triplet excitons in β-ZnP[2]
Arimoto Osamu, Miki Daichi, Nakamura Kaixo et al.
J. Phys. Soc. Jpn., Vol: 68, No: 6 , 1999
Directionally enhanced photoluminescence from distributed feedback cavity polaritons
Fujita Tohru, Ishihara Teruya
J. Phys. Soc. Jpn., Vol: 68, No: 9 , 1999
Blue luminescence from photochemically etched silicon
Yamamoto Naokatsu, Takai Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 10 , 1999
Molecular beam epitaxial growth of InAs quantum dots directly on silicon
Hansen Lars, Bensing Frank, Waag Andreas
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11 , 1999
Strain effect on the band structure of InAs/GaAs quantum dots
Zhu Haijun, Feng Songlin, Jiang Desheng et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11 , 1999
Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be
Ichiryu Dai, Sano Eriko, Horikoshi Yoshiji
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Band line-up of InAsP/InAlGaAs quantum well
Anan Takayoshi, Nishi Kenichi, Tokutome Keiichi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
High-quality GaAs[x]P[1-x]/In[0.13]Ga[0.87]P quantum well structure grown in Si substrate with a very few threading dislocations
Fujimoto Yasuhiro, Yonezu Hiroo, Irino Satoshi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Novel GaAs quantum wire and dot arrays by hydrogen-assisted molecular beam epitaxy on high-index substrates
Ploog Klaus H., Notzel Richard
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Spatially resolved spectroscopy of single and coupled quantum dots
Abstreiter Gerhard, Bichler Max, Markmann Markus et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
High-temperature metalorganic vapor phase epitaxial growth of GaAs/AlGaAs quantum structures in tetrahedral-shaped recesses on GaAs (111)B substrates
Tsujikawa Tomoko, Irisawa Toshifumi, Yaguchi Hiroyuki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Scanning transmission electron microscopy (STEM) study of InAs/GaAs quantum dots
Murray Ray, Malik Surama, Siverns Philip et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Highly uniform and small InP/GaInP self-assembled quantum dots grown by metal-organic vapor phase epitaxy
Ren Hong-Wen, Sugisaki Mitsuru, Lee Jeong-Sik et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
1.3 μm Room tempeature emission from InAs/GaAs self-assembled quantum dots
Murray Ray, Childs David, Malik Surama et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Microscopic photoluminescence study of InAs single quantum dots grown on (100) GaAs
Asaoka Kazuya, Ohno Yutaka, Kishimoto Shgieru, Mizutani Takashi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Photoluminescence characteristics of self-assembled In[0.5]Ga[0.5]As quantum dots on vicinal GaAs substrates
Yeh Nien-Tze, Nee Tzer-En, Shiao Po-Wen et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Excitation density and temperature dependent photoluminscence of InGaAs self-assembled quantum dots
Chang Wen-Hao, Hsu Tsu-Min, Tsai Kuei-Fen et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates
Tsai Fu-Yi, Lee Chien-Ping
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Optical and transport properties of CdSe/ZnSe self-organized nanostrucures: 1-dimensional versus 3-dimensional quantum confinement
Toropov Alexei A., Ivanov Sergei V., Shubina Tatiana V. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Persistent spectral-hole-burning in semiconductor quantum dots and its application to spectroscopy
Masumoto Yasuaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Effect of surface termination on the electronic states in nano-crystalline porous silicon
Matsumoto Takahiro, Arata Goh, Nair Selvakumar V., Masumoto Yasuaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Red light emitting injection lasers with vertically-aligned InP/GaInP quantum dots
Riedl Thomas, Fehrenbacher Elvira, Zundel Markus K. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Room-temperature operation of In[0.5]Ga[0.5] as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy
Nee Tzer-En, Yeh Nien-Tze, Shiao Po-Wen et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 18 , 1999
Reduction of spontaneous surface segregation in (InP)[2]/(CaP)[2] quantum wells grown on tilted substrates
Cheng Yi-Cheng, Tai Kuochou, Chou Shu-Tsun et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A , 1999
Gas-source molecular beam epitaxial growth of In[1-x]Ga[x]P on GaAs using tertiarybutylphosphine
Sai Hironobu, Fujikura Hajime, Hasegawa Hideki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A , 1999
Vibronic fine structure found in the blue luminescence from silicon nanocolloids
Kimura Keisaku, Iwasaki Shingo
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Resonant raman effect on a CuGaSe[2] crystal grown by the traveling heater method
Wakita Kazuki, Miyazaki Takayuki, Kikuno Yasuhiro et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots
Gontijo I., Buller G.S., Massa J.S. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Near-infrared photoluminescence in Mo-doped single crystals of CuAlS[2] (Short Note)
Nishi Takao, Ishibashi Naohiro, Katsumata Yuji, Sato Katsuaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
Krawczyk Stanislas, Bejar Moez, Khoukh Abdelaziz et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Cqrrier-relaxation process in time-resolved up-converted photoluminescence at ordered (Al[0.5]Ga[0.5])[0.5]In[0.5]P and GaAs heterointerface
Yamashita Kenichi, Kita Takashi, Nishino Taneo, Oestreich Michael
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Pressure dependence of photoluminescence in GaAs/Partially ordered GaInP interface
Kobayashi Toshihiko, Ohmae Takashi, Uchida Kazuo, Nakahara Jun-ichiro
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Thermal quenching of Er-related luminescence in GaInP doped with Er by orgnaometallic vapor phase epitaxy
Fujiwara Yasufumi, Ito Takashi, Ichida Masao et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Structural and energy-gap characterization of metalorganic-vapor-phase-epitaxy-grown InAsBi
Okamoto Hiroshi, Oe Kunishige
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Properties of In[0.52]Al[0.48]As and In[0.53]Ga[0.47]As/In[0.52]Al[0.48]As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
Kawamura Yuichi, Kamada Akihiko, Yoshimatsu Kiyotune et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Size-controlled formation of decananometer InGaAs quantum wires by selective molecular beam epitaxy on InP patterned substrates
Muranaka Tsutomu, Okada Hiroshi, Fujikura Hajime, Hasegawa Hideki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices
Fudeta Mayuko, Asahi Hajime, Kim Seong-Jin et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Tailoring of energy levels in strain-induced quantum dots
Ahopelto Jouni, Soapnen Markku, Lipsanen Harri
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Effect of size fluctuations on the photoluminescence spectral linewidth of closely stacked InAs self-assembled quantum dot structures
Endoh Akira, Nakata Yoshiaki, Sugiyama Yoshihiro et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
The procedure to realize two-dimensional quantum dot superlattices: From incoherently coupled to coherently coupled quantum dot arrays
Lan Sheng, Akahane Kouichi, Jang Kee-Youn et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Temperature dependence of luminescence decay time of InP quantum disks
Okuno Tsuyoshi, Ren Hong-Wen, Sugisaki Mitsuru et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Effect of InP passivatin on carrier recombination in In[x]Ga[1-x]As/GaAs surface quantum wells (Short note)
Lipsanen Harri, Sopanen Markku, Ahopelto Jouni et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy
Mozume Teruo, Yoshida Haruhiko, Neogi Arup, Kudo Makoto
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Optically detected far-infrared magnetoabsorption in InGaAs
Nakata Hiroyasu, Shimizu Nobuhiro, Ohyama Tyuzi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4A , 1999
High-quality InGaAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy
Kitada Takahiro, Ohashi Masanobu, Shimomura Satoshi, Hiyamizu Satoshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4A , 1999
Effect of lattice strain on exciton energy of AgGaS[2] epitaxial layers on GaAs (100)
Kurasawa Masaki, Tsuboi Nozomu, Kobayashi Satoshi, Kaneko Futao
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4A , 1999
Light-emitting substituted polyacetylenes
Sun Runguang, Zheng Qianbing, Zhang Xianmin et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4A , 1999
Lateral composition modulation induced optical anisotropy in InP/GaInP quantum dot system
Ren Hong-Wen, Sugisaki Misturu, Sugou Shigeo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure
Cho Taehee, Kim Jong-Wook, Oh Jae-Eung et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Excitonic luminescence from self-organized quantum dots of CdTe grown by molecular beam epitaxy
Kuroda Shinji, Terai Yoshikazu, Takita Koki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Interplay of excitonic radiative recombination and ionization in photocurrent spectra of thick barrier GaAs/AlAs multiple quantum wells
Kawasaki Koji, Imazawa Masaaki, Imanishi Toshio et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Growth and characterization of nitrogen-doped MgSe/ZnSeTe superlattice quasi-quaternary in InP substrates and fabrication of light emitting diodes
Shinozaki Wataru, Nomura Ichirou, Shimbo Hiroyuki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Growth condition dependence of the photoluminescence properties of In[x]Ga[1-x]N/In[y]Ga[1-y]N multiple quantum wells grown by MOCVD
Harris Janet C., Brisset Helene, Someya Takao, Arakawa Yasuhiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Coherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure: Suppression of phase relaxation and a deep quantum beat
Matsusue Toshio, Akiyama Hidefumi, Saiki Toshiharu et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Luminescence of mixed-mode exciton-polariton in CuGaS[2]
Susaki Masami, Wakita Kazuki, Yamamoto Nobuyuki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Two-dimensional In[0.4]Ga[0.6]As/GaAs quantum dot superlattices realized by self-organized epitaxial growth
Lan Sheng, Akahane Kouichi, Jang Kee-Youn et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Piezoelectric photoacoustic and photoluminescence properties of CuIn[x]Ga[1-x]Se[2] alloys
Yoshino Kenji, Iwamoto Masatoshi, Yokoyama Hirosumi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5B , 1999
Radiative centers in layer semiconductor p-GaSe doped with Mn (Short Note)
Shigetomi Shigeru, Ikari Tetsuo, Nakashima Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Reduction of inhomogeneous broadening of exciton luminescence in Cd[x]Zn[1-x]Se ternary alloys and Cd[x]Zn[1-x]Se-ZnSe multiple quantum wells grown by molecular-beam epitaxy under Se-excess supply
Fujimoto Masakatsu, Shigematsu Hiroshi, Senda Kazuhiko et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Transmission electron microscopy and photoluminescence characterization of InAs quantum wires on vicinal GaAS(110) substrates by molecular beam epitaxy
Torii S., Bando K., Shim B.-R., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Intrinsic polarized emission from InAs/GaAs(311)A quantum dots
Sanguinetti S., Castiglioni S., Grilli E., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Recovery of (411)A superflat interfaces in GaAs/Al[0.3]Ga[0.7]As quantum wells grown on (411)A GaAs substrate by molecular beam epitaxy
Shinohara K., Shimizu Y., Shimomura S., Hiyamizu S.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Transmission electron microscopy and photoluminescence characterization of InAs quantum wires on vicinal GaAS(110) substrates by molecular beam epitaxy
Torii S., Bando K., Shim B.-R., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Intrinsic polarized emission from InAs/GaAs(311)A quantum dots
Sanguinetti S., Castiglioni S., Grilli E., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Recovery of (411)A superflat interfaces in GaAs/Al[0.3]Ga[0.7]As quantum wells grown on (411)A GaAs substrate by molecular beam epitaxy
Shinohara K., Shimizu Y., Shimomura S., Hiyamizu S.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga+In) source
Chu Shucheng, Saisho Tetsuhiro, Fujimura Kazuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantumwells and improvement by a strained buffer layer
Schlenker Dietmar, Pan Zhong, Miyamoto Tomoyuki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
Sharp transmission coefficient in GaAs/AlAs resonant tunneling diodes with (411)A superflat interfaces grown by molecular beam epitaxy
Shinohara Keisuke, Shimomura Satoshi, Hiyamizu Satoshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
High power GaInAsP/InP strained quantum well superluminescent diode with tapered active region
Yamatoya Takeshi, Mori Shota, Koyama Fumio, Iga Kenichi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
Photoluminescence related to the interaction between carriers and structural defects in ZnTe crystals
Garcia Jose Angel, Remon Angel, Munoz Vicente, Triboulet Robert
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
Direct observation of kinetics of dissociation of polaron pairs in electrical field
Nishihara Y., Fujii A., Ozaki M., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 31, No: 7B , 1999
Microphotoluminescence intensity images of InGaN single quantum wells
Someya Takao, Arakawa Yasuhiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11A , 1999
Intermixing characteristics of strained-InGaAs/InGaAsP multiple quantum well structure using impurity-free vacancy diffusion
Park Jung Woo, Kim Hyun Soo, Kim Jung Soo, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11B , 1999
Red emission from Eu-doped GaN studied by photoluminescence and photo-calorimetric spectroscopy
Maruyama Takahiro, Sasaki Hitomi, Morishima Shinichi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11B , 1999
Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy
Damilano Benjamin, Vezian Stephane, Grandjean Nicolas, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Optical transitions of the Mg acceptor in GaN
Hofmann Detlev M., Meyer Bruno K., Leiter Frank, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
An approach to achieve intense photoluminescence of GaN
Shen Xu-Qiang, Aoyagi Yoshinobu
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A-1B , 1999
6H to 3C polytype transformation in silicon carbide
Vlaskina Svitlana I., Shin Dong Hyuk
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A-1B , 1999
Spin relaxation of electrons in graded doping strained GaAs-layer photocathode of polarized electron source
Zhen Wendong, Matsuyama Tetsuya, Horinaka Hiromichi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A-1B , 1999
Excitonic emissions under high excitation of hexagonal GaN single crystal grown by sublimation method
Kurai Satoshi, Kawabe Akira, Sugita Taiichi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Piezoelectric stark-like ladder in GaN/GaInN/GaN heterostructures
Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Improvements of the optical and electrical properties of GaN films by using in-doping method during growth
Shen Xu-Qiang, Ramvall Peter, Riblet Philippe, Aoyagi Yoshinobu
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Characterization of nonuniformity of 6H-SiC wafers by photoluminescence mapping at room temperature
Tajima Michio, Nakane Taketomo, Nakata Toshitake, Watanabe Masanori
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Self-assembling molecular beam epitaxial growth of the InAs quantum dots embedded in deep Al[0.5]Ga[0.5]As barriers
Koike Kazuto, Ohkawa Hiroyuki, Yano Mitsuaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
High-quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source
Chu Shucheng, Saisho Tetsuhiro, Fujimura Kazuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source
Takahashi Noyuki, Kaiya Kazuhiko, Nakamura Takato et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Impact ionization in InAlAs/InP single channel heterojunction field effect transistors
Gautier-Levine Astrid, Teissier Roland, Nezzari Amar et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5B , 1999
Improvement of 1.5 μm photoluminescence from reactive deposition epitaxy (RDE) grown β-FeSi[2] ball sin Si by high temperature annealing
Suemasu Takashi, Iikura Yusuke, Fujii Tetsuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A-6B , 1999
Photostimulated luminescence of CuCl quantum dots in NaCl crystals
Masumoto Yasuaki, Ogasawara Seitaro
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A-6B , 1999
Straight quantum wires self-formed by growing GaP/InP short-period superlattices on GaAs(011) substrate
Kim Seong-Jin, Asahi Hajime, Asami Kumiko et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Photoluminescence studies of hydrogen-passivated Al[0.13]Ga[0.87]As grown on Si substrate by metalorganic chemical vapor deposition
Wang Gang, Ogawa Takashi, Ohtsuka Kiyosi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Decay characteristics of photoluminescence lines in CuGaS[2] crystals
Terasako Tomoaki, Umiji Hiroshi, Tanaka Kunihiko et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Dependence of exciton - longitudinal-optical-phonon interaction energy on well width in Cd[0.2]Zn[0l8]Se/ZnSe multiple-quantum wells
Zheng Ruisheng, Shigematsu Hiroshi, Fujimoto Masakatsu et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Effect of annealing on the impurities of 6H-SiC single crystals optics and quantum electronics
Shin Dong Hyuk, Vlaskina Svitlana I.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8A , 1999
Effects of sodium on CuIn[3]Se[5] thin films
Kimura Ryuhei, Mouri Takuhei, Nakada Tokio, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8B , 1999
Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence
Nishimura Tetsuya, Wang Xue-Lun, Ogura Mutsuo, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8B , 1999
Optical studyof germanium nanostructures grown on a Si(118) vicinal substrate
Bremond G., Serpentini J., Souifi A. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
Sanchez J.J., Tijero J.M.G., Hernando J. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (11)B GaAs substrates
Tsai F.Y., Lee C.P., Shen J. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
Sanchez J.J., Gutierrez M., Gonzalez D. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy
Hiyamizu S., Shimomura S., Kitada T.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Optical and morphological proper;ties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
Sanguinetti S., Miotto A., Castiglioni S. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Optical transitions of Al[0.35]Ga[0.65]As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substrates
Feng J.M., Tateuchi M., Asai K. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Optical properties of type II short-period GaAs/AlAs superlattices under stress effects
Smaoui F., Maaref M., Planel R.
Microelectron. J., Vol: 30, No: 7 , 1999
Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
Borgi K., Hassen F., Maaref H., Daami A., Bremond G.
Microelectron. J., Vol: 30, No: 7 , 1999
Effect of lateral diffusion on the photoluminescence intensity of semiconductor compounds: study of theorical three-dimensional photoluminescence
Benbakhti T., Mehal D., Krawczyk S.K., Bassou G.
Microelectron. J., Vol: 30, No: 7 , 1999
Residual strain mapping in III-V materials by spectrally resolved scanning photoluminescence
Buchheit M., Khoukh A.Bejar M. et al.
Microelectron. J., Vol: 30, No: 7 , 1999
Temperature range for re-emission of carriers in GaAs/Ga[1-x]Al[x]As superlattices
Kraiem S., Hassen F., Sfaxi L., Maaref H.
Microelectron. J., Vol: 30, No: 7 , 1999
Porous silicon: photoluminescence decay in the naonosecond range
M`ghaieth R., Maaref H., Mihalcescu I., Vial J.C.
Microelectron. J., Vol: 30, No: 7 , 1999
Properties of III-V based ferromagnetic semiconductor (Ga[1-x]Mn[x])As: As pressure dependence
Shimizu H., Hayashi T., Nishinaga T., Tanaka M.
Nihon oyo jiki gakkaishi = J. Magn. Soc. Jap., Vol: 23, No: 1-2 , 1999
Zeeman-gap anomaly in photoluminescence from a two-dimensional electron gas in CdTe/(Cd, Mg)Te quantum wells
Takeyama S., Karczewski G., Wojtowicz T., Kossut J., Kunimatsu H., Uchida K., Miura N.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Observation of interband transitions associated with X-valley Landau levels in GaAs/AlAs quantum-well structures
Haetty J., Kioseoglou G., Petrou A., Dutta M., Pamulapati J., Taysing-Lara M.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field
Huang Danhong, Lyo S. K.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Exciton spin thermalization in strained and relaxed Zn[1 - x]Mn[x]Se epilayers
Poweleit C. D., Hodges A. R., Sun T.-B., Smith L. M., Jonker B. T.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Optical properties of InAs quantum dots: Common trends
Alessi M. Grassi, Capizzi M., Bhatti A. S., Frova A., Martelli F., Frigeri P., Bosacchi A., Franchi S.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy
Raymond S., Guo X., Merz J. L., Fafard S.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Carrier dynamics in α-octithiophene solids: Comparison of the transient photoconductivity and excited-state absorption in single-crystal and polycrystalline film
Moses D., Wang J., Dogariu A., Fichou D., Videlot C.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 11 , 1999
Cooling dynamics of excitons in GaN
Hagele D., Zimmermann R., Oestreich M., Hofmann M. R., Ruhle W. W., Meyer B. K., Amano H., Akasaki I.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Observation of combined electron and photon confinement in planar microcavities incorporating quantum wires
Constantin C., Martinet E., Rudra A., Kapon E.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Electron-spin polarization near the Fermi level in n-type modulation-doped semiconductor quantum wells
Triques A. L. C., Urdanivia J., Iikawa F., Maialle M. Z., Brum J. A., Borhgs G.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Photoluminescence of electron-irradiated 4H-SiC
Egilsson T., Henry A., Ivanov I. G., Lindstrom J. L., Janzen E.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Femtosecond luminescence from partly redistributed nonequilibrium electrons in InAs
Nansei H., Tomimoto S., Saito S., Suemoto T.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Photoinduced charge carriers in conjugated polymer-fullerene composites studied with light-induced electron-spin resonance
Dyakonov V., Zoriniants G., Scharber M., Brabec C. J., Janssen R. A. J., Hummelen J. C., Sariciftci N. S.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Photoluminescence in modulation-doped GaAs/Ga[1 - x]Al[x]As heterojunctions
Shen J. X., Oka Y., Hu C. Y., Ossau W., Landwehr G., Friedland K.-J., Hey R., Ploog K., Weimann G.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Chemical equilibrium between excitons, electrons, and negatively charged excitons in semiconductor quantum wells
Siviniant J., Scalbert D., Kavokin A. V., Coquillat D., Lascaray J-P.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Photoluminescence kinetics of indirect excitons in GaAs/Al[x]Ga[1 - x]As coupled quantum wells
Butov L. V., Imamoglu A., Mintsev A. V., Campman K. L., Gossard A. C.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Magnetoluminescence oscillations of a doped (Al,Ga)As/GaAs single heterojunction
Kim Yongmin, Perry C. H., Lee Kyu-Seok, Rickel D. G.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Finely resolved transmission spectra and band structure of two-dimensional photonic crystals using emission from InAs quantum dots
Labilloy D., Benisty H., Weisbuch C., Smith C. J. M., Krauss T. F., Houdre R., Oesterle U.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Optically detected electron paramagnetic resonance of AlN single crystals
Mason P. M., Przybylinska H., Watkins G. D., Choyke W. J., Slack G. A.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Properties of the D[1] bound exciton in 4H-SiC
Egilsson T., Bergman J. P., Ivanov I. G., Henry A., Janzen E.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Exciton-impurity interactions in high-purity InP
Benzaquen R., Leonelli R., Charbonneau S.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Mn spin domains in highly photoexcited (Cd,Mn)Te/(Cd,Mg)Te quantum wells
Tyazhlov M. G., Kulakovskii V. D., Filin A. I., Yakovlev D. R., Waag A., Landwehr G.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Angle dependence of the spontaneous emission from confined optical modes in photonic dots
Gutbrod T., Bayer M., Forchel A., Knipp P. A., Reinecke T. L., Tartakovskii A., Kulakovskii V. D., Gippius N. A., Tikhodeev S. G.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Band-gap renormalization in modulation-doped In[1 - x]Ga[x]As/GaAs V-shaped quantum wires
Rinaldi R., Coli` G., Passaseo A., Cingolani R.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Strong emission from As monolayers in AlSb
Glaser E. R., Kennedy T. A., Bennett B. R., Shanabrook B. V.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Direct evidence of quantum confinement from the size dependence of the photoluminescence of silicon quantum wires
Yu D. P., Bai Z. G., Wang J. J., Zou Y. H., Qian W., Fu J. S., Zhang H. Z., Ding Y., Xiong G. C., You L. P., Xu J., Feng S. Q.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Broadening of the excitonic mobility edge in a macroscopically disordered CdSe/ZnSe short-period superlattice
Toropov A. A., Shubina T. V., Sorokin S. V., Lebedev A. V., Kyutt R. N., Ivanov S. V., Karlsteen M., Willander M., Pozina G. R., Bergman J. P., Monemar B.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Vacancy-migration-mediated disordering in CuPt-ordered (Ga,In)P studied by in situ optical spectroscopy in a transmission electron microscope
Ohno Y., Kawai Y., Takeda S.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si
Carey J. D., Barklie R. C., Donegan J. F., Priolo F., Franzo G., Coffa S.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization
Herz K., Bacher G., Forchel A., Straub H., Brunthaler G., Faschinger W., Bauer G., Vieu C.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires
Oberli D. Y., Dupertuis M.-A., Reinhardt F., Kapon E.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Photoluminescence of negatively charged excitons in high magnetic fields
Hayne M., Jones C. L., Bogaerts R., Riva C., Usher A., Peeters F. M., Herlach F., Moshchalkov V. V., Henini M.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Optical anisotropy in self-assembled InP quantum dots
Sugisaki Mitsuru, Ren Hong-Wen, Nair Selvakumar V., Nishi Kenichi, Sugou Shigeo, Okuno Tsuyoshi, Masumoto Yasuaki
Phys. Rev. B: Condens. Matter, Vol: 59, No: 8 , 1999
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann U., Kunzer M., Obloh H., Maier M., Manz Ch., Ramakrishnan A., Santic B.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 8 , 1999
Magneto-optical effects in photoluminescence of Si nanocrystals
Heckler H., Kovalev D., Polisski G., Zinov`ev N. N., Koch F.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 11 , 1999
Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field
Soubusta J., Grill R., Hlidek P., Zvara M., Smrcka L., Malzer S., Geiselbrecht W., Dohler G. H.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 11 , 1999
Grand canonical equilibrium of two-dimensional electrons confined in asymmetric Al[x]Ga[1 - x]As/GaAs heterostructures in a quantizing magnetic field
Kamal-Saadi M., Raymond A., Elmezouar I., Vicente P., Couzinet B., Etienne B.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 11 , 1999
Strong variation of the exciton g factors in self-assembled In[0.60]Ga[0.40]As quantum dots
Bayer M., Kuther A., Schafer F., Reithmaier J. P., Forchel A.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Nonexponential photon echo decays from nanostructures: Strongly and weakly localized degenerate exciton states
Erland J., Kim J. C., Bonadeo N. H., Steel D. G., Gammon D., Katzer D. S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Screening of coherent LO phonons by interwell plasmon oscillations along the growth direction in GaAs/AlGaAs superlattices
Yee K. J., Yee D. S., Kim D. S., Dekorsy T., Cho G. C., Lim Y. S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Ensemble interactions in strained semiconductor quantum dots
Leon R., Marcinkevicius S., Liao X. Z., Zou J., Cockayne D. J. H., Fafard S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Electronic structure and migrational properties of interstitial zinc in ZnSe
Chow K. H., Watkins G. D.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Effect of Mn{2+} concentration in ZnS nanoparticles on photoluminescence and electron-spin-resonance spectra
Borse P. H., Srinivas D., Shinde R. F., Date S. K., Vogel W., Kulkarni S. K.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Magneto-optics of the spatially separated electron and hole layers in GaAs/Al[x]Ga[1 - x]As coupled quantum wells
Butov L. V., Shashkin A. A., Dolgopolov V. T., Campman K. L., Gossard A. C.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAs/Al[x]Ga[1 - x]As and InGaP[2]/Al[x]Ga[1 - x]As heterostructures
Hohng S. C., Khang D. W., Ahn Y. H., Lee J. Y., Kihm S. Y., Kim D. H., Kim W. S., Woo J. C., Kim D. S., Citrin D. S., Woo D. H., Kim E. K., Kim S. H., Lim K. S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Charged excitonic complexes in GaAs/Al[0.35]Ga[0.65]As p-i-n double quantum wells
Timofeev V. B., Larionov A. V., Alessi M. Grassi, Capizzi M., Frova A., Hvam J. M.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Theoretical study of luminescence degradation by oxidation in Si(001) and Si(111) ultrathin films: Gap states induced by oxidation
Nishida Masahiko
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Anomalous selection rules and heavy-light hole beats: Stress effects in GaAs
Bonadeo N. H., Steel D. G., Merlin R.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Exciton dephasing and biexciton binding in CdSe/ZnSe islands
Wagner H. P., Tranitz H.-P., Preis H., Langbein W., Leosson K., Hvam J. M.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 15 , 1999
Auger decay of excitons in Cu[2]O
O`Hara K. E., Gullingsrud J. R., Wolfe J. P.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 15 , 1999
Crystal anisotropy and spin-polarized photoluminescence of ordered Ga[x]In[1-x]P
Fluegel B., Zhang Y., Mascarenhas A., Geisz J. F., Olson J. M., Duda A.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Nonlinearities in emission from the lower polariton branch of semiconductor microcavities
Tartakovskii A. I., Kulakovskii V. D., Krizhanovskii D. N., Skolnick M. S., Astratov V. N., Armitage A., Roberts J. S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Exciton magnetic polarons in asymmetric diluted magnetic semiconductor quantum wells
Stirner T., Miao J., Hagston W. E., Takeyama S., Karczewski G., Wojtowicz T., Kossut J.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Coupling of InGaN quantum-well photoluminescence to silver surface plasmons
Gontijo I., Boroditsky M., Yablonovitch E., Keller S., Mishra U. K., DenBaars S. P.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Raman and photoluminescence investigations of disorder in ZnSe films deposited on n-GaAs
Ganguli Tapas, Ingale Alka
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Influence of defect states on the nonlinear optical properties of GaN
Haag H., Honerlage B., Briot O., Aulombard R. L.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires
Emiliani V., Lienau Ch., Hauert M., Coli G., DeGiorgi M., Rinaldi R., Passaseo A., Cingolani R.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 19 , 1999
Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate
Kasai Jun-ichi, Tanaka Sigehisa, Higuchi Katsuhiko, Katayama Yoshifumi
Phys. Rev. B: Condens. Matter, Vol: 60, No: 19 , 1999
Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells
Arimoto K., Sugita T., Usami N., Shiraki Y.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 19 , 1999
Thermal-strain-induced splitting of heavy- and light-hole exciton energies in CuI thin films grown by vacuum evaporation
Kim D., Nakayama M., Kojima O., Tanaka I., Ichida H., Nakanishi T., Nishimura H.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 19 , 1999
Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current
Ignatiev Ivan V., Kozin Igor E., Ren Hong-Wen, Sugou Shigeo, Masumoto Yasuaki
Phys. Rev. B: Condens. Matter, Vol: 60, No: 20 , 1999
Excitonic singlet-triplet ratio in a semiconducting organic thin film
Baldo M. A., O`Brien D. F., Thompson M. E., Forrest S. R.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 20 , 1999
Magnetophotoluminescence of D{-} singlet and triplet states in GaAs
Harrison D. A., Stotz J. A. H., Karasyuk V. A., Watkins S. P., Thewalt M. L. W., Beckett D. J. S., SpringThorpe A. J.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 23 , 1999
Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
Sauvage S., Boucaud P., Brunhes T., Lemaitre A., Gerard J.-M.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 23 , 1999
Femtosecond relaxation kinetics of fluorescent and nonfluorescent states in blue- and red-phase polydiacetylenes
Yoshizawa M., Kubo A., Saikan S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 23 , 1999
Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy
Nishikawa Hiroyuki, Stahlbush Robert E., Stathis James H.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 23 , 1999
Donor-hydrogen bound exciton in epitaxial GaN
Chtchekine D. G., Feng Z. C., Gilliland G. D., Chua S. J., Wolford D.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 23 , 1999
Stability of nitrogen in ZnSe and its role in the degradation of ZnSe lasers
Gundel S., Albert D., Nurnberger J., Faschinger W.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Oxygen isoelectronic impurity in ZnS[x]Te[1-x]
Seong M. J., Alawadhi H., Miotkowski I., Ramdas A. K., Miotkowska S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Giant anti-Stokes photoluminescence from semimagnetic heterostructures
Heimbrodt Wolfram, Happ Michael, Henneberger Fritz
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Exciton localization in semimagnetic semiconductors probed by magnetic polarons
Kavokin K. V., Merkulov I. A., Yakovlev D. R., Ossau W., Landwehr G.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Electric-field-induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice
Schrottke L., Hey R., Grahn H. T.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes
Landin L., Pistol M.-E., Pryor C., Persson M., Samuelson L., Miller M.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Inhibited carrier transfer in ensembles of isolated quantum dots
Lobo C., Leon R., Yang W., Sercel P. C., Liao X. Z., Zou J., Cockayne D. J. H.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Two-dimensional exciton dynamics and gain formation processes in In[x]Ga[1-x]N multiple quantum wells
Satake Akihiro, Masumoto Yasuaki, Miyajima Takao, Asatsuma Tsunenori, Ikeda Masao
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Optical anisotropy in vertically coupled quantum dots
Yu P., Langbein W., Leosson K., Hvam J. M., Ledentsov N. N., Bimberg D., Ustinov V. M., Egorov A. Yu., Zhukov A. E., Tsatsul`nikov A. F., Musikhin Yu. G.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Exciton-electron dynamics studied by microwave photoconductivity and photoluminescence in undoped GaAs/Al[0.3]Ga[0.7]As quantum wells
Kozhevnikov M., Ashkinadze B. M., Cohen E., Ron Arza, Shtrikman Hadas
Phys. Rev. B: Condens. Matter, Vol: 60, No: 24 , 1999
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
Kornitzer K., Ebner T., Thonke K., Sauer R., Kirchner C., Schwegler V., Kamp M., Leszczynski M., Grzegory I., Porowski S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Barrier-width dependence of group-III nitrides quantum-well transition energies
Leroux Mathieu, Grandjean Nicolas, Massies Jean, Gil Bernard, Lefebvre Pierre, Bigenwald Pierre
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga[0.7]Al[0.3]As quantum wells
Oliveira J. B. B. de, Meneses E. A., Silva E. C. F. da
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
Buyanova I. A., Wagner Mt., Chen W. M., Edwards N. V., Monemar B., Lindstrom J. L., Bremser M. D., Davis R. F., Amano H., Akasaki I.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures
Usami N., Sugita T., Ohta T., Issiki F., Shiraki Y., Uchida K., Miura N.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Single-dot spectroscopy of CdS nanocrystals and CdS/HgS heterostructures
Koberling Felix, Mews Alf, Basche Thomas
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells
Chow W., Kira M., Koch S. W.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Dynamical electron-ion coupling in the ionic conductor α-NaSn
Miyata Masayasu, Fujiwara Takeo, Yamamoto Susumu, Hoshi Takeo
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps
Crooker S. A., Rickel D. G., Lyo S. K., Samarth N., Awschalom D. D.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Electron-filling modulation reflectance in charged self-assembled In[x]Ga[1 - x]As quantum dots
Hsu T. M., Chang W.-H., Tsai K. F., Chyi J.-I., Yeh N. T., Nee T. E.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Radiative recombination in p-type δ-doped layers in GaAs
Zhao Q. X., Willander M., Holtz P. O., Lu W., Dou H. F., Shen S. C., Li G., Jagadish C.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Valence-band ordering in ZnO
Reynolds D. C., Look D. C., Jogai B., Litton C. W., Cantwell G., Harsch W. C.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation
Bhatti A. S., Alessi M. Grassi, Capizzi M., Frigeri P., Franchi S.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Magneto-optical properties of Zn[0.95]Mn[0.05]Se/Zn[0.76]Be[0.08]Mg[0.16]Se quantum wells and Zn[0.91]Mn[0.09]Se/Zn[0.972]Be[0.028]Se spin superlattices
Konig B., Zehnder U., Yakovlev D. R., Ossau W., Gerhard T., Keim M., Waag A., Landwehr G.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Temperature-induced turnover of the well and barrier layers in ZnSe/Zn[0.84]Mn[0.16]Se superlattices
Zhu Zuo-Ming, Li Guo-Hua, Zhang Wang, Han He-Xiang, Wang Zhao-Ping, Wang Jie, Wang Xun
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon
M`ghaieth R., Maaref H., Mihalcescu I., Vial J. C.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 7 , 1999
Optical control of the two-dimensional electron-gas density in single asymmetric quantum wells: Magnetic-field effect
Cardoso A. J. C., Qu Fanyao, Morais P. C.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 7 , 1999
High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition
Binet F., Duboz J. Y., Off J., Scholz F.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 7 , 1999
Experimental evidence for moleculelike absorption and emission of porous silicon using far-field and near-field optical spectroscopy
Moyer Patrick J., Cloninger Todd L., Gole James L., Bottomley Lawrence A.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 7 , 1999
Collective effects in optical spectra of high-density-high-mobility two-dimensional electron gases
Meulen H. P. van der, Santa-Olalla I., Rubio J., Calleja J. M., Friedland K. J., Hey R., Ploog K.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 7 , 1999
Polarization anomalies at filling factors ν= 3, 5, and 7: Evidence for Skyrmions at ν>1
Kerridge G. C., Plaut A. S., Holland M. C., Stanley C. R., Ploog K.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy
Goldys E. M., Godlewski M., Langer R., Barski A., Bergman P., Monemar B.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Spectroscopy of growth islands in GaAs/In[0.1]Ga[0.9]As/AlAs double-barrier structures from photoluminescence and resonant tunneling studies
Gobato Y. Galvao, Triques A. L. C., Rivera P. H., Schulz P. A.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Interface-related exciton-energy blueshift in GaN/Al[x]Ga[1 - x]N zinc-blende and wurtzite single quantum wells
Wang H., Farias G. A., Freire V. N.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Quantum indistinguishability effects of confined polyexcitons
Shum Kai, Mooney P. M., Chu J. O.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Hole spin quantum beats in quantum-well structures
Marie X., Amand T., Jeune P. Le, Paillard M., Renucci P., Golub L. E., Dymnikov V. D., Ivchenko E. L.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Vertically self-organized Ge/Si(001) quantum dots in multilayer structures
Thanh Vinh Le, Yam V., Boucaud P., Fortuna F., Ulysse C., Bouchier D., Vervoort L., Lourtioz J.-M.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Photoexcitations in oriented tetrahexyl-sexithiophene thin films
Botta C., Destri S., Porzio W., Borghesi A., Sassella A., Tubino R., Bongiovanni G., Loi M. A., Mura A.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Radiative and nonradiative recombination in polymerlike a-C:H films
Heitz T., Godet C., Bouree J. E., Drevillon B., Conde J. P.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Growth and optical properties of strain-induced quantum dots
Lipsanen H., Sopanen M., Tulkki J. et al.
Phys. scr., Vol: 79, No: , 1999
Excitation properties of SiC photoluminescence
Egilsson T., Ivanov I.G., Henry A., Janzen E.
Phys. scr., Vol: 79, No: , 1999
Magnetooptical ivnestigations on electron irradiated GaN
Wagner Mt., Buyanova I.A., Chen W.M. et al.
Phys. scr., Vol: 79, No: , 1999
Investigation of InGaN/GaN quantum well structures by photoluminescence and photoluminescence excitation spectroscopy
Dalfors J., Holtz P.O., Bergman J.P., Monemar B., Amano H., Akasaki I.
Phys. scr., Vol: 79, No: , 1999
Effect of electron irradiation on optical properties of gallium nitride
Buyanova I.A., Wagner Mt., Chen W.M. et al.
Phys. scr., Vol: 79, No: , 1999
Carrier capture and emission in self-assembled InGaAs/GaAs quantum dots
Marcinkevicius S., Leon R.
Phys. scr., Vol: 79, No: , 1999
Characteristics of Si δ-layers embedded in GaAs
Pozina G., Holtz P.O., Sernelius B. et al.
Phys. scr., Vol: 79, No: , 1999
The effect of In segregation on the PLE spectra of In[x]Ga[1-x]As/GaAs multiple quantum wells
Worren T., Fimland B.O., Hunderi O.
Phys. scr., Vol: 79, No: , 1999
Photoluminescence studies of p-type modulation doped GaAs/AlGaAs quantum wells in the high doping regime
Wongmanerod S., Holtz P.O., Reginski K. et al.
Phys. scr., Vol: 79, No: , 1999
The role of spatial potential fluctuations in the shape of the PL bands of multinary semiconductor compounds
Krustok J., Collan H., Yakushev M., Hjelt K.
Phys. scr., Vol: 79, No: , 1999
Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors
Jursenas S., Tamulaitis G., Kurilcik G., Zukauskas A.
Phys. scr., Vol: 79, No: , 1999
Photoluminescence intensity enhancement by electron beam irradiation into GaAs quantum wells
Murata Tomohiro, Ohno Yutaka, Kishimoto Shgieru, Mizutani Takashi
Solid-State Electron., Vol: 43, No: 1 , 1999
Electrical and optical changes in the near surface of reactively ion etched n-GaN
Chen J.Y., Pan C.J., Chi G.C.
Solid-State Electron., Vol: 43, No: 3 , 1999
Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs[0.69]P[0.31] substrates with application to visible light-emitting diodes
Chen L.-C., Hsu T.-C., Wu M.-C.
Solid-State Electron., Vol: 43, No: 4 , 1999
Defect related dark current and charge injection in Si[1-x]Ge[x]/Si multiple quantum wells
Huang X.L., Jeong M.S., Ihm S.H. et al.
Solid-State Electron., Vol: 43, No: 5 , 1999
Porous silicon-mechanisms of growth and applications
Parkhutik V.
Solid-State Electron., Vol: 43, No: 6 , 1999
Influence of carbon-containing contamination in the luminescence of porous silicon
Guerrero-Lemus R., Ben Hander F.A., Moreno J.D. et al.
Solid-State Electron., Vol: 43, No: 6 , 1999
Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine
Sai H., Fujikura H., Hirama A., Hasegawa H.
Solid-State Electron., Vol: 43, No: 8 , 1999
Exciton recombination dynamics in CdTe/CdZnTe quantum wells
Zhang Xi-qing, Wang Yong-sheng, Xu Zheng et al.
Acta phys. sin., Vol: 48, No: 1 , 1999
Intense ultra violet photoluminescence at room temperature in as deposited Si:H:O films
Tong Song, Liu Xiang-na, Gao Ting et al.
Acta phys. sin., Vol: 48, No: 2 , 1999
Computer simulation of energy transrer process
Chen Bao-jiu, Qin Wei-ping, Wang Hai-yu et al.
Acta phys. sin., Vol: 48, No: 3 , 1999
Influence of deeplevels on the performance of AlGaInP/GaAs heterojunction bipolar transistor
Zhang Xing-hong, Hu Yu-sheng, Wu Jie et al.
Acta phys. sin., Vol: 48, No: 3 , 1999
Exciton states and luminescent properties in one-dimensional semiconductor polymer and the effect of lattice distortion. Lanczos exact diagonalization method
Xiong Ye
Acta phys. sin., Vol: 48, No: 6 , 1999
Secondary ion mass spectroscopy and photoluminescence investigations on the GaN epilayer grown on Si substrate
Zhang Hao-xiang, Lu Huang-ming, Ye Zhi-zhen et al.
Acta phys. sin., Vol: 48, No: 7 , 1999
Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate
Jiang Wei-hong, Xu Huai-zhe, Gong Qian et al.
Acta phys. sin., Vol: 48, No: 8 , 1999
Study of the inter-band transition of the GaAs single-crystal film on SrTiO[3] substrate by MBE
Chen Yi-dong, Liu Xing-quan, Lu Wei, et al.
Acta phys. sin., Vol: 48, No: 9 , 1999
Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)
Si Jun-jie, Yang Qing-qing, Teng Da, et al.
Acta phys. sin., Vol: 48, No: 9 , 1999
Preparation of Yb{3+}-ion-doped Si-based light-emitting materials with sol-gel method
Xie Da-tao, Wu Jing-guang, Ma Gang, et al.
Acta phys. sin., Vol: 48, No: 9 , 1999
Фотолюминесцентные исследования амфотерного поведения кремния в арсениде галлия
Галиев Г.Б., Карачевцева М.В., Мокеров В.Г. и др.
Докл. РАН, Vol: 367, No: 5 , 1999
Люминесценция пленок кремния на сапфире, облученных высокоэнергетическими частицами
Коршунов Ф.П., Ларионова Т.П., Мудрый А.В. и др.
Ж. прикл. спектроскопии, Vol: 66, No: 3 , 1999
Особенности фотолюминесценции пористого кремния после химического травления в HF
Макара В.А., Болтовец Н.С., Вакуленко О.В. и др.
Ж. прикл. спектроскопии, Vol: 66, No: 3 , 1999
Люминесценция эрбий- и иттербийсодержащего комплекса в пленках пористого кремния
Филиппов В.П., Кузнецова В.В., Хоменко В.С. и др.
Ж. прикл. спектроскопии, Vol: 66, No: 3 , 1999
Влияние приповерхностных полей на люминесценцию кристаллов ZnS и ZnO
Никитенко В.А., Серов Е.А., Мухин С.В., Стоюхин С.Г.
Ж. прикл. спектроскопии, Vol: 66, No: 6 , 1999
Исследование механизмов люминесценции монокристаллов ZnS-Ag, Al методом времяразрешенной спектроскопии
Кассандров И.Н., Мельник Н.Н., Оконечников А.П.
Ж. прикл. спектроскопии, Vol: 66, No: 6 , 1999
Влияние физических и химических обработок поверхности на фотолюминесценцию пористого кремния
Марончук И.Е., Найденков М.Н., Найденкова М.В. и др.
Ж. техн. физ., Vol: 69, No: 1 , 1999
Влияние примесей на фотолюминесценцию модифицированных кристаллов InP
Баимбетов Ф.Б., Джумамухамбетов Н.Г.
Ж. техн. физ., Vol: 69, No: 4 , 1999
Исследование монокристаллов арсенида галлия различной кристаллографической ориентации, имплантированных ионами кремния и подвергнутых импульсному фотонному отжигу
Васльковский С.В., Духновский М.П., Конакова Р.В., Тхорик Ю.А.
Ж. техн. физ., Vol: 69, No: 5 , 1999
Нестабильность фотолюминесценции пористого кремния
Орлов А.М., Синдяев А.В.
Ж. техн. физ., Vol: 69, No: 6 , 1999
Флуктуационные состояния и оптические спектры твердых растворов с сильным изоэлектронным возмущением
Клочихин А.А., Пермогоров С.А., Резницкий А.Н.
Ж. эксперим. и теор. физ., Vol: 115, No: 3 , 1999
Кинетика непрямой фотолюминесценции в двойных квантовых ямах GaAs/Al[x]Ga[1-x]As с большой амплитудой хаотического потенциала
Бутов Л.В., Минцев А.В., Филин А.И., Эберл К.
Ж. эксперим. и теор. физ., Vol: 115, No: 5 , 1999
Спектроскопия электроотражения, электронная зонная структура и механизм видимой фотолюминесцнеции анизтропно травленного кремния
Венгер Е.Ф., Горбач Т.Я., Матвеева Л.А., Свечников С.В.
Ж. эксперим. и теор. физ., Vol: 116, No: 5 , 1999
Мнгогофотонные оптические переходы в размерно-ограниченных системах в магнитном поле
Синявский Э.П., Гребенщикова Е.И.
Ж. эксперим. и теор. физ., Vol: 116, No: 6 , 1999
Фотолюминесценция наноостровков германия в кремнии
Филатов Д.О., Сейрингер Х.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Усиление фотолюминесценции наноструктурированной системы кремний в SiO[2] при ионном легировании фосфором
Тетельбаум Д.И., Горшков О.Н., Трушин С.А., Степихова М.В.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Механизмы возбуждения ионов эрбия в кристаллическом кремнии
Гусев О.Б., Бреслер М.С., Захарченя Б.П. и др.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Электрические и оптические характеристики кремния, легированного эрбием в процессе сублимационной молекулярно-лучевой эпитаксии
Андреев А.Ю., Андреев Б.А., Дроздов М.Н. и др.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Фотолюминесценция редкоземельных ионов эрбия в пористом кремнии. Природа оптически активных центров
Степихова М.В., Янч В.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Катодолюминесцентная и фотолюминесцентная спектроскопия монокристаллов ZnS:Cu
Назаров М.В., Соболевская Р.Л., Петров В.И., Петров А.С.
Изв. РАН. Сер. физ., Vol: 63, No: 7 , 1999
Синтез и оптические свойства монокристаллов и пленок диарсенидов цинка и кадмия
Маренкин С.Ф., Морозова В.А.
Неорган. матер., Vol: 35, No: 10 , 1999
Получение и люминесцентные свойства монокристаллов CdX<Ge>, CdX<Sn> (X-S, Se)
Один И.Н., Чукичев М.В., Галиулин Э.А.
Неорган. матер., Vol: 35, No: 11 , 1999
Изменение электронной структуры и энергия активации гашения фотолюминесценции пористого кремния n-типа при электронном облучении
Костишко Б.М., Орлов А.М., Пирогов А.В., Фролов В.А.
Неорган. матер., Vol: 35, No: 3 , 1999
Нелюминисцирующие пятна как проявление фазового перехода первого рода в полупроводниковой пленке
Эйдельман Е.Д.
Неорган. матер., Vol: 35, No: 6 , 1999
Фотолюминесценция соединений Ca[4]Ga[2]S[7]:Ce{3+} и Ca[4]Ga[2]S[7]:Pr{3+}
Тагиев Б.Г., Тагиев О.Б., Джаббаров Р.Б. и др.
Неорган. матер., Vol: 36, No: 1 , 1999
Люминесценция слоев теллурида цинка, полученных методом реакций твердофазного замещения
Махний В.П., Слетов М.М.
Оптика и спектроскопия, Vol: 87, No: 3 , 1999
Особенности фотолюминесценции монокристаллических и пористых слоев кремния, легированных эрбием
Орлов Л.К., Ивин С.В., Шенгуров Д.В., Штейнман Э.А.
Письма в ЖТФ, Vol: 25, No: 10 , 1999
Лазерная генерация в вертикальном направлении в многослойных квантово-размерных InGaN/GaN
Сахаров А.В., Лундин В.В., Семенов В.А. и др.
Письма в ЖТФ, Vol: 25, No: 12 , 1999
Выращивание кристаллически совершенных Si-Si[1-x]Ge[x]-(Ge[2])[1-x](InP)[x]
Саидов А.С., Кошчанов Э.А., Раззаков А.Ш., Исмаилов Ш.К.
Письма в ЖТФ, Vol: 25, No: 24 , 1999
Аномальный характер кинетики затухания фотолюминесценции карбонизированного пористого кремния
Костишко Б.М., Атажанов Ш.Р., Миков С.Н. и др.
Письма в ЖТФ, Vol: 25, No: 6 , 1999
Фотолюминесценция систем пористый кремний-алмазоподобная пленка углерода, подвергнутых быстрому термическому отжигу
Рожин А.Г., Клюй Н.И., Пирятинский Ю.П., Семенович В.А.
Письма в ЖТФ, Vol: 25, No: 8 , 1999
Оптическое детектирование поглощения акустических фононов двумерным электронным газом в магнитном поле
Житомирский В.Е., Волков О.В., Кукушкин И.В. и др.
Письма в ЖЭТФ, Vol: 69, No: 1-2 , 1999
Влияние магнитного поля на пластичность, фото- и электролюминесценцию монокристаллов ZnS
Головин Ю.И., Моргунов Р.Б., Баскаков А.А. и др.
Письма в ЖЭТФ, Vol: 69, No: 1-2 , 1999
Интерференционная ионизация примеси электрическим полем в системе квантовых ям
Алещенко Ю.А., Казаков И.П., Капаев В.В. и др.
Письма в ЖЭТФ, Vol: 69, No: 3-4 , 1999
Наблюдение тонкой структуры спектра фотолюминесценции иона ER{3+} в матрице аморфного кремния
Андреев А.А., Голубев В.Г., Мастеров В.Ф. и др.
Письма в ЖЭТФ, Vol: 70, No: 11-12 , 1999
Фотоиндуцированная трансформация центров люминесценции в кристаллах C[60] при высоком давлении
Негрий В.Д., Мелетов К.П.
Письма в ЖЭТФ, Vol: 70, No: 11-12 , 1999
Оптические свойства экситонов в квантовых нитях полупроводник (CdS) - диэлектрик
Гаврилов С.А., Гусев В.В., Днепровский В.С. и др.
Письма в ЖЭТФ, Vol: 70, No: 3-4 , 1999
Новый вид экситонного излучения в твердых растворах CdS[1-x]Se[x]
Новиков Б.В., Григорьева Н.Р., Григорьев Р.В. и др.
Письма в ЖЭТФ, Vol: 70, No: 3-4 , 1999
Локализация отрицательно заряженных экситонов в квантовых ямах GaAs/AlGaAs
Волков О.В., Товстоног С.В., Кукушкин И.В. и др.
Письма в ЖЭТФ, Vol: 70, No: 9-10 , 1999
Экситонные состояния в квантовых ямах, сформированных из "надбарьерных" электронных состояний
Муляров Е.А., Сибельдин Н.Н., Скориков М.Л. и др.
Письма в ЖЭТФ, Vol: 70, No: 9-10 , 1999
Природа швидкоi фоторефрактивноi нелiнiйностi в кристалi CdTe:Fe
Борщ А.О., Бродин М.С., Волков В.I. и др.
Укр. фiз. ж., Vol: 44, No: 1-2 , 1999
Оптичнi та електричнi властивостi монокристалiв сульфiду кадмiю, опромiнених електронами
Манжара В.С., Давидюк Г.Е., Богданюк М.С.
Укр. фiз. ж., Vol: 44, No: 1-2 , 1999
Фотолюмiнесценцiя нанокристалiтiв Ge в SiO[2]-матрицi
Валах М.Я., Юхимчук В.О.
Укр. фiз. ж., Vol: 44, No: 10 , 1999
Фотоелектроннi властивостi поруватого кремнiю
Вакуленко О.В., Кондратенко С.В., Макара В.А. и др.
Укр. фiз. ж., Vol: 44, No: 12 , 1999
Оптико-люмiнесцентнi дослiдження гетеpостpуктуp поpуватий кpемнiй -Кpемнieва подкладка
Монастиpський Л.С.
Укр. фiз. ж., Vol: 44, No: 12 , 1999
Вплив внутрiшньi деформацii на енергетичний стан екситонiв у напружених надгратках ZnS-ZnSe
Бондар М.В., Тищенко В.В., Бродин М.С.
Укр. фiз. ж., Vol: 44, No: 12 , 1999
Дослiдження процесу старiння пористого кремнiю
Баран Н.П., Булах Б.М., Джумаев Б.Р. и др.
Укр. фiз. ж., Vol: 44, No: 3 , 1999
Дослiдження оптичних властивостей a-C:HΝ-плiвок методами спектральноi елiпсометрii та фотолюмiнесценцii
Клюй М.I.
Укр. фiз. ж., Vol: 44, No: 6 , 1999
Домiшково-дефектна структура CdTe:Cl - матерiалу для детекторiв iонiзуючого випромiнювання (Огляд)
Корбутяк Д.В., Мельничук С.В., Ткачук П.М.
Укр. фiз. ж., Vol: 44, No: 6 , 1999
Екситоннi спектри кристалiв ZnAs[2]
Бiлий М.М., Горбань I.С., Дмитрук I.М. и др.
Укр. фiз. ж., Vol: 44, No: 7 , 1999
Вплив адсорбцii амiаку на фотолюмiнесценцiю неоднорiдного мiкропоруватого кремнiю
Вашпанов Ю.О.
Укр. фiз. ж., Vol: 44, No: 7 , 1999
Влияние кратковременных высокотемпературных отжигов на фотолюминесценцию легированного эрбием GaN в области длин волн 1,0-1,6 мкм
Давыдов В.Ю., Лундин В.В., Смирнов А.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 1 , 1999
Влияние энергетического транспорта электронов путем излучения оптических фотонов на суперлюминесценцию и обратимое просветление тонкого слоя GaAs, возбуждаемого мощным пикосекундным импульсом света
Броневой И.Л., Кривоносов А.Н.
Физ. и техн. полупроводников , Vol: 33, No: 1 , 1999
Особенности температурной зависимости поляризации фотолюминесценции комплексов вакансия Ga-Sn[Ga](Si[Ga]) в GaAs при резонансном поляризованном возбуждении
Гуткин А.А., Рещиков М.А., Седов В.Е.
Физ. и техн. полупроводников , Vol: 33, No: 1 , 1999
Исследование влияния состава и условий отжига на оптические свойства квантовых точек (In,Ga)As в матрице (Al,Ga)As
Чжень Чжао, Бедарев Д.А., Воловик Б.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 1 , 1999
Туннельно-излучательная рекомбинация и люминесценция трапецеидальных δ-легированных сверхрешеток
Осипов В.В., Селяков А.Ю.
Физ. и техн. полупроводников , Vol: 33, No: 1 , 1999
Влияние термического отжига на интенсивность полосы фотолюминесценции 1,54 мкм в легированном эрбием гидрогенизированном аморфном кремнии
Андреев А.А., Воронков В.Б., Медведев А.В., Певцов А.Б.
Физ. и техн. полупроводников , Vol: 33, No: 1 , 1999
Люминесцентные свойства слоев InAs и p-n-структур на их основе, выращенных методом газофазной эпитаксии из металлорганических соединений
Воронина Т.И., Зотова Н.В., Кижаев С.С. и др.
Физ. и техн. полупроводников , Vol: 33, No: 10 , 1999
Некоторые оптические свойства объемных кристаллов нитрида галлия, выращенных газофазным методом в хлоридной системе
Зубрилов А.С., Мельник Ю.В., Николаев А.Е. и др.
Физ. и техн. полупроводников , Vol: 33, No: 10 , 1999
Неупругое рассеяние горячих электронов на нейтральных донорах в квантовых ямах GaAs/AlAs, сильно легированных кремнием
Акимов И.А., Сапега В.Ф., Мирлин Д.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 10 , 1999
Формирование оптически активных центров в пленках аморфного гидрированного кремния при легировании эрбием
Мездрогина М.М., Аннаразова М.П., Теруков Е.И. и др.
Физ. и техн. полупроводников , Vol: 33, No: 10 , 1999
Эффекты сильного p-легирования в спектрах поляризованной эмиссии и низкотемпературной люминесценции напряженных GaAs/GaAsP-пленок
Субашиев А.В., Калевич В.К., Мамаев Ю.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 11 , 1999
Обратимые и необратимые изменения спектров фотолюминесценции пористого кремния при выдерживании в воде
Джумаев Б.Р.
Физ. и техн. полупроводников , Vol: 33, No: 11 , 1999
Электронные свойства кристаллов ZnGeP[2], полученных методов твердофазных реакций
Вайполин А.А., Рудь В.Ю., Рудь Ю.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 12 , 1999
Донорно-акцепторная фотолюминесценция слабо компенсированного GaN:Mg
Некрасов В.Ю., Беляков Л.В., Сресели О.М. и др.
Физ. и техн. полупроводников , Vol: 33, No: 12 , 1999
Влияние γ-облучения на фотолюминесценции пористого кремния
Агекян В.Ф., Емцев В.В., Лебедев А.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 12 , 1999
Оптически активные слои кремния, легированного эрбием в процессе сублимационной молекулярно-лучевой эпитаксии
Андреев А.Ю., Андреев Б.А., Дроздов М.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Фото- и электролюминесценция вблизи 1,3 мкм структур с квантовыми точками на подложках GaAs
Жуков А.Е., Ковш А.Р., Егоров А.Ю. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Влияние условий выращивания на формирование и люминесцентные свойства квантовых точек InGaAs в матрице Si
Жуков А.Е., Егоров А.Ю., Ковш А.Р. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Оптические свойства слоев пористого кремния, полученных с использованием электролита HCl:HF:C[2]H[5]OH
Белогорохов А.И., Белогорохова Л.И.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Влияние температуры подложки и отжига на фотолюминесценцию эрбия на длине волны 1,54 мкм в пленках a-Si:H, полученных методом тлеющего разряда
Теруков Е.И., Коньков О.И., Кудоярова В.Х. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Механизмы излучательной рекомбинации в лазерах на основе двойных гетероструктур IgAaSb/InAsSbP, работающих в диапазоне 3,0÷3,6 мкм
Айдаралиев М., Зотова Н.В., Карандашев С.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Оптически активные слои кремния, легированного эрбием в процессе сублимационной молекулярно-лучевой эпитаксии
Андреев А.Ю., Андреев Б.А., Дроздов М.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Фото- и электролюминесценция вблизи 1,3 мкм структур с квантовыми точками на подложках GaAs
Жуков А.Е., Ковш А.Р., Егоров А.Ю. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Влияние условий выращивания на формирование и люминесцентные свойства квантовых точек InGaAs в матрице Si
Жуков А.Е., Егоров А.Ю., Ковш А.Р. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Оптические свойства слоев пористого кремния, полученных с использованием электролита HCl:HF:C[2]H[5]OH
Белогорохов А.И., Белогорохова Л.И.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Влияние температуры подложки и отжига на фотолюминесценцию эрбия на длине волны 1,54 мкм в пленках a-Si:H, полученных методом тлеющего разряда
Теруков Е.И., Коньков О.И., Кудоярова В.Х. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Механизмы излучательной рекомбинации в лазерах на основе двойных гетероструктур InGaAsSb/InAsSbP, работающих в диапазоне 3,0÷3,6 мкм
Айдаралиев М., Зотова Н.В., Карандашев С.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Низкотемпературная фотолюминесценция кремния, легированного гольмием
Андреев Б.А., Соболев Н.А., Курицын Д.И. и др.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Экситонный волновод и лазерная генерация в структурах со сверхтонкими GaAs квантовыми ямами и InAs субмонослойными внедрениями в AlGaAs-матрице
Цацульников А.Ф., Воловик Б.В., Леденцов Н.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Низкотемпературная фотолюминесценция кремния, легированного гольмием
Андреев Б.А., Соболев Н.А., Курицын Д.И. и др.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Экситонный волновод и лазерная генерация в структурах со сверхтонкими GaAs квантовыми ямами и InAs субмонослойными внедрениями в AlGaAs-матрице
Цацульников А.Ф., Воловик Б.В., Леденцов Н.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Спонтанно формирующиеся периодические IgGaAsP-структуры с модулированным составом
Берт Н.А., Вавилова Л.С., Ипатова И.П. и др.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Оптоэлектронные явления в полуизолирующих монокристаллах CdTe и структурах на их основе
Ильчук Г.А., Украинец Н.А., Иванов-Омский В.И. и др.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Фотолюминесценция пленок Si[3]N[4], имплантированных ионами Ge и Ar{+}
Тысченко И.Е., Володин В.А., Реболе Л. и др.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Структуры IbGaAs/GaAs с квантовыми точками в вертикальных оптических резонаторах для диапазона длин волн вблизи 1,3 мкм
Малеев Н.А., Жуков А.Е., Ковш А.Р. и др.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Erbium doped silicon epilayers grown by liquid phase epitaxy
Binetti S., Pizzini S., Cavallini A. et al.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Photoluminescence of erbium-doped silicon: excitation power dependence
Ammerlaan C.A.J., Thao D.T.X., Gregorkiewicz T. et al.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Влияние собсивенных точечных дефектов на формирование структурных дефектов и оптически активных центров при отжиге кремния, имплантированного эрбием и диспрозием
Соболев Н.А., Шек Е.И., Емельянов А.М. и др.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Влияние отжига на оптические и структурные свойства GaN:Er
Соболев Н.А., Емельянов А.М., Лундин В.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Оптическая активность Yb в GaAs и низкоразмерных структурах на основе GaAs/GaAlAs
Гиппиус А.А., Коннов В.М., Дравин В.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Электрические и люминесцентные свойства монокристаллов GaAs-A{II}B{IV}C{V}[2]
Полушина И.К., Рудь В.Ю., Рудь Ю.В.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Проявление эффектов размерности в горячей фотолюминесценции арсенида галлия: исследование 2D-квази-3D перехода
Сапега В.Ф., Перель В.И., Мирлин Д.Н. и др.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Исследование поляризованной фотолюминесценции толстых эпитаксиальных слоев GaN
Жиляев Ю.В., Криволапчук В.В., Сафронов И.Н.
Физ. и техн. полупроводников , Vol: 33, No: 7 , 1999
Исследование слоев GaN, легированных атомами As, полученных методом газофазной эпитаксии из металлорганических соединений
Цацульников А.Ф., Бер Б.Я., Карташова А.П. и др.
Физ. и техн. полупроводников , Vol: 33, No: 7 , 1999
Транспортные и оптические свойства δ-легированных оловом GaAs-структур
Кульбачинский В.А., Кытин В.Г., Лунин Р.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 7 , 1999
Самоорганизующиеся наноразмерные кластеры InP в матрице InGaP/GaAs и InAs в матрице InGaAs/InP
Винокуров Д.А., Капитонов В.А., Коваленков О.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 7 , 1999
Краевая фотолюминесценция сильно легированного In, Ga[1-x],As[1-x]P[x] (λ=1,2 мкм)
Карачевцева М.В., Страхов В.А., Яременко Н.Г.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Формирование двумерных наноостровков при осаждении сверхтонких слоев InSb на поверхность GaSb
Цацульников А.Ф., Бедарев Д.А., Воловик Б.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Длинноволновое излучение в структурах с квантовыми точками, полученными при стимулированном распаде твердого раствора на напряженных островах
Воловик Б.В., Цацульников А.В., Бедарев Д.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Твердые растворы InGaSb на основе InAs, легированные гадолинием, для светодиодов в спектральной области 3÷5 мкм
Зотова Н.В., Карандашев С.А., Матвеев Б.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Гетероэпитаксиальный рост InAs на Si: новый тип квантовых точек
Цырлин Г.Э., Петров В.Н., Дубровский В.Г. и др.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Фотолюминесценция квантовых точек InAs, выращенных на разориентированных подложках GaAs
Астахов Г.В., Кочерешко В.П., Васильев Д.Г. и др.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Гигантская линейная поляризайция фотолюминесценции в сверхрешетках типа II ZnSe/BeTe
Платонов А.В., Кочерешко В.П., Яковлев Д.Р. и др.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Спонтанно формирующиеся периодические InGaAsP-структуры с модулированным составом
Вавилова Л.С., Капитонов В.А., Мурашова А.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Optical spectra of wide band gap Be[x]Zn[1-x]Se alloys
Mintairov A.M., Peiris F.C., Lee S. et al.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Низкотемпературная люминесценция тонких пленок C[60] различной структуры
Авдеенко А.А., Горбенко Н.И., Еременко В.В. и др.
Физ. низ. температур, Vol: 25, No: 1 , 1999
Эрбий в кристаллах карбида кремния: электронный парамагнитный резонанс и высокотемпературная люминесценция
Баранов П.Г., Ильин И.В., Мохов Е.Н. и др.
Физ. тверд. тела, Vol: 41, No: 1 , 1999
Быстрое насыщение люминесценции 3d-оболочки ионов Mn{2+} в разбавленном магнитном полупроводнике Cd[1-x]Mn[x]Te с высокой концентрацией марганца
Агекян В.Ф., Васильев Н.Н., Серов А.Ю.
Физ. тверд. тела, Vol: 41, No: 1 , 1999
Фотолюминесценция тонких пленок аморфно-нанокристаллического кремния
Голубев В.Г., Медведев А.В., Певцов А.Б. и др.
Физ. тверд. тела, Vol: 41, No: 1 , 1999
Акустооптический эффект в спектре возбуждения люминесценции кристалла HgI[2]
Кардашев Б.К., Степанов В.А., Степанов П.А., Чернов В.М.
Физ. тверд. тела, Vol: 41, No: 11 , 1999
Необычные температурные зависимости фотопроводимости и рекомбинационной люминесценции аморфных молекулярных полупроводников, допированных ионными красителями
Давиденко Н.А., Ищенко А.А., Кадащук А.К. и др.
Физ. тверд. тела, Vol: 41, No: 2 , 1999
Проявление коллективных свойств пространственно-непрямых экситонов в асимметричных двойных квантовых ямах GaAs/AlAs
Криволапчук В.В., Москаленко Е.С., Жмодиков А.Л., Ченг Т.С., Фосксон С.Т.
Физ. тверд. тела, Vol: 41, No: 2 , 1999
Интердиффузия галлия и алюминия, индуцированная введением эрбия в квантовые структуры GaAs/AlGaAs
Гусев О.Б., Бер Б.Я., Бреслер М.С. и др.
Физ. тверд. тела, Vol: 41, No: 3 , 1999
Особенности температурных зависимостей фотолюминесценции квантовых островков и ультратонких квантовых ям CdTc/ZnTc
Зайцев В.В., Багаев В.С., Онищенко Е.Е.
Физ. тверд. тела, Vol: 41, No: 4 , 1999
Деформационно-индуцированные спектры фотоотражения в области перехода E[0] на гетероструктурах GaAs/Si и InP/Si725
Кузьменко Р.В., Ганжа А.В., Бочурова О.В. и др.
Физ. тверд. тела, Vol: 41, No: 4 , 1999
Кинетика затухания аннигиляционной замедленной флуоресценции ароматических молекул в пленках Лэнгмюра-Блоджетт
Ибраев Н.Х., Латонин В.А.
Физ. тверд. тела, Vol: 41, No: 4 , 1999
Спектроскопия горячей фотолюминесценцииЖ исследование двумерных структур
Мирлин Д.Н., Перель В.И., Решина И.И., Сапега В.Ф.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Exciton-electron interaction in quantum wells with a two dimensional electron gas of low density
Ossau W., Yakovlev D.R., Hu C.Y. et al.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Механизмы возбуждения и температурного гашения люминесценции ионов эрбия в кристаллическом и аморфном кремнии
Бреслер М.С., Грегоркевич Т., Гусев О.Б. и др.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Переходные и редкоземельные элементы в широкозонных полупроводниках SiC и GaN: последние исследования ЭПР
Баранов П.Г., Ильин И.В., Мохов Е.Н., Храмцов В.А.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Electron spin beats in InGaAs/GaAs quantum dots
Kalevich V.K., Tkachuk M.N., Le Jeune P. et al.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Химические эффекты при формировании электронной структуры поверхности полупроводников A{3}B{5}, сульфидированной в растворах
Бессолов В.Н., Коненкова Е.В., Лебедев М.В., Zahn D.R.T.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Орторомбическая симметрия состояний валентной зоны в квантовых ямах CdTe/Cd[1-x]Te
Аксянов И.Г., Кудинов А.В., Кусраев Ю.Г. и др.
Физ. тверд. тела, Vol: 41, No: 5 , 1999
Селективная лазерная спектроскопия локализованных экситонов в твердых растворах GaSe-GaTe в магнитном поле
Старухин А.Н., Разбирин Б.С., Чугреев А.В. и др.
Физ. тверд. тела, Vol: 41, No: 8 , 1999
ZnS:Sm, Cl red thin film electroluminescent devices with ceramic thick film as insulator layer
Chunjin Tang et al.
Acta opt. sin=Guangxue xuebao , Vol: 19, No: 10 , 1999
Dynamical study on the behavior of electroluminescent polymers under applied electric-fields
Fu Rou-Li, Zhao Er-Hai, Sun Xin
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 18, No: 3 , 1999
Voltage and frequency dependence of electroluminescence in some ZnS mixed CaS and CaS mixed ZnS phosphors
Dewangan P.K., Bhushan S.
Indian J. Phys. A., Vol: 73, No: 2 , 1999
Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures
Tamura W., Itoh O., Nugraha, et al.
J. Electron. Mater., Vol: 28, No: 7 , 1999
Electronic properties and electroluminescence of monosubstituted polyacetylenes and their mixtures with disubstituted polyacetylene
Hidayat Rahmat, Hirohata Masaharu, Fujii Akihiko et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Electroluminescence in undoped GaAs/AlAs superlattice due to avalanche breakdown
Domoto Chiaki, Ohtani Naoki, Kuroyanagi Kazuyoshi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes
Mukai Takashi, Yamada Motokazu, Nakamura Shuji
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Collective resonance and form-factor of homogeneous broadening in semiconductors
Zaitsev S.V., Gordeev N.Yu., Karachinsky L.Ya., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Collective resonance and form-factor of homogeneous broadening in semiconductors
Zaitsev S.V., Gordeev N.Yu., Karacginsky L.Ya., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode
Van Dorpe P., Motsnyi V.F., Nuboer M., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 31, No: 7B , 1999
Low-voltage dc thin-film electroluminescence with an indium-tin-oxide/GaS:Pb/ZnS/Al structure
Kim Y.S., Park S.-H.K., Yun S.J.
Jpn. J. Appl. Phys., Part 1, Vol: 31, No: 7B , 1999
Crossover energy where cathodoluminescence becomes comparable to electroluminescence in p-type GaAs observed by injecting tunneling electrons
Sasaki Susumu, Murashita Tooru
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A-1B , 1999
Effect of slight misorientation of sapphire substrate on metalorganic chemical vapor deposition growth of GaN
Yuasa Takayuki, Ueta Yoshihiro, Tsuda Yuhzoh et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF[2]/Si(111) with rapid thermal anneal
Maruyama Takeo, Nakamura Naoto, Watanabe Masahiro
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8B , 1999
Improved quantum efficiency for electroluminescence in semiconducting polymers
Cao Y., Parker I.D., Yu G. et al.
Nature, Vol: 397, No: 6718 , 1999
Electroluminescence in conjugated polymers
Friend R.H., Gymer R.W., Holmes A.B. et al.
Nature, Vol: 397, No: 6715 , 1999
Injection and detection of a spin-polarized current in a light-emitting diode
Fiederling R., Keim M., Reuscher G. et al.
Nature, Vol: 402, No: 6763 , 1999
Electrical spin injection in a ferromagnetic semiconductor heterostructure
Ohno Y., Young D.K., Beschoten B. et al.
Nature, Vol: 402, No: 6763 , 1999
Concepts of light emission from a silicon MOS tunnel emitter Auger transistor
Grekhov I.V., Shulekin A.F., Vexler M.I., Zimmermann H.
Solid-State Electron., Vol: 43, No: 2 , 1999
The effect of mode guiding in edge emitting electroluminescent GaInAsP/InP diodes
Starosta K., Zavadil J.
Solid-State Electron., Vol: 43, No: 2 , 1999
1.55 μm Er-doped GaN LED
Shen H., Pamulapati J., Taysing M. et al.
Solid-State Electron., Vol: 43, No: 7 , 1999
Monte Carlo simulation on electron intervalley transfer process in ZnS-type thin-film electroluminescent devices
Zhao Hui, Wang Yong-sheng, Xu Zheng, Xu Xu-rong
Acta phys. sin., Vol: 48, No: 3 , 1999
Mechanism of electroluminescence from a-Si:H and studies of defect energy distibution in intrinsic layer of a-Si:H solar cells by electroluminescence spectra
Han Da-xing, Wang Wan-lu, Zhang Zhi
Acta phys. sin., Vol: 48, No: 8 , 1999
Dynamical characteristics of electrolyminescence in zinc sulfide thin film devices doped with erbium
Liu Zhao-hong, Jiang Bing-xi, Chen Mou-zhi, et al.
Acta phys. sin., Vol: 48, No: 9 , 1999
Кинетика электролюминесценции в пленочных структурах на основе сульфида цинка, легированного марганцем
Гурин Н.Т., Сабитов О.Ю.
Ж. техн. физ., Vol: 69, No: 5 , 1999
Светоизлучающие диодные структуры на основе монокристаллического кремния, легированного эрбием и кислородом, работающие при комнатной температуре
Соболев Н.А., Николаев Ю.А., Емельянов А.М. и др.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Желто-оранжевые электролюминесцентные структуры на основе ZnS:Mn{2+} с регулируемым цветом свечения
Георгобиани А.Н., Грузинцев А.Н., Сююнь Сю, Зидонг Лоу
Неорган. матер., Vol: 35, No: 12 , 1999
Влияние сапфировой подложки на спектры излучения светодиодов из нитрида галлия
Кудряшов В.Е., Мамакин С.С., Юнович А.Э.
Письма в ЖТФ, Vol: 25, No: 13 , 1999
Сверхизлучение в полупроводниках
Зайцев С.В., Гордеев Н.Ю., Graham L.A. и др.
Физ. и техн. полупроводников , Vol: 33, No: 12 , 1999
Длинноволновое излучение горячих носителей заряда в кремнии
Косяченко Л.А., Мазур М.П.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Изменения люминесцентных электрических свойств светодиодов из гетероструктур InGa/AlGaN/GaN при длительной работе
Ковалев А.Н., Маняхин Ф.И., Кудряшов В.Е. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Центры с глубокими уровнями в карбиде кремния
Лебедев А.А.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Длинноволновое излучение горячих носителей заряда в кремнии
Косяченко Л.А., Мазур М.П.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Изменения люминесцентных электрических свойств светодиодов из гетероструктур InGaN/AlGaN/GaN при длительной работе
Ковалев А.Н., Маняхин Ф.И., Кудряшов В.Е. и др.
Физ. и техн. полупроводников , Vol: 33, No: 2 , 1999
Люминесцентные и электрические свойства светодиодов InGaN/AlGaN/GaN с множественными квантовыми ямами
Кудряшов В.Е., Туркин А.Н., Юнович А.Э. и др.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Влияние когерентного электромагнитного излучения на эпитаксиальные диодные структуры фосфида галлия
Иняков В.В., Моос Е.Н., Шрайнер Ю.А.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Люминесцентные и электрические свойства светодиодов InGaN/AlGaN/GaN с множественными квантовыми ямами
Кудряшов В.Е., Туркин А.Н., Юнович А.Э. и др.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Влияние когерентного электромагнитного излучения на эпитаксиальные диодные структуры фосфида галлия
Иняков В.В., Моос Е.Н., Шрайнер Ю.А.
Физ. и техн. полупроводников , Vol: 33, No: 4 , 1999
Влияние ориентации кремниевой подложки на свойства лавинных Si:Er:O-светоизлучающих структур
Соболев Н.А., Емельянов А.М., Николаев Ю.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Механизм эрбиевой электролюминесценции в аморфном гидрогенизированном кремнии
Бреслер М.С., Гусев О.Б., Пак П.Е. и др.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Влияние температуры на спектральный состав пробойной электролюминесценции p-n-структур на основе карбида кремния
Белоус М.В., Генкин А.М., Генкина В.К.
Физ. и техн. полупроводников , Vol: 33, No: 6 , 1999
Лавинные светодщиодные структуры на основе монокристаллического Si:Ho:O, работающие при комнатной температуре
Соболев Н.А., Емельянов А.М., Николаев Ю.А.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Эффект вспышечной кинетики электролюминесцнеции в органических полупроводниках, обусловленный ланжевеновской рекомбинацией
Архипов В.И., Никитенко В.Р.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Лазерная генерация с длиной волны излучения в районе 1,3 мкм в структурах на основе квантовых точек InAs
Ковш А.Р., Жуков А.Е., Малеев Н.А. и др.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Влияние магнитного поля на интенсивность электролюминесценции монокристаллов ZnS
Головин Ю.И., Моргунов Р.Б., Баскаков А.А., Шмурак С.З.
Физ. тверд. тела, Vol: 41, No: 11 , 1999
Возбуждение электролюминесценции эрбия в аморфном гидрогенизированном кремнии при термостимулированной туннельной ионизации глубоких центров
Гусев О.Б., Бреслер М.С., Захарченя Б.П. и др.
Физ. тверд. тела, Vol: 41, No: 2 , 1999
Useful sidewall quantum wire arrays
Zhichuan Niu, Zengqi Zhou, Zhong Pan et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 4 , 1999
Self-limiting MBE growth and characterization of three-dimensionally onfined nanostructures on patterned GaAs (311)A substrates
Niu Zhichuan, Notzel Richard, Jahn Uwe et al.
J. Electron. Mater., Vol: 28, No: 1 , 1999
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
Johnson M.A.L., Yu Zhonghai, Brown J.D. et al.
J. Electron. Mater., Vol: 28, No: 3 , 1999
Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy
Young A.P., Schafer J., Brillson L.J. et al.
J. Electron. Mater., Vol: 28, No: 3 , 1999
Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer
Schafer J., Young A.P., Levin T.M., et al.
J. Electron. Mater., Vol: 28, No: 7 , 1999
Yellow emission from zinc oxide giving an electron spin resonance signal at g=1.96
Ohashi Naoki, Nakata Tomokazu, Sekiguchi Takashi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
Romero M.J., Gutierrez M., Sanchez J.J. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Cathodoluminescence investigations of vertically stacked, sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates
Jahn U., Notzel R., Fricke J. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Direct experimental evidence for the role of oxygen in the luminescent properties of GaN
Toth M., Fleischer K., Phillips M. R.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patterned GaAs(311)A substrates
Jahn U., Notzel R., Ringling J., Schonherr H.-P., Grahn H. T., Ploog K. H., Runge E.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 15 , 1999
Cathodoluminescence studies of spontaneously formed low-dimensional AlGaN structures
Petersson A., Gustafsson A., Tanaka S. et al.
Phys. scr., Vol: 79, No: , 1999
Люминесцентные свойства кристаллов сульфида и селенида кадмия, легированных бором
Один И.Н., Чукичев М.В., Гринько В.В.
Неорган. матер., Vol: 35, No: 11 , 1999
Влияние примеси меди на инфракрасное излучение селенида цинка
Морозова Н.К., Картеников И.А., Виноградова О.Р. и др.
Неорган. матер., Vol: 35, No: 7 , 1999
Роль кислорода в формировании глубоких центров люминесценции ZnSe
Морозова Н.К., Каретников И.А., Гаврищук Е.М.
Неорган. матер., Vol: 35, No: 8 , 1999
Получение кубического GaN молекулярно-пучковой эпитаксией на подложках пористого GaAs
Мамутин В.В., Улин В.П., Третьяков В.В. и др.
Письма в ЖТФ, Vol: 25, No: 1 , 1999
Исследование методом микрокатодолюминесценции ростовых особенностей эпитаксиальных GaN слоев на сапфире
Усиков А.С., Третьяков В.В., Лундин В.В. и др.
Письма в ЖТФ, Vol: 25, No: 7 , 1999
Зависимость свойств кристаллов Cd[1-x]Zn[z]Te от типа собственных точечных дефектов и форм присутствия кислорода
Морозова Н.К., Каретников И.А., Блинов В.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Новая полоса излучения связанных экситонов в кристаллах ZnSe и многоплазмонные оптические переходы
Вавилов В.С., Клюканов А.А., Сушкевич К.Д. и др.
Физ. тверд. тела, Vol: 41, No: 7 , 1999
Thermal quenching of fracto-induced mechanoluminescence emission in (ZnS:SnO):Cu phosphors
Muraleedharan R., Khokhar M.S.K., Chandra B.P.
Indian J. Pure and Appl. Phys., Vol: 37, No: 5 , 1999
Спектр предвзрывной люминесценции азида таллия
Адуев Б.П., Алукер Э.Д., Кречетов А.Г. и др.
Письма в ЖТФ, Vol: 25, No: 9 , 1999
Origins of strong visible photoluminescence from a-SiO[x]:H films
Zhixun Ma, Xianbo Liao, Jie He et al.
Bandaoti xuebao = Chin. J. Semicond., Vol: 20, No: 2 , 1999
Sample preparation and photoluminescence of ZnO particles embedded in thin alkali halide crystals
Harada Yoshiyuki, Kondo Hisao, Ichimura Nobuko, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11B , 1999
Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers
Giorgis F., Pirri C. F., Vinegoni C., Pavesi L.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Photoluminescence enhancement of CF[4] plasma exposed GaAs/AlGaAs multiquantum well structures
Zhuravlev K.S., Kolosanov V.A., Holland M., Toropov I.A.
Phys. Low-Dim.struct., Vol: 1998, No: 7-8 , published: 01 January 1998
Magnetoluminescence of Ge/GeSi structures: Nature of lines and role of interface roughness
Chernenko A.V., Kalugin N.G., Kuznetsov O.A., Krasil`nik Z.F.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Optical diagnostics of quantum dots in GaAS/In[x]Ga[1-x]As heterostructures
Aleshkin V.Ya., Gusev S.A., Danil`tsev V.M. et al.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Visible light from Si/SiO[2] superlattices in optical microcavities
Lockwood D.J., Sullivan B.T., Labbe H.J.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
ZnSe/ZnS single quantum wire heterostructures emitting in the near-ultraviolet region
Rinaldi R., Turco C., Lovergine N. et al.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Dopant δ-layers in GaAs and GaAs/AlGaAs quantum structures
Holtz P.O., Sernelius B., Ferreira A.C. et al.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Temperature dependence of absorption edge in p-type porous silicon
Bek A., Aydinli A.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Anisotropy and anomalies of low-temperature 2D-electron transport in δ-(Si,Sn) doped nanostructures grown on i-GaAs vicinal plane
Kadushkin V.I., Klyshevich E.V., Shangina E.L., Tsahhaev F.M.
Phys. Low-Dim.struct., Vol: 1998, No: 3-4 , published: 01 January 1998
Сильная локализация носителей тока в многослойных структурах InAs/GaAs с квантовыми точками
Кульбачинский В.А., Кытин В.Г., Лунин Р.А., Голиков А.В., Демин А.В., Малкина И.Г., Звонков Б.Н., Сафьянов Ю.Н.
Вестн. МГУ. Сер. 3, Vol: 1998, No: 5 , published: 01 January 1998
Особенности активного механизма участия экситонов в фотопроводимости
Григорьев Р.В., Новиков Б.В.
Вестн. С.-Петербург. ун-та. Сер. 4, Vol: 1998, No: 4 , published: 01 January 1998
Явище надплинностi в електроннiй системi кристалiв
Горбань I.С.
Доп. Нац. АН Украïни, Vol: 1998, No: 2 , published: 01 January 1998
Наноэлектронные СВЧ-транзисторы на основе гетероструктур соединений A[3]B[5] с двумерным электронным газом
Мокеров В.Г., Федоров Ю.В., Гук А.В., Великовский Л.Э., Каминский В.Э.
Успехи соврем. радиоэлектрон., Vol: 1998, No: 8 , published: 01 January 1998
Температурные зависимости фотолюминесценции квантовых точек CdTe в ZnTe
Багаев В.С., Зайцев В.В., Онищенко Е.Е.
Кpатк. сообщ. по физ. ФИAН, Vol: 1998, No: 1 , published: 01 January 1998
Рекомбинация фотовозбужденных носителей заряда в наноструктурах пористого кремния с различным составом поверхностного покрытия
Каменев Б.В., Тимошенко В.Ю.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 11 , published: 01 January 1998
Особенности фотолюминесценции в SiO[2] с нановключениями кремния, полученными методом ионной имплантации
Тетельбаум Д.И., Карпович И.А., Степихова М.В., Шенгуров В.Г., Марков К.А., Горшков О.Н.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 5 , published: 01 January 1998
Electroluminescence from Au/extra thin nanosixe Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si
Bai G.F., Li A.P., Zhang Y.X. et al.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/p-Si structures
Qin G.G., Li A.P., Bai G.F. et al.
Phys. Low-Dim.struct., Vol: 1998, No: 1-2 , published: 01 January 1998
Исследование на РЭМ в режимах микрокатодолюминесценции и наведенного тока слоев GaN и AlGaN и выращенных на сапфире методом газофазной эпитаксии с использованием металлоорганических соединений
Говорков А.В., Поляков А.Я., Смирнов Н.Б., Сковронски М., Мильвидский М.Г.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 1 , published: 01 January 1998
Исследование на РЭМ в режимах микрокатодолюминесценции и наведенного тока слоев GaN и AlGaN и выращенных на сапфире методом газофазной эпитаксии с использованием металлоорганических соединений
Говорков А.В., Поляков А.Я., Смирнов Н.Б., Сковронски М., Мильвидский М.Г.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 1 , published: 01 January 1998
Dislocation emission of electrons in ZnS crystals
Poletaev A.V., Shmurak S.Z.
Phys. Low-Dim.struct., Vol: 1998, No: 3-4 , published: 01 January 1998
Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice
Ji Z., Usami N., Sunamura H. et al.
Acta phys. sin. Overseas Ed., Vol: 7, No: 8 , 1998
Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature
Barenz J., Eska A., Hollricher O. et al.
Appl. Opt., Vol: 37, No: 1 , 1998
Optimized light emission from layered porous silicon structures
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Appl. Opt., Vol: 37, No: 30 , 1998
Low-temperature photoluminescence in SiGe single quantum wells
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Appl. Phys. A , Vol: 66, No: 1 , 1998
High quality GaAs quantum wires grown by flow rate modulation epitaxy
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Appl. Phys. A , Vol: 66, No: 2 , 1998
Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD
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Appl. Phys. A , Vol: 67, No: 5 , 1998
Optical properties of CdSe nanoparticle films prepared by chemical deposition and sol-gel methods
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Chem. Phys. Lett., Vol: 288, No: 2-4 , 1998
Excimer emission of anthracene, perylene, coronene and pyrene microcrystals dispersed in water
Seko Toshihiro, Ogura Kazuhito, Kawakami Yasuyuki, ugino Hiroaki, Toyotama Hideki, Tanaka Jiro
Chem. Phys. Lett., Vol: 291, No: 3-4 , 1998
Luminescence from C[60] single crystals in glassy phase under site-selective excitation
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Chem. Phys. Lett., Vol: 292, No: 4-6 , 1998
Magneto-optical properties of CdS nanoparticles embedded in phosphate glass
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Chem. Phys. Lett., Vol: 295, No: 5-6 , 1998
General plasma behavior in the energy relaxation of electrons in highly p-doped semiconductors
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Eur. Phys. J. B , Vol: 5, No: 1 , 1998
Magnetic-field dependence of the electron-LO-phonon interaction in a 2D electron gas
Hartmann C., Martinez G., Fisher C.A., Fisher C.A., Braun D.W., Ploog K.
Europhys. Lett. , Vol: 41, No: 5 , 1998
Molecular beam epitaxy and optical properties of Zn[1-x]Mn[x]Se/ZnSe strained-layer superlattices
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Acta opt. sin=Guangxue xuebao , Vol: 18, No: 5 , 1998
AlGaAs short wavelength integrated superluminescent source
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Acta opt. sin=Guangxue xuebao , Vol: 18, No: 6 , 1998
Photoluminescence and Raman scattering spectroscopies of MBE-grown Hg[0.68]Cd[0.32]Te epilayer
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J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 17, No: 2 , 1998
Optical properties of ZnS[x]Te[1-x] mixed crystals
Liu Nan-Zhu, Zhu Zuo-Ming, Li Guo-Hua, Han He-Xiang, Wang Zhao-Ping, Ge Wei-Kun, Sou I.K.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 17, No: 5 , 1998
Fabrication of quantum dots by wet etching and study of size distribution
Liu Xing-Quan, Wan Ming-Fang, Chen Xiao-Shuang et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 17, No: 6 , 1998
Optimising 1550 nm InGaAsP strain compensated MQW lasers close to the miscibility gap
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IEE Proc. Optoelectron., Vol: 145, No: 1 , 1998
Strain-induced modifications of the band structure of In[x]Ga[1-x]P-In[0.5]Al[0.5]P multiple quantum wells
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IEEE J. Quantum Electron. , Vol: 34, No: 1 , 1998
Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
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IEEE J. Quantum Electron. , Vol: 34, No: 10 , 1998
Enhanced modulation bandwidth for strain-compensated InGaAslAs-InGaAsP MQW lasers
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IEEE J. Quantum Electron. , Vol: 34, No: 10 , 1998
Investigation of the magnetic field dependence of electronic and optical properties in one-side modulation-doped GaAs-Ga[1-x]Al[x]As quantum wells
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IEEE J. Quantum Electron. , Vol: 34, No: 8 , 1998
The effect of high compressive strain on the operation of AlGaInP quantum-well lasers
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IEEE J. Quantum Electron. , Vol: 34, No: 9 , 1998
High-performance 670-nm AlGaInP/CaInP visible strained quantum well lasers
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IEEE Trans. Electron Devices , Vol: 45, No: 4 , 1998
Monitoring hot-carrier degradation in SOI MOSFET`s by hot-carrier luminescence techniques
Selmi L., Pavesi M., Wong H.-S.P., Acovic A., Sangiorgi E.
IEEE Trans. Electron Devices , Vol: 45, No: 5 , 1998
Nonlinear light absorption in GaSe[1-x]S[x] solid solutions under high excitation levels
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Indian J. Phys. A., Vol: 72, No: 1 , 1998
Optical proeprties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl[2]O[4] substrate
Kim S.T., Lee Y.-J., Moon D.C., Lee C., Park H.Y.
J. Electron. Mater., Vol: 27, No: 10 , 1998
RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix
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J. Electron. Mater., Vol: 27, No: 2 , 1998
Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
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J. Electron. Mater., Vol: 27, No: 3 , 1998
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition
Eiting C.J., Gridowski P.A., Dupuis R.D.
J. Electron. Mater., Vol: 27, No: 4 , 1998
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy
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J. Electron. Mater., Vol: 27, No: 4 , 1998
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor epitaxy of AlN and GaN thin films on α(6H)-SiC substrates
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J. Electron. Mater., Vol: 27, No: 4 , 1998
Excitation mechanisms of multiple Er{3+} sites in Er-implanted GaN
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J. Electron. Mater., Vol: 27, No: 4 , 1998
Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
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J. Electron. Mater., Vol: 27, No: 4 , 1998
GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
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J. Electron. Mater., Vol: 27, No: 4 , 1998
Surface chemistry pf porous silicon carbide
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J. Electron. Mater., Vol: 27, No: 4 , 1998
Structural and optical properties of Ga[x]In[1-x]P layers grown by chemical beam epitaxy
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J. Electron. Mater., Vol: 27, No: 5 , 1998
Formation of InSb quantum dots in a GaSb matrix
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Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing
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J. Electron. Mater., Vol: 27, No: 5 , 1998
Hydrogen induced yellow luminescence in GaN grown by halide vapor phase epitaxy
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J. Electron. Mater., Vol: 27, No: 5 , 1998
Electrical and optical properties of iodine doped CdZnTe layers grown by metallorganic vapor phase eptiaxy
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J. Electron. Mater., Vol: 27, No: 6 , 1998
Nitrogen doping of ZnSe and CdTe epilayers: A comparison of two rf sources
Moldovan M., Hirsch L.S., Ptak A.J., Stinespring C.D., Myers T.H., Giles N.C.
J. Electron. Mater., Vol: 27, No: 6 , 1998
Point defects in Cd[1-x]Zn[x]Te: A correlqted photoluminescence and EPR study
Rablau C.I., Setzler S.D., Halliburton L.E., Giles N.C., Doty F.P.
J. Electron. Mater., Vol: 27, No: 6 , 1998
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
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J. Electron. Mater., Vol: 27, No: 7 , 1998
Structural, electrical and optical properties of zinc oxide produced by oxidation of zinc thin films
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J. Electron. Mater., Vol: 27, No: 7 , 1998
The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well
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J. Electron. Mater., Vol: 27, No: 9 , 1998
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
Wellmann P.J., Schoenfeld W.V., Garcia .M., Petroff P.M.
J. Electron. Mater., Vol: 27, No: 9 , 1998
Super-flat interfaces in In[0.53]Ga[0.47]As/In[0.52]Al[0.48]As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Kitada Takahiro, Saeki Tatsuya, Ohashi Masanobu et al.
J. Electron. Mater., Vol: 27, No: 9 , 1998
Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy
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J. Electron. Mater., Vol: 27, No: 9 , 1998
Green light emissions from GaP-Al[x]Ga[1-x]P double heterostructures
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Rare earth dopants as probes of localized states in chalcogenide glasses
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J. Non-Cryst. Solids , Vol: 223, No: 1-2 , 1998
Spatial and quantum confinement in crystalline and amorphous porous silicon (Invited paper)
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J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Hydrogenated amorphous silicon deposited by glow discharge of SiH[4] diluted with He: photoluminescence and electroluminescence in the visible region
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1.54 μm photoluminescence of Er-containing N-doped a-Si:H
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Photoluminescence at 1.54 μm of Er-doped hydrogenated amorphous silicon
Bresler M., Gusev O., Kuznetsov A., Kudoyarova V., Terukov E., Yassievich I., Fuhs W., Ulber I., Weiser G.
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Erbium luminescence in a-Si:H
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The improvement on blue light emission from hydrogenated amorphous silicon carbide films prepared from an organic source
Xu J., Ma T., Chen K., Du J., Huang X., Feng D.
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Influence of thermal annealing on the ultraviolet stability of a-SiC:H thin films deposited from liquid organosilanes
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Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
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Intense violet photoluminescence at room temperature in as-deposited a-Si:H:O films
Tong S., Liu X.-n., Gao T.ZYin H., Chen Y.-J., Bao X.-m.
J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Frequency resolved spectroscopy in a-Si:H/a-Si[1-x]N[x]:H multilayers and band-edge modulated a-Si[1-x]N[x]:H alloys (Invited paper)
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J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Defect structure in nitrogen-rich amorphous silicon nitride films
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Temperature-dependent photoluminescence and electroluminescence properties of polysilanes
Kamata N., Aihara S., Ishizaka W., Umeda M., Terunuma D., Yamada K., Furukawa S.
J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Correlation between gap density of states and recombination processes in high electronic quality a-C:H
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J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Time resolved photoluminescence of amorphous hydrogenated carbon
Lormes W., Hundhausen M., Ley L.
J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Photoluminescence of polymer-like amorphous carbon films grown in different plasma reactors
Bouree J.E., Heitz T.ZGodet C., Drevillon B., Conde J.P., Chu V., Berberan-Santos M.N., Fedorov A.
J. Non-Cryst. Solids , Vol: 227-2, No: Pt A , 1998
Amorphous carbon luminescence; excitation and emission in a broad energy range
Koos M., Pocsik I., Erostyak J., Buzadi A.
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From amorphous to polycrystalline thin films: dependence onannealing time of structural and electronic properties
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Site selective excitation spectroscopy of silicon nanocrystals
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Room temperature visible photoluminescence from crystallized nano-Si thin films
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Photoluminescence of porous silicon prepared from crystallized a-Si:H films
Danesh P., Bedikjan L., Savatinova I., Liarokapis E.
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Surface recombinationmodel of visible luminescence in orous silicon
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Light emission from Ge and GeO[2] manocrystals
Zacharias M., Faauchet P.M.
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Photolumienscence atudy of nano-crystalline GaN and AlN grown by reactive sputtering
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Photoluminescence and electroluminescence properties of a-Si[1-x]N[x];H based superlattice structures
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Nanocrystalline silicon superlattices: fabrication and characterization
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Superlattice structures based onamorphous carbon
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X-ray absorption spectroscopy on light emitting porous silicon by XEOL and TEY
Dalba G., Daldosso N., Fornasini P., Graziola R., Grisenti R., Rocca F.
J. Non-Cryst. Solids , Vol: 232-2, No: , 1998
Aerogels containing strongly photoluminescing zinc oxide nanocrystals
Lorenz C., Emmerling A., Fricke J., Schmidt T., Hilgendorff M., Spanhel L., Muller G.
J. Non-Cryst. Solids , Vol: 238, No: 1-2 , 1998
Visible photoluminescence from planar amorphous silicon nitride microcavities
Serpenguzel A., Bek Aydinli A., Gure M.
J. Opt. Soc. Am. B, Vol: 15, No: 11 , 1998
Luminescence from neodymiun-ion-implanted As[2]S[3] waveguides
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J. Opt. Soc. Am. B, Vol: 15, No: 4 , 1998
Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy
Ambacher O., Brunner D., Dimitrov R., Stutzmann M., Sohmer A., Scholz F.
J. Phys. A, Vol: 31, No: 17 , 1998
Yb-related photoluminescence in CuGaS[2], AgGaSe[2] and AgGaS[2]
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J. Phys. A, Vol: 31, No: 17 , 1998
Resonant Raman scattering and its correlation to exciton luminescence in AgGaS[2]
Susaki M., Wakita K., Yamamoto N., Niwa E., Masumoto K.
J. Phys. A, Vol: 31, No: 17 , 1998
Spin dependent luminescence of GaAs thin layers under tensile strain and compressive strain induced by interface stress
Zhen W., Horinaka H., Wada K., Nakanishi T., Okumi S., Saka T., Kato T.
J. Phys. A, Vol: 31, No: 17 , 1998
Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy
Ambacher O., Brunner D., Dimitrov R., Stutzmann M., Sohmer A., Scholz F.
J. Phys. A, Vol: 31, No: 17 , 1998
Yb-related photoluminescence in CuGaS[2], AgGaSe[2] and AgGaS[2]
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J. Phys. A, Vol: 31, No: 17 , 1998
Resonant Raman scattering and its correlation to exciton luminescence in AgGaS[2]
Susaki M., Wakita K., Yamamoto N., Niwa E., Masumoto K.
J. Phys. A, Vol: 31, No: 17 , 1998
Spin dependent luminescence of GaAs thin layers under tensile strain and compressive strain induced by interface stress
Zhen W., Horinaka H., Wada K., Nakanishi T., Okumi S., Saka T., Kato T.
J. Phys. A, Vol: 31, No: 17 , 1998
Exciton confinement in organic multiple quantum well structures
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J. Phys. D: Appl. Phys., Vol: 31, No: 10 , 1998
The growth and properties of single crystals of GaInTe[2], a ternary chalcogenide semiconductor
Mobarak M., Berger H., Lorusso G.F., Capozzi V., Perna G., Ibrahim M.M., Margaritondo G.
J. Phys. D: Appl. Phys., Vol: 31, No: 12 , 1998
Nondestructuve determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra
Lu W., Lee J.-H., Prasad K., Ng G., Lindstrom P.
J. Phys. D: Appl. Phys., Vol: 31, No: 2 , 1998
Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters
Liu J.P., Kong M.Y., Si J.J., Huang D.D., Li J.P., Sun D.Z.
J. Phys. D: Appl. Phys., Vol: 31, No: 23 , 1998
Photoluminescence spectra of β-rhombohedral boron
Hori Akira, Tada Tetsuya, Kimura Kaoru
J. Phys. Soc. Jpn., Vol: 67, No: 12 , 1998
Triplet-to-singlet conversion in the exciton system in β-ZnP[2]. Anti-stokes exciton luminescence
Nakamura K., Shigoku M., Kondo K., Arimoto O.
J. Phys. Soc. Jpn., Vol: 67, No: 6 , 1998
Transformation from a weak- to strong-size confinement regime in PbI[2] ultra-thin microcrystallites embedded in E-MAA copolymer
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J. Phys. Soc. Jpn., Vol: 67, No: 6 , 1998
Photoluminescence properties of single CdSe quantum dots in ZnSe obtained by self-organized growth
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J. Phys.: Condens. Matter. , Vol: 10, No: 10 , 1998
An optical study on C[60] vapour, microcrystal beam and film
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J. Phys.: Condens. Matter. , Vol: 10, No: 10 , 1998
Picosecond magneto-quantum beats of free excitons in CdS
Muller U., Stolz H., von der Osten W.
J. Phys.: Condens. Matter. , Vol: 10, No: 13 , 1998
One-dimensional excitons in GaAs quantum wires
Akiyama H.
J. Phys.: Condens. Matter. , Vol: 10, No: 14 , 1998
Raman scattering and photoluminescence of ZnS[x]Te[1-x] mixed crystals
Liu N.Z., Li G.H., Zhu Z.M., Han H.X., Wang Z.P., Ge W.K., Sou I.K.
J. Phys.: Condens. Matter. , Vol: 10, No: 18 , 1998
Screening of excitons in GaN crystals
Reynolds D.C., Look D.C., Jogai B., Molnar R.J.
J. Phys.: Condens. Matter. , Vol: 10, No: 25 , 1998
A note on the origin of the yellow luminescence in GaN
Ridley B.K.
J. Phys.: Condens. Matter. , Vol: 10, No: 27 , 1998
Luminescence and variation of valent state for cerium within pores of mesoporous silica
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J. Phys.: Condens. Matter. , Vol: 10, No: 28 , 1998
Optical amplification of Raman scattering in a GaAs bulk microcavity
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J. Phys.: Condens. Matter. , Vol: 10, No: 42 , 1998
Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy
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J. Phys.: Condens. Matter. , Vol: 10, No: 48 , 1998
Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix
Li G.H., Han H.X., Ding K., Wang Z.P.
J. Phys.: Condens. Matter. , Vol: 10, No: 48 , 1998
Origin of carrier heating in semiconductor nanocrystals: excess energy of photoexcited electrons or Auger processes?
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J. Phys.: Condens. Matter. , Vol: 10, No: 50 , 1998
Interface effects on the photoluminescence of GaAs/GaInO quantum wells
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Mixing/resonance of electronic states and optical nonlinearity in a GaAs/AlGaAs asymmetric triple quantum well structure
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Magnetoluminescence study on the low-dimensionality of excitons confined in a narrow GaAs/AlGaAs quantum well
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
GaInNAs/GaAs quantum well growth by chemical beam epitaxy
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Photoinduced formation of CdSSe nanocrystals in glass
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Photoluminescence due to degenerate electron-hole system in silicon-on-insulator wafers under ultraviolet light excitation
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Properties of ambient air aged thin porous silicon
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Heteroepitaxy and multiquantum well structure of layered compound GaSe/GaS[x]Se[1-x] on (001)GaAs substrate
Budiman Maman, Okamoto Tamotsu, Yamada Akira, Konagai Makoto
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10 , 1998
Growth and evalutation of Cd[1-x]Zn[y]Te epilayers on (100) GaAs substrates by hot wall epitaxy
Koo Bonheun, Wang Jifeng, Ishikawa Yukio, Isshiki Minoru
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10 , 1998
Degradation of photoluminescence and electron paramagnetic defects in naturally oxidized or oxygen-implanted porous silicon with electron spin resonance imaging
Furuta Hiroshi, Yamanaka Chihiro, Ikeya Motoji
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12A , 1998
Defect vs. nanocrystal luminescence emitted in Si-implanted SiO[2] layers
Jeong Jun Yong, Im Seongil, Oh MinSuk et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots
Cho Shinho, Hyon Chan Kyung, Kim Eun Kyu, Min Suk-Ki
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
GaN-rich side of GaNAs grown by gas source molecular beam epitaxy
Iwata K., Asahi H., Asami K., Kuroiwa R., Gonda Sh.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Metalorganic vapor-phase epitaxial growth and characterization of cubic Al[x]Ga[1-x]N alloy
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Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
ZnCdSe quantum wires achieved by strain-induced lateral confinement
Vanelle E., Zhang B., Yasuda T., Wang W., Segawa Y., Itoh T., Brinkmann D., Fishman G.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B
Guo Sh., Ohno H., Shen A., Ohno Y., Matsukura F.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Controlled formation of narrow and uniform InP-based In[0.53]Ga[0.47]As ridge quantum wire arrays by selective molecular beam epitaxy
Fujikura H., Hanada Y., Kihara M., Hasegawa H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Vertical quantum confinement effect on optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices
Kim S.-J., Asahi H., Asami K., Takemoto M., Fudeta M., Gonda Sh.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Size quantization in InAs/GaAs self-assembled quantum dots grown by gas-source molecular beam epitaxy
Ren H.-W., Nishi K., Sugou Sh., Masumoto Y.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Electrical field induced recombination centers in GaAs
Kawaharazuka A., Shiraishi K., Horikoshi Y.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
In-situ contactless characterization of microscopic and macroscopic properties of Si-doped MBE-grown (2×4) GaAs surfaces
Hashizume T., Ishikawa Y., Yoshida T., Hasegawa H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Low temperature near-field photoluminescence spectroscopy of InGaAs single quantum dots
Saiki T., Nishi K., Ohtsu M.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Photocurrent and photoluminescence affected by Г-X electron transfer in type-I GaAs/AlAs superlattices
Mimura H., Hosoda M., Ohtani N., Yokoo K.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Luminescence study of thermally-oxidized porous Si under subgap or overgap excitation
Shiba K., Miyazaki S., Hirose M.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Growth of luminescent GaAsP on Si substrate by metalorganic molecular beam epitaxy using GaP buffer layer
Yoshimoto M., Watanabe Y., Matsunami H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Near band-edge photoluminescence in strained and relaxed Si[1-x]Ge[x]/Si quantum wells
Yang Y., Jiang Sh., Tian Z. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Characteristics of self-assembled InSb dots grown on (100) AlGaSb by molecular beam epitaxy
Yano M., Seki Y., Ohkawa H. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Optical and structural quality of GaAs epilayers from gallium, bismuth mixed solvents by liquid phase epitaxy
Saravanan Sh., Jeganathan K., Arokiaraj J. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Below-gap spectroscopy of undoped GaAs/AlGaAs quantum wells by two-wavelength excited photoluminescence
Hoshino K., Uchida T., Kamata N. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6A , 1998
Characterization of highly efficient CdTe thin film solar cells by low-temperature photoluminescnece
Okamoto Tamotsu, Matsuzaki Yuichi, Amin Nowshad et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 7 , 1998
Heteroepitaxy of layered compound InSe and InSe/GaSe onto GaAs substrates
Budiman Maman, Yamada Akira, Konagai Makoto
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 7 , 1998
Reduction of point defects and formation of abrupt hetero-interfaces in low-temperature molecular beam epitaxy of GaAs and GaP under atomic hydrogen irradiation
Yokozeki Mikihiro, Yonezu Hiroo, Tsuji Takuto, Aizawa Kazuya, Ohshima Naoki
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A , 1998
Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers
Tu Ru-Chin, Su Yan-Kuin, Huang Ying-Sheng, Chou Shu-Tsun
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A , 1998
Spatially-controllable quantum well intermixing with stripe-size dependence in AlGaAs heterostructures
Son Nak-Jin, Han Haewook, Kwon O-Dae
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A , 1998
Photoluminescence visible at 77 K from indirect-gap Al[x]Ga[1-x]As grown by organometallic vapor phase epitaxy
Kakinuma Hiroaki
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10A , 1998
Spectral narrowing of photoluminescence in conducting polymer and fluorescent dyes infiltrated in photonic crystal, synthetic opal
Yoshino Katsumi, Tatsuhara Satoshi, Kawagishi Yoshiaki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10A , 1998
Defect analysis in bonded and H{+} split silicon-on-insulator wafers by photoluminescence spectroscopy and transmission electron microscopy
Tajima Michio, Ogura Atsushi, Karasawa Tomoki, Mizoguchi Atsushi
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10B , 1998
Crystal growth and optical property of GaN on silica glass by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE)
Murata Naoya, Tochishita Hikari, Shimizu Yuui et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10B , 1998
Effects of H plasma passivation on the optical and electrical properties of GaAs-on-Si
Wang Gang, Zhao Guang Yuan, Soga Tetsuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11A , 1998
New semiconductor alloy GaAs[1-x]Bi[x] grown by metal organic vapor phase epitaxy
Oe Kunishige, Okamoto Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11A , 1998
Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition
Hayashi Yasuhiko, Agata Yasunori, Soga Tetsuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11B , 1998
Optical properties of InGaN/GaN quantum wells with Si dopes barriers
Minsky Milan S., Chichibu Shigefusa, Fleischer Siegfried B. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11B , 1998
Improvement of the electrical properties of Cu-poor CuInS[2] in thin films by sodium incorporation
Watanabe Takayuki, Nakazawa Hidenobu, Matsui Masahiro
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11B , 1998
Lasing emission from an In[0.1]Ga[0.,9]N vertical cavity surface emitting laser
Someya Takao, Tachibana Koichi, Lee Jungkeun et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12A , 1998
Photoluminescence from reactive deposition epitaxy (RDE) grown β-FeSi[2] balls embedded in Si crystals
Suemasu Takashi, Fujii Tetsuo, Iikura Yuusuke et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Size-dependent enhancement of third-order optical nonlinearity in CuBr[x]Cl[1-x] nanocrystals embedded in glass
Li Y., Ohata M., Sasaki S., Nakamura A.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1A-18 , 1998
Anisotropic polarization properties of photoluminescence from GaInAsP/InP quantum-wire structures fabricated by two-step organometallic vapor phase epitaxy growth
Kojima T., Arai Sh., Bacher G.U.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1A-18 , 1998
Formation of carbon-related defects during the carbon-enhanced annihilation of thermal donors in silicon
Kamiura Y., Maeda T., Yamashita Y. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 2A , 1998
Photoluminescence of a high quality CuInSe[2] single crystal
Chatraphorn S., Yoodee K., Songpongs P. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3A , 1998
Thermal quenching of the photoluminescence of InGaAs/GaAs single quantum wells adjacent to a selectively oxidized AlAs layer
Pratt A.R., Takamori T., Kamijoh T.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3A , 1998
Low doped p-type AlGaAs buffer layers grown by metalorganic chemical vapor deposition using intrinsic carbon doping method
Choi S.J., Seo J.H., Lee J.H., Seo K.S.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Effects of substrate misorientation on the formation and characteristics of self-assembled InP/InGaP quantum dots
Kwon Y.-H., Cho Y.-H., Choe B.-D. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Spiral growth of InGaN nanoscale islands on GaN
Keller S., Mishra U.K., Denbaars S.P. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4B , 1998
Structural dependence of GaN/Al[2]O[3] on electric bias during electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE)
Shimizu Y., Tominari T., Hokuto Sh. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6B , 1998
Polymer electroluminescent diodes with ring microcavity structure
Fujii A., Frolov S.V., Vardeny Z.V. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6B , 1998
Buried optical waveguides of porous silicon
Takahashi M., Araki M., Koshida N.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A-9B , 1998
Photoluminescence and X-ray diffraction analysis of In[1-x-y]Ga[x]Al[y]As/InP structures grown by molecular beam epitaxy
Yoon S.F., Zhang P.H., Zheng H.Q.
Microelectron. J., Vol: 29, No: 8 , 1998
In[x]Ga[1-x]As/GaAs interfaces: From 2D islands to quantum dots
Capizzi M., Frova A., Grassi Alessi M. et al.
Nuovo cim. D, Vol: 20, No: 7-8 , 1998
Temperature dependence of transient photoluminescence in tris(8-hydroxyquinoline) aluminum (Alq3)
Priestley Richard, Walser Ardie D., Dorsinville Roger
Opt. Commun. , Vol: 158, No: 1-6 , 1998
Non-monotonous relaxation of the luminescence intensity of porous silicon
Kompan M.E., Kuz`minov E.G., Shabanov I.J.
Phys. scr., Vol: 57, No: 3 , 1998
Wannier-Mott excitons in isotope-disordered crystals
Plekhanov V.G.
Pepis Progr. Phys, Vol: 61, No: 8 , 1998
Dislocation-related luminescence properties of silicon
Steinman E.A., Grimmeiss H.G.
Semicond. Sci. Technol., Vol: 13, No: 1 , 1998
ZnCdSe/ZnSe quantum well wires fabricated by reactive ion etching and wet chemical treatment
Gurevich S.A., Lavrova O.A., Lomasov N.V., Nesterov S.I., Skopina V.I., Tanklevskaya E.M., Travnikov V.V., Osinsky A., Qiu Y., Temkin H., Rabe M., Henneberger F.
Semicond. Sci. Technol., Vol: 13, No: 1 , 1998
High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm
Lambert B., Le Corre A., Drouot V., L`Haridon H., Loualiche S.
Semicond. Sci. Technol., Vol: 13, No: 1 , 1998
New impurity-induced defect in heavily zinc-doped GaAs grown by liquid phase epitaxy
Shanirzaev T.S., Zhuravlev K.S., Yakusheva N.A., Petreneo I.P.
Semicond. Sci. Technol., Vol: 13, No: 10 , 1998
Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy
Sanchez F.J., Calle F., Sanchez-Garcia M.A., Calleja E., Munoz E., Molloy C.H., Somerford D.J., Serrano J.J., Bianco J.M.
Semicond. Sci. Technol., Vol: 13, No: 10 , 1998
Luminescence behaviour of chemically grown ZnO quantum dots
Borgohain K., Mahamuni Sh.
Semicond. Sci. Technol., Vol: 13, No: 10 , 1998
Formation of InAs quantum dots on a silicon (100) surface
Cirlin G.E., Dubrovskii V.G., Petrov V.N. et al.
Semicond. Sci. Technol., Vol: 13, No: 11 , 1998
Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates
Amano K., Kobayashi M., Ohga A. et al.
Semicond. Sci. Technol., Vol: 13, No: 11 , 1998
Size modification of self-assembled InAs quantum dots by in situ etching
Schuler H., Jin-Phillip N.Y., Phillipp F., Eberl K.
Semicond. Sci. Technol., Vol: 13, No: 11 , 1998
Photoluminescence and photoconductivity in hydrogen-passivated ZnTe
Bhunia S., Pal D., Bose D.N.
Semicond. Sci. Technol., Vol: 13, No: 12 , 1998
Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
Foxon C.T., Hooper S.E., Cheng T.S. et al.
Semicond. Sci. Technol., Vol: 13, No: 12 , 1998
Influence of substrate temperature on the processing of CdTe and CdS thin films
Arafah D.-E., Ahmad-Bitar R.
Semicond. Sci. Technol., Vol: 13, No: 3 , 1998
Magnesium-related luminescence in silicon
Steinman E.A., Grimmeiss H.G.
Semicond. Sci. Technol., Vol: 13, No: 3 , 1998
An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron X-ray topography
McNALLY P.J., Curley J., Krier A. et al.
Semicond. Sci. Technol., Vol: 13, No: 4 , 1998
Cathodoluminescence microscopy and photoluminescence of defects in ZnTe
Fernandez P., Garcia J.A., Remon A. et al.
Semicond. Sci. Technol., Vol: 13, No: 4 , 1998
Photoluminescence of MBE grown wurtzite Be-doped GaN
Dewsnip D.J., Andrianov A.V., Harrison I., Orton J.W., Lacklison D.E., Ren G.B., Hooper S.E., Cheng T.S., Foxon C.T.
Semicond. Sci. Technol., Vol: 13, No: 5 , 1998
Sulphide passivation of GaAs: The role of the sulphur chemical activity
Bessolov V.N., Lebedev M.V., Binh N.M. et al.
Semicond. Sci. Technol., Vol: 13, No: 6 , 1998
Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
Rao E.V.K., Theys B., Benchimol J.L., Chevallier J.
Semicond. Sci. Technol., Vol: 13, No: 6 , 1998
Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation
Wyllie C.K.W., Thompson D.A.
Semicond. Sci. Technol., Vol: 13, No: 7 , 1998
Current filamenation in point contact geometry and its 2D stationary model
Novak V., Hirschinger J., Prettl W., Niedernostheide F.-J.
Semicond. Sci. Technol., Vol: 13, No: 7 , 1998
Optical spectroscopy of titanium-doped CdZnTe
Dammak M., Alaya S., Zerra A., Bremond G., Triboulet R.
Semicond. Sci. Technol., Vol: 13, No: 7 , 1998
Phonon-assisted photoluminescence in wurtzite GaN epilayer
Liu W., Li M.F., Xu S.J., Uchida K., Matsumoto K.
Semicond. Sci. Technol., Vol: 13, No: 7 , 1998
The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence
Buda B., Wang C., Wrede W., et al.
Semicond. Sci. Technol., Vol: 13, No: 8 , 1998
MBE growth and characterization of magnesium-doped gallium nitride
Dewsnip D.J., Orton J.W., Lacklison D.E., et al.
Semicond. Sci. Technol., Vol: 13, No: 8 , 1998
Optical and electrical characterization of low temperature grown GaInAs
Khirouni K., Alaya S., Nagle J. et al.
Semicond. Sci. Technol., Vol: 13, No: 9 , 1998
Light emission from individual InAs/GaAs self-assembled quantum dots excited by tunneling current injection
Yamanaka K., Ishida S., Suzuki K., Hayashi H., Watabe H., Arakawa Y.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Excitons, spin-waves and Skyrmions in the optical spectra of a two dimensional electron gas
Osborne J.L., Shields A.J., Simmons M.Y., Cooper N.R., Ritchie D.A., Pepper M.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Microphotoluminescence studies of high quality single quantum wires
Voliotis V., Bellessa J., Grousson R., Wang X.L., Ogura M., Matsuhata H.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Electro-optic properties of InGaAs/GaAs quantum wires with V-shaped profile
Rinaldi R., Passaseo A., De Giorgi M., Turco C., DeVittorio M., Cannoletta D., Cingolani R.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Multiphonon photoluminescence and Raman scattering in semiconductor quantum dots
Fomin V.M., Pokatilov E.P., Devreese J.T., Klimin S.N., Gladilin V.N., Balaban S.N
Solid State Commun., Vol: 42, No: 7-8 , 1998
Optical properties of hydrogen terminated silicon nanocrystals
Kanemitsu Y., Okamoto S.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Time-resolved luminescence study of InP quantum dots in GaInP matrix
Okuno T., Ren H.-W., Sugisaki M., Nishi K., Sugou S., Masumoto Y.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Sharp photoluminexcence lines of InAs quantum dot embedded in GaAs mesa
Sugisaki M., Ren H.-W., Sugou S., Nishi K., Masumoto Y.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Matrix-dependent structural and photoluminescence properties of In[0.5]Ga[0.5]As quantum dots grown by molecular beam epitaxy
Nee T.-E., Yeh N.-T., Chyi J.-I., Lee C.-N.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots
Motohisa J., Baumberg J.J., Heberle A.P., Allam J.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses
Sakuma Y., Awano Y., Futatsugi T., Yokoyama N., Uchida K., Miura N.
Solid State Commun., Vol: 42, No: 7-8 , 1998
A novel wrap-gatecontrolled single electron transistor formed on an InGaAs ridge quantum wire grown by selective MBE
Okada H., Fujikura H., Hashizume T., Hasegawa H.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Inversion of electron sub-band population in a GaAs/AlGaAs triple barrier tunnelling structure
Li Y.B., Cockburn J.W., Larkin I.A., Duck J.P., Birkett M.J., Skolnick M.S., Hopkinson M., Grey R., Hill G.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Extremely uniform In[0.08]Ga[0.92]As/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy
Kitada T., Saeki T., Ohashi M., Shimomura S., Hiyamizu S.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)[4](AlAs)[2] quantum wires grown on (775)B-oriented GaAs substrates
Higashiwaki M., Kuroyanagi K., Fujita K., Egami N., Shimomura S., Hiyamizu S.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Formation and optical properties of carbon-induced Ge dots
Eberl K., Schmidt O.G., Schieker S., Jin-Phillipp N.Y., Phillipp F.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy
Shim B.-R., Torii S., Ota T., Kobayashi K., Maehashi K., Hasegawa S., Inoue K., Nakashima H.
Solid State Commun., Vol: 42, No: 7-8 , 1998
Electrical and optical characterisation of heavily doped GaAs:C bases of heterojunction bipolar transistors
Lye B.C., Houston P.A., Button C.C. et al.
Solid-State Electron., Vol: 42, No: 1 , 1998
Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
Iancu V., Ciurea M.L.
Solid-State Electron., Vol: 42, No: 10 , 1998
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
Polyakov A.Y., Smirnov N.B., Usikov S.S., Govorkov A.V., Pushniy B.V.
Solid-State Electron., Vol: 42, No: 11 , 1998
Preparation, characterization and application of microscopic linear Hall probe arrays
Cambel V., Elias P., Kudela R. et al.
Solid-State Electron., Vol: 42, No: 2 , 1998
MOCVD growth of In[x]Ga[1-x]As/GaAs multiple quantum well and superlattice structures for optical modulators
Hasenohrl S., Kucera M., Novak J. et al.
Solid-State Electron., Vol: 42, No: 2 , 1998
Люминесценция гетероэпитаксиальных пленок кремния на сапфире
Коршунов Ф.П., Мудрый А.В., Патук А.И., Шакин И.А.
Докл. АН Беларуси., Vol: 42, No: 4 , 1998
Luminescence quenching in cobalt doped ZnO:Sm,Li
Kynev K., Maneva N., Grigorov L.
Докл. Бълг. АН., Vol: 51, No: 5-6 , 1998
Фазовая диаграмма системы галлий-селен и спектры фотолюминесценции кристаллов GaSe
Штанов В.И., Комов А.А., Тамм М.Е., Атрашенко Д.В., Зломанов В.П.
Докл. РАН, Vol: 361, No: 3 , 1998
Фотолюминесцентная спектроскопия квазидвумерного электронного газа в δ-легированных слоях GaAs(100)
Мокеров В.Г., Федоров Ю.В., Гук А.В., Хабаров Ю.В.
Докл. РАН, Vol: 362, No: 1 , 1998
Фотолюминесценция двумерного электронного газа в метаморфных N-InAlAs/InGaAs/InAlAs-гетероструктурах на подложках GaAs(100)
Мокеров В.Г., Федоров Ю.В., Гук А.В., Яременко Н.Г., Страхов В.А.
Докл. РАН, Vol: 362, No: 2 , 1998
Транспортные свойства и фотолюминесценция двумерного электронного газа в псевдоморфных квантовых ямах N-AlGaAs/InGaAs/GaAs
Мокеров В.Г., Федоров Ю.В., Гук А.В., Хабаров Ю.В.
Докл. РАН, Vol: 362, No: 3 , 1998
Фотолюминесценция монокристаллов диарсенида кадмия
Мудрый А.В., Патук А.И., Трухан В.М., Шакин И.А., Маренкин С.Ф.
Ж. прикл. спектроскопии, Vol: 65, No: 1 , 1998
Рекомбинационное излучение кристаллов ZnTe с p-n-переходом, сформированным методом лазерного легирования
Иодко В.Н., Грибковский В.П., Беляева А.К., Супрун-Белевич Ю.Р., Кетько Ж.А.
Ж. прикл. спектроскопии, Vol: 65, No: 3 , 1998
Оптические свойства наночастиц CuIn[S] в области фундаментального края поглощения
Гуринович Л.И., Гурин В.С., Иванов В.А., Молочко А.П., Соловей Н.П.
Ж. прикл. спектроскопии, Vol: 65, No: 3 , 1998
Влияние температуры на фотолюминесценцию монокристаллов p-CuGaSe[2]
Бондарь И.В., Иванов В.А.
Ж. прикл. спектроскопии, Vol: 65, No: 4 , 1998
Влияние последовательного электронного и лазерного облучения на флюоресценцию пористого кремния
Костишко Б.М., Орлов А.М.
Ж. техн. физ., Vol: 68, No: 3 , 1998
Особенности разрешенной во времени фотолюминесценции систем пористый кремний-алмазоподобная пленка углерода
Пирятинский Ю.П., Семенович В.А., Клюй Н.И., Рожин А.Г.
Ж. техн. физ., Vol: 68, No: 4 , 1998
Долгоживущие возбужденные состояния и спектры возбуждения фотолюминесценции в монокристаллах фуллерена C[60]
Кведер В.В., Негрии В.Д., Штейман Э.А., Изотов А.Н., Осипьян Ю.А., Николаев Р.К.
Ж. эксперим. и теор. физ., Vol: 113, No: 2 , 1998
Магнитнолюминесценция гетероструктур Ge/Ge[1-x]Si[x]
Черненко А.В., Калугин Н.Г., Кузнецов О.А.
Ж. эксперим. и теор. физ., Vol: 114, No: 2 , 1998
Энергетическая релаксация и транспорт непрямых экситонов в двойных квантовых ямах AlAs/GaAs в магнитных полях
Бутов Л.В., Филин А.И.
Ж. эксперим. и теор. физ., Vol: 114, No: 3 , 1998
Экситон-фотонное взаимодействие в низкоразмерных полупроводниковых микрорезонаторах
Кулаковский В.Д., Коваль Ю.И., Борзенко Т.Б., Форхел А., Рейтмайер Й.П.
Ж. эксперим. и теор. физ., Vol: 114, No: 4 , 1998
Электрофизические свойства слоев ZnSeCd
Махний Е.В., Фодчук И.М.
Изв. вузов. Физ., Vol: 41, No: 2 , 1998
Нелинейная спектроскопия фосфатных стекол с наночастицами селенида кадмия
Юмашев К.В., Маляревич А.М., Поснов Н.Н., Михайлов В.П., Липовский А.А., Колобкова Е.В., Петриков В.Д.
Квант. электрон., Vol: 25, No: 8 , 1998
Исследование спектров слоистого титаната висмута
Мясникова Т.П., Гах С.Г., Шалаев В.Н.
Кристаллография, Vol: 43, No: 3 , 1998
Оптические и фотолюминесценцентные свойства нанокристаллов Si, внедренных в матрицу SiO[2]
Бару В.Г., Елинсон М.И., Житов В.А. и др.
Микроэлектроника, Vol: 27, No: 1 , 1998
Электрические и люминесцентные свойства моно кристаллов n-ZmSe, легированного натрием
Иванова Г.Н., Касиян В.А., Недеогло Д.Д.
Неорган. матер., Vol: 34, No: 12 , 1998
Влияние π-толуидина, нестехиометрии и легирования на интенсивность фотолюминесценции монокристаллов CdSe, CdS
Петрыкин В.В., Один И.Н., Зломанов В.П., Занг Дж.Дж.
Неорган. матер., Vol: 34, No: 2 , 1998
Фотолюминесценция стекол на основе халькогенидов лантана
Зобов Е.М., Бабаев А.А., Соколов В.В., Шарапудинова А.Х.
Неорган. матер., Vol: 34, No: 5 , 1998
Влияние отжига в парах собственных компонентов на желтую полосу свечения кристаллов и пленок ZnS:Mn{2+}
Георгобиани А.Н., Грузинцев А.Н., Волков В.Т., Юнь Сю Сю, Зидонг Лоу
Неорган. матер., Vol: 34, No: 8 , 1998
Фотолюминесценция кристаллов p-ZnSLi
Махний В.П., Слетов М.М., Чабан Ю.Я.
Неорган. матер., Vol: 34, No: 9 , 1998
Температурная эволюция полосы переноса заряда и вибронное взаимодействие в кристалле ZnS-Cr
Рыскин А.И., Зингер Г.М., Чикалова-Лузина О.П., Васильев А.В., Казанский С.А.
Оптика и спектроскопия, Vol: 84, No: 1 , 1998
Квантовый выход люминесценции иона хрома в селениде цинка при ее возбуждении в полосе переноса заpяда
Васильев А.В., Казанский С.А., Рыскин А.И.
Оптика и спектроскопия, Vol: 84, No: 3 , 1998
Обобщение модели Бонифачио-Луджиато для случая учета экситон-экситонных, экситон-биэкситонных и биэкситон-биэкситонных упругих взаимодействий
Пасечник О.Ф., Хаджи П.И.
Оптика и спектроскопия, Vol: 84, No: 5 , 1998
Роль собственных дефектов ф ормировании ультрафиолетового излучения нитрида галлия
Слетов М.М.
Оптика и спектроскопия, Vol: 85, No: 4 , 1998
Самоорганизованные наноразмерные кластеры InP и InAsP, полученные методом МОС-гидридной эпитаксии
Винокуров Д.А., Капитонов В.А., Коваленков О.В., Лившиц Д.А., Тарасов И.С.
Письма в ЖТФ, Vol: 16, No: 16 , 1998
Фотолюминесценция и деградационные свойства карбонизированного пористого кремния
Костишко Б.М., Атажанов Ш.Р., Миков С.Н.
Письма в ЖТФ, Vol: 16, No: 16 , 1998
Получение GaN молекулярно-пучковой эпитаксией с активацией азота ВЧ-емкостным магнетронным разрядом
Мамутин В.В., Жмерик В.Н., Шубина Т.В., Торопов А.А., Лебедев А.В., Векшин В.А., Иванов С.В., Копьев П.С.
Письма в ЖТФ, Vol: 24, No: 12 , 1998
Низкотемпературная фотолюминесценция тверды- растворов InGaP, облученных тяжелыми ионами
Бхаттачарья Д., Винокуров Д.А., Гусинский Г.М., Елюхин В.А., Коваленко О.В., Кютт Р.Н., Марш Д., Найденов В.О., Портной Е.Л.
Письма в ЖТФ, Vol: 24, No: 17 , 1998
Фотолюминесценция кристаллов A{2}B{4}C[2]{5} и A{1}B{3}C[2]{6}, пассивированных в сульфидном растворе
Бессолов В.Н., Лебедев М.В., Рудь В.Ю., Рудь Ю.В.
Письма в ЖТФ, Vol: 24, No: 22 , 1998
Фотолюминесценция n-GaN: влияние химической обработки поверхности в растворах сульфидов
Жиляев Ю.В., Компан М.Е., Коненкова Е.В. и др.
Письма в ЖТФ, Vol: 24, No: 24 , 1998
Свойства твердых растворов GaInAsSb в области спинодального распада, полученных из сурьмянистых растворов-расплавов методом жидкофазной эпитаксии
Васильев В.И., Дерягин А.Г., Кучинский В.И., и др.
Письма в ЖТФ, Vol: 24, No: 6 , 1998
Длинноволновые неохлаждаемые источники излучения λ=5-6μm на основе градиентных слоев InAsSb(P), полученных методом жидкофазной эпитаксии
Айдаралиев М., Зотова Н.В., Карандашев С.А., и др.
Письма в ЖТФ, Vol: 24, No: 6 , 1998
Самоорганизующиеся наноостровки германия в кремнии, полученные методом молекулярно-лучевой эпитаксии
Алешкин В.Я., Бекин Н.А., Калугин Н.Г., Красильник З.Ф., Новиков А.В., Постников В.В., Сейрингер Х.
Письма в ЖЭТФ, Vol: 67, No: 1-2 , 1998
Эффективная фотолюминесценция из треугольных квантовых ям на границе гетероструктуры InP/In[0,53]Ga[0,47]As
Нолле Э.Л., Прохоров А.М.
Письма в ЖЭТФ, Vol: 67, No: 9-10 , 1998
Дискретное туннелирование дырок в пористом кремнии
Демидов Е.С., Карзанов В.В., Шенгуров В.Г.
Письма в ЖЭТФ, Vol: 67, No: 9-10 , 1998
Выращивание квантовых ям GaAsSb/GaAs методом МОС-гидридной эпитаксии с помощью лазерного распыления сурьмы
Алешкин В.Я., Ахлестина С.А., Звонков Б.Н., Малкина И.Г., Ускова Е.А.
Письма в ЖЭТФ, Vol: 68, No: 1-2 , 1998
Двумерные экситоны и водородоподобные примеси на искривленной поверхности
Магарилл Л.И., Чаплик А.В.
Письма в ЖЭТФ, Vol: 68, No: 1-2 , 1998
Свободные и локализованные положительно заряженные экситоны в спектре излучения GaAs/AlGaAs квантовых ям
Волков О.В., Кукушкин И.В., фон Клитцинг К., Эберл К.
Письма в ЖЭТФ, Vol: 68, No: 3-4 , 1998
Свободные и локализованные экситоны в спектре люминесценции кристаллов C[60] при высоком давлении
Мелетов К.П., Негрий В.Д.
Письма в ЖЭТФ, Vol: 68, No: 3-4 , 1998
Магнитоэкситоны в квантовых точках второго типа
Каламейцев А.В., Говоров А.О., Ковалев В.М.
Письма в ЖЭТФ, Vol: 68, No: 7-8 , 1998
Обнаружение двухступенчатого процесса возбуждения фотолюминесценции в кремниевых наноструктурах
Головань Л.А., Гончаров А.А., Тимошенко В.Ю. и др.
Письма в ЖЭТФ, Vol: 68, No: 9-10 , 1998
The inversion of conductivity type in wide-band-gap compounds A[2]B[6] by quasi-epitaxy method
Butkhuzi T., Khulordava T., Kekelidze N. et al.
Bull. Georg. Nat. Acad. Sci., Vol: 158, No: 1 , 1998
Люмiнесцентнi методи визначення теплофiзичних параметрiв широкозонних напiвпровiдникiв
Цюпа А.М., Степко М.Ф.
Укр. фiз. ж., Vol: 43, No: 10 , 1998
Природа червоноi люмiнесценцii в поруватому кремнii
Шутов Б.М., Даценко О.I.
Укр. фiз. ж., Vol: 43, No: 4 , 1998
Удосконалення структури МПЕ-плiвки GaAs за рахунок гетерування попередньо внесеним набором δ-легованих шарiв
Бачерiков Ю.Ю., Ничипорук Б.Д., Охрiменко О.Б., Родiонов В.Е., Рудько Г.Ю., Юхимчук В.А.
Укр. фiз. ж., Vol: 43, No: 3 , 1998
Фотолюмiнесценцiя аморфного карбiду кремнiю
Бережинський Л.Й., Власкiт В.I., Власкiна С.I., Родiонов В.Е.
Укр. фiз. ж., Vol: 43, No: 5 , 1998
Междуямная излучательная рекомбинация двумерного электронного газа в двойных квантовых ямах с напряжением смещения
Тимофеев В.Б., Ларионов А.В., Земан Дж., Мартинез Г., Хвам Дж., Биркедал Д., Соеренсен К.
Успехи физ. наук, Vol: 168, No: 2 , 1998
Процессы отдачи в двумерном электронном газе в GaAs/AlGaAs квантовых ямах в сильных магнитных полях
Финкельштейн Г., Штрикман Х., Бар-Джозеф И.
Успехи физ. наук, Vol: 168, No: 2 , 1998
Экситонные комплексы в InGaAs/GaAs квантовых точках
Кулаковский В.Д., Бауэр М., Михель М., Форхел А., Гутброд Т., Фаллер Ф.
Успехи физ. наук, Vol: 168, No: 2 , 1998
Аномальный транспорт и люминесценция непрямых экситонов в двойных квантовых ямах
Бутов Л.В.
Успехи физ. наук, Vol: 168, No: 2 , 1998
Проявление квантового хаоса в магнитоэкситонном спектре квантовых ям
Винья Л., Потемски М., Ванг В.И.
Успехи физ. наук, Vol: 168, No: 2 , 1998
Динамика неравновесных носителей заряда в кремниевых квантовых нитях
Кашкаров П.К., Каменев Б.В., Константинова Е.А., Ефимова А.И., Павликов А.В., Тимошенко В.Ю.
Успехи физ. наук, Vol: 168, No: 5 , 1998
Исследование тонких пленок GaN, подвергнутых кратковременному высокотемпературному отжигу
Кацавец Н.И.
Физ. и техн. полупроводников , Vol: 32, No: 10 , 1998
Новый центр рекомбинации в сильно легированном цинком арсениде галлия, полученном методом жидкофазной эпитаксии
Журавлев К.С., Шамирзаев Т.С., Якушева Н.А., Петренко И.П.
Физ. и техн. полупроводников , Vol: 32, No: 10 , 1998
Влияние неоднородности пространственного распределения неравновесных носителей на спектры краевого излучения прямозонных полупроводников
Лукашевич П.Г.
Физ. и техн. полупроводников , Vol: 32, No: 10 , 1998
Оптоэлектронные явления в слоях, полученных нитрированием GaP и GaAs
Агекян В.Ф., Иванов-Омский В.И., Князевский В.Н., Рудь В.Ю., Рудь Ю.В.
Физ. и техн. полупроводников , Vol: 32, No: 10 , 1998
Фотолюминесценция области пространственного заряда контактов металл-селенид цинка
Махний В.П., Слетов М.М.
Физ. и техн. полупроводников , Vol: 32, No: 10 , 1998
Поляризация фотолюминесценции вдоль плоскости квантово-размерных слоев структур InAs/Ga(In)As, выращенных методом МОС-гидридной эпитаксии
Алешкин В.Я., Звонков Б.Н., Малкина И.Г., Сафьянов Ю.Н., Филатов Д.О., Чернов А.Л.
Физ. и техн. полупроводников , Vol: 32, No: 10 , 1998
Влияние кристаллографической ориентации поверхности роста при молекулярно-лучевой эпитаксии на оптические свойства легированных кремнием слоев арсенида галлия
Мокеров В.Г., Галиев Г.Б., Слепнев Ю.В., Хабаров Ю.В.
Физ. и техн. полупроводников , Vol: 32, No: 11 , 1998
Влияние индуцированных лазерным излучением дефектов на люминесценцию кристаллов InP
Баимбетов Ф.Б., Джумамухамбетов Н.Г.
Физ. и техн. полупроводников , Vol: 32, No: 11 , 1998
Влияние кислорода на интенсивность фотолюминесценции Er (1,54 мкм) в пленках a-Si:H, легированных эрбием
Кудоярова В.Х., Кузнецов А.Н., Теруков Е.И., Гусев О.Б., Кудрявцев Ю.А., Бер Б.Я., Гусинский Г.М.
Физ. и техн. полупроводников , Vol: 32, No: 11 , 1998
Трансформация центров безызлучательной рекомбинации в структурах с GaAs/AlGaAs-квантовыми ямами, обработанными в CF[4]-плазме, при низкотемпературном отжиге
Журавлев К.С., Соколов А.Л., Могильников К.П.
Физ. и техн. полупроводников , Vol: 32, No: 12 , 1998
Оптические спектры микрокристаллов слоистого полупроводника PbI[2], выращенных в стеклянных матрицах
Аблицова А.С., Агекян В.Ф., Серов А.Ю.
Физ. и техн. полупроводников , Vol: 32, No: 2 , 1998
Возбужденные состояния ионов халькогенов в германии
Ушаков А.Ю., Штеренгас Р.М., Штеренгас Л.М., Радчук Н.Б.
Физ. и техн. полупроводников , Vol: 32, No: 2 , 1998
Влияние способа легирования кристаллов n-ZnSe медью на структуру центров длинноволновой люминесценции
Иванова Г.Н., Касиян В.А., Недеогло Д.Д., Опря С.В.
Физ. и техн. полупроводников , Vol: 32, No: 2 , 1998
Структура центров и механизмы высокотемпературного голубого излучения селенида цинка
Иванова Г.Н., Касиян В.А., Недеогло Н.Д., Симашкевич А.В.
Физ. и техн. полупроводников , Vol: 32, No: 2 , 1998
Фотолюминесценция рекристаллизованного наносекундным лазерным облучением теллурида кадмия
Бабенцов В.Н., Тарбаев Н.И.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Влияние интенсивности γ-излучения на фотолюминесценцию GaAs:Te
Дубовик В.И., Богданова В.А., Давлеткильдеев Н.А., Семиколенова Н.А., Шутяк О.А.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Оптические характеристики комплексов, связанных с 1.18 эВ полосой люминесценции при поляризованном резонансном возбуждении
Гуткин А.А., Пиотровский Т., Пулторак Е., Рещиков М.А., Седов В.Е.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Связанные с марганцем центры рекомбинации в эпитаксиальном GaAs, выращенном из расплава висмута
Журавлев К.С., Шамирзаев Т.С., Якушева Н.А.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Формирование квантовых точек InAs в матрице GaAs при росте на разориентированных подложках
Цацульников А.Ф., Воловик Б.В., Леденцов Н.Н., Максимов М.В., Егоров А.Е., Жуков А.Е., Ковш А.Р., Устинов В.М., Чжень Ч., Петров В.Н., Цырлин Г.Э., Бимберг Д., Копьев П.С., Алферов Ж.И.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Влияние метастабильных состояний на высвечивание экситонов в n-GaAs
Криволапчук В.В., Полетаев Н.К.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Гетероструктуры с квантовыми точками: получение, свойства, лазеры. Обзор
Леденцов Н.Н., Устинов В.М., Щукин В.А., Копьев П.С., Алферов Ж.И., Бимберг Д.
Физ. и техн. полупроводников , Vol: 32, No: 4 , 1998
Излучение квантово-размерных структур InGaAs.I.Спектры спонтанного излучения
Елисеев П.Г., Акимова И.В.
Физ. и техн. полупроводников , Vol: 32, No: 4 , 1998
Излучение квантово-размерных структур InGaAs.II.Форм-фактор однородного уширения
Елисеев П.Г., Акимова И.В.
Физ. и техн. полупроводников , Vol: 32, No: 4 , 1998
Влияние термических отжигов и химических воздействий на фотолюминесценцию пористого кремния
Шелонин Е.А., Найденкова М.В., Хорт А.М., Яковенко А.Г., Гвелесиани А.А., Марончук И.Е.
Физ. и техн. полупроводников , Vol: 32, No: 4 , 1998
Влияние ультрафиолетового облучения на люминесценцию и оптические свойства пленок ZnS:Mn
Кононец Я.Ф., Велигура Л.И., Остроухова О.А.
Физ. и техн. полупроводников , Vol: 32, No: 5 , 1998
Прыжковая энергетическая релаксация с учетом всевозможных межцентровых переходов
Киселев А.А.
Физ. и техн. полупроводников , Vol: 32, No: 5 , 1998
Анализ изменений интенсивности собственной люминесценции, происходящих после диффузии меди в полуизолирующие нелегированные кристаллы арсенида галлия
Воробкало Ф.М., Глинчук К.Д., Прохорович А.В.
Физ. и техн. полупроводников , Vol: 32, No: 5 , 1998
Роль макродефектов в электронных и ионных процессах, протекающих в широкозонных полупроводниках A{II}B{VI}
Джумаев Б.Р.
Физ. и техн. полупроводников , Vol: 32, No: 6 , 1998
Самоорганизующиеся наногетероструктуры в твердых растворах InGaAsP
Вавилова Л.С., Иванова А.В., Капитонов В.А., Мурашова А.В., Тарасов И.С., Арсентьев И.Н., Берт Н.А., Мусихин Ю.Г., Пихтин Н.А., Фалеев И.С.
Физ. и техн. полупроводников , Vol: 32, No: 6 , 1998
О природе марганцевых центров свечения в монокристаллах сульфида цинка
Буланый М.Ф., Полежаев Б.А., Прокофьев Т.А.
Физ. и техн. полупроводников , Vol: 32, No: 6 , 1998
Свойства легированных марганцем слоев арсенида галлия, выращенных методом жидкофазной эпитаксии из расплава висмута
Журавлева К.С., Шамирзаев Т.С., Якушева Н.А.
Физ. и техн. полупроводников , Vol: 32, No: 7 , 1998
Донорно-акцепторная рекомбинация в короткопериодных сверхрешетках GaAs/AlAs, легированных кремнием
Решина И.И., Планель Р.
Физ. и техн. полупроводников , Vol: 32, No: 7 , 1998
Импульсные исследования диодных структур на основе кремний-водородных пленок
Белов С.В., Лебедев А.А.
Физ. и техн. полупроводников , Vol: 32, No: 7 , 1998
Исследование приборных характеристик низкопорогового лазера на квантовых точках,излучающего на 1,9 мкм
Жуков А.Е., Егоров А.Ю., Ковш А.Р., Устинов В.М., Зайцев С.В., Гордеев Н.Ю., Копчатов В.И., Лунев А.В., Цацульников А.Ф., Воловик Б.В., Леденцов Н.Н., Копьев П.С.
Физ. и техн. полупроводников , Vol: 32, No: 7 , 1998
Synthesis and properties of Ge-Sb-S:NdCl[3] glasses
Frumarova B., Nemec P., Fruman M., Oswald J.
Физ. и техн. полупроводников , Vol: 32, No: 8 , 1998
Люминесценция эрбия в гидрогенизированном кремнии, прлученном методом тлеющего разряда
Теруков Е.И., Коньков О.И., Кудоярова В.Х., Гусев О.Б., Вайзер Г.
Физ. и техн. полупроводников , Vol: 32, No: 8 , 1998
Поглощение света и фотолюминесценция пористого кремния
Образцов А.Н., Караванский В.А., Окуши Х., Ватанабе Х.
Физ. и техн. полупроводников , Vol: 32, No: 8 , 1998
Физические свойства монокристаллов твердых растворов Cu[x]Ag[1-x]In[5]S[8] и поверхностно-барьерных структур на их основе
Боднарь И.В., Кудрицкая Е.А., Полушина И.К., Рудь В.Ю., Рудь Ю.В.
Физ. и техн. полупроводников , Vol: 32, No: 9 , 1998
Оптические свойства легированных кремнием слоев GaAs (100), выращенных методом молекулярно-лучевой эпитаксии
Мокеров В.Г., Федоров Ю.В., Гук А.В., Галиев Г.Б., Страхов В.А., Яременко Н.Г.
Физ. и техн. полупроводников , Vol: 32, No: 9 , 1998
Определение систем скольжения дислокаций в монокристаллах CdS методом низкотемпературной фотолюминесценции
Тарбаев Н.И.
Физ. тверд. тела, Vol: 40, No: 10 , 1998
Спектры излучения при релаксации экситона на флуктуации локальной намагниченности в полумагнитных полупроводниках
Кудинов А.В., Кусраев Ю.Г.
Физ. тверд. тела, Vol: 40, No: 12 , 1998
Резонансная оптическая ориентация и выстраивание экситонов в сверхрешетках
Кочерешко В.П., Ивченко Е.Л., Яковлев Д.Р., Лаваллар Ф.
Физ. тверд. тела, Vol: 40, No: 12 , 1998
Фотолюминесценция и многофононное комбинационное рассеяние света в кристаллах Zn[1-x]Mn[x]Te, легированных Ni и Co
Гнатенко Ю.П., Шигильчев О.А., Рутковский Е., Контрерас-Пуэнте Г., Гарсия М.Г.
Физ. тверд. тела, Vol: 40, No: 4 , 1998
Особенности рекомбинации носителей зарядов в аморфных молекулярных полупроводниках, допированных полиметиновыми красителями
Давиденко Н.А., Ищенко А.А.
Физ. тверд. тела, Vol: 40, No: 4 , 1998
Аномальное воздействие магнитного поля на непрямой экситон в двойных квановых ямах GaAs/AlGaAs
Криволапчук В.В., Мазуренко Д.А., Москаленко Е.С., Полетаев Н.К., Жмодиков А.Л., Ченг Т.С., Фоксон С.Т.
Физ. тверд. тела, Vol: 40, No: 5 , 1998
Магнито-экситоны в приповерхностных квантовых ямах: эксперимент и теория
Кулаковский В.Д., Кулик Л.В.,