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   Radiophysics. Physical electronics.
      Electron difraction.
         High energy electron difraction.
Magnetic two-dimensional electron gases with high Curie temperatures at LaAlO3/SrTiO3:Fe interfaces
Hongrui Zhang, Xi Yan, Hui Zhang, Fei Wang, Youdi Gu, Xingkun Ning, Tahira Khan, Rui Li, Yuansha Chen, Wei Liu, Shufang Wang, Baogen Shen, and Jirong Sun
Phys. Rev. B: Condens. Matter, Vol: 97, No: 15 , published: 23 April 2018
Role of defects in the carrier-tunable topological-insulator (Bi1xSbx)2Te3 thin films
Kane L. Scipioni, Zhenyu Wang, Yulia Maximenko, Ferhat Katmis, Charlie Steiner, and Vidya Madhavan
Phys. Rev. B: Condens. Matter, Vol: 97, No: 12 , published: 28 March 2018
Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films
Fei Wang, Hongrui Zhang, Jue Jiang, Yi-Fan Zhao, Jia Yu, Wei Liu, Da Li, Moses H. W. Chan, Jirong Sun, Zhidong Zhang, and Cui-Zu Chang
Phys. Rev. B: Condens. Matter, Vol: 97, No: 11 , published: 13 March 2018
Giant (12×12) and (4×8) reconstructions of the 6H-SiC(0001) surface obtained by progressive enrichment in Si atoms
David Martrou, Thomas Leoni, Florian Chaumeton, Fabien Castanié, Sébastien Gauthier, and Xavier Bouju
Phys. Rev. B: Condens. Matter, Vol: 97, No: 8 , published: 23 February 2018
Gapped electronic structure of epitaxial stanene on InSb(111)
Cai-Zhi Xu, Yang-Hao Chan, Peng Chen, Xiaoxiong Wang, David Flötotto, Joseph Andrew Hlevyack, Guang Bian, Sung-Kwan Mo, Mei-Yin Chou, and Tai-Chang Chiang
Phys. Rev. B: Condens. Matter, Vol: 97, No: 3 , published: 11 January 2018
Gapped electronic structure of epitaxial stanene on InSb(111)
Cai-Zhi Xu, Yang-Hao Chan, Peng Chen, Xiaoxiong Wang, David Flötotto, Joseph Andrew Hlevyack, Guang Bian, Sung-Kwan Mo, Mei-Yin Chou, and Tai-Chang Chiang
Phys. Rev. B: Condens. Matter, Vol: 97, No: 3 , published: 11 January 2018
Lattice dynamics of ultrathin FeSe films on SrTiO3
Shuyuan Zhang, Jiaqi Guan, Yan Wang, Tom Berlijn, Steve Johnston, Xun Jia, Bing Liu, Qing Zhu, Qichang An, Siwei Xue, Yanwei Cao, Fang Yang, Weihua Wang, Jiandi Zhang, E. W. Plummer, Xuetao Zhu, and Jiandong Guo
Phys. Rev. B: Condens. Matter, Vol: 97, No: 3 , published: 08 January 2018
Structural and magnetic phase transitions in chromium nitride thin films grown by rf nitrogen plasma molecular beam epitaxy
Khan Alam, Steven M. Disseler, William D. Ratcliff, Julie A. Borchers, Rodrigo Ponce-Pérez, Gregorio H. Cocoletzi, Noboru Takeuchi, Andrew Foley, Andrea Richard, David C. Ingram, and Arthur R. Smith
Phys. Rev. B: Condens. Matter, Vol: 96, No: 10 , published: 25 September 2017
Evolution of magnetic properties in the vicinity of the Verwey transition in Fe3O4 thin films
X. H. Liu, W. Liu, and Z. D. Zhang
Phys. Rev. B: Condens. Matter, Vol: 96, No: 9 , published: 05 September 2017
Electronic structure and direct observation of ferrimagnetism in multiferroic hexagonal YbFeO3
Shi Cao, Kishan Sinha, Xin Zhang, Xiaozhe Zhang, Xiao Wang, Yuewei Yin, Alpha T. N'Diaye, Jian Wang, David J. Keavney, Tula R. Paudel, Yaohua Liu, Xuemei Cheng, Evgeny Y. Tsymbal, Peter A. Dowben, and Xiaoshan Xu
Phys. Rev. B: Condens. Matter, Vol: 95, No: 22 , published: 26 June 2017
Origin of perpendicular magnetic anisotropy in epitaxial Pd/Co/Pd(111) trilayers
A. V. Davydenko, A. G. Kozlov, A. V. Ognev, M. E. Stebliy, A. S. Samardak, K. S. Ermakov, A. G. Kolesnikov, and L. A. Chebotkevich
Phys. Rev. B: Condens. Matter, Vol: 95, No: 6 , published: 28 February 2017
Structure of MnSi on SiC(0001)
S. A. Meynell, A. Spitzig, B. Edwards, M. D. Robertson, D. Kalliecharan, L. Kreplak, and T. L. Monchesky
Phys. Rev. B: Condens. Matter, Vol: 94, No: 18 , published: 14 November 2016
Growth, structure, and electronic properties of nonpolar thin films on a polar substrate: Cr2O3 on ZnO (0001) and ZnO (0001¯)
X. Zhu, M. D. Morales-Acosta, J. Shen, F. J. Walker, J. J. Cha, and E. I. Altman
Phys. Rev. B: Condens. Matter, Vol: 92, No: 16 , published: 14 October 2015
Low-temperature B2 ordering and magnetic properties of Fe100xRhx films on bcc alloys
S. Yamada, K. Tanikawa, J. Hirayama, T. Kanashima, T. Taniyama, and K. Hamaya
Phys. Rev. B: Condens. Matter, Vol: 92, No: 9 , published: 10 September 2015
Growth of Si1−xySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline properties
Takashi Yamaha, Masashi Kurosawa, Wakana Takeuchi, Osamu Nakatsuka and Shigeaki Zaima
Jpn. J. Appl. Phys., Part 1, Vol: 54, No: 8S1 , published: 01 August 2015
Regular step distribution of the bare Si(553) surface
M. Kopciuszyński, P. Dyniec, R. Zdyb, and M. Jałochowski
Phys. Rev. B: Condens. Matter, Vol: 91, No: 23 , published: 15 June 2015
Fabrication and crystal structure of [ABO3/REMO3] (A = Ca, La, B = Fe, Mn, RE = Bi, La, M = Fe, Fe0.8Mn0.2) superlattices grown by pulsed laser deposition method
Yuta Watabe, Nobuyuki Iwata, Takahiro Oikawa, Takuya Hashimoto, Mark Huijben, Guus Rijnders, Hiroshi Yamamoto
Jpn. J. Appl. Phys., Part 2, Vol: 53, No: 5S1 , published: 01 May 2014
Structural, magnetic, and superconducting properties of pulsed-laser-deposition-grown La1.85Sr0.15CuO4/La2/3Ca1/3MnO3 superlattices on (001)-oriented LaSrAlO4 substrates
S. Das, K. Sen, I. Marozau, M. A. Uribe-Laverde, N. Biskup, M. Varela, Y. Khaydukov, O. Soltwedel, T. Keller, M. Döbeli, C. W. Schneider, and C. Bernhard
Phys. Rev. B: Condens. Matter, Vol: 89, No: 9 , published: 12 March 2014
Pb nanoribbons on the Si(553) surface
M. Kopciuszyński, P. Dyniec, M. Krawiec, P. Łukasik, M. Jałochowski, and R. Zdyb
Phys. Rev. B: Condens. Matter, Vol: 88, No: 15 , published: 22 October 2013
Электронная микроскопия структур на основе GaAs с квантовыми точками InAs и As, разделенными барьером AlAs
Неведомский В.Н., Берт Н.А., Чалдышев В.В., Преображенский В.В., Путято М.А., Семягин Б.Р.
Физ. и техн. полупроводников , Vol: 47, No: 9 , published: 01 September 2013
Surface electronic bands of submonolayer Ge on Ag(111)
E. Golias, E. Xenogiannopoulou, D. Tsoutsou, P. Tsipas, S. A. Giamini, and A. Dimoulas
Phys. Rev. B: Condens. Matter, Vol: 88, No: 7 , published: 05 August 2013
Epitaxial Zintl aluminide SrAl4 grown on a LaAlO3 substrate
Lukas Schlipf, Alexander Slepko, Agham B. Posadas, Heidi Seinige, Ajit Dhamdhere, Maxim Tsoi, David J. Smith, and Alexander A. Demkov
Phys. Rev. B: Condens. Matter, Vol: 88, No: 4 , published: 17 July 2013
Characterization of MgO Thin Films Grown on Carbon Materials by Molecular Beam Epitaxy
Satoshi Kobayashi, Shinji Miwa, Frédéric Bonell, Shota Yoshikuni, Takeshi Seki, Masashi Shiraishi, Teruya Shinjo, Norikazu Mizuochi, Yoshishige Suzuki
Jpn. J. Appl. Phys., Vol: 52, No: 7R , published: 01 July 2013
Effect of structural strain on magnetic anisotropy energy of each element in alternately layered FeNi thin films
Masako Sakamaki and Kenta Amemiya
Phys. Rev. B: Condens. Matter, Vol: 87, No: 1 , published: 25 January 2013
Charge transfer and structure of K/Si(111)-2√3×2√3-B surface studied by reflection high-energy positron diffraction
Y. Fukaya, I. Mochizuki, and A. Kawasuso
Phys. Rev. B: Condens. Matter, Vol: 86, No: 3 , published: 16 July 2012
Atomic configuration and phase transition of Pt-induced nanowires on a Ge(001) surface studied using scanning tunneling microscopy, reflection high-energy positron diffraction, and angle-resolved photoemission spectroscopy
Izumi Mochizuki, Yuki Fukaya, Atsuo Kawasuso, Koichiro Yaji, Ayumi Harasawa, Iwao Matsuda, Ken Wada, and Toshio Hyodo
Phys. Rev. B: Condens. Matter, Vol: 85, No: 24 , published: 22 June 2012
Three-Dimensional Reciprocal-Lattice Analysis Using Azimuth-Scan Reflection High-Energy Electron Diffraction: Determination of Complex Crystal Orientations of Al Grains on Si(111) Surface
Ken Hattori, Hideo Oi, Kota Tanaka, Tomohiro Kumagai, and Hiroshi Daimon
Jpn. J. Appl. Phys., Vol: 51, No: 5R , published: 01 May 2012
Localization of two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures
T. Hernandez, C. W. Bark, D. A. Felker, C. B. Eom, and M. S. Rzchowski
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 18 April 2012
Structure of singly terminated polar DyScO3 (110) surfaces
J. E. Kleibeuker, B. Kuiper, S. Harkema, D. H. A. Blank, G. Koster, G. Rijnders, P. Tinnemans, E. Vlieg, P. B. Rossen, W. Siemons, G. Portale, J. Ravichandran, J. M. Szepieniec, and R. Ramesh
Phys. Rev. B: Condens. Matter, Vol: 85, No: 16 , published: 06 April 2012
Properties of the electron-doped infinite-layer superconductor Sr1−xLaxCuO2 epitaxially grown by pulsed laser deposition
J. Tomaschko, V. Leca, T. Selistrovski, S. Diebold, J. Jochum, R. Kleiner, and D. Koelle
Phys. Rev. B: Condens. Matter, Vol: 85, No: 2 , published: 11 January 2012
Stacking behavior of twin-free type-B oriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems
M. H. Zoellner, J. Dabrowski, P. Zaumseil, A. Giussani, M. A. Schubert, G. Lupina, H. Wilkens, J. Wollschläger, M. Reichling, M. Bäumer, and T. Schroeder
Phys. Rev. B: Condens. Matter, Vol: 85, No: 3 , published: 03 January 2012
Structural study of polar MgO(111) epitaxial thin films grown on SrTiO3(111)
Kosuke Matsuzaki, Hironori Takagi, Hideo Hosono, and Tomofumi Susaki
Phys. Rev. B: Condens. Matter, Vol: 84, No: 23 , published: 29 December 2011
Physical origin of in-plane lattice spacing oscillations measured by reflection high-energy electron diffraction during epitaxial growth
J. D. Fuhr and P. Müller
Phys. Rev. B: Condens. Matter, Vol: 84, No: 19 , published: 07 November 2011
Особенности молекулярно-пучковой эпитаксии и структурные свойства гетероструктур на основе AlInSb
Семенов А.Н., Мельцер Б.Я., Соловьев В.А., Комиссарова Т.А., Ситникова А.А., Кириленко Д.А., Надточий А.М., Попова Т.В., Копьев П.С., Иванов С.В.
Физ. и техн. полупроводников , Vol: 45, No: 10 , published: 15 October 2011
Особенности формирования пленки Fe3 O4 на поверхности   Si(111), покрытой тонким слоем  SiO2
Балашев В.В., Коробцов В.В., Писаренко Т.А., Чеботкевич Л.А.
Ж. техн. физ., Vol: 81, No: 10 , published: 13 October 2011
Reflection high energy electron diffraction as a tool in cluster deposition experiments
Kleibert Armin/Voitkans Andris/Meiwes-Broer Karl-Heinz
Phys. Status Solidi B, Vol: 247, No: 5 , published: 12 November 2010
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy
Loenz Pierre/Haensel Thomas/Gutt Richard/et al.
Phys. Status Solidi B, Vol: 247, No: 7 , published: 12 July 2010
Structural and Optical Properties of Nonpolar AlN(1120) Films Grown on ZnO(1120) Substrates with a Room-Temperature GaN Buffer Layer
Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
Jpn. J. Appl. Phys., Vol: 49, No: 6R , published: 15 June 2010
Changes in the valence band structure of as-grown InN(0001)-2 × 2 surfaces upon exposure to oxygen and water
Eisenhardt Anja/Reiss Stephanie/Himmerlich Marcel/et al.
Phys. Status Solidi A, Vol: 207, No: 5 , published: 06 May 2010
Role of boron and (√3 × √3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study
Andreas Fissel, Jan Krügener, Dominik Schwendt, H. Jörg Osten
Phys. Status Solidi A, Vol: 207, No: 2 , published: 02 February 2010
Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate
Lim J.Y./Song J.D./Choi W.J./Yang H.S.
Phys. Status Solidi A, Vol: 207, No: 2 , published: 02 February 2010
Синтез наноструктурированных пленок SiC при импульсной фотонной оработке Si в углеродсодержащей среде
Иевлев В.М./Ильин В.С./Кущев С.Б./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2009, No: 10 , published: 21 October 2009
Auger Intensity from Si(001)2×2–Al Surface Excited by Wave-Field in Medium-Energy Electron Diffraction
Horio Yoshimi/Sakai Daisuke
Jpn. J. Appl. Phys., Vol: 48, No: 6R , published: 25 June 2009
Epitaxial growth of Al-doped _p-FeSi[2] on Si(111) substrate by reactive deposition epitaxy
Terai Yoshikazu/Hashimoto Syoutaro/Noda Keiichi/Fujiwara Yasufumi
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate
Saito Mitsufumi/Mori Masayuki/Ueda Koji/Maezawa Koichi
Phys. Status Solidi C, Vol: 6, No: 6 , published: 01 April 2009
Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X-ray photoelectron spectroscopy and reflection high energy electron diffraction investigations
Sarrieu C./Barth N./Guise A./et al.
Phys. Status Solidi A, Vol: 206, No: 9 , published: 30 March 2009
Origin of RHEED intensity oscillation during growth studied by using wave functions
Kawamura Takaaki/Maksym Peter A.
J. Phys. Soc. Jpn., Vol: 78, No: 7 , published: 12 February 2009
Морфология поверхности подложки Si(310), используемой для молекулярно-лучевой эпитаксии CdHgTe. II. Поверхность Si(310), отожженная в парах As[4]
Якушев М.В./Брунев Д.В./Романюк К.Н./Сидоров Ю.Г.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2008, No: 6 , published: 30 October 2008
Orientational order parameter in CO[2]-based alloys with rare gases from THEED data: pure CO[2]
Danchuk V.V.\Solodovnik A.A.\Strzhemechny M.A.
Физ. низ. температур, Vol: 33, No: 6-7 , published: 14 April 2008
Морфология поверхности подложки Si(310), используемой для молекулярно-лучевой эпитаксии CdHgTe. I. Чистая поверхность Si(310)
Якушев М.В./Брунев Д.В./Романюк К.Н./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2008, No: 2 , published: 16 February 2008
Субструктура и ориентация тонких пленок твердого раствора медь_-палладий
Иевлев В.М./Белоногов Е.К./Максименко А.А./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2008, No: 2 , published: 16 February 2008
Field emission from surface-modified heavily phosphorus-doped homoepitaxial (111) diamond
Yamada Takatoshi\Nebel Christoph E.\Somu Kumaragurubaran\et al.
Phys. Status Solidi A, Vol: 204, No: 9 , published: 03 February 2008
Модификация структуры и эмиссионные свойства углеродных материалов при высокодозном ионном облучении
Борисов А.М./Виргильев Ю.С./Машкова Е.С.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2008, No: 1 , published: 15 January 2008
Формирование наночастиц ZnS под ленгмюровским монослоем арахидата цинка
Ракова Е.В./Степина Н.Д./Артемов В.В./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 12 , published: 21 December 2007
Ordering and orientation of epitaxial CuInS[2] films grown on GaP(001) by three-source evaporation
Vequizo Reynaldo Magdadaro\Kobayashi Satoshi\Tsuboi Nozomu\et al.
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 2 , published: 10 December 2007
Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy
Byungha Shin and Michael J. Aziz
Phys. Rev. B: Condens. Matter, Vol: 76, No: 16 , published: 08 October 2007
Molecular-beam epitaxial growth and structures of Dy on (100) and (211)Cr thin films
Kamada Yasuhiro\Tanino Hitoshi\Kingetsu Toshiki\Yamamoto Masahiko
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Rate-limiting reactions of grwoth and decomposition kinetics of very thin oxides on Si(001) surfaces studied by reflection high-energy electron diffraction combined with auger electron spectroscopy
Ogawa Shuichi\Takakuwa Yuji
Jpn. J. Appl. Phys., Part 1, Vol: 45, No: 9A , published: 14 September 2007
Reflection high-energy positron diffraction study of surface super-structures
A. Kawasuso, Y. Fukaya, K. Hayashi, M. Hashimoto, A. Ichimiya
Phys. Status Solidi C, Vol: 4, No: 10 , published: 01 September 2007
Examination of the effects of high-density plasmas on the surface of HgCdTe
Stoltz A.J.\Jaime-Vasquez M.\Benson J.D.\et al.
J. Electron. Mater., Vol: 35, No: 6 , published: 29 August 2007
Carbon-Induced Superstructure on Cr(001) Thin-Film Surfaces
Hirofumi Oka, Akira Nakai, and Kazuhisa Sueoka
Jpn. J. Appl. Phys., Part 1, Vol: 46, No: 8B , published: 23 August 2007
Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure
Kikuchi T.\Somintac A.S.\Odawara M.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Novel buffer layer for the growth of GaN on c-sapphire
Lee Wookhyun\Lee Seogwoo\Goto Hiroki\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Two to three dimensional transitions of InGaN and the impact of GaN overgrowth
Yamaguchi T.\Einfeldt S.\Gangopadhyay S.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Radio-frequency MBE growth of cubic GaN on 3C-SiC(001)/Si(001) template
Ohachi T.\Kikuchi T.\Somintac A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Impact of ~I~I~I/~V ratio on polytype and crystalline quality of AlN grown on 4H-SiC (11~-20) substrate by molecular-beam epitaxy
Horita M.\Suda J.\Kimoto T.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
RF-MBE growth of cubic InN films on MgO (001) substrates
Iwahashi Y.\Yaguchi H.\Nishimoto A.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE
Mansurov V.G.\Galitsyn Yu.G.\Nikitin A.Yu.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Growth of ternary and quaternary cubic ~I~I~I-nitrides on 3C-SiC substrates
Sch~:ormann J.\Potthast S.\Schnietz M.\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
AlN/GaN superlattices: strain relaxation
Bellet-Amalric E.\Amstatt B.\Daudin B.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy
Honda Tohru\Sawada Masaru\Kobayashi Toshiaki\et al.
Phys. Status Solidi C, Vol: 3, No: 6 , published: 16 August 2007
Ионно-индуцированное окисление бериллия
Залавутдинов Р.Х.\Алимов В.Х.\Городецкий А.Е.\Захаров А.П.
Изв. РАН. Сер. физ., Vol: 70, No: 8 , published: 14 August 2007
Some aspects to the RHEED behavior of LT-GaAs growth
~1Akos Nemcsics
Физ. и техн. полупроводников , Vol: 39, No: 11 , published: 03 July 2007
Reflection high-energy positron diffraction study on Si(111)-sqrt(3)×sqrt(3)-Ag surface
Y. Fukaya, A. Kawasuso, and A. Ichimiya
Phys. Rev. B: Condens. Matter, Vol: 75, No: 11 , published: 27 March 2007
Температурные зависимости ионно-электронной эмиссии стеклоуглеродов при облучении ионами аргона с энергией 30 кэВ
Андрианова Н.Н./Борисов А.М./Виргильев Ю.С./и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 2007, No: 3 , published: 23 March 2007
К изменению интенсивности дифракции быстрых электронов
Nemcsics ~1A.\Olde J.\Geyer M.\Resh~:oft K.
Приборы и техн. эксперим., Vol: 2005, No: 5 , published: 01 January 2005
RHEED study of the Si(111)√3×√3-B formation process during B[2]O[3] irradiation on the Si(111)7×7 surface
Korobtsov V.V., Shaporenko A.P., Balashev V.V., Lifshits V.G.
Phys. Low-Dim.struct., Vol: 1999, No: 7-8 , published: 01 January 1999
Surface structure transitions and growth mechanisms in the molecular beam epitaxy on InAs and GaAs (001)
Galitsyn Yu.G., Mansurov V.G., Moshchenko S.P., Toropov A.I.
Phys. Low-Dim.struct., Vol: 1999, No: 7-8 , published: 01 January 1999
Истинные атомные структуры на поверхности GaAs (001), выращенной методами молекулярно-лучевой эпитаксии
Бахтизин Р.З., Хашицуье Т., Шуе К.-К., Сакурай Т.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1999, No: 7 , published: 01 January 1999
Epitaxial growth of GaN on LaAlO[3](100) substrate by RF plasma assisted molecular beam epitaxy
Lee Jeoung Ju, Kang Kwang Yong, Park Young Sin et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11 , 1999
Image conservation in inelastically scattered electrons in reflection electron microscopy
Tanishiro Yasumasa, Okamoto Kimiharu, Suzuki Takayuki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11 , 1999
Cleaning of Ge(110) surfaces using an excimer lamp
Ichikawa Toshihiro, Kurokawa Kiyotaka, Cho Kohei, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Growth modes of Nd deposited on Mo(110) surface
Jo Sadaharu, Gotoh Yoshihiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Study of reflection high-energy electron difrraction oscillation for optimization of tertiarybutylphosphine-based molecular beam epitaxial growth of In[0.48]Ga[0.52]P on GaAs
Sai Hironobu, Fujikura Hajime, Hasegawa Hideki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Consideration on the quantitativeness of reflection high energy electron diffraction intensity as a tool to monitor the coverage of the Si(111) surface by 7×7 domains
Shimada Kazuyoshi, Katsube Satoshi, Ishimaru Tetsuya et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2A , 1999
Improvement of the crystalline quality of InN layers grown on sapphire (0001) by surface nitridation
Tsuchiya Tohru, Yamano Hirofumi, Miki Osamu et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4A , 1999
Formation of very thin epitaxial Al[2]O[3] pre-layer with very smooth surface on Si (111) using a protective oxide layer
Jung Young-Chul, Miura Hiroyuki, Ishida Makoto
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Effects of initial surface reconstructionon silicon interface control layer based passivation of (001) GaAs surfaces studied in an ultrahigh-vacuum multichamber system
Mutoh Morimichi, Tsurumi Naohiro, Hasegawa Hideki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Growth of ZnO by molecular beam epitaxy using NO[2] as oxygen source
Sakurai Keiichiro, Iwata Daiji, Fujita Shizuo, Fujita Shigeo
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Initial stage of Ni growth on the Mo(110) surface
Tsunematsu Hiroshi, Gotoh Yoshihiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Study on Zr-Si/W(100) surface at high temperatures by reflection high energy electron diffraction (Short Note)
Kawano Takashi, Mitsuhashi Riichiro, Kimura Yoshihide, Shimizu Ryuichi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Elongated shaped Si Island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation
Ishida Yuuki, Takahashi Tetsuo, Okumura Hajime et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Comparison of thin GaN and AlN layers deposited by plasma assisted molecular beam epitaxy on 6H-SiC
Ferro Gabriel, Okumura Hajime, Yoshida Sadafumi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Solid-state amorphization in Al/Pd multilayer during near-room-temperature molecular-beam deposition
Kingetsu Toshiki, Kamada Yasuhiro, Yamamoto Masahiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Electric properties of zinc oxide epitaxial films grown by ion-beam sputtering with oxygen-radical irradiation
Tsurumi Takaaki, Nishizawa Shuichi, Ohashi Naoki, Ohgaki Takeshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A , 1999
Initial stage of nitridation of GaAs (001): Atomic scale view
Imayoshi Takahiro, Oigawa Haruhiro, Shigekawa Hidemi, Tokumoto Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6B , 1999
Lowering of silicon surface cleaning temperature by irradiating low energy electron beams
Yokota Katsuhiro, Nakamura Kazuhiro, Imai Masashi
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Selective-area growth of magnetic garnet crystals by liquid-phase epitaxy and its application to waveguid devices
Yokoi H., Mizumoto T., Takano T.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Different growth modes of Al on Si(111)7×7 and Si(111)√3×√3-Al surfaces
Horio Y.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Selective-area growth of magnetic garnet crystals by liquid-phase epitaxy and its application to waveguid devices
Yokoi H., Mizumoto T., Takano T.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Different growth modes of Al on Si(111)7×7 and Si(111)√3×√3-Al surfaces
Horio Y.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Artificial SrTiO[3]/SrO superlattices by pulsed laser deposition
Iwazaki Yoshiki, Suzuki Toshimasa, Sekiguchi Shoichi, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Growth dependence of reactively sputtered yttria-stabilized zirconia on Si(100), (110), (111) substrates
Nagashima Mitsuhiro, Nakano Shin-ichi, Sasaki Kimihiro, Hata Tomonobu
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 1A-1B , 1999
Low-temperature growth of InN films on (111)GaAs substrates
Guo Qixin, Nishio Mitsuhiro, Ogawa Hiroshi, Yoshida Akira
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
GaN on Si substrate with AlGaN/AlN intermediate layer
Ishikawa Hiroyasu, Zhao Guang-Yuan, Nakada Naoyuki et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Electron crystallography in surface structure analysis
Leslie C., Landree E., Collazo-Davila C. et al.
Microsc. Res. Tech., Vol: 46, No: 3 , 1999
Structure of Se-adsorbed GaAs(111)A-(2(3){1/2} × 2(3){1/2})-R30° surface
Ohtake Akihiro, Komura Takuji, Hanada Takashi, Miwa Shiro, Yasuda Tetsuji, Arai Kenta, Yao Takafumi
Phys. Rev. B: Condens. Matter, Vol: 59, No: 12 , 1999
Structure and magnetism of pulsed-laser-deposited ultrathin films of Fe on Cu(100)
Jenniches H., Shen J., Mohan Ch. V., Manoharan S. Sundar, Barthel J., Ohresser P., Klaua M., Kirschner J.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 2 , 1999
Epitaxial growth, perpendicular magnetic anisotropy, and domain structure of Co/Pt(311) and (111) multilayers
Huang J. C. A., Wu L. C., Hsu A. C., Hu Y. M., Wu T. H., Lee C. H.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 2 , 1999
Evolution of coherent islands in Si[1 - x]Ge[x]/Si(001)
Floro J. A., Chason E., Freund L. B., Twesten R. D., Hwang R. Q., Lucadamo G. A.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 3 , 1999
Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere
Vitali G., Pizzuto C., Zollo G., Karpuzov D., Kalitzova M., Heide P. van der, Scamarcio G., Spagnolo V., Chiavarone L., Manno D.
Phys. Rev. B: Condens. Matter, Vol: 59, No: 4 , 1999
Correlation of InGaP(001) surface structure during growth and bulk ordering
Zorn M., Kurpas P., Shkrebtii A. I., Junno B., Bhattacharya A., Knorr K., Weyers M., Samuelson L., Zettler J. T., Richter W.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 11 , 1999
Structure and composition of the ZnSe(001) surface during atomic-layer epitaxy
Ohtake Akihiro, Hanada Takashi, Yasuda Tetsuji, Arai Kenta, Yao Takafumi
Phys. Rev. B: Condens. Matter, Vol: 60, No: 11 , 1999
Real-time analysis of adsorption processes of Zn on the GaAs(001)-(2 × 4) surface
Ohtake Akihiro, Yasuda Tetsuji, Hanada Takashi, Yao Takafumi
Phys. Rev. B: Condens. Matter, Vol: 60, No: 12 , 1999
Sb-induced reconstruction on Sb-terminated GaAs(001)
Maeda Fumihiko, Watanabe Yoshio
Phys. Rev. B: Condens. Matter, Vol: 60, No: 15 , 1999
NO[2]-assisted molecular-beam epitaxy of Fe[3]O[4], Fe[3-<]O[4], and γ-Fe[2]O[3] thin films on MgO(100)
Voogt F. C., Fujii T., Smulders P. J. M., Niesen L., James M. A., Hibma T.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 15 , 1999
Morphology and magnetism of ultrathin Fe films on Pd(100)
Jin X. F., Barthel J., Shen J., Manoharan S. S., Kirschner J.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 16 , 1999
Structural phase transitions of Pb-adsorbed Si(111) surfaces at low temperatures
Horikoshi Kotaro, Tong Xiao, Nagao Tadaaki, Hasegawa Shuji
Phys. Rev. B: Condens. Matter, Vol: 60, No: 19 , 1999
Atomic-oxygen-assisted MBE growth of α-Fe[2]O[3] on α-Al[2]O[3](0001): Metastable FeO(111)-like phase at subnanometer thicknesses
Gota Susana, Guiot Eric, Henriot Michele, Gautier-Soyer Martine
Phys. Rev. B: Condens. Matter, Vol: 60, No: 20 , 1999
Metastable and equilibrium structures on Pt[3]Sn(001) studied by STM, RHEED, LEED, and AES
Hoheisel M., Kuntze J., Speller S., Postnikov A., Heiland W., Spolveri I., Bardi U.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 3 , 1999
Sulfur: A donor dopant for n-type diamond semiconductors
Sakaguchi Isao, N.-Gamo Mikka, Kikuchi Yuko, Yasu Eiji, Haneda Hajime, Suzuki Toshimitsu, Ando Toshihiro
Phys. Rev. B: Condens. Matter, Vol: 60, No: 4 , 1999
Reactive deposition epitaxy of CoSi[2] nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
Goldfarb I., Briggs G. A. D.
Phys. Rev. B: Condens. Matter, Vol: 60, No: 7 , 1999
Structure and electrical conductance of Pb-covered Si(111) surfaces
Tong Xiao, Horikoshi Kotaro, Hasegawa Shuji
Phys. Rev. B: Condens. Matter, Vol: 60, No: 8 , 1999
Struvtures and magnetic proeprties of the Fe[x]Mn[1-x] alloys epitaxially grown on GaAs(001) surface
Jing Chao, Wu Yi-zheng, Dong Guo-sheng, Jin Xiao-feng
Acta phys. sin., Vol: 48, No: 2 , 1999
Effect of chloride anions on Cu electrodeposition onto Pt(110) and Pd(110) surfaces
Zei M.S.
Z. phys. Chem., Vol: 208, No: 1-2 , 1999
Связь формы ДБЭ-осцилляций с преобразованием поверхностного рельефа в процессе молекулярно-лучевой эпитаксии
Неизвестный И.Г., Шварц Н.Л., Яновицкая З.Ш.
Изв. РАН. Сер. физ., Vol: 63, No: 2 , 1999
Особенности роста кремния на Si (100) в атмосфере мышьяка при молекулярно-пучковой эпитаксии
Цырлин Г.Э., Петров В.Н., Поляков Н.К. и др.
Физ. и техн. полупроводников , Vol: 33, No: 10 , 1999
Indium phases on a (111)A InAs surface
Galitsyn Yu.G., Mansurov V.G., Moshchenko S.P.
Phys. Low-Dim.struct., Vol: 1998, No: 11-12 , published: 01 January 1998
Совершенные пленки фианита (ZrO[2]+Y[2]O[3]) на кремнии (100)
Бешенков В.Г., Знаменский А.Г., Марченко В.А.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 1 , published: 01 January 1998
Совершенные пленки фианита (ZrO[2]+Y[2]O[3]) на кремнии (100)
Бешенков В.Г., Знаменский А.Г., Марченко В.А.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 1 , published: 01 January 1998
Адсорбционные фазы In на (111)A InAs
Галицын Ю.Г., Мансуров В.Г., Мараховка И.И., Петренко И.П.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 11 , published: 01 January 1998
Структура и состав пленок кубического карбида кремния, полученных методом химических транспортных реакций с использованием твердофазного свободного кремния и углерода
Атажанов Ш.Р., Костишко Б.М., Комов А.Н., Чепурнов В.И.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 11 , published: 01 January 1998
Плоскостное каналирование быстрых электронов и систематические Брэгговские отражения в дифракции от граней InAs
Галицын Ю.Г., Мансуров В.Г., Мараховка И.И.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: 1998, No: 3 , published: 01 January 1998
A two-dimensional Bloch-wave method for dynamical RHEED calculations
Watanabe K., Hara S., Horio Y., Hashimoto I.
Acta crystallogr. A, Vol: 54, No: 4 , 1998
Ultrafast electron diffraction: determination of radical structure with picosecond time resolution
Cao J., Ihee H., Zewail A.H.
Chem. Phys. Lett., Vol: 290, No: 1-3 , 1998
Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations
Kang H.-B., Nakamura K., Lim S.-H., Shido D.
J. Phys. A, Vol: 31, No: 17 , 1998
Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations
Kang H.-B., Nakamura K., Lim S.-H., Shido D.
J. Phys. A, Vol: 31, No: 17 , 1998
Evaluation of free energy on Si(110) surface (Short Note)
Yamamoto Youiti
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10 , 1998
Epitaxial growth of ferroelectric YMnO[3] thin films on Si (111) substrates by molecular beam epitaxy
Imada Shogo, Shouriki Shigeto, Tokumitsu Eisuke, Ishiwara Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12A , 1998
Study of the Si(111) "1 x 1"-Au surface using reflection high-energy electron diffraction and scanning tunneling microscopy
Khramtsova Elena A., Sakai Hiroto, Hayashi Kazuhiko, Ichimiya Ayahiko
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12A , 1998
Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy
Lee Chae-Deok, Park Chanro, Lee Hwack Joo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 12B , 1998
Electron microscopy study of surfactant-mediated solid phase epitaxy of Ge on Si(111)
Aizawa N., Homma Y., Tomita M.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Epitaxial growth of Ti[1-x]Al[x]N buffer layer for a ferroelectric (Ba,Sr)TiO[3] capacitor on Si substrate
Yanase N., Sano K., Abe K. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 2A , 1998
Behaviors of Auger intensities emitted from a Si(111)√3×√3-Al surface during incident beam rocking of reflection high-energy electron diffraction
Horio Y.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 2A , 1998
Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source
Saito T., Kameta M., Kusakabe K., Morooka S., Maeda H., Hayashi Y., Asano T.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Structural dependence of GaN/Al[2]O[3] on electric bias during electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE)
Shimizu Y., Tominari T., Hokuto Sh. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6B , 1998
Terminating structure of plasma-assisted molecular beam epitaxial GaN{0001} film surface identified by coaxial impact collision ion scattering spectroscopy
Shimizu S., Suzuki Y., Nishihara T. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6B , 1998
Metastable ordering of domain walls into Si(111)(2√21×2√21)R(±10.9°)-Au structure studied by reflection high energy electron diffraction and scanning tunneling microscopy
Sakai H., Khramtsova E.A., Ichimiya A.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6B , 1998
Epitaxial growth of ZnSe on Si(111) with lattice-matched layered InSe buffer layers
Loher Th., Koma A.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A-9B , 1998
Scanning tunneling microscopy study of Fe submonolayer film on vicinal Au(001)
Kawagoe T., Sogabe K., Kondoh N., Narusawa R., Itoh A.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6Bl , 1998
Real-space dynamical calculation of diffuse RHEED intensities from disorded surfaces
Meyer-Ehmsen G.
Surf. Sci., Vol: 395, No: 1 , 1998
Влияние послеростового отжига на состав и структуру пленок Si/CoSi[2](100)
Умирзаков Б.Е., Усманов М., Ташмухамедова Д.А., Ташатов А.К.
Изв. РАН. Сер. физ., Vol: 62, No: 10 , 1998
Переходные слои в пленках Ленгмюра-Блоджетт
Карагеоргиев П.П., Карагеоргиев В.В., Лучинин В.В., Казак-Казакевич А.З.
Кристаллография, Vol: 43, No: 6 , 1998
Дифракция быстрых электронов в кристалле с дефектами при частично когерентном освещении
Боргардт Н.И.
Кристаллография, Vol: 43, No: 6 , 1998
InAs self-organized quantum dashes grown on GaAs (211)B
Guo S.P., Ohno H., Shen A., Matsukura F., Ohno Y.
Appl. Phys. Lett. , Vol: 70, No: 20 , 1997
Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy
Liu Q.Z., Shen L., Smith K.V., Tu C.W., Yu E.T., Lau S.S., Perkins N.R., Kuech T.F.
Appl. Phys. Lett. , Vol: 70, No: 8 , 1997
Structural analysis of cubic GaN through X-ray pole figure generation
Balakrishnan K., Feuillet G., Ohta K., Hamaguchi H., Okumura H., Yoshida S.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 10 , 1997
Surface superstructures of Ce thin films on an Mo(100) surface
Kamei M., Mizoguchi Y., Gotoh Y.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 2 , 1997
Dominant electron trap with metastable state in molecular beam epitaxial GaAs grown at low temperatures
Hashizume T., Shiobara Sh., Hasegawa H.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 3B , 1997
Atomic-layer surface reaction of SiH[4] on Ge(100)
Watanabe T., Sakuraba M., Matsuura T., Murota J.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 6B , 1997
Defect-controlled selective epitaxial growth of GaP on Si by migration-enhanced epitaxy under atomic hydrogen irradiation
Tsuji T., Yonezu H., Yokozeki M., Takagi Y., Fujimoto Y., Ohshima N.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 9A , 1997
Antase-type thin films produced by lattice deformation
Sugimura W., Yamazaki A., Shigetani H., Tanaka J., Mitsuhashi T.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 12A , 1997
Lattice matching and relaxation of vanadyl-phthalocyanine crystal epitaxially gwown on mixed crystals of alkali halides
Nakao S., Gomyou M., Hoshi H., Ishikawa K., Takezoe H.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 5B , 1997
Structural study of the Si(111)(3{1/2]⊗3{1/2})R30{0}-Au surface using one-beam relection high energy electron-diffraction intensity rocking curve analysis
Khramtsova E.A., Ichimiya A.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 7B , 1997
Incorporation kinetics of As[2] and As[4] on GaAs(110)
Tok E.S., Heave J.H., Allegretti F.E., Zhang J., Jones T.S., Joyce B.A.
Surf. Sci., Vol: 371, No: 2-3 , 1997
Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited
Tok E.S., Neave J.H., Zhang J., Joyce B.A., Jones T.S.
Surf. Sci., Vol: 374, No: 1-3 , 1997
Atomic configurations during Si incorporation on GaAs(001) in As atmosphere evidenced by reflectance difference spectroscopy
Daweritz L., Schutzendube P., Reiche M., Plood K.H.
Surf. Sci., Vol: 385, No: 1 , 1997
Incommensurate growth and interface stability in MgO/SrTiO[3](001)
Chern G.
Surf. Sci., Vol: 387, No: 1-3 , 1997
RHEED structure analysis of the oscillatory catalytic CO oxidation at Pt(110) surfaces
Tappe W., Korte U., Meyer-Ehmsen G.
Surf. Sci., Vol: 388, No: 1-3 , 1997
RHEED intensity oscillations observed during the growth of YSi[2-x] on Si(111) substrates
Daniluk A., Mazurek P., Paprocki K., Mikolajczak P.
Surf. Sci., Vol: 391, No: 1-3 , 1997
Исследование перехода от двумерного к трехмерному росту в системе InAs/GaAs с помощью дифракции быстрых электронов на отражение
Цырлин Г.Э., Корнеева Н.П., Демидов В.Н., Поляков Н.К., Петров В.Н., Леденцев Н.Н.
Физ. и техн. полупроводников , Vol: 31, No: 10 , 1997
Система регистрации и анализа картин дифракции быстрых электронов на отражение
Гурьянов Г.М., Демидов В.Н., Корнеева Н.П., Цырлин Г.Э.
Приборы и техн. эксперим., Vol: 1996, No: 3 , published: 01 January 1996
Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy
Bertru N., Brandt O., Wassermeier M. et al.
Appl. Phys. Lett. , Vol: 68, No: 1 , 1996
Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
Yang H., Brandt O., Wassermeier M. et al.
Appl. Phys. Lett. , Vol: 68, No: 2 , 1996
Real-time investigation of In surface segregation in chemical beam epitaxy of In[0.5]Ga[0.5]P on GaAs (001)
Mesrine M., Massies J., Deparis C., Grandjean N., Vanelle E.
Appl. Phys. Lett. , Vol: 68, No: 25 , 1996
Inhibition of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy
Yamaguchi H., Fahy M.R., Joyce B.A.
Appl. Phys. Lett. , Vol: 69, No: 6 , 1996
Epitaxially grown YMnO[3] film: New candidate for nonvolatile memory devices
Fujimura N., Ishida T., Yoshimura T., Ito T.
Appl. Phys. Lett. , Vol: 69, No: 7 , 1996
In-situ cleaning of SiO[2]-patterned GaAs surface with trisdimethylaminoarsine for selective regrowth
Ortion J.M., Cordier Y., Garcia J.C., Adam D., Grattepain C.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 12A , 1996
Inheritance of crystal structure in Cu/Co and Co/Cu bilayers grown on MgO(100) substrate
Yamamoto M., Hayasaki H., Nishikawa K., Kingetsu T.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 2A , 1996
Surface reconstruction of GaP (001) for various surface stoichiometries
Yoshikawa Masahiro, Nakamura Atsushi, Nomura Takashi, Ishikawa Kenji
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 2B , 1996
Zero-loss reflection high-energy diffraction patterns and rocking curves of the Si(111)7×7 surface obtained by energy filtering
Horio Y.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 6A , 1996
Low-temperature epitaxial growth of CeO[2](110)/Si(100) structure by evaporation under substrate bias
Inoue T., Yamamoto Y., Satoh M.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 12B , 1996
Surface effects of atomic hydrogen on low-temperature growth of InAs on InP
Chun Y.-J., Okada Y., Kawabe M.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 12B , 1996
Adsorption site determination by reflection high-energy electron diffraction combined with interface energy calculation
Kamei M., Tanaka Y., Gotoh Y.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 2A , 1996
Stability of Si(111)√3×√3R30°-B surface in air
Mori Ryosuke, Kumagai Yoshinao, Tanaka Masaya, Yamamoto Masaki, Hasegawa Fumio
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 4B , 1996
4-Monolayer-height layer-by-layer growth and increase of the critical thickness of Ge heteroepitaxy on boron-preadsorbed Si(111) surface
Kumagai Yoshinao, Ishimoto Kouichi, Mori Ryosuke, Tee Keh-Ming, Ishibashi Takayuki, Kawabe Mitsuo, Hasegawa Fumio
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 4B , 1996
Growth of SrCuO[2] thin films on oxygen-annealed SrTiO[3] (100) substrates
Kawayama I., Kanai M., Kawai T.
Jpn. J. Appl. Phys., Part 1, Vol: 35, No: 7B , 1996
H-plasma-annealed and homoepitaxially grown diamond (001) surface structure studied with reflection high-energy electron diffraction
Lee N., Badzian A.
Phys. Rev. B: Condens. Matter, Vol: 53, No: 4 , 1996
Surface kinetics of zinc0blende (001) GaN
Brandt O., Yang H., Ploog K.H.
Phys. Rev. B: Condens. Matter, Vol: 54, No: 7 , 1996
Reversibility of the elementary mechanisms of atomic-layer epitaxy and sublimation of (001) CdTe
Veron M.B., Arnoult A., Daudin B., Tatarenko S.
Phys. Rev. B: Condens. Matter, Vol: 54, No: 8 , 1996
Epitaxial growth of omega-totanium on the (111) surface of alpha-iron
Cheng Y.-T., Meng W.-J.
J. Electron. Mater., Vol: 76, No: 21 , 1996
Stranski-Krastanov growth of CuCl on MgO(001)
Yanase Akihisa, Segawa Yusaburo
Surf. Sci., Vol: 367, No: 1 , 1996
Bloch-wave degeneracies and nonsystematic critical voltage: A method for structure-factor determination. Erratum
Matsuhata H., Gionnes J.
Acta crystallogr. A, Vol: 51, No: 4 , 1995
Investigation of a new method to control thin-film growth
Mitura Z., Mazurek P., Paprocki K., Mikolajczak P.
Appl. Phys. A , Vol: 60, No: 2 , 1995
Investigation of the epitaxial growth of In[x]Ga[1-x]As on GaAs(001) and extension of two-dimensional-three-dimensional growth mode transition
Li W., Wang Zh., Liang J., Liao Q., Xu B., Zhu Zh., Yang B.
Appl. Phys. Lett. , Vol: 66, No: 9 , 1995
Stoichiometry control of atomic beam fluxes by precipitated impurity phase detection in growth of (Pr,Ce)[2]CuO[4] films
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Homoepitaxial growth of SrTiO[3] in an ultrahigh vacuum with automatic feeding of oxygen from the substrate at temperatures as low as 370°C
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Energy-filtered reflection high-energy electron diffraction appartus combined with energy-loss meausrement system
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Indium roles on the GaN surface studied directly by reflection high-energy electron diffraction observations
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Phys. Rev. B: Condens. Matter, Vol: 65, No: 19
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Phys. Rev. B: Condens. Matter, Vol: 65, No: 20
Structure analysis of the Ga-stabilized GaAs(001)-c(8×2) surface at high temperatures
Ohtake Akihiro, Tsukamoto Shiro, Pristovsek Markus, Koguchi Nobuyuki, Ozeki Masashi
Phys. Rev. B: Condens. Matter, Vol: 65, No: 23
Three-dimensional Si islands on Si(001) surfaces
Shklyaev Alexander A., Ichikawa Masakazu
Phys. Rev. B: Condens. Matter, Vol: 65, No: 4
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Yamanaka Toshiro, Ino Shozo
Phys. Rev. B: Condens. Matter, Vol: 66, No: 15
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Phys. Rev. B: Condens. Matter, Vol: 66, No: 20
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Phys. Rev. B: Condens. Matter, Vol: 66, No: 8
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Scanning tunneling spectroscopy of c(2×2) reconstructed Fe thin-film surfaces
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Surface structure of anatase TiO[2](001): Reconstruction, atomic steps, and domains
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Phys. Rev. B: Condens. Matter, Vol: 64, No: 11
Reflection high-energy electron diffraction from carbon nanotubes
Drotar Jason T., Wei B. Q., Zhao Y.-P., Ramanath G., Ajayan P. M., Lu T.-M., Wang G.-C.
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Magnetism of step-decorated Fe on Pd(110)
Li Dongqi, Cuenya B. Roldan, Pearson J., Bader S. D., Keune W.
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Heyn Ch.
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Phys. Rev. B: Condens. Matter, Vol: 64, No: 4
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Time-resolved structural study of low-index surfaces of germanium near its bulk melting temperature
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Electron Spin Resonance Observation of the Si(111)-(7×7) Surface and Its Oxidation Process
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Preparation and magnetic proeprties of EuO thin films epitaxially grown on MgO and SrTiO[3] substrates
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In-situ annealing of thin SrO films grown on Si(001)-2×1 by molecular beam epitaxy
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Molecular beam epitaxial growth of CdTe layers on InSb(111)A and B polar substrates
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Room-temperature heteroepitaxial growth of NiO thin films using pulsed laser deposition
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Fabrication and characterization of novel oxide-free InP metal-insulator-semiconductor FETs having an ultra narrow Si surface quantum well
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Accumualtion effect of bombarding N[2]{+} ions in Al for crystal growth of AlN film
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Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)
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X-ray photoelectron spectroscopy study of hetero-interface between manganese pnictide and Mn-Zn ferrite
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Estimation epitaxial temperature using X-ray diffraction for Sifilms grown on (100) Si by molecular beam epitaxy
Nakamura Kazuhiro, Shimizu Hirofumi, Kodera Jun, Yokota Katsuhiro
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 7B
Epitaxial growth of single-crystal ultrathin films of bismuth on ыш(111)
Nagao Tadaaki, Doi Takumi, Sekiguchi Takeharu, Hasegawa Shuji
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 7B
Material design of half-metallic zinc-blende CrAs and the synthesis by molecular-beam epitaxy
Akinaga Hiro, Manago Takashi, Shirai Masafumi
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 11B
Epitaxial growth of pure {30}Si layers on a natural Si(100) substrate using enriched {30}SiH[4]
Nakabayashi Yukio, Segawa Toru, Osman Hirman I. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 11B
Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS film on Si(111) substrate
Miyake Aki, Kominami Hiroko, Tatsuoka Hirokazu et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 11B
Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As
Haneda Shigeru, Yamaura Masaaki, Takatani Yukihiro, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 1A-1B
Molecular-beam epitaxial growth of short-period (001) Al/Ag/Cr superlattices with intermediary Ag layers
Kingetsu Toshiki, Kamada Yasuhiro, Yamamoto Masahiko
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 1A-1B
Fabrication of GaAs quantum dots by modified droplet epitaxy
Watanabe Katsuyuki, Koguchi Nobuyuki, Gotoh Yoshihiko
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 2A
Damage-free and hydrogen-free nitridation of silicon substrate by nitrogen radical source
Fujisaki Yoshihisa, Ishiwara Hiroshi
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 11A
Ultrahigh B doping (≤10{22} cm{-3}) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport
Glass G., Kim H., Desjardins P., Taylor N., Spila T., Lu Q., Greene J. E.
Phys. Rev. B: Condens. Matter, Vol: 61, No: 11
Dynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7×7 surface
Fukaya Y., Shigeta Y., Maki K.
Phys. Rev. B: Condens. Matter, Vol: 61, No: 19
Electronic structure and chemical reactivity of oxide-metal interfaces: MgO(100)/Ag(100)
Altieri S., Tjeng L. H., Sawatzky G. A.
Phys. Rev. B: Condens. Matter, Vol: 61, No: 24
Silicon-induced nanostructure evolution of the GaAs(001) surface
Wang Z. M., Daweritz L., Schutzendube P., Ploog K. H.
Phys. Rev. B: Condens. Matter, Vol: 61, No: 4
Correlation effects in the ground-state charge density of Mott insulating NiO: A comparison of ab initio calculations and high-energy electron diffraction measurements
Dudarev S. L., Peng L.-M., Savrasov S. Y., Zuo J.-M.
Phys. Rev. B: Condens. Matter, Vol: 61, No: 4
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Zheng L. X., Xie M. H., Tong S. Y.
Phys. Rev. B: Condens. Matter, Vol: 61, No: 7
Relevance of surface reconstruction to specular RHEED intensity on GaAs(001)
Itoh Makoto, Ohno Takahisa
Phys. Rev. B: Condens. Matter, Vol: 62, No: 11
Influence of chemisorbed oxygen on the growth of europium phases on V(110)
Gourieux T., Frechard S., Dulot F., Eugene J., Kierren B., Malterre D.
Phys. Rev. B: Condens. Matter, Vol: 62, No: 11
Angle-resolved ultraviolet photoemission investigation of the electronic structure of ferromagnetic MnPt[3]
Borgschulte A., Niebur F. J., Menzel D., Schoenes J.
Phys. Rev. B: Condens. Matter, Vol: 62, No: 12
Investigation of epitaxial arrangement and electronic structure of a La@C[82] film grown on an MoS[2] surface
Iizumi K., Uchino Y., Ueno K., Koma A., Saiki K., Inada Y., Nagai K., Iwasa Y., Mitani T.
Phys. Rev. B: Condens. Matter, Vol: 62, No: 12
Erratum: Relation between surface reconstruction and RHEED intensity oscillations [Phys. Rev. B 58, 6716 (1998)]
Itoh Makoto
Phys. Rev. B: Condens. Matter, Vol: 62, No: 19
High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO[2] coverage
Shklyaev Alexander A., Shibata Motoshi, Ichikawa Masakazu
Phys. Rev. B: Condens. Matter, Vol: 62, No: 3
In-induced surface reconstruction on GaSb(001)
Maeda Fumihiko, Sugiyama Munehiro, Watanabe Yoshio
Phys. Rev. B: Condens. Matter, Vol: 62, No: 3
Charge transfer from Cu in Cu[2]O epitaxially grown on MgO(001) by dc-reactive magnetron sputtering
Ogawa Koji, Itoh Takahiro, Maki Kunisuke
Phys. Rev. B: Condens. Matter, Vol: 62, No: 7
Комплекс для регистрации и компьютерной обработки картин дифракции быстрых электронов на отражение
Петров В.Н., Демидов В.Н., Корнеева Н.П. и др.
Ж. техн. физ., Vol: 70, No: 5
Наноструктурированный твердый раствор InSiAs, полученный на поверхности Si(001) методом молекулярно-пучковой эпитаксии
Цырлин Г.Э., Самсоненко Ю.Б., Петров В.Н. и др.
Письма в ЖТФ, Vol: 26, No: 17
Осцилляции зеркального и дробных рефлексов в дифракции быстрых электронов на отражение при гомоэпитаксии на GaAs(001) с реконструкцией (2×4)
Галицын Ю.Г., Мощенко С.П., Торопов А.И., Бакаров А.К.
Письма в ЖТФ, Vol: 26, No: 7
Атомные структуры на поверхности (0001) нитрида галлия
Бахтизин Р.З., Шуе К.-К., Шуе Ч.-Ж. и др.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: , No: 11
Исследование методом дифракции электронов высокой энергии температурной зависимости адсорбции бора при осаждении B[2]O[3] на Si(111)
Коробцов В.В., Лифшиц В.Г., Шапоренко А.П., Балашев В.В.
Поверхность. Рентген., синхротрон. и нейтрон. исслед., Vol: , No: 8
RHEED and TEAS characterization of thin-film growth
Ferron J.
J. Phys.: Condens. Matter. , Vol: 33A, No: Suppl