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   Laser physics.
      Laser applications: Physical bases.
         Laser technology.
            Laser diagnostics of technological processes.
Методы контроля качества дифракционных оптических элементов
Бурганский А.А., Вишняков Г.Н., Левин Г.Г., Русанов Е.В.
Измерит. техн., Vol: 1999, No: 4 , published: 01 January 1999
Определение функции спектральной плотности шероховатости оптической поверхности
Тупанов Л.В., Черемискин Л.В., Чехлова Т.К.
Приборы и техн. эксперим., Vol: 1999, No: 2 , published: 01 January 1999
Исключение влияния флуктуаций температуры при лазерной рефрактометрии в капиллярном электрофорезе
Касютич В.Л.
Приборы и техн. эксперим., Vol: 1999, No: 3 , published: 01 January 1999
Лазерный газоанализатор для поиска утечек газа из подземных газопроводов
Бубличенко И.А., Мохноножкин Б.Е.
Приборы и техн. эксперим., Vol: 1999, No: 5 , published: 01 January 1999
Density matrix and rate equation analyses for picosecond pump/probe combustion diagnostics
Settersten T., Linne M., Gord J., Fiechtner G.
AIAA Journal, Vol: 37, No: 6 , 1999
Diode-laser sensors for real-time control of pulsed combustion systems
Furlong E.R., Mihalcea R.M., Webber M.E., Baer D.S., Hanson R.K.
AIAA Journal, Vol: 37, No: 6 , 1999
Soot measurements in a simulated engine exhaust using laser-induced incandescence
Wainner R.T., Seitzman J.M., Martin S.R.
AIAA Journal, Vol: 37, No: 6 , 1999
Holography as a technique for the study of photopolymerization kinetics in dry polymeric films with a nonlinear response
Blaya Salvador, Carretero Luis, Mallavia Ricardo et al.
Appl. Opt., Vol: 38, No: 6 , 1999
Study of laser conditioning of optical coatings with small laser spot scanning
Qiang Zhao et al.
Acta opt. sin=Guangxue xuebao , Vol: 19, No: 8 , 1999
Photoluminescence evaluation of pseudomorphic high electron mobility transistor device wafers
Martin P.A., Ballingall J.M., Ho P., et al.
J. Electron. Mater., Vol: 23, No: 12 , 1999
Junction depth measurement in HgCdTe using laser beam induced current (LBIC)
Musca C.A., Redfern D.A., Smith E.P.G. et al.
J. Electron. Mater., Vol: 28, No: 6 , 1999
Insights into MOCVD process control as revealed by laser interferometry
Stafford A., Irvine S.J.C., Hess K.L., Bajaj J.
J. Electron. Mater., Vol: 28, No: 6 , 1999
Effect of gas feeding methods on optical propertis of GaN grown by rapid thermal chemical vapor deposition reactor
Kim Sun-Jung, Seo Young Hun, Nahm Kee Suk et al.
J. Electron. Mater., Vol: 28, No: 8 , 1999
Effects of V/III ratio on the properties of In[1-x]Ga[x]P/GaAs grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy
Yoon Soon Fatt, Mah Kia Woon, Zheng Hai Qun
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 10 , 1999
Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be
Ichiryu Dai, Sano Eriko, Horikoshi Yoshiji
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12A , 1999
Detection of metastable chlorine ions in time-modulated plasma by time resolved laser-induced fluorescence
Kumagai Shinya, Sasaki Minoru, Koyanagi Mitsumasa, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 12B , 1999
Partial pressure of phosphorus and arsenic vapor measured by raman scattering
Roth Katrin, Kortus Jens, Herms Martin et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 2B , 1999
Lateral composition modulation induced optical anisotropy in InP/GaInP quantum dot system
Ren Hong-Wen, Sugisaki Misturu, Sugou Shigeo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Growth condition dependence of the photoluminescence properties of In[x]Ga[1-x]N/In[y]Ga[1-y]N multiple quantum wells grown by MOCVD
Harris Janet C., Brisset Helene, Someya Takao, Arakawa Yasuhiko
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
In-situ monitoring of In[0.53]Al[0.13]Ga[0.34]As/In[0.52]Al[0.48]As 1.55 μm vertical cavity surface emitting laser structure grown by metal organic chemical vapor deposition
Baek Jong-Hyeob, Lee Bun, Han Won Seok et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5A , 1999
Transmission electron microscopy and photoluminescence characterization of InAs quantum wires on vicinal GaAS(110) substrates by molecular beam epitaxy
Torii S., Bando K., Shim B.-R., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CN[x] thin films deposited by nitrogen-ion-assisted pulsed laser deposition
Ren Z.M., Lu Y.F., Ho D.H.K., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Transmission electron microscopy and photoluminescence characterization of InAs quantum wires on vicinal GaAS(110) substrates by molecular beam epitaxy
Torii S., Bando K., Shim B.-R., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CN[x] thin films deposited by nitrogen-ion-assisted pulsed laser deposition
Ren Z.M., Lu Y.F., Ho D.H.K., et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 8 , 1999
Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga+In) source
Chu Shucheng, Saisho Tetsuhiro, Fujimura Kazuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
Synthesis and properties of semiconducting iron disilicide β-FeSi[2]
Kakemoto Hirofumi, Makita Yunosuke, Sakuragi Shiro, Tsukamoto Takeyo
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9A , 1999
Measurement of piezoelectric displacements of Pb(Zr,Ti)O[3] thin films using a double-beam interferoemter
Maiwa Hiroshi, Christman James A., Kim Seung-Hyun et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 9B , 1999
Micro-scale characterization of crystalline phase and stress in laser-crystallized poly-Si thin films by Raman spectroscopy
Kitahara Kuninori, Moritani Akihiro, Hara Akito, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11B , 1999
Sample preparation and photoluminescence of ZnO particles embedded in thin alkali halide crystals
Harada Yoshiyuki, Kondo Hisao, Ichimura Nobuko, et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 11B , 1999
Self-assembling molecular beam epitaxial growth of the InAs quantum dots embedded in deep Al[0.5]Ga[0.5]As barriers
Koike Kazuto, Ohkawa Hiroyuki, Yano Mitsuaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
High-quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source
Chu Shucheng, Saisho Tetsuhiro, Fujimura Kazuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 4B , 1999
Enhanced crystallinity at initial growth stage of microcrystalline silicon on corning #7059 glass using SiH[2]Cl[2]
Fukai Chisato, Moriya Yoshimizu, Nakamura Takuya, Shirai Hajime
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 5B , 1999
Real-time observation of ellipsometry oscillation during GaAs layer by layer growth by metalorganic vapor-phase epitaxy
Lee Jeong-Sik, Sugou Shigeo, Masumoto Yasuaki
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A-6B , 1999
Improvement of 1.5 μm photoluminescence from reactive deposition epitaxy (RDE) grown β-FeSi[2] ball sin Si by high temperature annealing
Suemasu Takashi, Iikura Yusuke, Fujii Tetsuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 6A-6B , 1999
Highly conducting undoped μc-SiO:H films prepared by RF glow discharge
Das Debajyoti, Barua Asok K.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Straight quantum wires self-formed by growing GaP/InP short-period superlattices on GaAs(011) substrate
Kim Seong-Jin, Asahi Hajime, Asami Kumiko et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7A , 1999
Photoluminescence studies of hydrogen-passivated Al[0.13]Ga[0.87]As grown on Si substrate by metalorganic chemical vapor deposition
Wang Gang, Ogawa Takashi, Ohtsuka Kiyosi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 38, No: 7B , 1999
Optical studyof germanium nanostructures grown on a Si(118) vicinal substrate
Bremond G., Serpentini J., Souifi A. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
Sanchez J.J., Tijero J.M.G., Hernando J. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (11)B GaAs substrates
Tsai F.Y., Lee C.P., Shen J. et al.
Microelectron. J., Vol: 30, No: 4-5 , 1999
Nondestructive cross evaluations of iron-based material by magnetic sensors and by laser speckle interferometry
Yamada K., Shoji S., Tanaka Y. et al.
Nihon oyo jiki gakkaishi = J. Magn. Soc. Jap., Vol: 23, No: 1-2 , 1999
Application of a new light scatering technique to avoid the influence of dilution in light scattering experiments with milk
Urban Claus, Schurtenberger Peter
Phys. Chem. Chem. Phys., Vol: 1, No: 17 , 1999
Resonance enhanced multiphoton ionisation probing of H atoms in a hot filament chemical vapour deposition reactor
Redman Stephen A., Chung Charissa, Rosser Keith N., Ashfold Michael N.R.
Phys. Chem. Chem. Phys., Vol: 1, No: 7 , 1999
Characterization of electrodeposited thin film of cadmium on molybdenum using optical second harmonic generation
Lovell M.A., Walters M.J., Roy D.
Phys. Chem. Chem. Phys., Vol: 1, No: 8 , 1999
Micro-Raman analysis of the cross section for diamond film prepared by chemical vapor deposition
Wang Guan-zhong, Ye Feng, Chang Chao, et al.
Acta phys. sin., Vol: 48, No: 12 , 1999
Study on α-Al[2]O[3] phase doped with tungsten impurity in ceramics of Al[2]O[3]-WO[3] system synthesized by a high power CO[2] laser. I. The situation of tungsten ions in α-Al[2]O[3] lattice
Fang Zheng, Runzhang Yuan, Zhaiguang Li et al.
Chin. J. Lasers=Zhongguo jiguang, Vol: 26, No: 11 , 1999
Interference measurement for roughness of laser mirrors
Yaoning Zhang, Zuhai Cheng
Chin. J. Lasers=Zhongguo jiguang, Vol: 26, No: 2 , 1999
Study of the technology of small spot scanning for laser conditioning of optical coatings at 532 nm
Haiyang Hu, Ruiying Fan, Zhaosherg Tang et al.
Chin. J. Lasers=Zhongguo jiguang, Vol: 26, No: 8 , 1999
Количественный безэталонный экспресс-анализ некоторых сплавов на лазерном времяпролетном масс-спектрометре
Манагадзе Г.Г., Манагадзе Н.Г.
Ж. техн. физ., Vol: 69, No: 10 , 1999
Исследование монокристаллов арсенида галлия различной кристаллографической ориентации, имплантированных ионами кремния и подвергнутых импульсному фотонному отжигу
Васльковский С.В., Духновский М.П., Конакова Р.В., Тхорик Ю.А.
Ж. техн. физ., Vol: 69, No: 5 , 1999
Нелинейные энергоселективные наномасштабные модификации материалов и динамика в металлах и полупроводниках
Марка З., Паркс Чейни К., Ванг В. и др.
Ж. техн. физ., Vol: 69, No: 9 , 1999
Лазерная диагностика гранулометрического состава дисперсной фазы плазмы горения пиротехнических составов
Тихомиров И.А., Цимбал В.Н., Мышкин В.Ф., Хан В.А., Кемельбеков Б.Ж.
Завод. лаб.: Диагност. матер., Vol: 65, No: 4 , 1999
Лазерный метод определения оптических и теплофизических характеристик алмаза при высоких температурах
Царькова О.Г., Гарнов С.В., Конов В.И. и др.
Квант. электрон., Vol: 27, No: 3 , 1999
Оптическая неоднородность тонких слоев In[2]S[3], полученных термообработкой InP в парах серы
Сысоев Б.И., Линник В.Д., Титов С.А.
Неорган. матер., Vol: 35, No: 5 , 1999
Оптмизиация светомодуляционных характеристик ячейки капсулированного полимером сегнетоэлектрического жидкого кристалла
Зырянов В.Я., Сморгон С.Л., Шабанов А.В. и др.
Оптический журнал, Vol: 66, No: 6 , 1999
Разработка оптических методов и аппаратуры для контроля технологии и параметров полупроводниковых структур нано- и микроэлектроники
Ковалев В.И., Руковишников А.И., Перов П.И. и др.
Радиотехн. и электрон. (Россия), Vol: 44, No: 11 , 1999
Фотолюминесценция пленок Si[3]N[4], имплантированных ионами Ge и Ar{+}
Тысченко И.Е., Володин В.А., Реболе Л. и др.
Физ. и техн. полупроводников , Vol: 33, No: 5 , 1999
Формирование двумерных наноостровков при осаждении сверхтонких слоев InSb на поверхность GaSb
Цацульников А.Ф., Бедарев Д.А., Воловик Б.В. и др.
Физ. и техн. полупроводников , Vol: 33, No: 8 , 1999
Применение сверхбыстрого (10{2}-10{3} °C/c) охлаждения раствора-расплава в жидкофазной эпитаксии полупроводников
Абрамов А.В., Дерягин Н.Г., Третьяков Д.Н.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Оптоэлектронные образы поликристаллических тонкопленочных солнечных элементов на основе CuInSe[2] и CuInGaSe[2], полученные лазерным сканированием
Медведкин Г.А., Стольт Л., Веннерберг Й.
Физ. и техн. полупроводников , Vol: 33, No: 9 , 1999
Исследование испарения алюминия методом лазерной резонансной фотоионизации атомов
Тухлибаев О.
Физ. мет. и металловед., Vol: 88, No: 3 , 1999
Выявление оптической анизотропии в пленках металлфталоцианинов методом нулевой эллипсометрии
Аюпов Б.М., Прохорова С.А.
Автометрия, Vol: 1998, No: 2 , published: 01 January 1998
Полутоновые фотошаблоны на основе LDW-стекол
Корольков В.П., Малышев А.И., Никитин В.Г. и др.
Автометрия, Vol: 1998, No: 6 , published: 01 January 1998
Лазерно-интерферометрические системы в промышленных измерениях
Ведерников В.М., Кирьянов В.П.
Автометрия, Vol: 1998, No: 6 , published: 01 January 1998
Интерференционная профилометрия канавок с крутыми склонами в металле
Гурари М.Л., Ямников Л.С.
Измерит. техн., Vol: 1998, No: 5 , published: 01 January 1998
Исследование оптического профиля покрытий на основе In[2]O[3]-SnO[2] методом эллипсометрии
Толмачев В.А., Онохов А.П., Васильев П.Я.
Оптический журнал, Vol: 1998, No: 2 , published: 01 January 1998
Спектрометр комбинационного рассеяния света для диагностики материалов in situ в газоразрядной плазме
Павловский И.Ю., Образцов А.Н.
Приборы и техн. эксперим., Vol: 1998, No: 2 , published: 01 January 1998
Исследование структурных превращений в керамических материалах и волокнах системы ZrO[2](Y[2]O[3])-Al[2]O[3] при термическом воздействии методами комбинационного рассеяния света и люминесценции
Анциферов В.Н., Халтурин В.Г.
Физ. и химия обраб. матер., Vol: 1998, No: 5 , published: 01 January 1998
Solarization of glass substrates during thin-film deposition
Escoubas L., Gatto A., Albrand G., Roche P., Commandre M.
Appl. Opt., Vol: 37, No: 10 , 1998
Empirical equations for the principal refractive induces and column angle of obliquely deposited films of tantalum oxide, titanium oxide, and zirconium oxide
Hodglinson I., Wu Q., Hazel J.
Appl. Opt., Vol: 37, No: 13 , 1998
Development of a system for studying the morphology and dynamics of agglomerated flame particulates by use of dynamic light scattering
Wguespack Glenn, Charalampopoulos Tryfon T.
Appl. Opt., Vol: 37, No: 21 , 1998
Spectroellipsometric method for process monitoring semiconductor thin films and interfaces
Kildemo Morten, Brenot Romain, Drevillon Bernard
Appl. Opt., Vol: 37, No: 22 , 1998
Infrared properties of chemical-vapor deposition polycrystalline diamond windows
Dore Paolo, Nucara Alessandro, Cannavo Daniele et al.
Appl. Opt., Vol: 37, No: 24 , 1998
Testing aspheric surfaces: simple method with a circular stop
Handojo Andrianto, Frankena Hans J.
Appl. Opt., Vol: 37, No: 25 , 1998
Fiber electronic speckle pattern interferometry and its applications in residual stress measurements
Zhang Jingbo, Chong Tow Chong
Appl. Opt., Vol: 37, No: 28 , 1998
Design of a phase/Doppler light-scattering system for measurement of small-diameter glass fibers during fiberglass manufacturing
Schaub Scott A., Naqwi Amir A., Harding Foster L.
Appl. Opt., Vol: 37, No: 3 , 1998
Soil textural classification by a photosedimentation method
Buah-Bassuah Paul K., Euzzor Stefano, Francini Franco, Quansah Gabriel W., Sansoni Paola
Appl. Opt., Vol: 37, No: 3 , 1998
Ammonia detection and monitoring with photofragmentation fluorescence
Buckley Steven G., Damm Christopher J., Vitovec Wolfgang M. et al.
Appl. Opt., Vol: 37, No: 3 , 1998
Optical sensor to monitor and control temperature and build height of the lawer direct-casting process
Fox Mahlen D.T., Hand Duncan P., Su Daoning et al.
Appl. Opt., Vol: 37, No: 3 , 1998
Characterization of initial disturbances in a liquid jet by rainbow sizing
Han Xiange, Ren Kuan Fang, Wu Zhensen et al.
Appl. Opt., Vol: 37, No: 3 , 1998
Positioning of noncooperative objects by use of joint transform correlation combined with fringe projection
Haist Tobias, Schonleber Martin, Tiziani Hans J.
Appl. Opt., Vol: 37, No: 32 , 1998
Development of a generalized theoretical model for the response of a phase/Doppler measurement system to arbitrarily oriented fibers illuminated by Gaussian beams
Schaub Scott A., Lock James A., Naqwi Amir A.
Appl. Opt., Vol: 37, No: 33 , 1998
On-column refraxtive-index detection based on retroreflected beam interference for capillary electrophoresis
Deng Y., Li B.
Appl. Opt., Vol: 37, No: 6 , 1998
Knocking detection of a gasoline engine by utilizing an optical fiber with specific refractive-index composition
Komachiya M., Sonobe H., Fumino T., Sakaguchi T., Kawakami K., Watanabe S., Sasayama T.
Appl. Opt., Vol: 37, No: 7 , 1998
Photoredox laser chemistry of transition metal oxides
Osman J.M., Bussjager R.J., Nash F., Chaiken J., Villarica R.M.
Appl. Phys. A , Vol: 66, No: 2 , 1998
Remote monitoring of industrial emissions by combination of lidar and plume velocity measurements
Weibring P., Andersson M., Edner H., Svanberg S.
Appl. Phys. A , Vol: 66, No: 3 , 1998
Raman and NIR spectroscopic methods for determination of total dietary fiber in cereal foods: A comparative study
Archibald D.D., Kays S.E., Himmelsbach D.S., Barton F.E. (II)
Appl. Spectrosc. , Vol: 52, No: 1 , 1998
Raman and NIR spectroscopic methods for determination of total dietary fiber in cereal foods: Utilizing model differences
Archibald D.D., Kays S.E., Himmelsbach D.S., Barton F.E. (II)
Appl. Spectrosc. , Vol: 52, No: 1 , 1998
On-line monitoring of chlorosilane streams by Raman spectroscopy
Lipp E.D., Grosse R.L.
Appl. Spectrosc. , Vol: 52, No: 1 , 1998
Raman analysis of chemical reactions resulting from the collision of micrometer-sized particles
Aardahl Ch.L., Widmann J.F., Davis E.J.
Appl. Spectrosc. , Vol: 52, No: 1 , 1998
In situ measurement of fuel in the cylinder wall oil film of a combustion engine by LIF spectroscopy
Parks J.E. (II), Armfield J.S., Barber T.E., Storey J.M.E., Wachter E.A.
Appl. Spectrosc. , Vol: 52, No: 1 , 1998
Characterization of a fiber-optic system for the distributed measurement of leakages in tanks and pipelines
Sensfelder E., Burck J., Ache H.-J.
Appl. Spectrosc. , Vol: 52, No: 10 , 1998
Field test of a novel microlaser-based probe for in situ fluorescence sensing of soil contamination
Bloch Jonathan, Johnson Bernadette, Newbury Nathan et al.
Appl. Spectrosc. , Vol: 52, No: 10 , 1998
Emission spectroscopy: an excellent tool for the infrared characterization of textile fibers
Friedrich M., Zahn D.R.T.
Appl. Spectrosc. , Vol: 52, No: 12 , 1998
Quantitative photothermal radiometric and FT-IR photoacoustic measurements of specialty papers
Garcia Jose A., Mandelis Andreas, Marinova Margarita et al.
Appl. Spectrosc. , Vol: 52, No: 9 , 1998
Electrochemistry of steel electrodes: a combined study by linear reflectivity measurements and second harmonic generation
Kohring R., Buck M., Eisert F., Grunze M., Vogelsang J.
Ber. Bunsen- Ges. phys. Chem, Vol: 102, No: 10 , 1998
Kinetics of the gas-phase reqction of NO[3] radicals with 1-butene, trans-butene, 2-methyl-2-butene and 2,3-dimethyl-2-butene using LIF detection
Berndt T., Kind I., Karbach H.-J.
Ber. Bunsen- Ges. phys. Chem, Vol: 102, No: 10 , 1998
Raman spectroscopic monitoring of the polymerization of cyanacrylate
Urlaub E., Popp J., Roman V.E., Kiefer W., Lankers M., Rssling G.
Chem. Phys. Lett., Vol: 298, No: 1-3 , 1998
Photoluminescence and Raman scattering spectroscopies of MBE-grown Hg[0.68]Cd[0.32]Te epilayer
Ji R.-B., Wang S.-L., Yang J.-R. et al.
J. Infrared and Millimeter Waves = Hongwai Yu Haomibo Xuebao, Vol: 17, No: 2 , 1998
Laser beam induced current imaging of reactive ion etching induced n-type doping in HgCdTe
Musca C.A., Siliquini J.F., Smith E.P.G., Dell J.M., Faraone L.
J. Electron. Mater., Vol: 27, No: 6 , 1998
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
Sengupta D.K., Weisman M.B., Feng M. et al.
J. Electron. Mater., Vol: 27, No: 7 , 1998
Pressure-induced amorphization of germanium diselenide
Popovic Z.V., Raptis Y.S., Anastassakis E., Jaksic Z.
J. Non-Cryst. Solids , Vol: 227-2, No: , 1998
Control of crystallinity of microcrystalline silicon film grown on isnulating glass substrates
Zhou J.-H., Ikuta K., Yasuda T. et al.
J. Non-Cryst. Solids , Vol: 227-2, No: , 1998
High deposition rates for microcrystalline silicon with low temperature plasma enhanced chemical vapor deposition processes
Hapke P., Finger F.
J. Non-Cryst. Solids , Vol: 227-2, No: , 1998
Raman study of nanosized titania prepared by sol-gel route
Bersani D., Antonili G., Lottici P.P., Lopez T.
J. Non-Cryst. Solids , Vol: 232-2, No: , 1998
Testing of rod objects by grazing incidence interferometry: theory
Dresel Thomas, Brinkmann Sven, Schreiner Roland, Schwider Johannes
J. Opt. Soc. Am. A, Vol: 15, No: 11 , 1998
In Situ optical monitoring of hydrogen Chemisorption on the GaAs(111)B Ga surface
Taki T., Koukitu A.
J. Phys. A, Vol: 31, No: 17 , 1998
In Situ optical monitoring of hydrogen Chemisorption on the GaAs(111)B Ga surface
Taki T., Koukitu A.
J. Phys. A, Vol: 31, No: 17 , 1998
Electro-optical effects in thin single-crystalline organic films grown from the melt
Leyderman A., Cui Yunlong, Penn B.G.
J. Phys. D: Appl. Phys., Vol: 31, No: 20 , 1998
Second harmonic generation as a nondestructive readout of optical (photo(electro)chromic and magnetic) memories
Aktsipetrov O.A., Fedyanin A.A., Melnikov A.V. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 1 , 1998
Raman scattering studies of CuInS[2] films grown by RF ion plating (Short Note)
Kondo Ken-ichi, Nakamura Susumu, Sato Katsuaki
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10 , 1998
Location control of large grain following excimer-laser melting of Si thin-films
Ishihara R., Burtsev A.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
GaN-rich side of GaNAs grown by gas source molecular beam epitaxy
Iwata K., Asahi H., Asami K., Kuroiwa R., Gonda Sh.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates
Wu J., Yaguchi H., Onabe K., Shiraki Y., Ito R.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Metalorganic vapor-phase epitaxial growth and characterization of cubic Al[x]Ga[1-x]N alloy
Nakadaira A., Tanaka H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
The effect of different group V precursors on the evolution of quantum dots monitored by optical in situ measurements
Steimetz E., Richter W., Schienle F., Fischer D., Klein M., Zettler J.-Th.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B
Guo Sh., Ohno H., Shen A., Ohno Y., Matsukura F.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Controlled formation of narrow and uniform InP-based In[0.53]Ga[0.47]As ridge quantum wire arrays by selective molecular beam epitaxy
Fujikura H., Hanada Y., Kihara M., Hasegawa H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 3В , 1998
Correlation between structure and optoelectronic properties of undoped microcrystalline silicon
Siebke F., Yata Sh., Hishikawa Y., Tanaka M.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Fabrication and characterization of diffraction gratings using photosensitive Al[2]O[3] gel films
Zhao G., Tohge N., Nishii J.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Real time measurements of phase change dynamics
Trappe C., Bechevet B., Facsko S., Kurz H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4B , 1998
Resolution issues on confocal magnetooptic scanning laser microscopy
Nutter P.W., Wright C.D.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4B , 1998
Highly selective SiO[2] etching using inductively coupled plasma source with a multispiral coil
Yamanaka M., Hayashi Sh., Kubota M., Nakagawa H.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4B , 1998
Real-time monitoring and control of plasma etching
Safaty M., Baum Ch., Happer M., Hershkowitz N., Shohet J.L.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4B , 1998
Characteristics of self-assembled InSb dots grown on (100) AlGaSb by molecular beam epitaxy
Yano M., Seki Y., Ohkawa H. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Hydrogen chloride gas monitoring at 1.74 μm with InGaAs/InGaAsP strained quantum well laser
Ubukata A., Dong J., Masusaki H. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Optical and structural quality of GaAs epilayers from gallium, bismuth mixed solvents by liquid phase epitaxy
Saravanan Sh., Jeganathan K., Arokiaraj J. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Size control of CdS quantum-confined ultrafine particles by photocatalytic polymer coating
Hayashi T., Mizuma H., Yao H. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 5A , 1998
Preparation of CuInSe[2] thin films on Mo-coated glass substrates by pulse-plated electrodeposition
Nomura Sh., Nishiyama K., Tanaka K. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6A , 1998
Changes in Raman spectra with deposition conditions and plasma treatment of diamond like carbon thin films
Endo K., Miyamura T., Kitaori N. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6A , 1998
Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy (short note)
Chen Wei-Kuo, Lin Heng-Ching, Pan Yung-Chung, Ou Jehn, Shu Chen-Ke, Chen Wen-Hsiung, Lee Ming-Chih
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 9A , 1998
Thermal stability of low-temperature GaN and AlN buffer layers during metalorganic vapor phase epitaxy monitored by in situ shallow-angle reflectance using ultraviolet light
Kobayashi Yasuyuki, Akasaka Tetsuya, Kobayashi Naoki
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10B , 1998
Crystal growth and optical property of GaN on silica glass by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE)
Murata Naoya, Tochishita Hikari, Shimizu Yuui et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10B , 1998
Study on initial growth of particles in low-pressure and low-power GeH[4] RF discharges using the high-sensitivity photon-counting laser-light-scattering method
Kawasaki Hirosharu, Sakamoto Kazutaka, Maeda Shinichi et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 10B , 1998
Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition
Hayashi Yasuhiko, Agata Yasunori, Soga Tetsuo et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11B , 1998
Raman scattering of InAs[1-x-y]Sb[x]P[y] quaternary alloys
Chen Lung-Chien, Tyan Shing-Long, Wu Meng-Chyi
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 11B , 1998
Effects of substrate misorientation on the formation and characteristics of self-assembled InP/InGaP quantum dots
Kwon Y.-H., Cho Y.-H., Choe B.-D. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4A , 1998
Spiral growth of InGaN nanoscale islands on GaN
Keller S., Mishra U.K., Denbaars S.P. et al.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 4B , 1998
Measurement of residual stress in diamond films obtained using chemical vapor deposition
Kim J.G., Yu J.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 7B , 1998
A study of local processing on solid surfaces with atomic force microscope
Wu H.-M., Komiyama M.
Jpn. J. Appl. Phys., Part 1, Vol: 37, No: 6Bl , 1998
Photoluminescence and X-ray diffraction analysis of In[1-x-y]Ga[x]Al[y]As/InP structures grown by molecular beam epitaxy
Yoon S.F., Zhang P.H., Zheng H.Q.
Microelectron. J., Vol: 29, No: 8 , 1998
Two-dimensional mapping of electric-field vector by electro-optic prober
Kuo W.K., Huang S.L., Horng T.S., Chang L.C.
Opt. Commun. , Vol: 149, No: 1-3 , 1998
Holographic characterization of epoxy resins at 351.1 nm
Farsari Maria, Huang Shiping, Young Rupert C.D., Heywood Malcolm I., Morrell Patrick J.B., Chatwin Christopher R.
Opt. Eng., Vol: 37, No: 10 , 1998
Optical heterodyne interferometry technique for solution crystal growth rate measurement
Kim Yong Kee, Reddy B.R., George T.G., Lal R.B.
Opt. Eng., Vol: 37, No: 2 , 1998
Special section quest editorial
Chen F., Griffen Ch.T.
Opt. Eng., Vol: 37, No: 5 , 1998
Technique for rapid inspection of hermetic seals of microelectronic packages using shearography
Hung Y.Y., Shi D.
Opt. Eng., Vol: 37, No: 5 , 1998
Interferometric measurement of surface roughness in engine cylinder walls
Aziz D.J.
Opt. Eng., Vol: 37, No: 5 , 1998
Scatterometry of honed surfaces
Baumgart J.W., Truckembrodt H.
Opt. Eng., Vol: 37, No: 5 , 1998
Retroreflective grating analysis versus physical measurements of surface contour
Zhang X., North W.P.
Opt. Eng., Vol: 37, No: 5 , 1998
Joint transform correlator for the detection of defects in optical fibers
Liu W., Kim H., Lee S., et al.
Opt. Eng., Vol: 37, No: 5 , 1998
Noncontact laser sensor for pipe inner wall inspection
Zhuang B.H., Zhang W., Cui D.-Y.
Opt. Eng., Vol: 37, No: 5 , 1998
Bacteriorhodopsin-based single and dual wavelength holographic interferometry for monitoring crystal growth
Fitzpatrick Colleen, Yang Ching Mei, Fourguette Dominique
Opt. Eng., Vol: 37, No: 6 , 1998
Interferometric straightness measurement system using triangular prisms
Zhang Jihua, Cai Lilong
Opt. Eng., Vol: 37, No: 6 , 1998
Bidimensional planar micro-optics for optochemical absorbance sensing
Garces I., Villuendas F., Subias J., Alonso J., del Valle M., Dominguez C., Bartolome E.
Opt. Lett., Vol: 23, No: 3 , 1998
Bidimensional planar micro-optics for optochemical absorbance sensing
Garces I., Villuendas F., Subias J., Alonso J., del Valle M., Dominguez C., Bartolome E.
Opt. Lett., Vol: 23, No: 3 , 1998
Thin film chemical sensors with waveguide Zeeman interferometry
Ayras P., Honkanen S., Grace K.M., et al.
Pure and Appl. Opt. A, Vol: 7, No: 6 , 1998
Photomodulated thermoreflectance detection of hydrogen gas using optically thin palladium film on silicon oxide
Kalli K., Othonos A., Christofides C., Spetz A., Lundstrom I.
Rev. Sci. Instrum. , Vol: 69, No: 3 , 1998
Self-aligning optical particle sizer for the monitoring of particle growth processes in industrial plants
Bassini A., Musazzi S., Paganini E., Perini U., Ferri F.
Rev. Sci. Instrum. , Vol: 69, No: 6 , 1998
Comparison of optical and HRTEM studies of interdiffusion in CdTe/CdMnTe quantum wells
Wypior G., Kaiser S., Kossacki P., Nguyen The Khoi, Gaj J.A., Gebhardt W., Karczewski G., Wojtowicz T., Kossut J.
Semicond. Sci. Technol., Vol: 13, No: 1 , 1998
The use of in situ laser interferometry for MOCVD process control
Staffrod A., Irvine S.J.C, Hess K.L, Bajaj J.
Semicond. Sci. Technol., Vol: 13, No: 12 , 1998
Variation of the effective extinction coefficietn during pyrolytic and photo-assisted II-VI MOVPE growth, measured by in sity laser interferometry
Stafford A., Irvine S.J.C, Ahmed M.U.
Semicond. Sci. Technol., Vol: 13, No: 12 , 1998
Influence of substrate temperature on the processing of CdTe and CdS thin films
Arafah D.-E., Ahmad-Bitar R.
Semicond. Sci. Technol., Vol: 13, No: 3 , 1998
In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures
Gatzke C., Webb S.J., Fobelets K., Stradling R.A.
Semicond. Sci. Technol., Vol: 13, No: 4 , 1998
Cathodoluminescence microscopy and photoluminescence of defects in ZnTe
Fernandez P., Garcia J.A., Remon A. et al.
Semicond. Sci. Technol., Vol: 13, No: 4 , 1998
Sulphide passivation of GaAs: The role of the sulphur chemical activity
Bessolov V.N., Lebedev M.V., Binh N.M. et al.
Semicond. Sci. Technol., Vol: 13, No: 6 , 1998
Micro-Raman spectroscopic study of two-dimensional stress distribution on poly-Si induced by CoSi[2] patterns
Li B.-B., Huang F., Zhang S.-L. et al.
Semicond. Sci. Technol., Vol: 13, No: 6 , 1998
Оптический контроль процесса фотополимеризации при стереолитографическом синтезе
Менсов С.Н., Семенов А.В.
Ж. техн. физ., Vol: 68, No: 2 , 1998
Лазерный масс-спектрометрический анализ изотопно обогащенных твердых веществ
Ковалев И.Д., Потапов А.М.
Завод. лаб, Vol: 64, No: 8 , 1998
Лазерно-эллипсометрический контроль процессов электрохимической технологии
Котенев В.А., Перепелкин М.В., Кондрашов Ю.В.
Завод. лаб, Vol: 64, No: 9 , 1998
Измерение коэффициентов ортажения излучения DF-лазера от топографических отражателей
Великанов С.Д., Елутин А.С., Пегоев И.Н., Синьков С.Н., Фролов Ю.Н.
Квант. электрон., Vol: 25, No: 2 , 1998
Спектрохимические аспекты дистанционного лазерного контроля аварийных выбросов на объектах ядерного топливного цикла
Набиев Ш.Ш., Пономарев Ю.Н.
Оптика атмосферы и океана, Vol: 11, No: 12 , 1998
Самоорганизованные наноразмерные кластеры InP и InAsP, полученные методом МОС-гидридной эпитаксии
Винокуров Д.А., Капитонов В.А., Коваленков О.В., Лившиц Д.А., Тарасов И.С.
Письма в ЖТФ, Vol: 16, No: 16 , 1998
Мониторинг (осаждаемой) интерференционной пленки методом дифференциального отражения света
Адамсон П.В.
Письма в ЖТФ, Vol: 24, No: 20 , 1998
Влияние способа легирования кристаллов n-ZnSe медью на структуру центров длинноволновой люминесценции
Иванова Г.Н., Касиян В.А., Недеогло Д.Д., Опря С.В.
Физ. и техн. полупроводников , Vol: 32, No: 2 , 1998
Фотолюминесценция рекристаллизованного наносекундным лазерным облучением теллурида кадмия
Бабенцов В.Н., Тарбаев Н.И.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Формирование квантовых точек InAs в матрице GaAs при росте на разориентированных подложках
Цацульников А.Ф., Воловик Б.В., Леденцов Н.Н., Максимов М.В., Егоров А.Е., Жуков А.Е., Ковш А.Р., Устинов В.М., Чжень Ч., Петров В.Н., Цырлин Г.Э., Бимберг Д., Копьев П.С., Алферов Ж.И.
Физ. и техн. полупроводников , Vol: 32, No: 3 , 1998
Plasma-enhanced chemical vapour deposition and structural characterisation of amorphous chalogenide films
Nagels P.
Физ. и техн. полупроводников , Vol: 32, No: 8 , 1998
Synthesis and physicochemical characterization of silicon oxynitride thin films prepared by rf magnetron sputtering
Pinard L., Mackowski J.M.
Appl. Opt., Vol: 36, No: 22 , 1997
Characdterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics
Doshi Parag, Jellison Gerald E., Jr, Rohatgi Ajeet
Appl. Opt., Vol: 36, No: 30 , 1997
Noise properties and epitaxial quality in low-noise integrated YBa[2]Cu[3]O[7] magnetometers
Scharnweber R., Dieckmann N., Schilling M.
Appl. Phys. Lett. , Vol: 70, No: 16 , 1997
Control of diamond heteroepitaxy on nickel by optical reflectance
Yang P.C., Schlesser R., Wolden C.A., Liu W., Davis R.f., Sitar Z., Prater J.T.
Appl. Phys. Lett. , Vol: 70, No: 22 , 1997
Calculating inaccessible Raman reference spectra for use in monitoring a suspension polymerization
Vickers T.J., Lombardi D.R., Sun B., Wang H., Mann C.K.
Appl. Spectrosc. , Vol: 51, No: 8 , 1997
Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer
Takahashi N., Matsuki Sh., Koukitu A., Seki H.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 9A-9B , 1997
Measurement of the delamination of thin silicon and silicon carbide layers by the multi-wavelength laser ellipsometer
Hara T., Kakizaki Y., Tanaka H., Inoue M., Kajiyama K., Yoneda T., Masao K.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 9A-9B , 1997
A new technique of compound semiconductor deposition from an aqueous solution by photochemical reactions
Goto F., Ichimura M., Arai E.
Jpn. J. Appl. Phys., Part 1, Vol: 36, No: 9A-9B , 1997
KrF resist pattern monitoring by ellipsometry
Hoshi K., Kawamura E., Arimoto H.
Radio Sci, Vol: 32, No: 6 , 1997
Noninvasive measurement of charging in plasmas using microelectromechanical charge sensing devices
Pangal K., Firebaugh L., Sturm J.C.
Appl. Phys. Lett. , Vol: 69, No: 10 , 1996
Machine vision in semiconductor wafer inspection
Simpson R.
Laser and Optron, Vol: 15, No: 7 , 1996
Lasers probe diamond-film formation

Photonic spectra, Vol: 30, No: 1 , 1996
Laser testing increases life expectancy of tires
Harris M.
Photonic spectra, Vol: 30, No: 8 , 1996
Разработка лазерных систем контроля и диагностики характерик СВЧ транзисторов, сверхбыстродействующих интегральных схем, температуры в технологиях прецизионного машиностроения, параметров электронных, плазменных и газовых потоков
Акчурин Г.Г., Огнищев А.Ю., Свинолупов К.И., Стольниц М.М., Соловьев А.П., Тучин В.В.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1995, No: 10 , published: 01 January 1995
Лазерный контроль эффективности технологического процесса ультразвуковой очистки конструкционных материалов
Михайлов А.А.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1995, No: 10 , published: 01 January 1995
Разработка методик и аппаратуры лазерного контроля процессов УФ(ИЛ) фоточистки газовых и жидких сред в технологиях микроэлектроники и в экологии
Берцев В.В., Бурейко С.Ф., Бурцев А.И., Зеликина Г.Я., Рутковский К.С., Тохадзе К.Г., Цибуля В.И.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1995, No: 10 , published: 01 January 1995
Лазерная система для диагностики испарения, осаждения и отжига в технологии синтеза полупроводниковых материалов микроэлектроники
Комолов С.А., Лазнева Э.Ф., Синиченко В.В., Герасимова Н.Б.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1995, No: 10 , published: 01 January 1995
Разработка системы лазерной оптико-акустической диагностики и контроля технологических процессов в газовых средах
Юдин В.И.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1995, No: 10 , published: 01 January 1995
О возможности ультразвуковой и оптической диагностики золь-гель процессов получения стекол для систем
Богданов В.Н., Ефимов А.В., Пахнин А.Я., Соловьев В.А., Чернышева Е.О., Шашкин В.С.
Phys. Rev. A: At. Mol. Opt. Phys., Vol: 1995, No: 12 , published: 01 January 1995
Dry etch processes and sensors
Barna G.G., Loewnstein L.M., Henck S.A., Chapados Ph., Brankner K.J., Gale R.J., Mozumder P.K., Butler S.W., Stefani J.A.
Solid State Technol, Vol: 37, No: 1 , 1994
Reaction of the hydrated electron with water
Schwarz Harold A.
J. Phys. Chem, Vol: 96, No: 22 , 1992
Fiber confocal scanning microscopy for the measurement of optical disk pregrooves
Yang Lisong et al.
Acta opt. sin=Guangxue xuebao , Vol: 20, No: 3
Fabrication and characterization of fiber-optic nano-probes with high transmission efficiency and high resolution
Liu Xiumei, et al.
Acta opt. sin=Guangxue xuebao , Vol: 20, No: 5
Photoluminescence study of resonant tunneling transistor with p{+}/n-junction gate
Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 1
Conversion of diamond-like carbon film from phenylcarbyne polymer under pulsed green laser irradiation
Huang Su Mei, Lu Yong Feng, Sun Zhuo
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 3A
Visible photoluminescence from Si{+}-implanted SiO[2] films after high-temperature rapid thermal annealing
Tsai Jen-Hwan, Yu Ann-Ting, Sheu Bor-Chiou
Jpn. J. Appl. Phys., Part 1, Vol: 39, No: 2A
Анализ рассеивающих свойств оксидных частиц на слоистой подложке
Гришина Н.В., Еремин Ю.А., Свешников А.Г.
Вестн. МГУ. Сер. 3, Vol: 3, No: 2
Градиентная оптика: оптические методы тестирования
Герасимова Л.А.
Оптический журнал, Vol: , No: 4
Selectived contactless optoelectronic measurements for electronic applications (invited)
Cutolo Antonello
Rev. Sci. Instrum. , Vol: 2, No: Pt 1
A simple chemical etching technique for reproducible fabrication of robust scanning near-field fiber probes
Chuang Yung-Hui, Sun Kuo-Gung, Wang Chia-Jen, Huang J.Y., Pan Ci-Ling
Rev. Sci. Instrum. , Vol: 2, No: Pt 1